Gencoa 3G Circular Magnetrons

Gencoa3G Circular Magnetrons

Presenting Gencoa’s 3rd

generation range of circular magnetrons

November 2017 www.gencoa.com 1

November 2017 2www.gencoa.com

• Product Overview

• Introduction

• 3G Design Features

• 3G Mechanical Options

• High Yield Magnetics from 4” target

• High Strength Magnetics

• Low pressure operation

• Deposition Rate

• Performance curves

• Conclusion

Copper target, DC 300W, 8.5 E-3 Torr

Copper target, RF 300W, 8.5 E-3 Torr

Contents


3G

Product Overview Product Overview

Gencoa 3G Circular Magnetrons – 3rd

generation of circular magnetron design

Gencoa’s small sized circular magnetrons for R&D have evolved in 3 stages to the current third generation with

more performance in a smaller space


1996 2010 2017


• Launched in 2017

• Works in wide range of pressure – into 10-6 Torr range

• Compact Size

• Unique non-bellow tilted magnetron head

• High Yield magnetics for the 4” target size

• Magnetic material sputtering

• Gas Injection as standard

• PEEK insulation to reduce outgassing

• Accommodates different target thickness

• DC, DC pulse, RF and HIPIMS ready


3G cathode features


Available in 5 different assembly options

• SW (3G)- Full option with 45⁰ tilt, RF /HIPIMS ready and gas injection

• SW (3GA)- The cathodes can be supplied with a simple straight & no gas injection.

• SW (3GB)- The basic design with only gas injection as option

• SW (3GC)- This model comes with tilt and gas injection but no power connection box.

• SW (3GE)- Externally mounted magnetron with gas injection and RF/HIPIMS ready

SW

100

(3G

)

SW100(3GE)

3G cathode variations

SW

50

(3G

C)

SW

50

(3G

B)


• Small head size – approx. 1” larger than target size

• Tilt height most compact in industry - tilt pivot point is 1” from cathode rear allowing higher tilt angles

• 3G means smaller chambers can be used whilst having the same tilt and head positions

C

A

B24.4

Target A B C

2” 92.3 83.8 76.2

3” 97.7 85.7 101.6

4” 114 101.5 128.1

3G small head size and tilt means smaller chambers

3G has innovative head angle adjustment

• ±45° tilt without bellows

• Angle can be viewed and adjusted from the front of the cathode

• The 2 position clamp pressure is released by means of a supplied tool or by hand, the head is rotated to the desired angle, then the clamp is re-fixed to the first ‘notch’ tight position

• To measure the angle, there is a milled slot on the clamp that is aligned with the protractor angle allowing the tilt angle to be fixed accurately to 5°.

• The protractor is removable.


Knurled Single Ring allows easy tilting

Protractor Tilt tightening Tool

Self Adjusting Target Clamps


• Target clamp adjust to the target thickness. anti-sticking materials used for the threaded fixing

• Can use a thermal conduction gasket between target and cooled diaphragm

• High water flow (2l/min) and diaphragm cooling for high power capacity

• Directly cooled targets available – factory configured

Threaded Target Clamp

PEEK Insulator (reduces Outgassing)

4” HY target with graphite gasket and diaphragm

Eroded Target

Thermal Conduction Sheet (Graphite)

Diaphragm

Target Removal Tool


Various mechanical options available

• Design allows to fit manual and pneumatic shutter

• Anode cooling to provide extra source cooling for HOT chamber environments

• Gas injection

• Sputter Chimney

• Quick coupling feedthrough

• ISO or CF flange mounting option

Shutter (Optional)

Power Connector (N type /7-16”/HN)

Anode Cooling(Optional) Wall Mount

Feedthrough (Optional)

Shutter Adjustment Manual/Pneumatic (Shown)(Optional)

Gas Injection

3G Extra Options

New shutter design with longer flexible shaft

3G Mechanical Option Matrix

Model Gas Injection

Tilt RF/ HIPIMS

Shutter Chimney Wall Mount Feedthrough

Water Cooled Anode

Hidden Anode

3G • • • • • • • •3G(A) • • • • • • • •3G(B) • • • • • • • •3G(C) • • • • • • • •3G(E) • • • • • • • •


• Standard Feature

• Optional

• Not Applicable

Mechanical Options Examples


4” 3G with Shutter) 3G100 ExternalAnode Cooling

3G 45⁰ Tilted

3G No shaft (customer weld )

Sputter Chimney

3G100 High Yield type magnetics for high target use


• The 3G100 is available with a high yield HY type array

• >40% target utilization

• Gencoa solution for precious material sputtering

Ta

rget

pro

file

,m

m

-60 -40 -20 0 20 40 60

3G100-HY 10mm thick target erosion

Radial Position, mm

9

6

3 Ta

rget

pro

file

,m

m

Magnetic Material Sputtering (High Strength Array)


• The cathodes allow magnetic material sputtering as standard with diaphragm cooled target.

• Thicker target can be sputtered using directly cooled target. (Pre- configured at factory)

• Anode height adjustable to accommodate different target thickness.

Size

Magnetic Strength on the target

surface (G)

Fe Thickness

(mm)

Ni Thickness

(mm)

50mm (2”)

780 1 3

75mm (3”)

840 1.5 4

100mm (4”)

620 0.5 2

Anode height line


• Extensive testing performed on 3G prototypes for product reliability and plasma stability

• Achieved 2l/min water flow through the cathode at 1.5 bar pressure difference

• Works in wide range of pressure

• Coating uniformity & deposition rate measured for different target diameters

• Performance curves obtained at various pressure levels for various power modes

Copper target, DC 300W, 8.5 E-3 Torr


3G cathode testing

80

120

160

200

240

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

v

olt

ag

e, V

Pressure, Torr

3G50-Cu Target

RF 300W

RF 180W

300

350

400

450

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

vo

lta

ge,

V

Pressure, Torr

3G50-Cu target

DC 300W

DC 180W

10-6 to 10-2 Operating Pressure Range – example of 3G50 (2”)



300

350

400

450

500

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

v

olt

ag

e, V

Pressure, Torr

3G75 -Al target

DC 600W

DC 300W

300

350

400

450

500

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

vo

lta

ge,

V

Pressure, Torr

3G75-Cu target

DC 600W

DC 300W



300

350

400

450

500

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

vo

lta

ge,

V

Pressure, Torr

3G100 - Cu target

DC 600W

DC 300W

300

350

400

450

500

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

vo

lta

ge,

V

Pressure, Torr

3G100 HS - Cu target

DC 600W

DC 300W


300

350

400

450

500

550

600

650

1.00E-05 1.00E-04 1.00E-03 1.00E-02

Ta

rget

vo

lta

ge,

V

Pressure, Torr

SW100HY-Cu Target

DC 600W

DC 300W

3G100HY operating parameter example


0

1

2

3

4

5

200

300

400

500

600

700

0 400 800 1200 1600

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

5.0E-4 Torr, DC powerAl target

Voltage

Current

Coating Uniformity 3G50


0.2

0.3

0.4

0.5

-50 -40 -30 -20 -10 0 10 20 30 40 50

OD

Position, mm

DC Power 150mm T/S, Copper target

Range (mm) Uniformity

50 2.0%

30 0.9%

20 0.4%

Coating Uniformity 3G50


0

0.2

0.4

0.6

0.8

1

1.2

-50 -40 -30 -20 -10 0 10 20 30 40 50

OD

Position (mm)

Normalised Uniformity over 100mm

50mm T/S

150mm T/S

100mm T/S

Coating uniformity 3G75DC & RF comparison


Range, mmDC

Uniformity

50 ±4.4%

60 ±6.5%

70 ±8.4%

Range, mmRF

Uniformity

50 ±3.5%

60 ±5.7%

70 ±7.9%

Al target, DC 300W, 2.5 E-3 Torr

Al target, RF 300W, 2.5 E-3 Torr

0

0.2

0.4

0.6

0.8

1

1.2

-30 -20 -10 0 10 20 30

3" Al target @100mm T-S

RF

DC

Coating Uniformity 3G100DC & RF Comparison


Range, mmDC

Uniformity

50 ±5.1%

60 ±7.2%

70 ±9.1%

Range, mmRF

Uniformity

50 ±5.2%

60 ±6.9%

70 ±9.1%

Cu target, DC 300W, 1.4 e-2Torr

Cu target, RF 300W, 1.4 e-2Torr

0

0.2

0.4

0.6

0.8

1

1.2

-40 -30 -20 -10 0 10 20 30 40

4" Cu Target @150mm T-S

DC

RF

Power Vs Voltage Vs Current (3G50 Cu target, DC power)


0

0.2

0.4

0.6

0.8

1

250

300

350

400

450

0 60 120 180 240 300

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

5E-4 Torr

0

0.2

0.4

0.6

0.8

1

250

300

350

400

450

0 60 120 180 240 300

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

2.5E-3 Torr

0

0.2

0.4

0.6

0.8

1

250

300

350

400

450

0 60 120 180 240 300

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

1.4E-2 Torr

Voltage

Current

Voltage

Current

Voltage

Current

Power Vs Voltage (3G50 RF Power)


50

90

130

170

50 100 150 200 250 300

DC

vo

lta

ge

, V

Forward power, W

Cu target

5.0E-4 Torr

2.5E-3 Torr

1.4E-2 Torr

250

300

350

400

450

500

550

600

50 100 150 200

DC

vo

lta

ge,

V

Forward power, W

RF power, 2.5E-3 Torr, fused silica target

Power Vs Voltage Vs Current (3G75 Al target, DC power)


0

0.4

0.8

1.2

1.6

2

220

270

320

370

420

470

0 120 240 360 480 600

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

5.0E-4 T orr,

0

0.4

0.8

1.2

1.6

2

220

270

320

370

420

470

0 120 240 360 480 600

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

2.5E-3 T orr,

Voltage

Current

Voltage

Current

0

0.4

0.8

1.2

1.6

2

220

270

320

370

420

470

0 120 240 360 480 600

Cu

rren

t, A

Vo

lta

ge,

V

Power, W

8.5E-3 Torr

Voltage

Current0

0.4

0.8

1.2

1.6

2

220

270

320

370

420

470

0 120 240 360 480 600

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

1.4E-2 Torr

Voltage

Current

Power Vs Voltage (3G75, RF power)


120

160

200

240

280

50 100 150 200 250 300

DC

vo

lta

ge,

V

Forward power, W

RF power, Al target

5.0E-4 Torr

2.5E-3 Torr

8.5E-3 Torr

1.4E-2 Torr

Power Vs Voltage Vs Current (3G100 Cu target, DC power)


0

0.5

1

1.5

2

2.5

3

250

300

350

400

450

500

550

0 200 400 600 800 1000 1200

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

1.4E-2 Torr

Voltage

Current

0

0.5

1

1.5

2

2.5

3

250

300

350

400

450

500

550

0 200 400 600 800 1000 1200

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

8.5E-3 Torr

Voltage

Current

0

0.5

1

1.5

2

2.5

3

250

300

350

400

450

500

550

0 200 400 600 800 1000 1200

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

2.5E-3 Torr

Voltage

Current

0

0.5

1

1.5

2

2.5

3

250

300

350

400

450

500

550

0 200 400 600 800 1000 1200

Cu

rr

en

t, A

Vo

lta

ge

, V

Power, W

5.0E-4 Torr

Voltage

Current

Power Vs Voltage (3G100, RF power)


0

50

100

150

200

250

50 100 150 200 250 300

DC

vo

lta

ge,

V

Forward power, W

RF power, Cu target

5.0E-4 Torr 2.5E-3 Torr

8.5E-3 Torr 1.4E-2 Torr

Gencoa 3G – No.1 choice for R&D Thin Film Technology


Gencoa 3G Advantages Competition

Lower Pressure Operation. 3G magnetrons can work down to e-6 Torr range

Most small size magnetrons work e-4 Torr range only

Small head size allows for smaller chambers or more sources within the same space

Larger heads require larger chambers

Magnetron head can be tilted 45 ⁰ with ease. No welded bellows and compact tilt height allows sources closer together in a cluster. The angle can be fixed accurately to 1 °.

Magnetrons are tilted using welded bellows which requires more chamber space and less accurate.

High Yield magnetics for 4” offering >40 % target use and recommended for precious metal sputtering

Not Available

Gas injection standard for all magnetrons Extra cost

DC, RF & HIPIMS compatible as standard Ordered as an option

Gencoa developed uniformity software to generate a coating uniformity direct from the magnetic field model and taking into account all system parameters

Not available

3G Cu Example Deposition Rates (100mm T-S)


TargetSize

Target Thickness (mm)

Power Mode

Power (W)

Deposition Rate (nm/min)

2” 3 DC 300 134

2” 3 RF 300 94.5

3” 6 DC 300 133

3” 6 RF 300 80

4” 6 DC 300 116

4” 6 RF 300 70

Gencoa cluster solution to R&D Market


IMC75• A powerful new tool for

thin film research.• Fits into the space of a

typical magnetron and has head tilt adjustment.

• Multiple uses - ion assistance, patterning, pre-cleaning, coating stripping, PECVD

• DC power technology for low cost of ownership.

• Dedicated Power supply with Gas regulation via automatic feedback control

FFE75• Dynamic plasma

movement for full face erosion

• Clean target for defect free layers

• High target use for precious metals

• Better Uniformity• Ideal for high cost

and compound targets.

• RF, HIPIMS and DC Option

• Tilt, shutter, Gas injection available

3G75• State of the

art design • Wide rang of

operating pressure

• Compact in size

• Various mechanical options possible.

• RF, HIPIMS and DC Option

Further information gencoa.com/3g-circular

You might also be interested in our small circular ffemagnetron range and IMC75 circular ion source


IMC75 R&D Power in one source – substrate pre-cleaning, etch and patterning, ion assistance, oxidation, Plasma ALD, Plasma CVD, ion beam sputtering, cluster encapsulation

ffe75

ffe75

ffe75

ffe100

http://www.gencoa.com/3g-circular

Further information

For further information on the Gencoa range of 3G circular magnetrons, visit www.gencoa.com/3g-circular or email [email protected] to contact member of the sales team.


http://www.gencoa.com/3g-circular

mailto:[email protected]

Documents

Gencoa 3G Circular Magnetrons