Electronics Datasheet collection (WIP)

PT-FD-018 POSTEC Electronics Co.,Ltd. A4

DATE.

TMMV

DSGD.CHKD.APPD.SYMB.

SPEC NO.

KMM-902 (1/5)

NAME

TACT SWITCH SPECIFICATIONS

DSGD.CHKD.APPD.

1. GENERAL

1-1. Scope : This specification covers the requirements for single key switches which have

no key top. (TACT SWITCHS : MECHANICAL CONTACT)

1-2. Operating Temperature Range : -30 to +85 (normal humidity, normal pressure)

1-3. Storage Temperature Range : -30 to +85 (normal humidity, normal pressure)

1-4. Test Conditions : Test and measurements shall be made in the following

standard conditions unless otherwise specified

Normal temperature : +5 to +35

Normal humidity : 45 to 85% RH

Normal pressure : 860 to 1060 mbars

In case any questions arises from the judgment made, tests shall be

conducted in the following conditions:

Temperature : +20 2

Relative humidity : 65 5% RH

Pressure : 860 to 1060 mbars

2. APPEARANCE, STYLE AND DIMENSIONS

2-1. Appearance : There shall be no defects that affect the serviceability of the product.

2-2. Style and Dimensions : Shall conform to the assembly drawings.

3. TYPE OF ACTUATION : Tactile feedback

4. CONTACT ARRANGEMENT : 1 poles 1 throws

(Details of contact arrangement are given in the assembly drawings.)

5. MAXIMUM RATINGS : DC 12V, 50mA

6. PERFORMANCE

6-1. Electrical Performance

TITLE


SPEC NO.

KMM-902

There shall be no

breakdown.

100M min

100m max

Requirements

AC 250V (50Hz or 60Hz) shall be applied across ter-

minals and across terminals and frame for one minute.

Measurements shall be made following application of

DC 100V potential across terminals and across

terminals and frame for one minute.

Applying a static load (220gf) the actuating force to

the center of the stem, measurements shall be made

With a 1 KHz small current contact resistance meter.

Test Conditions

6-1-3

Dielectric

withstanding

6-1-2

Insulation

Resistance

6-1-1

Contact

Resistance

Item


TMMV

TITLE


SPEC NO.

KMM-902

DATE. DSGD.CHKD.APPD.SYMB.

SPEC NO.

KMM-902 (2/5)

NAME


DSGD.CHKD.APPD.

6-2. Mechanical performance

RequirementsTest ConditionsItem

500gfPlacing the switch such that the direction of switch

operation is vertical, the maximum force to withstand

a pull applied opposite to the direction of stem

operation shall be measured.

6-2-5

STEM

Strength

There shall be no

Sign of damage

Mechanic. & elec.

50gf min

0.250.1mm

16050gf

Placing the switch such that the direction of switch operation

Is vertical, a static load of 3Kgf shall be applied in the direction of stem operation for a period of 60 seconds.

The sample switch is installed such that the direction of switch operation is vertical, and upon depression of the stem in its center the whole travel distance, the force of the stem to return to its free position shall be measured.

Placing the switch such that the direction of switch

operation is vertical and then applying a static load

twice the actuating force to the center of the stem

the travel distance for the stem to come to a stop

shall be measured.

Placing the switch such that the direction of switch

operation is vertical and then gradually increasing

the load applied to the center of the stem , the

maximum load required for the stem to come to a stop

shall be measured.

6-2-4

Stop

Strength

6-2-3

Return

Force

6-2-2

Travel

6-2-1

Operating

Force


5ms max

Lightly striking the center of the stem at a rate encountered in normal use (3/sec), bounce shall be tested at "ON" and "OFF"

6-1-4BOUNCE

SWITCH5K OSCILLOSCOPE5V

ON OFF


TMMV

TITLE


SPEC NO.

KMM-902


SPEC NO.

KMM-902 (3/5)

NAME


DSGD.CHKD.APPD.

6-3 Environmental Performance

6-4 Endurance


Item 6-1

Item 6-2-1

Item 6-2-2

Contact resistance

: 200m ohm max.

Insulation resistance

: 10M ohm min.

Item 6-1-3,Item 6-1-4

Item 6-2-1,Item 6-2-2

Item 6-1

Item 6-2-1

Item 6-2-2

Item 6-1

Item 6-2-1

Item 6-2-2

Following five cycles of the temperature cycling test

set forth below the sample shall be left in normal

temperature and humidity conditions for one hour

before measurements are made. During this test,

Water drops shall be removed.

Following the test set forth below the sample shall

be left in normal temperature and humidity conditions

for one hour before measurements are made:

(1) Temperature : +402

(2) Relative humidity : 90 to 95%

(3) Time : 96 hours

(4) Water drops shall be removed.




(1) Temperature : +852

(2) Time : 96 hours




(1) Temperature : -402

(2) Time : 96 hours

(3) Waterdrops shall be removed.

6-3-4

Temperature

Cycle

6-3-3

Moisture

Resistance

6-3-2

Heat

Resistance

6-3-1

Resistance

to Low

Temperatures

1CYCLE

2H 2H 1H1H

+60

-10

Contact resistance

: 200m ohm max.

Insulation resistance

: 10M ohm min

Bounce : 10m Sec max.

Actuating force

:30% of initial force

Item 6-1-3 , Item 6-2-2

Measurements shall be made following the test set

forth below:

(1) DC 5V 5mA resistive load.

(2) Rate of operation : 2 to 3 operations per second.

(3) Depression : 220gf Max.

(4) Cycles of operation : 100,000 cycles

6-4-1

Operating

Life



TMMV

TITLE


SPEC NO.

KMM-902


SPEC NO.

KMM-902 (4/5)

NAME


DSGD.CHKD.APPD.

7. REFLOW SOLDERING CONDITION


Item 6-1

Item 6-2-1

Item 6-2-2

Item 6-1

Item 6-2-1

Item 6-2-2

Measurements shall be made following the test set

forth below

(1) Acceleration : 80G(784 )

(2) Cycles of test : 3 cycles each in 6 directions, for a

total of 18 cycles

Measurements shall be made following the test set forth

Below:

(1) Range of oscillation : 10 to 55Hz

(2) Amplitude, pk-to pk : 1.5mm

(3) Cycle of sweep : 10-55-10Hz in one minute approx.

(4) Made of sweep : Logarithmical sweep or uniform sweep

(5) Direction of oscillation :

Three mutually perpendicular directions including the

direction of stem travel

(6) Duration of testing : 2hours each , for a total of 6

hours.

6-4-3

Impact shock

Resistance

6-4-2

Vibration

Resistance

2 times max.

Temperature on the copper foil surface should reach the peak temperature of 260

Within 3010 seconds after the PCB entered into soldering heat zone.

Temperature on the copper foil surface should reach 180, 20.3 minutes after

The PCB entered into soldering equipment.

Test Conditions

7-3Allowable Frequency

Of Soldering

Process

7-2

Soldering

Heat

7-1

Preheat

Item

3010 sec. max20.3 min

3~4 min

260

230180

150

100

Time inside soldering equipment

Copper foilsurfacetemperature()


TMMV

TITLE


SPEC NO.

KMM-902


SPEC NO.

KMM-902 (5/5)

NAME


DSGD.CHKD.APPD.

7. Manual Solder Condition

3 Sec Max

350 Max

Test Conditions

8-2

Soldering

Time

8-1

Soldering

Temp

Item

2N3904Vishay Semiconductorsformerly General Semiconductor

Document Number 88113 www.vishay.com07-May-02 1

New Product

Small Signal Transistor (NPN)

Features NPN Silicon Epitaxial Planar Transistor for

switching and amplifier applications. As complementary type, the PNP transistor

2N3906 is recommended. On special request, this transistor is also

manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case

with the type designation MMBT3904.

Mechanical DataCase: TO-92 Plastic PackageWeight: approx. 0.18gPackaging Codes/Options:

E6/Bulk 5K per container, 20K/boxE7/4K per Ammo mag., 20K/box

Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector-Emitter Voltage VCEO 40 VCollector-Base Voltage VCBO 60 VEmitter-Base Voltage VEBO 6.0 VCollector Current IC 200 mA

Power Dissipation TA = 25C Ptot 625 mWTC = 25C 1.5 WThermal Resistance Junction to Ambient Air RJA 250(1) C/WJunction Temperature Tj 150 CStorage Temperature Range TS 65 to +150 CNote:(1) Valid provided that leads are kept at ambient temperature.

0.181 (4.6)

min

. 0.

492

(12.5)

0.18

1 (4.

6)

0.142 (3.6)

0.098 (2.5)

max. 0.022 (0.55)

Bottom View

TO-226AA (TO-92)

Dimensions in inchesand (millimeters)


www.vishay.com Document Number 881132 07-May-02

Electrical Characteristics (TJ = 25C unless otherwise noted)Parameter Symbol Test Condition Min Typ Max UnitCollector-Base Breakdown Voltage V(BR)CBO IC = 10 A, IE = 0 60 VCollector-Emitter Breakdown Voltage(1) V(BR)CEO IC = 1 mA, IB = 0 40 VEmitter-Base Breakdown Voltage V(BR)EBO IE = 10 A, IC = 0 6 V

Collector Saturation Voltage VCEsat IC = 10 mA, IB = 1 mA 0.2 VIC = 50 mA, IB = 5 mA 0.3

Base Saturation Voltage VBEsat IC = 10 mA, IB = 1 mA 0.85 VIC = 50 mA, IB = 5 mA 0.95Collector-Emitter Cutoff Current ICEV VEB = 3 V, VCE = 30 V 50 nAEmitter-Base Cutoff Current IEBV VEB = 3 V, VCE = 30 V 50 nA

VCE = 1 V, IC = 0.1 mA 40 VCE = 1 V, IC = 1 mA 70

DC Current Gain hFE VCE = 1 V, IC = 10 mA 100 300 VCE = 1 V, IC = 50 mA 60

VCE = 1 V, IC = 100 mA 30

Input Impedance hie VCE = 10 V, IC = 1 mA 1 10 kf = 1 kHz

Voltage Feedback Ratio hre VCE = 10 V, IC = 1 mA 0.5 10-4 8 10-4 f = 1 kHz

Gain-Bandwidth Product fT VCE = 20 V, IC = 10 mA 300 MHzf = 100 MHzCollector-Base Capacitance CCBO VCB = 5 V, f = 100 kHz 4 pFEmitter-Base Capacitance CEBO VCB = 0.5 V, f = 100 kHz 8 pF

Small Signal Current Gain hfe VCE = 10 V, IC = 1 mA, 100 400 f = 1 kHz

Output Admittance hoe VCE = 1 V, IC = 1 mA, 1 40 Sf = 1 kHz

Noise Figure NF VCE = 5 V, IC = 100 A, 5 dBRG = 1k, f = 10...15000 kHzDelay Time (see fig. 1) td IB1 = 1 mA, IC = 10 mA 35 nsRise Time (see fig. 1) tr IB1 = 1 mA, IC = 10 mA 35 ns

Storage Time (see fig. 2) ts IB1 = IB2 = 1 mA 200 nsIC = 10 mA

Fall Time (see fig. 2) tf IB1 = IB2 = 1 mA 50 nsIC = 10 mA

Fig. 1: Test circuit for delay and rise time* total shunt capacitance of test jig and

connectors

Fig. 2: Test circuit for storage and fall time* total shunt capacitance of test jig and

connectors

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

2N3904 / M

MB

T3904 / MM

PQ

3904 / PZT3904

Discrete POWER & SignalTechnologies

N

2N3904 MMBT3904

MMPQ3904 PZT3904

NPN General Purpose Amplifier

This device is designed as a general purpose amplifier and switch.The useful dynamic range extends to 100 mA as a switch and to100 MHz as an amplifier. Sourced from Process 23.

Absolute Maximum Ratings* TA = 25C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES :1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 V

VCBO Collector-Base Voltage 60 V

VEBO Emitter-Base Voltage 6.0 V

IC Collector Current - Continuous 200 mA

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C

CB E

TO-92

BC

C

SOT-223

E

C

B

E

SOT-23Mark: 1A

CC

CC

CC

C C

SOIC-16

EB

EB

EB

E B

2N3904 / M

MB

T3904 / MM

PQ

3904 / PZT3904

NPN General Purpose Amplifier(continued)

Electrical Characteristics TA = 25C unless otherwise noted

Symbol Parameter Test Conditions Min Max Units

V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 10 mA, IE = 0 60 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 mA, IC = 0 6.0 V

IBL Base Cutoff Current VCE = 30 V, VEB = 0 50 nA

ICEX Collector Cutoff Current VCE = 30 V, VEB = 0 50 nA

OFF CHARACTERISTICS

ON CHARACTERISTICS*

SMALL SIGNAL CHARACTERISTICS

SWITCHING CHARACTERISTICS (except MMPQ3904)

*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%

NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2pItf=.4 Vtf=4 Xtf=2 Rb=10)

Spice Model

fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20 V,f = 100 MHz

300 MHz

Cobo Output Capacitance VCB = 5.0 V, IE = 0,f = 1.0 MHz

4.0 pF

Cibo Input Capacitance VEB = 0.5 V, IC = 0,f = 1.0 MHz

8.0 pF

NF Noise Figure (except MMPQ3904) IC = 100 mA, VCE = 5.0 V,RS =1.0kW, f=10 Hz to 15.7 kHz

5.0 dB

td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns

tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns

ts Storage Time VCC = 3.0 V, IC = 10mA 200 ns

tf Fall Time IB1 = IB2 = 1.0 mA 50 ns

hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 VIC = 1.0 mA, VCE = 1.0 VIC = 10 mA, VCE = 1.0 VIC = 50 mA, VCE = 1.0 VIC = 100 mA, VCE = 1.0 V

40701006030

300

VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA

0.20.3

VV

VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA

0.65 0.850.95

VV

2N3904 / M

MB

T3904 / MM

PQ

3904 / PZT3904

Thermal Characteristics TA = 25C unless otherwise noted

Symbol Characteristic Max Units2N3904 *PZT3904

PD Total Device DissipationDerate above 25C

6255.0

1,0008.0

mWmW/C

RqJC Thermal Resistance, Junction to Case 83.3 C/W

RqJA Thermal Resistance, Junction to Ambient 200 125 C/W

Symbol Characteristic Max Units**MMBT3904 MMPQ3904


3502.8

1,0008.0

mWmW/C

RqJA Thermal Resistance, Junction to AmbientEffective 4 DieEach Die

357125240

C/WC/WC/W

Typical Characteristics

Base-Emitter ON Voltage vsCollector Current

Pr23

0.1 1 10 1000.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)V

-

BA

SE

-EM

ITTE

R O

N V

OLT

AG

E (V

)B

E(O

N)

C

V = 5VCE

25 C

125 C

- 40 C

Typical Pulsed Current Gainvs Collector Current

0.1 1 10 1000

100

200

300

400

500

I - COLLECTOR CURRENT (mA)h

- T

YP

ICA

L P

ULS

ED

CU

RR

EN

T G

AIN

FE

- 40 C

25 C

C

V = 5VCE

125 C

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."


Base-Emitter SaturationVoltage vs Collector Current

Pr23

0.1 1 10 100

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)

V

-

BA

SE

-EM

ITTE

R V

OLT

AG

E (V

)B

ES

AT

C

bb = 10

25 C

125 C

- 40 C

Collector-Emitter SaturationVoltage vs Collector Current

Pr23

0.1 1 10 100

0.05

0.1

0.15


-

CO

LLE

CTO

R-E

MIT

TER

VO

LTA

GE

(V)

CE

SA

T

25 C

C

bb = 10

125 C

- 40 C

2N3904 / M

MB

T3904 / MM

PQ

3904 / PZT3904


Typical Characteristics (continued)

Collector-Cutoff Currentvs Ambient Temperature

Pr23

25 50 75 100 125 150

0.1

1

10

100

500

T - AMBIENT TEMPERATURE ( C)

I

- CO

LLE

CTO

R C

UR

RE

NT

(nA

)

A

V = 30VCB

CB

O

Capacitance vs Reverse Bias Voltage

0.1 1 10 1001

2

3

45

10

REVERSE BIAS VOLTAGE (V)

CA

PA

CIT

AN

CE

(pF)

C obo

C ibo

f = 1.0 MHz

Noise Figure vs Frequency

0.1 1 10 1000

2

4

6

8

10

12

f - FREQUENCY (kHz)

NF

- N

OIS

E F

IGU

RE

(dB

)

V = 5.0VCE

I = 100 mmA, R = 500 WWC S

I = 1.0 mA R = 200 WWC

S

I = 50 mmA R = 1.0 k WW

CS

I = 0.5 mA R = 200 WWC

S

kWW

Noise Figure vs Source Resistance

Pr23

0.1 1 10 1000

2

4

6

8

10

12

R - SOURCE RESISTANCE ( )

NF

- N

OIS

E F

IGU

RE

(dB

)

I = 100 mmAC

I = 1.0 mAC

S

I = 50 mmAC

I = 5.0 mAC

- DE

GR

EE

S

0

406080100120140160

20

180

Current Gain and Phase Anglevs Frequency

1 10 100 100005

101520253035404550

f - FREQUENCY (MHz)

h

- C

UR

RE

NT

GA

IN (d

B)

qq

V = 40VCEI = 10 mAC

h fe

fe

Power Dissipation vsAmbient Temperature

0 25 50 75 100 125 1500

0.25

0.5

0.75

1

TEMPERATURE ( C)

P

- PO

WE

R D

ISS

IPA

TIO

N (W

)D

o

SOT-223

SOT-23

TO-92

2N3904 / M

MB

T3904 / MM

PQ

3904 / PZT3904



Turn-On Time vs Collector Current

Pr23

1 10 1005

10

100

500


TIM

E (

nS)

I = I = B1

C

B2I c10

40V

15V

2.0V

t @ V = 0VCBd

t @ V = 3.0VCCr

Rise Time vs Collector Current

Pr23

1 10 1005

10

100

500


t -

RIS

E T

IME

(ns

)

I = I = B1

C

B2I c10

T = 125C

T = 25CJ

V = 40VCC

r

J

Storage Time vs Collector Current

Pr23

1 10 1005

10

100

500


t -

STO

RA

GE

TIM

E (

ns) I = I = B1

C

B2I c10

S

T = 125C

T = 25CJ

J

Fall Time vs Collector Current

Pr23

1 10 1005

10

100

500


t -

FA

LL T

IME

(ns

)

I = I = B1

C

B2I c10

V = 40VCC

f

T = 125C

T = 25CJ

J

2N3904 / M

MB

T3904 / MM

PQ

3904 / PZT3904


Test Circuits

10 K

3.0 V

275

t1

C1 < 4.0 pF

Duty Cycle = 2%

Duty Cycle = 2%

< 1.0 ns

- 0.5 V

300 ns10.6 V

10 < t1 < 500 s 10.9 V

- 9.1 V

< 1.0 ns

0

0

10 K

3.0 V

275

C1 < 4.0 pF

1N916

FIGURE 2: Storage and Fall Time Equivalent Test Circuit

FIGURE 1: Delay and Rise Time Equivalent Test Circuit



New Product

Small Signal Transistor (PNP)

Features PNP Silicon Epitaxial Planar Transistor for

switching and amplifier applications. As complementary type, the NPN transistor

2N3904 is recommended. On special request, this transistor is also

manufactured in the pin configuration TO-18. This transistor is also available in the SOT-23 case

with the type designation MMBT3906.

Mechanical DataCase: TO-92 Plastic PackageWeight: approx. 0.18gPackaging Codes/Options:

E6/Bulk 5K per container, 20K/boxE7/4K per Ammo mag., 20K/box

Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector-Emitter Voltage VCEO 40 VCollector-Base Voltage VCBO 40 VEmitter-Base Voltage VEBO 5.0 VCollector Current IC 200 mA

Power Dissipation TA = 25C Ptot 625 mWTC = 25C 1.5 W Thermal Resistance Junction to Ambient Air RJA 250(1) C/WJunction Temperature Tj 150 CStorage Temperature Range TS 65 to +150 C

Note: (1) Valid provided that leads are kept at ambient temperature.

0.181 (4.6)

min

. 0.

492

(12.5)

0.18

1 (4.

6)

0.142 (3.6)

0.098 (2.5)

max. 0.022 (0.55)

Bottom View

TO-226AA (TO-92)

Dimensions in inchesand (millimeters)


www.vishay.com Document Number 881142 07-May-02

Electrical Characteristics (TJ = 25C unless otherwise noted)Parameter Symbol Test Condition Min Typ Max Unit

-VCE = 1 V, -IC = 0.1 mA 60 -VCE = 1 V, -IC = 1 mA 80

DC Current Gain hFE -VCE = 1 V, -IC = 10 mA 100 300 -VCE = 1 V, -IC = 50 mA 60 -VCE = 1 V, -IC = 100 mA 30

Collector-Emitter Cutoff Current -ICEV -VEB = 3 V, -VCE = 30 V 50 nAEmitter-Base Cutoff Current -IEBV -VEB = 3 V, -VCE = 30 V 50 nA

Collector Saturation Voltage -VCEsat -IC = 10 mA, -IB = 1 mA 0.25 V-IC = 50 mA, -IB = 5 mA 0.4

Base Saturation Voltage -VBEsat -IC = 10 mA, -IB = 1 mA 0.85 V-IC = 50 mA, -IB = 5 mA 0.95

Collector-Emitter Breakdown Voltage -V(BR)CEO -IC = 1 mA, IB = 0 40 VCollector-Base Breakdown Voltage -V(BR)CBO -IC = 10 A, IE = 0 40 VEmitter-Base Breakdown Voltage -V(BR)EBO -IE = 10 A, IC = 0 5 V

Input Impedance hie -VCE = 10 V, -IC = 1 mA, 1 10 kf = 1 kHz

Voltage Feedback Ratio hre -VCE = 10 V, -IC = 1 mA, 0.5 10-4 8 10-4 f = 1 kHz

Current Gain-Bandwidth Product fT -VCE = 20 V, -IC = 10 mA 250 MHzf = 100 MHzCollector-Base Capacitance CCBO -VCB = 5 V, f = 100 kHz 4.5 pFEmitter-Base Capacitance CEBO -VEB = 0.5 V, f = 100 kHz 10 pF

Small Signal Current Gain hfe -VCE = 10 V, -IC = 1 mA 100 400 f = 1 kHz

Output Admittance hoe -VCE = 1 V, -IC = 1 mA 1 40 Sf = 1 kHz



Electrical Characteristics (TJ = 25C unless otherwise noted)Parameter Symbol Test Condition Min Typ Max Unit

Noise Figure F -VCE = 5 V, -IC = 100 A, 4 dBRG = 1 k, f = 10...15000 HzDelay Time (see fig. 1) td -IB1 = 1 mA, -IC = 10 mA 35 nsRise Time (see fig. 1) tr -IB1 = 1 mA, -IC = 10 mA, 35 ns

Storage Time (see fig. 2) ts IB1 = -IB2 = 1 mA, 225 ns-IC = 10 mA

Fall Time (see fig. 2) tf IB1 = -IB2 = 1 mA, 75 ns-IC = 10 mA

Fig. 2: Test circuit for storage and fall time* total shunt capacitance of test jig and connectors

Fig. 1: Test circuit for delay and rise time* total shunt capacitance of test jig and connectors

2N3906 / M

MB

T3906 / MM

PQ

3906 / PZT3906

NDiscrete POWER & Signal

Technologies

PNP General Purpose Amplifier

This device is designed for general purpose amplifier and switch-ing applications at collector currents of 10 A to 100 mA. Sourcedfrom Process 66.


*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.NOTES :1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

2N3906

PZT3906MMPQ3906

MMBT3906

Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 V

VCBO Collector-Base Voltage 40 V

VEBO Emitter-Base Voltage 5.0 V

IC Collector Current - Continuous 200 mA

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C

CB E

TO-92

BC

C

SOT-223

E

C

B

E

SOT-23Mark: 2A

CC

CC

CC

C C

SOIC-16

EB

EB

EB

E B

2N3906 / M

MB

T3906 / MM

PQ

3906 / PZT3906



OFF CHARACTERISTICS

ON CHARACTERISTICS


SWITCHING CHARACTERISTICS (except MMPQ3906)

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

Spice Model

V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 40 VV(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 VIBL Base Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA

ICEX Collector Cutoff Current VCE = 30 V, VBE = 3.0 V 50 nA

hFE DC Current Gain * IC = 0.1 mA, VCE = 1.0 VIC = 1.0 mA, VCE = 1.0 VIC = 10 mA, VCE = 1.0 VIC = 50 mA, VCE = 1.0 VIC = 100 mA, VCE = 1.0 V

60801006030

300

VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA

0.250.4

VV

VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mAIC = 50 mA, IB = 5.0 mA

0.65 0.850.95

VV


250 MHz

Cobo Output Capacitance VCB = 5.0 V, IE = 0,f = 100 kHz

4.5 pF

Cibo Input Capacitance VEB = 0.5 V, IC = 0,f = 100 kHz

10.0 pF

NF Noise Figure (except MMPQ3906) IC = 100 A, VCE = 5.0 V,RS =1.0k, f=10 Hz to 15.7 kHz

4.0 dB

td Delay Time VCC = 3.0 V, VBE = 0.5 V, 35 ns

tr Rise Time IC = 10 mA, IB1 = 1.0 mA 35 ns

ts Storage Time VCC = 3.0 V, IC = 10mA 225 ns

tf Fall Time IB1 = IB2 = 1.0 mA 75 ns

PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4Vtf=4 Xtf=6 Rb=10)

PNP General Purpose Amplifier(continued)

2N3906 / M

MB

T3906 / MM

PQ

3906 / PZT3906

Thermal Characteristics TA = 25C unless otherwise noted

Symbol Characteristic Max Units2N3906 *PZT3906


6255.0

1,0008.0

mWmW/C

RqJC Thermal Resistance, Junction to Case 83.3 C/W

RqJA Thermal Resistance, Junction to Ambient 200 125 C/W

Symbol Characteristic Max Units**MMBT3906 MMPQ3906


3502.8

1,0008.0

mWmW/C

RqJA Thermal Resistance, Junction to AmbientEffective 4 DieEach Die

357125240

C/WC/WC/W



Base Emitter ON Voltage vsCollector Current

Pr66

0.1 1 10 250

0.2

0.4

0.6

0.8

1


-

BA

SE

EM

ITTE

R O

N V

OLT

AG

E (V

)

C

BE

ON

V = 1VCE

25 C

- 40 C

125 C


0.1 0.2 0.5 1 2 5 10 20 50 10050

100

150

200

250


- TY

PIC

AL

PU

LSE

D C

UR

RE

NT

GA

IN

C

FE

125 C

25 C

- 40 C

Vce = 1V

*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.**Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."


Pr66

1 10 100 2000

0.2

0.4

0.6

0.8

1


V

-

BA

SE

EM

ITTE

R V

OLT

AG

E (V

)

C

BE

SA

T

bb = 10

25 C

- 40 C

125 C


Pr66

1 10 100 2000

0.05

0.1

0.15

0.2

0.25

0.3

I - COLLECTOR CURRENT (mA)CCE

SA

T

25 C

- 40 C

125 C

bb = 10

2N3906 / M

MB

T3906 / MM

PQ

3906 / PZT3906



Collector-Cutoff Currentvs. Ambient Temperature

Pr66

25 50 75 100 1250.01

0.1

1

10

100


I

- CO

LLE

CTO

R C

UR

RE

NT

(nA

)

A

CB

O

V = 25VCB

Common-Base Open Circuit Input and Output Capacitance

vs Reverse Bias Voltage

0.1 1 100

2

4

6

8

10


CA

PA

CIT

AN

CE

(pF)

C obo

C ibo

Noise Figure vs Frequency

Pr66

0.1 1 10 1000

1

2

3

4

5

6

f - FREQUENCY (kHz)

NF

- N

OIS

E F

IGU

RE

(dB

)

I = 100 mmA, R = 200 WWC

V = 5.0VCE

S

I = 100 mmA, R = 2.0 k WWC S

I = 1.0 mA, R = 200 WWC S

kWW

Noise Figure vs Source Resistance

Pr66

0.1 1 10 1000

2

4

6

8

10

12

R - SOURCE RESISTANCE ( )

NF

- N

OIS

E F

IGU

RE

(dB

)

I = 100 mmAC

V = 5.0Vf = 1.0 kHz

CE

I = 1.0 mAC

S

Switching Timesvs Collector Current

Pr66

1 10 1001

10

100

500


TIM

E (

nS)

I = I =

t r

t s

B1

C

B2I c10

t f

t d

Turn On and Turn Off Timesvs Collector Current

Pr66

1 10 1001

10

100

500


TIM

E (

nS)

I = I =

t off

B1

C

B2I c10

t on

V = 0.5VBE(OFF)

t I = on

t off

B1I c10

2N3906 / M

MB

T3906 / MM

PQ

3906 / PZT3906




0 25 50 75 100 125 1500

0.25

0.5

0.75

1

TEMPERATURE ( C)

P

- PO

WE

R D

ISS

IPA

TIO

N (W

)D

o

SOT-223

SOT-23

TO-92

2N4403 / M

MBT4403

Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 600 mATJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C

PNP General Purpose AmplifierThis device is designed for use as a general purpose amplifierand switch requiring collector currents to 500 mA.


*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:1) These ratings are based on a maximum junction temperature of 150 degrees C.2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

2N4403

CB E

TO-92

MMBT4403

C

B

E

SOT-23Mark: 2T

Thermal Characteristics TA = 25C unless otherwise notedSymbol Characteristic Max Units

2N4403 *MMBT4403PD Total Device Dissipation

Derate above 25C6255.0

3502.8

mWmW/C

RJC Thermal Resistance, Junction to Case 83.3 C/WRJA Thermal Resistance, Junction to Ambient 200 357 C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2001 Fairchild Semiconductor Corporation 2N4403/MMBT4403, Rev. C

2N4403 / M

MBT4403


OFF CHARACTERISTICS

ON CHARACTERISTICS


SWITCHING CHARACTERISTICStd Delay Time VCC = 30 V, IC = 150 mA, 15 nstr Rise Time IB1 = 15 mA 20 nsts Storage Time VCC = 30 V, IC = 150 mA 225 nstf Fall Time IB1 = IB2 = 15 mA 30 ns

*Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%


V(BR)CEO Collector-Emitter BreakdownVoltage*

IC = 1.0 mA, IB = 0 40 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 0.1 mA, IE = 0 40 VV(BR)EBO Emitter-Base Breakdown Voltage IE = 0.1 A, IC = 0 5.0 VIBEX Base Cutoff Current VCE = 35 V, VEB = 0.4 V 0.1 AICEX Collector Cutoff Current VCE = 35 V, VBE = 0.4 V 0.1 A

hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 VIC = 1.0 mA, VCE = 1.0 VIC = 10 mA, VCE = 1.0 VIC = 150 mA, VCE = 2.0 V*IC = 500 mA, VCE = 2.0 V*

3060

10010020

300

VCE(sat) Collector-Emitter SaturationVoltage*

IC = 150 mA, IB = 15 mAIC = 500 mA, IB = 50 mA

0.40.75

VV

VBE(sat) Base-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA*IC = 500 mA, IB = 50 mA

0.75 0.951.3

VV



200 MHz

Ccb Collector-Base Capacitance VCB = 10 V, IE = 0,f = 140 kHz

8.5 pF

Ceb Emitter-Base Capacitance VBE = 0.5 V, IC = 0,f = 140 kHz

30 pF

hie Input Impedance IC = 1.0 mA, VCE = 10 V,f = 1.0 kHz

1.5 15 k

hre Voltage Feedback Ratio IC = 1.0 mA, VCE = 10 V,f = 1.0 kHz

0.1 8.0 x 10-4

hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V,f = 1.0 kHz

60 500

hoe Output Admittance IC = 1.0 mA, VCE = 10 V,f = 1.0 kHz

1.0 100 mhos



0.1 0.3 1 3 10 30 100 3000

100

200

300

400

500


- TY

PICA

L PU

LSED

CUR

REN

T G

AIN

C

FE

125 C

25 C

- 40 C

V = 5VCE

Input and Output Capacitancevs Reverse Bias Voltage

0.1 1 10 500

4

8

12

16

20


CAPA

CITA

NCE

(pF)

C ob

C ib

Collector-Cutoff Currentvs Ambient Temperature

25 50 75 100 1250.01

0.1

1

10

100


I - C

OLL

ECT

OR

CU

RREN

T (nA

)

A

CBO

V = 35VCB


1 10 100 5000

0.1

0.2

0.3

0.4

0.5

I - COLLECTOR CURRENT (mA)V - CO

LLEC

TOR

EMIT

TER

VOLT

AG

E (V)

C

CESA

T

= 10

25 C

- 40 C125 C


1 10 100 5000

0.2

0.4

0.6

0.8

1


V - BA

SE EM

ITTE

R VO

LTA

GE

(V)

C

BES

AT

25 C

- 40 C

125 C

= 10

Base Emitter ON Voltage vsCollector Current

0.1 1 10 250

0.2

0.4

0.6

0.8

1

I - COLLECTOR CURRENT (mA)V - B

ASE

EMIT

TER

O

N VO

LTA

GE

(V)

C

BE(O

N)

V = 5VCE

25 C

- 40 C

125C


2N4403 / M

MBT4403


Switching Timesvs Collector Current

10 100 10000

50

100

150

200

250


TIM

E (n

S)

I = I =

t r

t s

B1

C

B2I c10

V = 15 Vcc

t f

t d

Turn On and Turn Off Timesvs Collector Current

10 100 10000

100

200

300

400

500


TIM

E (n

S)

I = I =

t on

t off

B1

C

B2I c10

V = 15 Vcc


0 25 50 75 100 125 1500

0.25

0.5

0.75

1

TEMPERATURE ( C)

P - PO

WER

DIS

SIPA

TION

(W)

D

o

SOT-223TO-92

SOT-23

Rise Time vs Collectorand Turn On Base Currents

10 100 5001

2

5

10

20

50


I - TU

RN

0N

B

ASE

CUR

REN

T (m

A)

30 ns

C

t = 15 Vr

B1

60 ns


2N4403 / M

MBT4403

Typical Common Emitter Characteristics (f = 1.0kHz)

Common Emitter Characteristics

1 2 5 10 20 500.1

0.2

0.5

1

2

5

I - COLLECTOR CURRENT (mA)CHA

R. RE

LATI

VE TO

VA

LUES

AT

I =

-10

mA

V = -10 VCE

C

C

T = 25 CA o

hoe

hre

h fe

h ie

_ _ _ _ _ _


-20-16-12-8-40.8

0.9

1

1.1

1.2

1.3

V - COLLECTOR VOLTAGE (V)CH

AR.

R

ELAT

IVE

TO VA

LUES

AT

V

= -10

V

I = -10mAC

CE

CE

T = 25 CA o

hoe h and hre

h fe

h ie

oe h fe h ie h re


-40 -20 0 20 40 60 80 1000.50.60.70.80.9

1

1.1

1.21.31.4

1.5


CHAR

. RE

LATI

VE TO

VA

LUES

AT

T

=

25

C

V = -10 VCE

A

A

hoe

h re

h fe

h ie

o

o

I = -10mAC h fe h ie hre hoe


2N4403 / M

MBT4403

Test Circuits

FIGURE 1: Saturated Turn-On Switching Time Test Circuit

FIGURE 2: Saturated Turn-Off Switching Time Test Circuit

1.0 K

- 6.0 V1.5 V

1.0 K

- 30 V

0

200ns

200ns

- 16 V

0

50

200

1 K 37

50

- 30 V

NOTE: BVEBO = 5.0 V


2N4403 / M

MBT4403

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theuser.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety oreffectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

Formative orIn Design

First Production

Full Production

Not In Production

OPTOLOGICOPTOPLANARPACMANPOPPower247PowerTrenchQFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHER

FASTFASTrFRFETGlobalOptoisolatorGTOHiSeCISOPLANARLittleFETMicroFETMicroPakMICROWIRE

Rev. H4

ACExBottomlessCoolFETCROSSVOLTDenseTrenchDOMEEcoSPARKE2CMOSTMEnSignaTMFACTFACT Quiet Series

SMART STARTSTAR*POWERStealthSuperSOT-3SuperSOT-6SuperSOT-8SyncFETTinyLogicTruTranslationUHCUltraFET

STAR*POWER is used under license

VCX

N o v e m b e r 1 9 9 5

2N7000 / 2N7002 / NDS7002A N - C h a n n e l Enhancement Mode Field Effect Transistor

General Description Features

_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _

Absolute Maximum Ratings T A = 25C unless otherwise notedSymbol P a r a m e t e r 2N7000 2N7002 NDS7002A Units

V DSS Drain-Source Voltage 60 V

V DGR D r a i n - G a t e V o l t a g e ( R G S < 1 M W ) 60 V

V GSS Gate-Source Voltage - Continuous 20 V

- Non Repetitive (tp < 50s) 40I D Maximum Drain Current - Continuous 200 115 280 m A

- Pulsed 500 800 1500P D Maximum Power Dissipation 400 200 300 m W

Derated above 25 o C 3.2 1.6 2.4 m W / CT J , T STG Operating and Storage Temperature Range -55 to 150 -65 to 150 C

T L Maximum Lead Temperature for SolderingP u r p o s e s , 1 / 1 6 " f r o m C a s e f o r 1 0 S e c o n d s

300 C

THERMAL CHARACTERISTICS

R qJ AT h e r m a l R e s i s t a n c e , J u n c t i o n - t o - A m b i e n t 312.5 625 417 C / W

2N7000 .SAM Rev. A1

These N -C h a n n e l e n h a n c e m e n t m o d e f i e l d e f f e c t t r a n s i s t o r sare produced using Fairchild's proprietary, high cell density,DMOS technology. These products have been designed tominimize on-state resistance while provide rugged, reliable,and fast switching performance. They can be used in mostapplications requiring up to 400mA DC and can deliverpulsed currents up to 2A. These products are particularlysuited for low voltage, low current applications such as smallservo motor control, power MOSFET gate drivers, and otherswitching applications.

High density cell design for low R DS(ON) .

V o l t a g e c o n t r o l l e d s m a l l s i g n a l s w i t c h .

Rugged and reliable.

High saturation current capability.

S

D

G

SGD

TO- 9 2

1997 Fairchild Semiconductor Corporation

2N7000 (TO-236AB)

2N7002/NDS7002A

Electrical Characteristics T A = 25C unless otherwise notedSymbol P a r a m e t e r Conditions Typ e Min Typ M a x Units

OFF CHARACTERISTICS

B V DSS Drain-Source Breakdown Voltage V GS = 0 V , I D = 1 0 A All 60 V

I DSS Zero Gate Voltage Drain Current V DS = 48 V , V GS = 0 V 2N 7000 1 A

T J =125C 1 m AV DS = 60 V , V GS = 0 V 2N 7002

NDS7002A1 A

T J =125C 0.5 m AI GSSF Gate - Body Leakage, Forward V GS = 15 V , V DS = 0 V 2N7000 10 n A

V GS = 20 V , V DS = 0 V 2N7002NDS7002A

100 n A

I GSSR Gate - Body Leakage, Reverse V GS = -15 V , V DS = 0 V 2N 7000 -10 n AV GS = -20 V , V DS = 0 V 2N7002

NDS7002A-100 n A

ON CHARACTERISTICS (Note 1)

V GS ( t h ) Gate Threshold Voltage V DS = V GS , I D = 1 m A 2N7000 0.8 2.1 3 V

V DS = V GS , I D = 250 A 2N7002NDS7002A

1 2.1 2.5

R DS(ON) Static Drain-Source On-Resistance V GS = 10 V , I D = 5 0 0 m A 2N7000 1.2 5 WT J =125C 1.9 9

V GS = 4.5 V , I D = 7 5 m A 1.8 5.3V GS = 10 V , I D = 5 0 0 m A 2N7002 1.2 7.5

T J =100C 1.7 13.5V GS = 5.0 V , I D = 5 0 m A 1.7 7.5

T J =100C 2.4 13.5V GS = 10 V , I D = 5 0 0 m A NDS7002 A 1.2 2

T J =125C 2 3.5V GS = 5.0 V , I D = 5 0 m A 1.7 3

T J =125C 2.8 5V DS(ON) Drain-Source On-Voltage V GS = 10 V , I D = 5 0 0 m A 2N7000 0.6 2.5 V

V GS = 4.5 V , I D = 7 5 m A 0.14 0.4V GS = 10 V , I D = 5 0 0 m A 2N7002 0.6 3.75V GS = 5.0 V , I D = 5 0 m A 0.09 1.5V GS = 10 V , I D = 5 0 0 m A NDS7002A 0.6 1V GS = 5.0 V , I D = 5 0 m A 0.09 0.15

2N7000 .SAM Rev. A1

Electrical Characteristics T A = 25 o C unless otherwise notedSymbol P a r a m e t e r Conditions Typ e Min Typ M a x UnitsON CHARACTERISTICS Continued (Note 1)I D(ON) On-State Drain Current V GS = 4.5 V , V DS = 10 V 2N7000 75 600 m A

V GS = 1 0 V , V DS > 2 V D S ( o n ) 2N7002 500 2700V GS = 1 0 V , V DS > 2 V D S ( o n ) NDS7002A 500 2700

g F S Forward Transconductance V DS = 1 0 V , I D = 2 0 0 m A 2N7000 100 320 m SV DS > 2 V D S ( o n ) , I D = 2 0 0 m A 2N7002 80 320V DS > 2 V D S ( o n ) , I D = 2 0 0 m A NDS7002A 80 320

DYNAMIC CHARACTERISTICSC iss Input Capacitance V DS = 2 5 V , V GS = 0 V ,

f = 1.0 MHzAll 20 50 pF

C oss Output Capacitance All 11 25 pFC rss Reverse Transfer Capacitance All 4 5 pFt o n Turn-On Time V DD = 15 V , R L = 25 W ,

I D = 5 0 0 m A , V GS = 1 0 V , R GEN = 25

2N7000 10 n s

V DD = 30 V , R L = 150 W ,I D = 2 0 0 m A , V GS = 1 0 V ,R GEN = 25 W

2N700NDS7002A

20

t o f f T u r n - O f f T i m e V DD = 15 V , R L = 25 W , I D = 5 0 0 m A , V GS = 1 0 V , R GEN = 25

2N7000 10 n s

V DD = 30 V , R L = 150 W ,I D = 2 0 0 m A , V GS = 1 0 V ,R GEN = 25 W

2N700NDS7002 A

20

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGSI S Maximum Continuous Drain-Source Diode Forward Current 2N7002 115 m A

NDS7002A 280I S M Maximum Pulsed Drain-Source Diode Forward Current 2N7002 0.8 A

NDS7002A 1.5V SD Drain-Source Diode Forward

VoltageV GS = 0 V , I S = 1 1 5 m A (Note 1) 2N7002 0.88 1.5 VV GS = 0 V , I S = 4 0 0 m A (Note 1) NDS7002 A 0.88 1.2

Note:1. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.

2N7000 .SAM Rev. A1

infoTypewriter2

infoTypewriter2

2N7000 .SAM Rev. A1

0 1 2 3 4 50

0 .5

1

1 .5

2

V , D R A I N - S O U R C E V O L T A G E ( V )

I , DRAIN-SOURCE CURRENT (A)

9 . 0

4 . 0

8 . 0

3.0

7.0

V = 1 0 V G S

D S

D

5 . 0

6 . 0

-5 0 -2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 00 . 5

0 . 7 5

1

1 . 2 5

1 . 5

1 . 7 5

2

T , J U N C T I O N T E M P E R A T U R E ( C )

DRAIN-SOURCE ON-RESISTANCE

J

R , NORMALIZEDDS(ON)

V = 1 0 V G SI = 5 0 0 m AD

- 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 00 .8

0 .8 5

0 .9

0 .9 5

1

1 .0 5

1 .1

T , J U N C T I O N T EM PERA T U R E ( C )

GATE-SOURCE THRESHOLD VOLTAGE

J

I = 1 m ADV = V D S G S

V , NORMALIZED th

0 0 . 4 0 . 8 1 . 2 1 . 6 20 . 5

1

1 . 5

2

2 . 5

3

I , D R A I N C U R R E N T ( A )


V = 4 .0 V G S

D

R , NORMALIZED DS(on)

7 .0

4 .5

1 0

5 .0

6 .0

9 .08 .0

0 0 . 4 0 . 8 1 . 2 1 . 6 20

0 . 5

1

1 . 5

2

2 . 5

3

I , D R A I N C U R R E N T ( A )


T = 1 2 5 CJ

2 5 C

- 5 5 C

D

V = 1 0 V G S

R , NORMALIZEDDS(on)

Typical Electrical Characteristics

Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation wit h GateVoltage and Drain Current

Figure 3. On-Resistance Variationwith Temperature

Figure 4. On-Resistance Variation with DrainCurrent and Temperature

Figure 5. Transfer Characteristics Figure 6. Gate Threshold Variation withTemperature

0 2 4 6 8 1 00

0 . 4

0 . 8

1 . 2

1 . 6

2

V , G A T E T O S O U R C E V O L T A G E ( V )

I , DRAIN CURRENT (A)

V = 1 0 VD S

G S

D

T = - 5 5 C J 2 5 C1 2 5 C

2N7000 / 2N7002 / NDS7002A

2N7000 .SAM Rev. A1

- 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 00 . 9 2 5

0 . 9 5

0 . 9 7 5

1

1 . 0 2 5

1 . 0 5

1 . 0 7 5

1 . 1

T , J U N C T I O N T E M PERA T U R E ( C )

DRAIN-SOURCE BREAKDOWN VOLTAGE

J

BV , NORMALIZEDD S S

I = 2 5 0 AD

0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .40 .0 0 1

0 .0 0 5

0 .0 1

0 .0 5

0 .1

0 .5

1

2

V , B O D Y D I O D E F O R W A R D V O L T A G E (V )

I , REVERSE DRAIN CURRENT (A)

V = 0 V G S

T = 1 2 5 CJ

S D

S

2 5 C

- 5 5 C

0 0 .4 0 .8 1 .2 1 .6 20

2

4

6

8

1 0

Q , G A T E CH A R G E (n C )

V , GATE-SOURCE VOLTAGE (V)

g

GS

I = 5 0 0 m AD

V = 2 5 VD S

1 1 5 m A

2 8 0 m A

1 2 3 5 1 0 2 0 3 0 5 01

2

5

1 0

2 0

4 0

6 0

V , D R A I N T O S O U R C E V O L T A G E ( V )

CAPACITANCE (pF)

D S

C i s s

f = 1 M H zV = 0 V G S

C o s s

C r s s

G

D

S

V D D

R LV

V

I N

O U T

V G SD U TR GEN

10%

50%

90%

10%

90%

90%

50%Input, Vin

Output, Vout

t on tofftd(off) t ftrt d(on)

Inverted10%

Pulse Width

Figure 7. Breakdown Voltage Variationwith Temperature

Figure 8. Body Diode Forward Voltage Variation with

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics

Figure 11. Figure 12. Switching Waveforms

Typical Electrical Characteristics (continued)2N7000 / 2N7002 /NDS7002A

2N7000 .SAM Rev. A1

0.0001 0.001 0.01 0.1 1 10 100 3000.001

0.002

0.01

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRAN

SIEN

T TH

ERM

AL RE

SIST

ANCE

r(t)

, NO

RM

ALI

ZE

D E

FF

EC

TIV

E

1

S i n g l e Pu l s e

D = 0 . 5

0 . 1

0 .0 5

0 .0 2

0 .0 1

0 .2

D u t y C y c l e , D = t / t 1 2

R (t) = r ( t ) * R R = ( S e e D a t a s h e e t )

qJ AqJ AqJ A

T - T = P * R (t) qJAAJ

P ( p k )

t 1 t 2

0.0001 0.001 0.01 0.1 1 10 100 3000.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRAN

SIEN

T TH

ERM

AL RE

SIST

ANCE

r(t)

, NO

RM

ALI

ZE

D E

FF

EC

TIV

E

1

S i n g l e Pu l s e

D = 0 .5

0 . 1

0 . 0 5

0 . 0 2

0 . 0 1

0 .2

D u t y C y c l e , D = t / t 1 2

R (t) = r ( t ) * R R = ( S e e D a t a s h e e t )

qJ AqJ AqJ A

T - T = P * R (t) qJAAJ

P ( p k )

t 1 t 2

1 2 5 1 0 2 0 3 0 6 0 8 00 . 0 0 5

0 . 0 1

0 . 0 5

0 . 1

0 . 5

1

23



D S

D

V = 1 0 VS I N G L E PU L S ET = 2 5 C

G S

A

R D S ( O N ) L i m i t

1 0 0 m s

1 m s1 0 m s

D C

1 s

1 0 0 u s

1 0 s

F i g u r e 1 6 . T O - 9 2 , 2 N 7 0 0 0 T r a n s i e n t T h e r m a l R e s p o n s e C u r v e

F i g u r e 1 7 . S O T - 2 3 , 2 N 7 0 0 2 / N D S 7 0 0 2 A T r a n s i e n t T h e r m a l R e s p o n s e C u r v e

1 2 5 1 0 2 0 3 0 6 0 8 00 . 0 0 5

0 . 0 1

0 . 0 5

0 . 1

0 . 5

1

23



D S

D

V = 1 0 VS I N G L E PU L S ET = 2 5 C

G S

A


1 0 0 m s

1 m s

1 0 m s

D C

1 s1 0 s

1 0 0 u s

1 2 5 1 0 2 0 3 0 6 0 8 00 . 0 0 5

0 . 0 1

0 . 0 5

0 . 1

0 . 5

1

23



D S

D V = 1 0 VS I N G L E PU L S ET = 2 5 C

G S

A


1 0 0 m s

1 m s

1 0 m s

D C

1 s1 0 s

1 0 0 u s

F i g u r e 1 3 . 2 N 7 0 0 0 M a x i m u mS a f e O p e r a t i n g A r e a

F i g u r e 1 4 . 2 N 7 0 0 2 M a x i m u mS a f e O p e r a t i n g A r e a

F i g u r e 1 5 . N D S 7 0 0 0 A M a x i m u mS a f e O p e r a t i n g A r e a

Typical Electrical Characteristics (continued)

TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FA I R C H I L D S P R O D U C T S A R E N O T A U T H O R I Z E D F O R U S E A S C R I T I C A L C O M P O N E N T S I N L I F E S U P P O RTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices orsystems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can bereasonably expected to result in significant injury to theu s e r.

2. A critical component is any component of a lifesupport device or system whose failure to perform canbe reasonably expected to cause the failure of the lifesupport device or system, or to affect its safety ore f f e c t i v e n e s s .

PRODUCT STATUS DEFINITIONS

D e f i n i t i o n o f Te r m s

D a t a s h e e t I d e n t i f i c a t i o n P r o d u c t S t a t u s D e f i n i t i o n

A d v a n c e I n f o r m a t i o n

Preliminary

No Identification Needed

O b s o l e t e

This datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.

This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improved e s i g n .

This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.

This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.

F o r m a t i v e o rI n D e s i g n

First Production

F u l l P r o d u c t i o n

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.

PowerTrenchQFETQSQT OptoelectronicsQuiet SeriesSILENT SWITCHERSMART STARTSuperSOT-3SuperSOT-6SuperSOT-8

FASTrGlobalOptoisolatorGTOHiSeCISOPLANARMICROWIREOPTOLOGICOPTOPLANARPACMANPOP

Rev. G

ACExBottomlessCoolFETCROSSVOLTDOMEE 2 CMOS TMEnSigna TMFACTFACT Quiet SeriesFAST

SyncFETTinyLogicUHCVCX

SDLS025B DECEMBER 1983 REVISED OCTOBER 2003

1POST OFFICE BOX 655303 DALLAS, TEXAS 75265

Package Options Include PlasticSmall-Outline (D, NS, PS), ShrinkSmall-Outline (DB), and Ceramic Flat (W)Packages, Ceramic Chip Carriers (FK), andStandard Plastic (N) and Ceramic (J) DIPs

Also Available as Dual 2-InputPositive-NAND Gate in Small-Outline (PS)Package

SN5400 . . . J PACKAGESN54LS00, SN54S00 . . . J OR W PACKAGE

SN7400, SN74S00 . . . D, N, OR NS PACKAGESN74LS00 . . . D, DB, N, OR NS PACKAGE

(TOP VIEW)

1234567

141312111098

1A1B1Y2A2B2Y

GND

VCC4B4A4Y3B3A3Y

SN5400 . . . W PACKAGE(TOP VIEW)

1234567

141312111098

1A1B1Y

VCC2Y2A2B

4Y4B4AGND3B3A3Y

SN74LS00, SN74S00 . . . PS PACKAGE(TOP VIEW)

1234

8765

VCC2B2A2Y

1A1B1Y

GND

3 2 1 20 19

9 10 11 12 13

45678

1817161514

4ANC4YNC3B

1YNC2ANC2B

1B 1A NC

3Y 3AV 4B

2YG

ND NC

SN54LS00, SN54S00 . . . FK PACKAGE(TOP VIEW)

CC

NC No internal connection

description/ordering informationThese devices contain four independent 2-input NAND gates. The devices perform the Boolean functionY = A B or Y = A + B in positive logic.

Copyright 2003, Texas Instruments Incorporated ! "#$ ! %#&'" ($)(#"! " !%$""! %$ *$ $! $+! !#$!!(( ,-) (#" %"$!!. ($! $"$!!'- "'#($$!. '' %$$!)

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

%(#"! "%' /0121 '' %$$! $ $!$(#'$!! *$,!$ $() '' *$ %(#"! %(#"%"$!!. ($! $"$!!'- "'#($ $!. '' %$$!)


2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265

description/ordering information (continued)

ORDERING INFORMATION

TA PACKAGEORDERABLE

PART NUMBERTOP-SIDEMARKING

SN7400N SN7400NPDIP N Tube SN74LS00N SN74LS00NPDIP N Tube

SN74S00N SN74S00NTube SN7400D

7400Tape and reel SN7400DR 7400

SOIC DTube SN74LS00D

LS00SOIC DTape and reel SN74LS00DR LS00

0C to 70C Tube SN74S00DS00

0 C to 70 CTape and reel SN74S00DR S00

SN7400NSR SN7400SOP NS Tape and reel SN74LS00NSR 74LS00SOP NS Tape and reel

SN74S00NSR 74S00

SOP PS Tape and reelSN74LS00PSR LS00

SOP PS Tape and reel SN74S00PSR S00SSOP DB Tape and reel SN74LS00DBR LS00

SNJ5400J SNJ5400JCDIP J Tube SNJ54LS00J SNJ54LS00JCDIP J Tube

SNJ54S00J SNJ54S00J

55C to 125CSNJ5400W SNJ5400W

55C to 125CCFP W Tube SNJ54LS00W SNJ54LS00WCFP W Tube

SNJ54S00W SNJ54S00W

LCCC FK TubeSNJ54LS00FK SNJ54LS00FK

LCCC FK TubeSNJ54S00FK SNJ54S00FK

Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelinesare available at www.ti.com/sc/package.

FUNCTION TABLE(each gate)

INPUTS OUTPUTA B

OUTPUTY

H H LL X HX L H

logic diagram, each gate (positive logic)A

BY



schematic00

GND

Y

130

VCC

4 k

A

1.6 k

1 k

B

VCC

Resistor values shown are nominal.

Y

GND

3 k

4 k

120 8 k20 k

1.5 k

12 k

A

B

2.8 k 900

BA

500 250

3.5 k

LS00 S00VCC

Y

GND

50



absolute maximum ratings over operating free-air temperature (unless otherwise noted)Supply voltage, VCC (see Note 1) 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage: 00, S00 5.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

LS00 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package thermal impedance, JA (see Note 2): D package 86C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DB package 96C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . N package 80C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NS package 76C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PS package 95C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, Tstg 65C to 150C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. Voltage values are with respect to network ground terminal.2. The package termal impedance is calculated in accordance with JESD 51-7.

recommended operating conditions (see Note 3)SN5400 SN7400

UNITMIN NOM MAX MIN NOM MAX UNIT

VCC Supply voltage 4.5 5 5.5 4.75 5 5.25 VVIH High-level input voltage 2 2 VVIL Low-level input voltage 0.8 0.8 VIOH High-level output current 0.4 0.4 mAIOL Low-level output current 16 16 mATA Operating free-air temperature 55 125 0 70 C

NOTE 3: All unused inputs of the device must be held at VCC or GND to ensure proper device operation. Refer to the TI application report,Implications of Slow or Floating CMOS Inputs, literature number SCBA004.

electrical characteristics over recommended operating free-air temperature range (unlessotherwise noted)

PARAMETER TEST CONDITIONSSN5400 SN7400

UNITPARAMETER TEST CONDITIONSMIN TYP MAX MIN TYP MAX UNIT

VIK VCC = MIN, II = 12 mA 1.5 1.5 VVOH VCC = MIN, VIL = 0.8 V, IOH = 0.4 mA 2.4 3.4 2.4 3.4 VVOL VCC = MIN, VIH = 2 V, IOL = 16 mA 0.2 0.4 0.2 0.4 VII VCC = MAX, VI = 5.5 V 1 1 mAIIH VCC = MAX, VI = 2.4 V 40 40 AIIL VCC = MAX, VI = 0.4 V 1.6 1.6 mAIOS VCC = MAX 20 55 18 55 mAICCH VCC = MAX, VI = 0 V 4 8 4 8 mAICCL VCC = MAX, VI = 4.5 V 12 22 12 22 mA

For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. All typical values are at VCC = 5 V, TA = 25C. Not more than one output should be shorted at a time.



switching characteristics, VCC = 5 V, TA = 25C (see Figure 1)

PARAMETER FROM(INPUT)TO

(OUTPUT) TEST CONDITIONSSN5400 SN7400 UNITPARAMETER (INPUT) (OUTPUT) TEST CONDITIONS

MIN TYP MAXUNIT(INPUT) (OUTPUT)

MIN TYP MAXtPLH A or B Y RL = 400 , CL = 15 pF

11 22ns

tPHLA or B Y RL = 400 , CL = 15 pF

7 15ns

recommended operating conditions (see Note 4)SN54LS00 SN74LS00





PARAMETER TEST CONDITIONSSN54LS00 SN74LS00


VIK VCC = MIN, II = 18 mA 1.5 1.5 VVOH VCC = MIN, VIL = MAX, IOH = 0.4 mA 2.5 3.4 2.7 3.4 V

VOL VCC = MIN, VIH = 2 VIOL = 4 mA 0.25 0.4 0.25 0.4 VVOL VCC = MIN, VIH = 2 V IOL = 8mA 0.35 0.5

V

II VCC = MAX, VI = 7 V 0.1 0.1 mAIIH VCC = MAX, VI = 2.7V 20 20 AIIL VCC = MAX, VI = 0.4 V 0.4 0.4 mAIOS VCC = MAX 20 100 20 100 mAICCH VCC = MAX, VI = 0 V 0.8 1.6 0.8 1.6 mAICCL VCC = MAX, VI = 4.5 V 2.4 4.4 2.4 4.4 mA




(OUTPUT) TEST CONDITIONSSN54LS00 SN74LS00 UNITPARAMETER (INPUT) (OUTPUT) TEST CONDITIONS


MIN TYP MAXtPLH A or B Y RL = 2 k, CL = 15 pF

9 15ns

tPHLA or B Y RL = 2 k, CL = 15 pF 10 15

ns



recommended operating conditions (see Note 5)SN54S00 SN74S00


VCC Supply voltage 4.5 5 5.5 4.75 5 5.25 VVIH High-level input voltage 2 2 VVIL Low-level input voltage 0.8 0.8 VIOH High-level output current 1 1 mAIOL Low-level output current 20 20 mATA Operating free-air temperature 55 125 0 70 C



PARAMETER TEST CONDITIONSSN54S00 SN74S00


VIK VCC = MIN, II = 18 mA 1.2 1.2 VVOH VCC = MIN, VIL = 0.8 V, IOH = 1 mA 2.5 3.4 2.7 3.4 VVOL VCC = MIN, VIH = 2 V, IOL = 20 mA 0.5 0.5 VII VCC = MAX, VI = 5.5 V 1 1 mAIIH VCC = MAX, VI = 2.7 V 50 50 AIIL VCC = MAX, VI = 0.5V 2 2 mAIOS VCC = MAX 40 100 40 100 mAICCH VCC = MAX, VI = 0 V 10 16 10 16 mAICCL VCC = MAX, VI = 4.5 V 20 36 20 36 mA




(OUTPUT) TEST CONDITIONSSN54S00SN74S00 UNITPARAMETER (INPUT) (OUTPUT) TEST CONDITIONS


MIN TYP MAXtPLH A or B Y RL = 280 , CL = 15 pF

3 4.5ns

tPHLA or B Y RL = 280 , CL = 15 pF 3 5

ns

tPLH A or B Y RL = 280 , CL = 50 pF4.5

nstPHL

A or B Y RL = 280 , CL = 50 pF 5ns



PARAMETER MEASUREMENT INFORMATIONSERIES 54/74 DEVICES

tPHL tPLH

tPLH tPHL

LOAD CIRCUITFOR 3-STATE OUTPUTS

High-LevelPulse

Low-LevelPulse

VOLTAGE WAVEFORMSPULSE DURATIONS

Input

Out-of-PhaseOutput

(see Note D)

3 V

0 V

VOL

VOH

VOH

VOL

In-PhaseOutput

(see Note D)

VOLTAGE WAVEFORMSPROPAGATION DELAY TIMES

VCC

RLTest Point

From OutputUnder Test

CL(see Note A)

LOAD CIRCUITFOR OPEN-COLLECTOR OUTPUTS

LOAD CIRCUITFOR 2-STATE TOTEM-POLE OUTPUTS

(see Note B)

VCC

RLFrom Output

Under Test

CL(see Note A)

TestPoint

(see Note B)

VCCRL


CL(see Note A)

TestPoint

1 k

NOTES: A. CL includes probe and jig capacitance.B. All diodes are 1N3064 or equivalent.C. Waveform 1 is for an output with internal conditions such that the output is low except when disabled by the output control.

Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.D. S1 and S2 are closed for tPLH, tPHL, tPHZ, and tPLZ; S1 is open and S2 is closed for tPZH; S1 is closed and S2 is open for tPZL.E. All input pulses are supplied by generators having the following characteristics: PRR 1 MHz, ZO 50 ; tr and tf 7 ns for Series

54/74 devices and tr and tf 2.5 ns for Series 54S/74S devices.F. The outputs are measured one at a time with one input transition per measurement.

S1

S2

tPHZ

tPLZtPZL

tPZH

3 V

3 V

0 V

0 V

thtsu

VOLTAGE WAVEFORMSSETUP AND HOLD TIMES

TimingInput

DataInput

3 V

0 V

OutputControl

(low-levelenabling)

Waveform 1(see Notes C

and D)


and D) 1.5 VVOH 0.5 V

VOL + 0.5 V

1.5 V

VOLTAGE WAVEFORMSENABLE AND DISABLE TIMES, 3-STATE OUTPUTS

1.5 V 1.5 V

1.5 V 1.5 V

1.5 V

1.5 V 1.5 V

1.5 V 1.5 V

1.5 V

1.5 V

tw

1.5 V 1.5 V

1.5 V 1.5 V

1.5 V 1.5 V

VOH

VOL

Figure 1. Load Circuits and Voltage Waveforms

!

" # $

# " %

&&

'

(

)

* *

* *

*+,&+

&+-+.,.

/0//1

123456 78739:98 ; ;7? =

SN5404, SN54LS04, SN54S04,SN7404, SN74LS04, SN74S04

HEX INVERTERS

SDLS029B DECEMBER 1983 REVISED FEBRUARY 2002


Dependable Texas Instruments Quality andReliability

descriptionThese devices contain six independent inverters.

Copyright 2002, Texas Instruments Incorporated

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

1234567

141312111098

1A1Y2A2Y3A3Y

GND

VCC6A6Y5A5Y4A4Y

SN5404 . . . J PACKAGESN54LS04, SN54S04 . . . J OR W PACKAGE

SN7404 . . . D, N, OR NS PACKAGESN74LS04 . . . D, DB, N, OR NS PACKAGE

SN74S04 . . . D OR N PACKAGE(TOP VIEW)

1234567

141312111098

1A2Y2A

VCC3A3Y4A

1Y6A6YGND5Y5A4Y

SN5404 . . . W PACKAGE(TOP VIEW)

3 2 1 20 19

9 10 11 12 13

45678

1817161514

6YNC5ANC5Y

2ANC2YNC3A

SN54LS04, SN54S04 . . . FK PACKAGE(TOP VIEW)

1Y 1A NC

4Y 4A6A

3YG

ND NC

NC No internal connection

V CC

PRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.

On products compliant to MIL-PRF-38535, all parameters are testedunless otherwise noted. On all other products, productionprocessing does not necessarily include testing of all parameters.

SN5404, SN54LS04, SN54S04,SN7404, SN74LS04, SN74S04HEX INVERTERS



ORDERING INFORMATION

TA PACKAGEORDERABLE

PART NUMBERTOP-SIDEMARKING

Tube SN7404N SN7404NPDIP N Tube SN74LS04N SN74LS04N

Tube SN74S04N SN74S04NTube SN7404D 7404Tube SN74LS04D

LS040C to 70C SOIC D Tape and reel SN74LS04DR

LS04

Tube SN74S04DS04

Tape and reel SN74S04DRS04

SOP NSTape and reel SN7404NSR SN7404

SOP NSTape and reel SN74LS04NSR 74LS04

SSOP DB Tape and reel SN74LS04DBR LS04Tube SN5404J SN5404JTube SNJ5404J SNJ5404J

CDIP JTube SN54LS04J SN54LS04J

CDIP JTube SN54S04J SN54S04JTube SNJ54LS04J SNJ54LS04J

55C to 125C Tube SNJ54S04J SNJ54S04JTube SNJ5404W SNJ5404W

CFP W Tube SNJ54LS04W SNJ54LS04WTube SNJ54S04W SNJ54S04W

LCCC FKTube SNJ54LS04FK SNJ54LS04FK

LCCC FKTube SNJ54S04FK SNJ54S04FK

Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelinesare available at www.ti.com/sc/package.

FUNCTION TABLE(each inverter)

INPUTA

OUTPUTY

H L

L H


HEX INVERTERS



logic diagram (positive logic)

1A

2A

3A

4A

5A

6A

1Y

2Y

3Y

4Y

5Y

6Y

Y = A




schematics (each gate)

Input A

VCC

Output Y

GND

130

1 k

1.6 k

04

4 k

InputA

VCC

OutputY

GND

20 k 120

LS04

8 k

12 k

1.5 k3 k

4 k

InputA

VCC

OutputY

GND

2.8 k 900

S04

50

3.5 k

250 500

Resistor values shown are nominal.


HEX INVERTERS



absolute maximum ratings over operating free-air temperature range (unless otherwise noted)Supply voltage, VCC (see Note 1) 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage, VI: 04, S04 5.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

LS04 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Package thermal impedance, JA (see Note 2): D package 86C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DB package 96C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . N package 80C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . NS package 76C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, Tstg 65C to 150C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. This are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. Voltage values are with respect to network ground terminal.2. The package thermal impedance is calculated in accordance with JESD 51-7.

recommended operating conditionsSN5404 SN7404SN5404 SN7404 UNIT

MIN NOM MAX MIN NOM MAXUNIT



PARAMETER TEST CONDITIONSSN5404 SN7404

UNITPARAMETER TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNIT

VIK VCC = MIN, II = 12 mA 1.5 1.5 VVOH VCC = MIN, VIL = 0.8 V, IOH = 0.4 mA 2.4 3.4 2.4 3.4 VVOL VCC = MIN, VIH = 2 V, IOL = 16 mA 0.2 0.4 0.2 0.4 VII VCC = MAX, VI = 5.5 V 1 1 mAIIH VCC = MAX, VI = 2.4 V 40 40 AIIL VCC = MAX, VI = 0.4 V 1.6 1.6 mAIOS VCC = MAX 20 55 18 55 mAICCH VCC = MAX, VI = 0 V 6 12 6 12 mAICCL VCC = MAX, VI = 4.5 V 18 33 18 33 mA




(OUTPUT) TEST CONDITIONSSN5404SN7404 UNIT(INPUT) (OUTPUT)

MIN TYP MAXtPLH A Y RL = 400 CL = 15 pF

12 22ns

tPHLA Y RL = 400 , CL = 15 F 8 15

ns




recommended operating conditionsSN54LS04 SN74LS04SN54LS04 SN74LS04 UNIT




PARAMETER TEST CONDITIONSSN54LS04 SN74LS04


VIK VCC = MIN, II = 18 mA 1.5 1.5 VVOH VCC = MIN, VIL = MAX, IOH = 0.4 mA 2.5 3.4 2.7 3.4 V

VOL VCC = MIN VIH = 2 VIOL = 4 mA 0.25 0.4 0.4 VVOL VCC = MIN, VIH = 2 V IOL = 8 mA 0.25 0.5

V

II VCC = MAX, VI = 7 V 0.1 0.1 mAIIH VCC = MAX, VI = 2.7 V 20 20 AIIL VCC = MAX, VI = 0.4 V 0.4 0.4 mAIOS VCC = MAX 20 100 20 100 mAICCH VCC = MAX, VI = 0 V 1.2 2.4 1.2 2.4 mAICCL VCC = MAX, VI = 4.5 V 3.6 6.6 3.6 6.6 mA

For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. All typical values are at VCC = 5 V, TA = 25C. Not more than one output should be shorted at a time and the duration of the short-circuit should not exceed one second.



(OUTPUT) TEST CONDITIONSSN54LS04SN74LS04 UNIT(INPUT) (OUTPUT)

MIN TYP MAXtPLH A Y RL = 2 k CL = 15 pF

9 15ns

tPHLA Y RL = 2 k, CL = 15 F 10 15

ns


HEX INVERTERS



recommended operating conditionsSN54S04 SN74S04SN54S04 SN74S04 UNIT


VCC Supply voltage 4.5 5 5.5 4.75 5 5.25 VVIH High-level input voltage 2 2 VVIL Low-level input voltage 0.8 0.8 VIOH High-level output current 1 1 mAIOL Low-level output current 20 20 mATA Operating free-air temperature 55 125 0 70 C


PARAMETER TEST CONDITIONSSN54S04 SN74S04


VIK VCC = MIN, II = 18 mA 1.2 1.2 VVOH VCC = MIN, VIL = 0.8 V, IOH = 1 mA 2.5 3.4 2.7 3.4 VVOL VCC = MIN, VIH = 2 V, IOL = 20 mA 0.5 0.5 VII VCC = MAX, VI = 5.5 V 1 1 mAIIH VCC = MAX, VI = 2.7 V 50 50 AIIL VCC = MAX, VI = 0.5 V 2 2 mAIOS VCC = MAX 40 100 40 100 mAICCH VCC = MAX, VI = 0 V 15 24 15 24 mAICCL VCC = MAX, VI = 4.5 V 30 54 30 54 mA

For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions. All typical values are at VCC = 5 V, TA = 25C. Not more than one output should be shorted at a time and the duration of the short-circuit should not exceed one second.



(OUTPUT) TEST CONDITIONSSN54S04SN74S04 UNIT(INPUT) (OUTPUT)

MIN TYP MAXtPLH A Y RL = 280 CL = 15 pF

3 4.5ns

tPHLA Y RL = 280 , CL = 15 F 3 5

ns

tPLH A Y RL = 280 CL = 50 pF4.5

nstPHL

A Y RL = 280 , CL = 50 F 5ns




PARAMETER MEASUREMENT INFORMATIONSERIES 54/74 AND 54S/74S DEVICES

tPHL tPLH

tPLH tPHL


High-LevelPulse

Low-LevelPulse


Input

Out-of-PhaseOutput

(see Note D)

3 V

0 V

VOL

VOH

VOH

VOL

In-PhaseOutput

(see Note D)


VCC

RLTest Point


CL(see Note A)



(see Note B)

VCC

RLFrom Output

Under Test

CL(see Note A)

TestPoint

(see Note B)

VCCRL


CL(see Note A)

TestPoint

1 k


Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.D. S1 and S2 are closed for tPLH, tPHL, tPHZ, and tPLZ; S1 is open and S2 is closed for tPZH; S1 is closed and S2 is open for tPZL.E. All input pulses are supplied by generators having the following characteristics: PRR 1 MHz, ZO 50 ; tr and tf 7 ns for Series

54/74 devices and tr and tf 2.5 ns for Series 54S/74S devices.F. The outputs are measured one at a time with one input transition per measurement.

S1

S2

tPHZ

tPLZtPZL

tPZH

3 V

3 V

0 V

0 V

thtsu

VOLTAGE WAVEFORMSSETUP AND HOLD TIMES

TimingInput

DataInput

3 V

0 V

OutputControl

(low-levelenabling)


and D)


and D) 1.5 VVOH 0.5 V

VOL + 0.5 V

1.5 V

VOLTAGE WAVEFORMSENABLE AND DISABLE TIMES, 3-STATE OUTPUTS

1.5 V 1.5 V

1.5 V 1.5 V

1.5 V

1.5 V 1.5 V

1.5 V 1.5 V

1.5 V

1.5 V

tw

1.5 V 1.5 V

1.5 V 1.5 V

1.5 V 1.5 V

VOH

VOL

Figure 1. Load Circuits and Voltage Waveforms


HEX INVERTERS



PARAMETER MEASUREMENT INFORMATIONSERIES 54LS/74LS DEVICES

tPHL tPLH

tPLH tPHL


High-LevelPulse

Low-LevelPulse


Input

Out-of-PhaseOutput

(see Note D)

3 V

0 V

VOL

VOH

VOH

VOL

In-PhaseOutput

(see Note D)


VCC

RLTest Point


CL(see Note A)



(see Note B)

VCC

RLFrom Output

Under Test

CL(see Note A)

TestPoint

(see Note B)

VCCRL


CL(see Note A)

TestPoint

5 k


Waveform 2 is for an output with internal conditions such that the output is high except when disabled by the output control.D. S1 and S2 are closed for tPLH, tPHL, tPHZ, and tPLZ; S1 is open and S2 is closed for tPZH; S1 is closed and S2 is open for tPZL.E. Phase relationships between inputs and outputs have been chosen arbitrarily for these examples.F. All input pulses are supplied by generators having the following characteristics: PRR 1 MHz,

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