25
L-EDIT tutorial (Layout Editor) Iran University of Science and Technology By : Eng. Bahram Roshan nezhad Fall 2012

L-Edit Tutorial (IUST)

Embed Size (px)

DESCRIPTION

L - Edit Tutorial

Citation preview

Page 1: L-Edit Tutorial (IUST)

L-EDIT tutorial (Layout Editor)

Iran University of Science and Technology By : Eng. Bahram Roshan nezhad

Fall 2012

Page 2: L-Edit Tutorial (IUST)

LOGO

[email protected]

Introduction

L-Edit is an Integrated Circuit Layout

Tool used to draw the two dimensional

geometry of the masks or layers to

fabricate an integrated circuit.

Different layers are represented by

by different colors and patterns.

Manufacturing constraints can be defined

in L-Edit as design rules.

L-Edit files are saved as file_name.tdb

(Tanner Database).

1/23

Page 3: L-Edit Tutorial (IUST)

LOGO

[email protected]

L-Edit Modules

L-Edit: The layout editor.

L-Edit/DRC: The Design Rule Checker.

L-Edit /Extract: The layout extractor to

SPICE.

L-Edit /SPR: an automatic standard cell.

placement and routing package.

2/23

Page 4: L-Edit Tutorial (IUST)

LOGO

[email protected]

L-Edit Window

File and cell name Location

Toolbars

Layer Palette

Drawing

windows

Mouse

Buttons

L-Edit v8.30

Menu Bar

3/23

Page 5: L-Edit Tutorial (IUST)

LOGO

[email protected]

L-Edit Toolbars

Edit>

Duplicate

Draw>

Rotate

Draw>

Flip>

Horizontal

Draw>

Flip>

Vertical

Draw>

Nibble

Draw>

Slice>

Horizontal

Draw>

Slice>

Vertical

Draw>

Merge

Draw>

Group

Draw>

Ungroup

Edit>

Edit

Object

Draw>

Move

By

Tool>

DRC

Tool>

DRC Box

DRC

Setup

Edit>

Find

Edit>

Find

Next

Edit>

Find

Previous

View>

Goto

Tools>

Clear Error

Layers

Tool>

Extract

File>

New

File>

Open

File>

Save

File>

Print

File>

Cut

File>

Copy

File>

Paste

File>

Undo

File>

Redo

Edit>

Edit-in

Place>

Push Into

Edit>

Edit-in

Place>

Pop Out

view>

Cell

Browser

Edit>

Find

view>

Zoom>

Mouse

View>

Insides>

Toggle

insides

Cell>

Open

Cell>

Copy

Tool>

Cross

Section

Help>

L-Edit

User Guid Hierarchy level

4/23

Page 6: L-Edit Tutorial (IUST)

LOGO

[email protected]

Selection

tool

Rectangular

Box

Polygon

(90 deg.)

Wire

(90 deg.)

Polygon

(all-angle)

Polygon

(45deg.)

Wire

(35 deg.)

Wire

(all-angle)

Circle

Arc

Torus

Port

Ruler

(all angle)

Ruler

(45 deg.)

Ruler

(90 deg.)

Instance

Wire Width

L-Edit Toolbars

Selected

Layer name

Layer Palette

Layer Palette

scrollbar

Layer Palette

5/23

Page 7: L-Edit Tutorial (IUST)

LOGO

[email protected]

Things to know

Lambda Definition (𝝀(

L: The channel length of the MOSFET, i.e, half

the size of technology used.

Exp) L=180nm 1Lambda=90nm

Note: You must set the length of the square

to represent One lambda or one Locator Unit.

L = 2 ∗ 𝜆

6/23

Page 8: L-Edit Tutorial (IUST)

LOGO

[email protected]

Design Parameters Setups

Create a name for

your fabrication

process

Relationship between L-Edit

internal units.

one internal unit is1nm

(1/1000lambda)

Technology

unit

B) Technology

From: Menu> Setup> Design> Technology

7/23

Page 9: L-Edit Tutorial (IUST)

LOGO

[email protected]

Design Parameters Setups

These are just the

dots shown on the

screen.

This is where your

mouse will snap to.

To set

One locator Unit=lambda

B) Grid

From: Menu> Setup> Design> Grid

8/23

Page 10: L-Edit Tutorial (IUST)

LOGO

[email protected]

C) Layers Setup

From: Setup> Layers

Design Parameters Setups

9/23

Page 11: L-Edit Tutorial (IUST)

LOGO

[email protected]

Design Parameters Setups

C) Editing Objects

From: Edit> Edit Object (Ctrl+E)

10/23

Page 12: L-Edit Tutorial (IUST)

LOGO

[email protected]

Layout Example Draw the layout of a CMOS inverter given the following:

L= 0.5µm, Wn= 1.0µm, and Wp= 2.5µm.

V in

PmosL=0.5µ m

Wp=2.5µ m

NmosL=0.5µ m

Wp=1.0µ m

Vout

VDD

VSS

11/23

n

Page 13: L-Edit Tutorial (IUST)

LOGO

[email protected]

Create new Layout file File > New.

In the following open window, Browse and choose ‘mamin08.tdb’ in

‘‘Copy TDB setup from file’’ area. It usually locates in setup directory.

12/23

Example

Page 14: L-Edit Tutorial (IUST)

LOGO

[email protected]

Design Setup As mentioned before from: From Menu> Setup> Design >

Establishing

l=0.25mm,

therefore

2l=0.5mm.

Click OK: Now the technology is setup!

Example

13/23

Page 15: L-Edit Tutorial (IUST)

LOGO

[email protected]

Example

Pmos Choose N-Well in the left palette and draw a box

In the N-Well area, draw P-Select (for D&S) and

N-Select (for Body). Notice that the size and position

should obey Design Rule, which can be found at:

http://www.mosis.com/files/scmos/scmos.pdf.

It is a good idea to run DRC

at each stage of your design

so that you can fix any error

along the way

Draw Active.

Draw Poly (Gate).

14/23

2𝝀

10𝝀

N-Select P-Select

Active

N-Well

Poly

Page 16: L-Edit Tutorial (IUST)

LOGO

[email protected]

Example

4𝝀

Nmos Do not need to draw P-Well (Why?).

Draw N-Select and P-Select.

Draw Active.

Draw Poly.

15/23

P-Select N-Select

Page 17: L-Edit Tutorial (IUST)

LOGO

[email protected]

Example

Draw VDD and GND Lines.

VDD

GND

16/23

Page 18: L-Edit Tutorial (IUST)

LOGO

[email protected]

Example

Connect Poly of PMOS and NMOS.

Connect source of PMOS to VDD

by Metal1.

Connect source of NMOS to GND

by Metal 1.

Connect Drain of PMOS and NMOS

by Metal 1.

Add an input connect between

Metal1 and Poly.

Label the INPUT, OUTPUT, VDD

and GND.

17/23

Page 19: L-Edit Tutorial (IUST)

LOGO

[email protected]

L-Edit Design Rule Check From Tools> DRC (or the DRC box in the toolbar)

Run DRC for the total layout.

Fix the errors listed.

Once there is no DRC error

shown, the layout is ready to be

extracted.

Example

18/23

Page 20: L-Edit Tutorial (IUST)

LOGO

[email protected]

L-Edit can be used to generate SPICE-compatible circuit file listings using

the Extract option in the setup window of the menu bar menu bar.

Example

19/23

Page 21: L-Edit Tutorial (IUST)

LOGO

[email protected]

L-Edit Extractor

General

Enter the name of the

extractor definition file

Enter the name of the

SPICE output file.

• name.cir for PSPICE

• name.sp for HSPICE

Example

20/23

Page 22: L-Edit Tutorial (IUST)

LOGO

[email protected]

L-Edit Extractor

Output Select :

Comments: Write Nodes

Names.

Write Nodes as: Integers

Write Node parasitic

Capacitance.

Place device labels on

layer: Metal1.

Then Click Run

Example

21/23

Page 23: L-Edit Tutorial (IUST)

LOGO

[email protected]

L-Edit Extractor

Click: Ignore All

Example

22/23

Page 24: L-Edit Tutorial (IUST)

LOGO

[email protected]

The generated SPICE file

Example

* NODE NAME ALIASES

* 1 = VIN (-7.5,-6.5)

* 2 = VOUT (27.5,-6)

* 3 = GND (-7.5,-31)

* 4 = VDD (-6,30)

Cpar1 2 0 C=1.72875E-015

Cpar2 3 0 C=1.0445E-015

Cpar3 4 0 C=1.69675E-015

M2 2 1 4 4 PMOS L=5E-007 W=2.5E-006 AD=4.375E-012

+ PD=8.5E-006 AS=4.375E-012 PS=8.5E-006

M1 2 1 3 3 NMOS L=5E-007 W=1E-006 AD=2.5E-012

+ PD=6.5E-006 AS=2.5E-012 PS=6.5E-006

* Total Nodes: 4

* Total Elements: 5

* Extract Elapsed Time: 0 seconds

.END

The Nodes corresponding integers

The generated parasitic capacitors

The generated two MOSFETs

23/23

Page 25: L-Edit Tutorial (IUST)