Upload
warren-norton
View
218
Download
0
Embed Size (px)
DESCRIPTION
- Advanced Device Physics - Hands-on Calculations IEE5328 Prof. MJ Chen NCTU3 Two Elements of the Course
Citation preview
IEE5328 Nanodevice Transport Theory and Computational Tools
Prof. Ming-Jer ChenDept. Electronics EngineeringNational Chiao-Tung UniversityFeb. 20, 2013
Lecture 1:
Introduction
1IEE5328 Prof. MJ Chen NCTU
Can we survive in the highly-challenging but widely-controversial future?
IEE5328 Prof. MJ Chen NCTU 2
Motivation of this Nano Course
- Advanced Device Physics
- Hands-on Calculations
IEE5328 Prof. MJ Chen NCTU 3
Two Elements of the Course
• Industry Compatible
• ITRS Oriented
• Covering FETs down to 3-nm node
4
ITRS : International Technology Roadmap for Semiconductors
Three Features of the Course:
IEE5328 Prof. MJ Chen NCTU
IEE5328 Prof. MJ Chen NCTU 5
6
FETs Down-Scaling
IEE5328 Prof. MJ Chen NCTU
7
Polysilicon Gate Bulk Planar Extension• Strained Silicon Channel• Substrate/Channel Orientation
IEE5328 Prof. MJ Chen NCTU
8
High-k Metal Gate Bulk Planar Extension• Strained Silicon Channel• Substrate/Channel Orientation
IEE5328 Prof. MJ Chen NCTU
9
• Strained Silicon/Germanium/GaAs Channel• Substrate/Channel Orientation• Rsd issue
High-k Metal Gate FinFETs or Multi-Gate FETs
PlanarStructure
VerticalStructure
IEE5328 Prof. MJ Chen NCTU
TSMC 10, 14, and 16 nm
TSMC 20 nm
IEE5328 Prof. MJ Chen NCTU 10
ITRS Roadmap
11
High-Performance NanoFETs projected by ITRS 2011 (http://www.itrs.net)
(Bulk and SOI)
IEE5328 Prof. MJ Chen NCTU
12
High-Performance FETs projected by ITRS 2011 (http://www.itrs.net)
(Bulk and SOI)
IEE5328 Prof. MJ Chen NCTU
13
High-Performance FETs projected by ITRS 2011 (http://www.itrs.net)
(Multi-Gates and SOI)
IEE5328 Prof. MJ Chen NCTU
14
High-Performance FETs projected by ITRS 2011 (http://www.itrs.net)(Multi-Gates and SOI)
IEE5328 Prof. MJ Chen NCTU
15
Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net)
(Bulk, SOI, and Multi-Gates)
IEE5328 Prof. MJ Chen NCTU
16
Low-Power NanoFETs projected by ITRS 2011 (http://www.itrs.net)
(Bulk, SOI, and Multi-Gates)
IEE5328 Prof. MJ Chen NCTU
17
• EOT down to around 0.5 nm
- Tunneling - Additional Mobility Degradation
• Feature Size (Channel Length) down to 3 nm
- Non-equilibrium Transport - DIBL Penetration - Tunneling
Two Key Projections by ITRS:
Printed Gate Length: as in layout phasePhysical Gate Length Lg: post-processing as determined by TEM or C-V fittingChannel Length L: Physical Gate Length Lg minus 2 times the overlap extension Lov
IEE5328 Prof. MJ Chen NCTU
The Purposes of the Course:
-Provide Advanced Device Physics for a working nanoFET
-Capture Key Points behind nanoFETs data and structures, simply through hands-on calculations
18IEE5328 Prof. MJ Chen NCTU
You will do during this course:
-Capture Advanced Device Physics
-Read good papers
-Derive models and do calculations, given TCAD and/or experimental data
- Also run TCAD
-Establish Physical Pictures of your own 19IEE5328 Prof. MJ Chen NCTU
Course Contents
20IEE5328 Prof. MJ Chen NCTU
• MOS Energy Band Diagrams
• C-V
• Defects, Oxygen Vacancies
• Tunneling Paths
• Models, TCAD, Experimental Data, Calculation, and Fitting
1. High-k Metal-Gate Stacks: MOS Electrostatics
21
2. High-k Metal-Gate FETs: Channel Mobility• Quantum Confinement
• Band Structure
• Coulomb Impurity Scattering, Phonon Scattering, Surface Roughness Scattering
• Remote Interface Plasmons Scattering, Remote Coulomb (Defects) Scattering, Remote Soft Phonon Scattering
• Models, TCAD, Experimental Data, Calculation, and FittingIEE5328 Prof. MJ Chen NCTU
• Energy Band Diagrams
• Tunneling Paths
• Models, TCAD, Experimental Data, Calculation, and Fitting
3. Band-to-Band Tunneling
22
4. Ballistic and Backscattering in Channel• Energy Band Diagrams
• 2-D versus 1-D
• Models, TCAD, Experimental Data, Calculation, and Fitting
IEE5328 Prof. MJ Chen NCTU
• Energy Band Diagrams
• Ballistic Mobility
• Scattering by Highly-Doped Source/Drain Plasmons
• Source Starvation
• Models, TCAD, Experimental Data, Calculation, and Fitting
5. Degraded Mobility and Saturation Current with Shrinking L
23
6. Threshold Roll-off and DIBL Penetration (Electrostatics from Source and Drain)
• Energy Band Diagrams
• 2-D versus 1-D
• Models, TCAD, Experimental Data, Calculation, and Fitting
IEE5328 Prof. MJ Chen NCTU
• Ultrathin Source/Drain Extension Junction
• Components of Series Resistance Rsd
• Models, TCAD, Experimental Data, Calculation, and Fitting
7. Other Issues of Significance - I
24
8. Other Issues of Significance - II• Alternative Channel Materials: Ge, GaAs, and Graphene
• Models, TCAD, Experimental Data, Calculation, and Fitting
IEE5328 Prof. MJ Chen NCTU
•Lecture Notes, Prof. Ming-Jer Chen, 2013.
•Literature Papers
25
Course Material to be Delivered:
IEE5328 Prof. MJ Chen NCTU
Taken-Home Works and Reports Only
26IEE5328 Prof. MJ Chen NCTU
Grading