Upload
buingoc
View
229
Download
0
Embed Size (px)
Citation preview
LED TO CHANCE
Sapphire ( )
Sapphire () (Al2O3) ,, , ,
(LED)
LED
/
GaP/GaP LPE 565 700
GaAsP/GaP VPE 630 650
AlGaAs/GaAs LPE 660
ZnCdSe MBE 565
I nGaAlP/GaAs MOCVD 570 645
I nGaAlP/GaP
I nGaAlP/Sapphire
I nGaAlP/Silicon
I nGaN/Sapphire MOCVD 430 525
()I nGaN/Silicon
I nGaN/SiC
LED
LED
SiC
MES/SPC
MES/SPC
KY
CZ
MES /SPC
SPC
MES
Al2O3
:
30KY
,
30KY
1 2
60KY
,
SEMC-RC150
Ingot 2~6Ingot(): 250mm
5 KW
, V 220/110()
, Hz 50/60
MES/200MES
INVOICE
INVOICE
INVOICE
INVOICE
MES/200MES
ERP
ERP
ERP
MES
MES
MES
MES
MES
MES
MES
MES
FQC
MES
MES
ERP
ERP
PullingInspMountDrillingCutting
GrindingFlattingInsp FQC Packing
MES
Ingot NO Shipping NO
Shipping Lebel
:Al2O3
Crystal NO
R/M No
25~30kg / 1Run
200MES
200MESProject Schedule
200MES Document Management
30
MES
SPC
60~80
HEM
CZ
30,
HEM
101
182
18,3
25
5
4
105
106
107
58
KYCZ
HEM
Process
CZ V.S. KY
- I
(mm)
(kg)
MPa
cm-2
4040 3.0 100 150 >105
450500 200 1.0 105
Kyocera
Namiki
30050 11 30 105SapphireTech.
100 103 105CrystalSys./GT
- II
-Rocking Curve
-Rocking Curve
Rocking Curve
-CZ :4.4 5.8sec () -KY3.6 3.8sec-HEM:5.5 11.7sec
Rocking CurveKYRocking CurveCZ
-KY EPD: 100102-2-CZ EPD 0.91.2105 -2
EPDKYEPDCZ
Kyropulos Method (KY)
CZ Method
KY V.S. CZ
Kyropulos Method--- Cz Method---
High quality()
Poor quality
()
Low Cost ()
High cost()
Hard to study mass production()
Poor quality
()
For larger crystal growth ()
Hard to control the orientationwell()
Low Growth Speed()
High growth speed()
KY V.S. CZ
KY CZ
CZ vs KYGrowth Method CZ KY
Boule size 4, useable length 200mm
30KG
Growth Axis A A
Crucible Ir Mo/W
Hot zone ZrO2 Mo
Heating High Frequency Including Heating
Resistive Heating
Cycle time 7.2 days 10 days
Max. output per month (2) 1120mm 2100mm
Crucible Cost (CZ) 360000 15000
Crucible repair cycle time(Ir)/ Crucible Life time(W) 1.5 2.5
Crucible Repair Cost(CZ) 33000 0
Crucible Repair Cost(CZ)/ Crucible Cost (KY) 22000 6000
Machine Cost (include hot zone/ exclude Crucible ) 450000 250000
EM wave Serious Very small
Power consumption 45kw 42kw
Sapphire for 2 Substrate
LED
Turnkey solution provider
Sales
Support
Application
Support
Service
Support
After LED RD line set up:
1. 2. 3. 4. 5. SOP6.
1~6 6~12 12~
/
move-in
(trouble-shooting)
SOP
SOP
()
2 inch wafer Spec.
: 1st Yield:85%;Total Yield:95%
2 inch PSS wafer Spec.
:1st Yield:60%;Total Yield:90%
Sapphire for 2Substrate
Sapphire () in LED industry
Pattern Sapphire Substrate (PSS)Dry Etch(DPSS)Wet Etch (WPSS)
()
HMDS
ICP
PR-
Strip
PR-
Strip
+ D P S S ; ~ 5 0 K
+ W P S S , ; ~ 5 0 K
SiO2
Annea-
ling+
HMDS
BOE-
Strip
Sapphire Process Introduction
Diamondwire slicing
Double Side Lapping + B4C F240 (GC JIS240)Upper wheel balancing unit
Both plate cooling system
4 Independent Drives
Machine Features on points
Step 1 B4C Double side lapping process
Step 2
Resin Special Copper + diamond slurry process
Step 3
Special Metal Tin + diamond slurry process
Step 4-5 Rough & Fine CMP process
Template or Wax bonding
OR
Double Side Polish Process
Double Side Polish
Bow/Wrap result
-Bow/Warp result
Single Side Diamond Lapping Machine
Single Side Diamond Lapping Machine
CMP Machine
Cost Analyze for 2 sapphire wafer (100K)
Polish wafer
RD Line : 1.2
Polish wafer
100K :2
DPSS
DPSS50K :1.5~2
PSS
WPSS50K :1.2~1.5
2 inch wafer
Price and Profit by 2011 Q4
2011 Q4 Sapphire 2 inch wafer (USD)
2 inch ingot by 1 mm $8
2 inch Polished Wafer $13-15
2 inch PSS Wafer $23-25
waferUSD3
USD23
PSS wafer
USD5USD56
Note:2 inch Polish wafer :NTD200,000,000/29 =USD 6,896,5512 inch PSS wafer :NTD150,000,000/ 29=USD 5,172,414
LED sapphire wafer