HMC1086F10 (v06.1017) - Analog Devices

Am

pli

fie

rs

- l

ine

Ar

& p

ow

er

- s

mT

1

HMC1086F10v06.1017

25 WATT FlAnge MounT gAn MMIC PoWeR AMPlIFIeR, 2 - 6 gHz

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.comApplication Support: Phone: 1-800-ANALOG-D

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.

Functional Diagram

FeaturesHigh psat: +44.5 dBm

power Gain at psat: 11 dB

High output ip3: +46 dBm

small signal Gain: 23 dB

supply Voltage: Vdd = +28V @ 1100 mA

50 ohm matched input/output

10-lead flange mount package

Typical ApplicationsThe HmC1086f10 is ideal for:

• Test instrumentation

• General Communications

• radar

• ew/eCm

general DescriptionThe HmC1086f10 is a 25w Gallium nitride (Gan) mmiC power Amplifier which operates between 2 and 6 GHz, and is provided in a 10-lead flange mount package. The amplifier typically provides 23 dB of small signal gain, +44.5 dBm saturated output power, and delivers +46 dBm output ip3 at +33 dBm output power per tone. The amplifier draws 1100 mA quiescent current from a +28V DC supply. The rf i/os are DC blocked and matched to 50 ohms for ease of use.

electrical Specifications, TA = +25° C, Vgg = Vgg1 = Vgg2, Vdd = Vdd1 = Vdd2 = +28V,Idd = 1100 mA [1]

parameter min. Typ. max. min. Typ. max. Units

frequency range 2 - 4 4 - 6 GHz

small signal Gain 20 23 21 24 dB

Gain flatness ±1 ±0.5 dB

Gain Variation over Temperature 0.03 0.03 dB/ °C

input return loss 15 17 dB

output return loss 12 12 dB

output power for 4dB Compression (p4dB) 41 41 dBm

power Gain for 4dB Compression (p4dB) 20 20 dB

saturated output power (psat) 44.5 44.5 dBm

output Third order intercept (ip3) [2] 46 46 dBm

power Added efficiency (pAe) 35 32 %

Total supply Current (id1 + id2) 1100 1100 mA

[1] Adjust Vgg between -8 to 0V to achieve idd = 1100 mA typical.

[2] measurement taken at pout / tone = +33 dBm.

For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106Phone: 781-329-4700 • Order online at www.analog.com

Application Support: Phone: 1-800-ANALOG-D

Am

pli

fie

rs

- l

ine

Ar

& p

ow

er

- s

mT

2

HMC1086F10v06.1017


output Return loss vs. Temperature

gain & Return loss gain vs. Temperature

Input Return loss vs. Temperature

-40

-30

-20

-10

0

10

20

30

1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5

S21 S11 S22

Res

pons

e (d

B)

FREQUENCY (GHz)

10

15

20

25

30

1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5

25 C 85 C -40 C

Gai

n (d

B)

FREQUENCY (GHz)

gain vs. Vdd

10

15

20

25

30

1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5

24V 28V 32V

Gai

n (d

B)

FREQUENCY (GHz)

-40

-35

-30

-25

-20

-15

-10

-5

0

1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5

25 C 85 C -40 C

Ret

urn

Loss

(dB

)

FREQUENCY (GHz)

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

0

1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5

25 C 85 C -40 C

Ret

urn

Loss

(dB

)

FREQUENCY (GHz)

Pout vs. Frequency

25

30

35

40

45

50

2 3 4 5 6

P1dB P4dB Psat

Pou

t (dB

m)

FREQUENCY (GHz)



Am

pli

fie

rs

- l

ine

Ar

& p

ow

er

- s

mT

3

HMC1086F10v06.1017


Psat vs. Temperature Psat vs. Supply Voltage

P4dB vs. Temperature P4dB vs. Supply Voltage

30

35

40

45

50

2 3 4 5 6

+25 C +85 C -40 C

Psa

t (dB

m)

FREQUENCY (GHz)

30

35

40

45

50

2 3 4 5 6

24V 28V 32V

Psa

t (dB

m)

FREQUENCY (GHz)

P4dB vs. Supply Current

30

35

40

45

50

2 3 4 5 6

550 mA 1100 mA 1650 mA

Psa

t (dB

m)

FREQUENCY (GHz)

Psat vs. Supply Current

30

35

40

45

50

2 3 4 5 6

+25 C +85 C -40 C

P4d

B (

dBm

)

FREQUENCY (GHz)

30

35

40

45

50

2 3 4 5 6

24V 28V 32V

P4d

B (

dBm

)

FREQUENCY (GHz)

30

35

40

45

50

2 3 4 5 6

550 mA 1100 mA 1650 mA

P4d

B (

dBm

)

FREQUENCY (GHz)



Am

pli

fie

rs

- l

ine

Ar

& p

ow

er

- s

mT

4

HMC1086F10v06.1017


output IP3 vs. Temperature, Pout/tone = +33 dBm

output IP3 vs. Supply Voltage, Pout/tone = +33 dBm

output IP3 vs. Supply Current, Pout/tone = +33 dBm

40

42

44

46

48

50

2 3 4 5 6

+25 C +85 C -40 C

FREQUENCY (GHz)

IP3

(dB

m)

40

42

44

46

48

50

2 3 4 5 6

24V 28V 32V

FREQUENCY (GHz)

IP3

(dB

m)

40

42

44

46

48

50

2 3 4 5 6

550 mA 1100 mA 1650 mA

FREQUENCY (GHz)

IP3

(dB

m)

output IM3 @ Vdd= +24V output IM3 @ Vdd= +28V

10

20

30

40

50

26 28 30 32 34 36 38 40

2 GHz3 GHz4 GHz

5 GHz6 GHz

Pout/tone(dBm)

IM3

(dB

c)

10

20

30

40

50

26 28 30 32 34 36 38 40

2 GHz3 GHz4 GHz

5 GHz6 GHz

Pout/TONE (dBm)

IM3

(dB

c)

Power gain vs. Frequency

0

5

10

15

20

25

30

2 3 4 5 6

P4dBm Psat

PO

WE

R G

AIN

(dB

)

FREQUENCY (GHz)



Am

pli

fie

rs

- l

ine

Ar

& p

ow

er

- s

mT

5

HMC1086F10v06.1017


Power Compression @ 2 gHz

Power Compression @ 4 gHz Power Compression @ 6 gHz

0

5

10

15

20

25

30

35

40

45

50

900

1110

1320

1530

1740

1950

2160

2370

2580

2790

3000

5 7 9 11 13 15 17 19 21 23 25 27 29 31 33

Idd

Pout Gain PAE

Pou

t(dB

m),

GA

IN(d

B),

PA

E(%

)

Idd (mA

)

INPUT POWER (dBm)

0

5

10

15

20

25

30

35

40

45

50

900

1140

1380

1620

1860

2100

2340

2580

2820

3060

3300

5 7 9 11 13 15 17 19 21 23 25 27 29 31 33

Idd

Pout Gain PAE

Pou

t(dB

m),

GA

IN(d

B),

PA

E(%

)

Idd (mA

)

INPUT POWER (dBm)

0

5

10

15

20

25

30

35

40

45

50

900

1110

1320

1530

1740

1950

2160

2370

2580

2790

3000

5 7 9 11 13 15 17 19 21 23 25 27 29 31 33

Idd

Pout Gain PAE

Pou

t(dB

m),

GA

IN(d

B),

PA

E(%

)

Idd (mA

)

INPUT POWER (dBm)

gain & Power vs.Supply Voltage @ 4 gHz

gain & Power vs.Supply Current @ 4 gHz

20

25

30

35

40

45

50

24 26 28 30 32

GAIN(dB)P4dB(dBm)

Psat(dBm)

Vdd (V)

Gai

n (d

B),

P4d

B (

dBm

), P

sat (

dBm

)

20

25

30

35

40

45

50

550 650 750 850 950 1050 1150 1250 1350 1450 1550 1650

GAIN(dB)P4dB(dBm)

Psat(dBm)

Idd (mA)

Gai

n (d

B),

P4d

B (

dBm

), P

sat (

dBm

)

output IM3 @ Vdd= +32V

10

20

30

40

50

26 28 30 32 34 36 38 40

2 GHz3 GHz4 GHz

5 GHz6 GHz

Pout/TONE (dBm)

IM3

(dB

c)



Am

pli

fie

rs

- l

ine

Ar

& p

ow

er

- s

mT

6

HMC1086F10v06.1017


Reverse Isolation vs. Temperature

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

2 3 4 5 6

+25 C +85 C -40 C

FREQUENCY (GHz)

ISO

LAT

ION

(dB

)

Second Harmonics vs. Temperature

Second Harmonics vs. Supply Voltage Second Harmonics vs. Pin

Power Dissipation

0

10

20

30

40

50

60

70

80

90

2 3 4 5 6

+25 C +85 C -40 C

SE

CO

ND

HA

RM

ON

IC (

dBc)

FREQUENCY(GHz)

0

10

20

30

40

50

60

70

80

90

2 3 4 5 6

24V 28V 32V

SE

CO

ND

HA

RM

ON

IC (

dBc)

FREQUENCY(GHz)

0

10

20

30

40

50

60

70

80

90

2 3 4 5 6

+9 dBm+15 dBm+21 dBm

+27 dBm+33 dBm

SE

CO

ND

HA

RM

ON

IC (

dBc)

FREQUENCY(GHz)

20

25

30

35

40

45

50

55

60

6 9 12 15 18 21 24 27 30 33

2 GHz3 GHz

4 GHz5 GHz

6 GHz

PO

WE

R D

ISS

IPA

TIO

N (

W)

INPUT POWER (dBm)-180

-170

-160

-150

-140

-130

-120

-110

-100

-90

-80

100 1K 10K 100K 1M

PH

AS

E N

OIS

E (

dB

c/H

z)

OFFSET FREQUENCY (Hz)

Additive Phase noise Vs offset Frequency, RF Frequency = 4 gHz, RF Input Power = 27 dBm (P1dB)



Am

pli

fie

rs

- l

ine

Ar

& p

ow

er

- s

mT

7

HMC1086F10v06.1017


Absolute Maximum RatingsDrain Bias Voltage (Vdd) +32 Vdc

Gate Bias Voltage (Vgg) -8 to 0 Vdc

rf input power (rfin) +33 dBm

Channel Temperature 225 °C

maximum pdiss (T = 85 °C) (derate 432 mw/°C above 85 °C)

60.5w

Thermal resistance (channel to flange bottom)

2.31 °C/w

maximum forwardGate Current (mA)

11 mA

maximum Vswr [1] 6:1

storage Temperature -65 to 150 °C [2]

operating Temperature -40 to 85 °C

[1] restricted by maximum power dissipation.

[2] This device is not surface mountable and is not intended nor suitable to be used in a solder reflow process. This device must not be exposed to ambient temperatures above +150°C.

Typical Supply Current vs. Vdd

Vdd (V) idd (mA)

+24 1100

+28 1100

+32 1100

Adjust Vgg to achieve idd = 1100 mA

eleCTrosTATiC sensiTiVe DeViCeoBserVe HAnDlinG preCAUTions

Amplifier Turn-on Procedure:1.) set Vgg to -5V.

2.) set Vdd to +28V.

3.) ramp gate voltage until quiescent drain current = 1100 mA.

4.) Apply rf input power.

Amplifier Turn-off Procedure:1.) remove rf input power.

2.) set Vgg to -5V.

3.) set Vdd to 0V.

4.) set Vgg to 0V.



Am

pli

fie

rs

- l

ine

Ar

& p

ow

er

- s

mT

8

HMC1086F10v06.1017


outline Drawing

Package Informationpart number package Body material lead finish msl rating package marking [1]

HmC1086f10 Copper 15 Tungston 85 niAu n/A [2] H1086XXXX

[1] 4-Digit lot number XXXX[2] This device is not rated for moisture sensitivity level. The HmC1086f10 is a non-hermetic, air cavity device which is not surface mountable

and is not intended nor suitable to be used in a solder reflow process.

10-Lead Ceramic Leaded Chip Carrier [LDCC](EJ-10-1)

Dimensions shown in inches

TOP VIEW

0.450

0.682

0.010

0.576

0.100

0.053

0.050

0.342

0.350 SQ0.388

0.288

0.138

0.116 PIN 1INDICATOR

1

5

10

6

Ø 0.070

0.053

0.075

0.042

0.025SIDE VIEW

04-1

4-20

16-A

PKG

-005

116

10-lead Ceramic leaded Chip Carrier [lDCC](eJ-10-1)

Dimensions shown in inches



Am

pli

fie

rs

- l

ine

Ar

& p

ow

er

- s

mT

9

HMC1086F10v06.1017


pin number function Description interface schematic

1, 5 Vgg2 Gate control voltage for second stage.

2, 4 Vgg1 Gate control voltage for first stage.

3 rfin This pin is DC coupled and matched to 50 ohms.

6, 10 Vdd1,2 Drain bias for first and second stage

7, 9 nC These pins are not connected internally.

8 rfoUT This pad is rf coupled and matched to 50 ohms.

package Base

GnDThe package base must be mounted to a suitable heat

sink for rf & DC ground. recommended mounting screws are #0-80 socket cap screws.

Pin Descriptions



Am

pli

fie

rs

- l

ine

Ar

& p

ow

er

- s

mT

10

HMC1086F10v06.1017


Application Circuit



Am

pli

fie

rs

- l

ine

Ar

& p

ow

er

- s

mT

11

HMC1086F10v06.1017


evaluation PCB

evaluation order Informationitem Contents part number

evaluation pCB HmC1086f10 evaluation pCB eVAl01-HmC1086f10 [1]

[1] reference this number when ordering evaluation pCB

list of Materials for evaluation PCB eVAl01-HMC1086F10

item Description

J2, J3 sri K Connector

J1 DC Connector

J4, J5 preform jumpers

C1 - C6 1 uf Capacitor, 0602 pkg.

C7 - C8 10 uf Capacitor, 1210 pkg.

U1 HmC1086f10

pCB [1] 600-00619-00 evaluation pCB

[1] Circuit Board material: rogers 4350 or Arlon 25fr

The circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Analog Devices, upon request.



Am

pli

fie

rs

- l

ine

Ar

& p

ow

er

- s

mT

12

HMC1086F10v06.1017


notes:

Documents

HMC1086F10 (v06.1017) - Analog Devices