KSC5305D

KSC

5305D

NPN

Silicon Transistor

2010 Fairchild Semiconductor Corporation www.fairchildsemi.comKSC5305D Rev. A2 1

May 2010

KSC5305DNPN Silicon Transistor

Features High Voltage High Speed Power Switch Application Built-in Free-wheeling Diode makes efficient anti saturation operation Suitable for half bridge light ballast Applications No need to interest an hFE value because of low variable storage-time spread even though corner spirit product Low base drive requirement

Absolute Maximum Ratings Ta = 25C unless otherwise noted

* Pulse Test : Pulse Width = 5mS, Duty cycles 10%

Thermal Characteristics

Symbol Parameter Value UnitsVCBO Collector Base Voltage 800 VVCEO Collector Emitter Voltage 400 VVEBO Emitter Base Voltage 12 V

IC Collector Current (DC) 5 AICP *Collector Current (Pulse) 10 AIB Base Current (DC) 2 AIBP *Base Current (Pulse) 4 APC Power Dissipation (TC=25C) 75 WTJ Junction Temperature 150 C

TSTG Storage Temperature - 65 to 150 C

Symbol Parameter Rating UnitsRjc Thermal Resistance Junction to Case 1.65 C/WRja Junction to Ambient 62.5 C/W

C

B

E

Equivalent Circuit

1.Base 2.Collector 3.Emitter

1 TO-220

KSC

5305D

NPN

Silicon Transistor


Electrical Characteristics Ta=25C unless otherwise noted

* Pulse Test : Pulse Width = 5mS, Duty cycles 10%

Symbol Parameter Test Condition Min. Typ. Max. UnitsBVCBO Collector-Base Breakdown Voltage IC=1mA, IE=0 800 - - VBVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 400 - - VBVEBO Emitter-Base Breakdown Voltage IE=1mA, IC=0 12 - - VICBO Collector Cut-off Current VCB=500V, IE=0 - - 10 AIEBO Emitter Cut-off Current VEB= 9V, IC= 0 - - 10 AhFE1hFE2

DC Current Gain VCE=1V, IC=0.8A VCE=1V, IC=2A

228

--

--

VCE(sat) Collector-Emitter Saturation Voltage IC=0.8A, IB=0.08A IC=2A, IB=0.4A

--

--

0.40.5

VV

VBE(sat) Base-Emitter Saturation Voltage IC=0.8A, IB=0.08A IC=2A, IB=0.4A

--

--

1.01.0

VV

Cob Output Capacitance VCB=10V, f=1MHz - - 75 pFtON Turn On Time VCC=300V, IC=2A,

IB1=0.4A, IB2=-1A, RL=150

- - 150 nstSTG Storage Time - - 2 s

tF Fall Time - - 0.2 stSTG Storage Time VCC=15V, VZ=300V,

IC=2A, IB1=0.4A, IB2=-0.4A, LC=200H

- - 2.25 stF Fall Time - - 150 ns

VF Diode Forward Voltage IF=1A IF=2A

--

--

1.51.6

VV

trr * Reverse recovery time (di/dt = 10A/s)

IF=0.4A IF=1A IF=2A

---

8001.41.9

---

nsss

KSC

5305D

NPN

Silicon Transistor


Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. DC current Gain Figure 4. Collector-Emitter Saturation VoltageBase-Emitter Saturation Voltage

Figure 5. Collector-Emitter Saturation Voltage Figure 6. Base-Emitter Saturation Voltage

0 1 2 3 4 5 6 7 8 9 100

1

2

3

4

5

IB = 450mAIB = 500mA

IB = 250mA

IB = 150mA

IB = 300mAIB = 350mA

IB = 400mA

IB = 200mA

IB = 100mA

IB = 50mA

IB = 0

I C[A

], C

OLL

ECTO

R C

UR

REN

T

VCE[V], COLLECTOR-EMITTER VOLTAGE

0.01 0.1 1 101

10

100

-25oC25oC

Ta = 125oC

VCE = 1V

h FE,

DC

CU

RR

ENT

GAI

N

IC[A], COLLECTOR CURRENT

0.01 0.1 1 101

10

100

-20oC

25oC

Ta = 125oC

VCE = 5V

h FE,

DC

CU

RR

ENT

GAI

N


0.01 0.1 1 100.01

0.1

1

10

IC = 10 IB

VCE(sat)

VBE(sat)

V BE(

sat),

VC

E(sa

t)[V]

, SAT

UR

ATIO

N V

OLT

AGE


0.01 0.1 1 100.01

0.1

1

10IC = 5IB

-20oC

25oC

Ta = 125oC

V CE(

sat)[

V], S

ATU

RAT

ION

VO

LTAG

E


0.01 0.1 1 100.1

1

10

-20oC

25oC

Ta = 125oC

IC = 5IB

V BE(

sat),

SAT

UR

ATIO

N V

OLT

AGE


KSC

5305D

NPN

Silicon Transistor


Typical Characteristics (Continued)

Figure 7. Switching Time Figure 8. Collector Output Capacitance

Figure 9. Reverse Recovery Time Figure 10. Forward Diode Voltage

Figure 11. Safe Operating Area Figure 12. Power Derating

0.1 1 100.01

0.1

1

10

VCC = 300VIC = 5IB1 = -2.5IB2

tF

tSTG

t STG, t

F [s]

, TIM

E


1 10 1001

10

100

1000

f = 1MHz

Cob

[pF]

, CAP

ACIT

ANC

E

VCB[V], COLLECTOR-BASE VOLTAGE

1.0 1.5 2.00.8

1.0

1.2

1.4

1.6

trr[s

], R

EVER

SE R

ECO

VER

Y TI

ME

If[A], FORWARD CURRENT

0.01 0.1 1 100.1

1

10

V f [V

], FO

RW

ARD

DIO

DE

VOLT

AGE

IF[A], FORWARD DIODE CURRENT

10 100 10000.01

0.1

1

10

100

10sDC

1s

5ms1ms

I C[A

], C

OLL

ECTO

R C

UR

REN

T


0 25 50 75 100 125 150 1750

20

40

60

80

100

P C[W

], PO

WER

DIS

SIPA

TIO

N

TC[oC], CASE TEMPERATURE

KSC

5305D

NPN

Silicon Transistor


Typical Characteristics (Continued)

Figure 13. Reverse Bias Safe Operating Figure 14. RBSOA Saturation

200 300 400 500 600 700 800 9000

1

2

3

4

5

6

7

8

9

-5V

Vcc = 50VVBE(off) = -5VLC = 1mHIc = 4 Ib

I C[A

], C

OLL

ECTO

R C

UR

RE

NT


0 1 2 3 4 5 6 7 8 9 100

1

2

3

4

5

6

Ic = 3.3 Ib

Ic = 4 Ib

Ic = 2.2 Ib

Ic = 5 Ib

Vcc = 50VVBE(off) = -5VLC = 1mH

V CE[

V],

CO

LLE

CTO

R-E

MIT

TER

VO

LTAG

E

ICE[A], COLLECTOR CURRENT

KSC

5305D

NPN

Silicon Transistor


Physical Dimensions

4.50 0.209.90 0.20

1.52 0.10

0.80 0.102.40 0.20

10.00 0.20

1.27 0.10

3.60 0.10

(8.70)

2.80

0.

1015

.90

0.2

0

10.0

8 0

.30

18.9

5MAX

.

(1.70

)

(3.70

)(3.

00)

(1.46

)(1.

00)

(45)

9.20

0.

2013

.08

0.2

0

1.30

0.

10

1.30 +0.100.05

0.50 +0.100.05

2.54TYP[2.54 0.20]

2.54TYP[2.54 0.20]

TO-220

Dimensions in Millimeters

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KSC5305D