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IBM Demonstrates Graphene Transistor Twice as Fast as SiliconPOSTED B: DEXTER JOHNSON / MON, FEBRUARY 08, 2010

IBM has created a graphene-based transistor capable of operating at 100 gigahertz, which is more than twice as fast

as s ilicon chips wi th speeds of 40 GHz using the same gate length. But unlike other high-speed transis tors which ar

made from expensive semiconducting materials like indium phosphide, the graphene transistor will not require the

same cooling.

IBM developed the graphene radio frequency transistors for the Defense Advanced Research Project Agency under its

Carbon Electronics for RF Applications (CERA) program. The goal of the CERA program and of the IBM researchers

is to get the speed of the graphene transis tor to 1 THz.

The graphene transistor demonstrated in the research reported in Science had a gate length of 240 nanometers and

by applying currently available li thographic techniques it will be poss ible to reduce that gate length to 35 nanomaters.

This reduction in gate length should bring the 1 THz goal within reach.

As reported last week with IBMs announcement of creating a band gap for graphene, Phaedon Avouris and his team

5/13/2018 IBM Demonstrates Graphene Transistor Twice as Fast as Silicon - IEEE Spectrum - ...

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2/28/12 IBM Demonstrates Graphene Transistor Twice as Fast as Silicon - IEEE Spectrum

spectrum.ieee.org/nanoclast//ibm-demonstrates-graphene-transistor-twice-as-fast-as-silicon

of researchers at the IBM T.J. Watson Research Center in Yorktown Heights, New York, used a metal top-gate

architecture employing a high-k dielectric oxide ins ulated from the graphene layer by a polymer for this high s peed RF

transistor.

It would seem with these two announcements from IBM within a week of one another that graphene could move more

quickly into commercial electronic applications than its carbon cousin, carbon nanotubes.

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5/13/2018 IBM Demonstrates Graphene Transistor Twice as Fast as Silicon - IEEE Spectrum - ...

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