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Equipment to Supply Pure Ozone Gas (≒100%) Continuously
Specifications in this catalog are subject to change without notice. MB64-3059B As of Jul., 20142014-7ME(1.5L)0.5L
ThinkPark Tower, 2-1-1, Osaki, Shinagawa-ku, Tokyo, 141-6029 Japan
www.meidensha.co.jp
Applications/ Notifications(for the Domestic Use in Japan)
By Establishment of this Equipment, you need to submit applications/ notifications to the Prefecture. We support by creating the forms.・High Pressure Gas Production Notification ・High Pressure Gas Production Facilities Change Notification・Class 2 Storage Place Establishment Notification ・Class 2 Storage Place Position Change Notification
This Equipment is developed by AIST (National Institute of Advanced Industrial Science and Technology) and Meidensha.
Pure Ozone GeneratorHigh Purity Ozone Gas GeneratorApplication
Field Application Technology Expected Effect
Environment Water Treatment Pure Ozone Treatment Method Sterilization, Deodorization, Decolorization
Medicine Medical Equipment Pure Ozone Treatment Method Sterilization, Pharmacy (Organic Synthesis)
Film
FPD
Gas Adding Treatment Method
Surface Reforming/ Coating of Films for Touch Panel
Semiconductor Packaging Surface Reforming/ Coating of Films for FPC
Food Industry Surface Reforming of Packing Material
Battery Surface Reforming of Film for Solar Cell
Material Elements Pure Ozone Treatment Method Reforming of Carbon NanotubeOxidization of Spherical Silicone
Battery Electrode Gas Adding Treatment Method Electrode Reforming
Semiconductor
Deposition
Pure Ozone Treatment MethodUV Excitation Ozone CVD Treatment MethodGas Adding Treatment Method
Oxidize, CVD, Insulator Film Reforming, Ashing, Dry Cleaning
Lithography Photomask Reforming, Precision Components Cleaning, EUVL
Advanced Technology
MEMS
Pure Ozone Treatment Method, Gas Adding Treatment Method
Ashing, Dry Cleaning
Nanoimprint Stamper Dry Cleaning
Micromachining High-Temperature Superconductive Film, MBE
Printed Electronics Surface Reforming/ Coating before/ After Printing Process
Example
Stamper Cleaning by Nanoimprinting (Gas Adding Treatment Method)
Removal of the Resist from Stamper
Film Surface Reforming (Gas Adding Treatment Method)
Example) Estimated Material: Organic Film
Stamper Resist Adhesion
Heat Process
(Condition: Room Temperature, 5 min.)
Mold Heating/ Pressurizing
Cooling/ Mold Release
Before After
Removal ofthe Resist
ThermoplasticResin
Gas Adding Treatment Method(Ultra Dry Cleaning Method)
Organic FilmWettability
Improvement
Surface Reformed Layer
Before After
Enough Wettability and Durability after a Month
Gas Adding Treatment Method(Ultra Dry Cleaning Method)
UV LightSiliconeSourceGas Si
Pure Ozone(O3)
Heat(200℃~300℃)
Further LowerTemperature
Difficult to decompose
TEOSHMDSTMS
Si SiO2
Pure Ozone Treatment Method
The method to spray pure ozone gas (with strong oxidizing power) on the object directly : Effective for:1. Speedy oxidization of semiconductor chips at low temperature. 2. As a resource of the oxidizing gas for high-spec deposition
equipment like Molecular Beam Epitaxy.
UV Excitation Ozone CVD Treatment Method
The method to activate reaction with ozone irradiated by UV light: Effective for:1. Formation of high quality film with less damage (lowering
temperature less than 300℃ )
Gas Adding Treatment Method
The method to add reaction-accelerating gas (e.g., Ethylene) to ozone : Effective for:1. Removing organic materials at room temperature (Ultra Dry Cleaning Method) 2. Surface reforming (Dry Ozone Reforming Method).
Features
3 Technologies to Apply the Pure Ozone Gas Safely and Stably.
SiSi
SiO2
Pure Ozone(O3)
ResistObject (ex: Wafer Substrate)
CO2 H2O CO2 H2O
Removal of the Resists
Pure Ozone(O3)
Ethylene(C2H4)
O Radical, H Radical, OH Radical etc.
Continuous Ozone Supply (without Heavy Metal and Impurities)
Chiller Chiller Chiller
100% Liquid Ozone
Pure Ozone Gas
Vacuum Exhaust
Oxygen-OzoneMixed Gas
OPEN
CLOSE
CLOSE
Feed Standby Charge
CLOSE
CLOSE
CLOSE OPEN
OPEN
CLOSE
Safety Measurement
Design Concept:
Always keep the system safe by operating under the condition of high purity and low pressure.
Safe Design
Explosion-proof DesignTemperature / pressure control with the fail safe system by power failure / trouble.
Standards Certification
The unit is conformed to international standards: SEMI-S2, UL, NFPA, CE etc.
Quality Assurance
Safety against gas leakage is verified by tracer gas test of a third-party certifier.
Type Batch Type Continuous Supply TypeContinuous Supply Type (Auto Flushing Function
Available)
Unit Configuration
Rating
Number of Ozone Chamber
Main 1 2 3
For Standby 0 0 1
Store PartStandard Ozone Gas Value*1 (cc)/ Chamber 7,300/ Chamber 15,000/ Chamber 15,000/ Chamber
Liquid Ozone Purity [%] ≒ 100 ≒ 100 ≒ 100
Supply PartContinuous Supply Rate [sccm] 20 100 100
Ozone Gas Purity Rate (%) More than 92 More than 92 More than 92
Continuous Supply Time Max. 6h Continuous Supply Continuous Supply
National Safety Standards: SEMI-S2, UL, NFPA, CE Conformable Conformable Conformable
Main Function
Safety Control
Negative Pressure Control*2 Available Available Available
Shutdown Function by Power Failure/ Earthquake*3 Available Available Available
Auto Flushing Function*4
Out of Unit Operation Available Available Available
In Unit Operation*5 N/A N/A Available
*1 : Standard Ozone Gas Values are the capacity/ flow rate values at the 0℃ , 1 atm. *2 : This function checks the negative pressure and controls not to leak ozone out of board. *3 : This Function detects the power failure/ the earthquake (100-200 GAL) and stops the whole unit automatically. *4 : This function automatically flushes within the auto-mode accumulated impurities in the ozone chambers.*5 : The unit can always be on-standby with flushing an idle chamber automatically.
Specification External View (Measurement without Protrusion) [unit: mm]
WEIGHT: 650kg
CAB POGB
Weight: See the Table
2000
2000
900 D
600
Chiller
WEIGHT: 140kg
686
750
510
W
Top
FrontPOGB
Number of the Chamber 1 2 3
W[mm] 220 580 760
D[mm] 600 840 840
WEIGHT[kg] 350 450 500
Utility (Including Unit Construction)
Electrical System
Air System
Water System
Voltage:3φAC210 (±10%)Frequency: 50/60HzCapacity: About 20kVA
High purity Oxygen (for Ozone Generation)Purity: 4N (More than 99.99%)Pressure: 0.5~0.9 MPa (G)Flow Rate: 3~5 L/min
High purity Nitrogen (for Addition)Purity: 4N (More than 99.99%)Pressure: 0.5~0.9 MPa (G)Flow Rate: 10~20 L/min
Nitrogen (for Emergency Purge)Purity: 4N (More than 99.99%)Pressure: 0.5~0.9 MPa (G)Flow Rate: 10~20 L/min
Coolant (Ozonizer/ Chiller)Pressure: 0.2~0.5 MPa (G)Flow Rate: 10~20 L/minTemperature: 15~28 ℃
Dry Air (for Valve Drive)Pressure: 0.5~0.9 MPa (G)Flow Rate: 10~20 L/min
CAB POGB
UPS
DC Power
Control Unit
Ozonizer
ValveSystem
OzoneDecomposer
Vacuum Pump
P
OzoneDecomposer
DC15V DC24V
DC Power
Control Unit
OzoneChamber
Cold Head
Chiller
ValveSystem
DC15V DC24V
AC210V AC210V
To Vacuum Pump/ Chiller
OxygenExhaust
High PurityOzone Gas
OxygenExhaust
Pure Ozone GeneratorHigh Purity Ozone Gas Generating Equipment
High Purity Ozone gas has rich potential for cleaning / reforming / film depositing of various objects.
Continuous supply of ozone gas is available by connecting several ozone chambers in parallel.