EMX at TSMCIn the advanced TSMC processes, the physical properties of the wires (width, thickness and resistance) vary depending on the surrounding wiring. These variations can be significant where fabricated widths may vary by 50%from the nominal (drawn) width, and sheet resistance can change by a factor of two. These variations are called pattern-dependent effects. TSMC provides detailed information about pattern dependencies in their iRCX technology files. Integrand Software's EMX® electromagnetic simulator has been modified to handle the width- and spacing-dependent properties described in the TSMC iRCX technology files. EMX automatically modifies the drawn layout to mimic the fabrication process. The approach has been validated by comparing to measurements and showing that this can significantly improve simulation accuracy for inductors and MOM capacitors.

TSMC iRCX technology files provide:• Metal dielectric properties• Width and spacing dependence• Sheet resistance variation• Metal Bias• Corner case and variation statistics

EMX simulates fabrication effects• Layout is modified according to iRCX• Mimics the fabrication• Voronoi techniques used• Incorporates metal bias• Incorporates sheet resistance variation

iRCX parser:• Integrand provides parser to TSMC customers• Converts iRCX to EMX .proc format• Includes temperature dependence• Includes corner cases for metals and vias• Integrated with Cadence Virtuoso GUI

Drawn vs Fabricated:• Drawn layout is different • Fabricated width can be 50% from

nominal (drawn) width• Sheet resistance can vary by a factor of two• These effects are critical for narrow routing

MOM capacitors and stacked inductors

Drawn (shaded) vs Fabricated (Line)

Sheet resistance variation

MoM simulation vs Measurement

TSMC uses EMX:• Scalable models for design kits• PDK inductors, MOM capacitors• Characterization of new devices• Extensive silicon verification

EMX

In the advanced foundry processes (e.g., TSMC 40nm node) the physical properties of the wires (width,

thickness and resistance) vary depending on the surrounding wiring. These variations can be significant

where fabricated widths may vary by 50%from the nominal (drawn) width, and sheet resistance can

change by a factor of two. These variations are called pattern-dependent effects. TSMC provides

detailed information about pattern dependencies in their iRCX technology files. Integrand Software's

EMX

®

electromagnetic simulator has been modified to handle the width- and spacing-dependent

properties described in the TSMC iRCX technology files. EMX automatically modifies the drawn

layout to mimic the fabrication process. The approach has been validated against measurements and

showing this significantly improves simulation accuracy for inductors and MOM capacitors.

EMX models fabrication effects

• Supports TSMC iRCX format

• Layout is modified according to iRCX

• Mimics the fabrication

• Incorporates metal bias

• Incorporates sheet resistance variation

Drawn vs Fabricated

Resistance variation

MoM capacitor modeling

Advanced foundry support

Diplexer in SIP process

VCO in TSMC 90nm RFCMOS

EMX Spice Modeling

• EMX creates RLCK spice models

• Passive by construction

• Models now used by major foundries

• inductors, capacitors, transformers, etc.

Foundry support (TSMC)

• TSMC EM partner

• Design kit models built using EMX

• Qualification reports for 180nm-28nm online

• Qualified for iRCX

• Interface to TSMC PDK and 65nm RF RDK

Foundry support (UMC)

• UMC EM partner

• Design kit models built using EMX

• Qualification reports for 180nm-65nm online

• Synthesis kits for OIF, OCF from Integrand

Foundry support (IBM)

• Some scalable models built using EMX

• Verified for 5PAE, 7WL, 9RF, 10LPE, 12SOI

• EMX process file support

Foundry support (Global Foundries)

• Some scalable models built using EMX

• Verified for 130nm, 180nm, 65nm and 40nm

• EMX process file support

Integrand Software, Inc. • 230 Sherman Ave., Suite 11 • Berkeley Heights, NJ 07922

(908) 517-0748 • info@integrandsoftware.com • www.integrandsoftware.com

EMX at TSMC RDK 2.0Integrand's Electromagnetic (EM) simulator EMX has been validated for TSMC's RF Reference Design Kit (RF RDK) 2.0. The flow works within the Cadence Virtuoso(R) environment and includes a complete validated tutorial demonstrating an EM reference design flow for a Voltage Controlled Oscillator (VCO) designed in TSMC's 65-nanometer RF CMOS process. EMX can be used from within the TSMC PDK for simulation and modeling of sensitive or custom circuitry -- where high accuracy is critical -- and then combine the resulting models with parasitic extraction of less-critical nets using a layout parasitic extractor for final post-layout simulation flow. EMX is used by TSMC for generating all the scalable models for inductors in the TSMC PDK. EMX handles the width- and spacing-dependent properties described in the TSMC iRCX technology files and automatically modifies the drawn layout to mimic the fabrication process. Excellent correlation with silicon measurements has been observed.

EMX simulates fabrication effects• Layout is modified according to iRCX• Mimics the fabrication• Incorporates metal bias• Incorporates sheet resistance variation• Excellent correlation with measurements

Simulates fabrication effects with iRCX

TSMC uses EMX:• Scalable models for design kits• PDK inductors, MOM capacitors• Characterization of new devices• Extensive silicon verification

TSMC RF RDK 2.0• Fully integrated in TSMC PDK• S-parameter and subckt generation • Custom inductor and device flow• Physical verification flow• Post-layout simulation flow• Reference design includes 65nm VCO• Excellent agreement with reference EMX design flow in TSMC RF RDK 2.0

VCO reference design from TSMC RF RDK 2.0

Integrand Software, Inc. • 230 Sherman Ave., Suite 11 • Berkeley Heights, NJ 07922(908) 517-0748 • info@integrandsoftware.com • www.integrandsoftware.com