GaN ICs Enabling Next-Gen ACF for Adapter/Charger Application

Xiucheng Huang, Ph.DMar 21st 2019

2

USB Type C & Power Delivery

All in one: Type C connector One for all: PD adapter/charger

Mu One 45W Apple 30W

3

Mu One 45W PD: World Thinnest Adapter

• 5V/3A, 9V/3A, 12V/3A, 15V/3A, 20V/2.25A

• 14 mm profile

• CE, UL, etc.

• Available now on www.amazon.comImages courtesy Made-in-Mind

• Available now on www.amazon.com4

RAVPower 45W: Same Platform

Images courtesy RAVPower

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AUKEY 24W, 27W, 30W

27W USB-C PD2 x 12W USB-A

30W USB-C PD

Images courtesy AUKEY

27W USB-C PD

• Available now on www.amazon.com

6

How Can We Make It?

A. Select the right semiconductor devices

B. Select the right topology, frequency and control

C. Select the right magnetics and design properly

S1

Lm

Lr

S2

Cr

VinVO

CO

SR

7

World First GaN Power IC

10…30V

Single GaN IC

• Monolithic integration, 650V•GaN FET +GaN Driver + GaN Logic

Half-bridge GaN IC

• Monolithic integration, 650V•2x GaN FETs

•2x GaN drivers

•GaN Logic (level-shift, bootstrap, shoot-through)

Clean HF waveform

8

Active Clamp Flyback with Soft-Switching

S1Vsw

iLm

iDiLr

S2

Cr

VIN

n:1

iLr

Vsw

id

iLm

iLr

VSW

S1

iLm

id

iLr

Vsw

id

iLm

Commercial IC Available !!

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GaN vs. Si in ACF2%-3% Higher Efficiency with Low COSS, QG, Qrr , Eoff

Courtesy of Texas Instruments (ACF w/ pri resonance)

GaN: NV6260

iLr(RMS) = 0.9A

iLr (1 A/div) VSW (100 V/div)VSR (20 V/div)1 μs/div

iLr

-0.2A

Si: IPA60R299CP

iLr(RMS) = 1.1A

iLr

iLr (1 A/div) VSW (100 V/div)VSR (20 V/div)1 μs/div

-0.5A

Vbulk (V)

DC

/DC

Eff

icie

ncy

(%

)

600V Si + Partial ZVS

650V GaN+ Full ZVS tuning

3%2%

600V Si + Partial ZVS tuning

IPA60R299CP NV6260 (per FET)

Voltage Rating (V) 650 650

RDS(ON) 270 160

Co(tr) (pF) 120 50

Qg (nC) 22 2.5

Qrr (nC) 3900 0

40% ↓

60% ↓

90% ↓

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Advanced Magnetic Material

2.5

2.0

1.5

1.0

0.50.01 0.1 1 10 100

3.0

F3

/4=

Bf3

/4 (T

·Hz3

/4)

x103

ML91S(Hitachi Metal)

(Pv=500mW/cm3)

3C90(Ferroxcube)

3F35(Ferroxcube)

Mo

dif

ied

Pe

rfo

rman

ce f

acto

r

~1990s

~2000s

~2010s67

(Fair-Rite)~2015s

Fs(MHz)

Future

A. J. Hanson, J. A. Belk, S. Lim, C. R. Sullivan and D. J. Perreault, "Measurements and Performance Factor Comparisons of Magnetic Materials at High Frequency," in IEEE Transactions on

Power Electronics, vol. 31, no. 11, pp. 7909-7925, Nov. 2016.

Y. Han, G. Cheung, A. Li, C. R. Sullivan and D. J. Perreault, "Evaluation of Magnetic Materials for Very High Frequency Power Applications," in IEEE Transactions on Power

Electronics, vol. 27, no. 1, pp. 425-435, Jan. 2012.

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Magnetic: Bulky / Expensive Small / Cheap

Freq (kHz)

Vol (mm3)

100 200 300 1000

12000

6000

4000

2000

RM10

Chrome book(65kHz)

~ EQ25

Innergie(200kHz)

ER23

CPES(1MHz)

65kHz → 200kHz 2.5x size reduction

200kHz → 400kHz 1.5x size reduction

8000

10000

400kHz → 1MHz 1.5x size reduction

ER25

Navitas(400kHz)

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Planar MagneticsManufacturability

SR on sec winding, minimized Lk & Rac

Shielding integrated as pri winding

Safety rule compliance

Pri 2Sec 2

Sec 1

Pri 3-6Pri 1

Pri 7-10

Pri as shielding

12

0.31”

Pri 1

Pri 2

Pri 3 ~ 10

Sec 1

Sec 2

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45 W in 11 mm = HF Planar ACF

AC Bridge

NV611x Power ICs ACF IC UCC28780

SR FET

PD IC

Type-CReceptacle

Planar Transformer

Bulk Caps

EMIFilter

Proprietary; Authorized Use with Navitas License

• Size : 29 cc (41 cc with case)

• Density : 1.7 W/cc (27 W/in3), 1.1 W/cc (18 W/in3) cased

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Cool Operation

AC Bridge 80°C

GaNFastPower IC 75°C, 80°C

SR IC 85°CSR FET 85°C

90 VAC, 45 W, 25 °C, uncased, no airflow,no thermal compound / heatsinking

Transformer 80°C

Top Bottom

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High Efficiency

0.8

0.82

0.84

0.86

0.88

0.9

0.92

0.94

0.5 1 1.5 2 2.5 3 3.5 4 4.5

Effi

cie

ncy

Vo=5V Vo=9V Vo=15V Vo=20V

115VAC

230VAC

CoC Tier 2

4-Point Average Efficiency

0.86

0.88

0.9

0.92

0.94

0.96

0.5 1 1.5 2 2.5 3 3.5 4 4.5

Eff

icie

ncy

Vo=5V

115Vac

Vo=9V Vo=15V

230Vac

90Vac

Vo=20V

Full Load Efficiency

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Quiet EMI (Conducted, Radiated)

CE: 115Vac 20V/2.25A CE: 230Vac 20V/2.25A

RE: 230Vac 20V/2.25AHorizontal

RE: 230Vac 20V/2.25AVertical

• Thanks to Matt Judkins, CEO of Made-in-Mind (Mu)

• Available via www.kickstarter.com now, and via www.amazon.com and airport stores in April

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Mu One: From Prototype to Mass Production

Images courtesy Made-in-Mind

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The New World of Fast Charging

Information available on www.navitassemi.com

Navitas Proprietary & Confidential 19