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1 Expanded Modes, Expanded Modes, Bus, External Bus, External Memory Memory Today: First Hour: Expanded Modes, Bus, Timing Section 4.1-4.7.2 of Huang’s Textbook In-class Activity #1 Second Hour: Interfacing external memory to 6811 Section 4.7.3 of Huang’s Textbook In-class Activity #2

Expanded Modes, Bus, External Memory

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Expanded Modes, Bus, External Memory. Today: First Hour : Expanded Modes, Bus, Timing Section 4.1-4.7.2 of Huang’s Textbook In-class Activity #1 Second Hour : Interfacing external memory to 6811 Section 4.7.3 of Huang’s Textbook In-class Activity #2. 6811Operation Modes. - PowerPoint PPT Presentation

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Page 1: Expanded Modes, Bus, External Memory

1

Expanded Modes, Bus, Expanded Modes, Bus, External MemoryExternal Memory

Today:• First Hour: Expanded Modes, Bus, Timing

–Section 4.1-4.7.2 of Huang’s Textbook

– In-class Activity #1

• Second Hour: Interfacing external memory to 6811

• Section 4.7.3 of Huang’s Textbook

– In-class Activity #2

Page 2: Expanded Modes, Bus, External Memory

2

Single chip mode: a mode in which the 68HC11 functions without external address and data buses. • The 68HC11 has 5 I/O ports (A, B, C, D, and E) to use in this mode.

Expanded mode: a mode in which the 68HC11 has the capability to access a 64KB address space. • Port B is used as the upper address signals (A15-A8) • Port C is used as time-multiplexed address/data bus (A7/D7-A0/D0). • Only three I/O ports are available for direct use.

Choosing modes:• MODB, MODA pins (look up PRG!)• (1,0) => single chip; (1,1) => Expanded

6811Operation Modes6811Operation Modes

Page 3: Expanded Modes, Bus, External Memory

3

ROM-8KB

RAM-256 bytes

EEPROM-512 bytes

PORTA

PULSE ACCUMULATOR

PERIODIC INTERRUPT

COP WATCHDOG

PAIOC2

OC3OC4OC5

OC1

IC1

IC2IC3

PA7

PA6PA5PA4PA3PA2PA1

PA0

PE7

PE6PE5PE4

PE3

PE2

PE1PE0

PORTE

VREFH

VREFL

A/DCONVERTER

DA

TA

DIR

EC

TIO

N

PORTD

SSSCK

MOSI

MISO

SPI

TxD

RxDSCI

PD5

PD4PD3

PD2

PD1

PD0

M68HC11 CPU

ADDRESS DATA BUS

INTERRUPTS

RESET

XIRQ

IRQ(V

PPBULK) HANDSHAKE I/O

DATA DIRECTION C

PORT CPORT B

PARALLELI/O

SINGLECHIP

PB7

PB6

PB5

PB4

PB3

PB2

PB1

PB0

PC7

PC6

PC5

PC4

PC3

PC2

PC1

PC0

STRA

STRB

A15

A14

A13

A12

A11

A10

A9

A8

AD7

AD6

AD5

AD4

AD3

AD2

AD1

AD0

R/W ASEXPAND

OSCILLATOR

XTAL

EXTAL

E

MODALIR

MODB(VSTBY )

VDD

VSS

MODESELECT

POWER

Expanded ModeExpanded Mode

Page 4: Expanded Modes, Bus, External Memory

4

E

R/W

AS

AD7-AD0

68HC11

PC7-PC0

A15-A8PB7-PB0

MODB

MODA

Bus

Expanded ModeExpanded Mode

1

1

Other pins not shown

Page 5: Expanded Modes, Bus, External Memory

5

A real signal has nonzero rise and fall times

90% VDD

10% VDD

1

0

trise tfall

Timing Conventions RecapTiming Conventions Recap

Single-signal waveform

1

0

1

0

Multiple-signal waveform

Page 6: Expanded Modes, Bus, External Memory

6

Unknown signals (when they are changing) representation

(a) Single signal

unknown

unknown

(b) multiple signals

Unknown signals

Timing Conventions RecapTiming Conventions Recap

Page 7: Expanded Modes, Bus, External Memory

7

A floating signal is represented by a level half way between logic high and low.

Signalfloating

(a) Single signal

Signalsfloating

(b) multiple signals

Floating signals

Timing Conventions RecapTiming Conventions Recap

Page 8: Expanded Modes, Bus, External Memory

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Crystal & E-clockCrystal & E-clock

E

XTAL

Crystal clock: 8 MHz => One cycle = 125 ns

125 ns

E clock: 2 MHz => One cycle = 500 ns

500 ns

Page 9: Expanded Modes, Bus, External Memory

9

E

R/W

A15-A8

A7/D7-A0/D0 LO-ADDR DATA

AS

XTAL

Bus Timing DiagramBus Timing Diagram

HI ADDR

• Observe that AD lines active as address only for 1/2 E cycle

• Most external memory devices need address lines active for 1E cycle

• AS line to the rescue, combined with external address latch!

Page 10: Expanded Modes, Bus, External Memory

10

CLK

OEABCDEFGH

QAQBQCQDQEQFQGQH

373

111

347813141718

256912151619

74373 Octal Transparent Latch 74373 Octal Transparent Latch with 3-State Outputswith 3-State Outputs

Stores an 8 bit number

Stores an 8 bit number

Positive edge triggeredPositive edge triggered

/OE is active LO output enable

Determines when register contents are visible at the

outputs

/OE is active LO output enable

Determines when register contents are visible at the

outputs

LE11

LE: Latch Enable. High => latch is transparent to data inputs

Page 11: Expanded Modes, Bus, External Memory

11

Latching the AddressLatching the Address

ER/W

AS

AD7-AD0

68HC11

PC7-PC0

A15-A8PB7-PB0

MODBMODA

Bus

11

Other pins not shown

D0-D7

Q0-Q7

A0-A7

373

LE

Address A0-A7

latched on the

falling edge of AS

OE0

Page 12: Expanded Modes, Bus, External Memory

12

Latching (contd)Latching (contd)

• Latching allows A7-A0 to be available for the second half of the E-clock cycle at the output of the latch

E

AS

250 ns

125 ns

A0-A7 latched at falling AS

edge

A7/D7-A0/D0 LO-ADDR DATA

Page 13: Expanded Modes, Bus, External Memory

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Do Activity #1 NowDo Activity #1 Now

Page 14: Expanded Modes, Bus, External Memory

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• Memory mapping external memory => can access external memory using normal instructions and memory addresses.• Similar to I/O memory mapping

Address space assignment- Use only unallocated memory space - Allocated in units of 2n KB (n is an integer)

Allocated space for the 68HC11A8

$0000-$00FF: SRAM$1000-$103F: I/O registers$B600-B7FF: EEPROM$E000-$FFFF: ROM

Memory MappingMemory Mapping

Page 15: Expanded Modes, Bus, External Memory

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Memory Mapping ExampleMemory Mapping Example• Consider an external 13-bit memory chip => 8KB

• Divide 64 KB space into eight 8KB blocks.

Block number Address range

01234567

$0000-$1FFF$2000-$3FFF$4000-$5FFF$6000-$7FFF$8000-$9FFF$A000-$BFFF$C000-$DFFF$E000-$FFFF

Map external memory to: $4000-$5FFF

Page 16: Expanded Modes, Bus, External Memory

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Address DecodingAddress Decoding• First four bits of memory map: 0100 or 0101

• Partial decoding: A[15-13] = 010

O0O1O2O3

O4O5O6O7

E1

E2

E3

A2

A1

A0

74LS138

Address decoder design

A15

A14

A13

External MemoryE

010

Why is E connected

to E3 ?

Page 17: Expanded Modes, Bus, External Memory

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Decoding (contd)Decoding (contd)

• 74LS138:

• E3: active high enable

=> Decoding done when E clock is high

I.e at second-half of E-clock cycle

• Goal:

• Enable (chip select) external memory with the output (O2) of decode at this time

• I.e. at second-half of E-clock cycle

E

Decoded values available

Page 18: Expanded Modes, Bus, External Memory

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• Two chip enable signals: CS1 is active lowCS2 is active high.

• WE: write enable (active low)

• OE: output enable (active low)

NC

A12A7

A6

A5A4

A3

A2

A1

A0I/O1

I/O2

I/O3V SS

V CC

WE

CS2

A8

A9A11

OE

A10

CS1

I/O8I/O7

I/O6

I/O5

I/O4

Figure 5.14 Hitachi HM6264A pin assignment

8KB SRAM HM6264A8KB SRAM HM6264A

Page 19: Expanded Modes, Bus, External Memory

19

Putting it togetherPutting it togetherA2

A1

A0

E3

E2 E1

PB7/A15

PB6/A14

PB5/A13

E

R/W

PB4/A12 - PB0/A8

AS

AD7-AD0

LE

D7-D0

O7-O0

OE

I/O8 - I/O1

WE

CS1 CS2

VDD

O2

A12-A0

OE

HM6264A

74F138

68HC11

74F373

74LS00

74LS04

Page 20: Expanded Modes, Bus, External Memory

20

E

R/W

A15-A8

A7/D7-A0/D0 LO-ADDR DATA

AS

XTAL

Revisit: Bus Timing DiagramRevisit: Bus Timing Diagram

HI ADDR

Second half of E-cycle

Page 21: Expanded Modes, Bus, External Memory

21

Putting it together (contd)Putting it together (contd)

• During second-half of E-cycle

–CS1 asserted (from O2)

–E =1 during this time => R/W’ passed to WE’

»Recall: (X.1)’ = X’ {NAND gate}

» In this case, X = (R/W’)’ {NOT gate}

– Latch output holds A0-A7

–AD0-AD7 connected to I/O lines of SRAM

»Data sent back to port C if it is a READ

»Data sent from port C if it is a WRITE

E

Second half of E-cycle

Page 22: Expanded Modes, Bus, External Memory

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Do Activity #2 NowDo Activity #2 NowDue: End of Class Today.

RETAIN THE LAST PAGE(S) (#3 onwards)!!

For Next Class:• Read Chapter 4 of Huang

• Review all material, identify your problem areas, and Bring your questions!

• Next week’s studio: Catch up with experiments. Summarize reading of Chapter 4, Chapter 5 (sections 5.1-5.4), and Chapter 6 (6.1 – 6.7)