IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 12, … · 2018-02-07 · IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 12, DECEMBER 2017 4777 Golden List of Reviewers for

IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 12, DECEMBER 2017 4777

Golden List of Reviewers for 2017

First Name Last Name Affiliation Country

Ahmad Abbas King Abdulaziz University Saudi ArabiaDawit Abdi Addis Ababa Science and Technology University EthiopiaDavid Abe U.S. Naval Research Laboratory United StatesEdward Abubakirov Institute for Applied Physics RussiaKathalingam Adaikalam Dongguk University KoreaGina Adam University of California Santa Barbara United StatesFikru Adamu-Lema University of Glasgow United KingdomAryan Afzalian TSMC Europe BV BelgiumKamal Aggarwal Stanford University United StatesPratik Agnihotri University of Albany United StatesPaula Agopian University of São Paulo BrazilNidhi Agrawal The Pennsylvania State University United StatesPaulina Aguirre Fernandez ETH Zürich SwitzerlandMoaaz Ahmed Hong Kong University of Science and Technology Hong KongRizwan Ahmed National Centre for Physics PakistanShaikh Ahmed Southern Illinois University at Carbondale United StatesAyayi Ahyi Auburn University United StatesArvind Ajoy University of Notre Dame United StatesMasamichi Akazawa Hokkaido University JapanSina Akhbari University of California Berkeley United StatesAkintunde Ibitayo(Tayo)

Akinwande Massachusetts Institute of Technology United States

Deji Akinwande University of Texas Austin United StatesArun Goud Akkala Purdue University United StatesZlatan Aksamija University of Massachusetts Amherst United StatesEthem Erkan Aktakka University of Michigan, Ann Arbor United StatesAHM Zahirul Alam International Islamic University Malaysia MalaysiaSyed Alam Everspin Technologies United StatesAlfonso Alarcón University of Paris-Sud FranceStefano Alberti Ecole Polytechnique Fédérale de Lausanne SwitzerlandJohn Albrecht Michigan State University United StatesManuel Aldegunde University of Notre Dame United StatesKonstantinos Alexandrou Columbia University United StatesRobert R. Alfano City College of New York United StatesMohammad Alhawari Khalifa University of Science Technology

and Research United Arab EmiratesGhusoon Ali Al-Mustansiriyah University IraqAliReza Alian IMEC BelgiumFabien Alibart IEMN FranceNasir Alimardani Oregon State University United StatesSemsettin Altındal Gazi University TurkeyJoaquin Alvarado Benemérita Universidad Autónoma de Puebla MexicoEsteve Amat CEA-LETI FranceStefano Ambrogio Politecnico di Milano ItalyIddo Amit University of Exeter

Mathematics and Physical Sciences United Kingdom

Digital Object Identifier 10.1109/TED.2017.2766458

0018-9383 © 2017 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission.See http://www.ieee.org/publications_standards/publications/rights/index.html for more information.

4778 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 12, DECEMBER 2017


Salvatore Amoroso Gold Standard Simulations United KingdomXia An Peking University ChinaM. P. (Anant) Anantram University of Washington United StatesTakashi Ando IBM United StatesFrédéric André Thales Electron Devices FranceAndrey Andreev University of New Mexixo United StatesKah Wee Ang National University of Singapore SingaporeCostin Anghel Institut Superieur d’Electronique de Paris FranceAnne-Johan Annema University of Twente NetherlandsAzadeh Ansari University of Michigan United StatesLida Ansari University College Cork IrelandThomas Anthopoulous Imperial College London United KingdomMarina Antoniou University of Cambridge United KingdomMohammadKazem

Anvarifard Semnan University Iran

Sergio Anza Dassault Systemes SpainJin-Ping Ao University of Tokushima JapanHitoshi Aoki MoDeCH Inc. JapanFumitaka Arai Toshiba Corporation Semiconductor Company JapanAaron Arehart The Ohio State University United StatesHiroaki Arimura IMEC BelgiumSeiichi Aritome Hiroshima University JapanAndrew Armstrong Sandia National Laboratories United StatesMartin Arnold Anvil Semiconductors United KingdomMichael Arnold University of Wisconsin-Madison United StatesAntonio Arreghini IMEC BelgiumLaurent Artola ONERA FranceSubramaniam Arulkumaran NTU SingaporeAndrey Arzhannikov Budker Institute of Nuclear Physics RussiaTanemasa Asano Kyushu University JapanPeter Asbeck University of California San Diego United StatesMina Asghari Heidarlou University of Notre Dame United StatesSotirios Athanasiou STMicroelectronics FranceRod Augur GlobalFoundries Inc United StatesCharles Augustine Intel Corporation United StatesFernando Avila-Herrera CINVESTAV MexicoKonstantinos Avramidis Karlsruhe Institute of Technology GermanyMohsin Aziz University of Glasgow United KingdomStephane Azzopardi Safran Group FranceJeff Babcock Texas Instruments Inc. United StatesDubravko Babic University of Zagreb CroatiaRoman Baburske Infineon Technologies AG GermanyGiorgio Baccarani University of Bologna ItalyDongil Bae Samsung Electronics Hwaseong Site KoreaHagyoul Bae KAIST KoreaJong-Uk Bae LG Display KoreaKang-Jun Baeg Pukyong National University KoreaNavjeet Bagga Indian Institute of Technology Roorkee IndiaEldad Bahat Treidel Ferdinand-Braun-Institut für Höchstfrequenztechnik GermanyJe-Hyeong Bahk University of Cincinnati United StatesSandeep Bahl Texas Instruments Inc. United StatesAmir Sajjad Bahman Aalborg University DenmarkBehraad Bahreyni Simon Fraser University CanadaSrimanta Baishya National Institute of Technology Silchar IndiaSaidur Bakaul Argonne National Laboratory United StatesMuhannad Bakir Georgia Institute of Technology United StatesSriram Balasubramanian GlobalFoundries United States



Simone Balatti Politecnico di Milano ItalyFrancis Balestra IMEP-LAHC FranceAdam Balkcum Communications and Power Industries United StatesIlya Bandurkin Institute of Applied Physics, Russian

Academy of Sciences RussiaSupriyo Bandyopadhyay Virginia Commonwealth University United StatesKaustav Banerjee University of California Santa Barbara United StatesSanjay Banerjee University of Texas Austin United StatesSeth Bank University of Texas Austin United StatesQilong Bao Hong Kong University of Science and Technology Hong KongJean-Charles Barbe CEA-LETI MINATEC FranceRanjan Barik Central Electronics Engineering Research Institute IndiaHugh Barnaby Arizona State University United StatesAnna Barnett University of Sussex United KingdomLarry Barnett Mountain Technology United StatesPedro Barquinha FCT-UNL PortugalMark Basten Northorp Grumman Corp. United StatesBaidyanath Basu College of Engineering & Technology IndiaDipanjan Basu Intel Corporation United StatesAnton Bauer Fraunhofer Institute for Integrated Systems

and Device Technology GermanyFriedhelm Bauer ABB Switzerland Ltd SwitzerlandMehmet Baykan Intel Corporation United StatesAntonios Bazigos AMS AustriaKarsten Beckmann SUNY Polytechnic Institute United StatesJeroen Beeckman Universiteit Gent BelgiumHanmant Belgal Intel Corporation United StatesFederico Bella Politecnico di Torino ItalyMarco Bellini ABB Switzerland Ltd SwitzerlandAttilio Belmonte IMEC BelgiumVictor Belyaev Moscow Region State University RussiaVitor Bender Federal University of Pampa BrazilAugusto Benvenuti Micron ItalyDan Berco National Chiao Tung University TaiwanMartin Berg Lund University SwedenGennadi Bersuker Aerospace Corporation United StatesFrancesco Bertazzi Politecnico di Torino ItalyMarc Bescond IM2NP FranceCengiz Besikci Middle East Technical University TurkeyAnup Bhalla United Silicon Carbide Inc. United StatesK. N. Bhat Indian Institute of Science IndiaSitangshu Bhattacharya Indian Institute of Information Technology-Allahabad IndiaBrinda Bhowmick NIT Silchar IndiaE. Bielejec Sandia National Laboratories United StatesPhilip Birtel Thales Group GermanyDavide Bisi Transphorm, Inc. United StatesAbhijit Biswas University of Calcutta IndiaAyan Biswas Virginia Commonwealth University United StatesD. Biswas Bhabha Atomic Research Centre IndiaDhrubes Biswas Indian Institute of Technology Kharagpur IndiaKarabi Biswas IIT Kharagpur IndiaJo Bito Georgia Institute of Technology United StatesBeatriz Blanco-Filgueira University of Santiago de Compostela SpainMonica Blank Communications and Power Industries United StatesBoni Boksteen ABB Semiconductors SwitzerlandColombo Bolognesi ETH-Zurich SwitzerlandAlex Bolotnikov GE Global Research Center United States



Fabrizio Bonani Politecnico di Torino ItalyJohn Booske University of Wisconsin-Madison United StatesEdith Borie Karlsruhe Institute of Technology GermanyErnst Bosch Thales Electron Devices GmbH GermanyGianluca Boselli Texas Instruments Inc. United StatesBertrand Boudart Universite de Caen Normandie FranceThomas Bougher Georgia Institute of Technology United StatesAbdelhakim Bourennane LAAS-CNRS FranceFarid Boussaid The University of Western Australia AustraliaMed Bouzid Universite Savoie Mont-Blanc FranceTimothy Boykin University of Alabama Huntsville United StatesVladimir L. Bratman Institute of Applied Physics, Russian

Academy of Sciences RussiaVictor Brea University of Santiago de Compostela SpainDavid Brown HRL Laboratories United StatesTomasz Brozek PDF Solutions Inc. United StatesKai Brühne Ulm University GermanyEmanuela Buccafurri European Patent Office NetherlandsMatthias Bucher Technical University of Crete GreeceMatteo Buffolo University of Padova ItalyOlivier Bulteel Omnivision Technologies United StatesJoachim Burghartz Institute for Microelectronics Stuttgart GermanyGeoffrey Burr IBM Almaden Research Center United StatesGraeme Burt Lancaster University United KingdomAnton Burtsev SSTU RussiaErik Bury IMEC BelgiumNauman Butt Syed Babar Ali School of Science and

Engineering, LUMS PakistanCyril Buttay Laboratoire Ampère FranceJin Cai Taiwan Semiconductor Manufacturing Company TaiwanXue-Yuan Cai Institute of Microelectronics ChinaYimao Cai Peking University ChinaYong Cai Chinese Aademy of Sciences ChinaMario Caironi Istituto Italiano di Tecnologia ItalyJeffrey Calame Naval Research Laboratory United StatesAlessandro Calderoni Micron ItalyJason Campbell NIST United StatesGiuseppe Cantarella ETH Zürich SwitzerlandWei Cao University of California Santa Barbara United StatesYongge Cao Renmin University of China ChinaYu Cao HRL Laboratories United StatesFederica Cappelluti Politecnico di Torino ItalyAndrew Carlson Advanced Micro Devices United StatesBruce Carlsten Los Alamos National Laboratory United StatesHamilton Carrillo-Nunez ETH Zürich SwitzerlandRick Carter GlobalFoundries Dresden GermanyCristian Cassella Northeastern University United StatesAlberto Castellazzi University of Nottingham United KingdomStephen Cauffman CPI International, Inc. United StatesRobert Caverly Villanova University United StatesDidier Celi STMicroelectronics FranceAntonio Cerdeira CINVESTAV MexicoHo-Young Cha Hongik University KoreaKelson Chabak Air Force Research Laboratory United StatesMichael Chabinyc University of California Santa Barbara United StatesBhaswar Chakrabarti University of California Santa Barbara United StatesParthasarathi Chakrabarti Banaras Hindu University India



Shantanu Chakrabartty Washington University in St. Louis United StatesAnanda Chakraborty Indian Institute of Science IndiaPartha Chakraborty Georgia Institute of Technology United StatesMansun Chan Hong Kong University of Science and Technology Hong KongPaddy Chan University of Hong Kong Hong KongWinston Chan SRI International United StatesHengky Chandrahalim University of Michigan United StatesChao Chang Xi’an Jiaotong University ChinaMeng-Fan Chang National Tsing Hua University TaiwanMoon-Hwan Chang University of Maryland United StatesRuey-Dar Chang Chang Gung University TaiwanSheng-Po Chang National Cheng Kung University TaiwanSou-Chi Chang Georgia Institute of Technology United StatesTing-Chang Chang National Sun Yat-Sen University TaiwanWen Hsin Chang National Institute of Advanced Industrial

Science and Technology JapanWen-Teng Chang National University of Kaohsiung TaiwanYao-Feng Chang The University of Texas at Austin United StatesYao-Wen Chang Macronix International Co. Ltd. TaiwanKuei-Shu Chang-Liao National Tsing Hua University TaiwanSanatan Chattopadhyay Calcutta University IndiaAnkush Chaudhary Indian Institute of Technology Bombay IndiaChao Yang Chen IMEC BelgiumDenis Chen The Hong Kong University of Science and Technology Hong KongFred Chen Winbond Electronics Corp TaiwanFrederick Chen Industrial Technology Research Institute TaiwanFu-Bang Chen National Cheng-Kung University TaiwanHong-Yu Chen SanDisk Corporation United StatesJen-Sue Chen National Cheng Kung University TaiwanJiezhi Chen Shandong University ChinaJing Chen Peking University ChinaJingsheng Chen National University of Singapore SingaporeKuan-Neng Chen National Chiao Tung University TaiwanKun-Ming Chen National Applied Research Laboratories TaiwanLi-Yin Chen National Sun Yat-Sen University TaiwanMin-Cheng Chen National Nano Device Laboratories TaiwanPang-Shiu Chen MingShin University of Science & Technology TaiwanRongsheng Chen South China University of Technology ChinaShih-Hung Chen IMEC BelgiumShoushun Chen Nanyang Technological University SingaporeWei-Chen Chen Macronix International Co. Ltd. TaiwanWenchao Chen Zhejiang University ChinaWensuo Chen Chongqing University ChinaWen-Yi Chen Qualcomm Technologies Inc. United StatesYangyin Chen IMEC BelgiumYang-Yin Chen IMEC/SanDisk BelgiumYusheng Chen Industrial Technology Research Institute TaiwanZheng Chen GE Global Research Center United StatesBinjie Cheng Synopsys United KingdomKangguo Cheng IBM SRDC United StatesShunfeng Cheng University of Maryland United StatesWood-Hi Cheng National Sun Yat-Sen University TaiwanKarim Cherkaoui Tyndall National Institute, University College Cork IrelandWinston Chern Massachusetts Institute of Technology United StatesIgor Chernyavskiy Naval Research Laboratory United StatesChia Chin Chiang National Kaohsiung University of Applied Sciences TaiwanMeng-Hsueh Chiang National Cheng Kung University Taiwan



Te-Kuang Chiang National University of Kaohsiung TaiwanChao-Hsin Chien National Chiao Tung University TaiwanLiang-Chy Chien Kent State University United StatesNguyen Dang Chien National Chi Nan University TaiwanWei-Chih Chien Macronix International Co. Ltd. TaiwanAlessandro Chini Università di Modena e Reggio Emilia ItalyByung Jin Cho KAIST KoreaGyu-Hyeong Cho KAIST KoreaSeongjae Cho Gachon University KoreaSung Haeng Cho Electronics and Telecommunications

Research Institute KoreaWon-Ju Cho Kwangwoon University KoreaSri Harsha Choday Purdue University United StatesAnthony H.W. Choi The University of Hong Kong Hong KongEunmi Choi Ulsan National Institute of Science and Technology KoreaShinhyun Choi Massachusetts Institute of Technology United StatesW. H. Choi HGST United StatesWon Kook Choi Korea Institute of Science and Technology KoreaYoon Seuk Choi Choi Hanbat National University KoreaBhaskar Choubey University of Oxford United KingdomSauvik Chowdhury Monolith Semiconductor Inc. United StatesSrabanti Chowdhury University of California Davis United StatesY. Choyal DAV IndiaKwo-Ray Chu National Taiwan University TaiwanRongming Chu HRL Laboratories LLC United StatesTao Chu GlobalFoundries United StatesRicky Chuang National Cheng Kung Univesity TaiwanEduardo Chumbes Raytheon Integrated Defense Systems United StatesSungwoong Chung SK Hynix Inc KoreaNicola Ciocchini Politecnico di Milano ItalyCor Claeys IMEC BelgiumDavid Clark Raytheon Systems Limited United KingdomMartin Claus Technische Universität Dresden GermanyRaphael Clerc Univ. Jean Monnet & Institut d’Optique

Graduate School FranceSergiu Clima IMEC BelgiumKevin Coffey University of Central Florida United StatesRobert Coffie RLC Solutions United StatesJean-Pierre Colinge TSMC TaiwanNadine Collaert IMEC BelgiumDaniel Connelly University of California Berkeley United StatesClaudio Contiero ST Microelectronics ItalyAlan Cook Naval Research Laboratory United StatesSimon Cooke Naval Research Laboratory United StatesJames Cooper Purdue University United StatesGeoffrey Coram Analog Devices, Inc. United StatesSimone Corbellini Politecnico di Torino ItalyBrian Corbett Tyndall National Institute IrelandIgnacio Cortes Instituto de Microelectronica de Barcelona

IMB-CNM (CSIC) SpainAntonio Crespo Air Force Research Laboratory/RYDD United StatesAlessandro Cresti IMEP-LAHC FranceBogdan Cretu ENSICAEN FranceDana Cristea IMT-Bucharest RomaniaSorin Cristoloveanu INPG FranceJeroen Croon NXP Semiconductors NetherlandsFelice Crupi Universita della Calabria Italy



Giovanni Crupi University of Messina ItalyYong Cui Beihang University ChinaGilberto Curatola Infineon Technologies AustriaMariapompea Cutroneo Nuclear Physics Institute, ASCR Czech RepublicHaitao Dai Tianjin University ChinaQing Dai National Center for Nanoscience & Technology ChinaPiyush Dak SanDisk Corporation United StatesHassen Dakhlaoui University of Dammam Saudi ArabiaJohn Dallesasse University of Illinois Urbana-Champaign United StatesMichael Dammann Fraunhofer-IAF GermanySurya Shankar Dan Indian Institute of Technology Kharagpur IndiaMohamed Darwish MaxPower Semiconductor Inc United StatesBhaskar Das IIT Bombay Mumbai IndiaSaptarshi Das The Pennsylvania State University United StatesSubhashis Das Indian Institute of Technology Mandi IndiaAmitava DasGupta Indian Institute of Technology Madras IndiaNandita DasGupta Indian Institute of Technology Madras IndiaSandeepan DasGupta Sandia National Laboratories United StatesSudeb Dasgupta Indian Institute of Technology Roorkee IndiaGana Dash Sambalpur University IndiaShouvik Datta Indian Institute of Science Education Research Pune IndiaSubrata Datta Microwave Tube Research & Development Centre IndiaSuman Datta The Pennsylvania State University United StatesSupriyo Datta Purdue University United StatesJohn David The University of Sheffield United KingdomJon Davis L-3 Communications Electron Technologies United StatesJames Dayton Teraphysics Corp. United StatesLuca De Michielis Ecole Polytechnique Fédérale de Lausanne SwitzerlandFlorian De Roose IMEC BelgiumAbir De Sarkar Institute of Nanoscience and Technology, Mohali IndiaMichelly de Souza Centro Universitário da FEI BrazilWilliam Deal Northrop Grumman Corporation United StatesJohn DeBrosse IBM Research United StatesNicola Delmonte University of Parma ItalyJie (Thomas) Deng IBM United StatesShengling Deng ON Semiconductor United StatesWanling Deng College of Information Science and Technology ChinaYexin Deng Purdue University United StatesJaber Derakhshandeh Kheljani IMEC BelgiumIan Deviny Dynex Semiconductor Ltd United KingdomSagnik Dey Texas Instruments Inc. United StatesSarit Dhar Auburn University United StatesSiddhartha Dhar Samsung Electronics Co. Ltd KoreaJoonghoe Dho Kyungpook National University KoreaAldo Di Carlo University of Rome "Tor Vergata" ItalyNina Diakonova Montpellier University Hospital FrancePouya Dianat Northwestern University United StatesCarlos Diaz Taiwan Semiconductor Manufacturing Company TaiwanJeramy Dickerson Sandia National Laboratories United StatesSebastian Diebold Osaka University JapanCharalabos Dimitriadis Aristotle University of Thessaloniki GreeceSima Dimitrijev Giffith University AustraliaLili Ding Northwest Institute of Nuclear Technology ChinaShi-Jin Ding Fudan University ChinaDonald Disney GlobalFoundries Inc United StatesVladimir Djara IBM Research GmbH SwitzerlandPhilippe Dollfus Universite Paris Sud / CNRS France



Gary Dolny Fairchild Semiconductor United StatesSimona Donati-Guerrieri Politecnico di Torino ItalyChengyuan Dong SEIEE ChinaShurong Dong Zhejiang University ChinaFatma Donmezer Orta Dogu Teknik Universitesi TurkeyGerben Doornbos TSMC BelgiumRodrigo Doria Centro Universitário da FEI BrazilRichard Dorrance Intel Corp Hillsboro United StatesBrian Downey US Naval Reseach Lab United StatesMircea Dragoman IMT-Bucharest RomaniaFrancesco Driussi Universita Degli Studi Di Udine ItalyJiangfeng Du University of Electronic Science and

Technology of China ChinaPei-Ying Du Macronix International Co. Ltd. TaiwanYuchen Du Purdue University United StatesBaoxing Duan Xidian University ChinaVikas Dubey IMEC BelgiumErik Duerr Massachusetts Institute of Technology United StatesOlgierd Dumbrajs University of Latvia LatviaDeep Dumka Qorvo, Inc. United StatesArka Dutta Jadavpur University IndiaPradipta Dutta Jadavpur University IndiaCharvaka Duvvury ESD Consultant United StatesArun Dev Dhar Dwivedi Poornima University IndiaHeribert Eisele University of Leeds United KingdomMoshe Eizenberg Technion - Israel Institute Of Technology IsraelKhaled Elgaid University of Glasgow United KingdomNabil El-Hinnawy TowerJazz United StatesMagda El-Shenawee University of Arkansas Fayetteville United StatesKazuhiko Endo National Institute of Advanced Industrial

Science and Technology JapanGeert Eneman IMEC BelgiumRoman Engel-Herbert The Pennsylvania State University United StatesOlof Engstrom Chalmers University of Technology SwedenTobias Erlbacher Fraunhofer IISB GermanyMaxim Ershov Silicon Frontline Technology United StatesSukru Burc Eryilmaz Stanford University United StatesTakashi Eshita Fujitsu Semiconductor JapanMagali Estrada CINVESTAV-IPN MexicoJiajie Fan Hohai University ChinaMing-Long Fan National Chiao Tung University TaiwanXuejun Fan Lamar University United StatesGuojia Fang Wuhan University ChinaKun Fang Qualcomm Technologies Inc. United StatesZiwei Fang TSMC TaiwanAndrea Fantini IMEC BelgiumFarzan Farbiz Texas Instruments Inc. United StatesHossein Fariborzi King Abdullah University of Science and Technology Saudi ArabiaRobert Farrell University of California Santa Barbara United StatesXavier Federspiel ST Microelectronics FranceAlexey Fedotov Institute of Applied Physics, Russian

Acadamy of Sciences RussiaRandall Feenstra Carnegie Mellon University United StatesJonathan Felbinger Booz Allen Hamilton United StatesKevin Felch Communications and Power Industries United StatesLeonard Feldman Rutgers University United StatesGan Feng Kyoto University Japan



Hao Feng HKUST Hong KongJinjun Feng Beijing Vacuum Electronics Research Institute ChinaLinrun Feng University of Cambridge United KingdomLuis Fernandez Universidad de Zaragoza Facultad de Ciencias SpainTomas Fernandez University Of Cantabria SpainDavid Ferry Arizona State University United StatesIgor Filanovsky University of Alberta CanadaMatthew Filmer University of Notre Dame United StatesFranco Fiori Politecnico di Torino ItalyGianluca Fiori University of Pisa ItalyGerhard Fischer IHP GermanyInga Fischer Institute of Semiconductor Engineering GermanyMassimo Fischetti University of Texas Dallas United StatesDenis Flandre Université Catholique de Louvain BelgiumKarsten Fleck RWTH Aachen University GermanyDan Fleetwood Vanderbilt University United StatesCorrado Florian University of Bologna ItalyStephen Fonash Pennsylvania State University United StatesPatrick W. Fong The Hong Kong Polytechnic University Hong KongXuanyao Fong National University of Singapore SingaporeNelson J.G. Fonseca European Space Research and Technology Centre NetherlandsGuglielmo Fortunato CNR-IMM ItalyMarcos Franco Instituto de Estudos Avançados (IEAv) BrazilDavid Frank IBM T. J. Watson Research Center United StatesSebastien Fregonese CNRS FranceMartin Frey Synopsys Switzerland LLC SwitzerlandKlaus Fricke-Neuderth HS Fulda GermanyEby Friedman University of Rochester United StatesKai Fu Suzhou Institute of Nano-technology

and Nano-bionics ChinaErika Fuentes University of Texas Dallas United StatesHiroki Fujii Renesas Electronics Corporation JapanShosuke Fujii Toshiba Corporation JapanKohei Fujiwara Tohoku University JapanKenjiro Fukuda RIKEN JapanKoichi Fukuda Toshiba Corporation Semiconductor Company JapanTakafumi Fukushima Tohoku University JapanMamoru Furuta Kochi University of Technology JapanTanya Gachovska Solantro CanadaAnatoly Galdetskiy FSUE Istok, Moscow RussiaKevin Gallacher University of Glasgow United KingdomPhilippe Galy STmicroelectronics FranceFrancisco Gamiz Universidad de Granada SpainPeter Gammon University of Warwick United KingdomChong Leong Gan Broadcom Ltd Irvine United StatesKartik Ganapathi Intel Corporation United StatesUdayan Ganguly Indian Institute of Technology Bombay IndiaBin Gao Tsinghua University ChinaHaiyong Gao University of Connecticut United StatesLigang Gao Arizona State University United StatesQun Gao IBM United StatesWei Gao University of California Berkeley United StatesPablo Garcia-Linares Universidad Politécnica de Madrid SpainAntonio Garcia-Loureiro Universidad de Santiago de Compostela SpainFernando García-Redondo Technical University of Madrid, UPM SpainFrancisco Garcia-Sanchez Universidad Simon Bolivar VenezuelaDonald Gardner Intel Research United States



Ivan Garduno CINVESTAV-IPN MexicoLixin Ge Qualcomm Technologies Inc. United StatesAndrey Generalov Chalmers University of Technology SwedenDi Geng Kyung Hee University KoreaHubert George Intel Corporation United StatesSimone Gerardin Università di Padova ItalyJafar Ghazanfarian University of Zanjan IranAndrea Ghetti Micron Semiconductor Italia ItalyGérard Ghibaudo IMEP-LAHC FranceMatteo Ghittorelli Universita degli Studi di Brescia ItalyMahdi Gholizadeh Ferdowsi University of Mashhad IranMohamed Ghoneim King Abdullah University of Science and Technology Saudi ArabiaSanjay Ghosh Central Electronics Engineering Research Institute IndiaTushar Ghosh E2V Technologies United KingdomFilippo Giannazzo CNR-IMM ItalyMartin Giles Intel Corporation United StatesRenaud Gillon ON Semiconductor BelgiumBenito Gimeno University of Valencia SpainGino Giusi University of Messina ItalyUlrich Glaser Infineon Technologies AG GermanyMikhail Yu Glyavin Institute of Applied Physics, Russian

Academy of Sciences RussiaElena Gnani University of Bologna ItalyAntonio Gnudi Università di Bologna ItalyMichele Goano Politecnico di Torino ItalyAkira Goda Micron Technology United StatesPhilippe Godignon CNM SpainAndres Godoy University of Granada SpainDan Goebel Jet Propulsion Lab. United StatesVincent Goiffon ISAE, Université de Toulouse FranceQian Gong Shanghai Institute of Microsystem and

Information Technology ChinaXiao Gong NUS SingaporeTomas Gonzalez Universidad de Salamanca SpainKarla González University of Notre Dame United StatesDaniel Gonzalez-Iglesias University of Valencia SpainJung-Suk Goo GlobalFoundries United StatesStephen Goodnick Arizona State University United StatesMark Goorsky University of California Los Angeles United StatesKrzysztof Gorecki Gdynia Maritime University PolandPatrick Görrn Bergische Universitat Wuppertal GermanyHarald Gossner Intel Corporation GermanyTetsuya Goto Tohoku University JapanSamuel Graham Georgia Institute of Technology United StatesJan Grahn Chalmers University of Technology SwedenTibor Grasser Technical University of Vienna AustriaGerd Grau York University CanadaSalvatore Graziani University of Catania ItalyCraig Green Carbice Corporation United StatesGeoffrey Greening University of Michigan United StatesCurtis Grens BAE Systems United StatesA. A. Greshnov Russian Academy of Sciences RussiaAlessandro Grossi Laboratoire d’Electronique et de Technologies

de l’Information FranceTimothy Grotjohn Michigan State University United StatesMarius Grundmann Universitaet Leipzig GermanyDiego Guerra Arizona State University United States



Tayyar Gungor Mehmet Akif Ersoy Universitesi TurkeyJing Guo University of Florida United StatesJingwei Guo Yanshan University ChinaQingbo Guo University of Utah United StatesXiaojun Guo Shanghai Jiao Tong University ChinaYufeng Guo Nanjing University of Posts and Telecommunications ChinaChirag Gupta University Of California Santa Barbara United StatesDeepika Gupta Indian Institute of Technology Indore IndiaManish Gupta Indian Institute of Technology Indore IndiaMridula Gupta University of Delhi IndiaShashank Gupta Stanford University United StatesSumeet Gupta The Pennsylvania State University United StatesSumeet Kumar Gupta The Pennsylvania State University United StatesAlexandra Gurinovich Institute for Nuclear Problems BelarusDaniel Habersat U.S. Army Research Lab United StatesOliver Haeberlen Infineon Technologies AG AustriaZoubeida Hafdi Batna University AlgeriaKei Hagiwara NHK Science and Technology Research Laboratories JapanHerwig Hahn RWTH-Aachen University GermanyDouglas Hall University of Notre Dame United StatesSteve Hall The University of Liverpool United KingdomHamdy Hamid Zewail City of Science and Technology EgyptDedong Han Peking University ChinaGenquan Han Xidian University ChinaJin-Woo Han NASA Ames Research Center United StatesKi Jin Han IBM Research United StatesSang Youn Han Samsung Electronics Co. Ltd. KoreaShu-Jen Han IBM T. J. Watson Research Center United StatesXiufeng Han Institute of Physics Chinese Academy of Sciences ChinaDa-Ren Hang National Sun Yat-Sen University TaiwanAmir Hanna King Abdullah University of Science and Technology Saudi ArabiaHenri Happy Institut d Electronique et de Micro. du Nord FranceKenji Hara Hitachi, Ltd. JapanTakayuki Harada Tohoku University JapanMd. Tanvir Hasan American International University-Bangladesh BangladeshMohammad Hasanuzzaman GlobalFoundries Inc United StatesPouya Hashemi IBM Corporation United StatesMajeed Hayat University of New Mexico United StatesOliver Hayden Siemens AG GermanyPavel Hazdra Czech Technical University in Prague Czech RepublicGuoxing He Dong Hua University ChinaJr-Hau He King Abdullah University of Science and Technology Saudi ArabiaWenlong He University of Strathclyde United KingdomFrederik Heinz Synopsys Schweiz GmbH SwitzerlandGeert Hellings Katholieke Universiteit Leuven BelgiumHeino Henke Technische Universitaet Berlin GermanyJohannes Herrnsdorf Institute of Photonics United KingdomMasahiro Hikita Panasonic Corporation JapanChristopher Hinkle University of Texas Dallas United StatesToshiro Hiramoto University of Tokyo JapanYutaka Hirose Panasonic Corporation JapanChiaHua Ho National Nano Device Laboratories TaiwanYung-Han Ho Macronix International Co. Ltd. TaiwanKarl Hobart Naval Research Laboratory United StatesChris Hobbs SUNYPoly CNSE United StatesJean-Philippe Hogge EPFL SwitzerlandAlexander Hölke X-FAB Malaysia



Archie Holmes University of Virginia United StatesShuta Honda Kansai University JapanMinghwei Hong National Taiwan University TaiwanSung-Min Hong Gwangju Institute of Science and Technology KoreaYongtaek Hong Seoul National University KoreaTerence Hook IBM Corporation United StatesFabian Horst Technische Hochschule Mittelhessen GermanyFahad Hossain University of California Berkeley United StatesSeyed Ebrahim Hosseini Ferdowsi University of Mashhad IranTuo-Hung Hou National Chiao Tung University TaiwanRobert Howell Northrop Grumman Electronic Systems United StatesPhil Hower Texas Instruments Inc. United States

Hraziia Institut Superieur d’Electronique de Paris FranceYi-Hsuan Hsiao Macronix International Co. Ltd. TaiwanChih-Chieh Hsu National Yunlin University of Science and Technology TaiwanTzu-Hsuan(Bruce)

Hsu Macronix International Co. Ltd. Taiwan

Wei-Chou Hsu National Cheng-Kung University TaiwanWilliam Hsu The University of Texas at Austin United StatesChengqing Hu The University of Texas at Austin United StatesHsin-Hui Hu National Taipei University of Technology TaiwanJie Hu Massachusetts Institute of Technology United StatesShengdong Hu Chongqing University ChinaVita Pi-Ho Hu National Central University TaiwanZongyang Hu Cornell University United StatesMengyuan Hua Hong Kong University of Science and Technology Hong KongBohr-Ran Huang National Taiwan University of Science

and Technology TaiwanChih-Fang Huang National Tsing Hua University TaiwanHaimeng Huang State Key Laboratory of Electronic Thin

Films and Integrated Devices ChinaJianJang Huang National Taiwan University TaiwanJunkai Huang Jinan University ChinaKeJie Huang SUTD SingaporePeng Huang Institute of Microelectronics ChinaQianqian Huang Peking University ChinaQing-An Huang Southeast University ChinaSen Huang Institute of Microelectronics, Chinese

Academy of Sciences ChinaXiucheng Huang Virginia Polytechnic Institute and State University United StatesRaymond Hueting University of Twente NetherlandsK. Hui Pusan National University KoreaRon Hui The University of Hong Kong Hong KongBrett Hull Cree, Inc. United StatesIvo Hummelgen Universidade Federal do Parana BrazilJae Hur Korea Advanced Institute of Science and Technology KoreaAftab Hussain King Abdullah University of Science and Technology Saudi ArabiaMuhammad Hussain King Abdullah University OF Science and Technology Saudi ArabiaZoltan Huszka Ams AG HungaryTrong Huynh-Bao IMEC BelgiumCheol Seong Hwang Seoul National University KoreaChi-Sun Hwang ETRI KoreaDokyung Hwang Korea Institute of Science and Technology KoreaHyunsang Hwang Pohang University of Science and Technology KoreaJames C. M. Hwang Lehigh University United StatesJenn-Gwo Hwu National Taiwan University TaiwanMario Iannazzo UPC BarcelonaTech Spain



Toshitaka Idehara University of Fukui JapanLi Hong Idris Lim University of Glasgow Singapore SingaporeDaniele Ielmini Politecnico di Milano ItalyPetar Igic Swansea University United KingdomHesameddin Ilatikhameneh Purdue University United StatesStefan Illy Karlsruhe Institute of Technology GermanyHyunsik Im Dongguk University KoreaKi-Sik Im Kyungpook National University KoreaMohamed Imam Infineon Technologies Americas Corp United StatesSven Ingebrandt University of Applied Sciences Kaiserslautern GermanyTomoaki Inokuchi Toshiba Corporation JapanZisis Ioannidis Karlsruher Institut fur Technologie - Campus Nord GermanyAdrian Mihai Ionescu Swiss Federal Institute of Technology (EPFL) SwitzerlandAndrea Irace University of Naples - “Federico II” ItalyToshifumi Irisawa Toshiba Corporation JapanKoichi Ishida Technische Universitaet Dresden GermanyAhmad Islam Air Force Research Laboratory Materials

and Manufacturing Directorate United StatesMuhammad Ismail Bahauddin Zakariya University PakistanKarine Isoird LAAS-CNRS FranceFerdinando Iucolano STMicroelectronics SRL Catania ItalyR. Lawrence Ives Calabazas Creek Research Inc United StatesSubramanian Iyer University of California Los Angeles United StatesArne Jacob Technische Universität Hamburg-Harburg GermanyShafat Jahangir University of Michigan United StatesAnkit Jain Purdue University United StatesPradeep Jain Institute of Technology IndiaSeyed Ehsan Jamali Mahabadi University of Maryland United StatesChia Jan Intel Corporation United StatesDavid Janes Purdue University United StatesJa-Soon Jang Yeungnam University KoreaSheng-Lyang Jang National Taiwan University of Science

and Technology TaiwanYong Ho Jang LG Display KoreaSudheer Jawla Massachusetts Institute of Technology United StatesFarzan Jazaeri Swiss Federal Institute of Technology (EPFL) SwitzerlandJohn Jelonnek Karlsruhe Institute of Technology GermanyDae-Eun Jeong Samsung Electronics Co. Ltd. KoreaGregg Jessen AFRL United StatesRitesh Jhaveri Intel Corporation United StatesZhigang Ji Liverpool John Moores University United KingdomHao Jiang Center for Solid-State Light System ChinaHuaping Jiang Dynex Semiconductor Ltd United KingdomQimeng Jiang Hong Kong University of Science and Technology Hong KongWei Jiang University of Electronic Science and Technology

of China ChinaXudong Jiang Princeton Lightwave United StatesZhengping Jiang Purdue University United StatesZizhen Jiang Stanford University United StatesDavid Jiménez Universitat Autònoma de Barcelona SpainJuan Jimenez Tejada Universidad de Granada SpainJianbo Jin Karlsruhe Institute of Technology GermanySung Hun Jin Incheon National University KoreaSatyabrata Jit IIT(BHU) IndiaJungwoo Joh Texas Instruments Inc. United StatesJeffrey Johnson GlobalFoundries United StatesLalit Joshi CEERI, Microwave Tubes Division Pilani, India India



Manoj Joshi GlobalFoundries United StatesKazukiyo Joshin Fujitsu Laboratories JapanColin Joye Naval Research Laboratory United StatesSeong-Ook Jung Yonsei University KoreaChristoph Jungemann RWTH Aachen University GermanyTetsu Kachi Nagoya Daigaku JapanWataru Kada Gunma Daigaku Rikogakubu Daigakuin Riko Gakufu JapanTakao Kageyama Kyushu Institute of Technology JapanWalter Kaiser University of São Paulo BrazilMatti Kaisti University of Turku FinlandHiroshi Kajiyama Hiroshima University JapanKuniyuki Kakushima Tokyo Institute of Technology JapanSumit Kale PDPM IIITDM Jabalpur IndiaYoshinari Kamakura Osaka University JapanYukihiro Kaneko Panasonic Corporation JapanIn Man Kang Kyungpook National University KoreaJiahao Kang University of California Santa Barbara United StatesJinfeng Kang Peking University ChinaMinji Kang Gwangju Institute of Science and Technology KoreaMyounggon Kang Korea National University of Transportation KoreaSeung Kang Qualcomm Technologies Inc. United StatesWang Kang Beihang University ChinaSayan Kanungo Indian Institute of Engineering Science

and Technology IndiaKuo-Hsing Kao Nation Cheng Kung University TaiwanRobert Kaplar Sandia National Labs United StatesMuhammed A. Karim University of California Berkeley United StatesAnupam Karmakar University of Calcutta IndiaIlya Karpov Intel Corporation United StatesSergey Karpov STR Soft RussiaNaveen Karumuri Indian Institute of Technology Madras IndiaWalter Kasparek University of Stuttgart GermanyGaurav Kaushal Yonsei University KoreaBrajesh Kaushik Indian Institute of Technology Roorkee IndiaJanesh Kaushik Solid State Physics Laboratory IndiaOmid Kavehei RMIT University AustraliaYusuke Kawaguchi Toshiba Corporation JapanTakamasa Kawanago Tokyo Institute of Technology JapanThomas Kazior Raytheon RF Components United StatesShaoying Ke Xiamen University ChinaAndrew Kent New York University United StatesAndreas Kerber GlobalFoundries Inc United StatesVishal Kesari Microwave Tube Research & Development Centre IndiaAndrew Ketterson Qorvo, Inc. United StatesAli Khakifirooz Intel United StatesSameh Khalil Infineon Technologies United StatesAsif Khan University of California Berkeley United StatesFaraz Khan University of California Los Angeles United StatesMohd. Shahid Khan Jamia Milia Islamia IndiaSourabh Khandelwal Macquarie University Faculty of Science AustraliaMohammad Khayer Intel Corporation United StatesDongyoon Khim Imperial College London United KingdomEduard Khutoryan Fukui Daigaku JapanPiran Kidambi Massachusetts Institute of Technology United StatesYoshiaki Kikuchi IMEC BelgiumValeriya Kilchytska Catholic University of Louvain BelgiumBo Sung Kim Korea University Korea



Chang-Hyun Kim Gwangju Institute of Science and Technology KoreaDae Hwan Kim Kookmin University KoreaDae Hyun Kim Washington State University United StatesHak-Rin Kim Kyungpook National University KoreaHyun Jae Kim Yonsei University KoreaHyun-Suk Kim Chungnam National University KoreaKihyun Kim POSTECH KoreaKwan Kim LG Display KoreaKyung Rok Kim Ulsan National Institute of Science and Technology KoreaMyunggil Kim Chung-Ang University KoreaSangBum Kim IBM T. J. Watson Research Center United StatesSangsig Kim Korea University KoreaSangwan Kim Ajou University KoreaSeongsin Kim The University of Alabama United StatesSeyoung Kim IBM United StatesSoYoung Kim Sung Kyun Kwan University KoreaSungho Kim KAIST KoreaSungwon Kim Intel United StatesTae-iL Kim Sungkyunkwan University KoreaTony Kim Nanyang Technological University SingaporeWanki Kim IBM T. J. Watson Research Center United StatesTsunenobu Kimoto Kyoto University JapanMutsumi Kimura Ryukoku University JapanYa-Chin King National Tsing Hwa University TaiwanMladen Kis GSI Helmholtzzentrum fur

Schwerionenforschung GmbH GermanyTatsuya Kishi Toshiba Corporation JapanIsik Kizilyalli Avogy Inc United StatesAlexander Kloes Technische Hochschule Mittelhessen GermanyWolfram Knapp Otto-von-Guericke-Universität Magdeburg GermanyIrena Knezevic University of Wisconsin-Madison United StatesLars Knoll ABB Corporate Research Center SwitzerlandMasaharu Kobayashi University of Tokyo JapanNorbert Koch Humboldt-Universitat zu Berlin GermanyTomonori Koda Yamagata University JapanAndrew Koehler U.S. Naval Research Laboratory United StatesShao-Ming Koh Taiwan Semiconductor Manufacturing Company Ltd TaiwanYoshiyuki Kondo Toshiba Corporation JapanJens-Peter Konrath Infineon Technologies Austria AG AustriaAndrei Konstantinov Fairchild Semiconductor SwedenHans Koops HaWilKo GmbH GermanyArnost Kopta ABB Schweiz AG SwitzerlandMartin Kordesch Ohio University United StatesDemet Korucu Gazi University TurkeyHans Kosina Technical University of Vienna AustriaRoza Kotlyar Intel Corporation United StatesAnil Kottantharayil Indian Institute of Technology Bombay IndiaMatroni Koutsoureli National and Kapodistrian University

of Athens School of Sciences GreeceKiran Kumar Kovi Argonne National Laboratory United StatesRichard Kowalczyk L-3 Communications United StatesUlrike Kraft Stanford University United StatesTomasz Krajewski Institute of Physics PAS PolandAbhinav Kranti Indian Institute of Technology Indore IndiaKen Kreischer Northrop Grumman Corporation United StatesSriram Krishnamoorthy The Ohio State University United StatesViktor Krozer Goethe University of Frankfurt am Main Germany



NiKola Krstajic University of Edinburgh United KingdomChaitanya Kshirsagar Peregrine Semiconductor Corp United StatesShaw-Hung Ku Macronix International Co. Ltd. TaiwanMartin Kuball University of Bristol United KingdomTillmann Kubis Purdue University United StatesToshiharu Kubo Nagoya Insitute of Technology JapanKelin Kuhn Cornell University United StatesAnil Kumar University of Tokyo JapanManoj Kumar University Institute of Engineering & Technology IndiaVachan Kumar Georgia Institute of Technology United StatesHiroshi Kumigashira Tohoku University JapanAtanu Kundu Heritage Institute of Technology IndiaHao-Chung Kuo National Chiao Tung University TaiwanJames Kuo National Taiwan University TaiwanAlexander Kurayev Byelarusian State University of Informatics

and Radioelectronics BelarusKazunari Kurita Kabushiki Kaisha SUMCO JapanRihito Kuroda Tohoku University JapanAlex Kutana Rice University United StatesJán Kuzmík Slovak Academy of Sciences SlovakiaMasaaki Kuzuhara University of Fukui JapanDuygu Kuzum University of California San Diego United StatesShahar Kvatinsky Technion - Israel Institute Of Technology IsraelJeonghun Kwak University of Seoul KoreaJoon Seop Kwak Sunchon National University KoreaKai Kwok Skyworks Solutions, Inc. United StatesHyuck-In Kwon Chung-Ang University KoreaJang-Yeon Kwon Yonsei University KoreaOh-Kyong Kwon Hanyang University KoreaYongwoo Kwon Hongik University KoreaGiuseppe La Rosa IBM Microelectronics Division United StatesCamilla La Torre RWTH Aachen University GermanyNathalie Labat University of Bordeaux FranceChao Sung Lai Chang Gung University TaiwanChun-Feng Lai Feng Chia University TaiwanSheng-Chih Lai TSMC TaiwanWei-Chih Lai National Cheng Kung University TaiwanChristophe Lallement Université de Strasbourg, Parc d’innovation FranceKai-Tak Lam Taiwan Semiconductor Manufacturing Company Ltd TaiwanHao Lan Institute of Microelectronics ChinaLinfeng Lan South China University of Technology ChinaXing Lan Northrop Grumman Aerospace Systems United StatesLuigia Lanni KTH-Royal Institute of Technology SwedenMario Lanza Soochow University ChinaLuca Larcher Università di Modena e Reggio Emilia ItalyStefano Larentis Politecnico di Milano ItalyOlivier Latry University of Rouen FranceDaniel Lau The Hong Kong Polytechnic University Hong KongKei May Lau Hong Kong University of Science and Technology Hong KongYue Ying Lau University of Michigan United StatesMan Kay Law University of Macau MacaoWesley Lawson University of Maryland College Park United StatesDimitri Lederer Universite Catholique de Louvain BelgiumByoung Hun Lee Gwangju Institute of Science and Technology KoreaCheol Jin Lee Korea University KoreaChing-Sung Lee Feng Chia University TaiwanChing-Ting Lee National Cheng Kung University Taiwan



ChoongHyun Lee International Business Machines Corp United StatesDai-Ying Lee Macronix International Co. Ltd. TaiwanDong Seup Lee Texas Instruments Inc. United StatesFeng-Ming Lee Macronix International Co. Ltd. TaiwanHee Chul Lee Korea Advanced Institute of Science and Technology KoreaHojin Lee Soongsil University KoreaHo-Jun Lee Pusan National University KoreaHyunjae Lee University of Seoul KoreaJack Lee The University of Texas at Austin United StatesJae-Hyun Lee Hanbat National University KoreaJae-Kyu Lee Samsung Electronics Co. Ltd. KoreaJeong-Hwan Lee Inha University KoreaJiyoul Lee Pukyong National University KoreaJonghee Lee Electronics and Telecommunications

Research Institute KoreaJoshua Lee City University of Hong Kong Hong KongJune-Yub Lee Sungkyunkwan University KoreaJung Hyuk Lee Samsung Electronics Co. Ltd. KoreaJung-Hee Lee Kyungpook National University KoreaKangwook Lee Tohoku University JapanKeon Jae Lee KAIST KoreaKyu-Tae Lee University of Iliinois Urbana-Champaign United StatesMing-Hsiu Lee Macronix International Co. Ltd. TaiwanSeung Hee Lee Chunbuk National University KoreaSeung-Woo Lee Kyung Hee University KoreaSiwoo Lee Micron Technology United StatesSungsik Lee Pusan National University KoreaVincent Lee Columbia University United StatesYong Wook Lee Pukyong National University KoreaYung-Huei Lee Numonyx United StatesStéphane Lefebvre SATIE FranceMax Lemme University of Siegen GermanyPawel Lenarczyk Eidgenossische Technische Hochschule Zurich SwitzerlandAndrej Lenert University of Michigan United StatesTrupti Lenka National Institute of Technology Silchar IndiaFrancois Leonard Sandia National Laboratories United StatesDaniele Leonelli Samsung KoreaDaniel Leon-Salas Purdue University United StatesRosa Letizia Lancaster University United KingdomChung Ming Leung Virginia Tech United StatesGreg Leung University at California Los Angeles United StatesKalle Levon New York University United StatesChi-Kang Li National Taiwan University TaiwanChun-Hao Li Jilin University ChinaCong Li Xidian University ChinaDing Li Peking University ChinaGang Li Clemson University United StatesHaitong Li Stanford University United StatesHaoyu Li Micron Technology, Inc United StatesHongjian Li University of California Santa Barbara United StatesHonglang Li Institute of Acoustics, Chinese Academy of Sciences ChinaJiantong Li Royal Institute of Technology SwedenJunhong Li Univ. of Electronic Science and Technology of China ChinaJunjun Li IBM United StatesLing Li Institute of Microelectronics ChinaMing Li Peking University ChinaMing Hua Li Data Storage Institute Singapore



Mingda Li Cornell University United StatesMing-Huang Li NTHU TaiwanMingyang Li Stanford University United StatesSheng-Shian Li National Tsing Hua University TaiwanWei Li Peking University ChinaWenjun Li GlobalFoundries United StatesWilson Li University of California Los Angeles United StatesXiaojin Li East China Normal University ChinaXifeng Li Shanghai University ChinaXinyi Li Tsinghua University ChinaY. Li Business and Vocational College of Hainan ChinaYiming Li National Chiao Tung University TaiwanZehong Li University of Electronic Science and

Technology of China ChinaZhaoji Li University of Electronic Science and

Technology of China ChinaChuaxin Lian MACOM United StatesGengchiau Liang National University of Singapore SingaporeQingqing Liang Qualcomm Technologies Inc. United StatesRenrong Liang Tsinghua University ChinaYung C. Liang National University of Singapore SingaporeBolin Liao California Institute of Technology United StatesCongwei Liao Peking University, Shenzhen Graduate School ChinaLei Liao Wuhan University ChinaKonstantin Likharev Stony Brook University United StatesHanjin Lim Samsung Electronics Co. Ltd. KoreaJang-Kwon Lim Acreo Swedish ICT SwedenSung Kyu Lim Georgia Institute of Technology United StatesFrancois Lime Universitat Rovira i Virgili SpainErnesto Limiti Università di Roma Tor Vergata ItalyBihong Lin Huaqiao University ChinaCheng-Li Lin Feng Chia University TaiwanChih-Lung Lin National Cheng Kung University TaiwanChrong Jung Lin National Tsing Hua University TaiwanChun-Yu Lin National Taiwan Normal University TaiwanJianqiang Lin Argonne National Laboratory United StatesTai Yuan Lin National Taiwan Ocean University TaiwanXinnan Lin Peking University Shenzhen Graduate School ChinaYen-Fu Lin National Chung Hsing University TaiwanYen-Kai Lin University of California Berkeley United StatesYin-yin Lin Fudan University ChinaYu-Hsuan Lin National Chiao Tung University TaiwanYu-Ming Lin IBM T. J. Watson Research Center United StatesYu-Shyan Lin National Dong Hwa University TaiwanBernabe Linares-Barranco CSIC SpainErik Lind Lund University SwedenJohn Little US Army Research Laboratory United StatesBo Liu University of Florida United StatesChang Liu Wuhan University ChinaChee Wee Liu National Taiwan University TaiwanChuan Liu Sun Yat-sen University ChinaDiwei Liu University of Electronic Science and

Technology of China ChinaFei Liu The University of Hong Kong Hong KongFeilong Liu University of Minnesota United StatesGang Liu Texas Instruments Inc. United StatesHuichu Liu Intel Corporation United States



Jen-Chieh Liu National Chiao Tung University TaiwanLei Liu Northwestern University United StatesMing Liu Institute of Microelectronics, Chinese

Academy of Sciences ChinaPo-Tsun Liu National Chiao Tung University TaiwanQi Liu Institute of Microelectronics, Chinese

Academy of Sciences ChinaQizhi Liu GlobalFoundries Inc United StatesRuonan Liu University of California Berkeley United StatesWen-Chau Liu National Cheng Kung University TaiwanWenjiang Liu Shanghai Jiao Tong University ChinaXiaoyan Liu Peking University ChinaYi Liu State Key Laboratory of Advanced Electromagnetic

Engineering and Technology ChinaYue Liu University of Minnesota United StatesYumeng Liu University of California Berkeley United StatesZhihong Liu Singapore-MIT Alliance for Research and Technology SingaporeZhiqiang Liu Chinese Academy of Sciences ChinaDaniel Lizzit University of Udine ItalyJames Lloyd SUNY Polytechnic Institute United StatesRoger Lo Macronix International Co. Ltd. TaiwanSajad Loan Jamia Millia Islamia IndiaSalvatore Lombardo CNR-IMM ItalyShibing Long Chinese Academy of Sciences ChinaKa-Hong Loo The Hong Kong Polytechnic University Hong KongDaniel Lopes Fundação PATRIA BrazilJuan Lopez-Villanueva Universidad de Granada SpainNeophytos Lophitis Coventry University United KingdomPeter Losee General Electric Global Research United StatesWen-Shiung Lour National Taiwan Ocean University TaiwanTony Low University of Minnesota United StatesBin Lu Cambridge Electronics Inc United StatesChien-Yao Lu JDSU United StatesDarsen Lu University of California Berkeley United StatesGuanghao Lu Xi’an Jiaotong University ChinaHai Lu Nanjing University ChinaJiangang Lu National Engineering Lab of TFT-LCD

Materials and Technologies ChinaJianguo Lu Zhejiang University ChinaYeqing Lu Synopsys Inc. United StatesFrieder Lucklum Universitat Bremen Fachbereich GermanyNeville C. Luhmann, Jr. University of California Davis United StatesMathieu Luisier ETH Zürich SwitzerlandMark Lundstrom Purdue University United StatesJiexin Luo State Key Laboratory of Functional Materials for

Informatics, Chinese Academy of Sciences ChinaJirun Luo Institute of Electronics ChinaJun Luo Royal Institute of Technology SwedenXiao Rong Luo University of Electronic Science and

Technology of China ChinaBjörn Lüssem Kent State University United StatesJosef Lutz Chemnitz University of Technology GermanyHangbing LV Institute of Microelectronics, Chinese

Academy of Sciences ChinaChenyue Ma Institute of Microelectronics ChinaJames Ma ProPlus Design Solutions Inc United StatesJigang Ma Liverpool John Moores University United Kingdom



T. P. Ma Yale University United StatesWilliamCheng-Yu

Ma National Sun Yat-Sen University Taiwan

Zhenqiang (Jack) Ma University of Wisconsin-Madison United StatesKartikeyan Machavaram Indian Institute of Technology Roorkee IndiaJaya Madan Delhi Technological University IndiaDivya Madapusi Srinivas

PrasadGeorgia Institute of Technology United States

Wan Joo Maeng University of Wisconsin-Madison United StatesKoichi Maezawa University of Toyama JapanPaolo Magnone University of Padova ItalySantanu Mahapatra Indian Institute of Science IndiaMasoud Mahjouri-Samani Oak Ridge National Laboratory United StatesSiddheswar Maikap Chang Gung University TaiwanKerry Maize Purdue University United StatesBogdan Majkusiak Warsaw University of Technology PolandKausik Majumdar Indian Institute of Science IndiaPetr Makhalov Institute of Applied Physics, Russian

Academy of Sciences RussiaAdam Makosiej CEA-LETI FranceSergej Makovejev Université Catholique de Louvain BelgiumRoger Malik First Solar United StatesPawel Malinowski IMEC BelgiumAbhijit Mallik University of Calcutta IndiaVolodymyr Malyutenko Lashkaryov Institute of Semiconductor Physics UkraineSanjeev Manhas Indian Institute of Technology Roorkee IndiaOlivier Marcelot ISAE FranceLuca Maresca University of Napoli "Federico II" ItalyEnrique G. Marin Universidad de Granada SpainStephan Marini University of Alicante SpainOgnian Marinov McMaster University CanadaKoen Martens IMEC BelgiumPatrick Martin CEA-LETI FranceAntonio Martinez Swansea University United KingdomSebastien Martinie CEA-LETI FranceJoao Antonio Martino Escola Politecnica da Universidade de Sao Paulo BrazilRodrigo Martins New University of Lisbon PortugalTakao Marukame Toshiba Corporation JapanWitek Maszara Advanced Micro Devices Inc. United StatesJavier Mateos Universidad de Salamanca SpainMallory Mativenga Kyung Hee University KoreaJun-ichi Matsuda Gunma University JapanTakashi Matsukawa National Institute of Advanced Industrial

Science and Technology JapanChristian Matthus Friedrich-Alexander-Universitat Erlangen-Nurnberg GermanyDaniel Mauch Texas Tech University United StatesSerguei I. Maximenko Global Defense Technology and Systems, Inc., United StatesFréderic Mayer E2V Technologies FranceColin McAndrew NXP Semiconductors NV United StatesWilliam McMahon GlobalFoundries United StatesTy McNutt Arkansas Power Electronics International, Inc. United StatesJoe McPherson Texas Instruments Inc. United StatesFarid Medjdoub I.E.M.N - CSAM FranceMahsa Mehrad Semnan University IranSaumitra Mehrotra Maxim Integrated United StatesGerry Mei Northrop Grumman Corporation United StatesElvedin Memisevic Lund University Sweden



Gaudenzio Meneghesso Università di Padova ItalyMatteo Meneghini Università di Padova ItalyWilliam Menninger L-3 Communications Electron Technologies, Inc. United StatesRoberto Menozzi University of Parma ItalyStephan Menzel Forschungszentrum Jülich GmbH GermanyMarkus Mergens QPX GmbH GermanyMichel Mermoux LEPMI-CNRS FranceRobert Mertens NXP Semiconductors United StatesHalim Miah University of Utah United StatesXin Miao IBM United StatesMarek Mierzwinski Keysight Technologies United StatesShinji Migita National Institute of Advanced Industrial

Science and Technology JapanAndrei Mihaila ABB Switzerland Ltd SwitzerlandSlobodan Mijalkovic Silvaco Europe United KingdomLiviu Militaru INSA Lyon FranceValerio Milo Politecnico di Milano ItalyJie Min University of California San Diego United StatesKyeong-Sik Min Kookmin University KoreaRenato Minamisawa Fachhochschule Nordwestschweiz Hochschule

fur Technik SwitzerlandTakeo Minari MANA-NIMS JapanTadaharu Minato Mitsubishi Electric Corporation JapanMauro Mineo E2V Technologies United KingdomSergey Mishakin Institute of Applied Physics, Russian

Acadamy of Sciences RussiaNeeraj Misra IET LUCKNO IndiaYuichiro Mitani Toshiba Corporation JapanJérôme Mitard IMEC BelgiumYasuhiro Miyake Keysight Technologies Japan JapanYasuyuki Miyamoto Tokyo Institute of Technology JapanHidenori Miyoshi Tokyo Electron Miyagi Ltd. JapanMasanobu Mizusaki Sharp Corp JapanJay Mody GlobalFoundries United StatesPeter Moens ON Semiconductor BelgiumSaqib Mohamad HKUST Hong KongNihar Mohapatra Indian Institute of Technology Gandhinagar IndiaAlireza Mojab University of Illinois Chicago United StatesOana Moldovan Universitat Rovira i Virgili SpainAlessandro Molle CNR-IMM ItalyUdit Monga Samsung Electronics Hwaseong-Si KoreaSaurabh Mookerjea Micron Technology Inc. United StatesDong-Il Moon KAIST KoreaJeong-sun Moon HRL Laboratories LLC United StatesYi-Shien Mor TSMC TaiwanPascal Mora Aledia FranceFarshad Moradi Aarhus University DenmarkDavid Moran University of Glasgow United KingdomKatrina Morgan University of Southampton United KingdomTakahiro Mori National Institute of Advanced Industrial

Science and Technology JapanDallas Morisette Purdue University United StatesVictor Moroz Synopsys Inc. United StatesDespina Moschou University of Bath United KingdomSteven Moss The Aerospace Corporation United StatesClaudio Motta University of São Paulo BrazilXuehao Mou The University of Texas at Austin United States



Hema Movva University of Texas Austin United StatesChhandak Mukherjee University of Bordeaux FranceSaibal Mukhopadhyay Georgia Institute of Technology United StatesRyuichi Murai Osaka University JapanBhaskaran Muralidharan IIT Bombay IndiaAndrey Muraviev Rensselaer Polytechnic Institute United StatesOrazio Muscato University of Catania ItalyYuri Musienko CERN SwitzerlandAzad Naeemi Georgia Institute of Technology United StatesMasanori Nagase National Institute of Advanced Industrial

Science and Technology JapanMohammad Najmzadeh Swiss Federal Institute of Technology (EPFL) SwitzerlandAkira Nakajima National Institute of Advanced Industrial

Science and Technology JapanTakashi Nakamura Japan Display Inc United StatesGiljoo Nam KAIST KoreaHyohyun Nam University of Seoul KoreaHyoungsik Nam Kyung Hee University KoreaBasanta Nameirakpam Manipur University IndiaTakuma Nanjo Mitsubishi Electric Corporation JapanEmilio Nanni Stanford University United StatesLis Nanver University of Twente NetherlandsRakhi Narang University of Delhi, South Campus IndiaSudarshan Narayanan GlobalFoundries Inc United StatesFederico Nardi SanDisk Corporation United StatesJoanna Nassar King Abdullah University of Science and Technology Saudi ArabiaDario Natali Politecnico di Milano ItalyDigbijoy Nath Indian Institute of Science IndiaDondee Navarro Hiroshima University JapanGabriele Navarro CEA-LETI MINATEC FranceMuhammad Nawaz ABB SwedenRobert Nawrocki University of Tokyo JapanKaushik Nayak IIT Hyderabad IndiaAlexiei Nazarov Institute of Semiconductor Physics UkraineChristoph Nebel Fraunhofer Institute IAF GermanyJeff Neilson SLAC National Accelerator Laboratory United StatesYael Nemirovsky Technion - Israel Institute Of Technology IsraelNeophytos Neophytou Technical University of Vienna AustriaPhilip Neudeck NASA United StatesDaniel Neumaier AMO GmbH GermanyAnnie Ng The Hong Kong Polytechnic University ChinaGeok Ing Ng Nanyang Technological University SingaporeTse Nga Ng University of California San Diego United StatesKai Ni Vanderbilt University United StatesFiore Pasquale Nicoletta Università della Calabria ItalyKoji Nii Renesas Technology Corporation JapanTomonori Nishimura The University of Tokyo JapanSimiao Niu Stanford University United StatesYong-Young Noh Dongguk University KoreaKazuki Nomoto University of Notre Dame United StatesKenji Nomura Tokyo Institute of Technology JapanGregory Nusinovich University of Maryland United StatesNixon O Teledyne DALSA CanadaMichael Oakley Georgia Institute of Technology United StatesT. N. Oder Youngstown State University United StatesAndreas Offenhaeusser Forschungszentrum Jülich GmbH GermanyTsuneo Ogura Toshiba Cooperation Japan



Hanju Oh Georgia Institute of Technology United StatesJoon Hak Oh Pohang University of Science and Technology KoreaSaeroonter Oh Hanyang University KoreaTatsuya Ohguro Toshiba Corporation JapanPhil Oldiges IBM United StatesJorgen Olsson Uppsala University SwedenKazuo Ono Central Research Laboratory, Hitachi. Ltd. JapanGregory Onushkin Philips Lighting NetherlandsEmanuele Orgiu Institut National de la Recherche Scientifique Centre

energie Materiaux Telecommunications CanadaXavier Oriols Universidad Autonoma de Barcelona SpainKenji Orita Panasonic Corporation JapanAdelmo Ortiz-Conde Universidad Simon Bolivar VenezuelaClemens Ostermaier Infineon Technologies AustriaHiroyuki Ota National Institute of Advanced Industrial

Science and Technology JapanKensuke Ota Toshiba Corporation JapanTzu-Min Ou University of Colorado-Boulder United StatesZahir Ouennoughi Universite Ferhat Abbas AlgeriaÜmit Özgür Virginia Commonwealth University United StatesJose Luis Padilla Universidad de Granada SpainAndrea Padovani MDLab s.r.l. ItalyRoberto Pagano CNR-IMM ItalyGirish Pahwa IIT Kanpur IndiaArdechir Pakfar GlobalFoundries GermanyMarco Pala Centre de Nanosciences et Nanotechnologies FranceTomás Palacios Massachusetts Institute of Technology United StatesPierpaolo Palestri Universita Degli Studi Di Udine ItalyEmiliano Pallecchi University of Lille FranceDev Palmer Defense Advanced Research Projects Agency United StatesSerguei Palto Russian Academy of Sciences RussiaAndrew Pan University of California Los Angeles United StatesFeng Pan Tsinghua University ChinaTung-Ming Pan Chang Gung University TaiwanRahul Pandey The Pennsylvania State University United StatesRajan Pandey IBM India Private Limited IndiaSantosh Pandey Iowa State University United StatesSoumya Pandit University of Calcutta IndiaClaudio Paoloni Lancaster University United KingdomGiovanni Paolucci Micron Technology Inc. ItalyGeorge Papaioannou University of Athens GreeceDavid Parent San Jose State University United StatesGun-Sik Park Seoul National University KoreaJea-Gun Park Hanyang University KoreaJinsub Park Hanyang University KoreaJong Tae Park University of Incheon KoreaJongwon Park Korea University of Technology & Education KoreaJung-Dong Park Dongguk University KoreaKeeChan Park Konkuk University KoreaKyung Park Yonsei University KoreaSung Kyu Park Chung-Ang University KoreaSung-Kun Park SK Hynix Inc KoreaWanjun Park Hanyang University KoreaAnthony Parker Macquarie University AustraliaBertrand Parvais IMEC BelgiumFrancisco Pasadas Universitat Autonoma de Barcelona SpainFabien Pascal Université de Montpellier 2 France



Marco Pasian University of Pavia ItalyJohn Pasour Naval Research Laboratory United StatesVasantha Pathirana Cambridge Microelectronics Ltd United KingdomDouglas Paul University of Glasgow United KingdomMarcelo Pavanello Centro Universitário da FEI BrazilAndreas Pawlak Technische Universität Dresden GermanyFrancois Peeters University of Antwerp BelgiumZingway Pei National Chung Hsing University TaiwanSameer Pendharkar Texas Instruments Inc. United StatesKang Peng University of South Carolina United StatesLulu Peng The Hong Kong University of Science and Technology ChinaAshish Penumatcha Intel Corp Hillsboro United StatesSusana Perez University of Salamanca SpainAmador Perez-Tomas Catalan Institute of Nanoscience and Nanotechnology SpainYuriy Pershin University of South Carolina United StatesMilan Pešic NaMLab GmbH GermanyJohn Petillo Science Applications International Corp. United StatesLuisa Petti ETH Zürich SwitzerlandMartin Pfost Reutlingen University GermanyAnh-Tuan Pham Samsung Semiconductor Inc. United StatesAlan Phelps University of Strathclyde United KingdomJamie Phillips The University of Michigan United StatesLuong Viêt Phung Laboratoire Ampère FranceGianluca Piazza Carnegie Mellon University United StatesEnrico Piccinini ARCES Research Center ItalyRodrigo Picos Universitat de les Illes Balears SpainBrian Pile University of Connecticut United StatesEdwin Piner Texas State University United StatesJoachim Piprek NUSOD Institute United StatesMarco Pirola Politecnico di Torino ItalyBurkhard Plaum Universitat Stuttgart GermanyDionyz Pogany Vienna University of Technology AustriaThierry Poiroux LETI - CEA/GRENOBLE FranceMirko Poljak University of Zagreb CroatiaCesar Polo European Space Research and Technology Centre NetherlandsJames Pomeroy University of Bristol United KingdomSalvador Portillo University of New Mexico United StatesChristoph Posch Vision Inst., Paris FranceChristophe Poulain CEA-LETI FranceSiavash Pourkamali University of Texas Dallas United StatesGeoffrey Pourtois IMEC BelgiumMichael Povolotskyi Purdue University United StatesManjunatha Prabhu GlobalFoundries United StatesChetan Prasad Intel Corporation United StatesYogesh Pratap University of Delhi IndiaJ Charles Pravin Karunya University IndiaGuillaume Prenat SPINTEC (CEA/CNRS) FranceMirko Prezioso University of California Santa Barbara United StatesEd Priesler TowerJazz Semiconductor United StatesFrancesco Maria Puglisi Universita’ di Modena e Reggio Emilia ItalyRaj Pulugurtha Georgia Institute of Technology United StatesSrinivas Pulugurtha Micron Technology Inc United StatesChuang Qian University of California Berkeley United StatesL. X. Qian University of Electronic Science and

Technology of China ChinaMing Qiao University of Electronic Science and

Technology of China China



Zhang Qing NTU SingaporeHao Qiu Institute of Industrial Science, The University of Tokyo JapanXinping Qu Fudan University ChinaRüdiger Quay Fraunhofer-IAF GermanyRaymond Quéré XLIM-CNRS-University of Limoges

France UMR no. 7252 FranceBhagwan Raad IIIT Jabalpur IndiaUjwal Radhakrishna IIT Madras IndiaMarko Radosavljevic Intel Corporation United StatesNagarajan Raghavan Singapore University of Technology & Design SingaporePraveen Raghavan IMEC BelgiumLars-Åke Ragnarsson IMEC BelgiumMunaf Rahimo ABB Switzerland Ltd SwitzerlandAshfaqur Rahman University of Arkansas United StatesAmritesh Rai University of Texas Austin United StatesSushil Raina MTRDC IndiaBijesh Rajamohanan SanDisk Corporation United StatesSiddharth Rajan The Ohio State University United StatesR. S. Raju CEERI IndiaShaloo Rakheja New York University United StatesShriram Ramanathan Purdue University United StatesStephen Ramey Intel Corporation United StatesAshok Ramu University of California Santa Barbara United StatesLi Ran University of Warwick United KingdomWenjing Rao University of Illinois Chicago United StatesJean-Pierre Raskin Catholic University of Louvain BelgiumJames Grantley Rathmell University of Sydney AustraliaMartin Rau ETH Zürich SwitzerlandStewart Rauch SUNY New Paltz United StatesUmberto Ravaioli University of Illinois Urbana-Champaign United StatesA. K. Raychaudhuri S.N.Bose National Centre for Basic Sciences IndiaPedram Razavi Tyndall National Institute, University College Cork IrelandMichael Read Calabazas Creek Research Inc United StatesAndrea Reale Universita di Roma Tor Vergata ItalyNicolas Reckinger Universite de Namur Departement de Physique BelgiumVijay Reddy Texas Instruments Inc. United StatesMark Reed Yale University United StatesSusanna Reggiani Università di Bologna ItalyLeonard Register University of Texas Austin United StatesHans Reisinger Infineon Technologies GermanyHao Ren China University of Petroleum Huadong ChinaRaul Rengel Universidad de Salamanca SpainCarlo Ricciardi Politecnico di Torino ItalyThomas Riedl University of Wuppertal GermanyFederica Rigoni Universita degli Studi di Brescia ItalyNiccolo Rinaldi Universita di Napoli ItalyDan Ritter Technion - Israel Institute of Technology IsraelJames Roach Peregrine Semiconductor United StatesJohn Robertson Cambridge University United KingdomPatrick Roblin Ohio State University United StatesFabrizio Roccaforte CNR-IMM ItalyStephane Roche Catalan Institute of Nanoscience and Nanotechnology SpainHelena Rodilla Chalmers University of Technology SwedenJohn Rodriguez Texas Instruments Inc. United StatesNoel Rodriguez Universidad de Granada SpainRosana Rodriguez Universidad Autonoma de Barcelona SpainJohn Rogers University of Illinois Urbana-Champaign United States



Jaume Roig OnSemiconductor Belgium BVBA BelgiumAlbert Roitman Communications and Power Industries, CPI Canada CanadaJuan Roldán Universidad de Granada SpainSean Rommel Rochester Institute of Technology United StatesKevin Ronald University of Strathclyde United KingdomIsabella Rossetto University of Padova ItalyVladislav Rostov Institute of High Current Electronics RussiaJohan Rothman Laboratoire d’Electronique et de Technologies

de l’Information FranceAnanda Roy Intel Corporation United StatesTania Roy University of Central Florida United StatesCunjun Ruan Institute of Electronics, Chinese Academy of Sciences ChinaAntonio Rubio Universitat Politècnica de Catalunya (UPC) SpainRoland Rupp Infineon Technologies AG GermanyNikita Ryskin Saratov State University RussiaHyunsurk Ryu Samsung Advanced Institute of Technology KoreaSei-Hyung Ryu Wolfspeed, Inc United StatesGerhard Rzepa Institute for Microelectronics AustriaToufik Sadi University of Glasgow United KingdomDipankar Saha Indian Institute of Technology Bombay IndiaAlan Sahakian Northwestern University United StatesShubham Sahay Indian Institute of Technology Delhi IndiaAmit Sahoo University of Limoges FranceChitrakant Sahu Indian Institute of Information Technology IndiaJerome Saint-Martin Univ. Paris-Sud, CNRS FranceTeruo Saito University of Fukui JapanWataru Saito Toshiba Corporation Semiconductor Company JapanMasumi Saitoh Toshiba Corporation JapanRedwan Sajjad Massachusetts Institute of Technology United StatesShigeki Sakai National Institute of Advanced Industrial

Science and Technology JapanPaulius Sakalas Technische Universität Dresden GermanyKiwamu Sakuma Toshiba Corporation JapanSayeef Salahuddin University of California Berkeley United StatesRamon Salazar GlobalFoundries United StatesJavier Salcedo Analog Devices, Inc. United StatesArash Salemi Purdue University United StatesJean-Michel Sallese EPFL SwitzerlandAkram Salman Texas Instruments Inc. United StatesCarlos Sampedro Universidad de Granada SpainIsaac K. Samsel Vanderbilt University United StatesSergey Samsonov Institute of Applied Physics RussiaSaurabh Sant ETH Zürich SwitzerlandAlberto Santarelli University of Bologna ItalyKrishna Saraswat Stanford University United StatesMehdi Saremi Arizona State University United StatesRakesh Sarin N.I.T Jalandhar IndiaAngsuman Sarkar Kalyani Govt. Eng. College IndiaBiplab Sarkar North Carolina State University United StatesChandan Kumar Sarkar Jadavpur University IndiaDeblina Sarkar Massachusetts Institute of Technology United StatesSubir Sarkar Jadavpur University IndiaReza Sarvari Sharif University of Technology IranAnup Sasikumar Texas Instruments Inc. United StatesGuido Sasse NXP Semiconductors NetherlandsKatsumi Sato Mitsubishi Electric Corporation Power Device Works JapanMatlabjon Sattorov Seoul National University Korea



Paul Saunier Qorvo, Inc. United StatesKen Sawada Sony Semiconductor Solutions Corporation JapanManoj Saxena University of Delhi IndiaTanuj Saxena Rensselaer Polytechnic Institute United StatesPaolo Scarbolo University of Udine ItalyEdl Schamiloglu University of New Mexico United StatesSusanne Scheinert Ilmenau Technical University GermanyJurriaan Schmitz University of Twente NetherlandsFerdinand Scholz University of Ulm GermanyRonald Schrimpf Vanderbilt University United StatesJames Schrock Texas Tech University United StatesMichael Schuette Air Force Research Laboratory United StatesJoel Schulman Aerospace Corporation United StatesChristian Schulte-Braucks Forschungszentrum Juelich GmbH and JARA-FIT GermanyJoerg Schulze University of Stuttgart GermanyUlrich Schwarz Technische Universitat Chemnitz GermanyJames Scott RMIT University AustraliaAlan Seabaugh University of Notre Dame United StatesSiegfried Selberherr Technical University of Vienna AustriaLuca Selmi Universita’ Degli Studi Di Udine ItalyLawrence Selvaraj GlobalFoundries SingaporeVladimir Semenov Institute of Applied Physics, Russian

Acadamy of Sciences RussiaSiddhartha Sen Indian Institute of Technology Kharagpur IndiaAbhronil Sengupta Purdue University United StatesBerardi Sensale-Rodriguez University of Utah United StatesJung Hun Seo University at Buffalo United StatesNatalia Seoane Swansea University United KingdomTae-Yeon Seong Korea University KoreaDiego Serrano Qualtré, Inc. United StatesArunas Setkus Center for Physical Sciences and Technology LithuaniaReza Shabannia Babol Noshirvani University of Technology IranYosi Shacham-Diamand Tel Aviv University IsraelAtif Shamim King Abdullah University of Science and Technology Saudi ArabiaFukai Shan Qingdao University ChinaKarthik Shankar University of Alberta CanadaLeilai Shao University of California Santa Barbara United StatesPeng Shao Freescale Semiconductor Inc. United StatesQiming Shao University of California Los Angeles United StatesMichael Shapiro Massachusetts Institute of Technology United StatesAbhishek Sharma Intel Corporation United StatesPankaj Sharma University of Notre Dame United StatesRajendra Sharma Central Electronics Engineering Research Institute IndiaYogesh Sharma University of Warwick Faculty of Science United KingdomMax Shatalov SETi United StatesJuncong She Sun Yat-sen University ChinaOsama Shekhah King Abdullah University of Science and Technology Saudi ArabiaJohn Shen Illinois Institute of Technology United StatesXiao Shen University of Memphis United StatesKuang Sheng Zhejiang University ChinaDavid Sheridan Alpha and Omega Semiconductor United StatesJian Shi Harvard University United StatesQing Shi Beijing Institute of Technology ChinaAyman Shibib Vishay Siliconix United StatesDonald Shiffler AFRL United StatesNaoteru Shigekawa Osaka City University JapanBhum Jae Shin Sejong University Korea



Changhwan Shin University of Seoul KoreaChih-Cheng Shih National Sun Yat-Sen University TaiwanKi-Chul Shin Samsung Display Co Ltd KoreaMincheol Shin KAIST KoreaSangHoon Shin Purdue University United StatesKeisuke Shinohara Teledyne Scientific & Imaging United StatesKenji Shiojima University of Fukui JapanAlex Shluger University College London United KingdomMayank Shrivastava Indian Institute of Science Bangalore IndiaJosé Siles Jet Propulsion Laboratory United StatesFrank Sill Torres Universidade Federal de Minas Gerais BrazilScott Sills Micron Technology Inc. United StatesMarco Silvestri Infineon Technologies AG AustriaGrigory Simin University of South Carolina United StatesEddy Simoen IMEC BelgiumJagar Singh GlobalFoundries United StatesShakti Singh Khalifa University United Arab EmiratesUdaybir Singh CEERI IndiaUttam Singisetti University of Buffalo United StatesSaurabh Sinha ARM United StatesSonja Sioncke IMEC BelgiumKim Siow Universiti Kebangsaan Malaysia MalaysiaBrian Skromme Arizona State University United StatesSergey Slipchenko Ioffe Institute RussiaGeert Smit NXP Semiconductors NetherlandsDuane Smith Raytheon Integrated Defense Systems United StatesMelissa Smith Massachusetts Institute of Technology United StatesJohn Snyder JCap, LLC United StatesVice Sodan IMEC BelgiumNorhayati Soin University of Malaya MalaysiaAimin Song University of Manchester United KingdomBo Song Cornell University United StatesJinhui Song University of Alabama United StatesXiaoqing Song ABB Inc United StatesYoon-Ho Song Electronics and Telecommunications

Research Institute KoreaYoonjong Song Samsung Electronics Co. Ltd KoreaYuncheng Song GlobalFoundries Inc United StatesAditya Sood Stanford University United StatesBart Sorée IMEC BelgiumSatofumi Souma Kobe University JapanMarilyne Sousa IBM Research GmbH SwitzerlandMatthew Spencer University of California Berkeley United StatesAlessandro Spinelli Politecnico di Milano ItalyRadu Sporea University of Surrey United KingdomVishnu Srivastava CSIR-CEERI Pilani IndiaTheodorus Standaert IBM United StatesFranco Stellari IBM T. J. Watson Research Center United StatesSoeren Steudel IMEC BelgiumMichael Stockinger NXP Semiconductors United StatesSteve Stoffels IMEC BelgiumNinoslav Stojadinovic University of Nis SerbiaKurt Stokbro QuantumWise DenmarkDaniele Stradi QuantumWise DenmarkSebastiano Strangio LFoundry S.r.l ItalyDavid Stroud The Ohio State University United StatesMichele Stucchi IMEC Belgium



Pin Su National Chiao Tung University TaiwanShi-Jian Su South China University of Technology ChinaAlexandre Subirats CEA-LETI FranceJun Suda Kyoto University JapanNobuyuki Sugii Low-power Electronics Association & Project JapanChang Suh Texas Instruments Inc. United StatesMin Chul Suh Kyung Hee University KoreaTomislav Suligoj University of Zagreb CroatiaChang-Qing Sun Nanyang Technological University SingaporeHuabin Sun Nanjing University ChinaRuize Sun National University of Singapore SingaporeWeifeng Sun Southeast University ChinaXingshu Sun Purdue University United StatesYanan Sun Shanghai Jiao Tong University ChinaYubao Sun Hebei University of Technology ChinaKalpathy Sundaram University of Central Florida United StatesWoongje Sung State University of New York Polytechnic Institute United StatesSaurabh Suryavanshi Stanford University United StatesMariko Suzuki Toshiba Corporation JapanTeruo Suzuki Socionext Inc. JapanToshi-kazu Suzuki Japan Advanced Institute of Science and Technology JapanViktor Sverdlov Technical University of Vienna AustriaMark Sweet University of Sheffield United KingdomJohn A. Swegle SRNL United StatesÁron Szabó ETH Zürich SwitzerlandStephen Szczepaniak The University of Texas at Austin United StatesVladimir Székely Technical University of Budapest HungaryMassood Tabib-Azar University of Utah United StatesMarko Tadjer Naval Research Laboratory United StatesYa-Hsiang Tai National Chiao Tung University TaiwanShinichi Takagi University of Tokyo JapanMitsue Takahashi National Institute of Advanced Industrial Science

and Technology JapanYasuo Takahashi Hokkaido University JapanKenichi Takano Keysight Technologies JapanKazuto Takao Toshiba Corporation JapanKohki Takatoh Tokyo University of Science JapanIsao Takayanagi Brillnics JapanKuniharau Takei University of California Berkeley United StatesN.A. Talik Universiti Tenaga Nasional MalaysiaAndrea Natale Tallarico University of Bologna ItalyChee Hing Tan University of Sheffield United KingdomChee-Keong Tan Clarkson University United StatesChuan Seng Tan Nanyang Technological University SingaporeYaohua Tan Network for Computational Nanotechnology United StatesHiroshi Tanabe NLT Technologies, Ltd. JapanKatsuaki Tanabe Kyoto University JapanChika Tanaka Toshiba Corporation JapanKenichiro Tanaka Panasonic Corporation JapanJin Tang National Semiconductor Corporation United StatesKea-Tiong(Samuel)

Tang National Tsing Hua University Taiwan

Zhikai Tang Efficient Power Conversion Corporation United StatesMilan Tapajna Institute of Electrical Engineering SAS SlovakiaJean Guy Tartarin LAAS & Universite de Toulouse FranceDimitrios Tassis Aristotle University of Thessaloniki GreeceYoshinori Tatematsu University of Fukui Japan



Yuan Taur University of California San Diego United StatesD. Martin Taylor Bangor University United KingdomAkinobu Teramoto Tohoku University JapanParagkumar Thadesar Qualcomm Technologies Inc. United StatesHimanshu Thapliyal University of Kentucky United StatesAaron Thean National University of Singapore SingaporeLuuk Tiemeijer NXP Semiconductors NetherlandsChang Ting-Chang National Sun Yat-Sen University TaiwanJulio Tinoco Universidad Veracruzana MexicoYuri Tkachev Silicon Storage Technology, Inc. United StatesMitsuhiro Togo GlobalFoundries United StatesYashuhiro Tokura University of Tsukuba JapanKatsuhiro Tomioka Hokkaido University JapanOlaf Tornblad Infineon Technologies Americas United StatesGalo Torres Sevilla King Abdullah University of Science and Technology Saudi ArabiaFabrizio Torricelli Eindhoven University of Technology NetherlandsXuan Anh Tran Nayang Technological University SingaporeBoubacar Traore CEA-LETI FranceFabio Traversa LoGate Computing Inc. United StatesRenan Trevisoli Centro Universitário da FEI BrazilVishal Trivedi Freescale Semiconductor Inc. United StatesNicola Trivellin Universita di Padova ItalyRichard True L-3 Communications Electron Devices Division United StatesChia-Lung Tsai Chang Gung University TaiwanDu-Ming Tsai Yuan-Ze University TaiwanJeff Tsai Tatung University TaiwanMeng-Yen Tsai Georgia Institute of Technology United StatesYing-Chieh Tsai Macronix International Co. Ltd. TaiwanPo-Hao Tseng Macronix International Co. Ltd. TaiwanAtsushi Tsukazaki Tohoku University JapanGen Tsutsui IBM United StatesS. L. Tu Macronix International Co. Ltd. TaiwanWei-Chen Tu Chung Yuan Christian University TaiwanJohn Tucek Northrop Grumman Corporation United StatesChih-Hang Tung Taiwan Semiconductor Manufacturing Company TaiwanAhmet Tura Intel United StatesStanislav Tyaginov Vienna University of Technology AustriaKosuke Uchida Sumitomo Electric Industires, Ltd. JapanNishad Udugampola Cambridge Microelectronics Ltd United KingdomOsamu Ueda Kanazawa Institute of Technology JapanMakoto Ueki Sony Semiconductor Manufacturing Corporation JapanYasuhiro Uemoto Panasonic Corporation JapanTakafumi Uemura Osaka University JapanHitoshi Umezawa National Institute of Advanced Industrial

Science and Technology JapanYukiharu Uraoka NAIST JapanMichael Uren University of Bristol United KingdomHabibe Uslu Karabük University TurkeyMuhammad Usman KTH-Royal Institute of Technology SwedenRamesh Vaddi DSPM International Institute of

Information Technology IndiaRakesh Vaid Jammu University IndiaKaushik Vaidyanathan Intel United StatesMani Vaidyanathan University of Alberta CanadaAntonio Valletta CNR-IMM ItalyMarco Vallone Politecnico di Torino ItalyIlia Valov Forschungszentrum Jülich GmbH Germany



Simon Van Beek IMEC BelgiumDaniel Van Blerkom Forza Silicon Corp. United StatesEdward Van Brunt Cree, Inc. United StatesMark van Dal TSMC Europe BV BelgiumWillem Van Driel Philips Lighting NetherlandsJan Van Houdt IMEC BelgiumRonald van Langevelde NXP Semiconductors NetherlandsBernard Vancil E Beam Inc. United StatesLode Vandamme Eindhoven University of Technology NetherlandsWilliam Vandenberghe University of Texas Dallas United StatesGiorgio Vannini University of Ferrara ItalyMassimo Vanzi University of Cagliari ItalyLuca Varani Universite Montpellier 2 FranceAlon Vardi Massachusetts Institution of Technology United StatesDhanoop Varghese Texas Instruments Inc. United StatesB. G. Vasallo Universidad de Salamanca SpainVladislav Vashchenko Maxim Integrated Products Inc United StatesDragica Vasileska Arizona State University United StatesReinaldo Vega IBM United StatesDmitry Veksler NIST United StatesAnabela Veloso IMEC BelgiumUmamaheswara Vemulapati ABB Switzerland Ltd SwitzerlandNagavarapu Venkatagirish SanDisk Corporation United StatesClaudio Verona Università di Roma Tor Vergata ItalyDevin Verreck IMEC BelgiumMaarten Vertregt NXP Semiconductors NetherlandsRamakrishna Vetury RF Micro Devices United StatesElisa Vianello CEA–LETI MINATEC FranceAnthony Villalon CEA-LETI FranceLasse Vines University of Oslo NorwayK. J. Vinoy Indian Institute of Science IndiaRajat Vishnoi IIT Delhi IndiaSteven Vitale Massachusetts Institute of Technology United StatesAlexander Vlasov Naval Research Laboratory United StatesEric Vogel Georgia Institute of Technology United StatesSorin Voinigescu University of Toronto CanadaSteven Voldman Qimonda United StatesMartin von Haartman Intel United StatesHolger von Wenckstern Universität Leipzig Institut für

Experimentelle Physik II GermanyDietmar Wagner Max-Planck-Institut fuer Plasmaphysik GermanyMuhammad A. Wahab Purdue University United StatesWilliam Wahby Georgia Institute of Technology United StatesPatrick Waltereit Fraunhofer-IAF GermanyJing Wan IMEP-LAHC FranceJing Wan Fudan University ChinaBo Wang HKUST Hong KongFei Wang Technische Universiteit Delft NetherlandsGang Wang Chinese Academy of Sciences ChinaGunuk Wang Rice University United StatesHan Wang University of Southern California United StatesHarry Wang Macronix International Co. Ltd. TaiwanJianxun Wang University of Electronic Science and

Technology of China ChinaKai Wang Sun Yat-sen University ChinaL. S. Wang School of Optical and Electronic Information ChinaLi-Feng Wang Southeast University China



Maojun Wang Peking University ChinaMingxiang Wang Soochow University ChinaPeng-Fei Wang Fudan University ChinaQing Hua Wang Arizona State University United StatesRunsheng Wang Peking University ChinaShaodi Wang University of California Los Angeles United StatesSheng Kai Wang Institute of Microelectronics, Chinese

Academy of Sciences ChinaSizhen Wang North Carolina State University United StatesTahui Wang National Chiao Tung University TaiwanWei Wang Institute of Microelectronics ChinaWei Wang Jilin University ChinaXiaobin Wang Seagate Technology LLC United StatesXiaoping Wang Huazhong University of Science and Technology ChinaXin Peng Wang Institute of Microelectronics SingaporeXingsheng Wang Synopsys United KingdomXinhua Wang Institute of Microelectronics, Chinese

Academy of Sciences ChinaXinqiang Wang Peking University ChinaXufeng Wang Purdue University United StatesYan Wang Tsinghua University ChinaYijiao Wang Peking University ChinaYing Wang Institute of Microelectronics ChinaYufeng Wang University of Southern California United StatesZheyao Wang Tsinghua University ChinaEdward Wasige University of Glasgow United KingdomPieter Weckx Katholieke Universiteit Leuven BelgiumJie Wei University of Electronic Science and

Technology of China ChinaJin Wei The Hong Kong University of Science and Technology Hong KongJinsong Wei Shanghai Institute of Optics and Fine Mechanics ChinaZhiqiang Wei Panasonic Semiconductor Solutions Co., Ltd. JapanJeff Weldon Carnegie Mellon University United StatesThilo Werner CEA-LETI FranceLars-Erik Wernersson Lund University SwedenFrans Widdershoven NXP Semiconductors NetherlandsBrian Wier Georgia Institute of Technology United StatesJonathan Wierer Lehigh University United StatesDylan Williams NIST United StatesOliver Williams Cardiff University United KingdomJeffrey Wilson NASA Glenn Research Center United StatesThomas Wilson Marshall University United StatesGilson Wirth UFRGS BrazilMark Wistey University of Notre Dame United StatesJerzy Wolowski Instytut Fizyki Plazmy i Laserowej Mikrosyntezy PolandKing-Yuen Wong Taiwan Semiconductor Manufacturing Company TaiwanMan Hoi Wong National Institute of Information and

Communications Technology JapanSimon Wong Stanford University United StatesJiyong Woo Pohang University of Science and Technology KoreaDirk Wouters RWTH-Aachen University GermanyJohn Wrbanek NASA Glenn Research Center United StatesChen-Jun Wu Macronix International Co. Ltd. TaiwanChung-Cheng Wu Taiwan Semiconductor Manufacturing Company TaiwanChunlei Wu Peking University ChinaErnest Wu IBM Microelectronics Division United StatesGuohua Wu National University of Singapore Singapore



Hao Wu Ferric Inc. United StatesHeng Wu IBM Research United StatesHuaqiang Wu Tsinghua University ChinaJau-Yi Wu Macronix International Co. Ltd. TaiwanJianzhi Wu University of California San Diego United StatesMeng-Chyi Wu National Tsing Hua University TaiwanShin-Tson Wu University of Central Florida United StatesTian-Li Wu National Chiao Tung University TaiwanWei-Jing Wu Institute of Polymer Optoelectronic

Materials and Devices ChinaXian Wu University of Texas Austin United StatesYuh-Renn Wu National Taiwan University TaiwanYung-Chun Wu National Tsing Hua University TaiwanJoachim Wuerfl Ferdinand-Braun-Institut GermanyHans-Jürgen Wünsche Weierstrass Institute for Applied

Analysis and Stochastics GermanyKejun Xia NXP Semiconductors NV United StatesZjiliang Xia Institute of Microelectronics, Chinese

Academy of Sciences ChinaRenzhen Xiao Northwest Institute of Nuclear Technology ChinaZhong Xiaopeng Hong Kong University of Science and Technology Hong KongGang Xie Zhejiang University ChinaFeng Xiong University of Illinois Urbana-Champaign United StatesChuan Xu Maxim Integrated United StatesDong Xu BAE Systems United StatesHuiming Xu Skyworks Solutions, Inc. United StatesJianbin Xu Chinese University of Hong Kong Hong KongKai Da Xu Xiamen University ChinaKaikai Xu University of Electronic Science and

Technology of China ChinaLizhi Xu University of Michigan United StatesMing Xu Xi’an University of Technology ChinaSheng Xu University of California San Diego United StatesYong Xu Dongguk University KoreaHisato Yabuta Canon Research Center JapanChandan Yadav Indian Institute of Technology Kanpur IndiaDharmendra Yadav Indian Institute of Information Technology IndiaDmitry Yakimets Katholieke Universiteit Leuven BelgiumEilam Yalon Stanford University United StatesToshishige Yamada Santa Clara University United StatesY. Yamaguchi University of Fukui JapanJize Yan University of Southampton United KingdomQun (Frank) Yan IFES United StatesBo-Ru Yang State Key Laboratory of Optoelectronic

Materials and Technologies ChinaJianhua (Joshua) Yang University of Massachusetts United StatesJie Yang IBM United StatesShengyi Yang Beijing Institute of Technology ChinaShu Yang Zhejiang University ChinaWentao Yang HKUST Hong KongZhaonian Yang Xi’an University of Technology ChinaHiroshi Yano University of Tsukuba JapanEn-Ping Yao University of California Los Angeles United StatesKaiyuan Yao University of California Berkeley United StatesNaoki Yasuda Toshiba Corporation JapanHuaiyu Ye Delft University of Technology NetherlandsPeide Ye Purdue University United States



C. W. Yeh Macronix International Co. Ltd. TaiwanWen-Kuan Yeh National University of Kaohsiung TaiwanYee-Chia Yeo National University of Singapore SingaporeAshkhen Yesayan Institute of Radiophysics and Electronics of the

Armenian National Academy of Sciences ArmeniaHiroaki Yoda Toshiba Corporation JapanSeunghyp Yoo KAIST KoreaJun-Sik Yoon POSTECH KoreaMyung-Han Yoon Gwangju Institute of Science and Technology KoreaYoungki Yoon University of Waterloo CanadaKatsuhisa Yoshida The University of Tokyo JapanToshiyuki Yoshida Shimane University JapanSadayuki Yoshitomi Toshiba Corporation JapanHan You University of Cincinnati United StatesWei-Xiang You National Chiao Tung University TaiwanChadwin Young University of Texas Dallas United StatesSheng-Joue Young National Formosa University TaiwanCaroline Yu Columbia University United StatesChang-Hung Yu National Chiao Tung University TaiwanHao Yu IMEC BelgiumHyun-Yong Yu Korea University KoreaRan Yu Tyndall National Institute IrelandShimeng Yu Arizona State University United StatesTao Yu Analog Devices, Inc. United StatesYun Seop Yu Hankyong National University KoreaZhiping Yu Tsinghua University ChinaHongtao Yuan Stanford University United StatesJiahui Yuan SanDisk Corporation United StatesG. I. Zaginaylov Kharkov Institute of Physics and Technology UkraineMohammadShawkat

Zaman University of Toronto Canada

Peter Zampardi Skyworks Solutions, Inc. United StatesXining Zang University of California Berkeley United StatesEnrico Zanoni Universita di Padova ItalyVladimir Zapevalov Institute of Applied Physics, Russian

Acadamy of Sciences RussiaAlexander Zaslavsky Brown University United StatesGennady Zebrev University MEPHI RussiaAbdelhalim Zekry Ain Shams EgyptJun Zeng MaxPower Semiconductor Inc United StatesLang Zeng Beihang University ChinaBo Zhang University of Electronic Science and

Technology of China ChinaChaoqi Zhang Oracle Corp United StatesChen Zhang IBM Research United StatesJian Zhang Liverpool John Moores University United KingdomJincheng Zhang Xidian University ChinaJinping Zhang University of Electronic Science and

Technology of China ChinaJun Zhang National University of Defense Technology ChinaLeqi Zhang IMEC BelgiumLiang Zhang University of Strathclyde United KingdomLiangliang Zhang Stanford University United StatesLining Zhang The Hong Kong University of Science and Technology Hong KongLiuyang Zhang Beihang University ChinaMeng Zhang Hong Kong University of Science and Technology Hong KongPeng Zhang Michigan State University United States



Qin Zhang University of Pisa ItalyRui Zhang Zhejiang University ChinaShengdong Zhang Peking University ChinaWei Zhang Liverpool John Moores University United KingdomWeiJia Zhang University of Toronto CanadaXing Zhang Peking University ChinaXuchen Zhang Georgia Institute of Technology United StatesYang Zhang Georgia Institute of Technology United StatesYilei Zhang Nanyang Technological University SingaporeYong Zhang University of North Carolina Charlotte United StatesYongxi Zhang Texas Instruments Inc. United StatesYuhao Zhang Massachusetts Institute of Technology United StatesZeng Zhang The Ohio State University United StatesZhiping Zhang Stanford University United StatesZhiyong Zhang Institution of Physical Electronics ChinaBo Zhao University of California Berkeley United StatesJiaqing Zhao Shanghai Jiao Tong University ChinaLiang Zhao Crossbar Inc. United StatesQing-Tai Zhao Forschungszentrum Jülich GmbH GermanyQixiang Zhao University of Electronics Science and Technology ChinaWeisheng Zhao Beihang University ChinaWeiSheng Zhao Institut d’Electronique Fondamentale (IEF),

Univ. Paris-Sud 11 FranceXin Zhao Massachusetts Institute of Technology United StatesYi Zhao Zhejiang University ChinaHuai Zheng Wuhan University ChinaXiao-Hong Zheng Institute of Solid State Physics Chinese

Academy of Sciences ChinaChunhua Zhou The Hong Kong University of Science and Technology Hong KongJiantao Zhou University of Michigan United StatesKun Zhou University of Electronic Science and

Technology of China ChinaPing Zhou Elekta Beijing Medical Equipment Ltd. ChinaQi Zhou University of Electronic Science and

Technology of China ChinaXin Zhou UESTC ChinaXing Zhou Nanyang Technological University SingaporeYan Zhou Chinese University of Hong Kong ChinaYugang Zhou Nanjing University ChinaChenxin Zhu Stanford University United StatesJing Zhu Southeast University, China ChinaWeinan zhu The University of Texas at Austin United StatesZhengyong Zhu The Institute of Microelectronics of the

Chinese Academy of Sciences ChinaYan Zhuang Wright State University United StatesFei Zhuge Chinese Academy of Sciences ChinaMohammed Zidan University of Michigan United StatesThomas Zimmer Université de Bordeaux FranceThomas Zirkle University of Notre Dame United StatesBingsuo Zou Beijing Insitute of Technology ChinaDavid Zubia University of Texas El Paso United States

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IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 12, … · 2018-02-07 · IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 64, NO. 12, DECEMBER 2017 4777 Golden List of Reviewers for