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Introduction to My Lab
Chun-Hsing Li 李俊興
Associate Professor
THz Integrated Circuits and Systems Lab
Department of Electrical Engineering, National Taiwan University
National Taiwan University
Outline
• Bio
• Experience sharing
• My research
• Summary
2
Outline
• Bio
• Experience sharing
• My research
• Summary
3
Bio
• Education
– Ph.D., Dept. Electronics Engineering, NCTU, 2010 ~ 2013
– M.S., Dept. Electronics Engineering, NCTU, 2005 ~ 2007
– B.S., Dept. Electrophysics, NCTU, 2001 ~ 2005
• Working Experience
– Associate Professor, EE, NTU, Aug. 2020 ~ present (電機系&電信所)
– Assistant Professor, ESS, NTHU, Aug. 2018 ~ Jul. 2020
– Assistant Professor, EE, NCU, Aug. 2014 ~ Jul. 2018
– Senior Engineering, MTK, Mar. 2014 ~ Jun. 2014
– Postdoc, NCTU, Aug. 2013 ~ Mar. 2014
• Research
– RF, millimeter-wave, and THz integrated circuit and system design
for sensor, communication, and energy harvesting applications.
• Teaching
– EM (I) and THz integrated circuits and systems.
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Outline
• Bio
• Experience sharing
• My research
• Summary
5
Experience Sharing•找興趣
•交朋友
•努力做
•不怕失怕
•好心情
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Outline
• Bio
• Experience sharing
• My research
• Summary
7
THz Band
• Frequency: 300 GHz ~ 3 THz, λ: 1 mm ~ 100 μm
8Pfeiffer, IMS WS’10
THz Security Applications
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THRUVISION
250-GHz Passive Imager
JPL, Caltech
675-GHz FMCW Radar
THz Biomedical Applications
10
Tooth Cavity Detection Skin Cancer Detection
Medicine for Arthritis Pharmaceutical
Ref: TeraView, TeraSense, and E. Pickwell et al., JPDAP’06
Skin Surface
THz for Cyber-Physical Fusion/Digital Twin
116G, SAMSUNG, 2020
THz for Aesthetic Medicine Applications
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Spots Wrinkles Texture Pores
UV Spots Brown Spots Red Areas Porphyrins
Ref: VISIA, CANFIELD and 璞之妍診所
System Miniaturization
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Miniaturization
TeraView Ltd.
Bulky! Integrated on portable devices,
like Google glass EE2?
Analog
Front-End
Antenna Array
Memory
Φ
Φ
Φ
THz
Front-End
RF
Front-EndDigital Baseband
Processor
Φ
Φ
Φ
THz
Front-End
RF
Front-EndPower
Management IC
Heterogeneous THz Electronic Systems
• Leverage advantages of different technologies
• Low-cost and high-performance
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High-Q Inductor
Lin, TED’05
Deal, TTST’11
SoP CarrierMEMS Switch
Rebeiz, MM’01
InP HEMT fmax ~ 1.2 THz
Proposed Interconnects – Bondwires + TL
• Multi-path structures with transmission lines
• Broadest bandwidth reported thus far
15
0.18-μm
CMOS Chip
G
S
G
Reference
Plane Reference
Plane
G
S
G
GIPD
Carrier
C.-H. Li et al., IMS’13, TMTT’14, RFIT’15, IMS’15, and US Patent
BW: dc to 456 GHz
Mea. IL= 1.5 dB at 330 GHz
BW: dc to 84 GHz
Mea. IL= 3 dB at 84 GHz
BW: dc to 92 GHz
Mea. IL= 3 dB at 92 GHz
0.18-μm
Chip
G
S
G
Reference
Plane Reference
Plane
G
S
G
GIPD
Carrier
LbChip
IPD
Carrier
Lb
Z0 Z0
TL1 TL3
TL2 TL4
θ,ZT
LbChip
IPD
Carrier
Lb
Z0 Z0
TL1 TL3
TL2 TL4
θ,ZT
Lb
LbChip
Z0
TL1
θ,ZT
Lb
Z0
TL2
Chip
Antenna
+ Detector
Antenna +
Interconnect
+ Detector
Chip 1 Chip 2
Proposed Interconnects – EM Coupling
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Chip
Carrier
ODOD
W
Port 1
Port 2
Z
XY
Differential In/
Differential Out
Single-Ended In/
Differential Out
Single-Ended In/
Single-Ended Out
Transmission
Lines
TRL De-embedding
Standards
Back-to-Back Balun
GSG
GSGChip
Carrier
Reference
Plane
Reference
Plane
C.-H. Li et al., IMS’13, IMS’20 (Submitted), and US Patent (To be submitted to TMTT)
vin
vout
Chip
IPD Carrier
Coupled
T-Line
Coupled
T-Line
λ/4 λ/4
+ -
+ -
vin+
vout
Chip
IPD Carrier
Coupled
T-Line
vin-
Coupled
T-Line
λ/4 λ/4
vin
vout
Chip
IPD Carrier
Coupled
T-Line
Coupled
T-Line
λ/4 λ/4
Reference
Plane
Reference
Plane GSG
GSG
GSG
GSG
40-nm
CMOS Chip
IPD Carrier
Dual-Band Operation
Mea. IL= 0.5 dB@164 GHz Mea. IL= 1.5 dB@324 GHz Mea. IL= 2 dB@330 GHz
0.18-μm
CMOS Chip
Proposed Dielectric Resonator Antenna• 1st dielectric resonator antenna (DRA) at THz frequencies
• 1st higher-order mode DRA at THz frequencies
17
y
xz
Lf Wf
Metal
Dummy
High-Z
Silicon LDRA
WDRA
HDRA
M1
Feeding
Patch
Pin WTL
θ
Φ
|H| (dB)
-20
-40
-60
-80
0y x
z
y
xz
z= z1
Front View Top View at z= z1
TEδ,1,7 mode
On-Chip
Patch
Antenna
CMOS
Imager
CMOS
Imager
On-Chip
DRA
On-Chip DRA
On-Chip
Patch
Antenna
CMOS Imager
CMOS
Imager
C.-H. Li et al., TTST’17
VDD
TL1
TL2
CB1
RB1
M1
RD1
CB2
RB2
M2
RD2
VGS
IFoutLevel
Shifter
OP Amp
DRA or
Patch Antenna
7.9 dBi Gain
74% ηEff at
341 GHz
On-Chip Patch: 0.1 dBi Gain, 20% ηEff at 340 GHz
Measured 6.7 dB gain enhancement
40-nm CMOS Chip
Osc
BCB Carrier
On-Carrier
Antenna
Array
Interconnect
Proposed 338-GHz SoP Transmitter
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Ld,1
M1
Lg,2 Lg,3Lg,1
Ld,2 Ld,3
M2 M3
VDD,OSC
Ls,1 Ls,2 Ls,3
Lp,1 Lp,2 Lp,3
TL2
CB1
CM
TL1
CB2
vout+
vout-
lTL (λ/4)
lTL (λ/4)
A
B
Chip
Carrier
ODOD
W
Port 1
Port 2
Z
XY
40-nm Chip
Carrier
Proposed THz
Interconnect
Differentially-Excited
Patch Antenna Array
• EIRP= GT× PT
C.-H. Li et al., MWCL’14 and TMTT’15
GT= 22 dBi, ηT= 88% at 340 GHzPo= -11 dBm at 340 GHz
IL= 0.9 dB
at 340 GHz
DC Pads for Wire-Bonding
40-nm Chip
DC Pads for Wire-Bonding
TX1 Antenna
Array
TX2 Antenna
Array
Proposed 336-GHz CMOS Heterodyne Receiver
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PLL
Harmonic
Oscillator
Buffer
Antenna
Mixer
IF+IF-
This Work 720 μm
36
0 μ
m
VGS
VD
D,M
ixe
r
vB,IF+ GND GND
GND
GND
VDD,OSC
GND
VD
D,B
uffe
r
Harmonic
Oscillator
Mixer Patch Antenna
GND vB,IF-
• 1st CMOS heterodyne receiver at THz frequencies
C.-H. Li et al., TTST’16
Bias-T
Bias-T
Lm,1
Cm,1
Cm,2
M4
M5
Rd,1
Rd,2
M6
M7
VDD,Buffer
VDD,Mixer
VGS
VDD,Buffer
VGS
Lm,2Cm,3
Lm,3 Cm,4
RB,1
RB,2
vLO+
vLO-
TL3
TL4 vIF+
vIF-
vB,IF+
vB,IF-
RFinCB1
23
1.5
μm
194 μm
w/i Slot
Pin
1.8 μm
GT= -5.5 dBi, ηT= 6.5%
at 340 GHzPo= -11 dBm at 340 GHz
Ld,1
M1
Lg,2Lg,3 Lg,1
Ld,2Ld,3
M2M3
VDD,OSC
Ls,1Ls,2Ls,3
Lp,1Lp,2Lp,3
TL2
CB1
CM
TL1
CB2
vout+
vout-
lTL (λ/4)
lTL (λ/4)
THz Imaging System w/i Heterodyne Receiver
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WR2.2 Horn
Antenna
Signal Source
Module (x8)
fin ( ~42.5 GHz)
Agilent E8257D
Signal Generator
VDI AMC 306 1st
Lens
Step
Motor
DUT
PCB
340-GHz RFE
Balun
vB,IF+
vB,IF-
vB,IF2nd
Lens
• 1st THz Imaging system using CMOS heterodyne receiver
C.-H. Li et al., TTST’16X (mm)
PIF,N (dB)
0 20 40 60 80 1000
25
50
Y (
mm
) 0
-41
1.4 mm
X (mm)0 20 40 60 80 100
0
25
50
Y (
mm
)PIF,N (dB)
0
-41
PAVCO
Buffer
DRA
MixerDRA
ILFD
(÷2)
ADF
4159
Chirp Generator
RX
FM X2
FM X2 FM X2
Buffer
ILFD
(÷2)
IF Amp
IFout
TX
CML
(÷2)
FM X2
PA
Reflector
Antenna
System
Balun
PA
PA
Single Chip in 40-nm CMOS
Proposed FMCW Radar Architecture
• Target for 1st CMOS THz FMCW radar
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Proposed THz Reflector Antenna System
Main
Reflector
Sub
Reflector 1
Sub
Reflector 2
Sub Reflector 1 Sub Reflector 2 Main Reflector
Main Reflector
(Ellipsoid)
Sub Reflector 1
(Paraboloid)
Sub Reflector 2
(Paraboloid)
Planar Mirror
Mea.: 2.6×5 mm2
Theory: 1.3×1.3 mm2
Mea.: 11×4 mm2
Theory: 1.3×1.3 mm2
Mea.: 17×12.5 mm2
Theory: 8.1×8.1 mm2
DM= 40 cm
DS1= 10 cm
DSs= 6 cm
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Our RF Energy Harvesters
• Multi-band operation
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6G
• ComSenTer
24IEEE Spectrum
6G Vision
25
Outline
• Bio
• Experience sharing
• My research
• Summary
26
