Vadim Banine

with the help of Rudy Peters, David Brandt, Igor Fomenkov,

Maarten van Kampen, Andrei Yakunin, Vladimir Ivanov and

many other people of ASML and Cymer

EUV lithography: status, future

requirements and challenges

EUVL Dublin

November 2013

Introduction

Why EUVL

Status of the source

Summary and acknowledgements

Public

Slide 2

Contents

Introduction

Why EUVL

Status of the source

Summary and acknowledgements

Public

Slide 3

Contents

EUV is a cost effective solution Public

Slide 4

EUV enables 50% Scaling for the 10 nm logic node Layout restrictions and litho performance limit shrink to ~25% using immersion

Reference

N20/16

double

patterning

triple

patterning

EUV

No

rma

lize

d d

ie s

ize

[%

]

Source: ARM

EUV meets all litho requirements

Triple patterning does not show a process window

Public

Slide 5

ASML’s NXE:3100 and NXE:3300B Public

Slide 6

NXE:3100 NXE:3300B

NA 0.25 0.33

Illumination Conventional 0.8 s Conventional 0.9 s

Off-axis illumination

Resolution 27 nm 22 nm

Dedicated Chuck Overlay /

Matched Machine Overlay

4.0 nm / 7.0 nm 3.0 nm / 5.0 nm

Productivity 6 - 60 Wafers / hour 50 - 125 Wafers / hour

Resist Dose 10 mJ / cm2 15 mJ / cm2

The NXE:3100 has exposed >46,000 wafers Public

Slide 7

0

5000

10000

15000

20000

25000

30000

35000

40000

45000

50000

20

10

27

20

10

32

20

10

37

20

10

42

20

10

47

20

10

52

20

11

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20

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45

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03

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23

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28

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33

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26

Acc

um

ula

ted

waf

ers

exp

ose

d o

n N

XE:

31

00

• Cycles of learning

• Stable performance

• Steady wafer output

Introduction

NXE:3300B

Public

Slide 8

Contents

Public

Slide 9

Eleven NXE:3300B systems in various states of integration

System 3

System 1 System 10

System 4

System 8

System 5

System 7

System 6

System 2

System 9 System

Training

EUV cleanroom

System 11

Qualified

Qualified

Building extension started

Resolution shown on NXE:3300B for dense line spaces, regular

and staggered contact holes; all single exposures Public

Slide 10

13nm HP

14nm HP

Dipole30,

Chemically Amplified

Resist (CAR)

Quasar 30 (CAR)

17nm HP

18nm HP

18nm HP

19nm HP

Large Annular (CAR)

Dipole45,

Inpria Resist

13nm HP

14nm HP

EUV ArF immersion

Node: N10 (23nm HP)

Target insertion point for EUV

Node: N20 (32nm

HP)

Single Exposure

Conventional illumination

Double Patterning

(design split)

Best focus difference ~10nm Best focus difference

up to 40-60nm

Overlapping DoF

current 100..120nm (expected to improve after

further optimization (e.g. OPC))

Overlapping DoF

typical ≈ 60nm

Public

-80nm

-60nm

-40nm

-20nm

0nm

20nm

40nm

60nm

80nm

focus

Slide 11

NXE:3300B enables single exposure random logic metal

layer with large DoF minimum HP 23 nm (N10 logic cell)

-12mm 0mm +12mm

Excellent print performance over the full exposure slit

EUV enables aggressive shrink on 2D logic shrink possible beyond N10 node requirement Public

Slide 12

1D

EUV (SE)*

ArFi (SE) 75nm

50nm

22nm

31nm MEEF Tip2Line

* using high dose resist @ ~50mJ

EUV (SE) ArFi (DPT) 16nm

Node

NXE3300B: Line ends imaging - tip2tip and tip2line -

supports 10nm logic node with Quasar illumination

15 mJ/cm2 16.5 mJ/cm2 18 mJ/cm2

20nm mask gap 22nm L/S grating

22nm mask gap

28nm

36nm

28nm

36nm Conv. Quasar

Logic 10nm

Logic 10nm

Public

Slide 13

Ded

icate

d C

hu

ck

Ov

erl

ay [

nm

]

1 2 30

2

4

6

8Lot (1.3,1.3)

1.31.0

1.21.4

1.41.3

X

Y

Day

5 nm

99.7%x: 1.3 nmy: 1.3 nm

Filtered S2F Chuck 1 (S2F)

NXE:3300B imaging and overlay beyond expectations matched overlay to immersion ~3.5nm

Matc

hed

Mach

ine O

verl

ay

NX

E-

imm

ers

ion

[n

m]

1 2 30

2

4

6

8

Lot (3.4,3.0)

3.52.7 3.0

2.3

3.23.3

X

Y

Day

5 nm

99.7%x: 3.4 nmy: 3.0 nm

Filtered S2F (S2F)

XT:1950i reference wafers

EEXY sub-recipes

18par (avg. field) +

CPE (6 par per field)

Full wafer CDU = 1.5nm

22nm HP

BE = 15.9 mJ/cm2

EL = 13%

DoF = 160 nm

Scanner qualification

Scanner capability

18 nm HP 13 nm HP 23 nm HP

9 nm HP

Single exposure EUV Spacer

Public

Slide 14

>900,000 wafer cycled on NXE:3300B for integration and

reliability testing Public

Slide 15

Introduction

Why EUVL

Status of the source

Summary and acknowledgements

Public

Slide 16

Contents

Source Pedestal

Scanner

Pedestal

Fab Floor Fab Floor

Sub-fab Floor

Scanner

metrology for

source to

scanner

alignment

CO2-droplet Metrology

Main Pulse / Pre Pulse

split

Focusing

CO2 system

Tin

catch

Vessel

Droplet

Generator

Collector

EUV&droplet

Metrology

Beam

Tra

nsp

ort

Power Amplifiers PP&MP Seed unit

Inte

rmed

iate

Fo

cu

s U

nit

Plasma+Energy

Control

Machine Control

x z

x=droplet stream direction, z=CO2 light direction, y=orthogonal

EUV source system cross-section Public

Slide 17

Power

Availability

Dose control

Key components:

• Drive Laser

• Collector

• Droplet generator

• Vessel

• Controls (E,x,y,z,t)

• Final Focus Assembly

Source Cymer ASML company

Cymer/ASML LPP Source Development History Public

Slide 18

Cymer/ASML

cooperation

established

3300

Source

Shipment

Coatings for

collector

lifetime

Collector

protection

to 60W

CO2/Sn for

high CE

3300 Vessel

shipment

30mm droplets

with wide spacing

1st source

Development

First 5sr

collector

Proto source

integrated

with scanner

Active gas

debris

mitigation

MOPA + PP

Development

SPF

collector

-1.0 -0.5 0.0 0.5 1.0

0

1

2

3

4

-1.0 -0.5 0.0 0.5 1.0 0

1

2

3

4

CE

, %

Lens position, a.u.

CO2 PP

40W stable

MOPA+PP

Automated 50W

MOPA+PP

3100 source

shipment

2006 2007 2008 2009 2010 2011 2012 2013

EUV Power Scaling

Top Technology Challenges Public

Slide 19

High power CO2 Laser

High repetition rate:

fast droplet generator

Collector lifetime:

debris protection

EUV output:

Conversion efficiency

Dose control:

targeting and

laser stability

EUV Power Scaling

Top Technology Challenges Public

Slide 20

High power CO2 Laser: to 47 kW

High Power Seed Laser is Key to the Drive Laser

350W at 80kHz Demonstrated Public

Slide 21

• Seed Laser power delivery to the amplifiers is critical to achieving saturation

and maximum power extraction from the amplifiers

• 350W target design power at 80 kHz repetition rate

– Already achieved in system-level bench testing

40 50 60 70 800

100

200

300

400

H

igh-

Pow

er S

eed

Mod

ule

Out

put (

W)

Pulse Repetition Rate (kHz)Source Cymer ASML company

New Amplifier for Increase Power is Operational

Reached maximum of 35kW with good laser mode profile Public

Slide 22

• Higher power amplifier development completed at supplier

• Repeatable, stable operation at ~35kW (increased from 20kW)

– Single amplifier continuous (cw) output power

– Pulsed mode operation is ~30% of cw

• Good beam quality measured good focusability

Good beam quality Source Cymer ASML company

EUV Power Scaling

Top Technology Challenges Public

Slide 23

EUV output:

Conversion efficiency

To 3.3%

MOPA pre-pulse explained Public

Slide 24

Pre-pulse

Expansion of pre-

pulsed target Shooting with the

main pulse

Shadow-gram

from a side

Shadow-gram

from the front

Diagnostics is at place to understand and tune the MOPA pre-pulse process

Video

Modeling of the particle break down

More on this in the presentation of V. Ivanov at this conference

Model Experimentl

Model is being created to predict the droplet expansion behaviour

Public

Slide 25

CE: RZLINE vs measured for various target and laser

configurations

Slide 26 |

• No fitting parameters are used in the model

• RZLINE predicts well CE trend for various target geometries

• Maximum predicted CE=5.5% (for λ=10.6 um)

Data points:

Lab N1

1. MOPA+PP; Type A

2. MOPA+PP; Type B

3. TEA; Plane target (E=0.3 J)

Lab N2:

4. MOPA+PP Type C

5. MOPA+ PP Type D

6. MOPA+ PP Type E

Lab N3:

7. Other wavelength

1

2

3

4

5

6

1 2 3 4 5 6

Mea

sure

d CE

, %

Calculated CE, %

Cymer

GPI

PowerLase

Maximum predicted for optimal pulse

shape CE=5.5%

1.

3.

5. 2.

4.

6.

7.

Lab N2

Lab N1

Lab N3

Public

Slide 26

RZLINE vs experimental CE data on plane target

(variation of laser spot size)

Slide 27 |

Cymer experiment (SPIE data)

RZLINE parameters

• Sn flat target

• E=300 mJ

• F=190 mm

• CO2 laser

Cymer experiment vs RZLINE

RZLINE predicts well optimal power density and general CE trend on plane target

Optimum

Public

Slide 27

RZLINE vs Cymer CE data on plane target

(Z-variation)

Slide 28 |

Cymer experiment (SPIE data) RZLINE with laser caustics

RZLINE reproduces “double hump” behavior of CE

This module is developed to account for back reflection of laser

0

1

2

3

4

5

6

7

-5 -3 -1 1 3 5

CE, %

in 2

pi o

f con

dens

er

Focusing lens position, mm

CE as a function of focusing lens position; plane target, Cymer 175ns pulse, 70 um (1/e^2)

CO2 beam

MOPA

Public

Slide 28

MOPA Prepulse Technology for High Power Sources

Improved Prepulse shows 3.7% CE, driven by target size and

stability (droplet and expanded target)

720W in 2p 176W raw at IF 140W at IF

(calc dose controlled)

LT1 EUV power at low DC

40 50 60 70 80 900

2

4

6

8

10

12

EU

V E

nerg

y S

tabi

lity

(%) (

s/m

ean)

EUV Sensor Angle (degree)

10 mm PP

1 mm PPType 1 Type 2

Source Cymer ASML company

Public

Slide 29

EUV Power Scaling

Top Technology Challenges Public

Slide 30

Dose control:

targeting and

laser stability

Public

Slide 31

0 10 20 30 40 50 60-1

-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

1

Time [min]

Do

se

Err

or

[%]

0 10 20 30 40 50 60-1

-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

1

Time [min]

Do

se

Err

or

[%]

0 10 20 30 40 50 60-1

-0.8

-0.6

-0.4

-0.2

0

0.2

0.4

0.6

0.8

1

Time [min]

Do

se

Err

or

[%]

Repeatable 50W MOPA PrePulse EUV Power and Dose Stability Dose Stability <±0.5%, Die Yield >99.7%

0 10 20 30 40 50 6049

49.2

49.4

49.6

49.8

50

50.2

50.4

50.6

50.8

51

Time [min]

Po

wer

[W]

0 10 20 30 40 50 6049

49.2

49.4

49.6

49.8

50

50.2

50.4

50.6

50.8

51

Time [min]

Po

wer

[W]

0 10 20 30 40 50 6049

49.2

49.4

49.6

49.8

50

50.2

50.4

50.6

50.8

51

Time [min]

Po

we

r [W

]

Power roadmap enabled by higher power

CO2 and optimization of pre pulse system

• Total 32 hours 40W & 50W runs with

good dose reproducibility:

• 99.7% of the dies < 0.5% dose

• representing ~ 1330 exposed

wafers @ 15 mJ/cm2

• 55W run (97.5% of dies in spec)

to test peak performance

Public

Slide 32

MOPA PrePulse sources demonstrated repeatable, stable

performance & dose controlled

EUV Power Scaling

Top Technology Challenges Public

Slide 33

Collector lifetime:

debris protection

3100 Collector Lifetime in the

Field

34

Champion lifetime in the field ~11 months

(~120 billion pulses)

Six collectors with >6 months lifetime

Update given at SPIE in February

SPIE 2011 SPIE 2013 May 2013

Type Average Lifetime

(sample size)

Best lifetime

Uncapped 7 Gp (8) 15 Gp (1)

Current Cap Layer 42 Gp (19, 5 still going) 120 Gp (1)

Cap layer development has

increased average collector

lifetime by >5X since initial

installations

Source Cymer ASML company

Modeling of flow and collector contamination

More on this in the presentation of V. Ivanov at this conference

Target:

Minimization of collector

contamination

Public

Slide 35

In-situ collector cleaning has been demonstrated and

is a key enabler for availability and CoO

• Cleaning on standard MLM capped NXE:3100 Collector

• Tin deposited during normal EUV operation was removed with reactive gas

Public

• Start of test • Collector after cleaning in-situ (in the

vessel) reflectivity fully recovered Area to be cleaned

Slide 36

Collector Cleaning using RF Plasma

37

Cymer funded project with University of Illinois at Urbana – Champaign

Demonstrated 200nm Sn cleaning from Si sample placed on collector surface

Demonstrated 25nm Sn cleaning from the entire 300mm dummy LT-1 collector

200nm Sn cleaning from Si samples

placed on collector surface

25nm Sn cleaning from 300mm dummy

collector

Source Cymer ASML company

Public

Slide 37

MOPA +PP collector protection demonstrated on

NXE:3100 source with full reflectivity recovery

After cleaning (15 Gp) 1.2 Mpulses Bottom

Top

Bottom

Top

15 Gpulses Bottom

Top

R/R0 = 100% R/R0 ~ 95% R/R0 ~ 100%

• Source operated at 40W and all loops closed

Public

Slide 38

EUV source power roadmap with dose control

NXE:3300B NXE:3300B NXE:3300B

EUV dose controlled

power (in-burst) 80W 125W 250W

Drive Laser 26kW 33kW 47kW

CE 3.0% 3.0% 3.3%

NXE:3300B Drive Laser NXE:3300B

Vessel

Power scaling is achieved with increased

CO2 laser power and conversion efficiency

Public

Slide 39

Introduction

Why EUVL

Status of the source

Summary and acknowledgements

Contents

Public

Slide 40

Summary

• NXE:3100 in use for process and device development at customers

• NXE:3300B performance fit for customer development 10nm Logic and sub-20nm DRAM

• Overlay performance of DCO<2nm and MMO<4nm demonstrated

• Resolution of 13nm LS and 18nm Contact Holes demonstrated. Further process optimization to be done

• Good imaging performance for 1D (Line Space), 2D (Contact Holes and Metal 1), and Tip-to-Tip / Tip-to-Line have been shown

• Dose reduction achieved by utilizing contrast enhancement with off-axis illumination

• 50W repeatable source power demonstrated with good dose control

Slide 41

Public 13nm HP

1 2 30

2

4

6

8

Lot (3.4,3.0)

3.52.7 3.0

2.3

3.23.3

X

Y

Ma

tch

ed

Ma

chin

e

Ove

rlay [

nm

]

0 10 20 30 40 50 6049

49.2

49.4

49.6

49.8

50

50.2

50.4

50.6

50.8

51

Time [min]

Po

wer

[W]

50W repeatable

power

Acknowledgements

Slide 42

The work presented today, is the result of hard work and dedication

of teams at ASML , Cymer and many technology partners

worldwide including our customers

Special thanks to our partners and customers for allowing us to use

some of their data in this presentation

Public