Future Trend of Materials for Advanced Semiconductor Manufacturing

Nobu KOSHIBA

Representative Director and President

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• Future Trend of Semiconductor Devices

• Materials for Advanced Semiconductor

Manufacturing

− Lithography Materials

− Planarization and Cleaning Materials

− Packaging Materials

− Extension to Digital Medicine

• Summary

2

Contents

Progresses of SemiconductorYear ’14 ’16 ’18 ’20 ’22 ’24

Tech. node 20nm~14nm 10nm ~ 7nm ~ 5nm ~ 3nm ~ 2nm ~

Gate leng. (PR) 25 nm ~ 20 nm ~ 16 nm ~ 12 nm ~ 10 nm ~ 8 nm ~

Logic

Tech. trend

� 3D architecture

Flash

Tech. trend

� 3D integration

DRAM

Tech. trend

� wider bandwidth

Package

Planar FinFET

MOSFET

Si-Ge / III-V group Fin-FET

Wire

Wire bonding 3D NAND (48)

Band: 2.2Gbps

Wire bonding

Band: 3.2Gbps

Stack: 9 chips

TSVWire lessor optical connect?

non-MOSFET

non-charge

Band: 3.6Gbps

Stack: 13 chips

Band: 4.2Gbps

Stack: 17 chips

3D NAND (64)

3D NAND ( >100)

Emerging memory

WL-CSP

2.1D 2.5D

3D-WLP 3D w/ TSV

3

GAA

Moore’s Law Continues!

Year ’14 ’16 ’18 ’20 ’22 ’24 ’26 ’28

Min hp after multi. patterning 17nm 14nm 12nm 12nm 11nm 8.4nm 6.7nm 5.3nm

hp ~ 20nm imm DP

10 ~ 15nm imm QP

15 ~ 11nmDSA, EUV DP,

Imprint

11 ~ 8nm

DSA, EUV DP,

Imprint, ML2,

High NA EUV

8nm ~

EUV DP,

High NA EUV

DSA extension,

Imprint, ML2

ITRS 2013 (MPU Fins and Flash Lines)

Research Development

Pre-production Continuous

improvement

4

2007 40 nm LS, ArFi 2008 26 nm LS, ArFi DP 2010 19 nm LS, EUV

Photoresist Scaling

2015 13nm LS, EUV 9.5nm LS, DSA

� Continuous “Materials Innovation” of litho-chemistry extends

resolution limits5

EUV Resist Performance

LS Pattern

Exp. NXE3300B

Chemically Amplified Resist

Best in 2014

15nmLSBest in 2015

15nmLS

LWR: 5.9nm LWR: 5.3nmDose 40% down

New Platform

(Metal Resist)

24nmLS

24nmLS 24nmLS

CDU: 3.5nm CDU: 3.4nmDose 20% down

CH Pattern

Exp. NXE3100

� Chemically amplified photoresists made significant improvements

in photospeed while unconventional platforms appear to become a

viable option. 6

Patterned Area Open Area

190nm

45nm

Photo-Resist• Good LWR/CDU

• High resolution

Spin-on Inorg. ML• Resist compatibility

• High etch selectivity

Spin-on Org. UL• High etch selectivity

• Planarization

• Thermal Stability

Integrated Litho-solution for

Advanced Semiconductor Manufacturing

� Fully optimized and integrated litho-solution in conjunction

with low defect control to meet specific customers’ needs

through “Innovation One-on-One.”

7

+

Defect Control

ITRS 2012 (Yield Enhancement) 8

Comprehensive Supply Chain Control

� No compromise on integrity of raw materials supply in terms

of change control and materials quality profile.

� Semiconductor materials suppliers are the ones to bridge the

gap between semiconductor standards and (petro)chemical

industry’s common sense.

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Semiconductor

Industry

(Petro)Chemical

Industry

Semiconductor Materials Suppliers

Year ’14 ’16 ’18 ’20 ’22 ’24

Tech. node 20nm~14nm 10nm ~ 7nm ~ 5nm ~ 3nm ~ 2nm ~

Gate leng. (PR) 25 nm ~ 20 nm ~ 16 nm ~ 12 nm ~ 10 nm ~ 8 nm ~

Logic

Tech. trend

� 3D architecture

New Materials

Gate

Metallization

Dielectrics

Zr, Hf

Cu,W

k=2.55

+TaN/Ta,Co

k=2.55-2.4

+Ru

k=2.4-2.2

Ge, In

+Mn

k=2.2-2.0

+Graphen

k<2.0

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More New Materials to be introduced in Advanced Semiconductor Manufacturing

Planar FinFET

MOSFET

Si-Ge / III-V group Fin-FET

non-MOSFET

non-chargeGAA

FEOL Planarization and Cleaning

CMP Consumables� CMP Slurry with

size controlled particles

� CMP pad with controlled bulk

hardness and surface

morphology and characteristics.

Post-CMP Cleaner� Post-CMP Cleaner to

remove residue while

controlling surface

corrosion.

CMP Cleaning

W

FinFET

TEOS

SiN

11

W

TEOS

Residue No Residue!

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Advanced Slurry for III-V Materials

X-sec @ TEM

Applicable to Ge, InP & InGaAs

Extreme CMP

Rms < 0.5nmRms>20nm

Before CMP After CMP

� Good selectivity control and Rms less than 1nm after polish.

� No toxic gas generation during the polish process.

CMP

Surface Roughness Surface Roughness

Cu

NiCo

Cr

Al

Ag

Rh Ir Mo W

Ru

TaNb

Bu

lk r

esis

tivity (

mic

ro O

hm

cm

)

Melting Temperature (deg C)

Wire scaling

New Metallurgy in BEOL

� New metallurgy will be introduced into BEOL process.

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Year ’14 ’16 ’18 ’20 ’22 ’24

Tech. node 20nm~14nm 10nm ~ 7nm ~ 5nm ~ 3nm ~ 2nm ~

Gate leng. (PR) 25 nm ~ 20 nm ~ 16 nm ~ 12 nm ~ 10 nm ~ 8 nm ~

Package

WL-CSP

2.1D 2.5D

3D-WLP 3D w/ TSV

Plating resist� High aspect for Cu-pillar

� High resolution for RDL

�Wide process margin

Dielectrics� Dielectric properties

� Mechanical strength

� Photo-definable

Temporary bonding for TSV� Satisfy adhesion and de-bonding

properties

� No damage on thinned wafer

Materials for new process� Lift-off

� Spin-on metal (Metal ink)

More than Moore!

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Thick Resist for Metal Deposition

High Cu Pillar

(for Fan-out WLP)

� Extremely thick

(~200um)

� High photospeed

RDL

(for Fan-out WLP)

� High resolution

(<2um)

General Metal Depo.

(for Sputtering)

� Over-hung profile

� Save process cost

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Photo-resist

MetalPattern

For Cu Plating

Cu plated Cu sputtered

3.4um 2um80um

Cu plated

For Lift-off

Digital Medicine: Emerging Need for

Bio-Compatible Materials

µ µ µ µ fluidic devicesInjection molding-R2R-...

Si-based devicesSemiconductor

Simple – Cheap- DisposableExpensive, high complexity

Low technological value

Integration of Si

components in plastic

microfluidic cartridge

Hybrid devices

High technological value

Key to success

Personalised Healthcare:

Lab-on-chip

Biggest MARKET share

Mainly chip in LABLimited commercialization

Key challenge = Packaging and Integration16

Implantation

Explantation

Collaboration with U. Ghent : Prof L. Vlaminck & Prof R. Cornelissen

Implantation of 3 copies of 8 different samples for 2 months

•White milk goat

•3 years old

•Anesthetized before operation

Tissue

with sample

in formalin

Si-chip

Material coated

Sample structure

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How to confirm Bio-compatibility?

30µm

clean bond pad opening

No residues

29.3µm

Microfluidics

channel

Heater element

area

Basic material evaluation showed

•non-cytotoxic

•no unwanted interaction with biochemistry

•optical transparency / low out-gassing

•excellent resolution and patterning profile

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PA (Photo-definable Adhesive)

for imec’s Cell Sorter

Courtesy of imec

• More and aggressive “Materials Innovation” is required to support advanced semiconductor manufacturing to enable Moore’s Law extension and More-than-Moore.

• “Innovation One-on-One” and “Comprehensive Supply Chain Control” are the keys-for-success to make 10nm advanced manufacturing and beyond commercially successful.

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Summary