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GaN, AIN, InNand Their Alloys

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Cambridge University Press978-1-107-40912-5 - GaN, AIN, InN and Their Alloys: Materials Research Society SymposiumProceedings: Volume 831Editors: Christian Wetzel, Bernard Gil, Masaaki Kuzuhara and Michael ManfraFrontmatterMore information

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MATERIALS RESEARCH SOCIETYSYMPOSIUM PROCEEDINGS VOLUME 831

GaN, A1N, InNand Their Alloys

Symposium held November 29-December 3,2004, Boston, Massachusetts, U.S.A.

EDITORS:

Christian WetzelRensselaer Polytechnic Institute

Troy, New York, U.S.A.

Bernard GilUniversite Montpellier II

Montpellier, France

Masaaki KuzuharaUniversity of Fukui

Bunkyo, Fukui, Japan

Michael ManfraBell Laboratories, Lucent Technologies

Murray Hill, New Jersey, U.S.A.

IMIRISIMaterials Research Society

Warrendale, Pennsylvania






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CONTENTS

Preface xxi

Materials Research Society Symposium Proceedings xxii

LASERS AND LIGHT-EMITTING DIODES I

* Structural Defects Related Issues of GaN-Based Laser Diodes 3Shigetaka Tomiya, Motonobu Takeya, Shu Goto, andMasao Ikeda

Latest Developments in Blue-Violet Laser Diodes Grownby Molecular Beam Epitaxy 15

V. Bousquet, M. Kauer, K. Johnson, C. Zellweger,S.E. Hooper, and J. Heffernan

O Growth, Characterization, and Application of HighAl-Content AlGaN and High Power Ill-NitrideUltraviolet Emitters 21Z. Ren, S.-R. Jeon, M. Gherasimova, G. Cui, J. Han,H. Peng, Y.K. Song, A.V. Nurmikko, L. Zhou, W. Goetz,M. Krames, and H.-K. Cho

Fabrication of LED Based on III-V Nitride and ItsApplications 27

Naoki Shibata

Junction Temperature Measurements in Deep-UV Light-Emitting Diodes 37

Y. Xi, J.-Q. Xi, Th. Gessmann, J.M. Shah, J.K. Kim,E.F. Schubert, A.J. Fischer, M.H. Crawford, K.H.A. Bogart,and A.A. Allerman

Effect of GaN Surface Treatment on the Morphological andOptoelectronic Response of Violet Light Emitting Diodes 43

Muhammad Jamil, James R. Grandusky, andFatemeh Shahedipour-Sandvik

Moth-Eye Light-Emitting Diodes 49Hideki Kasugai, Yasuto Miyake, Akira Honshio,Takeshi Kawashima, Kazuyoshi Iida, Motoaki Iwaya,Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki,Hiroyuki Kinoshita, and Hiromu Shiomi

*Invited Paper

v






GROWTH

* Growth of Nonpolar GaN(llOO) Films and Heterostructuresby Plasma-Assisted Molecular Beam Epitaxy 57

Oliver Brandt, Yue Jun Sun, and Klaus H. Ploog

On the Dynamics of InGaN Dot Formation by RF-MBEGrowth 69

Tomohiro Yamaguchi, Sven Einfeldt, Stephan Figge,Carsten Kruse, Claudia Roder, and Detlef Hommel

GaN Quantum Dots Grown at High Temperatures byMolecular Beam Epitaxy 75

Tao Xu, Adrian Williams, Christos Thomidis,Theodore D. Moustakas, Lin Zhou, and David J. Smith

Ammonothermal Growth of GaN Utilizing NegativeTemperature Dependence of Solubility in Basic Ammonia 81

Tadao Hashimoto, Kenji Fujito, Feng Wu,Benjamin A. Haskell, Paul T. Fini, James S. Speck,and Shuji Nakamura

Metalorganic Chemical Vapor Deposition of Non-PolarIll-Nitride Films Over a-Plane SiC Substrates 87

Jiawei Li, Zheng Gong, Changqing Chen, Vinod Adivarahan,Mikhail Gaevski, Edmundas Kuokstis, Maxim Shatalov,Ying Gao, Zehong Zhang, Arul Arjunan, T.S. Sudarshan,H. Paul Maruska, Jinwei Yang, and M. Asif Khan

POSTER SESSION

Sublimation Growth of Aluminum Nitride-Silicon CarbideAlloy Crystals on SiC (0001) Substrates 95

Z. Gu, J.H. Edgar, E.A. Payzant, H.M. Meyer, L.R. Walker,A. Sarua, and M. Kuball

Determination of Surface Barrier Height and Surface StateDensity in GaN Films Grown on Sapphire Substrates 101

Seong-Eun Park, Joseph J. Kopanski, Youn-Seon Kang,Lawrence H. Robins, and Hyun-Keel Shin

* Invited Paper

VI






Excess Carrier Lifetime Measurements for GaN on SapphireSubstrates With Various Doping Concentrations and SurfaceConditions by the Microwave Photoconductivity Decay Method 107

Masashi Kato, Hideki Watanabe, Masaya Ichimura, andEisuke Arai

Fabrication and Characterization of GaN Nanopillar Arrays 113Y.D. Wang, S. Tripathy, SJ. Chua, and C.G. Fonstad

The Composition Dependence of the Optical Properties ofInN-Rich InGaN Grown by MBE 119

R.W. Martin, P.R. Edwards, S. Hernandez, K. Wang,I. Fernandez-Torrente, M. Kurouchi, Y. Nanishi, andK.P. O'Donnell

Unusual Properties of the Red and Green LuminescenceBands in Ga-Rich GaN 125

M.A. Reshchikov and H. Morko9

Reduction of Dislocation Density in AlGaN With High A1NMolar Fraction by Using a Rugged A1N Epilayer 131

Akira Ishiga, Takashi Onishi, Yuhuai Liu, Masaya Haraguchi,Noriyuki Kuwano, Tomohiko Shibata, Mitsuhiro Tanaka,Hideto Miyake, and Kazumasa Hiramatsu

Fabrication and Characterization of UV Schottky Detectorsby Using a Freestanding GaN Substrate 137

Yasuhiro Shibata, Atsushi Motogaito, Hideto Miyake,Kazumasa Hiramatsu, Youichiro Ohuchi, Hiroaki Okagawa,Kazuyuki Tadatomo, Tatsuya Nomura, Yutaka Hamamura,and Kazutoshi Fukui

Strain-Induced Effects on the Resonant Tunneling ofHoles in Zinc-Blende AIyGai_yN/AIxGai.xN/AlyGai.yNHeterostructures 143

C. Meguenni, K. Zitouni, N. Mokdad, and A. Kadri

Excitation Wavelength Dependent Raman Scattering inLow and Highly Degenerate InN Films 149

V.M. Naik, H. Dai, R. Naik, D.B. Haddad, J.S. Thakur,G.W. Auner, H. Lu, and WJ. Schaff

Growth of Uncracked Alo.8oGao.2oN/GaN DBR on Si(l l l ) 155M.B. Charles, MJ. Kappers, and CJ. Humphreys

vn






Electrical Characterization of As and [As+Si] Doped GaNGrown by Metalorganic Chemical Vapor Deposition 161

M. Ahoujja, S. Elhamri, R. Berney, Y.K. Yeo, andR.L. Hengehold

Polarity Control of GaN Films Grown by Metal OrganicChemical Vapor Deposition on (0001) Sapphire Substrates 167

Seiji Mita, Ramon Collazo, Raoul Schlesser, andZlatko Sitar

Effect of Low Temperature Annealing on High FieldMagnetoresistance and Hall Effect in (Ga,Mn)As DiluteMagnetic Semiconductors 173

K. Ghosh, Mohammad Arif, T. Kehl, R.J. Patel,S.R. Mishra, and J.G. Broerman

Dependence of the E2 and Ai(LO) Modes on InN Fractionin InGaN Epilayers 179

S. Hernandez, R. Cusco, L. Artus, K.P. O'Donnell,R.W. Martin, I.M. Watson, Y. Nanishi, M. Kurouchi,and W. Van der Stricht

Initial Stages of Growth of Gallium Nitride via IodineVapor Phase Epitaxy 185

WJ. Mecouch, BJ. Rodriguez, ZJ. Reitmeier, J-S. Park,R.F. Davis, and Z. Sitar

Characterization of the Carrier Confinement forInGaN/GaN Light Emitting Diode With MultiquantumBarriers 191

Jen-Cheng Wang, Chung-Han Lin, Ray-Ming Lin,Tzer-En Nee, Bor-Ren Fang, and Ruey-Yu Wang

Structural Properties of Eu Doped GaN and Its RelationWith Luminescence Properties 197

Hyungjin Bang, Takahiro Maruyama, Shigeya Naritsuka,and Katsuhiro Akimoto

Extended X-ray Absorption Fine Structure Studies ofInGaN Epilayers 203

V. Katchkanov, K.P. O'Donnell, J.F.W. Mosselmans,S. Hernandez, R.W. Martin, Y. Nanishi, M. Kurouchi,I. Watson, W. Van der Stricht, and E. Calleja

vin






X-ray Excited Optical Luminescence Studies of InGaN andRare-Earth Doped GaN Epilayers 209

V. Katchkanov, J.F.W. Mosselmans, K.P. O'Donnell,N.R.J. Poolton, and S. Hernandez

Growth and Characterization of InGaN/GaN LEDs onCorrugated Interface Substrate Using MOCVD 215

Sunwoon Kim, Jeong Tak Oh, Kyu Han Lee, Dong Joon Kim,Je Won Kim, Yong Chun Kim, and Jeong Wook Lee

The Effect of Periodic Silane Burst on the Properties ofGaN on Si (111) Substrates 221

K.Y. Zang, SJ. Chua, C.V. Thompson, L.S. Wang,S. Tripathy, and S.Y. Chow

Mechanism of Metalorganic MBE Growth of High QualityAlNonSi ( l l l ) 227

I. Gherasoiu, S. Nikishin, G. Kipshidze, B. Borisov,A. Chandolu, M. Holtz, and H. Temkin

Discrete Steps in the Capacitance-Voltage Characteristicsof GalnN/GaN Light Emitting Diode Structures 233

Y. Xia, E. Williams, Y. Park, I. Yilmaz, J.M. Shah,E.F. Schubert, and C. Wetzel

Optimization of p-Type AlGaN/GaN and GaN/TnGaNSuperlattice Design for Enhanced Vertical Transport 239

M.Z. Kauser, A. Osinsky, J.W. Dong, B. Hertog,A. Dabiran, and P.P. Chow

Influence of Mis-Orientation of C-Plane Sapphire Substrateon the Early Stages of MOCVD Growth of GaN Thin Films 245

Seong-woo Kim, Hideo Aida, and Toshimasa Suzuki

Thermally Stable Transparent Ru-Si-O Schottky Contactsfor n-Type GaN and AlGaN 251

E. Kaminska, A. Piotrowska, K. Golaszewska, R. Lukasiewicz,A. Szczesny, E. Kowalczyk, P. Jagodzinski, M. Guziewicz,A. Kudla, A. Barcz, and R. Jakiela

Probing the Formation of Two-Dimensional Electron Gasin AUnGaN/GaN Heterostructures by PhotoluminescenceSpectroscopy 257

C.B. Soh, W. Liu , S.J. Chua, S. Tripathy, and D.Z. Chi

IX






INDIUM NITRIDE

* MBE Growth and Characterization of Device-Quality ThickInN Epilayers; Comparison Between N-Polarity and In-PolarityGrowth Processes 265

Akihiko Yoshikawa, Yoshihiro Ishitani, Song-Bek Che,Ke Xu, Xinqiang Wang, Masayoshi Yoshitani,Wataru Terashima, and Naoki Hashimoto

Effects of the Nitridation Process of (0001) Sapphire onCrystalline Quality of InN Grown by RF-MBE 279

Daisuke Muto, Ryotaro Yoneda, Hiroyuki Naoi,Masahito Kurouchi, Tsutomu Araki, andYasushi Nanishi

RF-MBE Growth of InN Dots on N-Polar GaN Grown onVicinal c-Plane Sapphire 285

Naoki Hashimoto, Naohiro Kikukawa, Song-Bek Che,Yoshihiro Ishitani, and Akihiko Yoshikawa

Mechanisms of Raman Scattering in Doped Indium Nitride 291Claire Pinquier, Francois Demangeot, Jean Frandon,Miguel Gaio, Olivier Briot, Benedicte Maleyre,Sandra Clur-Ruffenach, and Bernard Gil

OPTICAL PROPERTIES

Micro-Photoluminescence Studies of Excitonic andMultiexcitonic States of Quantum Dot-Like LocalizationCenters in InGaN/GaN Structures 299

K. Sebald, H. Lohmeyer, J. Gutowski, S. Einfeldt,C. Roder, and D. Hommel

W Efficient Luminescence from {11.2} InGaN/GaNQuantum Wells 305Mitsuru Funato, Koji Nishizuka, Yoichi Kawakami,Yukio Narukawa, and Takashi Mukai

Carbon-Related Deep States in Compensated n-Type andSemi-Insulating GaN:C and Their Influence on YellowLuminescence 311

A. Armstrong, D. Green, A.R. Arehart, U.K. Mishra,J.S. Speck, and S.A. Ringel

*Invited Paper






Near Field Optical Spectroscopy of GaN/AIN Quantum Dots 317A. Neogi, B.P. Gorman, H. Morkos, T. Kawazoe, M. Ohtsu,and M. Kuball

Recombination Mechanism in Short-WavelengthGaN/AlGaN Quantum Wells 323

D. Fuhrmann, T. Retzlaff, U. Rossow, and A. Hangleiter

Oxygen Related Shallow Acceptor in GaN 329B. Monemar, P.P. Paskov, F. Tuomisto, K. Saarinen,M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, andS. Kimura

Photoluminescence Study of Plastically Deformed GaN 335I. Yonenaga, H. Makino, S. Itoh, T. Goto, and T. Yao

TRANSISTORS

AlGaN/GaN Field Effect Schottky Barrier Diode for a LowLoss Switching Device 343

Seikoh Yoshida, Nariaki Ikeda, Jiang Li, Kohji Hataya,Takahiro Wada, and Hironari Takehara

AlGaN/GaN HFETs and Insulated Gate HFETs DC andRF Stability 349

Alexei Koudymov, Salih Saygi, Naveen Tipirneni,Grigory Simin, Vinod Adivarahan, Jinwei Yang,andM. AsifKhan

Normally-Off Operation GaN HFET Using a Thin AlGaNLayer for Low Loss Switching Devices 355

Nariaki Ikeda, Kazuo Kato, Jiang Li, Kohji Hataya, andSeikoh Yoshida

Surface Stabilization for Higher Performance AlGaN/GaNHEMT With In Situ MOVPE SiN 361

M. Germain, M. Leys, J. Derluyn, S. Boeykens, S. Degroote,W. Ruythooren, J. Das, R. Vandersmissen, D.P. Xiao,W. Wang, and G. Borghs

XI






PHOTONIC APPLICA TIONS

* O Resonantly Enhanced Second Harmonic Generation in aOne-Dimensional GaN-Based Photonic Crystal Slab 369

Jeremi Torres, Marine Le Vassor d'Yerville,David Cassagne, Rene Legros, Jean-Paul Lascaray,Emmanuel Centeno, Jean-Paul Albert, andDominique Coquillat

8 Ultrafast All-Optical Switches Based on IntersubbandTransitions in GaN/AIN Multiple Quantum Wells forTb/s Operation 379Jahan M. Dawlaty, Farhan Rana, and William J. Schaff

The Ga-Nitride/Air Two-Dimensional Photonic Quasi-Crystals Fabricated on GaN-Based Light Emitters 385

Bei Zhang, ZhenSheng Zhang, Jun Xu, Qi Wang,ZhiJian Yang, WeiHua Chen, XiaoDong Hu,ZhiXin Qin, GuoYi Zhang, and DaPeng Yu

POSTER SESSION

High Quality, Low Cost Continuous Poly-GaN Film on Siand Glass Substrates Produced by Spin Coating 393

Huaqiang Wu, Athanasios Bourlinos, Emmanuel P. Giannelis,and Michael G. Spencer

The Intrinsic Free Carrier Mobility in AlGaN/GaNQuantum Wells 399

F. Carosella, M. Germain, and J.-L. Farvacque

Reduction of Threading Dislocations in GaN Grown on 'c'Plane Sapphire by MOVPE 405

R. Datta, MJ. Kappers, J.S. Barnard, and C.J. Humphreys

Microstructure of Highly p-Type Doped GaN Sub-ContactLayers for Low-Resistivity Contacts 411

R. Kroger, J. Dennemarck, T. Bottcher, S. Figge, andD. Hommel

Cathodoluminescence of Praseodymium Doped A1N, GaNand Turbo Static BN 417

Muhammad Maqbool, H.H. Richardson, and M.E. Kordesch

* Invited Paper

xii






Strong Room Temperature 510 nm Emission From CubicInGaN/GaN Multiple Quantum Wells 423

S.F. Li, D.J. As, K. Lischka, D.G. Pacheco-Salazar,L.M.R. Scolfaro, J.R. Leite, F. Cerdeira, and E.A. Meneses

High Pressure Annealing of HVPE GaN Free-StandingFilms: Redistribution of Defects and Stress 429

T. Paskova, T. Suski, M. Bockowski, P.P. Paskov,V. Darakchieva, B. Monemar, F. Tuomisto, K. Saarinen,N. Ashkenov, M. Schubert, C. Roder, and D. Hommel

Comparison of the Effect of Gate Dielectric Layer on2DEG Carrier Concentration in Strained AlGaN/GaNHeterostructure 435

W. Wang, J. Derluyn, M. Germain, I. Dewolf, M. Leys,S. Boeykens, S. Degroote, W. Ruythooren, J. Das,D. Schreurs, B. Nauwelaers, and G. Borghs

X-ray Characterization of GaN Single Crystal Layers Grownby the Ammonothermal Technique on HVPE GaN Seeds andby the Sublimation Technique on Sapphire Seeds 441

Balaji Raghothamachar, Michael Dudley, Buguo Wang,Michael Callahan, David Bliss, Phanikumar Konkapaka,Huaqiang Wu, and Michael Spencer

Synchrotron White Beam X-ray Topography (SWBXT)and High Resolution Triple Axis Diffraction Studies onA1N Layers Grown on 4H- and 6H-SiC Seeds 447

Balaji Raghothamachar, Michael Dudley, Rafael Dalmau,Raoul Schlesser, and Zlatko Sitar

P-Type GaN Epitaxial Layers and AlGaN/GaNHeterostructures With High Hole Concentration andMobility Grown by HVPE 453

A. Usikov, O. Kovalenkov, V. Ivantsov, V. Sukhoveev,V. Dmitriev, N. Shmidt, D. Poloskin, V. Petrov, andV. Ratnikov

Impact of H2-Preannealing of the Sapphire Substrate onthe Crystallization of Low-Temperature-Deposited A1NBuffer Layer 459

Michinobu Tsuda, Krishnan Balakrishnan, Motoaki Iwaya,Satoshi Kamiyama, Hiroshi Amano, and Isamu Akasaki

xin






Low-Frequency Noise Characterization in AlGaN/GaNHEMTs With Varying Gate Recess Depths 465

Shrawan. K. Jha, Bun. H. Leung, Charles C. Surya,Heins Schweizer, and Manfred. H. Pilkhuhn

Influence of Substrate Misorientation Angle and Directionin Growth of GaN on Off-Axis SiC (0001) 471

Jun Suda, Yuki Nakano, and Tsunenobu Kimoto

Molecular Beam Epitaxy of GaN on Lattice-Matched ZrB2

Substrates Using Low-Temperature GaN and A1NNucleation Layers 477

Rob Armitage, Kazuhiro Nishizono, Jun Suda, andTsunenobu Kimoto

Self-Organized GaN/AIN Superlattice NanocolumnCrystals Grown by RF-MBE 483

Kouji Yamano, Akihiko Kikuchi, and Katsumi Kishino

NEW DIRECTIONS INNITRIDE RESEARCH

* Spintronics in Nitrides 491Tomasz Dietl

Evidence of Carrier Mediated Ferromagnetism inGaN:Mn/GaN:Mg Heterostructures 503

F. Erdem Arkun, Mason J. Reed, Erkan Acar Berkman,Nadia A. El-Masry, John M. Zavada, M. Oliver Luen,Meredith L. Reed, and Salah M. Bedair

Synthesis and Properties of GaxMni_xN Films 509R. Zhang, Y.Y. Yu, X.Q. Xiu, Z.L. Xie, S.L. Gu,B. Shen, Y. Shi, and Y.D. Zheng

Impact of Manganese Incorporation on the Structural andMagnetic Properties of MOCVD-Grown Ga^MnJV 515

Matthew H. Kane, Ali Asghar, Martin Strassburg,Qing Song, Adam M. Payne, Christopher J. Summers,Z. John Zhang, Nikolaus Dietz, and Ian T. Ferguson

* Invited Paper

xiv






Optical and Structural Investigations on Mn-Ion States inMOCVD-Grown GalxMnxN 521

Martin Strassburg, Jayantha Senawiratne, Christoph Hums,Nikolaus Dietz, Matthew H. Kane, Ali Asghar,Christopher J. Summers, Ute Haboeck, Axel Hoffmann,Dmitry Azamat, Wolfgang Gehlhoff, and Ian T. Ferguson

* 8 Site Multiplicity of Rare Earth Ions in Ill-Nitrides 527K.P. O'Donnell, V. Katchkanov, K. Wang, R.W. Martin,P.R. Edwards, B. Hourahine, E. Nogales, J.F.W. Mosselmans,B. De Vries, and the RENiBEl Consortium

Aquamarine Luminescence Band in Undoped GaN 537M.A. Reshchikov, L. He, RJ. Molnar, S.S. Park,K.Y. Lee, and H. Morko£

LASERS AND LIGHT-EMITTING DIODES II

* Advances in AlGaN-Based Deep UV LEDs 545M.H. Crawford, A.A. Allerman, A J. Fischer,K.H.A. Bogart, S.R. Lee, W.W. Chow, S. Wieczorek,RJ. Kaplar, and S.R. Kurtz

Development of Dual MQW Region LEDs for GeneralIllumination 557

David Brackin Nicol, Ali Asghar, Martin Strassburg,My Tran, Ming Pan, Hun Kang, Ian T. Ferguson,Mustafa Alevi, Jayantha Senawiratne, Christoph Hums,Nikolaus Dietz, and Axel Hoffmann

Electro-Optic and Thermal Studies of Multi-Quantum WellLight Emitting Diodes in InGaN/GaN/Sapphire Structure 563

Jeong Park, Moo Whan Shin, and Chin C. Lee

* Nitride-Based Light-Emitting Diodes Grown on ParticularSubstrates: ZrB2, (3038) 4H-SiC and r-Faced Sapphire 569

Satoshi Kamiyama, Motoaki Iwaya, Hiroshi Amano, andIsamu Akasaki

* Efficient and Reliable Homoepitaxially-Grown InGaN-Based Light-Emitting Diodes 581

X.A. Cao, J.M. Teetsov, S.F. LeBoeuf, S.D. Arthur, andJ. Kretchmer

"Invited Paper

xv






Characterization of Minority-Carrier Hole Transport inNitride-Based Light-Emitting Diodes With Optical andElectrical Time-Resolved Techniques 587

R.J. Kaplar, S.R. Kurtz, D.D. Koleske, A.A. Allerman,AJ. Fischer, and M.H. Crawford

POSTER SESSION

Grain Expansion and Subsequent Seeded Growth of A1NSingle Crystals 595

Dejin Zhuang, Raoul Schlesser, and Zlatko Sitar

Optimization of Growth and Activation of Highly Dopedp-Type GaN for Tunnel Junctions 601

David B. Nicol, Ali Asghar, My Tran, Dhairya Mehta,and Ian T. Ferguson

Sublimation Growth of A1N Bulk Crystals by Seeded andSpontaneous Nucleation Methods 607

Krishnan Balakrishnan, Masao Banno, Kiyotaka Nakano,Go Narita, Noritaka Tsuchiya, Masataka Imura,Motoaki Iwaya, Satoshi Kamiyama, Kenji Shimono,Tadashi Noro, Takashi Takagi, Hiroshi Amano, andIsamu Akasaki

Resonant-Raman Scattering of ZnO Crystallites: TheQuasi Nature of the LO Mode 615

Xiang-Bai Chen, John L. Morrison, Jesse Huso,Jonathan G. Metzger, Leah Bergman, andShlomo Efrima

Direct AFM Observation of Strain Effects on MOCVD-Grown GaN Epilayer Surface Morphology 621

D.I. Florescu, D.S. Lee, J.C. Ramer, V.N. Merai,A. Parekh, D. Lu, E.A. Armour, and W.E. Quinn

Optical Characteristics of Amorphous III-V NitrideThin Films 627

Jebreel M. Khoshman and Martin E. Kordesch

High-Frequency Generation in Low-Mobility Superlattices 635Vladimir Litvinov and Alexander Manasson

xvi






Optimization of GaN Channel Conductivity inAlGaN/GaN HFET Structures Grown by MOVPE 641

S.M. Hubbard, G. Zhao, D. Pavlidis, E. Cho, andW. Sutton

Pressure Dependence of Elastic Constants in Wurtzite andZinc-Blende Nitrides and Their Influence on the OpticalPressure Coefficients in Nitride Heterostructures 647

Siawomir P. Lepkowski and Jacek A. Majewski

Modeling of Elastic, Piezoelectric and Optical Propertiesof Vertically Correlated GaN/AIN Quantum Dots 653

Slawomir P. Lepkowski, Grzegorz Jurczak,Pawel Dhizewski, and Tadeusz Suski

Compositional Ordering in InxGai_xN and Its Influence onOptical Properties 659

Z. Liliental-Weber, D.N. Zakharov, K.M. Yu, J. Wu,S.X. Li, J.W. Ager III, W. Walukiewicz, E.E. Haller,H.Lu,andW.J.Schaff

Transmission Electron Microscopy Study of an EpitaxialGate Oxide on III-N Semiconductor Structures 665

Yoga. N. Saripalli, X-Q. Liu, D.W. Barlage,M.A.L. Johnson, D. Braddock, N.A. Stoddard,and A. Chugh

Fabrication of Silicon Nitride Film Using Pure NitrogenPlasma Generated Near Atmospheric Pressure for III-VSemiconductor Fabrication 671

R. Hayakawa, T. Yoshimura, M. Nakae, T. Uehara,A. Ashida, and N. Fujimura

A Model for the Critical Height for DislocationAnnihilation and Recombination in GaN ColumnsDeposited by Patterned Growth 677

M.E. Twigg, N.D. Bassim, C.R. Eddy, R.L. Henry,R.T. Holm, and M.A. Mastro

Group III Nitrides Grown on 4H-SiC (3038) Substrate byMetal-Organic Vapor Phase Epitaxy 685

Akira Honshio, Tsukasa Kitano, Masataka Imura,Yasuto Miyake, Hideki Kasugai, Kazuyoshi Iida,Takeshi Kawashima, Motoaki Iwaya, Satoshi Kamiyama,Hiroshi Amano, Isamu Akasaki, Hiroyuki Kinoshita, andHiromu Shiomi

xvn






Electroluminescence From GalnN Quantum Wells Grownon Non-(OOOl) Facets on Selectively Grown GaN Stripes 691

Barbara Neubert, Frank Habel, Peter Bruckner,Ferdinand Scholz, Till Riemann, and Jiirgen Christen

Growth and Characterization of Bulk GaN by Ga VaporTransport 697

Phanikumar Konkapaka, Huaqiang Wu, Yuri Makarov,and Michael G. Spencer

Self-Oriented Growth of GaN Films on Molten Gallium 703Hongwei Li, Hari Chandrasekaran, Mahendra K. Sunkara,Ramon Collazo, Zlatko Sitar, Michael Stukowski, andKrishna Raj an

Electrical and Optical Properties of 1 MeV-ElectronIrradiated AlxGalxN 709

Michael R. Hogsed, Mo Ahoujja, Mee-Yi Ryu,Yung Kee Yeo, James C. Petrosky, andRobert L. Hengehold

Comparative Study of GaN Based Light Emitting DevicesGrown on Sapphire and GaN Substrates 715

Stephan Figge, Jens Dennemarck, Gabriela Alexe, andDetlefHommel

Relationship of Basal Plane and Prismatic Stacking Faultsin GaN to Low Temperature Photoluminescence Peaks at-3.4 eV and -3.2 eV 721

J. Bai, M. Dudley, L. Chen, BJ. Skromme, P.J. Hartlieb,E. Michaels, J.W. Kolis, B. Wagner, R.F. Davis, U. Chowdhury,and R.D. Dupuis

Growth of GaN From Elemental Gallium and Ammoniavia Modified Sandwich Growth Technique 727

E. Berkman, R. Collazo, R. Schlesser, and Z. Sitar

Scanning Electron Microscopy CathodoluminescenceStudies of Piezoelectric Fields in an InGaN MultipleQuantum Well Light Emitting Diode 733

Kristin L. Bunker, Roberto Garcia, and Phillip E. Russell

Non-Polar GaN/AIN Superlattices on A-Plane A1N(500 nm) Buffer Layers Grown by RF-MBE 739

Takayuki Morita, Akihiko Kikuchi, and Katsumi Kishino

xvin






Optical Properties of II-IV-N2 Semiconductors 745John Muth, Ailing Cai, Andrei Osinsky, Henry Everitt,Ben Cook, and Ivan Avrutsky

NANOSTRUCTURES

Vapor-Liquid-Solid Growth of Ill-Nitride Nanowires andHeterostructures by Metal-Organic Chemical Vapor Deposition 753

J. Su, M. Gherasimova, G. Cui, J. Han, S. Lim, D. Ciuparu,L. Pfefferle, Y. He, A.V. Nurmikko, C. Broadbridge,A. Lehman, T. Onuma, M. Kurimoto, and S.F. Chichibu

A Nucleation Study of GaN Multifunctional Nanostructures 759Shalini Gupta, Hun Kang, Martin Strassburg, Ali Asghar,Jayantha Senawiratne, Nikolaus Dietz, and Ian T. Ferguson

Effect of the Polar Surface on GaN Nanostructure Morphologyand Growth Orientation 765

C.Y. Nam, D. Tham, and J.E. Fischer

Author Index 773

Subject Index 781

O Ribbon Award Winner

x Trophy Award Winner

xix











PREFACE

Symposium E, "GaN, A1N, InN and Their Alloys," was held November 29-December 3 at the2004 MRS Fall Meeting in Boston, Massachusetts. During nine half-day sessions, 18 invited talks,76 contributed talks, and 110 posters were presented.

This year's nitride symposium followed a sequence of symposia entitled "GaN and RelatedAlloys," reflecting emerging emphasis on the binaries of InN and A1N. The major thrust of thesymposium covered all topical developments of thin film growth, bulk growth techniques, methodsto cover the full ternary and quaternary alloy ranges toward InN and A1N and their characterization,strategies for structural defect reduction and their characterization, ways to better control p-typedoping and its characterization, device and defect physics with full inclusion and control ofpolarization effects, physics of surfaces and interfaces, and device processing techniques. In addition,advances in MBE devices, high power electronics, RF performance of electronics, UV emitters, highefficiency light emitters, photo and chemical sensors, as well as new applications within the group-Illnitrides are also covered.

These symposium proceedings capture the current status of this rapidly progressing field. Thisvolume will be useful for researchers working in the field of group-Ill nitrides, and for studentswho seek entry into this subject.

The organizers thank AIXTRON AG, Cree, Inc., Gatan, Inc., Lucent Technologies, Riber, Inc.,and SVT Associates, Inc. for their financial support of this symposium.

Christian WetzelBernard GilMasaaki KuzuharaMichael Manfra

December 2004






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 807— Scientific Basis for Nuclear Waste Management XXVII, V.M. Oversby, L.O. Werme, 2004,ISBN: 1-55899-752-0

Volume 808— Amorphous and Nanocrystalline Silicon Science and Technology—2004, R. Biswas,G. Ganguly, E. Schiff, R. Carius, M. Kondo, 2004, ISBN: 1-55899-758-X

Volume 809— High-Mobility Group-IV Materials and Devices, M. Caymax, E. Kasper, S. Zaima, K. Rim,P.F.P. Fichtner, 2004, ISBN: 1-55899-759-8

Volume 810— Silicon Front-End Junction Formation—Physics and Technology, P. Pichler, A. Claverie,R. Lindsay, M. Orlowski, W. Windl, 2004, ISBN: 1-55899-760-1

Volume 811— Integration of Advanced Micro- and Nanoelectronic Devices—Critical Issues and Solutions,J. Morais, D. Kumar, M. Houssa, R.K. Singh, D. Landheer, R. Ramesh, R. Wallace, S. Guha,H. Koinuma, 2004, ISBN: 1-55899-761-X

Volume 812— Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics—2004,R. Carter, C. Hau-Riege, G. Kloster, T-M. Lu, S. Schulz, 2004, ISBN: 1-55899-762-8

Volume 813— Hydrogen in Semiconductors, N.H. Nickel, M.D. McCluskey, S. Zhang, 2004,ISBN: 1-55899-763-6

Volume 814— Flexible Electronics 2004—Materials and Device Technology, B.R. Chalamala, B.E. Gnade,N. Fruehauf, J. Jang, 2004, ISBN: 1-55899-764-4

Volume 815— Silicon Carbide 2004—Materials, Processing and Devices, M. Dudley, P. Gouma, P.G. Neudeck,T. Kimoto, S.E. Saddow, 2004, ISBN: 1-55899-765-2

Volume 816— Advances in Chemical-Mechanical Polishing, D. Boning, J.W. Bartha, G. Shinn, I. Vos,A. Philipossian, 2004, ISBN: 1-55899-766-0

Volume 817— New Materials for Microphotonics, J.H. Shin, M. Brongersma, F. Priolo, C. Buchal, 2004,ISBN: 1-55899-767-9

Volume 818— Nanoparticles and Nanowire Building Blocks—Synthesis, Processing, Characterization andTheory, O. Glembocki, C. Hunt, C. Murray, G. Galli, 2004, ISBN: 1-55899-768-7

Volume 819— Interfacial Engineering for Optimized Properties III, C.A. Schuh, M. Kumar, V. Randle,C.B. Carter, 2004, ISBN: 1-55899-769-5

Volume 820— Nanoengineered Assemblies and Advanced Micro/Nanosystems, J.T. Borenstein,P. Grodzinski, L.P. Lee, J. Liu, Z. Wang, D. Mcllroy, L. Merhari, J.B. Pendry, D.P. Taylor,2004, ISBN: 1-55899-770-9

Volume 821— Nanoscale Materials and Modeling—Relations Among Processing, Microstructure andMechanical Properties, P.M. Anderson, T. Foecke, A. Misra, R.E. Rudd, 2004,ISBN: 1-55899-771-7

Volume 822— Nanostructured Materials in Alternative Energy Devices, E.R. Leite, J-M. Tarascon,Y-M. Chiang, E.M. Kelder, 2004, ISBN: 1-55899-772-5

Volume 823— Biological and Bioinspired Materials and Devices, J. Aizenberg, C. Orme, W.J. Landis,R. Wang, 2004, ISBN: 1-55899-773-3

Volume 824— Scientific Basis for Nuclear Waste Management XXVIII, J.M. Hanchar, S. Stroes-Gascoyne,L. Browning, 2004, ISBN: 1-55899-774-1

Volume 825E—Semiconductor Spintronics, B. Beschoten, S. Datta, J. Kikkawa, J. Nitta, T. Schapers, 2004,ISBN: 1-55899-753-9

Volume 826E—Proteins as Materials, V.P. Conticello, A. Chilkoti, E. Atkins, D.G. Lynn, 2004,ISBN: 1-55899-754-7

Volume 827E—Educating Tomorrow's Materials Scientists and Engineers, K.C. Chen, M.L. Falk,T.R. Finlayson, W.E. Jones Jr., L J. Martinez-Miranda, 2004, ISBN: 1-55899-755-5

Volume 828— Semiconductor Materials for Sensing, S. Seal, M-I. Baraton, N. Murayama, C. Parrish, 2005,ISBN: 1-55899-776-8

Volume 829— Progress in Compound Semiconductor Materials IV—Electronic and OptoelectronicApplications, G.J. Brown, M.O. Manasreh, C. Gmachl, R.M. Biefeld, K. Unterrainer, 2005,ISBN: 1-55899-777-6

Volume 830— Materials and Processes for Nonvolatile Memories, A. Claverie, D. Tsoukalas, T-J. King,J. Slaughter, 2005, ISBN: 1-55899-778-4

Volume 831— GaN, A1N, InN and Their Alloys, C. Wetzel, B. Gil, M. Kuzuhara, M. Manfra, 2005,ISBN: 1-55899-779-2

Volume 832— Group-IV Semiconductor Nanostructures, L. Tsybeskov, D.J. Lockwood, C. Delerue,M. Ichikawa, 2005, ISBN: 1-55899-780-6






MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 833— Materials, Integration and Packaging Issues for High-Frequency Devices II, Y.S. Cho,D. Shiffler, C.A. Randall, H.A.C. Tilmans, T. Tsurumi, 2005, ISBN: 1-55899-781-4

Volume 834— Magneto-Optical Materials for Photonics and Recording, K. Ando, W. Challener, R. Gambino,M. Levy, 2005, ISBN: 1-55899-782-2

Volume 835— Solid-State Ionics—2004, P. Knauth, C. Masquelier, E. Traversa, E.D. Wachsman, 2005,ISBN: 1-55899-783-0

Volume 836— Materials for Photovoltaics, R. Gaudiana, D. Friedman, M. Durstock, A. Rockett, 2005,ISBN: 1-55899-784-9

Volume 837— Materials for Hydrogen Storage—2004, T. Vogt, R. Stumpf, M. Heben, I. Robertson, 2005,ISBN: 1-55899-785-7

Volume 838E—Scanning-Probe and Other Novel Microscopies of Local Phenomena in NanostructuredMaterials, S.V. Kalinin, B. Goldberg, L.M. Eng, B.D. Huey, 2005, ISBN: 1-55899-786-5

Volume 839— Electron Microscopy of Molecular and Atom-Scale Mechanical Behavior, Chemistry andStructure, D. Martin, D.A. Muller, E. Stach, P. Midgley, 2005, ISBN: 1-55899-787-3

Volume 840— Neutron and X-Ray Scattering as Probes of Multiscale Phenomena, S.R. Bhatia, P.G. Khalifah,D. Pochan, P. Radaelli, 2005, ISBN: 1-55899-788-1

Volume 841— Fundamentals of Nanoindentation and Nanotribology III, D.F. Bahr, Y-T. Cheng, N. Huber,A.B. Mann, KJ. Wahl, 2005, ISBN: 1-55899-789-X

Volume 842— Integrative and Interdisciplinary Aspects of Intermetallics, M.J. Mills, H. Clemens, C-L. Fu,H. Inui, 2005, ISBN: 1-55899-790-3

Volume 843— Surface Engineering 2004—Fundamentals and Applications, J.E. Krzanowski, S.N. Basu,J. Patscheider, Y. Gogotsi, 2005, ISBN: 1-55899-791-1

Volume 844— Mechanical Properties of Bioinspired and Biological Materials, C. Viney, K. Katti, F-J. Ulm,C. Hellmich, 2005, ISBN: 1-55899-792-X

Volume 845— Nanoscale Materials Science in Biology and Medicine, C.T. Laurencin, E. Botchwey, 2005,ISBN: 1-55899-793-8

Volume 846— Organic and Nanocomposite Optical Materials, A. Cartwright, T.M. Cooper, S. Kama,H. Nakanishi, 2005, ISBN: 1-55899-794-6

Volume 847— Organic/Inorganic Hybrid Materials—2004, C. Sanchez, U. Schubert, R.M. Laine, Y. Chujo,2005, ISBN: 1-55899-795-4

Volume 848— Solid-State Chemistry of Inorganic Materials V, J. Li, M. Jansen, N. Brese, M. Kanatzidis, 2005,ISBN: 1-55899-796-2

Volume 849— Kinetics-Driven Nanopatterning on Surfaces, E. Wang, E. Chason, H. Huang, G.H. Gilmer,2005, ISBN: 1-55899-797-0

Volume 850— Ultrafast Lasers for Materials Science, M.J. Kelley, E.W. Kreutz, M. Li, A. Pique, 2005,ISBN: 1-55899-798-9

Volume 851— Materials for Space Applications, M. Chipara, D.L. Edwards, S. Phillips, R. Benson, 2005,ISBN: 1-55899-799-7

Volume 852— Materials Issues in Art and Archaeology VII, P. Vandiver, J. Mass, A. Murray, 2005,ISBN: 1-55899-800-4

Volume 853E—Fabrication and New Applications of Nanomagnetic Structures, J-P. Wang, P.J. Ryan,K. Nielsch, Z. Cheng, 2005, ISBN: 1-55899-805-5

Volume 854E—Stability of Thin Films and Nanostructures, R.P. Vinci, R. Schwaiger, A. Karim, V. Shenoy,2005, ISBN: 1-55899-806-3

Volume 855E—Mechanically Active Materials, KJ. Van Vliet, R.D. James, P.T. Mather, W.C. Crone, 2005,ISBN: 1-55899-807-1

Volume 856E—Multicomponent Polymer Systems—Phase Behavior, Dynamics and Applications, K.I. Winey,M. Dadmun, C. Leibig, R. Oliver, 2005, ISBN: 1-55899-808-X

Volume 858E—Functional Carbon Nanotubes, D.L. Carroll, B. Weisman, S. Roth, A. Rubio, 2005,ISBN: 1-55899-810-1

Volume 859E—Modeling of Morphological Evolution at Surfaces and Interfaces, J. Evans, C. Orme, M. Asta,Z. Zhang, 2005, ISBN: 1-55899-811-X

Volume 860E—Materials Issues in Solid Freeforming, S. Jayasinghe, L. Settineri, A.R. Bhatti, B-Y. Tay, 2005,ISBN: 1-55899-812-8

Volume 86IE—Communicating Materials Science—Education for the 21st Century, S. Baker, F. Goodchild,W. Crone, S. Rosevear, 2005, ISBN: 1-55899-813-6

Prior Materials Research Society Symposium Proceedings available by contacting Materials Research Society






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GaN, AIN, InN and Their Alloysassets.cambridge.org/97811074/09125/frontmatter/... · MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 831 GaN, A1N, InN and Their Alloys Symposium