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Specialty Sensor for infra read and instrumentation purposes.
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New Streakscope C10627
SYSTEMS PRODUCTS PAGE 59
Mini-spectrometerC10988MA
SOLID STATE PRODUCTS PAGE 33
Lightningcure®
LC-L2
ELECTRON TUBE PRODUCTS PAGE 50
NEWS2009
01
SYSTEMS PRODUCTS PAGE 68
ORCA camera line-up
4 Company News
8 Application Report
SOLID STATE PRODUCTS
11 SSD for LAT/FGST
12 Line-up of MPPC & MPPC module
13 MPPC® (Multi-Pixel Photon Counter)
14 MPPC®
16 Illuminance sensors
18 Illuminance sensor/Colour sensor
22 Photo IC diode
23 InGaAs multichannel detector head
24 Colour sensor
26 Digital compensation type APD module
28 High-performance CCD image sensors for
measurement instruments
30 Mini-spectrometer TG series
33 Mini-spectrometer
36 InAsSb photodiode
37 Back-thinned CCD
38 InGaAs PIN photodiode
40 Infrared LED
42 Transm./Receiver photo IC for optical link
44 16-element Si photodiode array
46 Photodiode arrays with amplifi er
LASER PRODUCTS
48 Mid Infrared Quantum Cascade Laser (QCL)
ELECTRON TUBE PRODUCTS
49 PhotoIon bar
50 Lightningcure®
51 High voltage power supply
52 New high sensitivity photon counting head
53 Xenon lamp
54 UV-VIS light source
55 MCP for TOF-MS
SYSTEMS PRODUCTS
56 HCImage
58 iPhemos SD
59 New Streakscope
60 LED light metering and photometry systems
62 TDI camera line-up
65 X-ray line scan camera
66 PMA-20
68 ORCA camera line-up
SERVICE
69 Fax reply
70 Exhibitions 2009
71 Hamamatsu Photonics Europe
Content
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW
NEW NEW
NEW
Highlights
News 2009 Vol. 12
ELECTRON TUBE PRODUCTS 50 Lightningcure®
LC-L2
SOLID STATE PRODUCTS 33 Mini-spectrometer C10988MA
SYSTEMS PRODUCTS
59 New Streakscope C10627
News 2009 Vol. 1 3
IC defect localisation with direct tester
head docking
Modular microscope system - confi gured
to include emission microscopy and laser
scan microscopy
High mechanical and optical precision
High stability
800 mm height
iPhemos SD
SYSTEMS PRODUCTS PAGE 58
News 2009 Vol. 14
Company News
Hamamatsu Photonics’ commitment to Photonics Technology
For more than 55 years, Hamamatsu Photonics’ corporate philosophy stresses
the advancement of Photonics and the application of Photonics technology, a
philosophy which remains unchanged today. The company supports the
advancement of industry and research, through discovery of new opportunities
using Photonics technology. Building strong working relationships is central to
this philosophy and Hamamatsu aims to create partnerships with our
customers, enabling us to provide the best possible service.
Hamamatsu Photonics’ commitment to research and development using their
extensive knowledge and know-how in Photonics technology has led to the
generation of “state-of-the art”, high quality opto-electronic products and a
wealth of new manufacturing processes and techniques.
In February 2009, Hamamatsu Photonics held The Photon Fair Exhibition in
Hamamatsu City, Japan as a showcase for their current and future technolo-
gies. The theme of the Photon Fair was “What can we do
with light”. Each of the manufacturing divisions had show-
case themes, “MOEMS at the frontier of opto-semiconductor
devices”, “Electron tube technology; today and tomorrow”,
“Optical Measurement systems that support society” and
“Principles, applications and the future of laser technology”.
This exhibition demonstrated the vast range of products and
technologies offered by Hamamatsu Photonics and the diver-
sity of markets and applications in which they are used.
In this issue of Hamamatsu News, we will introduce many
new and enhanced products. We will also announce further
expansion of the facilities at Hamamatsu Photonics, Japan,
which will extend research and development and increase
their manufacturing capacity.
News 2009 Vol. 1 5
Development of PET tracers to realise early diagnosis of cancer
On the 8th January 2009 Hamamatsu Photonics K.K. (Teruo Hiruma, Chairman
of the Board and CEO, Hamamatsu Shizuoka pref. Japan) and Bayer Schering
Pharma (Andreas Fibig, Chairman of the Board of Management, Berlin Germa-
ny) have signed a licensing agreement for the use of novel substances in the
fi eld of molecular imaging for cancer. Within the agreement, Bayer Schering
Pharma acquires the worldwide exclusive rights for research, development and
commercialization of a group of molecules that specifi cally bind to malignant
tumor cells. In combination with positron emission tomography (PET), these
tracers could potentially improve the diagnosis of a variety of cancers.
“We have developed the novel tumor PET ligand based on a substance to be
incorporated into tumor cells through the carrier molecules highly expressed
on the tumor cell membrane. Since the chemical structure of this PET ligand
is designed not to be identifi ed by the carrier system on the normal cell
membrane, the location of tumor tissue can be detected with high contrast in
the tumor-bearing animals with PET. We utilized for development of the tumor
PET ligand the technology, knowledge and know-how cultured until now.”
said Dr. Hideo Tsukada, manager of PET Center, Hamamatsu Photonics.
Licensing agreement between Hamamatsu Photonics K.K. and Bayer Schering Pharma
“With this inlicensing in the fi eld of tumor diagnosis, we
ideally expand our existing project portfolio in the area
of molecular imaging of cancer“, explained Prof. Dr. Hans
Maier, head of the business unit Diagnostic Imaging at
Bayer Schering Pharma. “The medical need for a more
specifi c diagnosis of malignant tumors is very high, and
BSP anticipates in the long run to further improve the early
diagnosis of certain cancers with these substances.“
The substances described in the agreement specifi cally bind
to cancerous cells in the body. The tracers are labelled with
a short-life radionuclide and thus can be employed for PET
imaging. PET is a nuclear medicine imaging procedure, with
which molecular processes can be visualized in vivo, for
example those in tumor cells. In contrast to the presently
common procedures in PET imaging of cancer, these new PET
tracers could help to possibly better differentiate malignant
tumors from benign tissue alterations and to allow a more
precise staging of the cancer.
News 2009 Vol. 16
Company News
Construction of a new facility for Integral Optics
Hamamatsu Photonics announce the construction of a new Integral Optics
Building for the development of ultra-compact products which combine optical
systems with photonic devices.
The new facility will be located in the grounds of the Central Research
Laboratory, Hamamatsu City, Japan and the ground breaking ceremony was
held on the 7th January 2009.
The Integral Optics Building will have four fl oors and 6,067 square metres of
fl oor space. It will serve as a technology centre for the many manufacturing
divisions of Hamamatsu Photonics and will house both the R&D groups, and
the equipment that is used, for the development of integral optics based prod-
ucts. It will also enable Hamamatsu to consolidate it’s expertise for the various
technologies related to integral optics, which until now had been distributed
throughout the various divisions of the company. These technologies include
those for optical systems design, optical thin fi lm manufacturing and MOEMS/
opto-nanotechnology device fabrication.
The Central Research Laboratory currently has cafeterias in many different
buildings and the entire 4th fl oor of the new building will provide a multi-
purpose cafeteria hall to provide the researchers with a communal place to
meet, exchange ideas and enhance mutual communication.
Through this consolidation the company will be better positioned to
accumulate new know-how in integral optics and improve effi ciency in new
product development.
Concept drawing of Integral Optics Building.
News 2009 Vol. 1 7
The opening ceremony of the new “Product Management Centre” was held
on the 11th November 2008. The new building is located in the grounds
of Hamamatsu Photonics’ Central Research Laboratory, Hamamatsu City,
Japan. The new Centre will house the company’s Product Management
Division and contains a radio wave anechoic chamber for the measurement of
electromagnetic emission and susceptibility to electromagnetic interference of
their products.
Hamamatsu Photonics new facility for EMC evaluation of products
Hamamatsu Photonics are pleased to announce the expansion of their
Electron Tube Division facility in Iwata City.
The offi cial groundbreaking ceremony for New Building #2 was held on the
12th December 2008. The new building will be constructed on the site of the
former Building #2, but will provide approximately 4 times the fl oor space of
the original facility.
Building #2 will be 15,447 square metres and will house 200 people with R&D
and production for scintillators, spot light sources, xenon lamps, deuterium
lamps and other light sources and the novel Stealth Dicing technology.
The Scintillator Product Division will occupy approximately 50% of the total
space and the new facility will enable a 3-fold increase in production.
This exciting expansion will strengthen Research & Development and boost
the manufacturing capacity of Electron Tube Division to enable it to grow its
annual sales by 10 billion Japanese Yen.
Construction of a new manufacturing / R&D facility at Hamamatsu Photonics, K.K., Electron Tube Division
Completion of the new facility is around January 2010 with
manufacturing estimated to start in February 2010.
This new facility will enable the company to consolidate all
aspects of product testing, safety and environmental issues
such as electromagnetic compatibility evaluation, product
safety testing, environmental management, export control and
medical device safety management, in one building. Consoli-
dation of these functions will allow Hamamatsu Photonics
to more effi ciently and reliably comply with product safety
standards and other regulatory requirements.
Concept drawing of Building #2.
News 2009 Vol. 18
Application Report
Choosing the best UV detector for your application
The ultraviolet (UV) spectrum encompasses wavelengths that are shorter
than those visible to the human eye and longer than X-rays. When it comes
to deciding on the right detector technology to adopt in your UV application,
you will fi nd many options on the market each with a variety of pros and cons.
This article outlines the technologies that customers will come across on their
search for UV detectors and offers advice on performance levels.
Phototubes and Photomultipliers
Phototubes appeared about one hundred years ago and were the fi rst scientifi c
devices to measure UV light. Exploiting the photoelectric effect, phototubes
generally consist of a metallic or semiconductor material coated inside a
vacuum chamber to form a photo-cathode.
When UV photons of high enough energy are incident on the cathode, photo-
electrons are emitted into the vacuum and are attracted to the anode at high
electrical potential. The resulting photocurrent gives a quantitative measure-
ment of the intensity of the UV light arriving at the photocathode. The expres-
sion E=hc/ , where E is the photon energy, shows that the photocathode
material must have a work function greater than 5 eV to detect 254 nm light
from a mercury lamp.
In order to measure lower UV intensities, these original detectors were
replaced by the photomultiplier tube (PMT). A PMT’s vacuum tube contains a
series of intermediate dynodes that provide a high level of gain for the photo-
electrons emitted from the photocathode. This noise-free gain means that the
output at the PMT anode can be one million times greater than the original
signal.
Today, phototubes have largely been superseded by semiconductor detectors
(in particular photodiodes, which are discussed later) but the PMT’s ability
to produce highly amplifi ed signals without any increase in associated noise
levels, means that it remains the detector of choice in many analytical
measurement applications. Examples include UV-VIS spectrophotometers,
atomic absorption spectrometers and DNA sequencers to name a few.
Although most photocathodes are capable of detecting UV photons, one
limiting factor is the entrance window of the vacuum tube. This is usually made
of a borosilicate glass so UV photons below 300 nm cannot be detected by
the PMT. To detect shorter UV wavelengths, special window materials such as
synthetic silica (to 160 nm), UV glass (to 185 nm) and magnesium fl uoride (to
115 nm) are required (see Figure 1).
FIGURE 1. A selection of current photomultiplier tubes showing glass,ceramic and metal constructions ranging in size from around 1 cm to20 inches.
News 2009 Vol. 1 9
Photodiodes
Photodiodes are the UV detector of choice for many applications today.
Electron-hole pairs are generated within a semiconductor when its bandgap
is less than the energy of an absorbed UV photon (approximately 3.5 eV at
365 nm). The resulting photocurrent gives a measure of the incident UV light
intensity.
The most common semiconductor detector is the silicon photodiode (a
selection is shown in Figure 2). With a bandgap of 1.12 eV, this device can
detect from 400 nm right through to around 1100 nm. Silicon oxides usually
form on the front surface of the photodiode during its fabrication, which act as
a passivation layer. As this is essentially a glass layer, it absorbs UV radiation
making most silicon photodiodes insensitive to UV light.
That said, it is possible to produce silicon devices that are highly sensitive to
UV radiation with quantum effi ciencies in excess of 80% by modifying the
fabrication and passivation processes. As with vacuum tubes, using a quartz
glass window permits detection down to 190 nm and both VUV and extreme
UV wavelengths can be detected using a photodiode without any window.
Today, many other semiconductor materials that have higher bandgap energies
than silicon are available on the market. Materials such as GaAsP, GaN and
SiC have the advantage of being more “UV specifi c” but as they are not
manufactured in such large volumes they tend to be far more expensive than
comparable silicon photodiodes, with wider variations in performance from
batch-to-batch.
It is important to be aware that photodiodes used to detect UV light can age
quite signifi cantly over time. For example, you could see the sensitivity of
the device degrade and the dark current (or noise) of the detector increase.
Hamamatsu has been perfecting its UV silicon photodiode process since the
early 1970s and now achieves very low ageing characteristics (see Figure 3).
Applications that make use of UV-sensitive silicon photodiodes fall under two
broad categories. The fi rst is analytical applications such as UV-VIS spectro-
photometers, DNA sequencers, blood and urine analysers, pollution monitor-
ing, semiconductor inspection, and clinical chemistry analysers. The second
is industrial and consumer applications including sun exposure meter, boiler
fl ame monitor, water sterilization, germicidal lamp monitor, curing of inks and
resins and more.
FIGURE 2. A selection of UV silicon photodiodes.
FIGURE 3. This tracks the sensitivity of Hamamatsu UV silicon photodiodes over four years showing that the performance is stable to within ~0.5% even at 250 nm (deep UV).
The following sub-classifi cations are applied to UV light:
UVA (315 to 400 nm) is also known as “black light”. These wavelengths are
present in sunlight and cause the skin to tan, however, too much exposure
destroys both vitamin A and the collagen fi bres in organic tissue.
UVB (280 to 315 nm) causes sunburn and over exposure can severely damage
the eyes and skin, as well as result in a variety of melanomas.
UVC (200 to 280 nm) is far more energetic and dangerous than UVB. UVC is
sometimes referred to as germicidal UV as it is deadly to most forms of life, but
luckily these wavelengths are completely absorbed in the Earth’s ozone layer.
Light in this range is useful in a range of scientifi c measurements.
VUV stands for vacuum ultraviolet and spans from 200 down to 10 nm. These
wavelengths are absorbed by oxygen in the Earth’s atmosphere so measurements
of VUV are usually made in vacuum conditions.
Classifying UV wavelengths
News 2009 Vol. 110
Imaging applications
Various versions of both vacuum tube and semiconductor technology are
available for imaging applications. Image intensifi ers (shown in Figure 4) for
example are based on the same photocathode and vacuum tube technology as
PMTs but instead of having an anode output, they use a micro-channel plate
(MCP) to multiply the photoelectrons onto an output phosphor screen. This
gives a green image with very high signal gain that is often associated with
night vision applications. UV sensitive intensifi er tubes are used in a variety of
specialised analytical and bioscience applications, often looking at very low
levels of fl uorescence.
Semiconductor imaging devices fall into two main classifi cations: CMOS
and CCD. CMOS and CCD imagers are both fabricated from silicon, and like
photodiodes, should be capable of detecting and imaging UV radiation. CMOS
sensors are essentially a matrix of individual silicon photodiode pixels. Devices
also incorporate an “on chip” multiplexor (sequential switch) and a charge
amplifi er as well as additional electronic functions all fabricated using a CMOS
semiconductor process.
Most consumer CMOS devices are not sensitive to UV light due to the silicon
oxide layer on the surface of the semiconductor. However, as with silicon
photodiodes, it is possible to modify the fabrication process to produce UV
sensitive CMOS image sensors.
Most commercial CCD products used for digital imaging are similarly not
sensitive to UV radiation. Again, this is due to the presence of silicon oxides
and polysilicon gate electrodes on the front surface of the sensor, which
absorb UV and even blue light.
To produce a CCD that is sensitive to UV, it is necessary for light to enter the
semiconductor from the rear (back) side. To maintain the image resolution,
the silicon substrate must also be “thinned” to just 20 or 30 microns. This
requires more complicated silicon processing and sophisticated handling and
packaging of the delicate thinned wafer. These additional steps make the
production of so-called “back-thinned” CCDs signifi cantly more expensive
than consumer-type visible CCDs. The benefi ts however are a sensor with a
quantum effi ciency much greater than 50% in the UV range and over 90% in
the visible. Examples of back-thinned CCDs are shown in Figure 5.
FIGURE 4. A selection of image intensifi er tubes.
FIGURE 5. A variety of back-thinned CCDs, some with integrated peltier coolers to reduce dark signals allowing extended integration times for low-light-level imaging.
Many companies supply the various UV detectors outlined in
this article, however only Hamamatsu Photonics manufactures
all of the technologies described and can offer advice on the
most suitable device for any application.
Author: Tim Stokes, Hamamatsu Photonics UKThis article fi rst appeared in OLE Magazine June 2008.
Application Report
SOLID STATE PRODUCTS
News 2009 Vol. 1 11
SSD for LAT/FGST(Fermi Gamma-ray Space Telescope)
A certifi cate of appreciation sent by NASA
SSD wafer
Large surface-area sensors for gamma-ray telescope mounted in FGST
The FGST (Fermi Gamma-ray Space Telescope) is a man-made satellite jointly
developed by Japan and the US. The detector instrument (LAT: Large Area
Telescope) in this satellite uses approximately 10,000 SSD (silicon strip
detectors) that we have developed. These SSD are sensitive to high-energy
particles including gamma-rays and have a large number of strip-shaped active
areas made by sophisticated semiconductor process technology. This allows
measuring the energy and position of the incident gamma-rays. The FGST will
observe high-energy gamma-rays emitted from giant black holes in the Galaxy
and there are hopes that it will fi nd evidence of new laws of physics. We
received a certifi cate of appreciation from NASA for our contribution to this
project.
InGaAs image sensor integrated in “Ibuki”
Earth observation sensors mounted in the "Ibuki (GOSAT)" greenhouse gas observing satellite
The main cause of global warming is carbon dioxide which is emitted by
factories and the cars we use in our daily lives. The Kyoto Protocol adopted
in 1997 established limits starting with the advanced industrialized countries
who would strive to lower their carbon dioxide emissions (goal of 6 to 8%
reduction). The greenhouse gas observing satellite "Ibuki" was launched on
January 23, 2009 to observe the entire Earth from space and send us detailed
data on the concentration distribution of carbon dioxide which is the major
cause of greenhouse gases. A greenhouse gas observation sensor (TANSO),
which serves as the observation device in the "Ibuki" satellite, uses various
sensors we manufactured.
SOLID STATE PRODUCTS
News 2009 Vol. 112
NEW NEW NEWPRELIMINARY
The MPPC is a semiconductor photodetector with high gain and high quantum
effi ciency capable of photon counting at room temperatures. Our wide-ranging
MPPC product line includes single-element types with active areas of 1 mm by
1 mm, large-area arrays, and TE-cooled types. We also provide MPPC modules
to help users easily obtain the superior characteristics offered by the MPPC
technology.
Line-up of MPPC & MPPC module
MPPC
TypeMetal
CeramicPlastic
(surface-mount type)Array
TE-cooled
Photo
Type No.S11028
series
S10362-11
series
S10362-11
series
S10362-33
series
S10362-11
series
S10931
series
S10984
series
S10985
series
S11064
series
Effective active area
(mm)1 x 1 1 x 1 1 x 1 3 x 3 1 x 1 3 x 3
1 x 4
(1x4ch array)
6 x 6
(2x2ch array)
12 x 12
(4x4ch array)
Pixel size (µm)
[Number of pixels]
25 x 25
[1600]
25 x 25
[1600]
25 x 25
[1600]
25 x 25
[14400]
25 x 25
[1600]
25 x 25
[14400]
25 x 25
[1600/ch]
25 x 25
[14400/ch]25 x 25
[14400/ch]
50 x 50
[400]
50 x 50
[400]
50 x 50
[400]
50 x 50
[3600]
50 x 50
[400]
50 x 50
[3600]
50 x 50
[400/ch]
50 x 50
[3600/ch] 50 x 50
[3600/ch] 100 x 100
[100]
100 x 100
[100]
100 x 100
[100]
100 x 100
[900]
100 x 100
[100]
100 x 100
[900]
100 x 100
[100/ch]
100 x 100
[900/ch]
Spectral response range (nm) 320 to 900
MPPC module
C10507-11 series C10751 series
Standard type
(Built-in S10362-11 series)
CE-compliant type
(Built-in S10362-11 series)
SOLID STATE PRODUCTS
News 2009 Vol. 1 13
MPPC® (Multi-Pixel Photon Counter)S10931 series
NEW
Photon detection effi ciency vs. wavelength (measurement example)Ph
oto
n d
ete
ctio
n e
ffic
ien
cy* (
%)
Wavelength (nm)
0
10
20
30
40
50
60
100
90
80
70
300 400 500 600 700 800 900
(Ta=25 deg.C.)
* Photon detection efficiency includes effects of crosstalkand afterpulses.
S10931-050P
KAPDB0157EB
Dimensional outlines (unit: mm)
KAPDA0125EA
0.925 ± 0.15
4.35
0.42
5 ±
0.15
1.0
Index mark 0.2
Active area
3.0 × 3.0
1.45
0.3
3.8
5
1.0
Photosensitive
surfaceCathode
Anode
New type of Si photon-counting device, Active area: 3 x 3 mm
The MPPC is a new type of photon-counting device made up of multiple
APD (avalanche photodiode) pixels operated in Geiger mode. The MPPC is
an opto-semiconductor device with excellent photon-counting capability and
which also possesses great advantages such as low voltage operation and
insensitivity to magnetic fi elds.
Features
Excellent photon-counting capability (excellent detection
effi ciency versus number of incident photons)
Room temperature operation
Low bias (below 100 V) operation
High gain: 105 to 106
Insensitive to magnetic fi elds
Excellent time resolution
Compact size
Simple readout circuit operation
Applications
Fluorescence measurement
Biological fl ow cytometry
DNA BIO-chip sequencer
Environmental analysis
PET
High-energy physics experiments
Electrical and optical characteristics (Typ. Ta=25 deg.C., unless otherwise noted)
Parameter SymbolS10931
Unit-025P -050P -100P
Fill factor*1 - 30.8 61.5 78.5 %
Spectral response range 320 to 900 nm
Peak sensitivity wavelength p 440 nm
Recommended operating
voltage range- 70 ±10*2 V
Dark count*3 - 4 6 8 Mcps
Dark count Max.*3 - 8 10 12 Mcps
Terminal capacitance Ct 320 pF
Gain M 2.75 x 105 7.5 x 105 2.4 x 106 -
*1: Ratio of the active area of a pixel to the entire area of the pixel.
*2: For the recommended operating voltage of each product, refer to the data attached to each product.
*3: 0.5 p.e. (threshold level).
Note: Each value was measured at recommended operating voltage.
The last letter of each type number indicates package materials (C: ceramic, P: plastic).
S10362-11 series S10931 series
SOLID STATE PRODUCTS
News 2009 Vol. 114
MPPC®
S11064 series, S10984 series, S10985 series
The MPPC is a so-called Si-PM (Silicon Photomultiplier) device. It is a photon-
counting device consisting of multiple APD pixels operating in Geiger mode.
Each APD pixel of the MPPC outputs a pulse signal when it detects one
photon. The signal output from the MPPC is the total sum of the outputs
from all APD pixels. The MPPC offers the high performance needed in photon
counting and is used in diverse applications for detecting extremely weak light
at the photon-counting level.
Arraying the MPPC chips enables effi cient coupling to scintillators. An MPPC
array can be coupled, for example, to LYSO (lutetium yttrium orthosilicate)
scintillators along with circuitry to confi gure a detector module likely to prove
ideal for PET (positron emission tomography) applications. This allows dual
modality imaging such as PET/CT and PET/MRI in nuclear medicine.
Specifi cations
ParameterS11064
Unit-025P -050P
Number of channels 16 (4 x 4) ch
Effective active area/ch 3 x 3 mm
Spectral response range 320 to 900 nm
Pixel size 25 x 25 50 x 50 µm
S11064 series: 4 x 4 ch array
The S11064 series is a 4 × 4 channel large-area MPPC array made up of
individual active areas that are each 3 mm by 3 mm and mounted in high
densities on SMD (surface mount device) packages. Characteristics of each
channel element are tested prior to assembly in order to minimize output
fl uctuations in gain uniformity even when operated with a single bias power
supply.
NEW
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 1 15
Specifi cations
ParameterS10984
Unit-025P -050P -100P
Number of channels 4 (1 x 4) ch
Effective active area/ch 1 x 1 mm
Spectral response range 320 to 900 nm
Pixel size 25 x 25 50 x 50 100 x 100 µm
S10984 series: 1 x 4 ch array
The S10984 series is a 4-channel MPPC linear array with active areas of
1 mm by 1 mm each. Due to its monolithic structure, there are no gaps
between elements.
Specifi cations
ParameterS10985
Unit-025C -050C -100C
Number of channels 4 (2 x 2) ch
Effective active area/ch 3 x 3 mm
Spectral response range 320 to 900 nm
Pixel size 25 x 25 50 x 50 100 x 100 µm
S10985 series: 2 x 2 ch array
The S10985 series is a 2 × 2 channel MPPC array with active areas of 3 mm
by 3 mm each. This array can be used as a large area MPPC with a total
active area of 6 mm by 6 mm. Due to its monolithic structure, there are no
gaps between elements.
NEW
NEW
SOLID STATE PRODUCTS
Spectral response
20
40
60
80
100
0
Re
lative
se
nsitiv
ity (
%)
KPICB0129EANWavelength (nm)
200 1000800600400 1200
(Typ. Ta=25 deg.C., VR=3.3 V)
S11154-01CT
Human eyesensitivity
News 2009 Vol. 116
Illuminance sensorsS11154-01CT
Photo IC diode improved margin of colour characteristics
S11154-01CT
Illuminance sensor with reduced colour temperature errors and with
spectral response nearly equal to human visual sensitivity.
The S11154-01CT is a photo IC diode that features lower colour temperature
errors in a range from 2800 K to 7200 K and provides spectral response nearly
equal to human visual sensitivity.
Electrical and optical characteristics (Typ. Ta=25 deg.C.)
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range - 480 to 640 - nm
Peak sensitivity wavelength p - 580 - nm
Dark current ID VR=5 V - 1.0 50 nA
Photocurrent IL VR=5 V, 2856 K
100 lx- 95 - µA
Rise time tr 10 to 90 %
VR=7.5 V
RL=10 k!
=560 nm
- 6.0 - ms
Fall time tf - 2.5 - ms
1 mm
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 1 17
Line-up of illuminance sensors (Applications include brightness adjustment for large screen TV and cell phone’s LCD backlight)
Type No. Product type OutputPackage
(mm)
Reverse voltage
[Supply voltage]
Spectral response
range (nm)
Photo current*
2856 K. 100 lx
Rise time
(ms)Photo
S9648-100Photo IC
diode
Analog
current output
"5 x 3.5t
(Top view)-0.5 to +12 V 300 to 820 0.26 mA 6
S9067-101Photo IC
diode
Analog
current output
3.2 x 2.7 x 1.1t
COB-0.5 to +12 V 300 to 820 0.26 mA 6
S10604Photo IC
diode
Analog
current output
2.0 x 1.25 x 0.8t
COB -0.5 to +12 V 300 to 820 0.3 mA 6
S10925Photo IC
diode
Analog
current output2.0 x 1.25 x 0.8t
COB
-0.5 to +12 V 300 to 820 0.0036 mA 0.06
S11154-01CTPhoto IC
diode
Analog
current output-0.5 to +12 V 480 to 640 0.1 mA 6
S9705
Light-to-
frequency
converter photo IC
Frequency output
(for direct
interface to
microcomputer)
3.0 x 4.0 x 1.3t
4-pin plastic[2.7 to +5.5 V] 380 to 640 50 kHz -
S11252-01WTPhoto IC
diode
Illuminance sensor
for I2C Interface
1.18 x 1.18 x 0.58t
WL-CSP[2.25 to +3.63 V] 490 to 650
3.1 counts/ lx
(Low gain)
28.8 counts / lx
(High gain)
-
*S9705: frequency output, S11252-01WT: Digital output.
NEW
NEW
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 118
Connection example of I2C interface
SCL
SCL:Serial clock
Address 3 Address 2 Address 1
SDA:Serial data
SDA
Microcomputer
EEP ROM LCD driverAmbient lightphotosensor/colour sensor
These sensors support I2C Fast mode (400 kHz) and operate on 2.25 to 3.6 V.
I2C interface-compatible photo IC using a small, highly reliable WL-CSP
Hamamatsu offers a new illuminance sensor and colour sensor that uses a WL-
CSP (wafer level-chip size package) to achieve small size and high reliability.
To ensure low power consumption, these sensors include an auto-sleep
function that automatically switches to standby mode after detection. This
makes them ideal for adjusting the image quality on liquid crystal monitors of
mobile devices and fl at-panel TVs.
Features
Supports I2C interface to allow direct connection to microcomputers.
These sensors support the I2C interface and can exchange data with a
microcomputer using two signal lines jointly usable with other devices. Their
digital output makes them easy to install into electronic devices such as cell
phones and fl at-panel TVs whose microcomputer is compatible with the I2C
interface.
WL-CSP makes devices even smaller and highly reliable.
The CSP (chip size package) measures only 1.18 × 1.68 ×
0.58 mm (S11058-78HT) and 1.18 x 1.18 x 0.58 mm
(S11252-01WT) and lead-free refl ow solder (260 deg.C.)
can be used.
S11059-78HT
Illuminance sensor/Colour sensor S11252-01WT/S11059-78HT
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 1 19
Dimensional outlines (unit: mm)
Illuminance sensor S11252-01WT Colour sensor S11059-78HT
(4 ×) 0.3 ± 0.05
0.7
3 M
ax.
0.0
8
1.18
0.5
8 ±
0.0
4
1.1
8
0.5
0.28 × 0.28
0.5
Vdd
GND
SCL
SDA
(0.008)
Index mark
Photosensitive
surface
Solder bump
Active area
Index mark
Front Back
Tolerance unless otherwise noted: ±0.05
Photosensitive
surface
0.4
5
0.0
08
Photosensitivesurface
Photosensitivesurface
Active area:0.11×0.14 mm/4×10 ch
Infared
Solder bump
Tolerance unless otherwise noted: ±0.05
Front
Activearea
0.5
(0.4
5)
0.7
3 M
ax.
0.0
80.5
8±
0.0
4
0.5 0.5
Indexmark
Indexmark
Back
[Enlarged active area]
Vdd
NC
GND
SCL
NC
SDA
1.68
1.1
8
(6×) f0.3
R
GB
KPICA0081EAN
Enlarged image
WL-CSP
KPICC0155EAN
Wire
Visiblecompensationfilter
Through-holeelectrode
Si chip
Si chip
Resist
Board
Solderbump
Solderbump
Glass
Resin
Conventionaltype
NEW
Cross section
S11059-78HT
SOLID STATE PRODUCTS
News 2009 Vol. 120
Block diagram
SDA
ADC
Light
SDA: serial data
SCL: serial clock
16
VDD
GND
SCLCurrent-frequencyconverter C
ount
er
Timer circuit
Regis
ter
I2C
inte
rface
Visible-cut filter
Photodiode
Spectral response
KPICB0131EA
NEW
Human eyesensitivity
3000
20
40
60
80
100
400 500 600 700 800 900 1000
S10949-78HT
(Typ.Ta=25 deg.C.)
Rela
tive s
en
siti
vit
y (
%)
Wavelength (nm)
Timing chart of sleep function
Formatting,measurement start
KPICC0157EA
Cu
rre
nt
con
sum
pti
on
Operatingmode
Integration time
Sleepingmode
I2Ccommand
Time
Idd
Idds
Readout
Illuminance sensor S11252-01WTA sensor for image adjustment which contributes tosaving energy
Features
Support I2C interface (Fast mode)
Converts illuminance into 16-bit digital data
Spectral response characteristics close to human eye sensitivity
Wide dynamic range
Allows microcomputer control for high/low gain selection,
gain adjustment (integration time setting), and sleep/continuous
measurement function selection
Low current consumption (100 µA Typ.)
Applications
LCD backlight adjustment for cell phones, notebook PC, etc.
Energy-saving sensor for large-size TV, etc.
Various types of light detection
Illuminance sensor/Colour sensor S11252-01WT/S11059-78HT
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 1 21
Block diagram
Visiblecompensationfilter Current-
frequencyconverter
B R G IR
VDD
SDA
SCL
GND
16
ADC
Timer circuit
Re
gis
ter
Co
un
ter
I2C
in
terf
ace
KPICC0152EAN
Spectral response
KPICB0132EBN
IR
(Typ.Ta=25 deg.C.)
Red
Blue
0
300 400 500 600 700 800 900 1000
0.1
0.2
0.3
0.4
Green
Rela
tive s
en
siti
vit
y (
A/W
)
Wavelength (nm)
Timing chart of sleep function
KPICC0158EAN
Sleeping mode
Integration time
Cu
rre
nt
con
sum
pti
on
Operatingmode
Time
Readout
I2Ccommand
Idds
Idd
R B IRG
Formatting,measurement start
Colour sensor S11059-78HT
Features
Converts red, green and blue light levels into 16-bit digital data
Visible and infrared light detection ideal for ambient light measurement
Wide dynamic range
Allows microcomputer control for high/low gain selection,
gain adjustment (integration time setting), and sleep/continuous
measurement function selection
Low current consumption (75 µA Typ.)
Applications
Brightness adjustment of RGB-LED backlight LCD for cell phones,
notebook PC, etc.
Image quality correction for large-size TV, etc.
Various types of colour detection
SOLID STATE PRODUCTS
News 2009 Vol. 122
Output current
Previous type (SI0604)
0.3 mA 0.0036 mA
Output current Output current
(SI0925)NEW
Spectral response
S10925
Human eyesensitivity
20
40
60
80
100
0
Re
lati
ve
se
nsi
tivit
y (
%)
(Typ. Ta=25 deg.C., VR=5 V)
Wavelength (nm)
KPICB0128EAN
200 1000800600400 1200
Electrical and optical characteristics (Typ. Ta=25 deg.C.)
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range 300 to 820 nm
Peak sensitivity wavelength p - 560 - nm
Dark current ID VR=5 V - 50 500 pA
Photocurrent IL VR=5 V, 2856 K
100 lx2.5 3.6 4.7 µA
Rise time tr 10 to 90 %,VR=7.5 V
RL=10 k! , =560 nm
- 65 - µs
Fall time tf - 25 - µs
1 mm
Photo IC diodeS10925
Photo IC diode with low output current
S10925
Output current reduced by 2 orders of magnitude (compared to our
previous product)
The S10925 is a photo IC diode with output current reduced by 2 orders of
magnitude compared to our previous photo IC diode S10604.
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 1 23
Dimensional outline (unit: mm)
Focal
Plane
(2×)f3H7 depth3
(4×)M3 depth3
M6 depth5
KACCA0238EAN
(2×)1/4-20UNC depth5
80
65
55
50
35 1010
71.5
0.95
High-speed near-infrared image sensor ideal for a wide range of applications
The C10854 is a multichannel detector head containing an InGaAs linear
image sensor optimised for applications requiring high speed such as in SD-
OCT (spectral domain-optical coherence tomography)* and sorting machines.
*SD-OCT stands for spectral domain-optical coherence tomography. SD-OCT acquires information resolved in depth along the back
of the eye as a 3-dimensional image by using a spectrophotometer to analyze the intensity distribution of light refl ected from the
retina and the reference light.
Applications
SD-OCT (spectral domain-optical coherence tomography) Sorting machine Near-infrared spectroscopy
NEW
Specifi cations
Parameter Specifi cation
Built-in image sensor InGaAs linear image sensor G10768-1024D
Number of pixels 1024 pixels (256 pixels x 8 ports)
Pixel size 25 (H) x 100 (V) µm
Video output 16-bit, CameraLink (Base confi guration)
Interface RS-232C
Operation modeFree-running of internal synchronization,
external synchronization
Integration time Control in software, external trigger
Gain and offset Control in software
External output pulse Control in software
Weight 330 g
Note: InGaAs linear image sensor G10768-1024D is sold separately.
Specifi cations (Typ. Ta=25 deg.C.)
Parameter G10768-1024D Unit
Peak sensitivity wavelength 1.55 µm
Saturation charge 0.25 pC
Dark current 0.5 pA
RMS noise voltage (readout noise) 2 mV rms
Saturation voltage amplitude 2.5 V
Photo response non-uniformity 5 %
1024 pixels, high-speed InGaAs linear image sensor
G10768-1024D has 1024 pixels, yet offers high-speed line rate of 41000
lines/s Max.
Features
High-speed (5 MHz) operation
CameraLink
InGaAs multichannel detector head C10854
SOLID STATE PRODUCTS
Dimensional outline (unit: mm) Spectral response (measurement example)
(Ta=25 deg.C.)
Ph
oto
sen
siti
vit
y (
A/W
)
0
0 . 1
0 . 2
0 . 3
Blue
Green
Red
Wavelength (nm)
300 400 500 600 700 800 900 1000 1100
KSPDB0295EAN
B
G
R
1.0
1.0
[Active area]
1.50.62
0.6
0.6
0.4
0.62
0.3
1.0
G
BR
3.0
1.6
KSPDA0174EBN
Index mark
Tolerance unless otherwise noted: ±0.2
Photosensitive
surface
Electrode
News 2009 Vol. 124
Colour sensorS10917-35GT
Compact colour sensor with superior cost performance
The S10917-35GT is a compact colour sensor with a 3-channel photodiode
mounted in one package, and sensitive to red, green and blue light. An
infrared-cut fi lter is formed on the active area. This colour sensor is ideal for
monitoring the brightness of RGB-LED backlight LCD in hand-held devices.
Electrical and optical characteristics (Typ. Ta=25 deg.C., per element)
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range
Blue 390 to 530
nmGreen 470 to 600
Red 590 to 680
Peak sensitivity wavelength p
Blue - 460 -
nmGreen - 540 -
Red - 620 -
Photo sensitivity S
Blue ( = p) 0.15 0.2 0.25
A/WGreen ( = p) 0.18 0.23 0.28
Red ( = p) 0.12 0.17 0.22
Dark current ID VR=1 V, All element - 1 50 pA
Temperature coeffi cients of ID TCID - 1.12 - time/deg.C.
Rise time tr VR=0 V, RL=1 k! , 10 to 90 % - 0.1 0.5 µs
Terminal capacitance Ct VR=0 V, f=10 kHz 5 12 25 pF
Absolute maximum ratings
Parameter Symbol Value Unit
Reverse voltage VR Max. 10 V
Operating temperature Topr -25 to +85 deg.C.
Storage temperature Tstg -40 to +85 deg.C.
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 1 25
Line-up of RGB colour sensors
Type No. TypeActive area size
(mm)Package
Peak sensitivity
wavelength
(nm)
Photo sensitivity # p
(nm)Photo
S9032-02 Photodiode "2.04 x 4.8 x 1.8t
6-pin (fi lter 0.75t)
R 620 R 0.16 (A/W) [ =620 nm]
G 540 G 0.23 (A/W) [ =540 nm]
B 460 B 0.18 (A/W) [ =460 nm]
S9702 Photodiode 1.0 x 1.0 3 x 4 x 1.3t
4-pin (fi lter 0.75t)
R 620 R 0.16 (A/W) [ =620 nm]
G 540 G 0.23 (A/W) [ =540 nm]
B 460 B 0.18 (A/W) [ =460 nm]
S10917-35GT Photodiode 1.0 x 1.03 x 1.6 x 1.0t
COB (On-chip fi lter)
R 620 R 0.17 (A/W) [ =620 nm]
G 540 G 0.23 (A/W) [ =540 nm]
B 460 B 0.2 (A/W) [ =460 nm]
S9706 Digital photo IC 1.2 x 1.24 x 4.8 x 1.8t
6-pin (fi lter 0.75t)
R 615 R 0.64 (LSB/lx) R 5.8 (LSB/lx)
G 540 G 0.45 (LSB/lx) G 4.1 (LSB/lx)
B 465 B 0.21 (LSB/lx) B 1.9 (LSB/lx)
S11059-78HT
I2C interface
compatible
photo IC
1.1 x 0.521.18 x 1.68 x 0.58t
WL-CSP (On-chip fi lter)
R 615 R 10.6 (counts/lx) R 108.3 (counts/lx)
G 530 G 8.3 (counts/lx) G 86.5 (counts/lx)
B 460 B 4.0 (counts/lx) B 40.6 (counts/lx)
IR 855 IR 3.7 (counts/lx) IR 25.8 (counts/lx)
NEW
NEWLo
wLo
w
Hig
hH
igh
SOLID STATE PRODUCTS
News 2009 Vol. 126
Digital compensation type APD moduleC10508
NEW
Frequency response
Block diagram
Line-up of APD modules
Temperaturemonitor
Voltagecontroller
High voltagegenerator
Microcomputer
Current-to-voltageconverter circuit
Powersupply
Signaloutput
(Ta=25 deg.C., M=250)108
107
106
105
104
Ph
oto
sen
siti
vit
y (
V/W)
Frequency (Hz)
(M=250)
X-axis:500 mV/div., Y-axis: 200 ns/div.
Digital temperature-compensation, high-stability APD module
The C10508 is an APD module with temperature compensation that can be
accurately controlled by microcomputer to maintain the multiplication factor
(gain). It operates from a ±5 V power supply and the gain can be easily
adjusted when needed.
Features
Gain fl uctuation with temperature: ±5% Max.
Ambient temperature: 0 to + 40 deg.C., M=250)
Gain setting:
10 to 250 times (7 steps) by rotary switch
5 to 400 times (any setting) by PC command
Frequency bandwidth: DC to 10 MHz
Applications APD evaluation Power meter Low-light-level detection
Specifi cations (Typ. Ta=25 deg.C., =800 nm, unless otherwise noted) Photoelectric section (Si APD)
Parameter Symbol Condition Value Unit
Active area A "1.0 mm
Spectral response range 400 to 1000 nm
Peak sensitivity wavelength p 800 nm
Photo sensitivity S M=1 0.5 A/W
Gain M Adjustable by switch or serial communication -
Temperature stability of gain 0 deg.C. to 40 deg.C., M=250 ±5.0 Max. %
SOLID STATE PRODUCTS
News 2009 Vol. 1 27
APD module (C10508)
SOLID STATE PRODUCTS
News 2009 Vol. 128
High-performance image sensors (S10747-0909)
SOLID STATE PRODUCTS
Spectral response
(Typ. Ta=25 deg.C.)
0
100
90
80
70
60
50
40
30
20
10
200 400 600 800 1000 1200
Wavelength (nm)
Qu
an
tum
eff
icie
ncy
(%
)
S10747-0909
Standard typeback-thinned CCD
Enhanced near-infrared sensitivity, made possible by using fully-depleted CCD technology
The S10747-0909 is a back-thinned CCD area image sensor that delivers
drastically improved near-infrared sensitivity by the widened depletion layer.
Features
Quantum effi ciency: 70% ( =1000 nm, Ta=25 deg. C.)
Pixel size: 24 x 24 µm
512 x 512 pixels
Specifi cations (Typ. Ta=25 deg.C.)
Parameter S10747-0909 Unit
Pixel size 24 x 24 µm
Number of pixels 512 x 512 pixels
Thickness of depletion layer 200 µm
Quantum
effi ciency
=400 nm 40
% =650 nm 90
=1000 nm 70
Charge-to-voltage conversion factor 1.6 µV/e-
Full well capacity 200 ke-
Readout noise 30 e- rms
Dark current (-70 deg.C.) 1 e-/pixel/s
Depletionlayer
BIAS
Blue light Infrared light
CCD surface
Light incidentsurface
GND
Depletionlayer
Blue light Infrared light
CCD surface
Light incidentsurface
Depletionlayer
GND
Blue light Infrared light
Chargediffusion
Neutralregion
CCD surface
Light incidentsurface
FIGURE 1. Ordinary back-thinned CCD. FIGURE 2. When no bias voltage is applied to thick silicon.
FIGURE 3. When a bias voltage is applied to thick silicon.
Structure of fully depleted back-thinned CCD
In ordinary back-thinned CCDs the silicon substrate is only a few dozen
microns thick. This means that infrared light is more likely to pass through the
substrate (see Figure 1), thus resulting in a loss of quantum effi ciency. Thicken-
ing the silicon substrate increases the quantum effi ciency in the near-infrared
region but also makes the resolution worse since the generated charges diffuse
into the neutral region unless a bias voltage is applied (see Figure 2). Fully
depleted CCDs use a thick silicon substrate that has no neutral
region when a bias voltage is applied and therefore deliver
high quantum effi ciency in the infrared region while maintain-
ing a good resolution (see Figure 3). One drawback, however,
is that the dark current becomes large so that these devices
must usually be cooled to about -70 deg.C. during use.
Fully depleted type
News 2009 Vol. 1 29
High-performance CCD image sensors for measurement instruments S10747-0909NEW
SOLID STATE PRODUCTS
News 2009 Vol. 130
Mini-spectrometer TG seriesC11118GA
NEW
Long-wavelength near-infrared mini-spectrometer
The C11118GA mini-spectrometer is sensitive to longer wavelengths (up to
2.55 µm) compared to our former model, the C9914GB (sensitive up to
2.2 µm).
Features
Spectral response range: 0.9 to 2.55 µm
Using a Hamamatsu G9208-256W InGaAs linear image
sensor extends the spectral response range up to 2.55 µm.
Compatible with USB 2.0 interface
Compatible with external trigger
Allows external trigger mode by changing the operation mode.
Applications
Measurement of C-H group absorption (2.3 µm band)
Soil analysis and component analysis
Spectral response of image sensor (G9208-256W)
T= 25 deg.C.
T=-20 deg.C.
Wavelength (µm)
(Typ.)
00.5 1.0 1.5 2.0 3.02.5
1.5
0.5
1.0
KMIRB0047EAN
Ph
oto
sen
siti
vit
y (
A/W
)
Electrical characteristics
Parameter Specifi cation Unit
A/D conversion 16 bit
Integration time 6 to 10000 (Typ.) µm
Interface USB2.0 -
USB bus power current consumption 250 mA
Power supply for cooling element 5/2.8 V/A
Power supply for cooling fan 12/0.2 V/A
Optical characteristics
Parameter Specifi cation Unit
Spectral response range 0.9 to 2.55 µm
Spectral resolution 20 nm
Wavelength reproducibility ±0.8 nm
Wavelength temperature dependence 0.08 nm/deg.C.
Spectral stray light -30 dB
Broadband stray light -25 dB
General ratings/Absolute maximum ratings
Parameter Value Unit
Dimensions 142 (W) x 218 (D) x 80 (H) mm
Image sensorInGaAs linear image sensor
(G9208-256W)-
Number of pixels 256 pixels
Slit 140 (H) x 250 (V) µm
Optical NA 0.22 -
Optical fi bre connector SMA905D -
Operating temperature +5 to +30 deg.C.
Storage temperature -20 to +70 deg.C.
SOLID STATE PRODUCTS
News 2009 Vol. 1 31
Hamamatsu has developed and produced various types of mini-spectrometers
designed for spectral detection in the ultraviolet to near-infrared region. These
include compact and low-cost models, high-sensitivity models (containing a
back-thinned CCD image sensor), and cooled models with low noise. To further
extend our product line, we have a newly added thumb-sized ultra-compact
type (C10988MA) and an infrared-enhanced type with sensitivity up to 2550
nm (C11118GA).
Wider spectral response range
mn 0002mn 0001mn 002
2200 nm
2550 nm
Conventional line-up
New line-up
Spectral response range
More compact than ever before
For laboratory and research use For assembly into other
equipment
For mobile devices
C10988MA
NEW
Long-wavelength type
C11118GA
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 132
Type No. TypeSpectral response range (mm) Spectral resolution
Max. (nm)Image sensor
200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600
C10082CATM-UV/VIS-CCD
High sensitivity6
Back-thinned type CCD
image sensorC10082CAH
TM-UV/VIS-CCD
High resolution1 (Typ.)
C10082MDTM-UV/VIS-MOS
Wide dynamic range6 CMOS linear image sensor
C10083CATM-VIS/NIR-CCD
High sensitivity8 (320 to 900 nm)
Back-thinned type CCD
image sensorC10083CAH
TM-VIS/NIR-CCD
High resolution1 (Typ.) (320 to 900 nm)
C10083MDTM-VIS/NIR-MOS
Wide dynamic range8 CMOS linear image sensor
C9404CATG-UV-CCD
High sensitivity3
Back-thinned type CCD
image sensorC9404CAH
TG-UV-CCD
High resolution1 (Typ.)
C9404MCTG-UV-MOS
Wide dynamic range3 CMOS linear image sensor
C9405CATG-SWNIR-CCD
High sensitivity5 (550 to 900 nm)
Back-thinned type CCD
image sensor
C9405MCTG-SWNIR-MOS
Wide dynamic range5 (550 to 1100 nm) NMOS linear image sensor
C9406GCTG-NIR
Non-cooled type7
InGaAs linear
image sensor
C9913GCTG-cooled NIR-1
Low noise (cooled type)7
C9914GBTG-cooled NIR-2
Low noise (cooled type)8
C11118GATG-cooled NIR-3
Low noise (cooled type)20
C11007MARC-VIS-MOS
Spectrometer module9
CMOS linear
image sensorC11008MA
RC-SWNIR-MOS
Spectrometer module8
NEW
TM s
erie
sTG
ser
ies
TG s
erie
sR
C s
erie
s
OEM model
Type No. TypeSpectral response range (mm) Spectral resolution
Max. (nm)Image sensor
200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600
C11009MARC-VIS-MOS
Spectrometer head9
CMOS linear
image sensorC11010MA
RC-SWNIR-MOS
Spectrometer head8R
C s
erie
s 340 to 780
640 to 1050
OEM model (ultra-compact type)
Type No. TypeSpectral response range (mm) Spectral resolution
Max. (nm)Image sensor
200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600
C10988MA ultra-compact type 14 CMOS linear image sensor340 to 750
200 to 800
320 to 1000
200 to 400
500 to 1100
900 to 1700
1100 to 2200
900 to 2550
340 to 780
640 to 1050
NEW
Mini-spectrometer line-up
SOLID STATE PRODUCTS
News 2009 Vol. 1 33
Mini-spectrometerC10988MA
NEW
SEM image of grating
Image sensor Input light
Through-hole slit
Bump electrode
Glass wiring board
Grating made by nano-imprint
Lens
Diffractedlight
Multiple MEMS technologies are applied to downsize the C10988MA mini-spectrometer.
Thumb-sized "ultra-compact spectrometer" made a reality by advanced MOEMS technology!
The C10988MA is a thumb-sized (27.6 × 13 × 16.8 mm) spectrometer head
developed by merging our MEMS (Micro-Electro-Mechanical Systems) and
image sensor technologies.
Besides a CMOS image sensor chip integrated with an optical slit by etching,
the C10988MA employs a grating that is formed on a convex lens by nano-
imprint. Since our sensors and optical systems are manufactured in-house, they
offer a high degree of design freedom to meet various market needs.
MOEMS (Micro-Opto-Electro-Mechanical-Systems)
MEMS is attracting a lot of attention recently as a technology for innovating
semiconductor devices. We are integrating this MEMS technology with
optical technology to develop radically new MOEMS technology to create
sophisticated and versatile products that are smaller and cheaper than ever
before.
This spectrometer is available for OEM customers only.
MEMS technology
Etching
Nano-imprint
Bonding
Optical technology
Optics technology
Image sensors
IC technology
10 mm
Image sensors used in various types of mini-spectrometers
SOLID STATE PRODUCTS
News 2009 Vol. 134
Grating pattern
Master board
Condenser
Replica resin
Master board
Nano-imprint technology
Simplifying the optical system
Nano-imprint technology is used to produce replica gratings, which
transfers the grating pattern onto a glass body. Replica resin is coated
on the top of a convex lens, and the grating is replicated on the lens
by pressing the grating pattern against the resin while simultaneously
irradiating it with ultraviolet light.
Application example -2 (MOEMS technologies)
Etching technology
Integrating a slit with an image sensor
Deep etching is used to form a 75 × 750 µm slit on CMOS image
sensor chips made in-house at Hamamatsu. These devices deliver
high positioning accuracy because the slit is formed using the same
photomask as the image sensors.
Application example -1 (MOEMS technologies)
CMOS chip
Slit
Alkaline etching
Deep etching
CMOS chip (back) Cross section of through-hole slit Replica grating SEM image of grating
Features
Thumb size: 27.6 × 13 × 16.8 mm
Weight: 9 g
Spectral response range: 340 to 750 nm
Spectral resolution: 14 nm
Designed to be built into equipment
Applications
Mobile measurement equipment
Colour monitor of printer, large size display
Optical characteristics
Parameter Specifi cation Unit
Spectral response range 340 to 750 nm
Spectral resolution
(spectral response half width)14 nm
Wavelength reproducibility ±0.5 nm
Spectral stray light -25 dB
Electrical characteristics
Parameter Specifi cation Unit
Driving voltage 5 V
Power consumption 30 (Typ.) mW
Video rate 200 kHz
General ratings/Absolute maximum ratings
Parameter Specifi cation Unit
Image sensorNumber of pixels 256 pixel
Pixel size 12.5 (H) x 1000 (V) µm
Slit 75 (H) x 750 (V) µm
Optical NA 0.22 -
Operating temperature +5 to +40 deg.C.
Storage temperature -20 to +70 deg.C.
27,6 mm
16,8 mm
13 m
m
Mini-spectrometerC10988MA
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 1 35
Spectral resolution vs. wavelength
0
300 350 400 450 500 550 600 650 700 750
5000
10000
15000
20000
25000
30000
35000
40000
45000
KACCB0201EAN
(Ta=25 deg.C.)
A/D
co
un
t
Wavelength (nm)
Measurement example using a white LED
7
300 350 400 450 500 550 600 650 700 750
8
9
10
11
12(Ta=25 deg.C.)
KACCB0199EAN
Sp
ect
ral re
solu
tio
n (
nm
)
Wavelength (nm)
Dimensional outline (unit: mm)
2.6
16.8
Slit position
2.5
4
Slit
0.075 × 0.75
Window 3
0.2
1.0
29.6
0.5
1
1.5
1.0
5.0
CLK
GND
NC
ST
NC
Gain
EOS
NC
Vdd
Video
0.75
16
27.6
13
13
SOLID STATE PRODUCTS
News 2009 Vol. 136
Spectral response
2 43 5 610 9
10 11
10 10
Wavelength (µm)
D*(
cm・H
z1/2 /
W)
CO2, SOx
KIRDB0430EAN
C-H type CO NOx
Parameter P11120-901 Unit
Active area 1.0 mm
Peak sensitivity wavelength 4.8 µm
Cut-off wavelength 5.8 µm
Detectivity 8.5×1010 cm.Hz1/2/W
Element temperature -196 deg.C.
Specifi cations
Fast response, high sensitivity and high reliabilityinfrared detector in the 5 µm spectral band
The P11120-901 is an infrared detector that provides high sensitivity in the
5 µm spectral band due to our unique crystal growth technology. The InAsSb
photodiode used in this detector has a planar structure that ensures fast
response and high reliability. It is ideal for gas analysis applications including
CO2, SOx, CO and NOx analysis. On request, Hamamatsu also manufactures
detector elements with peak sensitivity at longer wavelengths by changing the
composition ratio of As and Sb.
Applications
Gas analysis
Thermometers (radiometers)
Thermal imaging
Remote sensing
FTIR
Spectrophotometry
Features
High-speed response
High sensitivity
High reliability
InAsSb photodiodeP11120-901
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 1 37
Back-thinned CCDS11071/S10420-01 series
Etaloning characteristics
NEW
Conventional type
Wavelength (nm)KMPDB0284EAN
Re
lati
ve s
en
siti
vity
(%
) S11071/S10420-01
(Ta=25 deg.C.)
65
70
75
80
85
90
95
100
880 900 920 940 960 980 1000
Specifi cations (typical example) (Typ. Ta=25 deg.C.)
Parameter S11071 series S10420-01 series Unit
Pixel size 14 (H) x 14 (V) µm
Spectral response range 200 to 1100 nm
CCD node sensitivity 5.5 6.5 µV/e-
Full well capacity (Horizontal) 200 300 ke-
Readout noise 22*1 6*2 e-rms
Dark current (MPP mode) 50 e-/pixels/s
Dynamic range 9090 50000 -
Anti-blooming With anti-blooming (> FW x 1000) -
Readout speed (Max.) 10 0.5 MHz
*1: Readout speed 2 MHz
*2: Readout speed 20 kHz
Improved etalon characteristics, high-speed type and low-noise types are available
These are back-thinned CCDs designed for spectrophotometers. Two types are
available, high speed and low noise, both with improved etalon characteristics.
Features
High-speed type: S11071 series
Low-noise type: S10420-01 series
Number of pixels
1024 × 16 pixels (S11071-1004, S10420-1004-01)
1024 × 64 pixels (S11071-1006, S10420-1006-01)
2048 × 16 pixels (S11071-1104, S10420-1104-01)
2048 × 64 pixels (S11071-1106, S10420-1106-01)
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 138
InGaAs PIN photodiodeG10899 series, P3207-07, S10783, S10784, S11049-02SB
Spectral response
Wavelength (µm)KIRDB0408EAN
NEW
Si photodiode S1337-BR
InGaAs PIN photodiode(standard type)
G10899 series
(Typ. Ta=25 deg.C.)
Ph
oto
sen
siti
vit
y (
A/W
)
1.2
0
0.2
0.4
0.6
0.8
1.0
0.19 1.21.00.80.60.4 1.81.61.4
Spectral response
Wavelength (µm)
D* (λ, 600, 1)
(cm・H
z1/2/W
)
KIRDB0391EAN
(Typ.)
1 765432107
108
109
1010
PbSe photoconductive detectors P3207-07 Peak sensitivity wavelength 4.3 µm, room temperature operation.
The P3207-07 is a PbSe photoconductive detector that offers fast response
and allows room temperature operation. It is suited for applications such as
detection of CO2 gas concentration. Its D* is improved 2.5 times compared to
our previous product (P3207-05).
InGaAs PIN photodiode G10899 series Wide spectral response range (0.5 to 1.7 µm)
The G10899 series is an InGaAs PIN photodiode designed to cover a wide
spectral response range from 0.5 µm to 1.7 µm. While standard InGaAs PIN
photodiodes have a spectral response range from 0.9 µm to 1.7 µm, the
G10899 series has sensitivity extending to 0.5 µm on the shorter wavelength
side. A wide range of spectrum can be detected with a single detector.
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 1 39
Si PIN photodiode S10783, S10784High-speed APC (auto power control) detectors
The S10783 and S10784 are high-speed APC detectors developed for
monitoring laser diodes with a peak wavelength of 660 nm or 780 nm. The
S10783 is designed for surface mount and the S10784 has a plastic package
with 3 mm lens.
Specifi cations (Typ. Ta=25 deg.C.)
Parameter S10783 S10784 Unit
Active area size 0.8 3.0 mm
Peak sensitivity 760 nm
Photo sensitivity !=660 nm 0.46 0.45
A/W!=780 nm 0.52 0.51
Cut-off
frequency*
!=660 nm 300MHz
!=780 nm 250
*VR=2.5 V, RL=50 "
Photo IC for optical switch S11049-02SBHigh-speed APC (auto power control) detectors
The S11049-02SB is a photo IC made up of a photodiode with spectral
response from 380 nm to 1120 nm (peak sensitivity wavelength: 760 nm), a
preamp, and a buffer. The allowable ambient illuminance is 4000 lx (Min.).
Specifi cations (Typ. Ta=25 deg.C.)
Parameter S11049-02SB Unit
Supply voltage 5 V
Photo sensitivity (!=950 nm) 200 V/mW
Output linearity ±10 %
Cut-off frequency 1.45 MHz
Allowable background light level Min. 4000 lx
Output noise Max. 1.8 V rms
SOLID STATE PRODUCTS
News 2009 Vol. 140
Radiant fl ux vs. forward current
KLEDB0312EAN
NEW
(Typ. Ta=25 deg.C.)
Forward current (mA)
0
Rad
ian
t fl
ux (
mW
)
70605040302010 80
4.0
3.0
2.0
1.0
0
L10660
L7850(conventional type)
Infrared LED L10660 1450 nm band / High-power LED
The L10660 is a high-power infrared LED that emits light at a peak wavelength
of 1450 nm. It delivers optical power 2.6 times higher than the conventional
type (L7850) and is ideal for use in combination with InGaAs PIN photodiodes.
Infrared LED L10596 Small emission spot LED using current confi ned chip
The L10596 is an infrared LED with a microball lens bonded to the current
confi ned chip surface. This combination ensures a uniform light-emitting area
and narrow directivity. By forming a light-refl ecting layer between the light-
emitting area and the GaAs substrate, the L10596 delivers a radiant output
power 1.5 times higher than our previous model (L2791).
Parameter Typ Unit
Peak emission wavelength 870 nm
Spectral half width 35 nm
Forward voltage 1.6 V
Pulse forward voltage* 3.3 V
Radiant fl ux 3.0 mW
Cut-off frequency 15 MHz
*IF = 0.45 A
Infrared LEDL10596, L10660, L10762
NEW
NEW
Electrical and optical characteristics (Typ. Ta=25 deg.C., VF=50 mA)
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 1 41
Infrared LED L10762RC type LED for POF data communication
The L10762 is a red LED optimized for POF data communication. A microball
lens is bonded to the surface of the LED chip to enhance the coupling effi ciency
to an optical fi bre. This increases the output at the fi bre tip to deliver an output
about 7 times higher than the conventional type (L9907).
Microball lens
NEW
SOLID STATE PRODUCTS
News 2009 Vol. 142
25 Mbps FOT for MOST Low voltage (3.3 V) operation
Features
Transmitter photo IC: employs RC-LED
Receiver photo IC:
Low current: 24 mA Max. (operating mode)
15 µA Max. (sleeping mode)
Wide operating temperature range:
-40 to +105 deg.C.
Transmitter/Receiver photo IC for optical link L10663-01, S10664-01
NEW
Parameter Symbol Min. Typ. Max. Unit
Current consumption Icc - - 40 mA
Peak emission wavelength !p 630 650 670 nm
Spectral half width (FWHM) #! - 20 30 nm
Fibre coupled optical output1*1 Po1 -9.5 - -2 dBm
Fibre coupled optical output2*2 Po2 -13 - -4.5 dBm
Extinction ratio re 10 - - dB
Rise time at pulse drive tr - - 5.5 ns
Fall time at pulse drive tf - - 5.5 ns
Pulse width variation tpwv 19.99 - 24.29 ns
Pulse width distortion
(average value)tapwd -1.39 - +1.39 ns
*1: Rcont=13.5 k"*2: Rcont=27 k"
Parameter Symbol Min. Typ. Max. Unit
Current consumption (operation mode) Icco - - 24 mA
Current consumption (sleeping mode) Icco - - 15 µA
Receiver level Popt3 -25 - -2 dBm
Vout
High level output voltage Voh 2.5 - Vcc +0.3 V
Low level output voltage Vol 0 - 0.4 V
Rise time tr - - 9 ns
Fall time tf - - 7 ns
Pulse width variation tpwv 17.09 - 29.79 ns
Pulse width distortion (average value) tapwd -2.69 - +6.49 ns
Operation to sleeping mode transition receivable level Ps -39 - -25.5 dBm
Sleeping mode to operation transition receivable level Pop -39 - -25.5 dBm
Mode outputHigh level output voltage Vmh 2.5 - - V
Low level output voltage Vml - - 0.5 V
Electrical and optical characteristics (Receiver photo IC S10664-01) (Vcc=3.135 to 3.465 V, FS=44.1 kHz, Ta=-40 to +105 deg.C.)
Electrical and optical characteristics (Transmitter photo IC L10663-01) (Vcc=3.135 to 3.465 V, FS=44.1 kHz, Ta=-40 to +105 deg.C.)
SOLID STATE PRODUCTS
News 2009 Vol. 1 43
For instrument illumination control
Light-to-frequency converter photo IC
Photo IC diode (Illuminance sensor)
For ambient light level detection, daylight detection (automatic headlight control)
Light-to-frequency converter photo IC
Photo IC diode (Illuminance sensor)
For MOST network
Transmitter/receiver
photo IC
For jog dial
Photo IC, Infrared LED
Encoder module
For steering wheel angle sensing
Photo IC, Infrared LED
For laser radar
Si PIN photodiode, Si APD
For sun load sensing (automatic climate control)
Si photodiode, Sunsensor
Light dimmers for LCD
Light-to-frequency converter photo IC
Photo IC diode (Illuminance sensor)
For rain sensor
Si photodiode, Infrared LED
For ambient light level detection, (automatic anit-glare mirror)
Light-to-frequency converter photo IC
Photo IC diode (Illuminance sensor)
Hamamatsu opto-semiconductor devices for automotive applications
To contribute to greater safety and convenience for vehicle drivers, Hamamatsu
Photonics has developed and produced opto-semiconductors using our
advanced semiconductor process and packaging technologies.
SOLID STATE PRODUCTS
News 2009 Vol. 144
Selection guide
Type No. ScintillatorScintillator specifi cations
Application exampleAfterglow Cross-talk
S5668-021 None (epoxy resin potting) - - General photometry
S5668-121 CsI (TI) Large LowX-ray non-destructive inspection of slow-moving objects (baggage inspection, etc.)
X-ray applications where signal can be integrated
S5668-321 Ceramic Small Low X-ray non-destructive inspection of fast-moving objects (baggage inspection, etc.)
S5668-421 Phosphor sheet Small May occur. X-ray non-destructive inspection (at low X-ray intensity)
Absolute maximum ratings (Typ. Ta=25 deg.C., per element)
Parameter Symbol S5668-021 S5668-121/-321/-421 Unit
Reverse voltage VR Max. 10 10 V
Operating temperature Topr -20 to +60 -10 to +60 deg.C.
Storage temperature Tstg -20 to + 80 -20 to +70 deg.C.
Long and narrow format using multiple arrays
The S5668 series is a 16-element Si photodiode linear array. Each element has
an active area of 1.175 mm (width) × 2.0 mm (height) and is arrayed at an
element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm
(1 inch) long PC board. By linearly arranging two or more pieces of the S5668
series, a long and narrow photodiode array can be easily confi gured at the
same element pitch. For X-ray detection applications, the S5668-121 with a
CsI (Tl) scintillator, the S5668-321 with a ceramic scintillator and the S5668-
421 with a fl uorescent paper are also available.
Features
Active area: 1.175 × 2.0 mm/one element
Element pitch: 1.575 mm
Mounted on a 1-inch (25.4 mm) long PC board
Long and narrow format using multiple arrays
Applications
Non-destructive inspection, etc.
S5668-021
S5668-421
S5668-321
S5668-121
S5668-021
16-element Si photodiode arrayS5668-021/-121/-321/-421
SOLID STATE PRODUCTS
News 2009 Vol. 1 45
Electrical and optical characteristics (Ta=25 deg.C., per 1 element)
Parameter Symbol Condition Min. Typ. Max. Unit
Spectral response range ! - 320 to 1100 - nm
Peak sensitivity wavelength !p - 960 - nm
Photo sensitivity S!=540 nm 0.27 0.31 0.35
A/W!=!p 0.54 0.60 0.66
Dark current ID VR=10 mV - 5 30 pA
Rise time trVR= 0 ,V RL=1 k"
10 to 90 %- 0.1 - µs
Terminal capacitance Ct VR=0 ,V f=10 kHz 20 30 40 pF
Noise equivalent power NEP VR=0 V, !=540 nm - 9.3 x 10-15 - W/Hz1/2
X-ray sensitivity iscX *
-021 - - -
nA-121 - 6.8 -
-321 - 2.8 -
-421 - 3.2 -
*These are for reference (X-ray tube voltage 120 kV, tube current 1.0 mA, aluminium fi lter t=6 mm, distance 830 mm), X-ray sensitivity depends on the X-ray equipment operating and setup
conditions.
Emission spectrum of scintillator and spectral response
S5668-121
KMPDB0282EB
Rela
tive e
mis
sio
n in
ten
sity
(%
)
Qu
an
tum
eff
icie
ncy
(%
)
Wavelength (nm)
(Typ.)
002100010 8006004002000
40
20
60
80
100
0
40
20
60
80
100Spectralresponse
Emission spectrumof CsI (TI)scintillator
S5668-321
Typical scintillator characteristics
Parameter Condition CsI (TI) Ceramic scintillator Unit
Peak emission wavelength 560 520 mm
X-ray absorption coeffi cient 100 kev 10 7 -
Refractive index at peak emission wavelength 1.74 2.2 -
Decay constant 1 3 µs
Afterglow 100 ms after X-ray turn off 0.3 0.01 %
Density 4.51 7.34 g/cm3
Relative emission intensity CWO=1.0 1.8 1.2 -
Colour Colour Transparent Light yellow-green -
Sensitivity non-uniformity ±10 ±5 %
KMPDB0281EB
Rela
tive e
mis
sio
n in
ten
sity
(%
)
Qu
an
tum
eff
icie
ncy
(%
)
Wavelength (nm)
(Typ.)
002100010 8006004002000
40
20
60
80
100
0
40
20
60
80
100Spectralresponse
Emission spectrumof ceramic scintillator
SOLID STATE PRODUCTS
News 2009 Vol. 146
Photodiode array combined with signal processing IC for X-ray detection
The S8866-64G-02/-128G-02 are photodiode arrays with an amplifi er and
a phosphor sheet attached to the active area for X-ray detection. The signal
processing circuit chip is formed by CMOS process and incorporates a timing
generator, shift register, charge amplifi er array, clamp circuit and hold circuit,
making the external circuit confi guration simple. A long, narrow image sensor
can be confi gured by arranging multiple arrays in a row.
A dedicated driver circuit, the C9118 series (sold separately) is available. (Not
compatible with the S8865-256G.)
Features
Large element pitch: 5 types available
S8865-64G: 0.8 mm pitch x 64 ch
S8865-128G: 0.4 mm pitch x 128 ch
S8865-256G: 0.2 mm pitch x 256 ch
S8866-64G-02: 1.6 mm pitch x 64 ch
S8866-128G-02: 0.8 mm pitch x 128 ch
5 V power supply operation
Simultaneous integration by using a charge amplifi er array
Sequential readout with a shift register
(Data rate: 500 kHz Max.)
Photodiode arrays with amplifi erS8866-64G-02/-128G-02
NEW
Low dark current due to zero-bias photodiode operation
Integrated clamp circuit allows low noise and
wide dynamic range
Integrated timing generator allows operation
at two different pulse timings
Detectable energy range: 30 k to 100 keV
Applications
Line sensors for X-ray detection
Specifi cations
Parameter Symbol S8865-64G S8865-128G S8865-256G S8866-64G-02 S8866-128G-02 Unit
Element pitch P 0.8 0.4 0.2 1.6 0.8 mm
Element diffusion width W 0.7 0.3 0.1 1.5 0.7 mm
Element height H 0.8 0.6 0.3 1.6 0.8 mm
Number of elements - 64 128 256 64 128 -
Active area length - 51.2 51.2 51.2 102.4 102.4 mm
Line rate - 7800 3900 1950 7800 3900 lines/s
SOLID STATE PRODUCTS
News 2009 Vol. 1 47
Electrical characteristics [Typ. Ta=25 deg.C., Vdd=5 V, V (CLK)= V (RESET) = 5 V]
Parameter Symbol
S8865-64G
S8866-64G-02
S8865-128G
S8866-128G-02 Unit
Min. Typ. Max. Min. Typ. Max.
Clock pulse frequency*2 f (CLK) 40 - 2000 40 - 2000 kHz
Output impedance Zo - 3 - - 3 - k "
Power consumption P - 100 - - 180 - mW
Charge amp
feedback
capacitance
High gainCf
- 0.5 - - 0.5 -pF
Low gain - 1 - - 1 -
*2: No condensation
Photodiode arrays with amplifi er
Direction of scan
102.4 -0+0.3
P2.54 × 11 = 27.94
25.0
± 0
.1
A *
1
12
80.011.2
12.0
3.0
1
(4 ×) 2.2
(12 ×) 0.76
Photodiode 1 ch Active area
Signal processingIC chip
Fluorescentpaper *2
1.6
2.54
1.6
1.27
5.0
5.02.9
5
KMPDA0226EA
Type No.
S8866-64G-02
A
8.2
S8866-128G-02 8.0
*1: Distance from the bottom of the board to the center of active areaBoard: G10 glass epoxyConnector: PRECI-DIP DURTAL 800-10-012-20-001
*2: Photodiode array with phosphor sheet· Material: Gd2O2S:Tb· Phosphor thickness: 300 µm Typ.· Detectable energy range: 30 k to 100 keV
KMPDA0226EA
LASER PRODUCTS
News 2009 Vol. 148
Mid Infrared Quantum Cascade Laser (QCL) L10195-9673H
A new compact quantum cascade laser with built-in TE-cooler
Hamamatsu Photonics present a new quantum cascade laser; the L10195-
9673H. The L10195-9673H, CW (continuous-wave) operation, DFB (distributed
feedback) QCLs are packaged in an industrial, hermetically sealed housing;
HHL-package. A one stage TE-cooler and QCL chip are integrated in the HHL-
package. This confi guration provides precise and stable temperature control of
the QCL chip. The typical emission wavelength is 9.67 µm (1034 cm-1), which is
suitable for ammonia or ozone detection at levels of sensitivity to the order of
ppm to ppb.
Application of QCLs
Infrared tunable laser absorption spectroscopy is an extremely effective tool for
the detection of molecular trace gases. The QCL offers attractive new features
for infrared absorption spectroscopy: high sensitivity, high selectivity, non-
destructivity, compactness, portability and real-time monitoring.
Developing and producing the QCLs
The active region of the QCLs is designed by means of Band Structure
Engineering. Our unique SPC (single phonon resonance-continuum) structure
of the active region has advantages of high reliability, high reproducibility and
design fl exibility. Due to the SPC-structure, it has been possible to develop
CW QCLs covering a wide wavelength range of 4 to 10 microns. Hamamatsu
Photonics has capabilities of design, growth, processing, packaging and
testing of the QCLs.
Features
Emission wavelength: 9.67 µm (1034 cm-1)
CW operation at room temperature
Spectral single-mode: DFB-structure
Package: HHL-package
Include TE-cooler
Parameter Symbol Min. Typ. Max. Unit
Radiant output power e 10 15 - mW
Emission wavelength !p 9650 9670 9696 nm
Spectral resolution linewidth #! - - 0.2* cm-1
Forward voltage Vf - - 10.0 V
Lasing threshold current Ith - 0.8 0.9 A
Operating temperature Top (qcl) -5 - +30 deg.C.
TEC current Ic - - 3.7 A
TEC voltage Vc - - 12.9 V
*: Limited by resolution of spectrometer when tested.
Specifi cations
ELECTRON TUBE PRODUCTS
News 2009 Vol. 1 49
PhotoIon bar L9915
Remove electrostatic discharge over a wide area
Electrostatic charge removal with soft X-rays offers substantial advantages
over other methods:
Features
No air fl ow (good for powdered products)
No cleaning needed
Ozone free
High speed
Dust free
Until now, the ability to perform quick neutralization of electrostatic charges
over large volumes has been complicated and space-consuming.
The L9915 combines three PhotoIonizer heads in one housing to cover a wider
area with a single unit. Combined with a controller, the unit can very quickly
remove electrostatic charges over a width of more than 70 cm.
Applications include removing electrostatic charges in packaging of powdered
products, production of ICs, LCDs or plasma panels, high speed moving thin
materials like fi lms or printed matter.
Author: Henrik Sievers, Hamamatsu Photonics Norden
High-speed moving objects
Large size glasses
Specifi cations
Parameter Description/Value
Ionization Method Soft X-ray exposure
Ionization Source Soft X-ray tube
Soft X-ray TubeTube Voltage (DC) 9.5 kV
Beam Angle 120 degrees
Recommended Static Charge Removal Distance 15 cm to 100 cm
Input Voltage (AC) 100 V to 240 V (50 Hz / 60 Hz)
Power Consumption (AC) 33 W Max.
Ionization Source Guarantee Life 8000 hours
Control Cable Length 10 m
WeightBar (Main body) Approx. 1.7 kg
Controller Approx. 1.2 kg
Note: L9915 is the model number in a set of "Bar: L9916", "controller: C9918" and "control cable". When ordering a new head
for replacement, specify head model number is L9917.
Function Description/Value
Operating Ambient Temperature 0 deg.C. to +40 deg.C.
Storage Temperature -10 deg.C. to +60 deg.C.
Operating Ambient Humidity Less than 60 %
Storage Humidity Less than 80 %
Principle
Ions generated near the fi lm surface serve to effi ciently remove the electrostatic charges. Even though the fi lm moves at high speed, the electrostatic charges can be reliably neutralized. In addition, ions generated by soft X-rays penetrating through the fi lm, also neutralize the electrostatic charges in the reverse side of the fi lm, so that the electrostatic removal effect is greatly improved.
Ions are generated over the entire area exposed to X-rays so electro-static charges can be quickly removed even from large glass surface.
ELECTRON TUBE PRODUCTS
News 2009 Vol. 150
Lightningcure®
LC-L2
UV LED Module
The new Lightningcure® LC-L2 from Hamamatsu Photonics offers a totally
new and unique concept for UV LED light sources and is specially designed for
integration into automated manufacturing lines.
Emitting a maximum UV light intensity of 7.5 W / cm2 at 365 nm, the LED
provides high stability emission, minimal thermal effects and very low power
consumption. The LED lifetime of 20,000 hours is considerably longer than that
of lamps in conventional curing systems. Several different condenser lenses can
be chosen, allowing the customer to select the ideal emission profi le for their
application. Additionally the LC-L2 is ideal for operation inside a clean room as
the unit requires no fan for cooling, solving the problems of vibration and dust.
Hamamatsu’s new Lightningcure® concept is very fl exible and allows
simple control and operation via several different interfaces. Controlling the
lightsource directly via a PLC enables a small and low-cost system consisting
of only the LED-Head with cable and small driver unit. Alternatively it is
possible to operate up to 8 LED-Heads with driver hubs via a PC or by using
the optional control box.
Having gained a solid reputation for high quality spot light sources over many
years, Hamamatsu consolidated all its technologies and experience in the new
LC-L2 Lightningcure®.
This is the UV light source you’ve been waiting for!
Author: Anita Schroedl, Hamamatsu Photonics Germany
Features
Slim body
Long life
No fan
High stability
High light output
Low power consumption
Applications
UV adhesive curing
UV irradiation experiments
Specifi cations
Parameter Description/Value
UV Irradiation Intensity 7500mW/cm2
Peak Wavelength 365 nm ± 5 nm
Class 3B (JIS C 6802:2005)
LED Life 20 000 hours
Input Voltage (DC) 12 V to 24 V
Power Consumption (Max.) 8 W
Cooling Method Air cooling without blower
Operating Temperature Range +5 deg.C. to +35 deg.C.
Storage Temperature Range -10 deg.C. to +60 deg.C.
Operating/ Storage Humidity Range Below 80% (No condensation)
Applicable StandardEN61326:1997+A1: 1998 ClassA
EN61010-1 2001
Warranty Period 1 year
NEW
ELECTRON TUBE PRODUCTS
News 2009 Vol. 1 51
High voltage power supplyC10764 series
New High Voltage Power Supply Units
The C10764 series are compact, PC-board mountable, high voltage power
supply units specifi cally designed for photomultiplier tubes (PMT).
The C10764 series are available in two variants: the C10764, 0 to
-1250 V supply, and the C10764 -50, 0 to +1250 V supply. Both power
supplies output a maximum of 1mA. The newly developed circuitry achieves
high performance and low power consumption whilst maintaining low drift
and ripple noise (0.01% typ.), excellent temperature dependence of ±0.01%/
deg.C. and a total stability that is 10 times that required of a PMT.
High voltage control is easily achieved using either an external potentiometer
or external low voltage 0 to +5 V supply, allowing a wide variable output
range with a fast time response. The C10764 series also offers improved
failsafe functions including protection against reversed power input, reversed
or excessive control voltage and continuous overloading.
Features
Compact and lightweight
High stability
Low power consumption
Fast response
Wide variable output range
Ample protective and failsafe functions
Applications
High voltage power supply for photomultiplier tubes
Author: Arnaud Bingono, Hamamatsu Photonics France
NEW
ELECTRON TUBE PRODUCTS
News 2009 Vol. 152
New high sensitivity photon counting head H10682-110
Counting Linearity and Overlight Detection Output
Dimensional outlines (unit: mm)
Relative Output Light
1.E+07
1.E+06
1.E+05
1.E+04
1.E+03
Ou
tpu
t C
ou
nt
(S-1
)
1.E+08
1.E+09
1.E+10
1.E+03 1.E+04 1.E+05 1.E+06 1.E+07 1.E+08 1.E+09 1.E+10 1.E+11 1.E+12
4V
0VOver Light Detection Output
Output Count
The H10682-110 is the fi rst photon counting photomultiplier tube (PMT)
module to integrate the newly developed and unique Super Bialkali (SBA)
photocathode. It achieves typical quantum effi ciency (QE) of 35% at a peak
wavelength of 330 nm and maintains a high QE across the entire spectral
response range of 280 nm to 700 nm.
This new module offers 30% higher output signal compared to conventional
photon counting heads using bialkali photocathodes, opening up new
possibilities in low light level detection.
The H10682-110 is built around Hamamatsu’s renowned metal package
photomultiplier tube (TO-8 package type), with integrated high-speed photon
counting circuit and high-voltage power supply circuit and only requires +5 V
input for simple operation.
To protect the PMT from over-exposure to bright light sources, the module has
a built-in 'over-light' detection circuit which will alert the user, allowing the
user to adjust their light source for optimum data acquisition.
Features
Excellent low light detection capabilites
Compact size (2/3 of H7155 series)
High sensitivity
No adjustment required
Low power consumption
Applications
Biomedical (Chemiluminescence and Bioluminescence)
Fluorescence detection
Other low level light detection
Author: Laurent Pansolin, Hamamatsu Photonics France
Specifi cations
Parameter Description/Value
Input Voltage +4.75 to +5.25 V
Spectral Response 280 to 700 nm
Effective Area 8 mm dia
Typical Dark Count 50 cps
Pulse-Pair Resolution 20 ns
NEW
ELECTRON TUBE PRODUCTS
News 2009 Vol. 1 53
Xenon lamp L10878
Spectral Distribution
TLS B0001EA
3000
20
40
60
80
100
400 500 600
WAVELENGTH (nm)
RE
LA
TIV
E I
NT
EN
SIT
Y (
%)
700 800
Visible short arc refl ector lamp
Features
High brightness over the visible spectral range
from 400 nm to 750 nm
Built-in condensing refl ector,
allowing easy coupling to optical fi bre
Compact size
Excellent lamp stability
Long lifetime (at least 2 times that of
comparable lamps in the market)
No arc point shift, allowing easy coupling to optical fi bre
and easy lamp replacement
Applications
Endoscopy
Microscopy
Illumination source for medical imaging
Fibre-optic light source for industrial inspection
The L10878 is a new long life 100W xenon short arc refl ector lamp which
emits light in the visible spectral range from 400 nm up to > 750 nm,
providing a bright white light illumination source. The built-in condenser
refl ector provides good light coupling into optical fi bre, making the lamp
particularly useful for medical and industrial endoscopes.
Author: Tim Stokes, Hamamatsu Photonics UK
Specifi cations
Parameter Description/Value
Lamp Rating Approx. 100 W
Arc Length 1.0 mm ± 0.1 mm
Focusing Angle Approx. 44 degrees
Lamp Current (DC) 7.0 A ± 0.5 A
Lamp Voltage (DC) Approx. 13.5 V
Light Output StabilityFluctuation 1.0 %
Drift ±0.5 %/h
Guaranteed Life*1 1000 h
Average Life 1500 h
Installation Orientation Horizontal ±15 degrees
Cooling Method Forces air cooling
Weight Approx. 150 g
*1: The life end is defi ned as the time when the light output intensity at all wavelengths falls to 50% of the Initial value or when
the output fl uctuation (p-p) exceeds 1.0%.
As the refl ector condenser is built-in, lamp replacement in
the fi eld is simple and there is no need for alignment or
calibration of an external optical system, as is the case with
conventional xenon arc lamps.
Using Hamamatsu’s expertise in electrode design, the lamp
has a typical operating lifetime in excess of 1500 hours,
around 3 times the longevity of other lamps currently in the
market, thus reducing the service period of any equipment
using this lamp.
NEW
ELECTRON TUBE PRODUCTS
News 2009 Vol. 154
UV-VIS light source L10706
S2D2 VUV miniature light source module
The L10706 is a miniature vacuum ultra-violet (VUV) light source unit, which
emits light in the spectral range from 115 nm up to 400 nm, with a peak
emission around 160 nm. The L10706 utilises a specialist magnesium fl uoride
window with high UV transmittance. This is vital as light below about 180
nm is not transmitted by regular or even specialist glass material, including
synthetic silica. Such short wavelength radiation is also absorbed by oxygen in
the surrounding air. The L10706 is also fi tted with an ICF-70 vacuum fl ange so
the lamp can be easily operated in an environment devoid of air.
The new VUV Deuterium lamp itself is housed inside a fl exible SUS tube,
allowing easy manipulation of the lamp position inside any equipment. The
high voltage required to drive the high power miniature VUV Deuterium lamp
is provided by the purpose built module, located in a separate unit, designed
to be placed outside of the vacuum chamber.
Author: Tim Stokes, Hamamatsu Photonics UK
Features
High brightness over the spectral range
from 115 nm to 400 nm
Compact, miniature size
Good lamp stability
Long lifetime
Flexible housing to allow easy manipulation
of lamp position
Easy lamp replacement
Unique VUV lamp cooling design
Applications
VUV spectrophotometer
Excitation light source
Photo-ionisation
Deep UV material studies
Electro-static removalGeneral characteristics
Parameter Description/Value Unit
Spectral Distribution 115 to 400 nm
Window Material MgF2 -
Light Angle ±7.5 degrees
Vacuum Flange*1 ICF-70 rotating fl ange -
Cooling Method*2Air-cooled
(Cooled air: 20 l/min to 30 l/min)-
Sealing Force Retention Below 1.33 x 10-4 Pa L/s (1 x 10-6 Torr L/s) -
WeightLight source: Approx. 500, Power supply:
Approx. 120g
Operation Ambient Temperature +10 to +35 deg.C.
Operation Ambient Humidity Below 80 (Ne condensation) %
Storage Temperature -10 to +60 deg.C.
Storage Humidity Below 80 (No condensation) %
*1: Use a copper gasket for sealing the light source unit´s vacuum fl ange and an O-ring for installing a replacement lamp.
*2: Cooling must be performed by supplying cooling air from the high-pressure tube.
Recommended operating conditions and characteristics (at 25 deg.C.)
Parameter Description/Value Unit
Warm-up Time 25 ± 5 s
Output Stability
(at 230 nm)
Fluctuation 0.05 %
Drift ±0.3 %/h
Guaranteed Life (230 nm) 1000 h
Input Voltage (AC)100 V to 240 V (100 V/200 V Automatic
selection), Single phase 50 Hz/60 Hz-
Power Consumption (Max.) 40 VA
ELECTRON TUBE PRODUCTS
News 2009 Vol. 1 55
MCP for TOF-MS F1551-074, F1094-074, F1552-074, F1217-074
Microchannel plates for TOF-MS
Hamamatsu Photonics introduce four new MCP detectors designed for TOF-MS
applications. Owing to their exceptional fl atness and resistance to warping,
these new MCPs produce very small timing jitter, typically 0.5 ns compared
to 4.6 ns exhibited by other MCPs available on the market. Additionally, the
narrow channel diameter, either 4 µm or 6 µm, contributes to the improved
timing jitter characteristics.
Using Hamamatsu’s advanced manufacturing techniques; it was possible to
produce MCPs with excellent resistance to warping, ideal for the demanding
environment of TOF-MS.
Features
Small channel diameter
Exceptional fl atness (little warping)
Highly robust
Small timing jitter
High speed
Applications
TOF-MS
Author: Lorraine Rolland, Hamamatsu Photonics France
Note:*1 at 1000 V *2 Below 1.3 x 10-4 Pa
Parameter F1551-06 F1551-074 F1094-074 F1552-074 F1217-074 Unit
Outer Size: A Ø17.9 Ø24.8 Ø32.8 Ø49.9 mm
Electrode Area: B Ø17 Ø23.9 Ø31.8 Ø49 mm
Effective Area: C Ø14 Ø20 Ø27 Ø42 mm
Thickness: D 0.2 0.3 mm
Channel Diameter 4 6 µm
Channel Pitch 5 7.5 µm
L/D 50 -
Open Air Ratio (Typ.) 60 %
Bias Angle $ 12 degrees
Gain (Min.)*1 1 x 104 -
Resistance 10 to 100 20 to 200 10 to 100 6.7 to 66 4 to 40 M"
Maximum Dark Current 5 x10-13 A/cm2
Maximum Linear Output Signal 10 % of strip current -
Supply Voltage (Max.) 1000 V
Ambient Temperature -50 to +70 deg.C.
Operating Pressure Condition
(Max.)1.3 x 10-4 *2 Pa
Dimensional outlines and specifi cations (unit: mm)
50 mm
NEW
SYSTEMS PRODUCTS
News 2009 Vol. 156
HCImage
HCImage Analysis combines the functionalities of Live and
Acquisition with full analysis capabilities. This gives the user
access to motion tracking, dynamic intensity analysis during
or post acquisition using macros. It has been optimised to
analyse the large images generated by the Hamamatsu
NanoZoomer slide scanner. Deconvolution and Visualization
options can be added to either Acquisition or Analysis to
reconstruct 3D images from a sequence.
Features
Full DCAM support
Image capture and time lapse
Control of motorized peripheral devices:
Multi-dimensional imaging
Motion tracking
Dynamic intensity analysis
Equation editor
Scheduler
High speed imaging: streaming
Applications
Fluorescence imaging: FRET, Q dots,
ratio imaging, TIRF, protein localization
Luminescence imaging: luciferase, aequorin
(X, Y, Z, !) scan: multiple site time lapse, Z scan
Multiprobe simultaneous imaging
Object counting and quantifi cation
Particle tracking
Membrane potential measurement
Software solution for scientifi c imaging
Hamamatsu introduces HCImage, a new software solution for life science and
materials imaging. HCImage is specifi cally designed to support Hamamatsu
DCAM, and has an easy-to-use interface with extensive functionality for
optimized workfl ow and increased effi ciency.
The new graphical user interface gives maximum space to the image, whilst
maintaining easy access to device control panel and image analysis during or
post acquisition.
There are three software modules available and you can select the best
combination of camera and software to match your application.
HCImage Live, supplied as standard with all Hamamatsu cameras, allows
image acquisition and time lapse recordings with visual feedback with live
intensity histogram. It also allows detection (threshold or manual) and simple
analysis (area, length etc.) of multiple objects in a single image.
HCImage Acquisition is the key to performing multi-dimensional imaging. It
offers the same functionality of Live, plus the ability to control a wide range of
motorized peripheral devices (microscope, shutter, fi lter wheel, fi lter exchanger).
With this one module, you can easily drive all your hardware and perform
complex acquisitions using the scheduler. This scheduler function also allows
easy programming of time lapse with multiple events. Furthermore, thanks
to our built-in Equation Editor, users can create their own measurements and
expand the already extensive list of 150 measurements available.
Author: Christelle Catone, Hamamatsu Photonics France
SYSTEMS PRODUCTS
News 2009 Vol. 1 57
HCImage Live HCImage Analysis
HCImage Acquisition
HCImage Analysis
SYSTEMS PRODUCTS
News 2009 Vol. 158
iPhemos SD
IC defect detection system with tester docking
The new iPhemos SD complements our product line-up of ‘state-of-the-art’
systems for defect localisation on integrated circuits.
There is a clear demand in IC failure analysis, for localisation of defects of
devices under dynamic operation conditions. In many cases this means that
it is necessary to connect a tester to a defect localisation system. Therefore,
we have extended our product line with the new iPhemos SD, an inverted
microscope system prepared for tester docking with a small footprint.
iPhemos SD is a modular microscope system for front and backside device
analysis which can be confi gured to include
- emission microscopy using InGaAs cameras
- laser scan microscopy e.g. with OBIRCH and soft defect localisation
According to customer preference, the iPhemos SD can be connected to tester
heads either by direct docking or by coupling the tester head and iPhemos
SD via a short cable interface. The iPhemos SD has been designed to fi t with
most commercial tester systems. Special attention has been paid to design a
compact and mobile system. It is possible to connect different tester systems
within a lab simply by moving the iPhemos SD.
The optical system of iPhemos SD can accommodate up to 5 different lenses
for macroscopic imaging (0.8 x lens), through to imaging in the Nanometer
scale with our solid immersion lens system “NanoLens”.
Author: Hubert Ortner, Hamamatsu Photonics Germany
Features
IC defect localisation with direct tester head docking
Flexibility to confi gure the system according
to specifi c needs
High mechanical and optical precision
High stability
800 mm height
Applications
Emission microscopy
OBIRCH
PLS
SDL
iPhemos SD main unit and operation rack.
NEW
SYSTEMS PRODUCTS
News 2009 Vol. 1 59
New Streakscope C10627
Fluorescence Lifetime Spectroscopy SystemFurther Improved
Streak technology has been established for many years as a high-end method
for time-resolved fl uorescence spectroscopy and this technology is employed in
Hamamatsu Photonics range of complete measurement systems.
Other well-known methods in this fi eld are time-correlated single photon
counting (TCSPC) using a PMT or MCP-PMT as a detector and gated spectros-
copy using a gated II-CCD. Compared to these methods, streak-based systems
offer two major advantages. The fi rst is its unsurpassed temporal resolution,
reaching into the sub-ps domain. The second is its "2-dimensional" measure-
ment method, yielding superior measurement effi ciency. The attached table
shows the fundamental comparison of these three major techniques.
A complete picosecond time-resolved fl uorescence system.
Fundamental comparison of TCSPC, Gated II-CCD and Streak
TCSPC Gated II-CCD Streak
Recording method
Records temporal
traces, but only at a
single wavelength
at spectra, but only
at a single wave-
length at a time.
The spectral axis
must be scanned
sequentially.
Records full spectra,
but only at a single
time position at a
time. The time axis
must be sampled
sequentially.
Records full
2-dimensional
time-resolved
spectra simultane-
ously, without any
scanning.
Can exploit high rep-rate sources yes no yes
Can exploit low rep-rate sources no yes yes
Yields Poisson statistics yes no yes
Typical lifetime ranges ps to ns ns to ms sub-ps to ms
In the case of the streak method, no valuable photons are lost and the
measurement times needed to achieve good data are dramatically reduced.
Therefore, even extremely weak samples can be measured within reasonable
times.
Like TCSPC, the streak method can also detect single photons and count them
individually, thereby giving excellent (Poissonian) measurement statistics. This
is important to achieve a large dynamic range (105:1 and more) and for correct
data analysis. Unlike TCSPC, a streak system can count photons even when
there are many photons in a single fl uorescence pulse, thereby even allowing
the use of light sources with a low repetition rate.
The brand-new C10627 streak detector is the successor of our renowned
"Streakscope" detector. It offers two big quantitative improvements:
The streak sweep repetition rate is further improved by a
full order of mag nitude. (This means it can integrate up to
20 million fully time-resolved spectra per second!) This will
give ten times shorter measurement times in the case of
very weak samples.
The maximum photon counting rate is improved by a factor
of about fi ve. This allows shorter measurement times in the
case of samples with stronger emissions.
Both improvements further extend the capabilities of these
systems, allowing effi cient measurements even in the most
demanding applications.
Author: Uwe Denzer, Hamamatsu Photonics Germany
The new C10627 with improved capabilities.
NEW
SYSTEMS PRODUCTS
News 2009 Vol. 160
LED light metering and photometry systems C9920 series
C9920-21
The C9920 series has been developed for characterisation of OLED materials
and devices by measuring the absolute photoluminescence quantum yield,
the external quantum yield of fl at OLED devices and their angle dependent
emission characteristics.
The series has been extended with features allowing the characterization of
LEDs and SMD LEDs. Like the established systems of the C9920 family the
new types use a PMA 12 CCD spectrometer coupled to a 5.3 inch integration
sphere by a fi bre bundle. The spectrometer employs a cooled back-thinned
chip for highest sensitivity. All systems can be upgraded easily to fi t other
applications.
The C9920-21 system measures the light distribution of LED devices operated
at a constant current or voltage with the sample mounted on a rotating stage.
The whole emission spectrum is measured for every emission angle. The system
also allows measurement of luminous intensity under CIE conditions.
Features
Software controlled rotating stage
IVL measurements
Measured parameters: Light distribution, luminous intensity, radiation
intensity, chromaticity, dominant wavelength, excitation purity, distributed
temperature, colorimetric parameters
SIGNAL INPUT
PHOTONIC MULTI-CHANNEL ANALYZER C10027
LED light distribution
optics
Sample holder for LED light distribution measurement(Bullet type, φ3 mm, φ5 mm)
Sample holder for LED light distribution measurement(For SMD LED mounted on board)
Auto rotating stage for LED light distribution measurement
DS102
Quantum yield measurement
software
PC
* Sample holders are selectable options.
Source meterPhotonic multichannel analyzer PMA-12
Integrating sphere unit (3.5 inch compact unit) for total luminous flux measurements
Light-shielding adapter for EL external quantum yield measurements
LED Light Distribution Measurement System C9920-21
NEW
Measurement in light distribution mode
Light distributions were measured under a constant current
or voltage while the angle was automatically changed by a
rotating stage. Since intensity distributions are measured as
a spectrum, this mode also measures changes in colorimetric
parameters at each angle along with changes in the luminous
intensity at each angle.
Measurement Examples
Measurement example(Variable current mode)
Measurement example (Light distribution mode)
SYSTEMS PRODUCTS
News 2009 Vol. 1 61
C9920-22
The C9920-22 system uses an integration sphere as sample chamber and
measures the total luminous fl ux and luminous effi ciency of LED devices.
Colorimetric parameters such as chromaticity and colour rendering are
determined simultaneously.
Features
Using an integration sphere as sample chamber the measurements does
not depend on the emission angle characteristics of the sample
The emission spectrum can be measured instantly for different current
values;
Measured parameters: Luminous fl ux, radiant fl ux, peak wavelength,
dominant wavelength, chromaticity, deviation, colour rendering, effective
power, voltage, current, electric effi ciency, external quantum effi ciency
As well as luminous fl ux and angle-dependent emission characteristics, the CIE
averaged LED intensity is also an important value in LED characterization. For
such measurement, the LED is not located inside the integration sphere but
coupled to it using special input optics.
Features
Coupling optics which meet CIE conditions A and B
Condition A: Field of view angle of 0.001 (2 degrees), distance 0.316 m
Condition B: Field of view angle 0.01 (6.5 degrees), distance 0.1 m
Measured parameters: Luminous intensity, radiation intensity, peak wave
length, FWHM, chromaticity, dominant wavelength, deviation, colour
rendering, effective power, voltage, current
Author: Tanja Schuettrigkeit, Hamamatsu Photonics Germany
SYSTEMS PRODUCTS
News 2009 Vol. 162
Operating Principle of TDI
TDI (Time Delay Integration):
Object MotionX-ray TDICamera
Object
X-ray souce
Shield box
Belt conveyor
TDI Sensor
Signal intensity
Time Delay Integration is a technology of scanning in which a frame transfer device produces a continuous video image of a moving object by means of a stack of linear arrays aligned with and synchronized to the motion of the object to be imaged in such a way that, as the image moves from one line to the next, the integrated charge moves along with it, providing higher resolution at lower light levels than is possible with a line-scan camera.
TDI camera line-up
Advanced TDI technology for high sensitivity and high speed applications
Hamamatsu Photonics TDI-CCD image sensor offers signifi cant improvements
in performance compared to standard sensors, particularly for low light level
and high speed applications.
High speed and high sensitivity (C10000 series)
The C10000 series of TDI line scan cameras, feature 128 vertical stages
ranging from 1024 pixel up to 4096 pixel as horizontal stages. The sensors
multiple output ports yields a high-speed line rate of up to 100 kHz and is
capable of bidirectional operation (image acquisition can be performed in
either direction or raster scan).
The structure of the TDI-CCD back-thinned sensors provides high sensitivity
over a broad range from 200 nm to 1100 nm, with extremely high QE in the
ultraviolet, visible and NIR region.
Specifi cations
1024 (H), 2048 (H) and 4096 (H) spatial resolution
with 128 (V) integration
Line rate up to 100 kHz
8/12 bit A/D converter
High sensitivity from UV to NIR
Low noise, versatile TDI camera (ORCA-TDI C4742-95-12ERT)
The ORCA-TDI uses an advanced CCD chip with high sensitivity
in VIS-NIR region and features good noise characteristics at
high frame rates. The peltier cooled hermetic vacuum-sealed
head can be cooled down to -20 deg.C., reducing dark noise
and minimising thermal drift. The ORCA-TDI is the camera of
choice for demanding scientifi c and industrial applications.
Specifi cations
1344 (H) spatial resolution with 1024 (V) integration
Line rate up to 8.8 kHz
12 bit A/D converter
Low readout noise (RMS) typ 8 electrons
Stable cooling -20 deg.C.
TDI-CCD sensors are able to capture clear images of fast-
moving objects by transferring signal charges from one pixel
to the next in the same direction and at the same speed as
the moving object. Through this process, the effective exposure
time is increased by a factor which is equal to the number of
the TDI stages in the sensor. This operation mode dramatically
boosts sensitivity to high levels, even when capturing fast
moving objects at low light intensity.
TDI-CCD sensors and cameras are ideal for a wide range of
applications including industrial inspection of moving objects,
semiconductor inspection, fl ow cytometry, UV detection, red
and near infrared fl uorescence detection.
SYSTEMS PRODUCTS
News 2009 Vol. 1 63
Qu
an
tum
eff
icie
ncy
(%
)
Wavelength (nm)
*This is typical, not guaranteed
900 700 4000
40
20
60
80
10
30
50
70
300 500 600 800 1000 1100
Qu
an
tum
eff
icie
ncy
(%
)
Wavelength (nm)
*This is typical, not guaranteed
800 1000 600 4000
40
20
60
80
100
10
30
50
70
90
200 1200
Qu
an
tum
eff
icie
ncy
(%
)
Wavelength (nm)
*This is typical, not guaranteed
1000 800 5000
40
20
60
80
10
30
50
70
400 600 700 900 1100
C9100-03 C4742-95-12ERT
Spectral response
Ultra high sensitivity, electron multiplication (EM-TDI Camera C9100-03)
The combination of EM and TDI technology provides seamless high speed
scanning for ultra low light objects. The proprietary hermetically sealed vacuum
chamber evacuated to 1.33 × 10-6 Pa (10-8 Torr) provides stable cooling at
-50 deg.C., even when the ambient temperature fl uctuates from 0 deg.C. to
+40 deg.C. . This stable cooling temperature contributes to a uniform EM gain
factor of 2000 times.
Cooled TDI Camera (C10990-930T)
The Cooled TDI Camera C10990-930T series combines all the benefi ts of high
speed operation, high sensitivity, low noise and wide dynamic range which is
essential where the aspect ratio of the subject being imaged is signifi cantly
asymmetric. Front-illuminated and back-thinned cooled sensors combined with
a wide range of resolutions make this camera ideal for all applications from UV
to NIR.
Specifi cations
1024 (H) spatial resolution with selection of 58,
122, 250 (V) integration
Front-illuminated or back-thinned CCD
Line rate up to 169 Hz
16 bit A/D converter
Stable cooling at 0 deg.C.
High sensitivity from UV to NIR
Specifi cations
1000 (H) spatial resolution with 1000 (V) integration
Line rate up to 30.9 kHz
High EM gain (2000x)
14 bit A/D converter
Stable cooling at -50 deg.C.
Various external synchronisation features
C10000 series
SYSTEMS PRODUCTS
News 2009 Vol. 164
3CCD Digital Colour (ORCA-3CCD-TDI C7780-20T)
The ORCA-3CCD-TDI digital colour camera incorporates three cooled TDI-
CCD chips, providing a rapid readout, high-resolution and superior signal to
noise ratio. The three colour CCDs employ an RGB prism to achieve extremely
high quality colour representation without colour blur, achieving performance
diffi cult to achieve with a single-CCD camera. The CCDs are the same as those
used in the ORCA-TDI, providing proven high quantum effi ciency and high
resolution, cooled to 0 deg.C. for high sensitivity detection.
Specifi cations
1344 (H) spatial resolution with 1024 (V) integration
Line rate up to 8 kHz
12 bit A/D converter
Stable cooling at -20 deg.C.
Total 36 bit colour resolution
X-ray TDI Camera (C10650 series)
The C10650 series X-ray TDI camera is ideal for in-line X-ray applications
which require high speed operation, high sensitivity and high resolution;
features often demanded in applications such as medicine and drug
inspection, printed circuit board (PCB) inspection and surface-mount
component inspection.
Geometrical magnifi cation is normally used to perform high resolution X-ray
inspection of very small objects. The X-ray TDI camera offers both wide
effective area and high resolution, achieving a large fi eld of view with high
resolution in one scan, also in case of wide area imaging.
Specifi cations
3072 (H) or 4608 (H) spatial resolution with 128 (V) integration
Line rate 2.262 kHz (Max. 1 x 1)
12 bit A/D converter
Direct X-ray imaging using fi bre optical plate with scintillator
Author: Mauro Bombonati, Hamamatsu Photonics Italy
Mounted Board
Back-fi ll under stacked parts can be seen. Wire bonding in the IC can be seen. Void of die-bond pad can be seen. Overlapping fi lms can be seen.
TDI camera line-up
SYSTEMS PRODUCTS
News 2009 Vol. 1 65
Sample Image
X-ray line scan camera C9750-27FCC,-FCD
C-Shaped X-ray Line Scan Camera for Tyre Inspection
Based on the established technology of the Hamamatsu X-ray line scan
camera series C9750 we now offer this outstanding type of camera for the
tyre market. The exceptional C-shape of this camera is optimized to meet the
demands in the tyre inspection fi eld.
Combined with a special X-ray source the Hamamatsu C9750-27FCC,-FCD
is able to scan a rotating tyre line by line. As a result of the special camera
geometry the entire volume of a tyre and its inner life can be captured during
such a scan. The cap of tyre as well as the two side walls.
The high sensitivity and wide dynamic range provide fast and excellent
detection of the carcase for outstanding and reliable inspection.
Features
Detection widths of 1382.4 mm
Wide sensitivity range from 25 kV to 160 kV
High scanning speed from 4 m/min up to 36 m/min
No gap (Modules gap < 1 pixel)
Specifi cations
Pixel Pitch: 0.4 mm
Number of pixels: 3456
Gd-Scintillator
Line rate: 0.167 kHz to 1.5 kHz
Pixel Clock: 5.33 MHz
A/D conversion: 12 bit
Digital Interface: RS422
Author: Stefan Kappelsberger, Hamamatsu Photonics Germany
NEW
SYSTEMS PRODUCTS
News 2009 Vol. 166
PMA-20 is a high speed photonic multichannel analyser with 100 µs temporal
resolution. It contains a light-effi cient grating spectrograph, back-thinned TDI-
CCD sensor (simultaneous high speed integration and high sensitivity), power
supply and electronics in a compact unit. It measures a wide spectrum range
from 200 nm to 950 nm.
As both wavelength axis and spectral response characteristics are calibrated
at the factory, spectral measurements can be easily and accurately taken. This
device is capable of high speed integration; 10,000 times integration can be
achieved in just 1 second and good signal to noise can be obtained faster than
conventional methods.
It is also easy to combine the PMA-20 with various types of light sources and
external equipment (sample holder, stopped-fl ow cell, refl ection measurements
optics, etc) through optical fi bre.
The software supplied has several different measurement modes such as:
Standard measurements: spectrum display, display of changes over time,
3D display
Refl ective measurements
Transmittance and absorption measurements
Chromaticity measurements (light sources & objects)
Author: Elvis Dzamastagic, Hamamatsu Photonics France
In addition to trigger functions (internal/opening & external
exposure start), this device offers the possibility to monitor
the change of light intensity and to start measurement
automatically, i.e. an optical trigger.
The PMA-20 is suitable for applications in a wide variety of
scientifi c and industrial domains such as single shot measure-
ment of ms pulse emission, phosphorescence, discharge and
plasma, observation of structural change of proteins or
chemical reaction and movement of liquid crystal molecules
in the range of milliseconds.
Features
Single shot spectrum measurement with 100 µs
temporal resolution
High speed integration
Easy measurements using optical fi bre
Factory calibrated spectral response
and wavelength axis characteristics
Applications
Time resolved spectrum measurement for emission
Protein interaction analysis with absorption spectrum
Chemical reaction tracking with a stopped-fl ow method
Photo physics and laser spectroscopy with
submilisecond temporal resolution
Specifi cations
Parameter Description/Value
Photo-detector BT-CCD linear image sensor
Wavelength 200 nm to 950 nm
Wavelength resolution (FWHM) 3 nm
Exposure time 100 µs to 1 s
Number of photosensitive device channels 2048 ch
Pixel size 12 µm x 972 µm
Read-out noise 100 electrons
Dark current 100 electrona/scan (100 µs) at 25 deg.C.
AD resolution 12 bit
Spectrograph Czerny-turner type
Spectrograph F number 4
Fibre Quartz fi bre 1.5 m
Interface Camera Link, USB
Power supply AC100 V to AC240 V, 50 Hz/60 Hz
PMA-20New Version of the Photonic Multichannel Analyser (PMA)
NEW
SYSTEMS PRODUCTS
News 2009 Vol. 1 67
Data analysis unit
Basic software
Camera LinkSIGNAL INPUT
Xenon light source
Sample holder
Photonic Multichannel AnalyzerPMA-20
Absorption measurement systems Absorption spectrum measurement of BTB solution (pH indicator)
Data analysis unit
Basic software
Camera LinkSIGNAL INPUT
Xenon light source
Stopped-flowcell
Photonic Multichannel AnalyzerPMA-20
Stopped-fl ow method measurement systems Change in absorption
Spectrum change measurement with stopped-fl ow method
*Data is provided by courtesy of Department of Biophysics Division of biological Sciences Graduate School of Science Kyoto University.
Phosphorescence measurement systems Phosphorescence measurement
Phosphorescence measurement
The PMA-20 measures the attenuation process of phosphorescence materials excited by YAG laser in single shot. It also measures by single shot to excite the materials with YAG laser (266 nm, 3 mJ).
Absorption spectrum measurement of BTB solution (pH indicator)
The PMA-20 measures the spectrum change of the weak acid BTB solutions from yellow to blue by adding sodium bicarbonate with 100 µs temporal resolution.
The PMA-20 measures the reproduction process of rhodopsin as opsin and retinal are mixed with the stopped-fl ow method.
Data analysis unit
Base software
Camera LinkSIGNAL INPUT
Sample holder
Excitation laser
Photonic Multichannel AnalyzerPMA-20
SYSTEMS PRODUCTS
News 2009 Vol. 168
ORCA camera line-up
Optimum solutions for life science and OEM-type applications
The renowned Hamamatsu Photonics ORCA Digital CCD camera line-up has
been revised with the addition of the ORCA-R2, ORCA-03G and ORCA-05G
cameras. The ORCA-03G and ORCA-05G were previously known as the
C8484-03G01 and C8484-05G01. This change is intended to simplify and
harmonise our most successful cameras within the ORCA range – a name
synonymous with the Hamamatsu commitment to quality, reliability and
innovation.
Like all the other cameras in the ORCA range, these three cameras offer
excellent performance for demanding customer applications. The ORCA-R2,
ORCA-03G and ORCA-05G all share the same exclusive Hamamatsu ER-150
progressive scan interline 1344 x 1024 pixel CCD. This enables them to achieve
70% quantum effi ciency with low noise and high resolution – meaning that
even in low light level conditions, these cameras will deliver impressive results.
ORCA-05G is a cost-effective solution where customers require great
performance without compromising on quality. The compact head is small
enough to fi t in any setup and requires no additional controller.
ORCA-03G comes in the same compact head as the ORCA-05G, but includes
peltier cooling, for more demanding imaging applications that require
extended exposure times.
ORCA-R2 provides un-surpassed image quality, maximum versatility and can
be operated using either air or water-cooling.
The ORCA cameras are fully supported by a Software Development Kit –
making it straightforward for OEM-type integration into third-party equipment.
The Hamamatsu DCAM-API enables seamless control of Hamamatsu cameras
within the OEM customer’s own software. Future-proof expandability is
therefore guaranteed without the need for the customer to re-build the host
application.
Features
High resolution
Excellent dynamic range
Firewire 1EEE 1394 interface
Progressive scan interline CCD – no mechanical shutter
Author: Jim Owens, Hamamatsu Photonics UK
Applications
Fluorescence microscopy
DNA chip reader
High throughput screening
X-ray scintillator readout
Semiconductor inspection
Specifi cations
Exclusive 1.37 million pixel ER-150 CCD
Exposure times from 10µsecs to over 1 hour
Minimum 12-bit A/D converter
Sub-array readout
News 2009 Vol. 1 69
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Fax
23.09. - 25.09.09
Elkom 09 (Helsinki / Finnland)
http://www.fi nnexpo.fi /default.asp?code_
language=en
27.09. - 30.09.09
35th European Congress of Cytology
(Lisbon / Portugal)
http://www.cytologylisboa2009.com/
28.09. - 30.09.09
Biomedical Science Congress (Birmingham / UK)
www.ibms.org
October 2009
06.10. - 08.10.09
OPTO (Paris / France)
http://www.mesurexpo.com/ExposiumCms/do/admin/
visu?reqCode=accueil
06.10. - 08.10.09
Biotechnica (Hannover / Germany)
www.biotechnica.de
09.10. - 12.10.09
50th Annual Meeting of the European Society
for Paediatric Research (Hamburg / Germany)
13.10. - 15.10.09
Miptec (Basel / Switzerland)
15.10. - 16.10.09
Photonex (Coventry / UK)
www.photonex.org
17.10. - 21.10.09
23rd EACTS Annual Meeting (Vienna / Austria)
27.10. - 29.10.09
pea (Lillestrom / Norway)
http://www.pea-messen.no/
November 2009
03.11. - 05.11.09
Vision (Stuttgart / Germany)
www.vision-messe.de
10.11. - 13.11.09
Productronica (Munich / Germany)
www.global-electronics.net
14.06. - 17.06.09
20th ESPNIC Medical & Nursing Annual Congress
2009 (Verona / Italy)
www.kenes.com/espnic
15.06. - 18.06.09
Laser 2009 (Munich / Germany)
www.laser.de
August 2009
26.08. - 29.08.09
Northern Optics (Vilnius / Lithuania )
http://www.no2009.ff.vu.lt/
30.08. - 04.09.09
Microscopy Conference 2009 (Graz / Austria)
www.microscopy09.TUGraz.at
September 2009
01.09. - 04.09.09
Ineltec / go 2009 (Basel / Switzerland)
04.09. - 09.09.09
22nd EU Congress of Pathology (Firenze / Italy)
www.ecp2009.org
06.09. - 09.09.09
Methods and Applications of Fluorescence Spectro-
scopy, Imaging and Probes (Budapest / Hungary)
www.maf11.hu
21.09. - 24.09.09
24th European Photovoltaic Solar Energy Conference
and Exhibition (Hamburg / Germany)
www.photovoltaic-conference.com
May 2009
06.05. - 09.05.09
24. Deutscher Kongress für Perinatale Medizin & 35.
Jahrestagung der Gesellschaft für Neonatologie und
Pädiatrische Intensivmedizin (Berlin / Germany)
14.05. - 16.05.09
Pathology Spring Meeting (Malmoe / Sweden)
21.05. - 23.05.09
Bunsentagung (Cologne / Germany)
24.05. - 30.05.09
11th Pisa Meeting on Advanced Detectors
( Isola D'Elba / Italy)
http://www.pi.infn.it/pm/2009/
26.05. - 28.05.09
Sensor und Test (Nuremberg / Germany)
www.sensor-test.com
June 2009
04.06. - 07.06.09
93. Jahrestagung der dt. Gesellschaft für Pathologie
(Freiburg / Germany)
26.05.- 28.05.09 Sensor + Test 2009 (Nuremberg / DE)
Laser 2009
15.06. - 18.06.09
Munich / Germany
Exhibitions 2009
News 2009 Vol. 170
News 2009 Vol. 1 71
Hamamatsu Photonics Europe
Germany:
Hamamatsu Photonics Deutschland GmbH
Arzbergerstr. 10, D-82211 Herrsching
Phone: +49 (0) 8152 375-0
Fax: +49 (0) 8152 2658
E-mail: [email protected]
www.hamamatsu.de
North-West: (for system products)
Phone: +49 (0) 2831 94506
Fax: +49 (0) 2831 94507
E-mail: [email protected]
Denmark:
Please contact
Hamamatsu Photonics Germany
Netherlands:
Postbus 50.075, NL-1322 AC Almere
Phone: +31 (0) 36 5382123
Fax: +31 (0) 36 5382124
E-mail: [email protected]
Poland:
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ul. sw. A. Boboli 8, PL-02525 Warsaw
Phone: +48 (0) 22 6460016
Fax: +48 (0) 22 6460018
E-mail: [email protected]
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Parc du Moulin de Massy
F-91882 Massy Cedex
Phone: +33 (0) 1 69 53 71 00
Fax: +33 (0) 1 69 53 71 10
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Phone: +41 (0) 32 625 60 60
Fax: +41 (0) 32 625 60 61
E-mail: [email protected]
www.hamamatsu.ch
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E-mail: [email protected]
www.hamamatsu.es
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B-1348 Louvain-la Neuve
Phone: +32 (0) 10 45 63 34
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E-mail: [email protected]
Italy:
Hamamatsu Photonics Italia S.r.l.
Strada della Moia, 1/E, I-20020 Arese
(Milano)
Phone: +39-02 9358 1733
Fax: +39-02 9358 1741
E-mail: [email protected]
www.hamamatsu.it
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Phone: +39-06 5051 3454
Fax: +39-06 5051 3460
E-mail: [email protected]
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2 Howard Court, 10 Tewin Road, Welwyn Garden City
Hertfordshire AL7 1BW . England
Phone: +44 (0) 1707 294888
Fax: +44 (0) 1707 325777
E-mail: [email protected]
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Johannesburg
Republic of South Africa
Phone / Fax: +27 (0) 11 802 5505
Cellphone: +27 (0) 83 298 9266
E-mail: [email protected]
Northern Europe:
Hamamatsu Photonics Norden AB
Smidesvägen 12, SE-17141 Solna . Sweden
Phone: +46 (0) 8 50 90 31 00
Fax: +46 (0) 8 50 90 31 01
E-mail: [email protected]
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Phone: +7-(495)-258-85-18
Fax: +7-(495)-258-85-19
E-mail: [email protected]
Impressum
Hamamatsu Photonics News
Publisher and copyright:
Hamamatsu Photonics
Deutschland GmbH
Arzbergerstr. 10, D-82211 Herrsching
am Ammersee, Germany
Telephone: (49)8152-375-0
Fax: (49)8152-2658
Sitz der Gesellschaft: Herrsching
Amtsgericht München HRB 79474
Geschäftsführer: Dr. Peter Eggl
USt/VAT-Id.: DE128228814
http://www.hamamatsu.de
Editor and responsible for content:
Dr. Peter Eggl
Publishing frequency:
Bi-annual, Date of this issue
May 2009
Graphic and realisation:
SINNIQ Technologiewerbung Ltd.
www.sinniq.com
Printing:
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