Upload
others
View
3
Download
1
Embed Size (px)
Citation preview
Electronic Circuits ELCT604
(Spring 2020)
Chapter 4 Amplifiers Frequency
ResponseDr. Eman Azab
Assistant Professor
Office: C3.315
E-mail: [email protected]
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
1
Introduction In the previous lectures we studied the voltage
amplifiers, without taking into account any capacitances
in the circuit
The voltage gain was calculated while all External capacitors
were Short circuit
The Short circuit is based on the assumption that: the
product of the input signal frequency with the capacitor
value is infinity
However, this is not valid for low frequencies!
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
2
𝑍𝐶𝑒𝑥𝑡 =1
𝑠𝐶𝑒𝑥𝑡≅ 0
Introduction
The physical structure and biasing of the transistors (MOS
or BJT) result in Internal capacitances between its
terminals
However, we have considered their impedances as Open
Circuit
However, this is not valid for High frequencies!
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
3
MOS High-Frequency ModelBJT High-Frequency Model
𝑍𝐶𝑖𝑛𝑡 =1
𝑠𝐶𝑖𝑛𝑡≅ ∞
Introduction Intrinsic Capacitances of MOS Transistor
Enhancement MOS transistor has intrinsic parasitic
capacitances
They are mainly originated from:
1. MOS physical structure (gate and Overlap Caps.)
2. Channel charge
3. Reverse biased PN junctions (Bulk and Drain/Source)
Most of these caps. are nonlinear and voltage dependent
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
4
DS
G
B
CGDCGS
CSB CDBCGB
Introduction
MOS Structure Caps
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
5
tox
n+ n+
Cross section
L
Gate oxide
xd xd
Ld
Polysilicon gate
Top view
Gate-bulkoverlap
Source
n+
Drain
n+W
Introduction Channel Charge Caps
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
6
Introduction
Reverse biased Junction Caps
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
7
Bottom
Side wall
Side wall
Channel
SourceND
Channel-stop implantN A1
Substrate NA
W
xj
LS
Objective
We want to study the effect that these capacitances have
on the amplifier’s voltage gain
For this study, we will consider that the frequency spectrum is
divided into three bands
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
8
Frequency Response Analysis
Definitions:
‘AMF’ Mid-band Gain: the amplifier voltage gain while all
capacitors are neglected
‘ALF’ Low-Frequency Band Gain: the amplifier voltage gain
while External capacitors are taken into consideration and
Internal capacitors are neglected
‘AHF’ High-Frequency Band Gain: the amplifier voltage
gain while Internal capacitors are taken into consideration
and External capacitors are neglected
Bandwidth of Amplifier: the difference between the higher
‘fH’ and lower ‘fL’ 3-dB cutoff Frequencies
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
9
Frequency Response Analysis
How to calculate the Lower 3-dB ‘fL’ cutoff frequency?
Assume that, the amplifier has ‘n’ External Capacitor
Each capacitor will generate a pole and a transmission Zero
‘fL’ is the frequency at which the voltage gain drops with 3-dB
from its maximum value
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
10
Example: Bode Plot for Amplifier with Three External Capacitors
𝐴𝐿𝐹(𝑠) =𝐴𝑀𝐹
1 +2𝜋𝑓𝐿1𝑠 1 +
2𝜋𝑓𝐿2𝑠 … 1 +
2𝜋𝑓𝐿𝑛𝑠
𝑓𝐿 = 𝑓𝐿12 + 𝑓𝐿2
2 +⋯ .+𝑓𝐿𝑛2
Frequency Response Analysis
How to calculate the Higher 3-dB ‘fH’ cutoff frequency?
Assume that, the amplifier has ‘n’ Internal Capacitor
Each capacitor will generate a pole
The 3-dB Higher cutoff frequency is the frequency at which the
voltage gain drops with 3-dB from its maximum value
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
11
Example: Bode Plot for Amplifier with One Internal Capacitor
𝐴𝐻𝐹(𝑠) =𝐴𝑀𝐹
1 +𝑠
2𝜋𝑓𝐻11 +
𝑠2𝜋𝑓𝐻2
. . . 1 +𝑠
2𝜋𝑓𝐻𝑛
𝑓𝐻 =1
1𝑓𝐻12 +
1𝑓𝐻22 +⋯ .+
1𝑓𝐻𝑛2
Calculating the Lower 3-dB
frequency
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
12
Calculating fL The lower cutoff 3-dB frequency is calculated by NOT considering
the impedances of the External capacitances Short Circuit
The poles external capacitors should be calculated by deriving
the voltage gain
However, deriving the small signal model with ‘n’ external
capacitors is complicated
We will consider each external capacitor at a time while the
other external capacitors will be considered Short Circuit
Repeat for every capacitor and all the poles will be evaluated
The internal capacitors while calculating the lower cutoff 3-dB
frequency are neglected (considered open circuit)
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
13
Example
Calculate the Low-frequency band gain for the Common
Source Amplifier
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
14
1. Calculate the Mid-band Gain
2. Use the Short-Circuit time Constant method to determine the lower 3-dB
Frequency
Example
1. Calculate the Mid-band Gain
2. Calculate the pole due to CC1 by deriving the gain
(without considering CC1 impedance a short circuit)
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
15
𝐴𝑀𝐹 =𝑣𝑜𝑢𝑡𝑣𝑖𝑛
= −𝑔𝑚 𝑟𝑑𝑠 ∕∕ 𝑅𝐿 ∕∕ 𝑅𝐷𝑅1 ∕∕ 𝑅2
𝑅1 ∕∕ 𝑅2 + 𝑅𝑠𝑖𝑔
Short-Circuit Time constant
method Instead of calculating the voltage gain more than once, we
can use the following Short-Circuit time Constant method
Consider one external capacitor at a time while the others are
short Circuit
Each External capacitor ‘Ci’ will generate a pole ωL,i
This pole is given by:
Rtot is the resistance seen by the capacitor while:
1. All other capacitors are neglected (Externals are Shorted, Internal are
Open)
2. Deactivating the AC input signal
3. Replace the capacitor with a battery
4. RThevinen at the battery is Rtot
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
16
𝜔𝐿,𝑖 =1
𝐶𝑖𝑅𝑡𝑜𝑡
Example
2. Calculate the low frequency Poles (Cont.)
A. CC1 Pole
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
17
𝜔𝐿,𝐶1 =1
𝐶𝐶1 𝑅1 ∕∕ 𝑅2 + 𝑅𝑠𝑖𝑔
Example
2. Calculate the low frequency Poles (Cont.)
B. CC2 Pole
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
18
𝜔𝐿,𝐶2 =1
𝐶𝐶2 𝑟𝑑𝑠 ∕∕ 𝑅𝐷 + 𝑅𝐿
Example
2. Calculate the low frequency Poles (Cont.)
C. CS Pole
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
19
Neglecting rds
𝜔𝐿,𝐶𝑠 ≅1
𝐶𝑆 𝑅𝑆 ∕∕1𝑔𝑚
Notes on the Example1. The lower 3-dB frequency is calculated using this
formula
2. Each Coupling capacitor generates a Transmission Zero
at s=0
3. Bypassing Capacitor generates a Zero at:
4. Proof: Derive the low-frequency band voltage gain for CS
without using Short-Circuit Time-constant method
(Assignment!)
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
20
𝑓𝐿 = 𝑓𝐿,𝐶12 + 𝑓𝐿,𝐶2
2 + 𝑓𝐿,𝐶𝑠2
𝜔𝑍 =1
𝐶𝑆𝑅𝑆
Notes on the Example5. The Low-frequency band gain for this example is given
by:
6. Sketch the Bode Plot for the Low frequency gain
(Assignment!)
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
21
𝐴𝐿𝐹(𝑠) =𝐴𝑀𝐹𝑠
2 𝑠 + 𝜔𝑍
𝑠 + 𝜔𝐿,𝐶1 𝑠 + 𝜔𝐿,𝐶2 𝑠 + 𝜔𝐿,𝐶𝑠
Calculating the Higher 3-dB
frequency
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
22
Calculating fH The higher 3-dB cutoff frequency is calculated by NOT
considering the impedances of the Internal capacitances Open
Circuit
The internal capacitors poles can be calculated by deriving the
voltage gain
However, deriving the small signal model with more than one
internal capacitor is complicated
We will consider each internal capacitor at a time while the
other internal capacitors will be considered Open Circuit
Repeat for every capacitor and all the poles will be evaluated
The external capacitors while calculating the higher 3-dB cutoff
frequency are neglected (considered short circuit)
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
23
Open-Circuit Time constant
method Alternative Solution: USE Open-Circuit time Constant
method:
Consider one Grounded internal capacitor at a time while
the others are Open Circuit, Each capacitor ‘Ci’ will generate
a pole ωH,i
This pole is given by:
Rtot is the resistance seen by the capacitor while:
1. All other capacitors are neglected (Externals are Shorted, Internal are
Open)
2. Deactivating the AC input signal
3. Replace the capacitor with a battery
4. RThevinen at the battery is Rtot
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
24
𝜔𝐻,𝑖 =1
𝐶𝑖𝑅𝑡𝑜𝑡
Example
Calculate the High-frequency band gain for the
Common Source Amplifier
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
25
1. Calculate the Mid-band Gain (Solved in Previous Example)
2. Use the Open-Circuit time Constant method to determine the Higher 3-
dB Frequency
Example
2. Calculate the High frequency Poles
Equivalent Circuit in High Frequency Band
Note that: Cds=Cdb
Cgd is not Grounded!, thus we have to use Miller’s
Theorem before using Open-Circuit Time Constant
method
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
26
Miller’s Theorem
Used in case we have a feedback Capacitor in the
amplifier (Connecting Input and Output Nodes)
Miller replaces the Feedback Element with two
grounded elements, one at each port of the network
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
27
Miller’s Theorem
If ‘Z’ is a capacitive impedance, then:
The Equivalent Circuit in High Frequency band is
shown
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
28
1 1C C A 2
11C C
A
/ / / /m ds D LA g r R R
Example
2. Calculate the High frequency Poles
We can add together parallel capacitors
Calculate the high frequency poles accordingly
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
29
1in gsC C C
2out dsC C C
Example
2. Calculate the High frequency Poles
A. Cin High Frequency Pole
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
30
𝜔𝐻,𝐶𝑖𝑛 =1
𝐶𝑖𝑛 𝑅𝑠𝑖𝑔 ∕∕ 𝑅1 ∕∕ 𝑅2
Example
2. Calculate the High frequency Poles
B. Cout High Frequency Pole
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
31
𝜔𝐻,𝐶𝑜𝑢𝑡 =1
𝐶𝑜𝑢𝑡 𝑅𝐿 ∕∕ 𝑅𝐷 ∕∕ 𝑟𝑑𝑠
Notes on the Example
1. The Higher 3-dB frequency is calculated using this
formula
2. The high-frequency band gain is given by:
3. Sketch the Bode Plot for the High frequency gain
(Assignment!)
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
32
𝑓𝐻 =1
1𝑓𝐻,𝐶𝑖𝑛2 +
1𝑓𝐻,𝐶𝑜𝑢𝑡2
𝐴𝐻𝐹(𝑠) =𝐴𝑀𝐹
1 +𝑠
𝜔𝐻,𝐶𝑖𝑛1 +
𝑠𝜔𝐻,𝐶𝑜𝑢𝑡
Notes on Drawing Bode plots
Wednesd
ay,
March
25, 2020
Dr. Eman Azab
Electronics Dept., Faculty of IET
The German University in Cairo
33