6

int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based

  • Upload
    others

  • View
    2

  • Download
    0

Embed Size (px)

Citation preview

Page 1: int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based
Page 2: int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based
Page 3: int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based

m6

m6freq = 5.800 GHzMaxGain1 = 11.897

Max

Gai

n1

Max

Gai

n1

freq, GHz

freq, GHz

NF

min

NF

min

freq, GHz

freq, GHz

Page 4: int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based
Page 5: int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based
Page 6: int ele 04 kishor - Sathyabama Universityjournals-sathyabama.com/archives/ies/int ele 04 kishor.pdf · 3.5 2.5 1.5 0.5 Q C5 substrate based HEMT INA min of RT Duroid substrate based