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Low Power VLSI
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Jan 7, 2010 Agrawal: Low Power CMOS Design 1
Vishwani D. AgrawalJames J. Danaher Professor
ECE Dept., Auburn University, Auburn, AL 36849www.eng.auburn.edu/~vagrawal
23rd International Conference on VLSI DesignEducation Forum, January 7, 2010
Bangalore, India
Jan 7, 2010 Agrawal: Low Power CMOS Design 2
F. M. Wanlass and C. T. Sah, “Nanowatt Logic using Field-Effect Metal-Oxide-Semiconductor Triodes,” IEEE International Solid-State Circuits Conference Digest, vol. IV, February 1963, pp. 32-33.
No static leakage path exists for either 1 or 0 input.
Jan 7, 2010 Agrawal: Low Power CMOS Design 3
VDD
Ground
CL
R
R
Dynamic Power= CLVDD
2/2 + Psc
Static power= VDD Ileakage
Vi
Vo
isc
Jan 7, 2010 Agrawal: Low Power CMOS Design 4
Why is it a concern?
Jan 7, 2010 Agrawal: Low Power CMOS Design 5
“Ten years from now, microprocessors will run at 10GHz to 30GHz and be capable of processing 1 trillion operations per second – about the same number of calculations that the world's fastest supercomputer can perform now.
“Unfortunately, if nothing changes these chips will produce as much heat, for their proportional size, as a nuclear reactor. . . .”
Patrick P. Gelsinger Senior Vice PresidentGeneral ManagerDigital Enterprise Group INTEL CORP.
Jan 7, 2010 Agrawal: Low Power CMOS Design 6
400480088080
8085
8086
286 386486
Pentium®P6
1
10
100
1000
10000
1970 1980 1990 2000 2010Year
Pow
er D
ensi
ty (W
/cm
2 )
Hot Plate
NuclearReactor
RocketNozzle
Sun’sSurface
Source: Intel
Design practices that reduce power consumption by at least one order of magnitude; in practice 50% reduction is often acceptable.
Low-power design methods: Algorithms and architectures High-level and software techniques Gate and circuit-level methods Test power
Jan 7, 2010 Agrawal: Low Power CMOS Design 7
Dynamic Power Signal transitions
Logic activity Glitches
Short-circuit Static Power
Leakage
Jan 7, 2010 Agrawal: Low Power CMOS Design 8
Ptotal = Pdyn + Pstat
= Ptran + Psc + Pstat Then
= Ptran + Psc + Pstat Now
Each transition of a gate consumes CV 2/2. Methods of power saving:
Minimize load capacitances Transistor sizing
Reduce transitions Logic design Glitch reduction
Jan 7, 2010 Agrawal: Low Power CMOS Design 9
Design a digital circuit for minimum transient energy consumption by eliminating hazards
Jan 7, 2010 Agrawal: Low Power CMOS Design 10
Total transitions = 6Essential transitions = 2
Glitch transitions = 4
Jan 7, 2010 Agrawal: Low Power CMOS Design 11
Delay D < DPD
A
BC
AB
C D D Hazard or glitch
DPD
DPD: Differential path delay
time
Jan 7, 2010 Agrawal: Low Power CMOS Design 12
DelayD < DPD
A
BC
AB
C D No glitch
DPD
Delay buffer
time
Jan 7, 2010 Agrawal: Low Power CMOS Design 13
Delay D > DPD
A
BC
AB
C
D > DPD
Filtered glitch
DPD
time
Maintain specified critical path delay. Glitch suppressed at all gates by
Path delay balancing Glitch filtering by increasing inertial delay of gates or by
inserting delay buffers when necessary. A linear program optimally combines all objectives.
Jan 7, 2010 Agrawal: Low Power CMOS Design 14
DelayD
Path delay = d1
Path delay = d2
Minimum transient energy condition: |d1 – d2| < D
Variables: gate and buffer delays, arrival time variables.
Objective: minimize number of delay buffers. Subject to: overall circuit delay constraint for all
input-output paths. Subject to: minimum transient energy condition for
all multi-input gates. Reference:
T. Raja, V. D. Agrawal and M. L. Bushnell, “Variable Input Delay CMOS Logic for Low Power Design,” IEEE Trans. CAD, vol. 17, no. 10, pp. 1534-1545, Oct. 2009.
Jan 7, 2010 Agrawal: Low Power CMOS Design 15
Jan 7, 2010 Agrawal: Low Power CMOS Design 16
11
11
Critical path delay = 6
11
11
111111
11
11
Jan 7, 2010 Agrawal: Low Power CMOS Design 17
Gate delay variables: d4 . . . d12 Buffer delay variables: d15 . . . d29 Arrival time variables (earliest): t4 . . . T29
(longest): T4 . . . . T29
For Gate 7:T7 ≥ T5 + d7 t7 ≤ t5 + d7 d7 > T7 - t7
T7 ≥ T6 + d7 t7 ≤ t6 + d7
Jan 7, 2010 Agrawal: Low Power CMOS Design 18
Jan 7, 2010 Agrawal: Low Power CMOS Design 19
T16 + d19 = T19
t16 + d19 = t19
Buffer 19:
T11 ≤ maxdelayT12 ≤ maxdelay
maxdelay is specified
Jan 7, 2010 Agrawal: Low Power CMOS Design 20
Need to minimize the number of buffers. Because that leads to a nonlinear objective
function, we use an approximate criterion:minimize ∑ (all buffer delays)
i.e., minimize d15 + d16 + ∙ ∙ ∙ + d29
This gives near optimum results.
Jan 7, 2010 Agrawal: Low Power CMOS Design 21
Jan 7, 2010 Agrawal: Low Power CMOS Design 22
11
22
Critical path delay = 6
22
11
111111
22
11
22
11
Jan 7, 2010 Agrawal: Low Power CMOS Design 23
11
11
Critical path delay = 7
33
22
111111
22
11
22
Jan 7, 2010 Agrawal: Low Power CMOS Design 24
11
44
Critical path delay = 11
55
33
331111
22
11
Jan 7, 2010 Agrawal: Low Power CMOS Design 25
Power Saving: Average 58%, Peak 68%
Jan 7, 2010 Agrawal: Low Power CMOS Design 26
Dynamic Power Signal transitions
Logic activity Glitches
Short-circuit Static Power
Leakage
Jan 7, 2010 Agrawal: Low Power CMOS Design 27
Jan 7, 2010 Agrawal: Low Power CMOS Design 28
65nm CMOS technology:Low threshold transistors, gate delay 5ps, leakage current 10nA.High threshold transistors, gate delay 12ps, leakage 1nA.
Minimize leakage current without increasing critical path delay. What is the percentage reduction in leakage power?
What will be leakage power reduction if 30% critical path delay increase is allowed?
Jan 7, 2010 Agrawal: Low Power CMOS Design 29
Reduction in leakage power = 1 – (4×1+7×10)/(11×10) = 32.73%Critical path delay = 25ps
5ps
5ps
5ps
5ps
5ps
5ps5ps
12ps
12ps
12ps
12ps
Jan 7, 2010 Agrawal: Low Power CMOS Design 30
Several solutions are possible. Notice that any 3-gate path can have 2 high threshold gates. Four and five gate paths can have only one high threshold gate. One solution is shown in the figure below where six high threshold gates are shown with shading and the critical path is shown by a dashed red line arrow.
Reduction in leakage power = 1 – (6×1+5×10)/(11×10) = 49.09%Critical path delay = 29ps
12ps
12ps
12ps
12ps12ps
12ps5ps
5ps5ps
5ps
5ps
Assign every gate i an integer [0,1] variable Xi. Define ILP constraints for critical path delay. Define objective function to minimize total
leakage. Let ILP find values of Xi’s:
If Xi = 1, assign low threshold to gate i If Xi = 0, assign high threshold to gate i
Jan 7, 2010 Agrawal: Low Power CMOS Design 31
1 1.1 1.2 1.3 1.4 1.5
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Normalized Critical Path Delay
Nor
mal
ized
Lea
kage
Pow
er C432
C880
C1908
Jan 7, 2010 Agrawal: Low Power CMOS Design 32
0100200300400500600700800900
Micr
owat
ts
Original circuit Optimizeddesign
Leakage powerDynamic powerTotal power
Jan 7, 2010 Agrawal: Low Power CMOS Design 33
Leak
age
exce
eds
dyn
amic
power Y. Lu and V. D. Agrawal, “CMOS
Leakage and Glitch Minimization for Power-Performance Tradeoff,” Journal of Low Power Electronics (JOLPE), vol. 2, no. 3, pp. 378-387, December 2006.
Jan 7, 2010 Agrawal: Low Power CMOS Design 34
M2
R4
A datapath
R1 R2
M1
R3
Jan 7, 2010 Agrawal: Low Power CMOS Design 35
LFSR1 LFSR2
M1 M2
MISR1 MISR2
Test time
Test
pow
er
T1: test for M1
T2: test for M2
Jan 7, 2010 Agrawal: Low Power CMOS Design 36
R1 LFSR2
M1 M2
MISR1 MISR2Test time
Test
pow
er
T1: test for M1T2: test for M2
Test resources: Typically registers and multiplexers that can be reconfigured as test pattern generators (e.g., LFSR) or as output response analyzers (e.g., MISR).
Test resources (R1, . . .) and tests (T1, . . .) are identified for the system to be tested.
Each test is characterized for test time, power dissipation and resources it requires.
Jan 7, 2010 Agrawal: Low Power CMOS Design 37
Jan 7, 2010 Agrawal: Low Power CMOS Design 38
T1 T2 T3 T4 T5 T6
R2R1 R3 R4 R5 R6 R7 R8 R9
Reference:R. M. Chou, K. K. Saluja and V. D. Agrawal, “Scheduling Tests for VLSI Systems Under Power Constraints,” IEEE Trans. VLSI Systems, vol. 5, no. 2, pp. 175-185, June 1997.
Jan 7, 2010 Agrawal: Low Power CMOS Design 39
T1(2, 100)
T2(1,10)
T3(1, 10)
T4(1, 5)
T5(2, 10)
T6(1, 100)
Tests that form a clique can be performed concurrently(test session)
Power Test time
Pmax = 4
CLIQUE NO. i TEST SESSION TEST LENGTH, Li POWER, Pi1 T1, T3, T5 100 52 T1, T3, T4 100 433 T1, T6T1, T6 100100 334 T1, T5 100 45 T1, T4 100 36 T1. T3 100 37 T2, T6 100 288 T2, T5T2, T5 1010 339 T3, T5 10 31010 T3, T4T3, T4 1010 2211 T1 100 212 T2 10 113 T3 10 114 T4 5 115 T5 10 216 T6 100 1
Jan 7, 2010 Agrawal: Low Power CMOS Design 40
For each clique (test session) i, define: Integer variable, xi = 1, test session selected, or xi = 0,
test session not selected. Constants, Li = test length, Pi = power.
Constraints to cover all tests: T1 is covered if x1 + x2 + x3 + x4 + x5 + x6 + x11 ≥ 1 Similar constraint for each test, Tk
Constraints for power: Pi × xi ≤ Pmax
Jan 7, 2010 Agrawal: Low Power CMOS Design 41
Objective function: Minimize Σ Li × xi
all cliques Solution:
x3 = x8 = x10 = 1, all other xi’s are 0 Test session 3 includes T1 and T6 Test session 8 includes T2 and T5 Test session 10 includes T3 and T4
Test length = L3 + L8 + L10 = 120 Peak power = max {P3, P8, P10} = 3 (Pmax = 4)
Jan 7, 2010 Agrawal: Low Power CMOS Design 42
Underlying theme in our research – use of mathematical optimization methods for power reduction at gate level:
Dynamic power Leakage power Power minimization under process variation Test power
Other research Min-max power estimation Architecture level power management
Software, instruction set Multicore
Jan 7, 2010 Agrawal: Low Power CMOS Design 43
T. Raja, MS 2002, PhD 2004 (NVIDIA) S. Uppalapati, MS 2004 (Intel) F. Hu, PhD 2006 (Intel) Y. Lu, PhD 2007 (Intel) J. D. Alexander, MS 2008 (Texas Instruments) K. Sheth, MS 2008 M. Allani, PhD J. Yao, PhD K. Kim, PhD M. Kulkarni, MS
Jan 7, 2010 Agrawal: Low Power CMOS Design 44
Dissertations: http://www.eng.auburn.edu/~vagrawal/THESIS/thesis.html
Papers: http://www.eng.auburn.edu/~vagrawal/TALKS/talks.html
Jan 7, 2010 Agrawal: Low Power CMOS Design 45