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EUVL Challenges for Next
Generation Devices
Center for Semiconductor Research & Development
Advanced Lithography Process Technology Dept.
Tatsuhiko Higashiki
2
Contents
Device Roadmap and Lithography
Extendibility toward 1x nm hp and
beyond with New Lithography
SAxP
EUVL
EUVL+DSA
Conclusion
3
Contents
Device Roadmap and Lithography
Extendibility toward 1x nm hp and
beyond with New Lithography
SAxP
EUVL
EUVL+DSA
Conclusion
4
All information that is created, captured, replicated and/or
consumed by all human on the planet.
All information is not fully stored, but partially stored.
⇒ Need for larger-capacity memory in the future.
Rapid Increase of Information Volume Demand
40ZB
20ZB
1ZB=1,000,000,000,000,000,000,000=10^21B
5
6
STI
FG
CG
FG FG FG
STI
FG
CG
FG FG FG
STI
FG
CG
FG FG FG
Roadmap of the Memory
NAND
BiCS
Cross Point
7
Lithography Challenges
ArF im
NA>1~1.35
EUVL NA0.32→ >0.4x ?
ArF im SADP
Performance
& Economics
EUVL+SADP
Light
Source Resist, Mask,
Inspection, etc
ArF imSAQP/SAOP ?
More Moore
More
than
Moore
ML2
Tool
Defect
NIL
EUVL+DSA
NIL+DSA
hp56nm hp43nm hp32nm hp2xnm hp1xnm hp0xnm
ML2+DSA
Arf im SAQP+DSA
SADP : self-aligned double patterning
SAQP : self-aligned quadruple patterning
SAOP : self-aligned octuplet patterning
Cost
8
Contents
Device Roadmap and Lithography
Extendibility toward 1x nm hp and
beyond with New Lithography
SAxP
EUVL
EUVL+DSA
Conclusion
9
Lithography Challenges
ArF im
NA>1~1.35
EUVL NA0.32→ >0.4x ?
ArF im SADP
Performance
& Economics
EUVL+SADP
Light
Source Resist, Mask,
Inspection, etc
ArF imSAQP/SAOP ?
More Moore
More
than
Moore
ML2
Tool
Defect
NIL
EUVL+DSA
NIL+DSA
hp56nm hp43nm hp32nm hp2xnm hp1xnm hp0xnm
ML2+DSA
Arf im SAQP+DSA
SADP : self-aligned double patterning
SAQP : self-aligned quadruple patterning
SAOP : self-aligned octuplet patterning
Cost
10
Single Exposure by Mask Technology Revolution
EUVL single
Exposed
Processed
Mask (Template)
Litho.
Slimming
Film depo.
etching
etching
SADP single
11
Cycle time can not be described on CoO Single Exposure
Patterning
Patterning
DPT
Cycle time
Δ Cycle time
CoO
(¥/wf)
CoO
(¥/wf)
Ref T.Higashiki ConFab2010(June)
DPT Economical Problems Investment Cost (LP, Etching , M&I, etc.)
Mask Cost
Opportunity Cost (“Time is money”)
12
Contents
Device Roadmap and Lithography
Extendibility toward 1x nm hp and
beyond with New Lithography
SAxP
EUVL
EUVL+DSA
Conclusion
13
Lithography Challenges
ArF im
NA>1~1.35
EUVL NA0.32→ >0.4x ?
ArF im SADP
Performance
& Economics
EUVL+SADP
Light
Source Resist, Mask,
Inspection, etc
ArF imSAQP/SAOP ?
More Moore
More
than
Moore
ML2
Tool
Defect
NIL
EUVL+DSA
NIL+DSA
hp56nm hp43nm hp32nm hp2xnm hp1xnm hp0xnm
ML2+DSA
Arf im SAQP+DSA
SADP : self-aligned double patterning
SAQP : self-aligned quadruple patterning
SAOP : self-aligned octuplet patterning
Cost
14
Light Source Performance
Enough Power for Throughput>150wph Operational Cost (Mirror, E Power, DMT, etc)
Mask Defect Control DD<0.1/cm2 Inspection ・ABI(Actinic Blanks Inspection) ・PI(Pattern Inspection) ・Inspection after Pattern Repairing
Resist Performance Resolution<hp16nm,LWR<2nm,Photo
Speed<20mj/cm2,Difectivity<0.1/cm2
EUVL Challenges for NAND Memory
15 Ref , EIDEC Symposium 2013
16
EUV Collaboration
・Pattern Layout
Tech.
(OPC/DFM)
・Specification
Design for Tools
・Mask process
・Resist process
Lithography Device
&
design
Si
Process
Mask Quality Mask Inspections Resist Quality High NA Exposure EUVL+DSA
Exposure Tool EDA Resist Material Mask
Metrology and Inspection
Suppliers
Advanced EUVL
17
Structure of EUVL Mask
EUV Mask Section and Defects
Phase Defect
Reflective Multilayer
Absorber
Damage after
repairing Pattern Defect
Ref T.Higashiki ConFab2010(June)
18 Ref H.Watanabe, EIDEC Symposium 2013
19
Electron Gun
Detector: TDI Sensor
Continuous
Moving (Y) Stepping (X)
EUV Mask
EBeyeM
Projection Electron
Microscope
Electron Gun
Detector
EUV Mask
EUV Mask
EB inspection tool
20
• EUV AIMS operation will be difficult in 2012.
Quality assurance of hotspot & repaired pattern
• 3D SEM + Litho. Simulation will be applied.
3D mask image
Lithography
simulation
Prediction of
wafer image
top-down +5deg -5deg Top-down & tilted
SEM images of mask
pattern
21
Toshiba Technology Scenario for EUV Mask
HP 2Xnm HP 1Xnm
Multilayer defect
inspection
Patterned mask
inspection
Defect repair
Hotspot & repaired
pattern assurance
Particle
inspection
Actinic inspection
DUV inspection EB inspection
EB repair
Litho. Sim. w/ 3D mask
image EUV-AIMS
ready
under developing
EB inspection
DUV inspection
22
TaBO
TaBNRu
90(deg)
44nm (4x) L&S
Iino, et al. (BACUS2010)
Dry Etching Equipment : “ARESTM”
CDU of 44nm (4x) L&S : 1.7nm (3sigma)
Scanning-type Developer : “PGSD” Proximity-Gap-Suction-Development System
Scan
Mask
Deve
lopi
ng
Solu
tion
Suction
Suction
Rin
se
Rin
se
Developing Area
GapSensor
Gap
Cross-sectional view
Slit and scan type development
Narrow gap Suction slits for
removing dissolution products
Mask
Mask StagePGSD Nozzle
Scan
Extreme high uniformity of developing solution supply
Nearly zero loading effect caused by dissolution products Etched absorber pattern has capability for scaling down to hp1x EUVL single exposure.
EB writer : “EBM8000”
http://www.nuflare.co.jp/product/ebm.html
Absorber Pattern Generation
(NuFlare) (Tokyo Electron)
(Shibaura Mechatronics)
23
“SMRAT Network of Mask & Lithography”
DTF
・Cleaning Tech. ・Etching
・EB Writer ・Inspection
・Mask House
・Mask Inspections ・High Performance Resist ・Sub-10nm DSA material
・Advance Mask & Litho ・Computational Litho ・OPC/DFM ・Next Emerging Litho.
Toshiba Confidential
(EUVL Infrastructure
Development Center)
Toshiba Advanced Litho.&
Mask Dept.
Toshiba
R&D Center
24
Resolution Limit of EUVL
Depend on
Resist
Performance
25
EUVL and SADP Complementally
Spacer Film
EUVL
Spacer
hp14nm
Resist
hp28nm
28nm 14nm
Siウェハ
dTEOS加工後
Y. Watanabe et al, Photomask Japan 2010(April)
hp14nm Exposure was Realized by EUVL + SADP
26
Contents
Device Roadmap and Lithography
Extendibility toward 1x nm hp and
beyond with New Lithography
SAxP
EUVL
EUVL+DSA
Conclusion
27
Lithography Challenges
ArF im
NA>1~1.35
EUVL NA0.32→ >0.4x ?
ArF im SADP
Performance
& Economics
EUVL+SADP
Light
Source Resist, Mask,
Inspection, etc
ArF imSAQP/SAOP ?
More Moore
More
than
Moore
ML2
Tool
Defect
NIL
EUVL+DSA
NIL+DSA
hp56nm hp43nm hp32nm hp2xnm hp1xnm hp0xnm
ML2+DSA
Arf im SAQP+DSA
SADP : self-aligned double patterning
SAQP : self-aligned quadruple patterning
SAOP : self-aligned octuplet patterning
Cost
28
EUV Collaboration
・Pattern Layout
Tech.
(OPC/DFM)
・Specification
Design for Tools
・Mask process
・Resist process
Lithography Device
&
design
Si
Process
Mask Quality Mask Inspections Resist Quality High NA Exposure EUVL+DSA
Exposure Tool EDA Resist Material Mask
Metrology and Inspection
Suppliers
Advanced EUVL
29
DSA(Directed Self Assembly)
Composition
Mo
lecu
lar
We
igh
t
Change in Structure
C
han
ge in
Siz
e
Spherical Cylindrical Bicontinuos Lamella B polymer
A polymer
K. Asakawa, T. Hiraoka, Jpn. J. Appl. Phys. vol.41, 6112 (2002).
Chemical bond
DSA Molecule
Hydrophilic Hydrophobic
Micro-Phase Separated Structures of Block-copolymer
30
DSA (Directed Self Assembly)
Hydrophobic (PS)
Hydrophilic
(PMMA)
Contact Hole Line & Space
BCP: Block copolymer
31
Grapho-Epitaxy & Chemo-Epitaxy
Segalmann et al., Adv.Mater. 3,1152(2001) Nato et al., IEEE Trans. Magn.38,1949(2002) Chen et al.,Appl.Phys.Lett.81,3657(2002)
Chen et al.,Adv.Mater. 20,3155(2008) Rulz et al., Science, 321,936(2008) Tada, Macromol.41,9267(2008)
32
Guide Hole vs. DSA Hole
Guide hole DSA hole
Ave. CD 72.1nm
3sigma 7.6nm
Ave. CD 28.5nm
3sigma 1.3nm
Ref.Y.Seino, SPIE Advanced Lithography 2012 8323-33
33
Layout
Guide Data
OPC Litho Simulation
GDS
DSA Simulation
HotSpot result
OPC
Condition (material/process)
DfM FeedBack
Wafer Process FeedForward APC
Judge
Model
EDA Tool
EDA Tool
DSA OPC/DfM/APC Flow
34
Pre
dic
tion
Accura
cy
speed
(<0.25nm)
TAT (1m/10μm2)
Rigorous Model
Shroedinger's Equation etc
Model Self Consistent mean Field Dissipative Particle Dynamics
methodology Based on statistical field theory Based on Newton's motion equation
Challenge Modeling of thermal
fluctuations
Difficult to fit to a measured data
Target
SCF DPD
TAT (5h/10μm2)
(5nm)
DSA Simulation Model
TAT (? years/10μm2)
Impractical model
35
DSA Simulation Model ◆ Molecular Dynamics based Available Free Software Tools are;
LAMMPS /GROMAX/ OCTA-COGNAC,, Coarse Grained MD
DPD(Dissipative Particle Dynamics)
Δvelocity Solvent
Dissipative Force
Repulsive Force
Coarse Graining
Beads Spring
Brownian Motion
Spring Force
36
Challenges for DSA Lithography
• High performance DSA material – High χ material
– Resolution, LWR/LER, Etching
• Long term stability – Robust material and tool for environmental control such as surface energy stability,
temperature, humidity, pressure and PH, etc.
– Defectivity, CD and overlay accuracy
• Development of molecular dynamics based DSA simulator – More accurate simulation model
• BCP and related molecular design
• Microphase separation (2D/3D)
– TAT / accuracy trade-off
• DSA OPC/DFM technology – Design rule verification
– DSA and guide patterning (litho/wet/dry)
• Metrology & Inspection – Metrology for 3D profile
– Inspection technology for 1xnmhp and beyond needs to overcome throughput / accuracy / sensitivity trade-off.
37
Contents
Device Roadmap and Lithography
Extendibility toward 1x nm hp and
beyond with New Lithography
SAxP
EUVL
EUVL+DSA
Conclusion
38
Conclusion
Economical factor is dominant criteria for a lithography strategy
For Memory Device; Throughput, Investment & Si Process Cost
For Logic Device ; Mask Cost, Cycle Time
EUVL
Moving from R&D phase to production
Light source performance is improving, but a significant concern.
DSA
DSA will be a complementary technology for all other lithography
EUVL+DSA will be one of candidates for sub 10nm lithography.
Next Challenges
Next generation lithography will depend on innovation of infrastructure technologies such as OPC, DFM, M&I, etching and cleaning.
39 2013/7/7