Emerging Research Materials - ece.northeastern.edu · 400 500 600 700 1990 1995 2000 2005 Year Curie Temperature (Tc (K)) Doped Oxides (III.Mn)V Carrier mediated exchange Room temperature

ITRS Winter Conference 2007 Makuhari-Messe Tokyo, Japan 1

2007 ITRS

Emerging Research Materials[ERM]

December 5, 2007

Michael Garner – IntelDaniel Herr – SRC


2006 - 2007 ERM ParticipantsHiro Akinaga AISTBob Allen IBMNobuo Aoi MatsushitaKoyu Asai RenesasYuji Awano FujitsuDaniel-Camille Bensahel STMChuck Black BNLThomas BjornholmAgeeth Bol IBMBill Bottoms NanonexusGeorge Bourianoff IntelAlex Bratkovski HPMarie Burnham FreescaleWilliam Butler U. of AlabamaJohn Carruthers Port. State Univ.Zhihong Chen IBMU-In Chung SamsungRinn Cleavelin TIReed Content AMDHongjie Dai Stanford Univ.Joe DeSimone UNCJean Dijon LETITerry Francis T A Francis Assoc.Chuck Fraust SIASatoshi Fujimura TOKMichael Garner IntelAvik GhoshEmmanuel Giannelis Cornell Univ.Michael Goldstein IntelJoe Gordon IBM

Jim Hannon IBMCraig Hawker UCSBRobert Helms UTDRudi Hendel AMATDan Herr SRCSusan Holl SpansionGreg Higashi IntelHarold Hosack SRCJim Hutchby SRCKohei Ito Keio Univ.James Jewett IntelAntoine Kahn Princeton Univ. Sergie Kalinin ORNLTed Kamins HPMasashi Kawasaki Tohoku Univ.Steve Knight NISTGertjan Koster Stanford Univ.Roger Lake U.C. RiversideLouis Lome IDA Cons.Allan MacDonald Texas A&MFrancois Martin LETIFumihiro Matsukura Tohoku UAndrew Millis Columbia Univ.Bob Miller IBMChris Murray IBMPaul Nealey U. Wisc.We-Xin Ni NNDLFumiyuki Nihey NECDmitri Nikonov IntelYoshio Nishi StanfordChris Ober Cornell Univ.Brian Raley FreescaleRamamoorthy Ramesh U.C. BerkeleyNachiket Raravikar IntelMark Reed Yale Univ.

Curt Richter NISTDave Roberts Air ProductsFrances Ross IBMTadashi Sakai ToshibaLars Samuelson Lund UniversityMitusru Sato TOKJohn Henry Scott NISTFarhang Shadman U Az.Sadasivan Shankar IntelAtsushi Shiota JSRMicroReyes Sierra U Az.Kaushal Singh AMATSusanne Stemmer UCSBNaoyuki Sugiyama TorayShinichi Tagaki U of TokyoKoki Tamura TOKYasuhide Tomioka AISTEvgeny Tsymbal U. of NebraskaEmanuel Tutuc IBMKen Uchida ToshibaJohn Unguris NISTBert Vermiere Env. Metrol. Corp.Yasuo Wada Toyo UVijay Wakharkar IntelKang Wang UCLARainer Waser Aacken Univ.Stanley Williams HPC.P. Wong GA Tech. Univ.H.S. Philip Wong Stanford UniversityWalter Worth ISEMATECHHiroshi Yamaguchi NTTToru Yamaguchi NTTIn Kyeong Yoo SamsungVictor Zhirnov SRC


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Macromolecular Scale Devices are on the ITRS Horizon

ITRS

Revised 2006 from: D. Herr and V. Zhirnov, Computer, IEEE, pp. 34-43 (2001).

Macromolecular Scale Components:Low dimensional nanomaterialsMacromoleculesDirected self-assemblyComplex metal oxidesHetero-structures and interfacesSpin materials

Macromolecular Scale Devices


Outline• ERM Goals and Scope• Emerging Research Device Examples• Lithography Example• FEP Example• Interconnect Example• Assembly & packaging Example• Environment Safety & Health• ERM Metrology & Modeling Needs• Summary


Emerging Research Materials [ERM]

New Cross-cutting ERM ChapterGoal: Identify critical ERM technical and timing requirements for ITWG identified applicationsAlign ERM requirements with ITWG needs

ERM with potential value to ITWG GapsDifficult challenges that must be overcome

Consolidate materials research requirements for:University and government researchers

Chemists, materials scientists, etc.Industry Researchers

SemiconductorChemical, material, and equipment suppliers


ERM Potential ITWG Applications

Interfaces & Heterointerfaces

Complex Metal Oxides

Spin Materials

Self Assembled Materials

Macromolecules

Low Dimensional Materials

Assembly and Package

InterconnectsFEPLithographyERD LogicERD Memory

Materials

Potential Applications Identified


ERM for Emerging Research DevicesExamples


Emerging Research Device Applications

Device State* Emerging Materials1D Charge State (Low Dimensional Materials)Molecular State (Macromolecules)Spin State (Spin Materials and CMO**)Phase State (CMO**and Heterointerfaces)Memory– Fuse/anti-fuse, Ferroelectric FET, etc.

All Devices have critical interface requirements

*Representative Device Applications**CMO = Complex Metal Oxides


1D Charge State

Carbon Nanotube FET

Source Intel

Group IV & III-V NanowiresGrow in 111 OrientationCatalyst determines location(T. Kamins, el. Al., HP)

Atomically smooth Heterostructures(L. Samuelson, Lund Univ.) Nanotube Challenges

•Control of Location &

Orientation

•Control of Bandgap

•Contact Resistance

Quantum DotA. Geim, Manchester U.

Graphene & Graphitic Carbon

Advantage: Patternable

Challenge: Deposition, Edge PassivationCarrier doping & control is challenging for low dimensional materials


• Need more research on contact formation• Novel lower potential barrier contacts…

Molecular State

High contact energy barriers may be masking potential molecular switching!!


Spin State

Need Room Temp FM Semiconductor

Maximum Curie Temperature

0100200300400500600700

1990 1995 2000 2005

Year

Cur

ie T

empe

ratu

re (T

c (K

)) Doped Oxides(III.Mn)V

Carrier mediated exchange

Room temperature ferromagnetic semiconductors (T curie)

•Reports of high Currie temperature FM semiconductors•GeMn Nanocolumns >400K•SiMn >400K•(InMn)P ~300K•Need verification & more study


Complex Metal Oxides• Complex Metal Oxides

– MgO, Pb(Zr1-xTix)O3, La1-xSrxMnO3 , BiFeO3• Memory

– FeFET (Ferroelectric polarization)– Fuse-antifuse (Resistance change, etc.)

• Logic – Spin Tunnel Barriers– Novel Logic Heterostructures (Coupling charge to magnetic

properties & alignment)• Challenges

– Control of Vacancies– Contact stability

• Hydrogen degradation – Electric field & environmental stability– Control of stress & crystal structure

RHEED excited Cathodoluminescence

Oxygen VacanciesD. Winkler, et. al. 2005


• Materials exhibit complex phase relationships•Structure, Strain, Spin, Charge, Orbital Ordering

• Goal: Determine whether complex phases and coupled dynamic and static properties have any potential to enable alternate state logic devices

• Example: Mott transition or other coupled states

Strongly Correlated Electron State

Can these materials enable new device functions?

TokuraTokura


SrO0

TiO20

LaO+

AlO2-

……

Novel Properties at Hetero-interfacesSrTiO3-LaAlO3

Critical thickness

Hetero-interfaces may enable novel coupling of properties!!

J. Mannhart et. al. 2006Augsburg Univ.


ERM for LithographyExamples


Resist: Unique PropertiesImmersion: Low leaching and low surface energyEUV: Low outgassing, high speed and flare tolerant

Imprint MaterialsLow viscosityEasy release

Directed Self-AssemblyResolution, LER, density, defects, required shapes, throughput, registration and alignment

Emerging Lithography Applications

OR

RO

RO

OR RO

OR

OR

RO

OR

OR

RO

OR

Molecular Glasses and PAGS, Ober, Cornell

Macromolecular ArchitecturesPolymer Design,

R. Allen, IBM

Directed di-block Copolymer SelfAssembly P. Nealey, U. Wisc.

Dendrimers, Frechet, UC-B

Sublithographic resolution and registration Ross, MIT

25 nm L/S


Design Pattern Requirements forDirected Self-Assembly


ERM for Front End ProcessingExample


Deterministic Doping

Selective Processes/CleansMacromolecules

Self-assembling materials and processes

Emerging FEP ApplicationsConductance variability

reduced from 63% to 13% by controlling dopant numbers and roughly ordered arrays;

Conductance due to implant positional variability within circular implant regions of the ordered array ~13%.

S D

Intel

From Shinada et. Al., “Enhancing Semiconductor Device Performance Using Ordered Dopant Arrays”, Nature, 437 (20) 1128-1131 (2005) [Waseda University]

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# o

f ch

ann

el

elec

tron

s

D. Herr, with data from the 2005 ITRS

~2014


ERM for InterconnectsExamples


10 100 10000

1

2

3

4

5sidewall

grain boundary

bulk resistivity

Res

istiv

ity [µ

Ω c

m]

Line width [nm]

Emerging Interconnect ApplicationsViasMulti-wall CNTHigher densityContact ResistanceAdhesion

InterconnectsMetallicAlignmentContact Resistance

DielectricsNovel Polymer ILDs

Y. Awano, Fujitsu

H. Dai, Stanford Univ.

Quartz Crystal Step Alignment

Ref. 2005 ITRS, INT TWG, p. 22

ERMs Must Have Lower Resistivity

Cu


ERM for Assembly & PackagingExamples


Emerging Packaging Applications

Thermal Nanotubes

High Density Power Delivery Capacitors

Dielectrics: High K

Self Assembly

Interconnects: Nanotubes or Nanowires

Package Thermo-Mechanical

Substrate: Nanoparticles, Macromolecules

Adhesives: Macromolecules, Nanoparticles

Chip Interconnect: Nanoparticles


Environment, Safety, and Health

Metrology needed to detect the presence of nanoparticles

Research needed on potential undesirable bio-interactions of nanoparticles

Need Hierarchical Risk/Hazard assessment protocol

Research, Development, Commercialization

Leverage Existing Research and Standards Activities


Emerging Metrology and Modeling NeedsMetrology

Chemical and structural imaging and dimensional accuracy at the nm scaleLow dimensional material properties (Mapping)Nano-interface characterization (carbon)Simultaneous spin and electrical propertiesnm scale characterization of vacancies and defects

Modeling Materials and InterfacesLow dimensional material synthesis & propertiesSpin material propertiesStrongly correlated electron material properties

Long range and dynamic Integrated models and metrology (de-convolution of nm scale metrology signals)

Metrology and modeling must be able characterize and predict performance and reliability


Summary

ERM identifies materials with desirable properties that may enable potential solutions for ITWG applications

Significant challenges must be addressed for these materials to be viable for transfer to the ITWGs

Future: Refine and update ERM requirementsAssess ERM progress toward meeting identified application requirementsIdentify new ITWG application opportunities for ERM Identify new families of Emerging Research Materials

Documents

Emerging Research Materials - ece.northeastern.edu · 400 500 600 700 1990 1995 2000 2005 Year Curie Temperature (Tc (K)) Doped Oxides (III.Mn)V Carrier mediated exchange Room temperature