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1
Integrated MEMS by adhesive bonding
M.Esashi and S.Tanaka
Tohoku University
1. Introduction
2. Wafer bonding first approach
3. Wafer bonding last approach
4. Open collaboration for MEMS on LSI
5. Conclusions
12. July, 2012
21990 2000 2010 year
Pressure sensor
Accelerometer & Gyro
Communication
Image
(MEMS array)
Engine controlBlood pressure sensing
Accelerometer for airbag
Tire pressure monitoring
Gyro for cameraAccelerometer for user interface
MEMS switch
Print head Display (DMD)
IR imager (Night vision)
Trends of MEMS (Micro Electro Mechanical Systems) products
Oscillator
Microphone
Structure + sensor + circuit + actuator
Advantages
・Miniaturization(high sensitivity, low power, good spatial resolution, etc.)
・Integration(low cost, array etc.)
3
Inertia sensors (SIP) MEMS chip + LSI chip
Array MEMS for display
(SOC) MEMS on LSI
(Toyota)(ST microelectronics)
(Invensense)
MEMS for wireless communication
(Adhesive bonding of MEMS wafer on LSI wafer)
4
1. Introduction
2. Multi Band Wireless Communication Systems
Multiband filter on LSI
PZT switch on LSI
SAW filter on LSI
3. Sensors for Safety
4. Open Collaboration
28. May, 2012
5
CMOS compatible AlN Lamb wave resonator
Ge
Al
Au/Cr
AlN
1. Ge patterning and SiO2 deposition
2. Metal patterning and AlN deposition
3. AlN and Au/Cr patterning
4. Ge sacrificial etching
SiO2
Mo
LSI
(K.Hirano (Japan Denpa Ltd,) 2nd Internl. Workshop on Piezo-devices Based on Latest MEMS Tech.(2008) 111)
Filters and oscillators for multi-band RF systems
(Polytec high frequency laser doppler imaging)
LSI
Deposition-based approach (Surface micromachining)
(300℃)
6Wafer-level Hetero-Integration Approaches
AlN Lamb wave resonator
Micro mechanical filters on LSI
SAW filter on LSI
(Damage-free MEMS fabrication on LSI)(High-density, small stray capacitance and inductance)
(Electrical interconnection using metal bonding) (Flexibility in fabrication)
7Application of adhesive bonding
Tactile sensorBonding with BCB (Cyclotene)
Micromechanical resonatorBonding with polyimidePartly etching of polymer after bonding
SAW filter on LSIBonding with UV curable resinRemove after temporary bonding
Surface micromachining
Sacrificial layer
Adhesive bonding process
8(H.Yanagida, IEEE MEMS2011, 324)
Removal of polymers by ozone in acetic acid
9AlN/Si composite disk resonators and FBAR for multiband wireless sultiband wireless systemsystems(T.Matsumura (NICT), J. of Micromech. Microeng., 20, 9 (2010) 95027)
Disk resonator
High freq. laser dopplerimaging (293 MHz) (Polytec UHF120)
10
FBAR (Film Balk Acoustic Resonator)(T.Matsumura, M.Esashi, H.Harada and S.Tanaka, 2009 IEEE Internl. Ultrasonic Symposium (2009) 2141)
11PZT MEMS Switch on Integrated Circuit
A
C
A B
GND RF I/O GND
Contact
Bias electrode
LSIAl pad
C
BAuPZT
Cu SiO2
Pt
(Matsuo, Moriyama, Esashi, Tanaka (Tohoku Univ.), IEEE MEMS 2012, 1153-1156)
PZTPt
Au
10MΩ
Deflection
0
2
4
6
8
10
12
14
0 2 4 6 8 10
Def
lect
ion
[µm
]Voltage [V]
Initial gap
Initial gap
12
PZT MEMS Switch on Integrated Circuit
Si wafer
IC wafer
PZTPolymer Metal
(Matsuo, Moriyama, Esashi, Tanaka (Tohoku Univ.), IEEE MEMS 2012, 1153-1156)
13
CMOS switch control circuit
INV INVINVINV
Delay Circuit
CLKVDD
GND
SOUT_1(Output “00”)
SOUT_2(Output “10”)
SOUT_3(Output “01”)
SOUT_4(Output “11”)
Delay Circuit
INV
INV
INV
Decorder DFF INV
INVDFF
DFF
DFF
INV
INV
INV
IN_1IN_2
0.0
4.0
8.0
12.0
16.0
20.0
24.0
0 2000 4000 6000 8000 10000
Volta
ge [V
]
Time [µs]
IN_1IN_2DOUT_1DOUT_2DOUT_3DOUT_4
VDD : power supply, 3.3VCLK : clock signal,3.3 V, 5 MHzIN_1, IN_2 : switching signal, 3.3 VDOUT_1~4 : D flip-flop’s output
14
PZT sol-gel deposition process
Automated machine
PbO,TiO2
(Sol-gel : Mitsubishi Materials, ZrO2:TiO2:PbO = 52:48:110 in mol.)
15
Dispensing and coating
Drying (200℃) and pyrolysis (300℃)
Crystallization (680℃ RTA)
3 times
PZT sol-gel deposition process
16
SAW devices on LSI
(Kyeong-Dong Park, M.Esashi, S.Tanaka, IEEJ The 26th Sensor Symposium, 37 (2009)
SAW device
LSI
Frequency spectrum obtained from SAW oscillator on LSI (502 MHz)
Wafer bonding last approach
17
1. Introduction2. Multi Band Wireless Communication Systems3. Sensors for Safety
Accelerometer and gyroRange imager using optical scannerTactile sensor network
4. Wafer Level Packaging 5. Open Collaboration
28. May, 2012
18
Rotational gyroscope levitated electrostatically using high speed digital signal control
MESAG-100 (Micro Electrostatically Suspended Accelerometer Gyro)
(Simultaneous measurement of 2 axes rotation and 3 axes acceleration)
(T.Murakoshi et.al. : Jpn. J. Appli. Phys., 42, Part1 No.4B (2003) p.2468)
Rotor diameter1.5mm 74,000rpm
19
Ranging imager for safety systems and other applications
(T.Ishikawa,H.Inomata : Japan Signal Technical Report, 33, 1 (2009) 41)
Color correspond to the distance
2D Optical scanner(N.Asada et.al., IEEE Trans. on Magnetics, 30 (1994) 4647)
Ebisu station (platform doors using the ranging imager)
20
(S.Kobayashi & M.Esashi, Technical Digest of the 9th Sensor Symposium,(1990),137)Common 2 wires tactile sensor array (polling type)
(1,000 Tr./chip in our lab., 1,000,000 Tr./chip in company)
2121Tactile sensor network for robot (event driven type)
(M.Makihata, M.Muroyama, 26th Sensor Symposium (Oct. 15-16, 2009))
Safe nursing robot
22Network voltage
23Fabrication process of tactile sensor
24
1. Introduction
2. Multi Band Wireless Communication Systems
3. Sensors for Safety
4. Open Collaboration
Shared wafer
Hands-on access fab.
Partnership
28. May, 2012
25
MEMS process facility for 20 mm waferMany process equipments have been made in house.Simple and basic equipments are suitable for training people who have experiences of all the process and for developing new devices taking advantages of process flexibility.The facility has been shared by many laboratories.More than 100 companies dispatched researchers (full time, 2years).
Unique facility like toy for MEMS prototyping
26
Ricoh, Toyota motor, Pioneer, Nippon signal, Toppan TDC,Kitagawa iron works, Sumitomo precision, NIDEC COPAL elec. Nikko, Toyota central R&D lab, Nippon dempa kogyo, Japan aviation elect. Ind., MEMS core, MEMSAS, Furukawa Electric, DensoLaboratories in Tohoku Univ.
Shared CMOS LSI wafer
27
→ 「Shared wafer」 for additive MEMS processes to reduce the development cost
Innovation center for fusion of advanced technologies 2007~2016FY
http://www.rdceim.tohoku.ac.jp/
→ 「Hetero Integration」 to integrated heterogeneouscomponents for value added devices.
→ 「Massive parallel EB exposure systems」 to produce small volume LSI cost effectively.
→ 「Shared facility for industry」 to enable the MEMS Hands-on access fab. for prototyping without facilities.
World-leading innovative R&D center 2010 ~ 2013FYhttp://www8.cao.go.jp/cstp/sentan/index.html
Solutions to the economical crisis of advanced LSI
28
Concept of the massive parallel EB exposure system(2D array of micro columns which have active matrix nc-Si electron emitter array)
Nanocrystalline silicon
29(N.Ikegami et.al., Active-Matrix nc-Si Electron Emitter Array for Massively Parallel Direct-Write Electron-Beam System, SPIE 2012 Advanced Lithography (2012/2/12-16) San Jose, USA)
Nc (Nanocrystalline)-Si emitter array fabricated on SOI substrate
(A Kojima, H. Ohyi and N. Koshida, J. Vac. Sci. Technol., B26 (2008) 2064)
Cascaded tunnel junction for ballistic electron emission
30100 x 100 active-matrix driving LSI
100×100
31
Electron BeamElectron Beam
Confirmation of electron emission from NC-Si electron emitter driven by CMOS LSI
NC-Si electron emitter
CMOS LSI
32
Electron emitter array
Lens Lens
V acceleration > V acceleration
Electronic aberration compensation
Aberration
33
Al
In Au Cr
LSI
Glass (or Si)
LSI
Glass (or Si)
1) Alignment of electron source to LSI
2) Au-In-Au TLP bonding (200℃~)
LSI
3) Ge etching (H2O2)
The fabrication process of active matrix electron source using adhesive bonding
LSI
4) Polymer removal
Ge
Polyimide
Pierce gun for condensing and collimation of electron beam
34
Shared facility for industry to prototype MEMS devices (4 / 6 inch)Hands-on access fab. (Nishizawa memorial research center in Tohoku Univ.)
Contact person : Assoc. Prof. Kentaro Totsu [email protected]
Companies which cannot prepare their own facility dispatch their employees to operate equipments by themselves.
35Shared facility for industry to prototype MEMS devices (4 / 6 inch) Hands-on access fab.
36Sendai MEMS showroom (2012/5/16 renewal opening)
Efficient way to access accumulated knowledge is important for heterogeneous integration
37
Tohoku Univ. Micro System Integration Center・MEMS prototyping facility (20mm □)
・Micro/Nanomachining research and education Center (MNC) (2 inch LSI)
・Hands on access fab. (4/6 inch)
MEMS Park Consortium (MEMSPC)
MEMS Core (4/6 inch line)
Advantest components et.al.
Germany FhG
MEMS Industry Group in USA
Belgium IMEC
Industrial Tech. Inst. Miyagi Pref.
MEMS PC member companies (80)
Local companies
Annex Esashi lab.
Sendai city
Sendai stealth dicing lab.
MEMS show room
Tsukuba Innovation Arena (TIA)
AIST Research Center for Ubiquitous MEMS and Micro (UMEMSME) (8 inch)
Nissan motors, Dainippon Printing et.al. France LETI
Murata MFG
NICT
Crestec
Chiba Univ.
Funding program for world-leading Innovative R&D on Science and Technology (FIRST)(2010-2013) ~5MUS$ / Year
Tokyo Univ. of Agriculture and Tech.
Ricoh, Toyota motor, Pioneer, Nippon signal, Toppan technical design center, Kitagawa ironworks, Sumitomo precision, NIDEC COPAL electronics, Nikko, Toyota central R&D labs, Nippon dempa kogyo, Japan aviation electronics industry, MEMS core, MEMSAS, Furukawa Electric, Denso
R&D Center of Excellence forIntegrated Microsystems(2007-2016) ~5MUS$ / Year
Hamamatsu Photonics. et.al.
Italy Poly Tech. Torino USA U.C.Berkeley
Collaboration
38
FhG Germany – Sendai city partnership signing ceremonyAnnual Fraunhofer Symposium in Sendai, Project center 2012~
39
Basic
Company
In the past
University
Company University
At present
Company University
In future
Facility for prototypingApplication
Government research institutes
Government research institutes
Government research institutes
40
Efficient development for heterogeneous integration
(MEMS park consortium http://www.memspc.jp)Free MEMS Seminar in Tokyo (Aug. 23-25, 2006) 280 attendees
Free MEMS Seminar in Sendai (Aug. 22-24, 2007) 75 attendees
Free MEMS Seminar in Fukuoka (Aug.20-22, 2008) 150 attendeesFree MEMS Seminar in Nagoya (Aug.4-6, 2009) 100 attendeesFree MEMS Seminar in Tsukuba (Aug.5-7, 2010) 211 attendeesFree MEMS Seminar in Kyoto (Aug.9-11, 2011) 175 attendeesFree MEMS Seminar in Tokyo (Aug.22-24, 2012)
(in The Univ. of Tokyo)
High-tech. small volume production → Job creation
Efficient utilization of facilities
Information from universities
41
Conclusions
1. Multi Band Wireless Communication SystemsMEMS oscillator on LSI (Surface micromachining)
Multiband filter on LSI (Wafer bonding first approach)
PZT switch on LSI (Wafer bonding first approach)
SAW filter on LSI (Wafer bonding last approach)
2. Sensors for SafetyAccelerometer and gyroRange imager using optical scannerTactile sensor network Adhesive bonding
3. Open collaboration for MEMS on LSIShared wafer Massive parallel EB exposure systemsShared facility for industry (Hands-on access fab. )
42
Prof. Assoc.Prof. Prof. Assoc.Prof. Assis.Prof.T.Ono S.Tanaka Y.Haga K.Totsu S.Yoshida
(Nanomachining) (RF MEMS) (Medical) (Hands-on access fab.) (Polymer)
Assis.Prof. Assis.Prof. Assis.Prof. Guest Prof. Assis.Prof.M.Muroyama H.Miyashita Y.Kawai T.Gessner Y.C.Lin (from TW)
(LSI design) (EB exposure) (Piezo electric) (Packaging) (MEMS materials)
Acknowledgment to collaborators FhG ENAS Germany