EUV GRATINGS

Eulitha’s EUV gratings are fabricated on thin silicon nitride mambranes

using high-resolution ebeam lithography. The gratings are typically

etched into a Cr film deposited on the membrane. In order to boost

the diffraction efficiency and to improve transmission the nitride

membrane is sometimes also etched until a very thin support film remains

(see diagram below). Gratings down to a period of 80nm are available.

Applications for EUV gratings include spectroscopy and EUV interference

lithography.

EUV gratings are produces according to customers’ specifications.

Please contact us with your requirements.

EULITHA AG, 5232 Villigen PSI, Switzerland - www.eulitha.com - tel: 41 56 310 4279 - fax: 41 56 310 4153 - info@eulitha.com

EULITHA

Silicon nitride membrane

p

tCr

tSiNhSiN

L: Si frame width 5-10mm

w: Silicon nitride membrane width 2-5mm

g: Grating width <w-1mm

p: Grating period >80nm

t : Cr film thickness, 0-50nm (typical)Cr

t : Silicon nitride membrane thickness 100-300nmSiN

h : Remaining (support) silicon nitride thickness >30nm SiN

Silicon Frame

Silicon nitride membrane

Cr filmw

L

g

25.8.2015

2D EUV grating (array of holes)

1um-period EUV grating with support bars 100nm-period EUV grating