FQD8P10 / FQU8P10 - Farnell · 2015. 12. 10. · FQD8P10 / FQU8P10 — P-Channel QFET ® MOSFET ©2010 Fairchild Semiconductor Corporation FQD8P10 / FQU8P10 Rev. C2 3 !ˆ˜ ˚ ˜˘

November 2013

FQD8P10 / FQU8P10P-Channel QFET® MOSFET-100 V, -6.6 A, 530 mΩ

Description

FQD

8P10 / FQU

8P10 — P-C

hannel QFET

® MO

SFET

©2010 Fairchild Semiconductor Corporation FQD8P10 / FQU8P10 Rev. C2

www.fairchildsemi.com1

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features

Absolute Maximum Ratings TC = 25oC unless otherwise noted.

Thermal CharacteristicsSymbol Parameter FQD8P10TM

FQU8P10TUUnit

RJC Thermal Resistance, Junction to Case, Max. 2.84oC/W

RJAThermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110

Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. 50

• -6.6 A, -100 V, RDS(on) = 530 mΩ (Max) @ VGS = -10 V,ID = -3.3 A

• Low Gate Charge (Typ. 12 nC)

• Low Crss (Typ. 30 pF)

• 100% Avalanche Tested

GD

S

I-PAKD-PAKG

S

D

G

S

D

Symbol Parameter FQD8P10TM / FQU8P10TU UnitVDSS Drain-Source Voltage -100 VID Drain Current - Continuous (TC = 25°C) -6.6 A

- Continuous (TC = 100°C) -4.2 AIDM Drain Current - Pulsed (Note 1) -26.4 AVGSS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 150 mJIAR Avalanche Current (Note 1) -6.6 AEAR Repetitive Avalanche Energy (Note 1) 4.4 mJdv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/nsPD Power Dissipation (TA = 25°C) * 2.5 W

Power Dissipation (TC = 25°C) 44 W- Derate above 25°C 0.35 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,1/8" from case for 5 seconds

300 °C

Package Marking and Ordering InformationPart Number Top Mark Package Reel Size Tape Width Quantity

FQD8P10FQD8P10TM D-PAK 330 mm 16 mm 2500 units

FQD

8P10 / FQU

8P10 — P-C

hannel QFET

® MO

SFET



1. Repetitive rating : pulse-width limited by maximum junction temperature.2. L = 5.2 mH, IAS = -6.6 A, VDD = -25 V, RG = 25 Ω, starting TJ = 25oC.3. ISD ≤ -8.0 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC.4. Essentially independent of operating temperature.

Packing MethodTape and Reel

FQU8P10FQU8P10TU I-PAK N/A N/A 70 unitsTube

Electrical Characteristics TC = 25oC unless otherwise noted.

Symbol Parameter Test Conditions Min Typ Max UnitOff CharacteristicsBVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A -100 -- -- VBVDSS/ TJ

Breakdown Voltage Temperature Coefficient

ID = -250 A, Referenced to 25°C -- -0.1 -- V/°C

IDSS Zero Gate Voltage Drain CurrentVDS = -100 V, VGS = 0 V -- -- -1 AVDS = -80 V, TC = 125°C -- -- -10 A

IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nAIGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nAOn Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A -2.0 -- -4.0 VRDS(on) Static Drain-Source

On-ResistanceVGS = -10 V, ID = -3.3 A -- 0.41 0.53

gFS Forward Transconductance VDS = -40 V, ID = -3.3 A -- 4.1 -- SDynamic CharacteristicsCiss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

-- 360 470 pFCoss Output Capacitance -- 120 155 pFCrss Reverse Transfer Capacitance -- 30 40 pFSwitching Characteristics td(on) Turn-On Delay Time VDD = -50 V, ID = -8.0 A,

RG = 25

(Note 4)

-- 11 30 nstr Turn-On Rise Time -- 110 230 nstd(off) Turn-Off Delay Time -- 20 50 nstf Turn-Off Fall Time -- 35 80 nsQg Total Gate Charge VDS = -80 V, ID = -8.0 A,

VGS = -10 V (Note 4)

-- 12 15 nCQgs Gate-Source Charge -- 3.0 -- nCQgd Gate-Drain Charge -- 6.4 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- -6.6 AISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -26.4 AVSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -6.6 A -- -- -4.0 Vtrr Reverse Recovery Time VGS = 0 V, IS = -8.0 A,

dIF / dt = 100 A/s -- 98 -- ns

Qrr Reverse Recovery Charge -- 0.35 -- C

FQD

8P10 / FQU

8P10 — P-C

hannel QFET

® MO

SFET



!

0.0 0.5 1.0 1.5 2.0 2.5 3.010

-1

100

101

150

※ Notes :1. V

GS = 0V

2. 250μs Pulse Test

25

-ID

R ,

Rev

erse

Dra

in C

urre

nt

[A]

-VSD

, Source-Drain Voltage [V]

0 5 10 15 20 250.0

0.3

0.6

0.9

1.2

1.5

※ Note : TJ = 25

VGS

= - 20V

VGS

= - 10V

RD

S(o

n)

[],

Dra

in-S

ourc

e O

n-R

esis

tanc

e

-ID , Drain Current [A]

2 4 6 8 1010

-1

100

101

150

25

-55※ Notes : 1. V

DS = -40V

2. 250μs Pulse Test

-ID ,

Dra

in C

urre

nt

[A]

-VGS

, Gate-Source Voltage [V]10

-1 010

110

-2

10-1

100

101

VGS

Top : -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V

Bottom : -4.5 V

※ Notes :1. 250μs Pulse Test2. T

C = 25

-ID,

Dra

in C

urre

nt [A

]

10

-VDS

, Drain-Source Voltage [V]

0 22 4 6 8 10 12 140

2

4

6

8

10

12

VDS

= -50V

VDS

= -20V

VDS

= -80V

※ Note : ID = -8.0 A

-VG

S,

Gat

e-S

ourc

e V

olta

ge [

V]

QG, Total Gate Charge [nC]

10-1 100 1010

100

200

300

400

500

600

700

800

900C

iss = C

gs + C

gd (C

ds = shorted)

Coss

= Cds + C

gd

Crss

= Cgd

※ Notes :1. V

GS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Ca

paci

tan

ce [p

F]

-VDS


Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

FQD

8P10 / FQU

8P10 — P-C

hannel QFET

® MO

SFET



!

Z JC

(t), T

herm

al R

espo

nse

[o C/W

]

1 0 -5 1 0 -4 1 0 -3 1 0 -2 1 0 -1 1 0 0 1 0 1

1 01-

1 0 0

※ N o te s : 1 . 2 . 3 .

Z θ J C( t) = 2 .8 4 /W M a x .

D u ty F a c to r , D = t1/ t

2

TJ M

- TC

= PD M

* Z θ J C( t)

s in g le p u ls e

D = 0 .5

0 .0 2

0 .2

0 .0 5

0 .1

0 .0 1

25 50 75 100 125 1500

1

2

3

4

5

6

7

-ID,

Dra

in C

urre

nt [

A]

TC, Case Temperature []

100 101 10210

-1

100

101

102

DC

10 ms

1 ms

100 s

Operation in This Area is Limited by R

DS(on)

※ Notes :

1. TC = 25

oC

2. TJ = 150

oC

3. Single Pulse

-ID,

Dra

in C

urre

nt [

A]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

※ Notes :1. V

GS = -10 V

2. ID = -3.3 A

RD

S(O

N),

(Nor

mal

ized

)D

rain

-Sou

rce

On-

Res

ista

nce

TJ, Junction Temperature [

oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

※ Notes : 1. V

GS = 0 V

2. ID = -250 μA

-BV

DS

S,

(Nor

mal

ized

)D

rain

-Sou

rce

Bre

akdo

wn

Vol

tag

e

TJ, Junction Temperature [

oC]

-VDS


Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Currentvs. Case Temperature

Figure 7. Breakdown Voltage Variationvs. Temperature

Figure 8. On-Resistance Variationvs. Temperature

t1, S q u a re W a v e P u ls e D u ra t io n [s e c ]

Figure 11. Transient Thermal Response Curve

t1

PDM

t2



FQD

8P10 / FQU

8P10 — P-C

hannel QFET

® MO

SFET

Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VVDSDS

VVGSGS1010%%

90%90%

ttd(d(onon)) ttrr

tt onon tt ofofff

ttd(d(ofofff)) ttffVVDDDD

VVDSDS

RRLL

DUTDUT

RRGG

VVGSGS

ChChargargee

VVGSGS

QQgg

QQgsgs QQgdgdVVGSGS

DUDUTT

VVDSDS

300300nFnF

50K50KΩΩ

200n200nFF12V12V

SamSamee T Tyypepeas as DUDUTT

EEEAS AS AS ----=== 21212121------------ LLL ASASASIII

BVBVDSDSSS222 ----------------------------------------

BVBVDSDSSS - V- VDDDD

VVDDDD

VVDSDS

BVBVDSSDSS

t t pp

VVDDDD

IIASAS

VVDS DS (t)(t)

IID D (t(t))

TiTimmee

DUDUTT

RRGG

LLL

III DDD

t t pp

IG = const.

VVGSGS

VVGSGS

FQD

8P10 / FQU

8P10 — P-C

hannel QFET

® MO

SFET



Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

••

DUTDUT

VVDSDS

++

__

DrivDrivererRRGG

ComCompplliimmentent ofof DUTDUT (N-(N-CChannelhannel))

VVGSGS •• ddvv//dtdt ccoontntrroolllleed d bbyy RRGG

IISDSD ccononttrrolollleded byby pupullsse e peperriiodod

VVDDDD

LLLII SDSD

1010VVVVGSGS

( ( DrivDriver er ))

II SDSD

( ( DUT DUT ))

VVDSDS

( ( DUT DUT ))

VVDDDDBoBodydy DDiiooddee

ForForwward ard VVololttagage e DrDropop

IIFMFM ,, BoBodydy DDiiodode e FFororwwaarrd d CCuurrrrenentt

VVSDSD

BoBodydy DDiiodode e RReevveerrssee CCuurrrrenentt

IIRMRM

BoBodydy DiDiodode e RReecovcoveerryy dvdv/d/dtt

didi//dtdt

D D D === ---------GateGateGate--------------------------- PPPulululsss------------------------e e e WWWiiiddd---------------ttthhh---GaGaGate te te PuPuPulllssseee PePePerrriiiododod



FQD

8P10 / FQU

8P10 — P-C

hannel QFET

® MO

SFET

Mechanical Dimensions

Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&ABPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003



FQD

8P10 / FQU

8P10 — P-C

hannel QFET

® MO

SFET

Mechanical Dimensions

Figure 17. TO251 (I-PAK), Molded, 3-LeadPackage drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO251-003



TRADEMARKSThe following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks.

*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONSDefinition of Terms

AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®

Dual Cool™EcoSPARK®

EfficentMax™ESBC™

Fairchild®

Fairchild Semiconductor®FACT Quiet Series™FACT®

FAST®

FastvCore™FETBench™FPS™

F-PFS™FRFET®

Global Power ResourceSM

GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louder and Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®OptoHiT™OPTOLOGIC®

OPTOPLANAR®

PowerTrench®

PowerXS™Programmable Active Droop™QFET®

QS™Quiet Series™RapidConfigure™

Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®

STEALTH™SuperFET®

SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®

SyncFET™

Sync-Lock™®*

TinyBoost®TinyBuck®

TinyCalc™TinyLogic®

TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*SerDes™

UHC®

Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™

®

™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.

ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support.Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

Rev. I66

tm

®

FQD

8P10 / FQU

8P10 — P-C

hannel QFET

® MO

SFET

Documents

FQD8P10 / FQU8P10 - Farnell · 2015. 12. 10. · FQD8P10 / FQU8P10 — P-Channel QFET ® MOSFET ©2010 Fairchild Semiconductor Corporation FQD8P10 / FQU8P10 Rev. C2 3 !ˆ˜ ˚ ˜˘