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Institutt for Informatikk
IN5240 S Parameters, Impedance Matching and
Smith Charts
Sumit Bagga* and Dag T. Wisland**
*Staff IC Design Engineer, Novelda AS**CTO, Novelda AS
Institutt for Informatikk
Outline
• Scattering parameters*• Impedance matching• Smith chart
*Covered in detail in amplifier design
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Scattering Parameters
• Difficult to measure voltages/currents at RF àS-parameters w/ ‘power’ flow– "# = "%&,( − "*, where under matched conditions "%&,( = +(,/8/0
• Signal flow and Mason’s rule to calculate input reflection, transducer gain of a two-port network
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
[Niknejad, EECS 242]
Institutt for Informatikk
Return Loss and Mismatch Loss
• Absolute impedance: !" + $"
• Reflection coefficient, Γ: (()*+)-./-
((.*+)-./-, where 01 is
the source impedance
• Voltage standing wave ratio (VSWR): 234254
• Return loss (S11): −20log(Γ)• Mismatch loss: −10(1 − Γ")
IN5240: Design of CMOS RF-Integrated Circuits,
Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Smith Chart
• Graphical tool invented in 1939 by Phillip H. Smith to evaluate input-output transfer functions, complex functions, such as:– Complex voltage and current transmission and reflections
coefficients, power reflection and transmission coefficients, reflection and return loss, standing wave loss factor, !"#$ and !"%&
– Reflection coefficient for a loss-less line is a circle of unitary radius in the complex plane à Smith chart domain
• Identify all impedances of the reflection coefficient
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Frank Lynch, W4FAL
Page 12
24 April 2008
The officalversion!
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Transmission Line &Impedance Admittance
• Characteristic impedance– "# = "%("'+ "% tanh , -)/("%+ "' tanh , -), where , =0 + 23
– 45/6 = 4748• Impedance is resistance + j(reactance)
– " = 9 + 2:• Admittance is conductance + j(susceptance)
– Y= ; + 2<
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Smith Chart – Impedance Form
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Constant resistance ‘circle’
Constant reactance ‘arc’
Institutt for Informatikk
Real Part of Smith Chart w/ |"| ≤ $
• Normalized resistance %, center is &'(& , 0 & radius is '
'(&
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
[Amanogawa, 2006 - Digital Maestro Series]
Transmission Lines
© Amanogawa, 2006 - Digital Maestro Series 170
The result for the real part indicates that on the complex plane with coordinates (Re(Γ), Im(Γ)) all the possible impedances with a given normalized resistance r are found on a circle with
1, 01 1rr r+ +
Center = Radius =
As the normalized resistance r varies from 0 to ∞ , we obtain a family of circles completely contained inside the domain of the reflection coefficient | Γ | ≤ 1 .
Im(Γ )
Re(Γ )
r = 0
r →∞
r = 1
r = 0.5
r = 5
Institutt for Informatikk
Imaginary Part of Smith Chart w/ |"| ≤ $
• Normalized reactance %, center is 1, () & radius is ()
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
[Amanogawa, 2006 - Digital Maestro Series]
Transmission Lines
© Amanogawa, 2006 - Digital Maestro Series 171
The result for the imaginary part indicates that on the complex plane with coordinates (Re(Γ), Im(Γ)) all the possible impedances with a given normalized reactance x are found on a circle with
1 11,x x
Center = Radius =
As the normalized reactance x varies from -∞ to ∞ , we obtain a family of arcs contained inside the domain of the reflection coefficient | Γ | ≤ 1 .
Im(Γ )
Re(Γ )x = 0
x →±∞
x = 1
x = 0.5
x = -1x = - 0.5
Institutt for Informatikk
Smith Chart Admittance
• Impedance and admittance à opposite sides of the Smith chart à imaginary parts w/ opposite signs – Positive (inductive) reactance à negative (inductive)
susceptance– Negative (capacitive) reactance à positive (capacitive)
susceptance
• For !" = $ + &' and (" = ) + &* = +,-./, then
) = ,,0-/0 and b = 2/
,0-/0
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Basics of Smith Chart
• Impedance, ! " à reflection coefficient, #(")• Reflection coefficient, #(")à impedance, ! "• Impedance, ! " à admittance, &(")• Admittance, Y " à impedance, !(")• VSWR (voltage standing wave ratio)
– Maximum and minimum locations ("()* and "(+,) for
the voltage standing wave pattern
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
! " à #(")
• Step 1: Normalize the impedance – '( " = ! " /!+ = ,/!+ + .//!+ = 0 + .1/!+
• Step 2: On the circle of constant normalized resistance, find 0
• Step 3: On the arc of constant normalized reactance, find 1
• Intersection of two curves à reflection coefficient à magnitude and the phase angle of Γ
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
! " à VSWR
• Step 1: Find the reflection coefficient and the normalized impedance on Smith chart
• Step 2: Draw circle of constant reflection coefficient amplitude
• Step 3: Find intersection of this circle with the real positive axis for the reflection coefficient à "'()
• Eq. *+ "'() = -./ 0123-4/ 0123
= -./5-4/5
= 6789
•IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for InformatikkIN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for InformatikkIN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
!(#)à % #
• Step 1: Find complex point on the chart for !(#)• Step 2: Normalized impedance
– '( # = * + ,-• Step 3: Actual impedance
– % # = '( # %. = %. * + ,- = %.* + ,%.x
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
! " à #(")
• Step 1: Find load reflection coefficient and the
normalized load impedance on chart
• Step 2: Draw circle of constant reflection
coefficient amplitude
• Step 3: Normalized admittance is the point on the
circle of constant |Γ| diametrically opposite to the
normalized impedance
– ) = 180° or λ/4
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga
Institutt for InformatikkIN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Transmission Line
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga
• ‘Short lines’ à lumped element distributed model
– Shorted line à magnetic flux, ! = #$– Open line à electric field, Q = &'
• “… signals travel instantly, ( → 0”
Institutt for Informatikk
Transmission Line contd.
• Velocity of the sine wave is !"#
• If $ and % remain constant with &, the velocity of all sine waves will be the same!– Ideal transmission line: '(), +) = '(0, + − 0)with 0 =) 12
• Relationship between ' and 3 at the input of our transmission line à characteristic impedance, 4 =5(6,7)8 6,7 = "
#
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Transmission Line contd.
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
• Finite transmission line with a termination resistance– Current on T-line ≠ current at load à discontinuity à
reflected wave– Γ$ = −1 (($ = 0), Γ$ = 1 (($ = ∞) & Γ$ = 0 (($ = +,)
• Steady-state, eq. circuit à -.. = /.( 1212314
)à T-line
– T-line is visible if we disconnect the source or load!
Transmission Line Termination
Rs
i+ =v+
Z0
+Vs
−
+v+
−
ℓ
Z0, td i =vL
RL
Consider a finite transmission line with a terminationresistanceAt the load we know that Ohm’s law is valid: IL = VL/RL
So at time t = ℓ/v, our pulse reaches the load. Sincethe current on the T-line is i+ = v+/Z0 = Vs/(Z0 + Rs)and the current at the load is VL/RL, a discontinuity isproduced at the load.
University of California, Berkeley EECS 117 Lecture 2 – p. 5/22
Institutt for Informatikk
Transmission Line Summary
• For !"= !$ à Γ"= 0, and there is no reflection
– Forward wave carries energy à distributed '’) and *’)absorb energy temporarily à electrical energy to !$
– Ideal transmission line does not dissipate energy, only
transport energy!
• For !"= 0, à Γ"= −1– Voltage on the load is 0; current flowing into the load is
twice the current of the forward wave
• For !"= ∞, à Γ"= 1– Current into the load is 0; voltage on the load is double the
forward wave's voltage
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Wavelength
• Wire length, ℓ > #/10 of RF signal à transmission line effects (variation of current/voltage along signal path)– @ 60 GHz à 1/16th rule of thumb
• Complex plane, a circle with '{0,0} and radius |Γ-|à possible reflection coefficients along T-line àvalues of the line impedance at any location
• Phase, . = 212 = 2(24λ)Δ(180/4)à find 29:;and 29<= of VSWR
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for InformatikkIN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for InformatikkIN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Matching
• Absorb or resonate imaginary part of source (or load) impedance
• Transform real part for maximum power transfer
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
L-Matching
ECE145A/ECE218A Impedance Matching Notes set #5 Page 2
“L” Matching Networks 8 possibilities for single frequency (narrow-band) lumped element matching networks.
Figure is from: G. Gonzalez, Microwave Transistor Amplifiers: Analysis and Design, Second Ed., Prentice Hall, 1997. These networks are used to cancel the reactive component of the load and transform the real part so that the full available power is delivered into the real part of the load impedance. 1. Absorb or resonate imaginary part of Zs and ZL . 2. Transform real part as needed to obtain maximum power transfer.
Rev. January 22, 2007 Prof. S. Long, ECE, UCSB
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
[G. Gonzalez, 1997]
Institutt for Informatikk
LC Matching
Frank Lynch, W4FAL
Page 19
24 April 2008
Series L (increasing L)
Series Cdecreasing Series R (increasing)
Parallel L (decreasing)Parallel Rdecreasing
Parallel Cincreasing
What Components do on the Smith Chart….
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
[F. Lynch, W4FAL]
Institutt for Informatikk
Stubs
Frank Lynch, W4FAL
Page 25
24 April 2008
OC Stub
SC Stub
Stubs can rotate all the way around the chart (unlike shunt L’s and C’s),but along circles of constant conductance (Like L’s and C’s).
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
[F. Lynch, W4FAL]
Institutt for InformatikkIN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for InformatikkIN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Series – Parallel Transformation
• Recall, !" = !$(1 + ()) & +" = +$(1 + 1/()), where ( is the unloaded quality-factor– !||/: +" = 1/ω/" and +$ = 1/ω/$
• Conjugate match à design matching network to match 23 to 24 and cancel reactances
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Example L-Matching
• LPF with known !" and !#
• Quality factor, $ = &'&(− *à +# = ,/!# and
+" = !"/,– / = 0(/1 and 2 = */10'
• Through parallel to series transformation, reactances are equal and opposite, with !# = !"∗
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
Institutt for Informatikk
Example L-Matching contd.
• Match at ! = 1590MHz with '( = 50 Ω and
'* = 500 Ω– , = 2 3.14 159016 = 1e10 rad/s
• 5 = 67767 − 1 = 3, so 9( = 3'( = 150 Ω and
9* = '*/3 = 500/3 = 167 Ω• @ ,, C = 0.6 pF and L = 15 nH
IN5240: Design of CMOS RF-Integrated
Circuits, Dag T. Wisland and Sumit Bagga
Institutt for InformatikkIN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
ECE145A/ECE218A Impedance Matching Notes set #5 Page 9
Figure is from: G. Gonzalez, Microwave Transistor Amplifiers: Analysis and Design, Second Ed., Prentice Hall, 1997.
Rev. January 22, 2007 Prof. S. Long, ECE, UCSB
[G. Gonzalez, 1997]
Institutt for Informatikk
Broadband Match
Frank Lynch, W4FAL
Page 29
24 April 2008
Using Many Lumped Elements
Although the graph below was done on a software program, this complex (5L’s, 5C’s) matching network could have easilybeen done on a paper smith chart. The same calculations to do this would have been very time consuming.
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga
[F. Lynch, W4FAL]
Institutt for Informatikk
Key References
1. Amanogawa, Digital Maestro Series, 20062. A. M. Niknejad, EECS 1173. F. Lynch, W4FAL4. G. Gonzalez, Microwave Transistor Amplifiers:
Analysis and Design, Second Ed., Prentice Hall, 1997
IN5240: Design of CMOS RF-Integrated Circuits, Dag T. Wisland and Sumit Bagga