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November 1998

FDS6875

Dual P-Channel 2.5V Specified PowerTrenchTMMOSFET

General Description Features

Absolute Maximum Ratings TA= 25

oC unless otherwise noted

Symbol Parameter FDS6875 Units

VDSS

Drain-Source Voltage -20 V

VGSS

Gate-Source Voltage 8 V

ID

Drain Current - Continuous (Note 1a) -6 A

- Pulsed -20

PD

Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a) 1.6

(Note 1b) 1

(Note 1c) 0.9

TJ,T

STGOperating and Storage Temperature Range -55 to 150 C

THERMAL CHARACTERISTICS

RJA

Thermal Resistance, Junction-to-Ambient (Note 1a) 78 C/W

RJC

Thermal Resistance, Junction-to-Case (Note 1) 40 C/W

FDS6875 Rev.C

-6 A, -20 V. RDS(ON)

= 0.030 @ VGS

= -4.5 V,

RDS(ON)

= 0.040 @ VGS

= -2.5 V.

Low gate charge (23nC typical).

High performance trench technology for extremely low

RDS(ON)

.

High power and current handling capability.

SOT-23 SuperSOTTM

-8 SOIC-16SO-8 SOT-223SuperSOTTM

-6

These P-Channel 2.5V specified MOSFETs are

produced using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored to

minimize the on-state resistance and yet maintain low gate

charge for superior switching performance.

These devices are well suited for portable electronics

applications: load switching and power management,

battery charging and protection circuits.

S1

D1

S2G1

SO-8

D2D2

D1

G2

FDS

6875

pin 11

5

7

8

2

3

4

6

1998 Fairchild Semiconductor Corporation

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Electrical Characteristics (TA= 25 OC unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS

Drain-Source Breakdown Voltage VGS

= 0 V, ID= -250 A -20 V

BVDSS

/TJ

Breakdown Voltage Temp. Coefficient ID= -250 A, Referenced to 25

oC -21 mV/

oC

IDSS Zero Gate Voltage Drain Current VDS= -16 V, VGS= 0 V -1 A

TJ = 55C -10 A

IGSSF

Gate - Body Leakage, Forward VGS

= 8 V, VDS

= 0 V 100 nA

IGSSR

Gate - Body Leakage, Reverse VGS

= -8 V, VDS

= 0 V -100 nA

ON CHARACTERISTICS (Note 2)

VGS(th)

Gate Threshold Voltage VDS

= VGS

, ID= -250 A -0.4 -0.8 -1.5 V

VGS(th)

/TJ

Gate Threshold Voltage Temp. Coefficient ID= 250 A, Referenced to 25

oC 2.8 mV/

oC

RDS(ON)

Static Drain-Source On-Resistance VGS

= -4.5 V, ID= -6 A 0.024 0.03

TJ

=125C 0.033 0.048

VGS

= -2.5 V, ID= -5.3 A 0.032 0.04

ID(ON)

On-State Drain Current VGS

= -4.5 V, VDS

= -5 V -20 A

gFS Forward Transconductance VDS= -4.5 V, ID= -6 A 22 S

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance VDS

= -10 V, VGS

= 0 V,

f = 1.0 MHz

2250 pF

Coss

Output Capacitance 500 pF

Crss

Reverse Transfer Capacitance 200 pF

SWITCHING CHARACTERISTICS (Note 2)

tD(on)

Turn - On Delay Time VDS

= -10 V, ID= -1 A 8 16 ns

tr

Turn - On Rise Time VGEN

= -4.5 V, RGEN

= 6 15 27 ns

tD(off)

Turn - Off Delay Time 98 135 ns

tf

Turn - Off Fall Time 35 55 ns

Qg

Total Gate Charge VDS

= -10 V, ID= -6 A, 23 31 nC

Qgs Gate-Source Charge VGS= -5 V 3.9 nCQ

gdGate-Drain Charge 5.5 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current -1.3 A

VSD

Drain-Source Diode Forward Voltage VGS

= 0 V, IS= -1.3 A (Note 2) -0.7 -1.2 V

Notes:

1. RJA

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC

is guaranteed bydesign while R

CAis determined by the user's board design.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.

FDS6875 Rev.C

c. 135OC/W on a 0.003 in

2

pad of 2oz copper.b. 125

OC/W on a 0.02 in

2

pad of 2oz copper.

a. 78OC/W on a 0.5 in

2

pad of 2oz copper.

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FDS6875 Rev.C

Typical Electrical Characteristics

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation withDain Current and Gate Voltage.

Figure 3. On-Resistance Variation with Temperature.

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

Figure 4. On-Resistance Variation withGate-to-Source Voltage.

0 0.6 1.2 1.8 2.4 30

5

10

15

20

- V , DRAIN-SOURCE VOLTAGE (V)

-I,DRAIN-SOURCE

CURRENT(A)

DS

D

-2.0V

-2.5V-3.0V

V = -4.5VGS

0 4 8 12 16 200.5

1

1.5

2

2.5

- I , DRAIN CURRENT (A)

DRAIN-SOURCEON-R

ESISTANCE

D

V = -2.0VGS

R

,NORMA

LIZED

DS(ON)

-4.5V

-2.5 V

-3.5 V-3.0 V

1 2 3 4 50

0.02

0.04

0.06

0.08

0.1

- V , GATE TO SOURCE VOLTAGE (V)GS

R

,ON-RESISTANCE(OHM)

DS(ON)

25C

T = 125CA

I = -3.0AD

0.5 1 1.5 2 2.50

5

10

15

20

- V , GATE TO SOURCE VOLTAGE (V)

-I,DRAINCURRENT(A)

V = -5.0VDS

GS

D

T = -55CJ

125 C

25C

0 0.3 0.6 0.9 1.2

0.001

0.01

0.1

1

5

20

- V , BODY DIODE FORWARD VOLTAGE (V)

-I,REVERSEDRAINCURRENT(A)

25 C

-55 C

V = 0 VGS

SD

S

T = 1 25 CJ

-50 -25 0 25 50 75 100 125 1500.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (C)

DRAIN-SOURCEON-RESISTANCE

J

R

,NORMALIZED

DS(ON)

V = -4.5VGS

I = -6AD

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FDS6875 Rev.C

Typical Electrical Characteristics(continued)

Figure 10. Single Pulse Maximum PowerDissipation.

Figure 8. Capacitance Characteristics.Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Figure 11. Transient Thermal Response Curve.Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

0 5 10 15 20 250

1

2

3

4

5

Q , GATE CHARGE (nC)

-V

,GATE-SOURCEV

OLTAGE(V)

g

GS

I = -6AD

V = -5VDS-10V

-15V

0.1 0.2 0.5 1 2 5 10 20100

200

500

1000

2000

4000

- V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE

(pF)

DS

Ciss

f = 1 MHz

V = 0 VGS

Coss

Crss

0.1 0.3 1 2 5 10 300.01

0.05

0.5

3

10

30

- V , DRAIN-SOURCE VOLTAGE (V)

-I,DRAINCURRENT(A) RD

S(ON)

LIMIT

D

DC

DS

1s

100ms

10ms

1ms

10s

V = -4.5V

SINGLE PULSE

R = 135C/W

T = 2 5 CJA

GS

A

100us

0.01 0.1 0.5 10 50 100 3000

5

10

15

20

25

30

SINGLE PULSE TIME (SEC)

POWER(W)

SINGLE PULSE

R =135C/W

T = 25CJA

A

0.0001 0.001 0.01 0.1 1 10 100 3000.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

T

RANSIENTTHERMALRESISTANCE

r(t),NORMALIZEDEFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Duty Cycle, D = t /t1 2

R (t) = r(t) * RR = 135C/W

JAJA

JA

T - T = P * R (t)JAAJ

P(pk)

t1t 2

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TRADEMARKS

ACExCoolFET

CROSSVOLTE2CMOSTM

FACT

FACT Quiet Series

FAST

FASTr

GTOHiSeC

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:

1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.

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