Hasselt Diamond Workshop 2018 SBDD XXIIIDuring three full days, SBDD XXIII will address recent progress in a variety of topics ranging from fundamental material science to applications,

Programme http://www.uhasselt.be/sbdd

March 7 – 9, 2018 cultuurcentrum Hasselt (Cultural Centre), Hasselt, Belgium

During three full days, SBDD XXIII will address recent progress in a variety of topics ranging from fundamental material science to applications, focusing on CVD diamond.

Tuesday, March 6, 2018

18:00 – 19:00 Registration at the Express by Holiday Inn & Reception.

Wednesday, March 7, 2018

08:20 – 08:50 Registration at the cultuurcentrum Hasselt.

08:50 – 09:00 Opening “Hasselt Diamond Workshop 2018 – SBDD XXIII”.

Session 1 Growth & Doping Chair: Paul W. May, University of Bristol, U.K. 09:00 1.1 (Invited) Heteroepitaxial diamond wafers - a material for electronic devices? M. Schreck

1, M. Mayr

1, M. Traeger

2, M. Kiš

2, P. Ščajev

3, A.F. Sartori

5, S. Gsell

4, M. Fischer

4, B. Gallheber

1

1Institut für Physik, Universität Augsburg, Augsburg, Germany

2GSI Helmholtz-Zentrum für Schwerionenforschung, Darmstadt,

Germany, 3Institute of Photonics and Nanotechnology, Vilnius University, Vilnius, Lithuania,

4Augsburg Diamond Technology GmbH,

Augsburg, Germany, 5Delft University of Technology, Delft, Netherlands

09:30 1.2 Heavily phosphorus doping of diamond grown on thick {111} CVD homoepitaxial diamond substrates S. Koizumi, T. Teraji, T. Shimaoka National Institute for Materials Science (NIMS), Japan 9:50 1.3 Boron doping proximity effects on dislocation generation during non-planar MPCVD homoepitaxial diamond growth F. Lloret

1, A. Fiori

2, M. Gutiérrez

1, M.P. Villar

1, D. Eon

3, E. Bustarret

3, D. Araujo

1

1Departamento Ciencias de los Materiales, Universidad de Cádiz, Cádiz, Spain,

2National Institute for Materials Science (NIMS), Japan

3Institut Néel, CNRS, Université Grenoble-Alpes, Grenoble, France

10:10 1.4 (Invited) CMP effect of diamond epitaxial growth on subsurface damage S.W. Kim, D. Fujii, K. Oyama, Y. Kimura, H. Takeda Namiki Precision Jewel Co., Ltd., Tokyo, Japan

Hasselt Diamond Workshop 2018

SBDD XXIII

http://toerisme.hasselt.be/en/homepage/index.html

10:40 Coffee Break (Grand Banquet Hall) Session 2 Electrical Transport Chair: Julien Barjon, Université de Versailles Saint-Quentin-en-Yvelines, France 11:20 2.1 Zeeman interaction in two-dimensional surface-doped diamond G. Akhgar

1, D.L. Creedon

2, L.H. Willems van Beveren

3, A. Stacey

2, D. Hoxley

1, J.C. McCallum

2, L. Ley

1,4, A.R. Hamilton

5, C.I. Pakes

1

1Department of Chemistry and Physics, La Trobe University, Bundoora, Australia,

2School of Physics, The University of Melbourne,

Melbourne, Australia, 3National Measurement Institute, Lindfield, Australia,

4Institute of Condensed Matter Physics, Universität

Erlangen-Nürnberg, Erlangen, Germany, 5School of Physics, University of New South Wales, Sydney, Australia

11:40 2.2 Time-resolved spectroscopy on intrinsic diamond for reassessment of the exciton binding energy N. Naka

1, S. Hamabata

2, K. Konishi

1, J. H. Kaneko

3, I. Akimoto

2

1Department of Physics, Kyoto University, Kyoto, Japan,

2Department of Materials Science and Chemistry, Wakayama University,

Wakayama, Japan, 3Graduate School of Engineering, Hokkaido University, Sapporo, Japan

12:00 2.3 New perspectives on the influence of granularity on the superconductivity of nanocrystalline boron doped diamond G.M. Klemencic

1, J.M. Fellows

2, J.M. Werrell

1, S. Mandal

1, S.R. Giblin

1, R.A. Smith

3, O.A. Williams

1

1School of Physics and Astronomy, Cardiff University, Cardiff, U.K.,

2School of Physics, HH Wills Physics Laboratory, University of

Bristol, Bristol, U.K., 3School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham, U.K.

12:20 SBDD XXIII Group Photo (Front entrance ccHa) 12:30 Lunch (Grand Banquet Hall) Session 3 Biomedical Applications Chair: Philippe Bergonzo, CEA/Saclay, France 14:10 3.1 (Invited) Intraneuronal transport abnormalities revealed by optically active photostable nanoparticle tracking S. Haziza, F. Terras, Q.L. Chou, F. Marquier, M. Simonneau, F. Treussart Laboratoire Aimé Cotton, CNRS, Université Paris Sud and ENS Cachan, Université Paris-Saclay, Orsay, France 14:40 3.2 Influencing the uptake mechanisms of nanodiamonds entering cells A. Morita, K. van der Laan, S.R. Hemelaar, M. Chipaux, R. Schirhagl Department of Biomedical Engineering, Groningen University, University Medical Center Groningen, Groningen Netherlands. 15:00 3.3 Studies of 'black diamond' as a material for antibacterial surfaces P.W. May

1, P. Taylor

1, M. Clegg

1, C.C. Welch

2, G. Hazell

3, B. Su

3,

1School of Chemistry, University of Bristol, Bristol, U.K,

.2Oxford Instruments Plasma Technology, Bristol, U.K.,

3School of Dental &

Oral Hygiene, University of Bristol, Bristol, U.K.

15:20 3.4 A rapid-response determination of influenza virus using antibody modified boron-doped diamond D. Nidzworski

1,2,3, K. Siuzdak

4, P. Niedziałkowski

5, R. Bogdanowicz

6, M. Sobaszek

6, J. Ryl

7, P. Weiher

1, M. Sawczak

4, E. Wnuk

5,

W.A. Goddard8, A. Jaramillo-Botero

8, T. Ossowski

5

1Institute of Biotechnology and Molecular Medicine, Gdańsk, Poland,

2SensDx Ltd, Warsaw, Poland,

3Department of

Recombinant Vaccine, Intercollegiate Faculty of Biotechnology, University of Gdańsk and Medical University of Gdańsk, Poland,

4Polish Academy of Sciences, Szewalski Institute of Fluid-Flow Machinery, Gdańsk, Poland,

5Department of Analytical

Chemistry, Faculty of Chemistry, University of Gdansk, Gdansk, Poland, 6Department of Metrology and Optoelectronics, Faculty

of Electronics, Telecommunications and Informatics, Gdansk University of Technology, Gdansk, Poland, 7Department of

Electrochemistry, Corrosion and Materials Engineering, Faculty of Chemistry, Gdansk University of Technology, Gdansk, Poland,

8Materials and Process Simulation Center, California Institute of Technology, California, U.S.A.

15:40 Coffee Break (Grand Banquet Hall) Session 4 Surface Conductivity Chair: Makoto Kasu, Saga University, Japan 16:20 4.1 (Invited) Controlling the stability of diamond's surface conductivity M.W. Geis

1, T.C. Wade

1, C.H. Wuorio

1, T.H. Fedynyshyn

1, M.E. Plaut

1, S.A. Vitale

1, J.O. Varghese

1, T.A. Grotjohn

2, R.J. Nemanich

3,

M.A. Hollis1

1Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, U.S.A.,

2Department of Electrical and Computer

Engineering, Michigan State University, East Lansing, MI, U.S.A., 3Department of Physics, Arizona State University, Tempe, AZ, U.S.A.

16:50 4.2 Improvement of hydrogen terminated diamond FET performance by vacuum annealing and surface transfer doping oxide deposition D.A. Macdonald

1, K.G. Crawford

1, R. Issaoui

2, A. Tallaire

2, D.A.J. Moran

1

1School of Engineering, University of Glasgow, Glasgow, U.K.,

2Université Paris 13, LSPM-CNRS, Villetaneuse, France

17:10 4.3 Group IV terminations of (100) and (111) diamond surfaces M.J. Sear

1, A.K. Schenk

2, A. Tadich

3, Al.D. Stacey

4, C.I. Pakes

1

1Department of Chemistry and Physics, La Trobe University, Bundoora, Australia,

2Center for Quantum Spintronics, Department of

Physics, Norwegian University of Science and Technology, Trondheim, Norway, 3Australian Synchrotron, Clayton, Australia.,

4School

of Physics, The University of Melbourne, Melbourne, Australia 17:30 4.4 A theoretical study of negative electron affinity from aluminium on the diamond surface M.C. James

1,2, P.W. May

1, N.L. Allan

1

1School of Chemistry, University of Bristol, Bristol, U.K.,

2School of Physics, HH Wills Physics Laboratory, University of Bristol, Bristol,

U.K.

Session 5 Posters I & Reception offered by . Chairs: Anke Krüger, Julius-Maximilians-Universität Würzburg, Germany; Julien Pernot, CNRS/Université Grenoble Alpes-Institut Néel, France; Matthias Schreck, Universität Augsburg, Germany

17:50 – 19:50 (Grand & Small Banquet Hall)

5.1 Tribological and proteomic studies on ultrananocrystalline diamond layers as implant coating D. Merker

1, S. Stateva

2, R. Merz

3, M. Kopnarski

3, J.P. Reithmaier

1, M. Apostolova

2, C. Popov

1

1Institute of Nanostructure Technologies and Analytics (INA), University of Kassel, Kassel, Germany,

2Roumen Tsanev Institute of

Molecular Biology, Bulgarian Academy of Science, Sofia, Bulgaria, 3Institut für Oberflächen- und Schichtanalytik GmbH, University of

Kaiserslautern, Kaiserslautern, Germany

5.2 Nanostructured modified ultrananocrystalline diamond surfaces as immobilization support for lipases D. Merker

1, M. Kesper

2, L.L. Kailing

2, F. Herberg

2, J.P. Reithmaier

1, I. Pavlidis

2, C. Popov

1


2Dept. of Biochemistry, Center for

Interdisciplinary Nanostructure Science and Technology, University of Kassel, Kassel, Germany

5.3 Application of nitrogen-doped diamond film in sensor of hemoglobin concentration M. Kosowska

1, D. Majchrowicz

1, K.J. Sankaran

2,3, P. Struk

4, M. Wąsowicz

5, M. Sobaszek

1, M. Kulka

6, K. Haenen

2,3, M. Jędrzejewska-

Szczerska1

1Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of

Technology, Gdańsk, 2Institute for Materials Research (IMO), Hasselt University, Diepenbeek, Belgium,

3IMOMEC, IMEC vzw,

Diepenbeek, Belgium, 4Department of Optoelectronics, Faculty of Electrical Engineering, Silesian University of Technology, Gliwice,

Poland, 5Department of Morphological Sciences, Faculty of Veterinary Medicine, Warsaw University of Life Sciences, Warszawa,

Poland, 6Department of Pathology and Veterinary Diagnostics, Faculty of Veterinary Medicine, Warsaw University of Life Sciences,

Warszawa, Poland

5.4 Bio-imaging applications of perfectly oriented high-density NV centres in diamond CVD film Y. Hatano

1, T. Sekiguchi

1, T. Iwasaki

2, M. Hatano

2, Y. Harada

1

1Institute for Protein Research, Osaka University, Osaka, Japan,

2Tokyo Institute of Technology, Tokyo, Japan

5.5 Influence of intermolecular bonds of environment on the fluorescence properties of nanodiamonds in suspensions S.A. Burikov

1, A.M. Vervald

1, K.A. Laptinskiy

1, O.A. Shenderova

2, I.I. Vlasov

3, T.A. Dolenko

1

1Department of Physics, Moscow M.V. Lomonosov State University, Moscow, Russia,

2Adámas Nanotechnologies, Raleigh, NC, U.S.A.,

3General Physics Institute, Moscow, Russia

5.6 Nanothermometry performed with fluorescent nanodiamonds J. Ramírez-Hernández

1, M. Acosta-Elías

1, E. Silva-Campa

1, J.A. Sarabia-Sainz

1, A.J. Burgara-Estrella

1, A. Angulo-Molina

2, B. Castaneda

3,

S. Navarro-Espinoza1, D. Soto-Puebla

1, K.J. Santacruz-Gómez

3, M. Barboza-Flores

1, J. García-Solé

4, M. Pedroza-Montero

1

1Departmento de Investigación en Física, Universidad de Sonora, Hermosillo, Sonora, Mexico,

2Departmento de Ciencias Químico-

Biológicas, Universidad de Sonora, Hermosillo, Sonora, Mexico, 3Departmento de Física, Universidad de Sonora, Hermosillo, Sonora,

Mexico, 4Departmento de Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, Madrid, España.

5.7 Hybrid diamond-gold nanostructures for biomedical applications S. Pedroso-Santana

1, N. Fleitas-Salazar

1, J.A. Sarabia-Sainz

1, E. Silva-Campa

1, A. Angulo-Molina

2, B. Castaneda

3, S. Navarro-Espinoza

1,

D, Soto-Puebla1, R. Meléndrez-Amavizca

1, R. Riera

1, K. Santacruz-Gómez

3, M. Pedroza-Montero

1

1Departmento de Investigación en Física, Universidad de Sonora, Hermosillo, Sonora, Mexico,

2Departmento de Ciencias Químico-

Biológicas, Universidad de Sonora, Hermosillo, Sonora, Mexico, 3Departmento de Física, Universidad de Sonora, Hermosillo, Sonora,

Mexico

5.8 Internalization study of rounded nanodiamonds in breast cancer cells using TEM and Raman imaging M. Gulka

1,2, B. Varga

3,4, H. Salehi

5, E. Middendorp

5, T. Cloitre

4, F.J.G. Cuisinier

5, P. Cígler

6, M. Nesládek

2, C. Gergely

4

1CTU in Prague, Faculty of Biomedical Engineering, Kladno, Czech Republic,

2Institute for Materials Research (IMO), IMOMEC, IMEC

vzw, Hasselt University, Diepenbeek, Belgium, 3Institute of Biophysics, Biological Research Centre, Szeged, Hungary,

4Laboratoire

Charles Coulomb (L2C), CNRS-Université de Montpellier, Montpellier, France, 5Bio-engineering Nanoscience Laboratory, Université de

Montpellier, Montpellier, France, 6Institute of Organic Chemistry and Biochemistry AS CR, Prague, Czech Republic

5.9 Following the movements of nanodiamond in living cells L. Nie, H. Thamir, S.R. Hemelaar, R. Schirhagl Department of Biomedical Engineering, Groningen University, University Medical Center Groningen, Groningen Netherlands.

5.10 On the cellular response of HeLa cells to fluorescent nanodiamonds and the uptake of nanodiamonds in yeast cells S.R. Hemelaar

1, K.J. van der Laan

1, S.R. Hinterding

1, M.V. Koot

1, E. Ellermann

1, B. Saspaanithy

1, D. Roig

1, S.R.M. L’Hommelet

1, F.P.

Perona-Martinez1, D. Novarina

2, H. Takahashi

3, M. Chang

2, R. Schirhagl

1

1Department of Biomedical Engineering, University of Groningen, Groningen, Netherlands,

2European Research Institute for the

Biology of Ageing, University of Groningen, University Medical Center Groningen, Groningen, Netherlands, 3Department of Physics,

ETH-Zurich, Zurich, Switzerland

5.11 Controlled surface modification of detonation nanodiamond with rare earth ions E.B. Iudina

1, A.E. Aleksenskiy

1, I.G. Fomina

2, A.V. Shvidchenko

1, A.Y. Vul

1

1Ioffe

Institute, Saint-Petersburg, Russia,

2IGIC RAS, Moscow, Russia

5.12 Properties and preparation fluorescent suspensions with nanodiamonds containing NV color centers M. Ficek

1, M. Głowacki

1, K. Sycz

2, M. Mrózek

2, W. Gawlik

2, R. Bogdanowicz

1

1Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, Gdansk, Poland,

2Institute of Physics,

Jagiellonian University, Kraków, Poland

5.13 Enhancing transparency of highly electroactive BNCD-MEAs A. Pasquarelli

1, X. Wang

2

1Institute of Electron Devices and Circuits, Ulm University, Ulm Germany,

2State Key Laboratory of Bioelectronics (Chien-Shiung Wu

Laboratory), School of Biological Science and Medical Engineering, Southeast University, Nanjing, China

5.14 Electrochemical oxidation of raw landfill leachates on carbon based electrodes M. Sobaszek

1, S. Fudala-Książek

2, A. Łuczkiewicz

2, R. Bogdanowicz

1

1Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, Gdansk, Poland,

2Faculty of Civil and

Environmental Engineering, Gdansk University of Technology, Gdansk, Poland, 3Department of Environmental Technology, Faculty of

Chemistry, University of Gdansk, Gdansk, Poland

5.15 The influence of anodic polarization on electrochemically active surface area heterogeneity of highly boron-doped diamond electrodes J. Ryl

1, A. Zielinski

1, L. Burczyk

1, A. Franczak

1, M. Sobaszek

2, R. Bogdanowicz

2

1Department of Electrochemistry, Corrosion and Materials Engineering, Faculty of Chemistry, Gdansk University of Technology,

Gdansk, Poland, 2Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunication and Informatics, Gdansk

University of Technology, Gdansk, Poland

5.16 Laser-induced periodic surface structures (LIPSS) on heavily boron-doped diamond: electrode performance for electrochemical sensing and cell stimulation A.F. Sartori

1, S. Orlando

2, A. Bellucci

2, D.M. Trucchi

2, S. Abrahami

3, T. Boehme

4,5, T. Hantschel

4, W. Vandervorst

4,5, J.G. Buijnsters

1

1Department of Precision and Microsystems Engineering, Delft University of Technology, Delft, Netherlands,

2Istituto di Struttura

della Materia (ISM), Unit of Montelibretti, Consiglio Nazionale delle Ricerche (CNR), Rome, Italy, 3Department of Materials and

Chemistry, Vrije Universiteit Brussel, Brussels, Belgium, 4Imec, Leuven, Belgium,

5IKS-Department of Physics, KU Leuven, Leuven,

Belgium

5.17 A comparison of gold nanoparticle dispersions on a boron doped diamond electrode for trace mercury detection M. McLaughlin, R.B. Jackman London Centre for Nanotechnology and Department of Electronic and Electrical Engineering, University College London (UCL), London, U.K.

5.18 Covalent functionalization of boron-doped diamond via Sonogashira cross-coupling towards hybrid photovoltaics J. Raymakers

1, H. Krysova

2, A. Artemenko

3, S.S. Nicley

1, J. Čermák

3, P. Verstappen

1, D. Miliaieva

3, S. Gielen

1, A. Kromka

3, K. Haenen

1,

L. Kavan2, W. Maes

1, B. Rezek

3,4

1Institute for Materials Research (IMO), IMOMEC, IMEC vzw, Hasselt University, Diepenbeek, Belgium,

2J. Heyrovsky Institute of

Physical Chemistry, CAS, Prague, Czech Republic, 3Institute of Physics, CAS, Prague, Czech Republic,

4Faculty of Electrical Engineering,

Czech Technical University in Prague, Prague, Czech Republic

5.19 Boron doped diamond: surface chemistry and its verification with p-type solar cell J. Bartoň

1,2, H. Krýsová

3, A. Taylor

4, J. Vávra

1, P. Cígler

1, V. Mortet

4, L. Kavan

3

1Institute of Organic Chemistry and Biochemistry of the Czech Academy of Sciences, Prague, Czech Republic,

2Charles University,

Faculty of Science, Department of Inorganic Chemistry, Prague, Czech Republic, 3J Heyrovský Institute of Physical Chemistry of the

Czech Academy of Sciences, Prague, Czech Republic, 4Institute of Physics of the Czech Academy of Sciences, Prague, Czech Republic

5.20 Tin-vacancy color centers in diamond T. Iwasaki

1, Y. Miyamoto

2, T. Taniguchi

3, P. Siyushev

4, M.H. Metsch

4, F. Jelezko

4,5, M. Hatano

1

1Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan,

2Research Center for

Computational Design of Advanced Functional Materials, National Institute for Advanced Industrial Science and Technology (AIST), Tsukuba, Japan,

3Research Center for Functional Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan,

4Institute

for Quantum Optics, Universität Ulm, Ulm, Germany, 5Center for Integrated Quantum Science and Technology (IQST), Universität

Ulm, Ulm, Germany

5.21 On the route to produce Ni and Gd color centers in CVD-grown diamond R. Carcione

1,2, S. Politi

1, E. Tamburri

1,3, M. Angjellari

1,3, R. Bartali

2, M. Fedrizzi

2, V. Micheli

2, G. Pepponi

2 and M.L. Terranova

1,3

1Dipartimento di Scienze e Tecnologie Chimiche, University of Rome, Tor Vergata, Rome, Italy,

2Fondazione Bruno Kessler, Trento,

Italy, 3Nanoshare s.r.l., Rome, Italy

5.22 Doping diamond with luminescent centres: the electronic structure of Ge and Eu defect-complexes D.E.P. Vanpoucke

1,2, S.S. Nicley

1,2, E. Bourgeois

1,2, M. Nesládek

1,2, K.Haenen

1,2

1Institute for Materials Research (IMO), Hasselt University, Diepenbeek, Belgium,

2IMOMEC, IMEC vzw, Diepenbeek, Belgium

5.23 Possible coupling of implanted europium to nitrogen vacancy centres in diamond R. John, J. Meijer Department of Nuclear Solid State Physics, Felix Bloch Institute for Solid State Physics, Universität Leipzig

5.24 Thermal stability of perfectly aligned NV centers for high sensitive magnetometers H. Ozawa

1, H. Ishiwata

1,2, T. Iwasaki

1, M. Hatano

1

1Department of Electrical and Electronics, Tokyo Institute of Technology, Meguro, Japan,

2Presto, JST, Chiyoda, Japan

5.25 Quantum magnetic sensing of large detection volume of nitrogen-vacancy centers with enhanced microwave irradiation Y. Masuyama

1, K. Mizuno

1, H. Ozawa

1, Y. Hatano

2, T. Iwasaki

1, M. Hatano

1

1Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan,

2Institute for Protein Research,

Osaka University, Osaka, Japan

5.26 Optical magnetic microscopy on a diamond chip A. Jarmola

1,2, I. Fescenko

3, A. Laraoui

3, J. Smits

3, N. Mosavian

3, P. Kehayias

3, J. Seto

4, L. Bougas

5, V. Acosta

3

1ODMR Technologies Inc., El Cerrito, CA, U.S.A.,

2Department of Physics, University of California, Berkeley, CA, U.S.A.,

3Center for High

Technology Materials, Department of Physics and Astronomy, University of New Mexico, Albuquerque, NM, U.S.A., 4Department of

Bioengineering and Therapeutic Sciences, University of California – San Francisco, San Francisco, CA, U.S.A., 5Johannes Gutenberg

Universität Mainz, Mainz, Germany

5.27 Spin properties of diamond plates with a high concentration of NV-centers O.R. Rubinas

1,2,4, V.V. Vorobyov

1,2,4, V.V. Soshenko

1,2,4, V.N. Sorokin

2,4, V.G. Vins

3, A.V. Akimov

5

1Moscow Institute of Physics and Technology, Institutskiy Pereulok, Dolgoprudny, Russia,

2P.N. Lebedev Physical Institute of the

Russian Academy of Science, Leninskiy Prospect, Moscow, Russia, 3LLS Velman, Zelenaya Gorka, Novosibirsk, Russia,

4Spin Sensor

Technology, Leninskiy Prospect, Moscow, Russia, 5Texas A&M University, College Station, TX, U.S.A.

5.28 CVD grown nitrogen-vacancy centers in isotopically controlled <100> and <111> oriented diamond C. Osterkamp, P. Balasubramanian, B. Naydenov, F. Jelezko Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQST), Universität Ulm, Ulm, Germany,

5.29 Towards optimized scanning probe sensors based on shallow nitrogen vacancy color centers M. Challier

1, R. Nelz

1, P. Fuchs

1, B. Kiendl

2, F. Müller

1, S. Grandthyll

1, A. Krueger

2 and E. Neu

1

1Faculty of Natural Sciences and Technology, Experimental Physics, Saarland University, Saarbrücken, Germany,

2Institut für

Organische Chemie, Universität Würzburg, Würzburg, Germany

5.30 Precision measurements of electric fields using NV centers in diamond J. Michl

1, J. Steiner

1, T. Wolf

1, P. Neumann

1, A. Denisenko

1, J. Isoya

2, J. Wrachtrup

1

13rd Physical Institute, University of Stuttgart, Stuttgart, Germany,

2Research Center for Knowledge Communities, University of

Tsukuba, Tsukuba, Japan

5.31 NV-center formation in single crystal diamond at different CVD growth conditions M.A. Lobaev

1, A.M. Gorbachev

1, S.A. Bogdanov

1, A.L. Vikharev

1, D.B. Radishev

1, V.A. Isaev

1, M.N. Drozdov

2

1Institute of Applied Physics, RAS, Nizhny Novgorod, Russia,

2 Institute for Physics of Microstructures, RAS, Nizhny Novgorod, Russia

5.32 Optical thermometry of nitrogen-vacancy centers in diamond T.F. Segawa

1,2, A. Vutha

3, D. Terada

1, R. Tanabe

1, R. Igarashi

1, M. Shirakawa

1

1Department of Molecular Engineering, Kyoto University, Kyoto, Japan,

2Department of Physics, ETH Zürich, Zurich, Switzerland,

3Department of Physics, University of Toronto, Toronto, Canada

5.33 Low strain diamond nanostructures for quantum optics experiments L. Nicolas, T. Delord, G. Hétet Laboratoire Pierre Aigrain, Ecole normale supérieure, PSL Research University, CNRS, Université Pierre et Marie Curie, Sorbonne Universités, Université Paris Diderot, Sorbonne Paris-Cité, Paris, France.

5.34 Superinjection in diamond diodes: bright electroluminescence at room temperature well above the doping limit I.A. Khramtsov, D.Y. Fedyanin Laboratory of Nanooptics and Plasmonics, Moscow Institute of Physics and Technology, Moscow, Russia

5.35 Structural composition and luminescent properties of nanodiamonds produced from adamantane O.S. Kudryavtsev

1, A.M. Romshin

1,3, E.A. Ekimov

1,2, I.I. Vlasov

1

1General Physics Institute, Moscow, Russia,

2Institute for High Pressure Physics, Moscow, Russia,

3Faculty of Physics, Lomonosov

Moscow State University, Moscow, Russia

5.36 On SiV center optical properties in ultrasmall nanodiamonds S.V. Bolshedvorskii

1,2,3, V.V. Vorobyov

1,3, V.V. Soshenko

1,3, A.I. Zeleneev

2,4, V.A. Davydov

5, V.N. Sorokin

3,4, A.N. Smolyaninov

1, A.V.

Akimov6,3,4

1Spin Sensor Technology, Moscow, Russia,

2Moscow Institute of Physics and Technology, Dolgoprudny, Moscow region, Russia,

3P.N.

Lebedev Physical Institute of the Russian Academy of Science, Moscow, Russia, 4Russian Quantum Center, Moscow, Russia,

5L.F.

Vereschagin Institute for High Pressure Physics, Troitsk, Moscow, Russia, 6Texas A&M University, TX, U.S.A.

5.37 Electronic structure of SiV(0) in diamond G. Thiering

1,2, A. Gali

1,2

1Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, Budapest, Hungary,

2Department of Atomic Physics, Budapest University of Technology and Economics, Budapest, Hungary

5.38 Towards efficient quantum source: epitaxially grown diamond nano-pyramids with silicon-vacancy centers T. Jaffe

1, N. Felgen

2, L. Gal

1, L. Kornblum

1, C. Popov

2, J.P. Reithmaier

2, M. Orenstein

1

1Department of Electrical Engineering, Technion - Israel Institute of Technology, Israel,

2Institute of Nanostructure Technologies and

Analytics, University of Kassel

5.39 Homoepitaxial diamond structures with incorporated SiV centers N. Felgen

1, B. Naydenov

2, F. Jelezko

2, J.P. Reithmaier

1, C. Popov

1


2Institute for Quantum Optics

and Center for Integrated Quantum Science and Technology (IQST), Universität Ulm, Ulm, Germany

5.40 SiV color centers in epitaxial CVD diamond doped from silane with isotopically enriched silicon V.G. Ralchenko

1,2,3, V.S. Sedov

1,2, A.P. Bolshakov

1,2,3, A.A. Khomich

1,4, V.S. Krivobok

5, S.N. Nikolaev

5, S. Bolshedvorsky

5, E.V. Bushuev

1,

K.N. Boldyrev6

1General Physics Institute RAS, Moscow, Russia,

2National Research Nuclear University MEPhI, Moscow, Russia,

3Harbin Institute of

Technology, Harbin, P.R. China, 5Institute of Radio Engineering and Electronics RAS, Fryazino, Russia,

5Lebedev Physical Institute RAS,

Moscow, Russia, 6Institute of Spectroscopy RAS, Troitsk, Moscow, Russia

5.41 EPR investigation of the neutral germanium-vacancy center in diamond A.Y. Komarovskikh

1,2, V.A. Nadolinny

1,2, Y.N. Palyanov

2,3, I.N. Kupriyanov

2,3

1Nikolaev Institute of Inorganic Chemistry SBRAS, Novosibirsk, Russia,

2Sobolev Institute of Geology and Mineralogy SBRAS,

Novosibirsk, Russia, 3Department of Geology and Geophysics, Novosibirsk State University, Novosibirsk, Russia

5.42 Time-resolved luminescence spectroscopy of the 499 nm spectral feature in synthetic CVD single crystal diamond A. Wassell

1, C. McGuinness

2, C. Hodges

1, D. Fisher, P. Martineau

2, M.E. Newton

3, S.A. Lynch

1


2De Beers Technologies, Maidenhead, U.K.,

3Department of

Physics, University of Warwick, Coventry, U.K.

5.43 Identification of hydrogen-related defects in diamond E. Nako

1, B.L. Green

1, B.L. Cann

2, M.E. Newton

1

1Department of Physics, University of Warwick, Coventry, U.K.,

2De Beers Technologies, Maidenhead, Berkshire, U.K.

5.44 Diamond-based VECSELS for energy and data transmission A. Mereuta

1, E. Kapon

1, A. Caliman

2, N. Malpiece

2, M. Naamoun

2, D. Rats

2, P. Gallo

2

1Laboratory of Physics of Nanostructures, EPFL, Lausanne, Switzerland,

2LakeDiamond SA, Yverdon-les-Bains, Switzerland

5.45 Thermionic, field and photo-electron emission studies of diamond G. Wan

1, A. Croot

1,2, M. Cattelan

2, N. Fox

1,2

1School of Physics, University of Bristol, Bristol, U.K.,


5.46 Direct observation of electron emission from CVD diamond grain boundaries by tunnelling atomic force microscopy independent of surface morphology R. Harniman

1, P.W. May

1, O.J. Fox

1,2


2Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot,

U.K.

5.47 High performance electron emission from cactus-like diamond nanostructures K.J. Sankaran

1,2, M. Ficek

3, C.J. Yeh

4, K. Srinivasu

4, R. Bogdanowicz

3, K.C. Leou

4, I.N. Lin

5, K. Haenen

1,2

1Institute for Materials Research (IMO), Hasselt University, Belgium.,

2IMOMEC, IMEC vzw, Belgium.,

3Department of Metrology and

Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, Gdansk, Poland., 4Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan.,

5Department of Physics, Tamkang

University, Taiwan

5.48 Renewable energy – low work function diamond surfaces for use in thermionic devices F. Fogarty

1, P.W. May

1, N.A. Fox

1,2


2School of Physics, University of Bristol, Bristol, U.K.

5.49 Diamond pn diodes for charged-particle measurement T. Shimaoka

1, S. Koizumi

1, M. Tanaka

2

1National Institute for Materials Science (NIMS), Tsukuba, Japan,

2High Energy Accelerator Research Organization (KEK), Tsukuba,

Japan

5.50 More detailed analysis of soft-x-ray photon detections using high-quality undoped homoepitaxial CVD diamond layers grown on HPHT Ib substrate T. Ito

1, H. Matsubara

1, O. Maida

1, Y. Takeda

2, Y. Saitoh

2

1Graduate School of Engineering, Osaka University, Osaka Japan,

2Material Sciences Research Center, Japan Atomic Energy Agency,

Hyogo, Japan

5.51 X –ray thermoluminescence dosimetry characterization of commercially available CVD diamond M.I. Gil-Tolano, R. Meléndrez, S. Alvarez-Garcia, D. Soto-Puebla, V. Chernov, M. Barboza-Flores

Departamento de Investigación en Física, Universidad de Sonora, Sonora, México

5.52 Effect of particle size on thermoluminescence properties of beta irradiated HPHT synthetic nanodiamond C.F. Ruiz-Valdez

1, V. Chernov

2, R. Meléndrez

2, S. Álvarez-García

2, K. Santacruz-Gómez

1, D. Berman-Mendoza

2, M. Barboza-Flores

2

1Departmento de Física, Universidad de Sonora, Hermosillo, Sonora, México,

2Departamento de Investigación en Física, Universidad

de Sonora, Hermosillo, Sonora, México

5.53 A diamond-based beam tagging hodoscope for ion therapy monitoring. M.L. Gallin-Martel

1, L. Abbassi

2, A. Bes

1, G. Bosson

1, J. Collot

1, T. Crozes

2, S. Curtoni

1, D. Dauvergne

1, W. De Nolf

3, M. Fontana

4, L.

Gallin-Martel1, A. Ghimouz

1, J.Y. Hostachy

1, A. Lacoste

1, S. Marcatili

1, J. Morse

3, J.F. Motte

2, J.F. Muraz

1, F.E. Rarbi

1, O. Rossetto

1, M.

Salomé3, É. Testa

4, M. Yamouni

1

1LPSC, CNRS/IN2P3, Université Grenoble-Alpes, Grenoble, France,

2Institut Néel, CNRS, Université Grenoble-Alpes, Grenoble, France,

3ESRF, Grenoble, France,

4IPNL, Université de Lyon, Université Lyon, CNRS/IN2P3, France

5.54 Influence of substrate on charge carrier transport properties of single crystal CVD diamond and an 8mm square energy spectrometer S. Hirano

1, J.H. Kaneko

1, T. Hanada

1, T. Shimaoka

1, H. Shimmyo

1, M. Tsubota

1, S. Ito

1, A. Chayahara

2, Y. Mokuno

2, H. Umezawa

2

1Faculty of Engineering, Hokkaido University, Sapporo, Japan,

2National Institute of Advanced Industrial Science and Technology

(AIST), Osaka, Japan

5.55 Electron beam induced current characterization of a HPHT diamond substrate C. Masante

1, F. Donatini

1, N. Rouger

2, J. Pernot

1


2LAPLACE, INPT, UPS, CNRS, Université de Toulouse, Toulouse,

France

5.56 Investigation of the p++ / p interface to lower the contact resistance for power electronic applications C. Masante

1, J. Pernot

1, J. Letellier

1, D. Eon

1, N. Rouger

2


2LAPLACE, INPT, UPS, CNRS, Université de Toulouse, Toulouse,

France

5.57 Enhanced mobility of excitons under inelastic phonon scattering in intrinsic diamond K. Konishi

1, I. Akimoto

2, H. Matsuoka

3, I. Friel

4, J. Isberg

5, N. Naka

1

1Department of Physics, Kyoto University, Kyoto, Japan,

2Department of Materials Science and Chemistry, Wakayama University,

Wakayama, Japan, 3Graduate School of Science, Osaka City University, Osaka, Japan,

4Element Six Innovation, Harwell Oxford,

Didcot, U.K., 5Department of Engineering Sciences, Uppsala University, Uppsala, Sweden

5.58 Spectroscopic characterization of latest generation CVD laboratory grown diamonds E. Biermans, M. Bouman, A. Anthonis HRD Antwerp Research, Antwerpen, Belgium

5.59 The refractive index of synthetic single crystal and polycrystalline diamonds at high temperatures V.Y. Yurov

1,2, E.V. Bushuev

1, A.F. Popovich

1,3, A.P. Bolshakov

1,2,4, E.E. Ashkinazi

1,2, V.G. Ralchenko

1,2,4

1General Physics Institute of Russian Academy of Sciences, Moscow, Russia,

2National Research Nuclear University, MEPhI, Moscow,

Russia, 3Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Fryazino, Russia,

4Harbin Institute of

Technology, Harbin, P.R. China

5.60 Characterization of thin boron-doped diamond films using Raman spectroscopy and chemometrics P. Knittel

1, R. Stach

2, T. Yoshikawa

1, L. Kirste

1, B. Mizaikoff

2, C. Kranz

2, C.E. Nebel

1

1Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany,

2Institute of Analytical and Bioanalytical Chemistry,

Ulm University, Ulm, Germany

5.61 Replacement for the phonon confinement model for nanodiamonds Raman spectra calculation S.V. Koniakhin

1,2,3, O.I. Utesov

4, I.N. Terterov

2, A.G. Yashenkin

4,5, A.V. Siklitskaya

6

1Institut Pascal, PHOTON-N2, University Clermont Auvergne, CNRS, Aubi`ere, France,

2St. Petersburg Academic University, St.

Petersburg, Russia, 3Ioffe Institute, St. Petersburg, Russia,

4Petersburg Nuclear Physics Institute NRC “Kurchatov Institute”, Orlova

Roscha, Gatchina, Russia, 5Department of Physics, St. Petersburg State University, St. Petersburg, Russia,

6Institute of Physical

Chemistry Polish Academy of Sciences, Warsaw, Poland

5.62 k-PEEM ARPES of diamond using a lab-based helium emission VUV source: experiment and calculation A. Croot

1,2, G. Wan

1, M. Cattelan

2, H.D. Andrade

1, N.A. Fox

1,2

1School of Physics, University of Bristol, Bristol, U.K.,

2School of Chemistry, University of Bristol, Bristol, U.K.

5.63 Analysis of diamond surface terminations for different miscut angles by X-ray photoelectron microscopy and attenuated total reflectance G. Alba

1, D. Eon

2, R. Alcántara

3, M.P. Villar

1, J. Navas

3, D. Araujo

1, J. Pernot

2


2Institut Néel, CNRS, Université Grenoble-Alpes,

Grenoble, France 3

Departamento Química-Física Universidad de Cádiz, Cádiz, Spain

5.64 Surface structure and spectroscopic properties of fluorinated diamond materials B. Kiendl

1, M. Drisch

2, F. Keppner

2, A.C. Pöppler

1, B. Knichelmann

1, A. Venerosy

3, H. Girard

3, J.C. Arnault

3, M. Finze

2, S. Choudhury

4,

T. Petit4, A. Krueger

1

1Institute of Organic Chemistry, Julius-Maximilians-Universität Würzburg, Würzburg, Germany,

2Institute of Inorganic Chemistry,

Julius-Maximilians-Universität Würzburg, Würzburg, Germany, 3CEA-LIST, Saclay, France,

4Helmholtz-Zentrum für Neue Materialien

und Energie GmbH Berlin, Germany

5.65 Evidence of the TiC formation at diamond/Ti-based ohmic contact interfaces by STEM-EELS M.P. Villar

1, F. Lloret

1, G. Alba

1, B. Antunez

2, J. Montserrat

2, P. Godignon

2, D. Eon

3, D. Araujo

1


2IMB CNM, CSIC, Barcelona, Spain


5.66 Exploring possibilities of band gap measurement with off-axis EELS in TEM S. Korneychuk

1, B. Partoens

2, G. Guzzinati

1, R. Ramaneti

3,4, J. Derluyn

5, K. Haenen

3,4, J. Verbeeck

1

1Electron Microscopy for Material Science (EMAT), University of Antwerp, Antwerp, Belgium,

2Condensed Matter Theory (CMT),

University of Antwerp, Antwerp, Belgium, 3Institute for Materials Research (IMO), Hasselt University, Diepenbeek, Belgium,

4IMOMEC, IMEC vzw, Diepenbeek, Belgium,

5EpiGaN NV, Hasselt, Belgium.

5.67 Characteristics of He ion implanted layers on single-crystal diamond A. Valentin

1, M. De Feudis

1,2, O. Brinza

1, A. Tardieu

1, R. Issaoui

1, L. William

1, J. Achard

1

1Laboratoire des Sciences des Procédés et des Matériaux (LSPM), Université Paris 13, LSPM-CNRS, Villetaneuse, France,

2Department

of Mathematics and Physics, University of Salento, Lecce, Italy

5.68 Energy band alignment of Al2O3/NO/H-diamond heterointerface determined by synchrotron XPS/UPS/XANES measurements N.C. Saha

1, K. Takahashi

2, M. Imamura

2, M. Kasu

1

1Department of Electrical and Electronic Engineering, Saga University, Saga, Japan,

2Synchrotron Light Application Center, Saga

University, Saga, Japan

5.69 Influence of gate metals on NO2-hole doped H-diamond MOS structures N.C. Saha, M. Kasu Department of Electrical and Electronic Engineering, Saga University, Saga, Japan

5.70 Diamond MOSFET with MoO3 gate dielectric Z. Ren, J. Zhang, J. Zhang, L. Xu, Y. Hao State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, Xidian University, Xi’an, China

5.71 Gate oxide electrical stability of diamond p-type MOS capacitors O. Loto

1, M. Florentin

1, C. Masante

1, M.L Hicks

3, A. Pakpour-Tabrizi

3, D. Eon

1, J. Pernot

1, R. Jackman

3, E. Gheeraert

1,2


2University of Tsukuba, Tsukuba, Japan

3London Centre for Nanotechnology and Department of Electronic and Electrical Engineering, University College London (UCL),

London, U.K.

5.72 DC and RF characterization of V2O5/H-diamond MISFETs G. Verona-Rinati

1, C. Verona

1, W. Ciccognani

2, S. Colangeli

2, E. Limiti

2, M. Marinelli

1, D. Cannatà

3, M. Benetti

3, F. Di Pietrantonio

3

1Dipartimento di Ingegneria Industriale, National Institute for Nuclear Physics (INFN), University of Rome, Tor Vergata, Rome, Italy,

2Dipartimento di Ingegneria Elettronica, University of Rome, Tor Vergata, Rome, Italy,

3Institute of Acoustics and Sensors “O. M.

Corbino”, National Research Council of Italy, Rome, Italy

5.73 Lateral diamond Schottky diodes on heteroepitaxial substrate J. Letellier

1, E. Gheeraert

1,2, G. Saint-Girons

3, R. Bachelet

3, L. Mehmel

4, R. Issaoui

4, A. Tallaire

4, J. Achard

4, I. Stenger

5, J. Barjon

5, K. H.

Lee6, J. Delchevalrie

6, N. Tranchant

6, S. Saada

6, J. C. Arnault

6, D. Eon

1


2University of Tsukuba, Tsukuba, Japan,

3Ecole Centrale de Lyon,

INL, CNRS, Ecully, France, 4LSPM, Université Paris, Sorbonne Paris Cité, CNRS, Villetaneuse, France,

5Groupe d’Etude de la Matière

Condensée (GEMaC), Université Versailles St Quentin, CNRS, Université Paris-Saclay, Versailles, France, 6CEA LIST, Diamond Sensors

Laboratory, Gif- sur- Yvette, France

5.74 Monolithic diamond Schottky barrier diodes integration: simulations and experimental realizations G. Perez

1, J. Letellier

2, A. Maréchal

1, G. Chicot

2, D. Eon

2, N. Rouger

3

1 INP G2Elab, CNRS, Université Grenoble-Alpes, Grenoble, France,

2 Institut Néel, CNRS, Université Grenoble-Alpes, Grenoble, France,

3LAPLACE, INPT, UPS, CNRS, Université de Toulouse, Toulouse, France

5.75 100 kA/cm

2 Schottky-pn diodes on freestanding CVD boron-doped diamond (100) substrate

T. Matsumoto1,2

, R. Yoshida1, T. Yamamoto

1, T. Teraji

3, O. Ariyada

4, H. Kato

2, S. Yamasaki

2, T. Inokuma

1, N. Tokuda

1,2

1Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Japan,

2Advanced Power Electronics Research

Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan, 3Research Center for Functional

Materials, NIMS, Tsukuba, Japan, 4Arios Incorporated, Akishima, Japan

5.76 Electrical breakdown in boron-doped diamond measured by transmission line pulsed method N. Lambert

1, A. Taylor

1, P. Hubik

1, D. Tremouilles

2, J. Bulir

1, V. Mortet

1,3

1Institute of Physics, Academy of Sciences of the Czech Republic, v.v.i., Prague, Czech Republic,

2LAAS-CNRS, Université de Toulouse,

CNRS, Toulouse, France, 3Faculty of Biomedical Engineering, Czech Technical University in Prague, Kladno, Czech Republic

5.77 New approaches to make diamond field effect transistors based on diamond nanostructures A. Pakpour-Tabrizi

1, A. Afandi

1, M. Reed

2, R.B. Jackman

1

1London Centre for Nanotechnology and Department of Electronic and Electrical Engineering, University College London (UCL),

London, U.K., 2Yale Engineering, Yale University, New Haven, CT, U.S.A.

5.78 Ohmic contact, CVD diamond, boron delta-layers E.A. Surovegina

1, E.V. Demidov

1, V.I. Shashkin

1, M.N. Drozdov

1, M.A. Lobaev

2, A.L. Vikharev

2, A.M. Gorbachev

2, D.B. Radishev

2, V.A.

Isaev2

1Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia,

2Institute of Applied Physics, Russian

Academy of Sciences, Nizhny Novgorod, Russia

5.79 Tunable carrier density of two-dimensional hole gases on diamond D. Oing, M. Geller, A. Lorke and N. Wöhrl University Duisburg-Essen, Duisburg, Germany

5.80 Self-assembled silica nanoparticles for diamond nano-structuration L. Mehmel

1, R. Issaoui

1, A. Tallaire

1,2, V. Mille

1, O. Brinza

1, J. Achard

1

1Université Paris 13, LSPM-CNRS, Villetaneuse, France

2Institut de Recherche de Chimie Paris, Chimie ParisTech, CNRS, PSL Research

University, Paris, France

5.81 Diamond microstructuring by deep anisotropic reactive ion etching in SF6 plasma A.V. Golovanov

1, V.S. Bormashov

1, N.V. Luparev

1, S.A. Tarelkin

1, S.G. Buga

1,2, V.D. Blank

1,2

1FSBI TISNCM, Troitsk, Moscow, Russia,

2MIPT, Dolgoprudny, Russia

5.82 Quantum coins and nano sensors: development of unforgeable diamond money A. Schmidt, J.P. Reithmaier, C. Popov Institute of Nanostructure Technologies and Analytics (INA), University of Kassel, Kassel, Germany

5.83 Moulded diamond tip sharpening by focused ion beam and reactive ion etching T. Boehme

1,2, T. Hantschel

1, W. Vandervorst

1,2

1Materials and Component Analysis Department, imec, Leuven, Belgium,

2Institute for Nuclear and Radiation Physics, KU Leuven,

Belgium

5.84 Upgraded to 14.1

5.85 Phosphorus-doping of diamond during HPHT growth for n-type conductivity S.A. Tarelkin

1,2,3, V.S. Bormashov

1,2, M.S. Kuznetsov

1, S.A. Terentiev

1, D.D. Prikhodko

1,2, A.S. Galkin

1 and V.D. Blank

1,2,3

1Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Russia,

2Moscow Institute of Physics and Technology,

Dolgoprudny, Russia, 3National University of Science and Technology MISiS, Moscow, Russia

5.86 Fabrication of large scale heteroepitaxial diamond substrate using microneedle method Y. Kimura, S.W. Kim, K. Ikejiri, Y. Kawamata, K. Nishiguchi, K. Fujita Diamond Substrate Development Department, Adamant Namiki Precision Jewel Co. Ltd., Tokyo, Japan

5.87 Development of a kinetic Monte Carlo program for simulation of CVD diamond growth M.D. Williams, N.L. Allan, P.W. May School of Chemistry, University of Bristol, Bristol, U.K.

5.88 Doping of CVD diamond by combination of impurities: boron and sulphur M.A. Lobaev

1, A.L. Vikharev

1, A.M. Gorbachev

1, D.B. Radishev

1, V.A. Isaev

1, E.A. Surovegina

2, E.V. Demidov

2, V.I. Shashkin

2, M.N.

Drozdov2, P.A. Yunin

2, J.E. Butler

1

1The Institute of Applied Physics of the Russian Academy of Sciences (IAP RAS), Nizhny Novgorod, Russia,

2The Institute of Physics of

Microstructure of the Russian Academy of Sciences (IAP RAS), Novgorod region, Russia

5.89 Boron-vacancy centers in diamond: ab-initio study K. Inoue

1, M. Muruganathan

1, T. Kodera

2, H. Mizuta

1,3

1School of Materials Science, Japan Advanced Institute of Science and Technology, Ishikawa, Japan,

2Department of Electrical and

Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan, 3Hitachi Cambridge Laboratory, Cambridge, United Kingdom

5.90 Improved electronic properties of p- epitaxial layers grown on HPHT (100) substrates after a surface pretreatment C. Barbay

1, C. Mer-Calfati

1, N. Tranchant

1, S. Saada

1, J.C. Arnault

1, I. Stenger

2, V. Zuerbig

3, N. Lang

3, L. Kirste

3, O. Loto

4, D. Eon

4

1CEA LIST, Diamond Sensors Laboratory, Gif- sur- Yvette, France,

2Groupe d’Etude de la Matière Condensée (GEMaC), Université

Versailles St Quentin, CNRS, Université Paris-Saclay, Versailles, France, 3

Fraunhofer Institute for Applied Solid State Physics (IAF), Freiburg, Germany


5.91 Investigation of morphology and boron incorporation in heavily p-type CVD diamond film growth R. Rouzbahani

1,2, S.S. Nicley

1,2, P. Pobedinskas

1,2, M.K. Van Bael

1,2, K. Haenen

1,2



5.92 Growth and characterization of the laterally enlarged single crystal diamond J. Zhang, G. Yuan, Z. Ren, J. Zhang, Y. Hao State Key Discipline Laboratory of Wide Bandgap Semiconductor Technologies, Xidian University, Xi’an, China

5.93 Growth of boron doped, nanocrystalline diamond over gold substrates with controlled gold nanoparticle formation S.S. Nicley

1,2, P. Pobedinskas

1,2, M.K. Van Bael

1,2, K. Haenen

1,2



5.94 Low temperature deposition of nanocrystalline diamond films on ZnO/LiNbO3 substrates for waveguiding layer acoustic wave devices D. Dekkar

1, F. Bénédic

1, C. Floer

2, S. Hage-Ali

2, O. Brinza

1, O. Elmazria

2

1Université Paris 13, LSPM-CNRS, Villetaneuse, France,

2Institut Jean Lamour UMR 7198, CNRS, Université de Lorraine, Nancy, France

5.95 Diamond in ‘beyond CMOS’ technologies: from surface chemistry, thermal interface studies to chip-based Raman spectroscopy and micro/nano patterned field emission devices R. Ramaneti

1,2, K.J. Sankaran

1,2, G. Degutis

1,2, Y. Zhou

4, S. Korneychuk

3, P. Pobedinskas

1,2, J. Derluyn

7, J. Verbeeck

3, K.C. Leou

5, I.N.

Lin6, M. Kuball

4, K. Haenen

1,2


2IMOMEC, IMEC vzw, Diepenbeek, Belgium,

3Electron Microscopy for Materials Science (EMAT), University of Antwerp, Antwerp, Belgium,

4Center for Device Thermography and

Reliability (CDTR), HH Wills Physics Laboratory, University of Bristol, Bristol, U.K., 5Department of Engineering and System Science,

National Tsing Hua University, Hsinchu, Taiwan, 6Department of Physics, Tamkang University, Tamsui, Taiwan,

7EpiGaN NV, Hasselt,

Belgium

5.96 CVD Diamond growth on gallium nitride using a novel seeding method A.H. Piracha, P.W. May School of Chemistry, University of Bristol, Bristol, U.K.,

5.97 Spatially resolved emissions in microwave-activated (SiH4/CH4/)H2 plasmas E.J.D. Mahoney

1,2, A. Lalji

1, B. Rodriguez

1,2, S. Mushtaq

1, B.S. Truscott

1, M.N.R. Ashfold

1, Y.A. Mankelevich

3


2Centre for Doctoral Training (CDT) in Diamond Science and Technology,

University of Warwick, Coventry, U.K., 3Skobel’tsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow,

Russia

5.98 Hydrogen emissions in microwave-activated H2-containing plasmas E.J.D. Mahoney

1,2, S. Mushtaq

1, M.N.R. Ashfold

1, Y.A. Mankelevich

3


2Centre for Doctoral Training (CDT) in Diamond Science and Technology,

University of Warwick, Coventry, U.K., 3Skobel’tsyn Institute of Nuclear Physics, Lomonosov Moscow State University, Moscow,

Russia

5.99 A simple, space constrained NIRIM type reactor for chemical vapour deposition of diamond E.L.H. Thomas, L. Ginés, S. Mandal, G.M. Klemencic, O.A. Williams School of Physics and Astronomy, Cardiff University, Cardiff, U.K. 19:50 Closing Day 1 “Hasselt Diamond Workshop 2018 – SBDD XXIII”.

Thursday, March 8, 2018

Session 6 Nanoparticles Chair: Romana Schirhagl, Rijksuniversiteit Groningen, Netherlands 09:00 6.1 Fabrication and in depth characterization of phosphorus doped diamond nanoparticles S. Temgoua

1, B. Kiendl

2, S. Drijkoningen

3,4, K. Haenen

3,4, A. Krueger

2, J. Barjon

1

1Groupe d’Etude de la Matière Condensée (GEMaC), Université Versailles St Quentin, CNRS, Université Paris-Saclay, Versailles,

France, 2Institut für Organische Chemie, Universität Würzburg, Würzburg, Germany,

3Institute for Materials Research (IMO), Hasselt

University, Diepenbeek, Belgium,4IMOMEC, IMEC vzw, Diepenbeek, Belgium

09:20 6.2 Surface structural transformation and reaction dynamics of nanodiamonds A.I. Ahmed

1, L. Gines

2, S. Mandal

2, C.Y. Song

1, O.A.Williams

2, M.N. Sarmiento

1, C.L. Cheng

1

1Department of Physics, National Dong Hwa University, Taiwan,

2School of Physics and Astronomy, Cardiff University, Cardiff, U.K.

09:40 6.3 Microwave dielectric spectroscopy for characterising sp

2 carbon in diamond powders

J.A. Cuenca1, E.L.H. Thomas

2, S. Mandal

2, O.A. Williams

2, A. Porch

1

1School of Engineering, Cardiff University, Cardiff, U.K.,

2School of Physics and Astronomy, Cardiff University, Cardiff, U.K.

10:00 6.4 Quantification of the organ distribution of cationic polymer-functionalized fluorescent nanodiamonds used to deliver a siRNA treatment in mice with Ewing sarcoma xenografted tumour S. Claveau

1,2, M. Kindermann

3,4,5, A. Papine

6, X. Délen

7, J.R. Bertrand

2, P. Cigler

3, F. Treussart

1

1Laboratoire Aimé Cotton, CNRS, Université Paris Sud and ENS Cachan, Université Paris-Saclay, Orsay, France,

2Vectorology and

Anticancer Therapies, CNRS, Université Paris Sud, Institut Gustave Roussy, Université Paris-Saclay, Villejuif, France, 3Institute of

Organic Chemistry and Biochemistry of the Czech Academy of Sciences, Prague, Czech Republic, 4Institute of Microbiology of the

Czech Academy of Sciences, Prague, Czech Republic, 5Department of Chemical Engineering, University of Chemistry and Technology

Prague, Prague, Czech Republic, 6IMSTAR S.A., Paris, France,

7Laboratoire Charles Fabry, Institut d’Optique, CNRS, Université Paris-

Saclay, Palaiseau, France. 10:20 6.5 Photoelectrocatalytic conversion of CO2: application of transition metal functionalised diamond particles B. Kiendl

1, S. Choudhury

2,3, F. Buchner

2, A. Venerosy

4, E. Hadzifejzovic

5, M.M. Lounasvuori

5, J. Ren

2,3, T. Petit

2, H.A. Girard

4, J.C.

Arnault4, J.S. Foord

5, A. Krueger

1

1Institut für Organische Chemie, Universität Würzburg, Würzburg, Germany,

2Institute of Methods for Materials Development,

Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany, 3Department of Physics, Freie Universität Berlin,

Berlin, Germany, 4Diamond Sensors Laboratory, CEA-LIST, Gif-sur-Yvette, France,

5Department of Chemistry, University of Oxford,

Oxford U.K. 10:40 Coffee Break (Grand Banquet Hall)

Session 7 Diodes Chair: Miloš Nesládek, Hasselt University & IMEC vzw, Belgium 11:20 7.1 V

2 diode current density dependence indicating a high current regime for Schottky-PIN diamond diodes

R. Hathwar1, M. Dutta

2, F.A.M. Koeck

3, M. Saremi

1, S. Chowdhury

2, S.M. Goodnick

1, R.J. Nemanich

3

1Department of Electrical Engineering, Arizona State University, Tempe, AZ, U.S.A.,

2Department of Electrical Engineering, UC Davis,

Davis, CA, U.S.A, 3Department of Physics, Arizona State University, Tempe, AZ, U.S.A.

11:40 7.2 Multi-step junction termination for high voltage diamond p-i-n diodes A.Traore

1, T. Makino

1, A. Nakajima

1, H. Kato

1, M. Ogura

1, Y. Kato

1, S. Yamasaki

1,2

1Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba,

Japan, 2University of Tsukuba, Tsukuba, Japan

12:00 7.3 Mechanism of reverse current increase of vertical-type WC diamond Schottky diodes T. Teraji

1, A. Fiori

1,2, N. Kiritani

3, S. Tanimoto

4, E. Gheeraert

2, Y. Koide

1

1National Institute for Materials Science (NIMS), Tsukuba, Japan,


3Nissan Motor Co., Ltd., Kanagawa, Japan,

4Nissan Arc Ltd., Kanagawa, Japan

12:20 Lunch (Grand Banquet Hall) + Joint Committee Meeting (Fluistertuin) Session 8 Quantum Applications I Chair: Jan Meijer, Universität Leipzig, Germany 13:50 8.1 (Invited) Quantum science and technology with nitrogen vacancy centres in diamond G.W. Morley Department of Physics, University of Warwick, Coventry, U.K. 14:20 8.2 Coherent control of NV spin ensembles within levitating micro-diamond T. Delord, L. Nicolas, P. Huillery, G. Hétet PSL Research University, CNRS, Université Pierre et Marie Curie, Sorbonne Universités, Université Paris Diderot, Sorbonne Paris-Cité, Paris, France 14:40 8.3 Coherent control of solid state nuclear spin nano-ensembles T. Unden

1, N. Tomek

1, T. Weggler

1, F. Frank

1, P. London

2, H. Watanabe

3, K.M. Itoh

4, M.B. Plenio

5, B. Naydenov

1, F. Jelezko

1

1Institute for Quantum Optics and Center for Integrated Quantum Science and Technology (IQST), Universität Ulm, Ulm, Germany,

2Department of Physics, Technion, Israel Institute of Technology, Haifa, Israel,

3Electronics and Photonics Research Institute, National

Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan, 4Department of Applied Physics and Physico-

Informatics, Keio University, Yokohama, Japan, 5Institute for Theoretical Physics and Center for Integrated Quantum Science and

Technology (IQST), Universität Ulm, Ulm, Germany

15:00 8.4 Probing polarization dynamics of nuclear spin ensembles J. Scheuer

1, I. Schwartz

2, S. Müller

1, Q. Chen

2, I. Dhand

2, M.B. Plenio

2, B. Naydenov

1, F. Jelezko

1


2Institute for Theoretical Physics and Center for Integrated Quantum Science and Technology (IQST), Universität Ulm, Ulm, Germany

Session 9 Posters II & Coffee Break Chairs: Anke Krüger, Julius-Maximilians-Universität Würzburg, Germany; Julien Pernot, CNRS/Université Grenoble Alpes-Institut Néel, France; Matthias Schreck, Universität Augsburg, Germany

15:20 – 16:50 (Grand & Small Banquet Hall) For a detailed list of posters, see Session 5. Session 10 Devices & Sensors Chair: Satoshi Koizumi, NIMS, Japan 16:50 10.1 (Invited) Synthetic diamond based detectors for radiation and particle therapy dosimetry M. Marinelli

Dipartimento di Ingegneria Industriale, National Institute for Nuclear Physics (INFN), University of Rome, Tor Vergata, Rome, Italy 17:20 10.2 scCVD diamond membrane based microdosimeter for hadron therapy I. Zahradnik

1, P. Barberet

5,6, P. Bergonzo

3, L. De Marzi

4, W. Kada

8, S. Natko

7, M. Pomorski

1, S. Saada

1, D. Tromson

2

1Diamond Sensors Laboratory, CEA-LIST, Gif-sur-Yvette, France,

2Sensors and Electronic Architectures Laboratory, CEA-LIST, Gif-sur-

Yvette, France, 3CEA-LIST, Gif-sur-Yvette, France,

4Centre de Protonthérapie d’Orsay, Institut Curie, Orsay, France,

5CENBG, Université

de Bordeaux, Gradignan, France, 6CENBG, CNRS, Gradignan, France,

7Division of Experimental Physics, Ruđer Bošković Institute,

Zagreb, Croatia, 8Faculty of Science and Technology, Gunma University, Gunma, Japan

17:40 10.3 Diamond 2D-photonic crystals for highly sensitive label-free biosensors P. Borta

1, M. El Kurdi

1, S. Sauvage

1, S. Saada

2, H. Girard

2, X. Checoury

1

1Centre de Nanosciences et de Nanotechnologies CNRS, Université Paris-Sud, Université Paris-Saclay, Orsay, France,

2CEA LIST,

Diamond Sensors Laboratory, Gif- sur- Yvette, France 18:00 Closing Day 2 “Hasselt Diamond Workshop 2018 – SBDD XXIII”. 20:00 Conference Dinner at the Ravel Room of the Holiday Inn.

Friday, March 9, 2018

Session 11 Quantum Applications II Chair: Gavin W. Morley, University of Warwick, U.K. 09:00 11.1 (Invited) Technological challenges to create solid state quantum devices in diamond S. Pezzagna, J. Meijer Felix-Bloch Institute for Solid State Physics, Universität Leipzig, Leipzig, Germany 09:30 11.2 Photoelectric readout of single nitrogen-vacancy centres in diamond P. Siyushev

1, E. Bourgeois

2,3, T. Yamamoto

2, T. Teraji

4, F. Jelezko

1, M. Nesládek

2,3




4National Institute for Materials Science (NIMS), Japan

09:50 11.3 Charge state modulation of nitrogen vacancy centers in multiple layer of n-i-n junctions M. Shimizu

1, T. Makino

2, H. Kato

2, T. Iwasaki

3, S. Yamasaki

2, M. Hatano

3,

1Tokyo University of Science, Tokyo, Japan,

2Advanced Power Electronics Research Center, National Institute of Advanced Industrial

Science and Technology (AIST), Tsukuba, Japan, 3Tokyo Institute of Technology, Tokyo, Japan

10:10 11.4 Production of nitrogen vacancy centres with a scanning electron microscope S. Becker, N. Raatz, S. Jankuhn, R. John, J. Meijer Felix-Bloch Institute for Solid State Physics, Universität Leipzig, Leipzig , Germany 10:30 Coffee Break (Grand Banquet Hall) Session 12 Field Effect Transistors Chair: Robert J. Nemanich, Arizona State University, U.S.A. 11:00 12.1 (Invited) Deep depletion concept for diamond MOSFET T.T. Pham

1,2, N. Rouger

3, C. Masante

1,2, G. Chicot

2, F. Udrea

4, D. Eon

1, E. Gheeraert

1,5, J. Pernot

1


2INP G2Elab, CNRS, Université Grenoble-Alpes, Grenoble, France,;

3LAPLACE, INPT, UPS, CNRS, Université de Toulouse, Toulouse, France,

4Department of Engineering, The University of Cambridge,

Cambridge, U.K. 5University of Tsukuba, Tsukuba, Japan

11:30 12.2 Inversion channel diamond MOSFET with lightly phosphorus doped body T. Matsumoto

1,2, H. Kato

2, T. Makino

2, M. Ogura

2, D. Takeuchi

2, T. Inokuma

1, S. Yamasaki

2, N. Tokuda

1,2

1Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Japan,

2Advanced Power Electronics Research

Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan

11:50 12.3 STEM-VEELS determination of alumina bandgap and dielectric functions in diamond MOSFET J. Cañas

1, M.Gutierrez

1, J.C. Piñero

2, D. Araujo

1, J.Pernot

3


2Departamento Didáctica de la Matemática,

Universidad de Cádiz, Cádiz, Spain, 3Institut Néel, CNRS, Université Grenoble-Alpes, Grenoble, France

12:10 12.4 Diamond field-effect transistors fabricated on high-quality heteroepitaxial diamond wafer using microneedle technology M. Kasu

1, N. Fukami

1, Y. Ishimatsu

1, S. Masuya

1, T. Oishi

1, D. Fujii

2, S.W. Kim

2

1Department of Electrical and Electronic Engineering, Saga University, Saga, Japan,

2 Namiki Precision Jewel Co., Ltd., Tokyo, Japan

12:30 Lunch (Grand Banquet Hall)

Session 13 Quantum Applications III Chair: Christoph Becher, Universität des Saarlandes, Germany 14:00 13.1 Variations in the sign of NV centers photoelectrically detected magnetic resonances, reflecting charge exchanges between NV and other defects E. Bourgeois

1,2, J. Soucek

2, M. Gulka

2, J. Hruby

2, M. Nesládek

1,2



14:20 13.2 Magnetic field-induced enhancement of the nitrogen-vacancy fluorescence quantum yield M. Capelli

1, P. Reineck

1, D.W.M. Lau

1, A. Orth

1, J. Jeske

2, M.W. Doherty

3, T. Ohshima

4, A.D. Greentree

1, B.C. Gibson

1

1ARC Centre of Excellence for Nanoscale BioPhotonics, RMIT University, Melbourne, Australia,

2Chemical and Quantum Physics, RMIT

University, Melbourne, Australia, 3Laser Physics Centre, Australian National University, Canberra, Australia,

4National Institutes for

Quantum and Radiological Science and Technology, Takasaki, Gunma, Japan 14:40 13.3 Closing the spin polarization loop of NV(-) – the role of pseudo Jahn-Teller interaction in the spin selective decay G. Thiering

1,2, A. Gali

1,2

1Wigner Research Centre for Physics, Hungarian Academy of Sciences, Budapest, Hungary,

2Department of Atomic Physics, Budapest

University of Technology and Economics, Budapest, Hungary 15:00 13.4 A super-resolution caliper in diamond I. Jakobi

1, J. Michl

1, J. Wrachtrup

1, J. Götte

2 I. Gerhardt

1

13

rd Physical Institute, University of Stuttgart, Stuttgart, Germany,

2College of Engineering and Applied Sciences, Nanjing University,

Nanjing, China 15:20 Coffee Break (Grand Banquet Hall)

Session 14 Emerging Applications Chair: Ken Haenen, Hasselt University & IMEC vzw, Belgium 15:50 14.1 Redox agent enhanced chemical mechanical polishing of thin film diamond S. Mandal

1, E.L.H. Thomas

1, L. Gines

1, D. Morgan

2, J. Green

1, E. Brousseau

3, O.A. Williams

1


2Cardiff Catalysis Institute, School of Chemistry, Cardiff University,

Cardiff, U.K., 3Cardiff School of Engineering, Cardiff University, Cardiff, U.K.

16:10 14.2 Fabrication of high power density nuclear battery prototype based on diamond Schottky diodes V.S. Bormashov

1,2, S.Y. Troschiev

1, S.A. Tarelkin

1, A.P. Volkov

1, D.V. Teteruk

1, A.V. Golovanov

1, M.S. Kuznetsov

1, N.V. Kornilov

1,

S.A. Terentiev1, V.D. Blank

1,2

1Technological Institute for Superhard and Novel Carbon Materials, Troitsk, Russia,

2Moscow Institute of Physics and Technology,

Dolgoprudny, Russia

16:30 14.3 Nanomolar level detection of Cd

2+ and Pb

2+ ions using N-doped diamond nanostructures

S. Deshmukh1,

K.J. Sankaran

2,3, S. Korneychuk

4, J. Verbeeck

4, K. Haenen

2,3, S.S. Roy

1

1Department of Physics, School of Natural Sciences, Shiv Nadar University, India,

2Institute for Materials Research (IMO), Hasselt

University, Belgium, 3IMOMEC, IMEC vzw, Belgium,

4Electron Microscopy for Materials Science (EMAT), University of Antwerp,

Belgium. 17:10 14.4 Formation of novel optical centers in diamond upon ion implantation and annealing S. Ditalia Tchernij

1,2, F. Picollo

1,2, P. Traina

3, E. Moreva

3, I. P. Degiovanni

3, T. Herzig

4, J. Küpper

4, S. Pezzagna

4, G. Prestopino

5, M.

Marinelli5, E. Milani

5, C. Verona

5, G. Verona-Rinati

5, N. Skukan

6, M. Jakšić

6, M. Genovese

3,2, J. Meijer

4, P. Olivero

1,2, J. Forneris

2

1Physics Department and Nanostructured Interfaces and Surfaces (NIS) Inter-departmental Centre, Università degli Studi di Torino,

Torino, Italy, 2National Institute for Nuclear Physics (INFN), Torino, Italy,

3Istituto Nazionale di Ricerca Metrologica (INRiM), Torino,

Italy, 4Department of Nuclear Solid State Physics, Universität Leipzig, Leipzig, Germany,

5Dipartimento di Ingegneria Industriale,

National Institute for Nuclear Physics (INFN), University of Rome, Tor Vergata, Rome, Italy, 6Ruđer Bošković Institute, Zagreb, Croatia

17:10 Closing “Hasselt Diamond Workshop 2018 – SBDD XXIII”.

Workshop sponsored by Seki Diamond Systems, Namiki Precision Jewel Co., Ltd., DiamFab, the Research Foundation - Flanders via the Scientific Research Community “Surface Modification of Materials”,

and Hasselt University through the Institute for Materials Research (IMO) and IMOMEC.

http://sekidiamond.com/

http://www.namiki.net/

http://diamfab.eu/

http://www.fwo.be/en/index.aspx

http://www.uhasselt.be/english

http://www.uhasselt.be/IMO



HASSELT DIAMOND WORKSHOP 2018 – SBDD XXIII

Tuesday, March 6, 2018

18:00 – 19:00 Registration at the Express by Holiday Inn & Reception.

Wednesday, March 7, 2018

08:20 – 08:50 Registration at the cultuurcentrum Hasselt.

08:50 – 09:00 Opening “Hasselt Diamond Workshop 2018 – SBDD XXIII”.

09:00 – 10:40 Session 1 Growth & Doping Chair: Paul W. May, University of Bristol, U.K.

10:40 – 11:20 Coffee Break (Grand Banquet Hall)

11:20 – 12:20 Session 2 Electrical Transport

Chair: Julien Barjon, Université de Versailles Saint-Quentin-en-Yvelines, France

12:20 SBDD XXIII group photo (Front entrance ccHa)

12:30 – 14:10 Lunch (Grand Banquet Hall)

14:10 – 15:40 Session 3 Biomedical Applications Chair: Philippe Bergonzo, CEA/Saclay, France


16:20 – 17:50 Session 4 Surface Conductivity Chair: Makoto Kasu, Saga University, Japan

17:50 – 19:50 Session 5 Posters I & Reception offered by .

Chairs: Anke Krüger, Julius-Maximilians-Universität Würzburg, Germany; Julien Pernot, CNRS/Université Grenoble Alpes-Institut Néel, France; Matthias Schreck, Universität Augsburg, Germany

19:50 Closing Day 1 “Hasselt Diamond Workshop 2018 – SBDD XXIII”.

Thursday, March 8, 2018

09:00 – 10:40 Session 6 Nanoparticles Chair: Romana Schirhagl, Rijksuniversiteit Groningen, Netherlands


11:20 – 12:20 Session 7 Diodes Chair: Miloš Nesládek, Hasselt University & IMEC vzw, Belgium

12:20 – 13:50 Lunch (Grand Banquet Hall) 13:50 – 15:20 Session 8

Quantum Applications I Chair: Jan Meijer, Universität Leipzig, Germany

15:20 – 16:50 Session 9 Posters II Chairs: Anke Krüger, Julius-Maximilians-Universität Würzburg, Germany; Julien Pernot, CNRS/Université Grenoble Alpes-Institut Néel, France; Matthias Schreck, Universität Augsburg, Germany

16:50 – 18:00 Session 10

Devices & Sensors Chair: Satoshi Koizumi, NIMS, Japan

18:00 Closing Day 2 “Hasselt Diamond Workshop 2018 – SBDD XXIII”. 20:00 Conference dinner at the Ravel Room of the Holiday Inn.

Friday, March 9, 2018 09:00 – 10:30 Session 11 Quantum Applications II Chair: Gavin W. Morley, University of Warwick, U.K.


11:00 – 12:30 Session 12

Field Effect Transistors Chair: Robert J. Nemanich, Arizona State University, U.S.A.

12:30 – 14:00 Lunch (Grand Banquet Hall)

14:00 – 15:20 Session 13

Quantum Applications III Chair: Christoph Becher, Universität des Saarlandes, Germany


15:50 – 17:10 Session 14

Emerging Applications Chair: Ken Haenen, Hasselt University & IMEC vzw, Belgium

17:10 Closing “Hasselt Diamond Workshop 2018 – SBDD XXIII”.

Workshop sponsored by Seki Diamond Systems, Namiki Precision Jewel Co., Ltd., DiamFab, the Research Foundation - Flanders via the Scientific Research Community “Surface Modification of Materials”,

and Hasselt University through the Institute for Materials Research (IMO) and IMOMEC.

http://sekidiamond.com/

http://www.namiki.net/

http://diamfab.eu/

http://www.fwo.be/en/index.aspx





Documents

Hasselt Diamond Workshop 2018 SBDD XXIIIDuring three full days, SBDD XXIII will address recent progress in a variety of topics ranging from fundamental material science to applications,