GaN & SiC Technology Overview - richardsonrfpd.com · Half bridge eval board using GaN Systems GS61008P 100V, ... 8kW High freq ZVS, LLC resonant Full bridge ... Totem Pole PFC ref

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GaN & SiC Technology Overview

www.richardsonrfpd.comJUNE 2018


Your Source for GaN and SiC ProductsSilicon Carbide (SiC)Silicon carbide (SiC) offers significant advantages in high-power, high-voltage applications where power density, higher performance and reliability are of the utmost importance. Solar inverters, welding, plasma cutters, fast vehicle chargers and oil exploration are a few examples of industrial applications that benefit from the higher breakdown field strength and improved thermal conductivity that SiC offers over silicon (Si) material.

SiC MOSFETs produce much lower switching losses compared to Si IGBTs, as shown in the yellow-highlighted areas below:

Si IGBT SiC MOS

Voltage

Turn

Off

Turn

On Eon = 10.0 mJ

Eoff = 11.2 mJ

Eon = 3.3 mJ

Eoff = 3.2 mJ

SiC Schottky diodes have near-zero reverse recovery losses compared to Si FREDs and are stable over temperature:

Current

Voltage

Current

Current

Current

Voltage

Voltage

SiC MOSFETs have a much more stable RDS(on) over temperature than Si MOSFETs.

SiC MOSFETs include a robust body diode with much lower reverse recovery charge (Qrr) and reverse recovery time (Trr) than Si MOSFETs.

Advantages of designing in SiC include: • SiC diodes have near-zero reverse recovery current • Improved efficiencies and decreased thermal dissipation • Smaller power electronics and system size • Higher power density • Higher operating frequency • Simple parallel operation • Reduced overall system cost


$450.00

$400.00

$350.00

$300.00

$250.00

$200.00

$150.00

$100.00

$50.00

$0China Brazil UK Japan Spain Germany DenmarkUSA

2919 14 11 9 8 7 6

Savings/YR Pay Back Period (Months)• $200 cost differential between Si and SiC Module.• Motor operated for 16 Hrs daily every day.• Assuming 0.8% improvement in operational efficiency for the SiC motor drive.

Design in SiC products to substantially reduce switching and conduction losses, resulting in lower heat sink cost:

Lower losses lead to higher efficiencies and lower energy consumption, resulting in lifelong savings:

Use SiC products to restructure, not increase overall system cost.

Need to transfer 10kW

IGBT + Si Diode

SiC MOSFET + SiC Diode

SiC MOSFET + SiC Diode

Switching Frequency 20kHz 60kHz 100kHzInductors $62 $35 $20Capacitors $65 $65 $65Cooling $45 $30 $38Power Semiconductors $10 $40 $40Total $182 $170 $163

Use SiC Performance Advantages to Reduce Total Cost

Comparison based on:• 10kW interleaved boost converter• Output Power: 10kW

Design Options using SiC to reduce $ per WattOption 1

Higher Power50 HP instead of 30 HP

Option 2Smaller Cooling

at same 30 HP

Option 3 Smaller Cooling + Higher Frequency

at same 30 HP

FSW = 8 kHzRØ HS = 0.16 °C/WPLOSS Total = 369 W

n = 99.0%TJ = 127 °C

FSW = 8 kHzRØ HS = 0.55 °C/W (1/3 size)

PLOSS Total = 153 Wn = 99.3%

TJ = 135 °C

FSW = 35 kHz (>4×) RØ HS = 0.4 °C/W (2/3 size)

PLOSS Total = 204 W n = 99.1%

TJ = 136 °C

SiDrive

SiCDrive

SiDrive

Si Heat Sink

SiC HS

30 HP

50 HPSiCDrive

• Input Voltage Range: 300VDC - 450VDC• Output/DC-Link Voltage: 640VDC


Gallium Nitride (GaN)

Gallium Nitride, a wide band gap semiconductor, is rapidly displacing Silicon as the material of choice for power transistors. With their superior material properties and simplicity of use, Gan Systems’ GaN E-HEMTs* allow designers to set new standards for efficiency, power density, size and weight.

GaN E-HEMTs are easy to use• Voltage driven, like MOSFETs• True enhancement-mode, normally off• Easily driven by Si or GaN-specific gate driver• Conventional slew rate control using RG• Simple paralleling

GaN E-HEMT’s Key Properties - Benefits• ZERO reverse recovery – Low power loss, high efficiency• High switching frequency – Size reduction, high power density• Bi-directional conduction – New high efficiency topologies• Intrinsically stable paralleling – Broad power range

Switching Loss Comparison – Eon/EoffGaN Systems E-HEMT vs. Si IGBT Eon/Eoff measurement (20 ns/div). 400V/15A, 100kHz, Half Bridge

Eoff measurement (20 ns/div)

GaN Systems - GS66508T Eon=52uJ Infineon IGBT - IKW30N60H3 Eon=492uJ

GaN Systems - GS66508T Eoff=12uJ Infineon IGBT - IKW30N60H3 Eoff=96uJ

ZERO Qrr loss yields higher efficiencies

ZERO Qrr period yields higher switching frequencies

Turn-on loss vs Frequency, hard switching

Zero Reverse Recovery

Frequency

QRR + QOSS

IPW65R048CFDA GS66508T

300kHz 22W 0.5W

100kHz 72W 1.5W

200kHz 144W 3.0W

Turn-on loss comparison @ 400V/22A

VDS

ID

QRR dominates. Eon = 6670µJ!

VDS

ID

Very low Qoss loss.Eon = 92µJ

QRR + QOSS loss

Qoss loss only

Silicon

GaN E-HEMTs have 10x lower Eon/Eoff switching losses compared to Silicon IGBTs.

Eon/Eoff switching loss

D

S

G

bodydiode

GATE

SOURCE

DRAIN


12kW Inverter

• 5x smaller

• 3x lighter

• 50% lower power loss

Semi-bridgeless PFC

System Cost Comparison: GaN Systems E-HEMT vs Si MOSFET

Bridgeless Totem Pole PFC

Reduce system cost by 15% and part count by 33% by using GaN over Si.

GaN enables smaller, more efficient, lower cost PFC solutions

• Zero Reverse Recovery• Reverse conduction• Anti-Parallel Diode not required

cost

(%)

TotemPole

Semi-bridgeless

Silicon

Silicon

Significantly Reduce Hardware Size with GaN Systems


GaN-on-Si E-HEMT Discrete

SiC MOSFET Discrete

SiC MOSFET Module

SiC/Si Hybrid Modules

SiC Diode Discrete

SiC Diode Module

Voltage 100V, 650V — — — — —

Current 7.5A - 120A — — — — —

Rds(on) 5mΩ - 200mΩ — — — — —

Packages (mm)

4.5x5, 7x4, 7.5x4.6, 6.6x5, 5.5x4.5, 7x4.4, 8.4x7, 9x7.6, 11x9, 11.8x5.3

— — — — —

Voltage —

700V,

1200V,

1700V

600V,

1200V,

1700V

500V, 600V,

800V, 900V,

1000V, 1200V

700V,

1200V,

1700V

600V,

1200V

Current — — 20A - 586A 11A - 110A 10A - 50A 10A - 60A

Rds(on) —15mΩ - 750mΩ

2.1mΩ - 80mΩ — — —

Packages (mm)

—

TO-247,

SOT-227,

D3PAK

D3 (62x108), SOT-227, SP1 (41x52),

SP3F (43x73), SP6 (62x108), SP6P (62x108), SP6LI

(62x108)

SOT-227, SP1, SP3F, SP4, SP6, SP6P

TO-220,

TO-247,

D3PAK

SP1,

SOT-227

Voltage — — 1200V 1200V, 1700V 600V —

Current — — 75A - 800A 100A - 1200A 20A —

Rds(on) — — — — — —

Packages (mm)

— —

50x120, 48x94,

76x108, 92x122,

130x140, 56x110,

80x110, 67x131,

Super Mini DIP

48x94,

76x108,

80x110,

130x140,

Super Mini DIP

TO-220,

TO-247—

Voltage — — — 1200V, 2400V — —

Current — — 20A - 140A 100A - 150A — —

Rds(on) — — 17mΩ - 80mΩ 8mΩ - 27mΩ — —

Packages (mm)

— —

flow 0 (33 x 66),

flow 1 (37 x 82),

flow 2 (47 x 108)

flow 0 (33 x 66),

flow 1 (37 x 82) — —

Voltage —

900V,

1000V,

1200V,

1700V

1200V,

1700V—

600V,

650V,

1200V,

1700V

—

Current — 5A - 90A 20A - 325A — 1A -50A —

Rds(on) —16mΩ -

1000mΩ3.7mΩ - 80mΩ —

——

Packages (mm)

—

TO-247-3,

TO-247-4,

TO-263-7

45 x 108,

62 x 108,

High Perf (65 x 110)

—

TO-220-2, TO-220-F2 (Full pack), TO-252-2

(DPAK), TO-263-2 (D2PAK),

TO-247-2, TO-247-3,

TO-220 Isolated, QFN

—

GaN and SiC Discrete and Module Offering

Franchised for Mitsubishi in NA only.


GaN-on-Si E-HEMT Evaluation Platform and Reference Design

Part Number: GS61004B-EVBCD Eval board optimized for class D amp applications, uses GaN Systems GS61004B 100V, 15mΩ E-HEMT and pSemi PE29102 high speed gate driver.

Part Number: GS665MB-EVB 650V universal motherboard for GS665XXX-EVBDB daughter boards.

Part Number: GS66508B-EVBDB 1.5kW Half bridge daughter board

Part Number: GS66508T-EVBDB 2kW Half bridge daughter board

Part Number: GS66516T-EVBDB 2.5kW Half bridge daughter board

Part Number: GS61008P-EVBHF Half bridge eval board using GaN Systems GS61008P 100V,

7mΩ E-HEMT and pSemi PE29101 high speed gate driver.

Part Number: GSP65R25HB-EVB 1-3kW half bridge IMS evaluation module featuringgate driver + GS66516B 650V, 25mΩ bottom cooledE-HEMT and Insulated Metal Substrate (IMS) cooling.

Part Number: GSP65R13HB-EVB 4-6kW half bridge IMS evaluation module featuringgate driver + 2x GS66516B 650V, 25mΩ (13mΩ) bottom cooled E-HEMT and Insulated Metal Substrate (IMS) cooling.

Part Number: GS665BTP-REF 3kW High 99% efficiency bridgeless totem pole PFC ref design using GS66516T 650V, 25mΩ top cooled E-HEMT.Vin: 176 - 264Vrms | Vout: 400VDC

Part Number: GSP65MB-EVB Motherboard for IMS evaluation modules (GSP65R13HB-EVB and GSP65R25HB-EVB)

SiC Evaluation Platform and Reference Designs

Part Number: CRD-5FF0912P High-frequency evaluation board for C3M0120090J 900V, 120m Ohm SiC MOSFET. Flexible half bridge configuration to quickly prototype a synchronous buck, boost or inverter.

Part Number: CRD-50DD12N 50kW 4-phase interleaved boost converter for PV applications, using Wolfspeed C2M0080120D 1200V, 80mΩ , C2MTM SiC MOSFET. Vin: 400 – 600VDC • Vout: 800VDC

Part Number: CRD8DD12P 8kW High freq ZVS, LLC resonant Full bridge converter.Vin: 700VDC • Vout: 270VDC

Part Number: KIT8020-CRD-8FF1217P-1 Half bridge eval kit for EMI ringing and drive requirementsusing Wolfspeed 1200V, 80mΩ C2MTM SiC MOSFETs.

Part Number: CRD-060DD17P-2 48W Aux power supply eval board using WolfspeedC2M1000170J 1700V, 1000Ω SiC MOSFET in 7LD2PAK. Achieve economical thermal design without heat sink.Vin: 300 – 1000VDC • Vout : 12VDC/4A, 12VDC/0.1A

Part Number: KIT8020-CRD-5FF0917P-2 Half bridge eval board using Wolfspeed C3MTM

1200V, 75mΩ SiC MOSFET in TO-247-4 package.

Part Number: CRD-20DD09P-2 20kW full bridge resonant LLC converter ref design,using Wolfspeed 1000V, 65mΩ C3MTM SiC MOSFET in TO-247-4 package, enabling smaller, cooler and lower cost off-board EV chargers. Vin: 650 - 750VDC • Vout: 300 - 550VDC • Iout : 35A

Part Number: CRD-060DD12P 60W aux supply using C2M1000170D 1700V, 1Ω SiC MOSFET in TO-247-3 package. Demo board for single-end, HV flyback design. Vin: 200 – 1000VDC Vout : 12VDC/4.5A, 5VDC/0.5A, -12VDC/0.25A

Part Number: CRD-02AD09N 2.2kW high 98.5% efficiency (80+ Titanium) BridgelessTotem Pole PFC ref design using Wolfspeed 900V, 65mΩ C3MTM SiC MOSFET in TO-263-7 package.Vin: 180 - 264Vrms | Vout: 400VDC

Part Number: EV-MS4135PL1Z-U1 Uses Analog Devices ADuM4135 gate driver IC and Microsemi APTMC120AM20CT1AG 1200V, 143A, 17mΩ SiC half bridge module in SP1 package.

High Power Gate Driver Board and SiC Half Bridge Module

Part Number: GSWP100WP-EVBPA100W amp using GaN Systems GS1008P 100V, 90A, 7mΩ E-HEMT

Part Number: GSWP300WP-EVBPA300W amp using GaN Systems GS66508P 650V, 30A, 50mΩ E-HEMT

100W and 300W amps for wireless power transfer/charging applications in. Push-pull class EF2 topology, operating at 6.78MHz, 90% peak efficiency.


Package Styles Dimensions in millimeters (mm)

62x108 (SP6P)

43x73 (SP3F)

62x108 (D3)

62x108 (SP6)

SOT-227 (Isotop)

41x52 (SP1)

SP6LI(62x108)

TO-220-2 TO-247-2D3PAK(TO-268)

TO-247

37x82 (Flow 1)

33x66 (Flow 0)

©2018 Richardson RFPD, Inc. All other product names and logos are trademarks of their respective manufacturers. Rev.4 DOC-007R1

62x108 (D3)

TO-252-2 (DPAK)

TO-263-2 (D2PAK)

45x108 (EconoPACKTM 2)

TO-263-7L (7L D2PAK)

QFN 3.3 TO-220-2 and TO-220 Isolated

TO-247TO-220-F2 (Full Pack)

65x110 (High Performance 65mm)

TO-247-4L

62x108 48x94

50x12067x131

80x110 SuperMini DIP

62x122

130x140

56x110

47x108(Flow 2)

GS61004B(4.6 x 4.4)

GS61008P(7.0 x 4.0)

GS61008T(7.0 x 4.0)

GS66502B(5.0 x 6.6)

GS66504B(5.0 x 6.6)

GS66506T(5.6 x 4.5)

GS66508B(7.0 x 8.4)

GS66508P(10.0 x 8.7)

GS66516T(9.0 x 7.6)

GS-010-120-1-T (7.0 x 4.0)

GS66508T(6.9 x 4.5)

GS-065-120-1-D 1(12.7 x 5.6)

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GaN & SiC Technology Overview - richardsonrfpd.com · Half bridge eval board using GaN Systems GS61008P 100V, ... 8kW High freq ZVS, LLC resonant Full bridge ... Totem Pole PFC ref