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Electronic Properties of Ceramic Films Tim Jurasevich Advisor: Dr. Kvam

Electronic Properties of Ceramic Films Tim Jurasevich Advisor: Dr. Kvam

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Electronic Properties of Ceramic Films

Tim Jurasevich

Advisor: Dr. Kvam

Outline

Background Info Goals Procedure Results Conclusions

Perovskites

ABO3

Middle atom can move

Cubic above Curie temperature

Structure changes below Curie temperature

Permanent dipole

Conductive Metal Oxides

Conductive Middle atom won’t

move Not capacitive Ferroelectric

Fatigue

SrRuO3

Orthorhombic a = 5.57 Å b = 7.86 Å c = 5.54 Å

Nearly Tetragonal

LaNiO3

Rhombohedral a = 5.45 Å Low degree of tilt

Nearly Cubic

Research Goals

Create Strontium Ruthenate (SrRuO3) and Lanthanum Nickelate (LaNiO3) thin films

Sol-gel process Refine process Investigate properties of the thin films

Sol-gel process

SrRuO3 sol-gel RuCl3 Ethanol Water SrAc2

H2O2

Black More black

LaNiO3 sol-gel La(NO3)3

2-methoxyethanol MEA NiAc2

Dark Blue

Sol-gel process

Spin coatedSrRuO3 on Silicon

LaNiO3 on Glass

AnnealedSrRuO3 @ 800°C

LaNiO3 @ 700°C

Visual Inspection

Sputtering Platinum

Platinum stripes sputtered along the edges and in the middle

Lots of platinum required for good electrode

Optical Microscopy

X-Ray Diffraction

Sample 2 - SrRuO3 5 Layer

20 25 30 35 40 45 50 55 60 65 70 75 80

Inte

ns

ity

(A

.U.)

X-Ray Diffraction

Sample 6 - SrRuO3 5 Layer Low pH

20 25 30 35 40 45 50 55 60 65 70 75 80

Inte

nsi

ty (

A.U

.)

X-Ray Diffraction

LaNiO3

20 25 30 35 40 45 50 55 60 65 70 75 80

Inte

ns

ity

(A

.U.)

Resistivity

SrRuO3

ρ = 350 µΩ∙cm Ideal: 300 µΩ∙cm

LaNiO3

ρ = 700 µΩ∙cm Ideal: 600 µΩ∙cm

Conclusions

SrRuO3 and LaNiO3 can be prepared by sol-gel methods

Both thin films exhibit fairly low resistivities

Process variations affect crystallographic texture

Thank You

Questions?

Comments?