© 2

FAN

7371 — H

igh-Current H

igh-Side Gate D

rive IC

FAN

October 2007

FAN7371High-Current High-Side Gate Drive ICFeatures

Floating Channel for Bootstrap Operation to +600V4A/4A Sourcing/Sinking Current Driving CapabilityCommon-Mode dv/dt Noise Canceling Circuit3.3V and 5V Input Logic CompatibleOutput In-phase with Input SignalUnder- Voltage Lockout for VBS25V Shunt Regulator on VDD and VBS8-Lead Small Outline Package (SOP)

ApplicationsHigh-Speed Gate Driver Sustain Switch Driver in PDP ApplicationEnergy-Recovery Circuit Switch Driver in PDP ApplicationHigh-Power Buck ConverterMotor Drive Inverter

Description The FAN7371 is a monolithic high-side gate drive IC,which can drive high-speed MOSFETs and IGBTs thatoperate up to +600V. It has a buffered output stage withall NMOS transistors designed for high pulse currentdriving capability and minimum cross-conduction.

Fairchild’s high-voltage process and common-modenoise canceling techniques provide stable operation ofthe high-side driver under high dv/dt noise circum-stances. An advanced level-shift circuit offers high-sidegate driver operation up to VS=-9.8V (typical) forVBS=15V.

The UVLO circuit prevents malfunction when VBS islower than the specified threshold voltage.

The high-current and low-output voltage drop featuremakes this device suitable for sustain and energyrecovery circuit switches driver in the Plasma DisplayPanel application, motor drive inverter, switching powersupply, and high-power DC-DC converter applications.

Ordering Information

Note:1 These devices passed wave soldering test by JESD22A-111.

8-SOP

Part Number Package Pb-Free Operating Temperature Range Packing MethodFAN7371M

8-SOP Yes -40°C ~ 125°CTUBE

FAN7371MX TAPE & REEL

007 Fairchild Semiconductor Corporation www.fairchildsemi.com7371 Rev. 1.0.1

FAN

7371 — H

igh-Current H

igh-Side Gate D

rive IC

© 2FAN

Typical Application Diagrams

Figure 1. Floated Bidirectional Switch and Half-Bridge Driver: PDP application

Figure 2. Step-Down (Buck) DC-DC Converter Application

Energy Recovery Circuit Part Sustain Drive Part

DBOOT1

D2

C2

IN1

To PannelDBOOT2

CBOOT1

Q1

D1

D3

D4

L1

IN2

15V

Q2

RBOOT1

CBOOT2

VS DBOOT3

IN3Q3

RBOOT3

CBOOT3

15V

IN4Q4

R1

R2

R5

R6C1 C3R8

R7

R4

R3

FAN7371

VB

IN

GND

HO

VS

NC

1

2

NC

VDD

7

5

6

8

3

4

FAN7371

VB

IN

GND

HO

VS

NC

1

2

NC

VDD

7

5

6

8

3

4

FAN7371

VB

IN

GND

HO

VS

NC

1

2

NC

VDD

7

5

6

8

3

4

FAN7371

VB

IN

GND

HO

VS

NC

1

2

NC

VDD

7

5

6

8

3

4

FAN7371 Rev.03

DBOOT

C2

PWMCBOOT

C1

D1

L1

15V

RBOOT

R2

FAN7371

VB

IN

GND

HO

VS

NC

NC

VDD

7

5

6

8

2

4

3

1

R1

VIN

VOUT

FAN7371 Rev.01

007 Fairchild Semiconductor Corporation www.fairchildsemi.com7371 Rev. 1.0.1 2

FAN

7371 — H

igh-Current H

igh-Side Gate D

rive IC

© 2FAN

Internal Block Diagram

Figure 3. Functional Block Diagram

Pin Configuration

Figure 4. Pin Configuration (Top View)

Pin DefinitionsPin # Name Description

1 VDD Supply Voltage

2 IN Logic Input for High-Side Gate Driver Output

3 NC No Connection

4 GND Ground

5 NC No Connection

6 VS High-Voltage Floating Supply Return

7 HO High-Side Driver Output

8 VB High-Side Floating Supply

UVLO

PULSE

GEN

ERA

TOR

VDD

GND

IN

VB

HO

VS

RR

S Q

6

7

81

4

2 NOISECANCELLER

Pins 3 and 5 are no connection.

25V

FAN7371 Rev.04

25V110K

VDD

Shoo

t-thr

ough

cur

rent

co

mpe

nsat

ed g

ate

driv

erVS

VB

FAN7371

VDD

NC

IN HO

NC4GND

3

2

1

5

6

7

8

FAN7371 Rev.01

007 Fairchild Semiconductor Corporation www.fairchildsemi.com7371 Rev. 1.0.1 3

FAN

7371 — H

igh-Current H

igh-Side Gate D

rive IC

© 2FAN

Absolute Maximum RatingsStresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. Theabsolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified.

Notes: 2 This IC contains a shunt regulator on VDD and VBS with a normal breakdown voltage of 25V. Please note that this

supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in theElectrical Characteristics section

3 Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material).4 Refer to the following standards:

JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, andJESD51-3: Low effective thermal conductivity test board for leaded surface mount packages.

5 Do not exceed power dissipation (PD) under any circumstances.

Recommended Operating ConditionsThe Recommended Operating Conditions table defines the conditions for actual device operation. Recommendedoperating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does notrecommend exceeding them or designing to absolute maximum ratings.

Symbol Characteristics Min. Max. UnitVS High-Side Floating Offset Voltage VB-VSHUNT VB+0.3 V

VB High-Side Floating Supply Voltage(2) -0.3 625.0 V

VHO High-Side Floating Output Voltage VS-0.3 VB+0.3 V

VDD Low-Side and Logic Supply Voltage(2) -0.3 VSHUNT V

VIN Logic Input Voltage -0.3 VDD+0.3 V

dVS/dt Allowable Offset Voltage Slew Rate ± 50 V/ns

PD Power Dissipation(3, 4, 5) 0.625 W

θJA Thermal Resistance 200 °C/W

TJMAX Maximum Junction Temperature 150 °C

TSTG Storage Temperature -55 150 °C

Symbol Parameter Min. Max. UnitVB High-Side Floating Supply Voltage VS+10 VS+20 V

VS High-Side Floating Supply Offset Voltage 6-VDD 600 V

VHO High-Side Output Voltage VS VB V

VIN Logic Input Voltage GND VDD V

VDD Supply Voltage 10 20 V

TA Operating Ambient Temperature -40 125 °C

007 Fairchild Semiconductor Corporation www.fairchildsemi.com7371 Rev. 1.0.1 4

FAN

7371 — H

igh-Current H

igh-Side Gate D

rive IC

© 2FAN

Electrical Characteristics VBIAS(VDD, VBS)=15.0V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND.The VO and IO parameters are relative to VS and are applicable to the respective output HO.

Note: 6 These parameters guaranteed by design.

Dynamic Electrical Characteristics VDD=VBS=15V, GND=0V, CLOAD=1000pF, TA=25°C, unless otherwise specified.

Symbol Characteristics Test Condition Min. Typ. Max. UnitPOWER SUPPLY SECTION

IQDD Quiescent VDD Supply Current VIN=0V or 5V 25 70 μA

IPDD Operating VDD Supply Current fIN=20KHz, No Load 35 100 μA

BOOTSTRAPPED SUPPLY SECTION

VBSUV+VBS Supply Under-Voltage Positive Going Threshold Voltage

VIN=0V, VBS=Sweep 8.2 9.2 10.2 V

VBSUV-VBS Supply Under-Voltage Negative Going Threshold Voltage

VIN=0V, VBS=Sweep 7.5 8.5 9.5 V

VBSHYSVBS Supply Under-Voltage Lockout Hysteresis Voltage

VIN=0V, VBS=Sweep 0.7 V

ILK Offset Supply Leakage Current VB=VS=600V 10 μA

IQBS Quiescent VBS Supply Current VIN=0V or 5V 60 120 μA

IPBS Operating VBS Supply Current CLOAD=1000pF, fIN=20KHz, rms value 1.0 2.8 mA

SHUNT REGULATOR SECTION

VSHUNTVDD and VBS Shunt Regulator Clamping Voltage ISHUNT=5mA 24 25 V

INPUT LOGIC SectionVIH Logic “1” Input Voltage 2.5 VVIL Logic “0” Input Voltage 0.8 V

IIN+ Logic Input High Bias Current VIN=5V 45 70 μA

IIN- Logic Input Low Bias Current VIN=0V 2 μA

RIN Input Pull-down Resistance 70 110 KΩGATE DRIVER OUTPUT SECTION

VOH High-Level Output Voltage (VBIAS - VO) No Load 1.2 V

VOL Low-Level Output Voltage No Load 30 mV

IO+ Output High, Short-Circuit Pulsed Current(6) VHO=0V, VIN=5V, PW ≤10µs 3.0 4.0 A

IO- Output Low, Short-Circuit Pulsed Current(6) VHO=15V,VIN=0V, PW ≤10µs 3.0 4.0 A

VSAllowable Negative VS pin Voltage for IN Signal Propagation to HO -9.8 -7.0 V

Symbol Parameter Conditions Min. Typ. Max. Unitton Turn-on Propagation Delay Time VS=0V 150 210 ns

toff Turn-off Propagation Delay Time VS=0V 150 210 ns

tr Turn-on Rise Time 25 50 ns

tf Turn-off Fall Time 15 40 ns

007 Fairchild Semiconductor Corporation www.fairchildsemi.com7371 Rev. 1.0.1 5

FAN

7371 — H

igh-Current H

igh-Side Gate D

rive IC

© 2FAN

Typical Characteristics

Figure 5. Turn-on Propagation Delay vs. Temp. Figure 6. Turn-off Propagation Delay vs. Temp.

Figure 7. Turn-on Rise Time vs. Temp. Figure 8. Turn-off Fall Time vs. Temp.

Figure 9. Operating VDD Supply Current vs. Temp. Figure 10. Operating VBS Supply Current vs. Temp.

-40 -20 0 20 40 60 80 100 1200

50

100

150

200

250

t ON [n

s]

Temperature [°C]-40 -20 0 20 40 60 80 100 1200

50

100

150

200

250

t OFF

[ns]

Temperature [°C]

-40 -20 0 20 40 60 80 100 1200

10

20

30

40

50

t R [n

s]

Temperature [°C]-40 -20 0 20 40 60 80 100 1200

10

20

30

40

50

t F [n

s]

Temperature [°C]

-40 -20 0 20 40 60 80 100 1200

20

40

60

80

100

I PD

D [μ

A]

Temperature [°C]-40 -20 0 20 40 60 80 100 120

0.0

0.5

1.0

1.5

2.0

I PBS

[mA]

Temperature [°C]

007 Fairchild Semiconductor Corporation www.fairchildsemi.com7371 Rev. 1.0.1 6

FAN

7371 — H

igh-Current H

igh-Side Gate D

rive IC

© 2FAN

Typical Characteristics (Continued)

Figure 11. VBS UVLO+ vs. Temp. Figure 12. VBS UVLO- vs. Temp.

Figure 13. Logic High Input Voltage vs. Temp. Figure 14. Logic Low Input Voltage vs. Temp.

Figure 15. Input Pull-down Resistance vs. Temp. Figure 16. High-Level Output Voltage vs. Temp.

-40 -20 0 20 40 60 80 100 1208.0

8.5

9.0

9.5

10.0

VBS

UV

+ [V]

Temperature [°C]

-40 -20 0 20 40 60 80 100 1207.5

8.0

8.5

9.0

9.5

V BS

UV

- [V]

Temperature [°C]

-40 -20 0 20 40 60 80 100 1200.0

0.5

1.0

1.5

2.0

2.5

3.0

VIH

[V]

Temperature [°C]-40 -20 0 20 40 60 80 100 120

0.0

0.5

1.0

1.5

2.0

2.5

3.0

V IL

[V]

Temperature [°C]

-40 -20 0 20 40 60 80 100 1200

40

80

120

160

200

240

280

RIN

[kΩ

]

Temperature [°C]-40 -20 0 20 40 60 80 100 120

0.00

0.25

0.50

0.75

1.00

1.25

1.50

VO

H [V

]

Temperature [°C]

007 Fairchild Semiconductor Corporation www.fairchildsemi.com7371 Rev. 1.0.1 7

FAN

7371 — H

igh-Current H

igh-Side Gate D

rive IC

© 2FAN

Typical Characteristics (Continued)

Figure 17. Output High, Short-Circuit Pulsed Current vs. Temp.

Figure 18. Output Low, Short-Circuit Pulsed Current vs. Temp.

Figure 19. Output High, Short-Circuit Pulsed Current vs. Supply Voltage

Figure 20. Output Low, Short-Circuit Pulsed Current vs. Supply Voltage

Figure 21. Quiescent VDD Supply Current vs. Supply Voltage

Figure 22. Quiescent VBS Supply Current vs. Supply Voltage

-40 -20 0 20 40 60 80 100 1202.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

I O+ [A

]

Temperature [°C]-40 -20 0 20 40 60 80 100 120

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

I O- [A

]

Temperature [°C]

10 12 14 16 18 202

3

4

5

6

7

I O+ [A

]

VBS [V]

10 12 14 16 18 202

3

4

5

6

7

I O

- [A]

VBS [V]

10 12 14 16 18 200

20

40

60

80

25°C

-40°C

I QD

D [μ

A]

Supply Voltage [V]

125°C

10 12 14 16 18 200

20

40

60

80

100

120

25°C

-40°C

I QB

S [μ

A]

Supply Voltage [V]

125°C

007 Fairchild Semiconductor Corporation www.fairchildsemi.com7371 Rev. 1.0.1 8

FAN

7371 — H

igh-Current H

igh-Side Gate D

rive IC

© 2FAN

Switching Time DefinitionsTiming Diagram

Figure 23. Switching Time Test Circuit and Waveform Definitions

0.1µF

VB 15V

HO

10µF

1000pF

IN

OUT

50%

90%

50%

ton

10%

tr toff tf

10%

90%

FAN7371

(A) (B)

10nF

15V

10µFVDD

VS

GND

IN

007 Fairchild Semiconductor Corporation www.fairchildsemi.com7371 Rev. 1.0.1 9

FAN

7371 — H

igh-Current H

igh-Side Gate D

rive IC

© 2FAN

Physical Dimensions

Figure 24. 8-Lead Small Outline Package (SOP)

8°0°

SEE DETAIL A

NOTES: UNLESS OTHERWISE SPECIFIED

A) THIS PACKAGE CONFORMS TO JEDEC

MS-012, VARIATION AA, ISSUE C,

B) ALL DIMENSIONS ARE IN MILLIMETERS.

C) DIMENSIONS DO NOT INCLUDE MOLD

FLASH OR BURRS.

D) LANDPATTERN STANDARD: SOIC127P600X175-8M.

E) DRAWING FILENAME: M08AREV13

LAND PATTERN RECOMMENDATION

SEATING PLANE

0.10 C

C

GAGE PLANE

x 45°

DETAIL ASCALE: 2:1

PIN ONE

INDICATOR

4

8

1

CM B A0.25

B5

A

5.60

0.65

1.75

1.27

6.205.80

3.81

4.003.80

5.004.80

(0.33)1.27

0.510.33

0.25

0.10

1.75 MAX0.250.19

0.36

0.500.25

R0.10

R0.10

0.90

0.406 (1.04)

OPTION A - BEVEL EDGE

OPTION B - NO BEVEL EDGE

007 Fairchild Semiconductor Corporation www.fairchildsemi.com7371 Rev. 1.0.1 10

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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As used herein:

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.

Rev. I31

FAN

7371 — H

igh-Current H

igh-Side Gate D

rive IC

© 2007 Fairchild Semiconductor Corporation www.fairchildsemi.comFAN7371 Rev. 1.0.1 11