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SOD-523
GSRB751S-40 Schottky Barrier Diode
Features
1/3
Small surface mounting type Low reverse current and low forward voltage High reliability
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■
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Schematic Diagram
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Parameter Symbol Limit Unit
Peak Reverse Voltage VRM 40 V
DC Reverse Voltage VR 30 V
Mean Rectifying Current IO 30 mA
Non-Repetitive Peak Forward Surge Current@t=8.3ms IFSM 200 mA
Junction Temperature TJ 125 °C
Storage Temperature TSTG -55 to +150 °C
Power Dissipation PD 150 mW
Thermal Resistance Junction to Ambient RθJA 667 °C/W
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter Symbol Min Typ Max Unit
Forward Voltage VF 0.37 V
Reverse Current IR 0.5 μA
Capacitance between Terminals CT 2 pF
Conditions
IF=1mA
VR=30V
VR=1V,f=1MHZ
-
-
-
-
-
-
0 5 10 15 201
2
3
4
5
6
7
8
910
0 25 50 75 100 1250
50
100
150
200
0.0 0.2 0.4 0.6 0.8 1.00.01
0.1
1
10
100
0 5 10 15 20 25 30 351E-3
0.01
0.1
1
10
Ta=25℃f=1MHz
Capacitance Characteristics
REVERSE VOLTAGE VR (V)
CAP
ACIT
ANC
E BE
TWEE
N T
ERM
INAL
SC
T (p
F)
Power Derating Curve
POW
ER D
ISSI
PATI
ON
P
D
(mW
)
AMBIENT TEMPERATURE Ta ( )℃
Forward Characteristics
T a=1
00 o C
T a=2
5 o C
FOR
WA
RD
CU
RR
EN
T
I F (m
A)
FORWARD VOLTAGE VF (V)
Reverse Characteristics
Ta=100 oC
Ta=25 oC
REV
ERSE
CU
RR
ENT
IR
(uA)
REVERSE VOLTAGE VR (V)
GSRB751S-40 Schottky Barrier Diode
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Typical Characteristic Curves �
��� ��� ��� ���A 0.510 0.770 0.020 0.031
A1 0.500 0.700 0.020 0.028b 0.250 0.350 0.010 0.014c 0.080 0.150 0.003 0.006D 0.750 0.850 0.030 0.033E 1.100 1.300 0.043 0.051
E1 1.500 1.700 0.059 0.067E2L 0.010 0.070 0.001 0.003� 7° REF
���� ���������������������� ������������������
7° REF
0.200 REF 0.008 REF
Package Outline Dimensions SOD-523
GSRB751S-40 Schottky Barrier Diode
Suggested Pad Layout
Order Information
3/3www.goodarksemi.com Doc.GSRB751S-40xST3.1 Dec.2020
GSRB751S-40 SOD-523Device Package Marking Carrier Quantity HSF Status
5 Tape & Reel 8000pcs / Reel RoHS compliant