1 Edition 1.2 July 1999 FSX027WFGeneral Purpose GaAs FETItem Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol V V W °C °C V GS P T T STG T CH V DS Rating Condition Unit 12 -5 1.5 T c = 25°C -65 to 175 175 ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C) Eudynarecommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (V DS ) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with gate resistance of 1000Ω. 3. The operating channel temperature (T ch ) should not exceed 145°C. Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Symbol I DSS 70 110 150 - 100 - -0.7 - -1.2 -1.7 2.5 - -5.0 - - - 9.5 - V DS = 3V, I DS = 5.4mA V DS = 3V, I DS = 30mA f = 8GHz f = 4GHz f = 8GHz f = 12GHz f = 4GHz f = 8GHz f = 12GHz V DS = 8V, I DS = 0.7I DSS V DS = 8V, I DS = 0.7I DSS Channel to Case G.C.P.: Gain Compression Point V DS = 3V, I DS = 54mA V DS = 3V, V GS = 0V I GS = -5.4µA mA mS V dB - 24.5 - dBm 23.5 24.5 - dBm - 23.5 - dBm - 14.0 - dB 9.0 10.0 - dB - 6.5 - dB - 70 100 °C/W dB V g m V p V GSO NF G as Output Power at 1 dB G.C.P. P 1dB Power Gain at 1 dB G.C.P. G 1dB Thermal Resistance R th Test Conditions Unit Limit Typ. Max. Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) CASE STYLE: WF DESCRIPTION The FSX027WF is a general purpose GaAs F ET designed for medium power applications up to the 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Eudynastringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURES • Medium Power Output: P 1dB =24.5dBm(Typ.)@8.0GHz • High Power Gain: G 1dB =10dB(Typ.)@8.0GHz • Hermetic Metal/Ceramic Package • Proven Reliability
