FGH80N60FD.pdf

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2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH80N60FD Rev. C2

FGH80N60FD

600VFieldStopIGBT

November 2013

Absolute Maximum Ratings

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol Description Ratings Unit

VCES Collector-Emitter Voltage 600 V

VGES Gate-Emitter Voltage 20 V

ICCollector Current @ TC= 25C 80 A

Collector Current @ TC= 100C 40 A

ICM (1) Pulsed Collector Current @ TC= 25C 160 A

PDMaximum Power Dissipation @ TC= 25C 290 W

Maximum Power Dissipation @ TC= 100C 116 W

TJ Operating Junction Temperature -55 to +150 C

Tstg Storage Temperature Range -55 to +150 C

TLMaximum Lead Temp. for solderingPurposes, 1/8 from case for 5 seconds

300 C

Symbol Parameter Typ. Max. Unit

RJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.43 C/W

RJC(Diode) Thermal Resistance, Junction-to-Case 1.5 C/W

RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W

G

C

E

EC

G

COLLECTOR(FLANGE)

FGH80N60FD600 V Field Stop IGBT

Features

High Current Capability

Low Saturation Voltage: VCE(sat) = 1.8 V @ IC= 40 A

High Input Impedance

Fast Switching

RoHS Complaint

Appl icat ions

Induction Heating, PFC, Telecom, ESS

General Descript ion

Using novel field stop IGBT technology, Fairchild's field stop

IGBTs offer the optimum performance for induction heating,

telecom, ESS and PFC applications where low conduction and

switching losses are essential.

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FGH80N60FD Rev. C2

FGH80N60FD600VFieldStopIGBT

Package Marking and Ordering Information

Electrical Characteristics of the IGBT TC= 25C unless otherwise noted

Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity

FGH80N60FDTU FGH80N60FD TO-247 Tube N/A N/A 30

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

BVCES Collector-Emitter Breakdown Voltage VGE= 0 V, IC= 250 uA 600 -- -- V

BVCES /

TJ

Temperature Coefficient of Breakdown

Voltage

VGE= 0 V, IC= 250 uA-- 0.6 -- V/C

ICES Collector Cut-Off Current VCE= VCES, VGE= 0 V -- -- 250 uA

IGES G-E Leakage Current VGE= VGES, VCE= 0 V -- -- 400 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC= 250 uA, VCE= VGE 4.5 5.5 7.0 V

VCE(sat) Collector to Emitter

Saturation Voltage

IC = 40 A, VGE= 15 V -- 1.8 2.4 V

IC = 40 A, VGE= 15 V,

TC= 125C-- 2.05 -- V

Dynamic Characteristics

Cies Input Capacitance

VCE = 30 V, VGE= 0 V,

f = 1 MHz

-- 2110 -- pF

Coes Output Capacitance -- 200 -- pF

Cres Reverse Transfer Capacitance -- 60 -- pF

Switching Characteristics

td(on) Turn-On Delay Time

VCC= 400 V, IC= 40 A,

RG= 10 , VGE = 15 V,

Inductive Load, TC = 25C

-- 21 -- ns

tr Rise Time -- 56 -- ns

td(off) Turn-Off Delay Time -- 126 -- ns

tf Fall Time -- 50 100 ns

Eon Turn-On Switching Loss -- 1 1.5 mJ

Eoff Turn-Off Switching Loss -- 0.52 0.78 mJ

Ets Total Switching Loss -- 1.52 2.28 mJ

td(on) Turn-On Delay Time

VCC= 400 V, IC= 40 A,

RG= 10 , VGE = 15 V,Inductive Load, TC = 125C

-- 20 -- ns

tr Rise Time -- 54 -- ns

td(off) Turn-Off Delay Time -- 131 -- ns

tf Fall Time -- 70 -- ns

Eon Turn-On Switching Loss -- 1.1 -- mJ

Eoff Turn-Off Switching Loss -- 0.78 -- mJ

Ets Total Switching Loss -- 1.88 -- mJ

Qg Total Gate Charge

VCE= 400 V, IC= 40 A,

VGE= 15 V

-- 120 -- nC

Qge Gate-Emitter Charge -- 14 -- nC

Qgc Gate-Collector Charge -- 58 -- nC

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FGH80N60FD Rev. C2


Electrical Characteristics of the Diode TC= 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Unit

VFM Diode Forward Voltage IF= 20 ATC= 25C - 2.3 2.8 V

TC= 125C - 1.7 -

trr Diode Reverse Recovery Time

IF=20 A,

diF/ dt = 200 A/s

TC= 25C - 36 - nsTC= 125C - 105 -

Irr Diode Reverse Recovery CurrentTC= 25C - 2.6 - ATC= 125C - 7.8 -

Qrr Diode Reverse Recovery ChargeTC= 25C - 46.8 - nCTC= 125C - 409 -

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Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Saturation VoltageCharacteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics Characteritics

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VgeTemperature at Variant Current Level

0 2 4 6 8 100

40

80

120

160

20V

TC= 25oC

12V

15V

10V

VGE= 8VCollectorCurrent,IC[A]

Collector-Emitter Voltage, VCE[V]

0 2 4 6 8 100

40

80

120

160

20V

TC= 125oC

12V

15V

10V

VGE= 8VCollectorCurrent,IC[A]


25 50 75 100 1251.0

1.5

2.0

2.5

3.0

3.5

80A

40A

20A

Common Emitter

VGE= 15V

Collector-EmitterVoltage,V

CE

[V]

Case Temperature, TC[oC]

4 8 12 16 200

4

8

12

16

20

IC= 20A

40A

80A

Common Emitter

TC

= 25oC

Collector-EmitterVoltage,

VCE[V]

Gate-Emitter Voltage, VGE[V]

0 1 2 3 4 5 60

40

80

120

160

Common Emitter

VGE= 15V

TC= 25oC

TC= 125oC

CollectorC

urrent,IC[A]


2 4 6 8 10 120

40

80

120

160Common Emitter

VCE= 20V

TC= 25oC

TC= 125oC

CollectorCurrent,IC[A]

Gate-Emitter Voltage,VGE[V]

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Typical Performance Characterist ics (Continued)

Figure 7. Saturation Voltage vs. Vge Figure 8. Capacitance Characteristics

Figure 9. Gate Charge Characteristics Figure 10. SOA Characteerist ics

Figure 11. Turn-Off Switching SOA Figure 12. Turn-On Characteristi cs vs. Characteristics Gate Resistance

4 8 12 16 20

0

4

8

12

16

20

IC= 20A

40A

80A

Common Emitter

TC= 125oC

Collector-EmitterVoltage,

VCE

V

Gate-Emitter Voltage, VGE[V]0.1 1 10

0

1000

2000

3000

4000

5000Common Emitter

VGE= 0V, f = 1MHz

TC= 25oC

Crss

Coss

Ciss

Capacitance[pF]

Collector-Emitter Voltage, VCE[V]30

1 10 100 10000.01

0.1

1

10

100

1ms

10 ms

DCSingle Nonrepetitive

Pulse TC= 25oC

Curves must be derated

linearly with increase

in temperature

10s

100s

CollectorCurrent,Ic[A]


400

0 50 100 1500

3

6

9

12

15Common Emitter

TC= 25oC

300V200V

Vcc

= 100V

Gate-E

mitterVoltage,

VGE

[V]

Gate Charge, Qg[nC]

0 10 20 30 40 50

10

100

200

Common Emitter

VCC= 400V, VGE= 15V

IC= 40A

TC= 25oC

TC= 125oC

td(on)

tr

SwitchingTime[ns]

Gate Resistance, RG

51 10 100 1000

1

10

100

Safe Operating Area

VGE

= 20V, TC= 100

oC

CollectorCurrent,IC[A]


200

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Figure 13. Turn-Off Characteristi cs vs. Figure 14. Turn-On Characteristi cs vs.Gate Resistance Collector Current

Figure 15. Turn-Off Characteristics vs. Figure 16. Switching Loss vs Gate Resistance Collector Current

Figure 17. Switching Loss vs Collector Current

0 10 20 30 40 5010

100

1000

Common Emitter

VCC= 400V, VGE= 15V

IC= 40A

TC= 25oC

TC= 125oC

td(off)

tf

SwitchingTime[ns]

Gate Resistance, RG[ ]

2000

20 40 60 8010

100

Common Emitter

VGE= 15V, RG= 10

TC= 25

oC

TC= 125

oC

tr

td(on)

SwitchingTime[ns]

Collector Current, IC[A]

200

20 40 60 80

100

500Common Emitter

VGE= 15V, RG= 10

TC= 25

oC

TC= 125

oC

td(off)

tf

SwitchingTime[ns]


200 10 20 30 40 50

1

0.3

Common Emitter

VCC

= 400V, VGE

= 15V

IC= 40A

TC= 25

oC

TC= 125

oC E

on

Eoff

SwitchingLo

ss[mJ]

Gate Resistance, RG[ ]

5

20 40 60 80

0.1

1

10Common Emitter

VGE

= 15V, RG

= 10

TC= 25

oC

TC= 125

oC

Eon

Eoff

SwitchingLoss[mJ]


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Figure 18. Transient Thermal Impedance of IGBT

Figure 19. Forward Characteristi cs Figure 20. Stored Charge

Figure 21. Reverse Recovery Time Figure 22. Reverse Recovery Current

0 1 2 3 40.1

1

10

100

TC= 75oC

TC= 25oC

TC= 125oC

Forward Voltage , VF[V]

ForwardCurrent,

IF[A]

100 200 300 4000

100

200

300

400

500

600

125oC

25oC

StoredRecoveryCharge,

Qrr

[nC]

di/dt ,[A/s]

100 200 300 40020

40

60

80

100

120

140

125oC

25oC

ReverseRecoveryTim

e,

trr

[ns]

di/dt, [A/

s]

5 100 200 300 4000

5

10

15

20

125oC

25oC

ReverseRecoveryCurrent,Irr

[A]

di/dt, [A/

s]

5

1E-5 1E-4 1E-3 0.01 0.1 11E-3

0.01

0.1

1

0.2

0.5

0.1

0.05

0.010.02

single pulse

ThermalResponse[Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak Tj= Pdm x Zthjc + TC

t1

PDM

t2

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Mechanical Dimensions

Figure 23. TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION AB

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner

without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or

obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specif-

ically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-003

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FGH80N60FD Rev. C2

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FGH80N60FD.pdf