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KA5M0765RC产品承认书

CUSTOMER PRODUCT TYPE:

PRODUCT NAME:

CUSTOMER PRODUCT TYPE:

2009-6-20

A

深圳起秀电子商行

深圳市福田区中航路新亚洲电子城4B025A室

518000

0755 61329742 /61329752

0755 61329743

http://qixiudz.cn.alibaba.com

[email protected]

KA5M0765RC

KA5M0765RC

陈慧

王海成

王海成

电源IC

KA5M0765RC S P SPreliminary

S P S

FEATURES

• Precision fixed operating frequency (70kHz)

• Low start-up current (Typ. 100mA)

• Pulse by pulse current limiting

• Over current protection

• Over voltage protection (Min. 25V)

• Internal thermal shutdown function

• Under voltage lockout

• Internal high voltage sense FET

• Auto-restart mode

ORDERING INFORMATION

Device Package Topr (°°°°C)

KA5M0765RC TO-220F-5L −25°C to +85°C

TO -220F-5L

1. GND 2. Drain 3. Vcc 4. FB

BLOCK DIAGRAM

The SPS product family is specially designed for an off-line SMPSwith minimal external components. The SPS consist of high voltagepower SenseFET and current mode PWM IC.Included PWM controller features integrated fixed frequencyoscillator, under voltage lock-out, leading edge blanking, optimizedgate turn-on/turn-off driver, thermal shutdown protection, overvoltage protection, and temperature compensated precision currentsources for loop compensation and fault protection circuitry.Compared to discrete MOSFET and PWM controller or RCCsolution, a SPS can reduce total component count, design size,weight and at the same time increase efficiency, productivity, andsystem reliability. It has a basic platform well suited for cost-effective design in either aflyback converter or a forward converter.

1999 Fairchild Semiconductor Corporation

REV. B

KA5M0765RCPreliminary

ABSOLUTE MAXIMUM RATINGS

NOTES:1. Tj=25°C to 150°C2. Repetitive rating: Pulse width limited by maximum junction temperature3. L=24mH, starting Tj=25°C4. L=13uH, starting Tj=25°C

Characteristic Symbol Value Unit

Drain-source (GND) voltage (1) VDSS 650 V

Drain-Gate voltage (RGS=1MΩ) VDGR 650 V

Gate-source (GND) voltage VGS ±30 V

Drain current pulsed (2) IDM 28.0 ADC

Single pulsed avalanche energy (3) EAS 570 mJ

Avalanche current (4) IAS 20 A

Continuous drain current (TC=25°C) ID 7.0 ADC

Continuous drain current (TC=100°C) ID 5.6 ADC

Supply voltage VCC 30 V

Analog input voltage range VFB −0.3 to VSD V

Total power dissipation PD (wt H/S) 140 W

Derating 1.11 W/°C

Operating temperature TOPR −25 to +85 °C

Storage temperature TSTG −55 to +150 °C


NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

ELECTRICAL CHARACTERISTICS (SFET part)

(Ta=25°C unless otherwise specified)

Characteristic Symbol Test condition Min. Typ. Max. Unit

Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA 650 − − V

Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V − − 50 µA

VDS=0.8Max., Rating,VGS=0V, TC=125°C

− − 200 µA

Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=0.5A − 1.25 1.6 Ω

Forward transconductance (note) gfs VDS=50V, ID=0.5A 3.0 − − S

Input capacitance Ciss VGS=0V, VDS=25V,f=1MHz

− 1600 − pF

Output capacitance Coss − 310 −

Reverse transfer capacitance Crss − 120 −

Turn on delay time td(on) VDD=0.5BVDSS, ID=1.0A(MOSFET switchingtime are essentiallyindependent ofoperating temperature)

− 25 − nS

Rise time tr − 55 −

Turn off delay time td(off) − 80 −

Fall time tf − 50 −

Total gate charge(gate-source+gate-drain)

Qg VGS=10V, ID=1.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent ofoperating temperature)

− − 72 nC

Gate-source charge Qgs − 9.3 −

Gate-drain (Miller) charge Qgd − 29.3 −


NOTES:1. These parameters, although guaranteed, are not 100% tested in production2. These parameters, although guaranteed, are tested in EDS (wafer test) process

ELECTRICAL CHARACTERISTICS (Control part)

(Ta=25°C unless otherwise specified)

Characteristic Symbol Test condition Min. Typ. Max. Unit

REFERENCE SECTION

Output voltage (1) Vref Ta=25°C 4.80 5.00 5.20 V

Temperature Stability (1)(2) Vref/∆T −25°C≤Ta≤+85°C − 0.3 0.6 mV/°C

OSCILLATOR SECTION

Initial accuracy FOSC Ta=25°C 61 67 73 kHz

Frequency change with temperature (2) ∆F/∆T −25°C≤Ta≤+85°C − ±5 ±10 %

PWM SECTION

Maximum duty cycle Dmax − 74 77 80 %

FEEDBACK SECTION

Feedback source current IFB Ta=25°C, 0V<Vfb<3V 0.7 0.9 1.1 mA

Shutdown delay current Idelay Ta=25°C, 5V≤Vfb≤VSD 4 5 6 µA

OVER CURRENT PROTECTION SECTION

Over current protection IL(max) Max. inductor current 4.40 5.00 5.60 A

UVLO SECTION

Start threshold voltage Vth(H) − 8.4 9 9.6 V

Minimum operating voltage Vth(L) After turn on 14 15 16 V

TOTAL STANDBY CURRENT SECTION

Start current IST VCC=14V − 0.1 0.17 mA

Operating supply current(control part only)

IOPR VCC<28 − 7 12 mA

SHUTDOWN SECTION

Shutdown Feedback voltage VSD Vfb>6.5V 6.9 7.5 8.1 V

Thermal shutdown temperature (Tj) (1) TSD − 140 160 − °C

Over voltage protection VOVP VCC>24V 25 27 29 V


TYPICAL PERFORMANCE CHARACTERISTICS (SFET part)

0 2 4 6 8 100.0

0.5

1.0

1.5

2.0

2.5

3.0

@ Note : Tj=25

Vgs=10V

Vgs=20V

R DS(on

) , [

]

Drai

n-So

urce

On-

Resi

stan

ce

ID,Drain Current [A]

Fig. 2 Transfer Characteristics Fig 1. Output Characteristics

Fig. 4 Source-Drain Diode Forward Voltage Fig. 3 On-Resistance vs. Drain Current

Fig. 6 Gate Charge vs. Gate-Source Voltage Fig.5 Capacitance vs. Drain-Source Voltage

1 100.1

1

10

@Notes: 1. 300µs Pulse Test 2. TC = 25 oC

VGSTop : 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0VBottom:4.5V

I D, Dra

in C

urre

nt [A

]

VDS, Drain-Source Voltage [V]2 4 6 8 10

0.1

1

10

@ Notes: 1. VDS = 30 V 2. 300 µs Pulse Test

-25 oC25 oC

150 oC

I D, Dra

in C

urre

nt [A

]

VGS, Gate-Source Voltage [V]

0.4 0.6 0.8 1.0 1.2 1.40.1

1

10

@ Notes: 1. VGS = 0V 2. 300 µs Pulse Test

25 oC150 oC

I DR, R

ever

se D

rain

Cur

rent

[A]

VSD, Source-Drain Voltage [V]

1 100

200

400

600

800

1000

1200

1400

1600

1800

Crss

Coss

Ciss

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Capa

citan

ce [p

F]

VDS, Drain-Source Voltage [V]0 5 10 15 20 25

0

2

4

6

8

10

VDS=520V

VDS=320V

VDS=130V

@ Note : ID=3.0A

V GS,G

ate-

Sour

ce V

olta

ge[V

]

QG,Total Gate Charge [nC]


TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

Fig. 7 Breakdown Voltage vs. Temperature Fig. 8 On-Resistance vs. Temperature

Fig. 10 Max. Drain Current vs. Case Temperature Fig. 9 Max. Safe Operating Area

Fig. 11 Thermal Response

-50 0 50 100 1500.8

0.9

1.0

1.1

1.2

@ Notes : 1. VGS = 0V

2. ID = 250µA

TJ, Junction Temperature [oC]

BVDS

S, (No

rmal

ized

)

Drai

n-So

urce

Bre

akdo

wn V

olta

ge

-50 0 50 100 1500.0

0.5

1.0

1.5

2.0

2.5

@ Notes: 1. VGS = 10V 2. ID = 1.5 A

TJ, Junction Temperature [oC]

R DS(o

n), (

Norm

aliz

ed)

Drai

n-So

urce

On-

Resis

tanc

e

100 101 102 10310-2

10-1

100

101

102

10 µs

DC

100 µs1 ms

10 ms

@ Notes : 1. TC = 25

oC

2. TJ = 150 oC

3. Single Pulse

Operation in This Area is Limited by R DS(on)

I D , Drain Current [A]

VDS , Drain-Source Voltage [V]25 50 75 100 125 150

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I D, Dr

ain

Curre

nt [A

]

TC, Case Temperature [oC]

10-5 10-4 10-3 10-2 10-1 100 10110-2

10-1

100

single pulse

0.2

0.1

0.010.02

0.05

D=0.5

@ Notes : 1. ZθJC(t)=1.25

oC/W Max.

2. Duty Factor, D=t1/t2 3. TJM-TC=PDM*ZθJC(t)

Z θJC(t) , Thermal Response

t1 , Square Wave Pulse Duration [sec]


TYPICAL PERFORMANCE CHARACTERISTICS (Control part)

Fig.1 Operating Frequency

0.80.850.9

0.951

1.051.1

1.151.2

Fosc

Fig.2 Feedback Source Current

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Ifb

Fig.3 Operating Current

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Iop

Fig.4 Max Inductor Current

0.8

0.85

0.9

0.95

1

1.05

1.1

-25 0 25 50 75 100 125 150

Ipeak

Fig.5 Start up Current

0.5

0.7

0.9

1.1

1.3

1.5

-25 0 25 50 75 100 125 150

Istart

Fig.6 Start Threshold Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vstart



(These characteristic graphs are normalized at Ta=25°C)

Fig.7 Stop Threshold Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vstop

Fig.8 Maximum Duty Cycle

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Dmax

Fig.9 Vcc Zener Voltage

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Vz

Fig.10 Shutdown Feedback Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vsd

Fig.11 Shutdown Delay Current

0.80.850.9

0.951

1.051.1

1.151.2

-25 0 25 50 75 100 125 150

Idelay

Fig.12 Over Voltage Protection

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vovp



(These characteristic graphs are normalized at Ta=25°C)

Fig.13 Soft Start Voltage

0.85

0.9

0.95

1

1.05

1.1

1.15

-25 0 25 50 75 100 125 150

Vss

Fig.14 Drain Source Turn-onResistance

0

0.5

1

1.5

2

2.5

-25 0 25 50 75 100 125 150

Rdson

Environmental Questionnaire Disclaimer The information provided in this environmental statement is, to our knowledge, correct as of the date indicated on this page. However, there is no guarantee to completeness or accuracy, as some information is derived from data sources outside the company. Also, there may not be information included in this statement regarding the minute amounts of dopant and metal materials contained within the electrically active or passive devices contained within the finished product.

Fairchild Semiconductors Statement Regarding the Restriction of Hazardous Substances

This document is Fairchild Semiconductor’s statement regarding the directive of the European Parliament and of the council on the restriction of the use of certain hazardous substances in electrical and electronic equipment (RoHS directive). The responses in the document are based upon information collected from Fairchild Semiconductor facilities worldwide, specifically our manufacturing sites in: South Portland, Maine, USA; West Jordan, Utah, USA; Mountaintop, Pennsylvania, USA; Loveland, Colorado, USA; Penang, Malaysia; Cebu, Philippines; Bucheon, Korea; Suzhou China; and Singapore. Products manufactured by Fairchild Semiconductor are in compliance with the RoHS directive. Specifically, products manufactured by Fairchild Semiconductor do not contain the substances listed in the table below in concentrations greater than the listed Maximum limit value.

Substance Maximum Limit (ppm) Cadmium (Cd) 100 Lead (Pb) 1000 (1) (2) Mercury (Hg) 1000 Hexavalent Chromium (Cr6+) 1000 Poly Brominated Biphenyls (PBB) 1000 Poly Brominated Diphenyl ethers (PBDE) 1000

(1) Applicable to FSC products with Pb-free lead finish only (2) Maximum limit does not apply to applications for which exemptions have been granted by the RoHS directive Name: David Lancaster Position: Staff Environmental Engineer

Signature: Date: May 9, 2006

SGS

Documents

KA5M0765RC产品承认书 - dzsc.com · signature and stamp of authorized signatory 规格书 NO ： 日期/DATE ： 批准： authorize: 审核： check: 拟定： design: 地址：

KA5M0765RC产品承认书 - dzsc.com · signature and stamp of authorized signatory 规格书 NO ：日期/DATE ：批准： authorize: 审核： check: 拟定： design: 地址：