Dr. Hugh L. Porter

Mobile: (919) 607-6772, Email: hughporter@gmail.comUS Citizen

Research and Work ExperienceGLOBALFOUNDRIES--TEM Scientist and Failure Analysis Engineer--May

2011 to February 2015 Transmission electron microscopy (TEM) development.

o Completed two year assignment as Research Scientist at International SEMATECH focused on advanced TEM applications research.

o Engaged in the exploration of advanced TEM techniques, such as holography, tomography, and nanobeam diffraction (NBD), for applications to future technology nodes.

Published 3 papers on electron tomography. Successfully introduced and qualified nanobeam diffraction

technique at Fab 8 in Malta, NY. Responsible for working with tool supplier to introduce electron

holography technique to Fab 8. Named on a patent on strain technique for 10 nm devices

submitted to the Taiwan Intellectual Property Office in 2015.o Tool owner for five FEI TEM microscopes, including two Titans, one probe

corrected, and one image corrected, one FEI Osiris, and two FEI Tecnais.o Responsible for training new TEM engineers in advanced techniques such as

EDX element mapping, EELS, tomography and holography.o Working with FEI applications engineers to develop a technique for STEM

magnification calibration that produces accuracy better than 1%. Failure Analysis Engineer

o Responsible for fault isolation and physical failure analysis of test structures in the 28nm process.

o Fault isolation through EBIC/EBAC, PVC/AVC, with a Kleindiek nanoprobe.o Dual-beam FIB cross-sectioning on FEI Helios 450 and 1200.o TEM sample preparation with Omniprobe on FEI Helios 450.

Maxim Integrated Products—Product Engineer—July 2006 to May 2010 Failure analysis on silicon wafer high-frequency, mixed-signal electronic devices.

o FEI dual-beam, and single-beam focused ion beam (FIB) operation. TEM lift-out, and STEM imaging on FEI Strata 400 dual-beam FIB. Circuit editing of high-frequency devices using an FEI V600 single-beam

FIB.o Fault isolation on failing devices using infrared emission microscopy,

backside OBIRCH, and SEM voltage contrast.o Electrical probing and testing of failing parts to verify device performance.o Chemical and physical deprocessing of packaged dice.

Hugh Porter—Ph.D., Electrical Engineering— (919) 607-6772

o Interacting with layout designers resolving design for test (DFT) issues on next generation parts.

o Yield analysis for root cause determination using various software-based tools.

Intel Corporation—TEM/LYA Engineer—May 2005 to May 2006 Transmission electron microscopy (TEM) for the Yield Department of Intel’s

D1D Ramp facility.o Responsible for the TEM work on samples related to the 65 nm generation of

Intel microprocessors. Thorough knowledge of the operation of both the FEI Tecnai F-20 and the

JEOL 2010F, employing TEM bright- and dark-field imaging, high resolution, Z-contrast STEM, and EDX.

o Interfaced with process engineers through all phases of TEM work plan, from conception, to implementation, to the final presentation of the data.

o Managed two sample preparation technicians. Low yield analysis (LYA) for the Yield Department of Intel’s D1D Ramp facility.

o Responsible for analyzing the yield impact of process changes and excursions.o Performed fault isolation on failing devices using thermally-induced voltage

alteration (TIVA).North Carolina State University—Post-doctoral researcher and research

assistant—August 2000 to May 2005 Conducted leading-edge research in opto-electronic materials science. Trained graduate students in thin films fabrication and characterization. Prepared several journal articles for publication. Pioneered a novel method for low-energy, high-temperature ion implantation.

o Patent application approved by North Carolina State University Intellectual Property Committee.

Research focus on doping characteristics of isoelectronic impurities in compound semiconductors.

Extensive experience in thin films growth through pulsed laser deposition, and pulsed electron deposition.

Performed a variety of characterization experiments including transmission electron microscopy (TEM), x-ray diffraction (XRD), photoluminescence (PL), optical transmission and absorption, and atomic force microscopy (AFM).

Built photoconductivity (PC) measurement system. Built low temperature electrical characterization experiment.Missouri State University—Graduate Assistant—August 1998 to July 2000 Built low-temperature Hall Effect measurement experiment. Carried out research on n-type gallium nitride thin films. Taught undergraduate physics laboratory classes for four semesters.

EducationPh.D. —Electrical Engineering—North Carolina State University—January

2005. Graduate Fellowship awarded by the Department of Education, Graduate

Assistantships in Areas of National Need (GAANN).

Hugh Porter—Ph.D., Electrical Engineering— (919) 607-6772

Master of Science—Materials Science—Missouri State University—May 2000.Bachelor of Science—Mechanical Engineering—Rensselaer Polytechnic Institute

—May 1991.

Publications and Patents W. Zhao, H. Porter, R. Rai, P.-Y. Chen, and J. Russell. " Beware of Artifacts

When Characterizing Nanometer Device Features Smaller than a TEM Lamella Thickness in Semiconductor Wafer-foundries", Microscopy and Microanalysis 20, Suppl. 3, (2014).

A. Bello, H. Cai, H. L. Porter, patent pending for process improvement at 10 nm node. (Public disclosure of details not currently allowed.)

H. L. Porter, M.-G. Sung, E. Bersch, A. Cordes, "Applications of electron tomography for semiconductor failure analysis and reference metrology", International Symposium on Semiconductor Manufacturing, Tokyo, Japan, (2012).

H. L. Porter, J. D. Russell, "Applications of electron tomography to advanced CMOS process technology", Frontiers of Characterization and Metrology for Nanoelectronics, Gaithersburg, MD, (2013).

A. Cordes, B. D. Bunday, S. Hand, J. Osborne, H. Porter, "Towards development of a sidewall roughness standard", SPIE Advanced Lithography (2013).

H. L. Porter, A. L. Cai, J. F. Muth, J. Narayan. “Enhanced Photoconductivity of ZnO films Co-Doped with Nitrogen and Tellurium”. Applied Physics Letters, 86, 211918 (2005).

H. L. Porter, J. F. Muth, J. Narayan, J. V. Foreman, H. O. Everitt. “Photoluminescence Study of ZnO Films Co-doped with Nitrogen and Tellurium”. Journal of Applied Physics, 100, 123102 (2006).

H. L. Porter, C. Mion, A. L. Cai, X. Zhang, and J. F. Muth. “Growth of ZnO Films on C-Plane (0001) Sapphire by Pulsed Electron Deposition (PED)”. Materials Science and Engineering B, 119, 210-212, (2005).

Hugh Porter—Ph.D., Electrical Engineering— (919) 607-6772