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Join Seminar with Infineon in Shenzhen 25/Aug/06Join Seminar with Infineon in Shenzhen 25/Aug/06 PowerELab LimitedPowerELab Limited www.PowerESIM.comwww.PowerESIM.com 11
Quality DesignQuality Design
forfor
Valued EngineerValued Engineer
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PowerESIM FeaturesPowerESIM Features
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PowerESIM FeaturesPowerESIM Features
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PowerESIM FeaturesPowerESIM Features
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PowerESIM FeaturesPowerESIM Features
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SPICE vs PowerESIMSPICE vs PowerESIM
PowerESIM asking for SPICE asking for
K
Np
Ns
Co
Do
M1
Vi
Rp
Rp_ac
Rs
Rs_ac
Rm
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PowerESIM is all about - Select and DecisePowerESIM is all about - Select and Decise
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Result orientated – Loss analysisResult orientated – Loss analysis
Conversion Efficiency
01020304050607080
70 120 170 220 270
Input voltage RMS (V)
Efficie
ncy (
%)
Measurement
Simulation
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Result orientated – Thermal analysisResult orientated – Thermal analysis
Measured
Simulated
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Result orientated – Waveform analysisResult orientated – Waveform analysis
Measured
Simulated
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Result orientated – Loop Stability & TransientResult orientated – Loop Stability & Transient
1 10 100 1 103
1 104
1 105
200
150
100
50
0
50
100
150
200200
200
Phasei
3 1041 f i
Measured
Simulated
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Result orientated – Input Current HarmonicResult orientated – Input Current Harmonic
-0.1
0
0.1
0.2
0.3
0.4
3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39
Harmonic number
Cur
rent
RM
S (A
)
Measured
Class D Limits
Measured
Simulated
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Result orientated – MTBF & Life TimeResult orientated – MTBF & Life Time
Simulated
Measured
Will be reported at 1/Mar/2100
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Result orientated – DVT reportResult orientated – DVT report
Simulated
Measured
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Build a XformerBuild a Xformer
Simulated
Lk=2.982uH
Measured
Lk=2.787uH
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Add your own component to all analytical toolsAdd your own component to all analytical tools
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Consideration on MOSFETConsideration on MOSFET
Gate drive
Drain voltage
Drain current
t0 t1 t2 t3 t4
t0-t1 drain current catch up with load current
t1-t2 drain voltage falling period
t2-t3 MOSFET fully turn on
t3-t4 drain voltage rising period with miller effect
t4-t5 drain current falling period
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Ns Voltage
Diode voltage
Diode current
t1 t2 t3 t4 t5
t0-t1 diode in forward bias
t1-t2 forward current drop to zero
t2-t3 from zero current to peak reverse current (ta)
t3-t4 reverse current droping period
t4-t5 leakage current with reverse voltage
t0
Consideration on DiodeConsideration on Diode
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RdcRskin Rskin
Rdc
Rproximity
RcoreRfringe
Ipri ImagIsec
• Rdc – wire dc losses
• Rskin – wire skin effect losses
• Rproximity – wire proximity effect losses
• Rfringe – fringing flux losses
• Rcore – core losses
Consideration of MagneticConsideration of Magnetic
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Freq.
Loss
Loss=1W@100kHz
Loss=3W@200kHz
B
Loss
Core Loss Characteristics – Core Loss Characteristics – frequency and fluxfrequency and flux
• Every Engineer know, but . . .
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Idc_bias
Loss
D
Loss
Idc_bias
D
Core Loss Characteristics – Core Loss Characteristics – dc bias and duty cycledc bias and duty cycle
• Data sheet Loss is Idc_bias =0
• Large loss @ Idc_bias >Bs
• Somewhere in between must exist rising slope @B
• Higher Freq. higher loss
• Higher flux change rate higher loss
• Smaller D means higher flux change rate
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ESR
Irms
Temp.
ESR
ESR=1@25oC
ESR=3@-40oC
Freq.
ESR
ESR=1@100kHz
ESR=2@100Hz
Consideration on CapacitorConsideration on Capacitor
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Fm
d(s)
ve(s)
Rs
R s D T s
2 LR s D T s
2 L
-
+
-
+
Cc(s)
Ac(s)Zp(s)
Vi(s)
Vo(s)
iL(s)Bc(s)
++
+
Consideration on Loop AnalysisConsideration on Loop Analysis
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By introducing a second order (two pole) transfer functionwith resonate frequency at half of the switching frequencyand a damping factor
2
13
23
2
2
2
ln12
ln
5.05.021
1)(
mm
mm
sssF
swsw
Consideration on Subharmonic InstabilityConsideration on Subharmonic Instability
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Fm
d(s)
ve(s)
Rs
R s D T s
2 LR s D T s
2 L
-
+
-
+
Cc(s)
Ac(s)Zp(s)
Vi(s)
Vo(s)
iL(s)Bc(s)
++
+
F(s)
More complicated graphical modelMore complicated graphical model
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Automatic compensationAutomatic compensation
• After all, you only need a final compensated design
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Consideration on MTBFConsideration on MTBF
p = bArscQET . . .
Where p is the part failure rate
b is the base failure rate
is factors modify the base failure rate
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MTBF result with a clickMTBF result with a click
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• Consideration on Thermistor
• Consideration on PWM
• Consideration on Bridge:
:
:
• Consideration on Resistor
More Consideration . . . More Consideration . . .
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