Datasheet Rev. 1.1, 2013-12-01

IPW40N65F / IPW40N65FFD

TRENCHSTOPT M

SMPS Fast DuoPack

IGBT With soft, fast recovery anti-parallel Rapid Diode

IPW40N65F / IPW40N65FFD

2 Rev. 1.1., 2013-12-01

Fast DuoPack: IGBT in TRENCHSTOP™ SMPS technology with soft, fast recovery

anti-parallel Rapid Diode

IPW40N65F1 IPW40N65FFD

Features

Highly robust DuoPack Diode

Low Eoss and high light load efficiency

Low Qg optimized for fast switching

RCE(on),eq stable vs. temperature

Fast switching for higher efficiency

Tvj,max=175°C; electrical parameters at Tvj=150°C for ease of comparison to MOSFET

Application

Silver BOX, Server, Telecom Switch Mode Power Supply

Package: PG-TO247-3

Table 1 Key Performance Parameters

Parameter Value Unit

VCE 650 V

RCE(on),typ @ TC=25°C 0.066 Ω

Qrr 490 nC

trr 55 ns

Irrm 12.7 A

Qg,typ 73 nC

IC,pulse 120 A

Eoss @ 400V 3.0 µJ

1 Not recommended for DCM operation.

IPW40N65F / IPW40N65FFD

3 Rev. 1.1., 2013-12-01

Maximum Ratings @ Tj=25°C unless specified

Parameter Symbol Value Unit

Collector-emitter voltage VCE 650 V

DC collector current1 IC

TC = 25°C 69 A

TC = 100°C 37 A

Pulsed collector current2 ICpulse 120 A

Turn off safe operating area VCE ≤ 650V,Tvj ≤ 150°C

- 120 A

Diode forward current1 IF

TC = 25°C 30 A

TC = 100°C 15 A

Diode pulse current2 IFpulse 45 A

Gate emitter voltage VGE V

Static ±20

Transient Gate-Emitter Voltage (tp=10µs, D<0.01) ±30

Power dissipation TC = 25°C1 Ptot 208 W

Power dissipation TC = 100°C1 83 W

Operating junction temperature Tvj -40…+175 °C

Storage temperature Tstg -55…+150 °C

Soldering temperature (wave soldering only allowed at leads, 1.6 mm (0.063 in.) from case for 10s)

Tsold 260 °C

__________________________

1 Limited by Tj=150°C.

2 tp limited Tj=150°C.

IPW40N65F / IPW40N65FFD

4 Rev. 1.1., 2013-12-01

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions

Value

Unit min. typ. max.

Static Characteristic Collector-emitter break down

voltage V(BR)CES VGE=0V, IC=0.2mA 650 - - V

Temperature coeff. of BR voltage ΔV(BR)CES/ΔTj VGE=0V, IC=4mA - 0.50 - V/°C

Diode forward voltage

VF

IF=20.0A Tvj=25°C

-

1.45

1.8 V

Tvj=100°C - 1.44 -

Tvj=150°C - 1.41 -

Gate-emitter threshold voltage VGE(th) IC=400A, VCE=VGE 3.2 4 4.8 V

Zero gate voltage collector current ICES

VCE=650V, VGE=0V

mA Tj=25°C - - 0.04

Tj=150°C - 0.30 -

Gate-emitter leakage current IGES VCE=0V, VGE=20V - - 100 nA

Transconductance gfs VCE=20V, IC=40A - 52 - S

IPW40N65F / IPW40N65FFD

5 Rev. 1.1., 2013-12-01

Parameter Symbol Conditions

Value

Unit min. typ. max.

Dynamic Characteristic

Input capacitance Cies VCE=25V, VGE=0V, f=1MHz

- 2300 -

pF

Output capacitance Coes - 54 -

Reverse transfer capacitance Cres - 10 -

Effective output capacitance, energy related

1

Co(er) VGS=0V. VCE=0…520V - 38 -

Effective output capacitance, time related

2

Co(tr) IC=constant, VGS=0V, VCE=0…520V

- 42 -

Energy stored in output capacitance

Eoss VCE=400V, VGE=0V, f=1MHz

- 3.0 - µJ

Gate to source charge Qgs VCC= 520V, IC=40.0 A, VGE= 12V

- 13 - nC

Gate to drain charge Qgd - 24 -

Gate charge total Qg - 73 -

Turn-on delay time td(on) Tvj=25°C, VCC=400V, IC=20.0A, VGE= 0.0/12.0V,

RG=6Ω

- 18 - ns

Rise time tr - 7 - ns

Turn-off delay time td(off) - 83 - ns

Fall time tf - 3 - ns

__________________________

1 Co(er) is a fix capacitance that gives the same stored energy as Coss while VCE is rising from 0 to 80% V(BR)CES

2 Co(tr) is a fix capacitance that gives the same charging time as Coss while VCE is rising from 0 to 80% V(BR)CES

IPW40N65F / IPW40N65FFD

6 Rev. 1.1., 2013-12-01

MOS like Maximum Rating

Electrical Characteristic

Static Parameter Symbol Conditions

Value Unit

min. typ. max.

Collector-emitter on-state resistance

1)

RCE(on)

VGE=12V, IC=20.0A

Ω

TC=25°C - 0.066 0.090

TC=100°C - 0.070 -

TC=150°C - 0.073 -

Gate resistance Rg f=1Mhz open collector

- 1.3 - Ω

Anti-Parallel Diode Characteristic, at Tvj = 25 °C

Diode reverse recovery time trr Tvj=25°C,

VR=400V,

IF=20.0A,

dIF/dt=1400 A/µs

- 55 - ns

Diode reverse recovery charge Qrr - 490 - nC

Diode peak reverse recovery current

Irr - 12.7 - A

Diode peak rate of fall of reverse recovery current during tb

dirr/dt - -1040 - A/µs

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic IGBT thermal resistance, Rth(j-c) 0.60

K/W

junction – case

Diode thermal resistance, Rth(j-c) 1.80 junction - case

Thermal resistance, Rth(j-a) PG-TO247-3 40 junction – ambient

__________________________

1 RCE(eq) is computer at IC=Inom/2 and Vcesat at Inom/2.

IPW40N65F / IPW40N65FFD

7 Rev. 1.1., 2013-12-01

IPW40N65F / IPW40N65FFD

8 Rev. 1.1., 2013-12-01

IPW40N65F / IPW40N65FFD

9 Rev. 1.1., 2013-12-01

IPW40N65F / IPW40N65FFD

10 Rev. 1.1., 2013-12-01

IPW40N65F / IPW40N65FFD

11 Rev. 1.1., 2013-12-01

Revision History

IPW40N65F / IPW40N65FFD

Revision: 2013-12-01, Rev. 1.1

Previous Revision:

Revision Date Subjects (major changes since last revision)

1.1 2013-12-01 Preliminary datasheet

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