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Fab – Step 3 Dry etch thermal oxide from the front of the wafer Top view Side view Si substrate SiO2 – 2 um Si confidential
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Fab - Step 1Take SOI Wafer
Top view
Side viewSi substrate
SiO2 – 2 um
Si
confidential
Fab – Step 2Grow thermal oxide
Top view
Side viewSi substrate
SiO2 – 2 um
Si
confidential
Fab – Step 3Dry etch thermal oxide from the front of the wafer
Top view
Side viewSi substrate
SiO2 – 2 um
Si
confidential
Fab – Step 4Deposit AlN
Top view
Side view
AlN
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 5Etch AlN to define the structure – Mask 1
Top view
Side view
AlN
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 6Deposit Pt
Top view
Side view
Pt
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 7Etch Pt – Mask 2
Top view
Side view
+ Q
- Q
+/- Q
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 8Etch Si to define the structure – Mask 3
Top view
Side view
+ Q
- Q
+/- Q
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 9Etch buried oxide to define the structure – Mask 3
Top view
Side view
+ Q
- Q
+/- Q
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 10Spin coat protective photoresist and bake it
Top view
Side view
Photoresist
+ Q
- Q
+/- Q
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 11Pattern back oxide to be used as hard mask for back side etch – Mask 4
Top view
Side view
+ Q
- Q
+/- Q
Photoresist
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 12Back side etch of Si – Mask 4
Top view
Side view
+ Q
- Q
+/- Q
Photoresist
Si substrate
SiO2 – 2 um
Si
confidential
Fab – Step 13Strip photoresist
Top view
Side view
+ Q
- Q
+/- Q
Anchor Si substrate
SiO2 – 2 um
Si
confidential
![Disclaimer - Seoul National Universitys-space.snu.ac.kr/bitstream/10371/142431/1/000000150260.pdf증착하여측정했는데, 그결과는다음과같다.[그림5] 그림5. Si/SiO2/Pt,](https://img.dokumen.tips/doc/110x75/5e3dcab0ff44ec28c376c419/disclaimer-seoul-national-universitys-spacesnuackrbitstream103711424311.jpg)
