Interaction of plasma, Interaction of plasma, electronic and photon electronic and photon

flows with the surfaces of flows with the surfaces of solidssolids

StaffStaff

Professors and Professors and researchers:researchers:

Stefanovich G. Ph.DStefanovich G. Ph.DBoriskov P. Ph.DBoriskov P. Ph.DVelichko A. Ph.DVelichko A. Ph.DKazakovaKazakova E. Ph.DE. Ph.DPergament A. Ph.DPergament A. Ph.DPodgornii V. Ph.DPodgornii V. Ph.D

Post-graduate students:

Kuldin N.; Putrolinen V.

Students:Vlasov F. 5Melekhova A. 5Cheremisin A. 5Sergantov D. 5Manuilov S. 5Brikina Y. 4 Futrik I. 4

• Methods of deposition of the vanadium dioxide thin films (by reactive magnetron sputtering) are developed. The films exhibit metal-insulator transition and high sensitivity to corpuscular and photon effects.

• The lithographic process on the basis of inorganic oxide resist with resolution < 100 nm is developed for obtaining of a microrelief on silicon, silicon dioxide, vanadium and vanadium oxides.

Research of deposition processes and Research of deposition processes and modification of properties of transition metal modification of properties of transition metal

oxide filmsoxide films

Key parameters of the lithographic Key parameters of the lithographic

processprocess

•Resolution < 100 nm, •Sensitivity 10 C/cm2 (for electron-

beam exposure), 0.5 mJ/cm2 (for optical exposure)

•High plasma- and heat stability allowing dry plasma-chemical development of the resist and etching of nano-structures.

1m 1m 100nm Vanadium-oxide resist pattern on Si. Dose 75 C/sm2

Height of a step vanadium-oxide resist on Si.

Study of physical properties of structures

with transition metal oxide films.

The following researches were carried out:The following researches were carried out:

1.The electrical and optical control of 1.The electrical and optical control of dynamics of switching in structure Si-SiОdynamics of switching in structure Si-SiО22--

VОVО22 was realized and investigated. was realized and investigated.

Schematic diagrams of the Si-SiO2-VO2 of structure

I,mA

U, V4 8-4-8

0,1

0,2

-0,1

-0,2

I,mA

U, V4 8-4-8

0,1

0,2

-0,1

-0,2

(a) (b)

The dynamic current-voltage characteristics of the Si-SiO2-VO2 structure

Study of physical properties of structures with Study of physical properties of structures with

transition metal oxide filmstransition metal oxide films..2. The phenomena of chaotic dynamics in

structures with VO2 are investigated.

It is shown that such switching structures are the model circuits for study of a wide variety of the noise phenomena: a stochastic resonance, generation of noise, supervision of explosive noise. In some points of current-voltage characteristics the noise with features of the determined chaos is observed.

Spectral density of fluctuations, voltage and phase portraits of fluctuations at various values of control parameter.

Study of physical properties of structures

with transition metal oxide films.

3.The action of an electrical field on metal - insulator transition is investigated. The opportunity of electronic switching of transition is shown. The theoretical model of action of a field on transition is developed.

0

50

100

150

200

250

300

350

0,0 0,5 1,0 1,5 2,0

E . 10 - 6 , В / см

T , K

1

2

3

4 0

50

100

150

200

250

300

350

0,0 0,2 0,4 0,6 0,8 1,0

E . 10 - 6 , В / см

T t , K

Dependence of transition temperature on an electric fieldDependence of transition temperature on an electric field

Study of physical properties of structures

with transition metal oxide films.

4. 4. Termocromic effect in vanadium oxides is investigated. Action of the thermal and plasma treatments on optical properties of the films is shown. The regims of treatments, which replace the maximum optical contrast into yellow region of a spectrum are developed, that is optimal for display engineering.

Shift of spectral dependence of reflection factor

CVD CVD synthesis carbon synthesis carbon nanotubesnanotubes

• The The technology of the plasma technology of the plasma stimulatstimulation depositionion deposition of of amorphous amorphous carbon carbon layers layers with nanotubeswith nanotubes are are developed.developed.

CVD CVD synthesis carbon synthesis carbon nanotubesnanotubes

CVD CVD synthesis carbon synthesis carbon nanotubesnanotubes

PPlasma lasma modification of the modification of the shungitshungit..

• The action of the arc plasma The action of the arc plasma dischagedischage on on natural natural carboncontaningcarboncontaning material - material - shungitshungit is is investigated. investigated. The modification of theThe modification of the initial initial carboncarbon material under material under the the action of plasma is action of plasma is shown. shown. Depending on power dischage Depending on power dischage and gas and gas environmentenvironment, g, graphite, raphite, SiCSiC, carbon , carbon compositions containing compositions containing fullerensfullerens and carbon and carbon nanotubesnanotubes are formedare formed. . The deposition of the The deposition of the diamondlike films diamondlike films is is also also possiblepossible, when the , when the shungit target is sputteredshungit target is sputtered..

PPublicationsublications1. A.L. Pergament. Metal-insulator transitions and electronic switching. Larionov Press,

Petrozavodsk, 2003. (monography)

2. A.L. Pergament, G.B. Stefanovich, E.L. Kazakova, D.G. Stefanovich and A.A. Velichko. Thin Films of Amorphous and Hydrated Vanadium Oxides: Growth, Properties and Applications/ / Solid State Phenomena. – 2003. – V. 90-91. – p.p. 97-102.

3. A.A. Velichko, N.A. Kuldin, G.B. Stefanovich, and A.L. Pergaent. Coontrolled Swithing Dynamics in Si-SiO2-VO2 Structures//Technical Physics Letters, -2003. -Vol.29, No.6, pp.507-509.

4. Величко А.А., Стефанович Г.Б, Пергамент А.Л., Борисков П.П. Детерминированный шум в структурах на основе диоксида ванадия // ПЖТФ. – 2003. – Т.29. – Вып.10. – С.82 – 87.

5. A. Pergament “Metal-insulator transition: the Mott criterion and coherence length” J. Phys.: Condensed Matter v.15, n.19, p.3217-3224.

6. Стефанович Г.Б., Пергамент А.Л., Величко А.А., Стефанович Д.Г., Кулдин Н.А., Борисков П.П. Аморфный оксид ванадия – резист для нанолитографии // Сбор. Докл. 15-го Межд. Симпозиума «Тонкие пленки в оптике и электронике». Харьков. – 2003. – C. 263-267.

7. Стефанович Г.Б., Пергамент А.Л., Стефанович Д.Г., Величко А.А., Кулдин Н.А., Борисков П.П. Получение нанокристаллических пленок ванадия и исследование их свойств // Сбор. Докл. 15-го Межд. Симпозиума «Тонкие пленки в оптике и электронике». Харьков. – 2003. – C. 77-81.

8. Stefanovich G.B., Khakhaev A.D., Gurtov V.A., Velichko A.A., Pergament A.L., Kikalov D.O. Amorphous vanadium oxide: new material for integrated optics // Proceed. of the XXXVII annual conf. of the Finnish Phys. Society. March 20-22. Helsinki. Finland. – 2003. – P. 270.

9. Stefanovich G.B., Velichko A.A., Pergament A.L., Stefanovich D.G., Kuldin N.A. Amorphous vanadium oxide: new resist material for nanolithography // Proceed. of the XXXVII annual conf. of the Finnish Phys. Society. March 20-22. Helsinki. Finland. – 2003. – P. 252.

• KAZAKOVA E.• ELECTRONIC AND ION PROCESSES IN HYDRATED PENOXIDE

OF VANADIUM

• VELICHKO A.• SWITCHING IN THIN-FILM MICRO- AND NANOSTRUCTURE ON

THE BASIS OF TRANSITION METALS OXIDES WITH METAL - ISOLATOR TRANSITION

• STEFANOVICH D.• ELECTRONIC CONTROL OF METAL - ISOLATOR TRANSITION

Ph.D. Thesis