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7/18/2019 Lecture - MOS & MOSFET-1.ppt
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Field EffectField Effect
Transistors (1)Transistors (1)
Dr. Wojciech Jadwisienczak EE314
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Q: How we can do this?A: A new generation of MOSFETs for plastic electronics
http://www.plasticlogic.com
http://www.plasticlogic.com/http://www.plasticlogic.com/7/18/2019 Lecture - MOS & MOSFET-1.ppt
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Chapter 12: FieldEffect ransistors
pp. !44"!##
1!onstr"ction of MOS#$MOS and %MOS&T'pes of MOSMOSFET asic Operation
*!haracteristics+S,all-Signal E."i/alent !irc"its0Ea,ples
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Figure 2 -120 nm footprint T-gate with
self-aligned source and drain contacts.
http://www.three-fives.com/latest_features/webzine_features/iainthainestory.html
Figure 4 showing the lateral etching control offered by digital recess
etching. !n both micrographs" the depth of the recess is #0 nm. The
micrograph on the left shows a wide gate recess with large lateral e$tentwhilst the micrograph on the right shows a recess tightly defined around the
gate footprint.
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"ilding A MOSFET Transistor 2sing Silicon
http:33,icro,agnetfs"ed"3electro,ag34a/a3transistor3indeht,l
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5t is done $ow6 how does itwor7?
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8FET and MOSFET Transistorsor8FET9 8"nction Field Effect TransistorMOSFET - Metal Oide Se,icond"ctor Field Effect Transistor
n-channel MOSFET p-channel MOSFET
;
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n-channel MOSFET asic Operation
Operation in the !"toff region
Sche,atic
pn 4"nction:forward@ias6 re/erse@ias
ihen /S
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n-channel MOSFET asic Operation
Operation in the Triode egion
For /iSB/S-Ct=and /SDCt= the $MOS is operating in thetriode region
esistor li7e characteristic( @etween S 62sed as /oltage controlled )
For s,all /S6 iis proportional
to the ecess /oltage/S-Ct=
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n-channel MOSFET asic Operation
Operation in the Sat"ration egion (/Sis increased)
Taperingof thechannel
iis s,allerwhen/S islarger
( )[ ]2
02 DSDStGSD vvVvKi
=2
KP
L
WK
=
e/ice para,eter % for
$MOSFET is *= A3C#( )2
0tGSD VvKi =
>hen /
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n-channel MOSFET asic Operation
!haracteristic
2DSD Kvi =
Ea,ple 1#1
!hannel length,od"lation
iddepends on /Sinsat"ration region
(appro: i
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p-channel MOSFET asic Operation
5t is constr"cted @' interchanging the nandpregions ofn-channel MOSFET
S',@ol
!haracteristic
How does operatep-channel MOSFET?-/oltage polarities-ic"rrent-sche,atic
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;oad-;ine Anal'sis of $MOS A,plifier
5t is a graphical anal'sis si,ilar to load-line anal'sis of pn diode
Sche,atic
Anal'sisG
GGinGS Vtvtv += )()(
4)200sin()( += ttvGS
)()( tvtiRV DSDDDD +=
)()(20 tvtiRDSDD
+=
5np"tloop
O"tp"tloop
;oadline
/S /S
>e loo7 for operatingpoint
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;oad-;ine Anal'sis of $MOS A,plifier
;oad line )()(20 tvtiRDSDD
+= Ta7ing i
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5np"t signal )200sin(1)( ttvin =
;oad-;ine Anal'sis of $MOS A,plifier(pea7-to-pea7 a,plit"de is #C)
1#C
5n/erseoperation
The positi/e pea7 of the inp"t occ"rs at the sa,e ti,e as the ,in
/al"e of /S These are not s',,etrical sin"soidsI (nonlinear distortion)
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ias !irc"itsAnal'sis of a,plifier circ"its is often "nderta7en in two steps:(1) The dc circ"it anal'sis to deter,ine the Q point 5t in/ol/es the
nonlinear e."ation or the load-line ,ethod This is called @iasanal'sis(#) 2se a linear s,all-signal e."i/alent circ"it to deter,ine circ"it
para,eters
The fied-pl"sself-@ias circ"it
5np"t O"tp"t
E."i/alentcirc"it
21
2
RR
RVVDDG
+
=
DSGSG iRvV +=
Anal'sisG
Ass",e the C
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ias !irc"its
%lot ofDSGSG
iRvV += ( )2
0tGSD VvKi =and
isregarded root
for /SBCt=
2se onl' largerroot for /Sands,aller for i
Ea,ple 1##