hmc220 (v03.1111) - OBSOLETE - analog.com · For price, delivery and to place orders: Hittite Microwave corporation, 2 elizabeth Drive, chelmsford, Ma 01824 Phone: 978-250-3343 Fax:

For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or [email protected]

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HMC220MS8 / 220MS8Ev03.1111

GaAs MMIC SMT Double - bAlAnCeD MIxer, 5 - 12 GHz

v03.1111

General Description

Features

Functional Diagram

Wide iF Frequency range: Dc - 4 gHz

excellent lo to rF isolation: 25 db

low conversion loss: 7 db

no Dc bias & no external Matching required

ideal for upconversion & Downconversion

MsoP8 sMT Package, 14.8 mm²

electrical Specifications, TA = +25° C, As a Function of lo Drive

Typical Applications

The HMc220Ms8(e) is ideal for:

• VSAT & Mobile SatCom Terminals

• Microwave & Military Radio

• Wireless Backhaul Equipment

• Automotive, DSRC and IVHS

• Military RADAR, EW, and ECM Subsystems

The HMC220MS8(E) is a wideband double-balanced mixer in an 8 lead plastic surface mount package. This fully integrated MMIC mixer is fabricated in a GaAs MESFET process and requires no DC bias and no external matching components. The HMc220Ms8(e) mixer integrates schottky diode mixing elements and on-chip balun transformers to deliver excellent isola-tion from lo to rF and from lo to iF. The wide iF bandwidth of DC to 4 GHz enables this mixer to be used in a wide range of general purpose applications including upconverters, downconverters, biphase modulators, demodulators, and phase comparators. The HMc220Ms8(e) operates with lo drive levels as low as +7 dBm, and exhibits only 7 dB typical conver-sion loss.

Parameter

lo = +13 dbm iF = 100 MHz

lo = +13 dbm iF = 100 MHz

lo = +10 dbm iF = 100 MHz units

Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

Frequency range, rF & lo 5 - 10 10 - 12 5.9 - 10 gHz

Frequency range, iF Dc - 4 Dc - 4 Dc - 3.5 gHz

conversion loss 7.0 10 8.5 10.5 7.5 10 db

noise Figure (ssb) 7.0 10 8.5 10.5 7.5 10 db

lo to rF isolation 17 25 13 18 17 25 db

lo to iF isolation 20 28 14 20 20 28 db

iP3 (input) 14 17 16 21 13 16 dbm

1 db gain compression (input) 4 8 4 8 5 8 dbm

OBSOLETE

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 781-329-4700 • Order online at www.analog.com Application Support: Phone: 1-800-ANALOG-D



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HMC220MS8 / 220MS8Ev03.1111


Conversion Gain vs Temperature @ lo = +10 dbm Isolation @ lo = +10 dbm

Conversion Gain vs. lo Drive return loss @ lo = +10 dbm

IF bandwidth vs lo Drive Conversion Gain and return loss

P1db vs. Temperature lo = +10 dbm

-20

-15

-10

-5

0

5 6 7 8 9 10 11 12 13

-40 C+25 C+85 C

CO

NV

ER

SIO

N G

AIN

(dB

)

FREQUENCY (GHz)

0

4

8

12

16

5 6 7 8 9 10 11 12 13

-40 C+25 C+85 C

P1d

B (

dBm

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

5 6 7 8 9 10 11 12 13

LORF

RE

TU

RN

LO

SS

(dB

)

FREQUENCY (GHz)

-20

-15

-10

-5

0

5 6 7 8 9 10 11 12 13

+5 dBm+7 dBm+9 dBm

+10 dBm+13 dBm

CO

NV

ER

SIO

N G

AIN

(dB

)

FREQUENCY (GHz)

-25

-20

-15

-10

-5

0

0 1 2 3 4 5 6

IF C

ON

VE

RS

ION

GA

IN (d

B)

RE

TUR

N L

OS

S (d

B)

IF FREQUENCY (GHz)

+13 dBm +10 dBm

Conversion Gain

IF Return Loss

+13 dBm

+10 dBm

-35

-30

-25

-20

-15

-10

-5

0

5 6 7 8 9 10 11 12 13

RF/IFLO/IFLO/RF

ISO

LAT

ION

(dB

)

FREQUENCY (GHz)

OBSOLETE





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HMC220MS8 / 220MS8Ev03.1111


Input IP3 vs. Temperature @ lo = +10 dbm

Input IP2 vs. Temperature @ lo = +10 dbm

Input IP3 vs. lo Drive

Input IP2 vs. lo Drive

v03.1111

10

15

20

25

30

5 6 7 8 9 10 11 12 13

+7 dBm+10 dBm+13 dBm

INP

UT

IP3

(dB

m)

LO FREQUENCY (GHz)

20

25

30

35

40

45

50

5 6 7 8 9 10 11 12 13

-40 C+25 C+85 C

INP

UT

IP2

(dB

m)

LO FREQUENCY (GHz)

0

10

20

30

40

50

5 6 7 8 9 10 11 12 13

+7 dBm+10 dBm+13 dBm

INP

UT

IP2

(dB

m)

LO FREQUENCY (GHz)

10

15

20

25

30

5 6 7 8 9 10 11 12 13

-40 C+25 C+85 C

INP

UT

IP3

(dB

m)

LO FREQUENCY (GHz)

OBSOLETE





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HMC220MS8 / 220MS8Ev03.1111


Absolute Maximum ratingsrF / iF input +13 dbm

lo Drive +27 dbm

storage Temperature -65 to +150 °c

operating Temperature -40 to +85 °c

esD sensitivity (HbM) class 1a

ELECTROSTATIC SENSITIVE DEVICEOBSERVE HANDLING PRECAUTIONS

v03.1111

Mxn Spurious outputs Harmonics of lonlo

mrF 0 1 2 3 4

0 xx 4 12 17 36

1 12 0 29 40 34

2 62 58 45 57 62

3 71 78 73 65 75

4 > 85 > 85 > 85 > 85 > 85

rF = 7.5 gHz @ -10 dbm lo = 7.6 gHz @ +10 dbm All values in dBc below the IF power level (-1RF + 1LO)

lo Freq. (gHz)

nlo spur at rF Port

1 2 3 4

5.5 28 27 34 67

7 29 25 39 61

8.5 26 30 55 60

10 21 43 59 62

11.5 17 51 50 xx

13 13 48 50 xx

lo = +10 dbm Values in dBc below input LO level measured at the RF port.

OBSOLETE





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HMC220MS8 / 220MS8Ev03.1111


v03.1111

outline Drawing

noTes:

1. leaDFraMe MaTerial: coPPer alloY

2. DiMensions are in incHes [MilliMeTers]

3. DiMension Does noT incluDe MolDFlasH oF 0.15mm Per siDe.

4. DiMension Does noT incluDe MolDFlasH oF 0.25mm Per siDe.

5. all grounD leaDs MusT be solDereD To Pcb rF grounD.

Part Number Package body Material lead Finish Msl rating Package Marking [3]

HMc220Ms8 low stress injection Molded Plastic Sn/Pb Solder Msl1 [1] H220xxxx

HMc220Ms8e roHs-compliant low stress injection Molded Plastic 100% matte sn Msl1 [2] H220xxxx

[1] Max peak reflow temperature of 235 °c[2] Max peak reflow temperature of 260 °c[3] 4-Digit lot number XXXX

Package Information

OBSOLETE





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HMC220MS8 / 220MS8Ev03.1111


v03.1111

evaluation Circuit board

item Description

J1 - J3 Pcb Mount sMa rF connector

u1 HMc220Ms8 / HMc220Ms8e Mixer

Pcb [2] 101828 evaluation board

[1] Reference this number when ordering complete evaluation PCB

[2] circuit board Material: rogers 4350

The circuit board used in the application should use rF circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request.

list of Materials for evaluation PCb 101830 [1]OBSOLETE



Documents

hmc220 (v03.1111) - OBSOLETE - analog.com · For price, delivery and to place orders: Hittite Microwave corporation, 2 elizabeth Drive, chelmsford, Ma 01824 Phone: 978-250-3343 Fax: