El Laboratorio de Fisica del Plasma y su vinculacion con el sector productivo y educativo

Alfonso DeviaAlfonso Devia

Universidad Nacional de Colombia Sede ManizalesUniversidad Nacional de Colombia Sede ManizalesLaboratorio de Física del PlasmaLaboratorio de Física del Plasma

DESING REALIZED IN THE LABORATORYDESING REALIZED IN THE LABORATORY

CAPACITOR BANK AUTOMATIC CAPACITOR BANK AUTOMATIC SYSTEM FOR GROWN OF THIN SYSTEM FOR GROWN OF THIN FILMS BY PAPVD PULSED ARCFILMS BY PAPVD PULSED ARC

DC SPUTTERING DC SPUTTERING SEMI-INDUSTRIAL SYSTEM BY SEMI-INDUSTRIAL SYSTEM BY PULSED ARC TECHNIQUES.PULSED ARC TECHNIQUES.

HOT FILAMENT CVD HOT FILAMENT CVD SYSTEM FOR GROWN THIN SYSTEM FOR GROWN THIN

FILMSFILMS

EQUIPMENTS OF DEPOSITION BY EQUIPMENTS OF DEPOSITION BY PLASMAS TECHNIQUESPLASMAS TECHNIQUES

CAPACITOR BANK AUTOMATIC CAPACITOR BANK AUTOMATIC SYSTEMSYSTEM

• SYSTEM DESIGN, WAS SYSTEM DESIGN, WAS IMPLENTATED AND IMPLENTATED AND PATENT TOTALLY IN PATENT TOTALLY IN THE WORK GROUP.THE WORK GROUP.

• PULSED ARC SOURCE PULSED ARC SOURCE WAS AUTOMATIZED.WAS AUTOMATIZED.

• CAPACITOR BANK (150 CAPACITOR BANK (150 A, 300 V).A, 300 V).

• CRITICALLY DAMPING CRITICALLY DAMPING DISCHARGE (DISCHARGE ( 28 ms) 28 ms) PRODUCED BY RLC PRODUCED BY RLC CIRCUIT.CIRCUIT.

• THE ELECTRODE (A) IS THE ELECTRODE (A) IS ANODE, SAMPLES ANODE, SAMPLES HOLDER AND HEATING HOLDER AND HEATING SYSTEM.SYSTEM.

• GlOW SOURCE (1000 V, GlOW SOURCE (1000 V, 60 mA) USED BY 60 mA) USED BY CLEANED THE CLEANED THE SUBSTATES. SUBSTATES.

REPETITIVE PULSED ARC SOURCE REPETITIVE PULSED ARC SOURCE CONTROLLEDCONTROLLED

AUTOMATIC PULSED VACUUM AUTOMATIC PULSED VACUUM ARC SOURCEARC SOURCE

• SYSTEM DESIGN, WAS SYSTEM DESIGN, WAS IMPLENTATED AND PATENT IMPLENTATED AND PATENT TOTALLY IN THE WORK GROUP.TOTALLY IN THE WORK GROUP.

• DESIGN WITH IGBT DESIGN WITH IGBT TECHNOLOGY (80 A, 270 V).TECHNOLOGY (80 A, 270 V).

• REPETITIVE PULSED CONTROL REPETITIVE PULSED CONTROL LIKE PULSE NUMBER AND LIKE PULSE NUMBER AND PULSE DURATION .PULSE DURATION .

• BIAS SOURCE (0,-1000 V). BIAS SOURCE (0,-1000 V).

D.C. SPUTTERINGD.C. SPUTTERING

• SYSTEM USED FOR THE SYSTEM USED FOR THE PRODUCTION OF THIN FILMS PRODUCTION OF THIN FILMS LIKE HARD COATINGS.LIKE HARD COATINGS.

• CONTROLLED GLOW CONTROLLED GLOW SOURCE (5 KV, 400 mA).SOURCE (5 KV, 400 mA).

• 1010-7 -7 mbar VACUUM.mbar VACUUM.

APLICATIONS:APLICATIONS:

• GROWTH OF GRADED GROWTH OF GRADED FUNCTIONAL THIN FILMS OF FUNCTIONAL THIN FILMS OF Ti/TiN/TiCN.Ti/TiN/TiCN.

• THE LANGMUIR PROBE WAS THE LANGMUIR PROBE WAS USED FOR ANALYSIS OF USED FOR ANALYSIS OF PLASMA PARAMENTER.PLASMA PARAMENTER.

HOT FILAMENT CVD SYSTEM FOR HOT FILAMENT CVD SYSTEM FOR GROWN THIN FILMSGROWN THIN FILMS

HOT FILAMENT HOT FILAMENT REACTOR USED REACTOR USED BY GROWN OF BY GROWN OF DIAMOND THIN DIAMOND THIN FILMS.FILMS.

DESIGN AND CONSTRUCTION OF DESIGN AND CONSTRUCTION OF PAPVD INDUSTRIAL SYSTEMSPAPVD INDUSTRIAL SYSTEMS

SEMI-INDUSTRIAL SYSTEMSEMI-INDUSTRIAL SYSTEM

DRILLS COATED USING DRILLS COATED USING THIS SYSTEM THAT IS THIS SYSTEM THAT IS THE PROTOTYPE OF THE PROTOTYPE OF THE INDUSTRIAL THE INDUSTRIAL SYSTEM. SYSTEM.

COATINGS INDUSTRIAL SYSTEMCOATINGS INDUSTRIAL SYSTEM

COATINGS INDUSTRIAL SYSTEMCOATINGS INDUSTRIAL SYSTEM

CHARACTERIZATION CHARACTERIZATION TECHNIQUESTECHNIQUES

SCANING PROBE SCANING PROBE MICROSCOPYMICROSCOPY

ENVIRONMENT ENVIRONMENT SCANING SCANING

ELECTRON ELECTRON MICROSCOPYMICROSCOPY

FT-IR FT-IR

SPECTROMETERSPECTROMETERX-RAY X-RAY

DIFRACTIONDIFRACTION

X-RAY X-RAY PHOTOELECTRON PHOTOELECTRON SPECTROSCOPYSPECTROSCOPY

APLICATIONSAPLICATIONS

ANNEALING TiZrN FILMSANNEALING TiZrN FILMS

FORMATION OF OXIDES PHASESFORMATION OF OXIDES PHASES

IN A RANGE BETWEEN 700-800 ºC, THE TiZrN BEGIN IN A RANGE BETWEEN 700-800 ºC, THE TiZrN BEGIN THE OXIDATION PROCESS THE OXIDATION PROCESS

NO FORMATION OF OXIDES IN THE NO FORMATION OF OXIDES IN THE

SUBSTRATESUBSTRATE

IN THE SAME RANGE OF TEMPERATURE, THE IN THE SAME RANGE OF TEMPERATURE, THE SUBSTRATE SHOWS A THERMAL STRESS BUT NOT, SUBSTRATE SHOWS A THERMAL STRESS BUT NOT,

OXIDATION OXIDATION

STUDY OF TiN/TiC BILAYERSSTUDY OF TiN/TiC BILAYERS

SAMPLES GROWN VARYNG THE SUBSTRATE SAMPLES GROWN VARYNG THE SUBSTRATE TEMPERATURE. WHEN THE TEMPERATURE INCREASE, TEMPERATURE. WHEN THE TEMPERATURE INCREASE, THE THICKNESS AND DENSITY TOO.THE THICKNESS AND DENSITY TOO.

SIMULATION OF THE TiN/TiC SIMULATION OF THE TiN/TiC SYSTEM IN THE SYSTEM IN THE INTERPHASEINTERPHASE

DECONVOLUTION OF THE DIFFRACTION PATTERN DECONVOLUTION OF THE DIFFRACTION PATTERN USING THE RIETVELD METHOD. WITH THIS METHOD USING THE RIETVELD METHOD. WITH THIS METHOD WE OBTAINED THE POSITION PEAK AND THE FWHM. WE OBTAINED THE POSITION PEAK AND THE FWHM.

STUDY OF TiN/TiC BILAYERSSTUDY OF TiN/TiC BILAYERS

WITH THE SCHERRER WITH THE SCHERRER EQUATION THE CRYSTALLITE EQUATION THE CRYSTALLITE SIZE AND MICROSTRAIN SIZE AND MICROSTRAIN WERE DETERMIANTED. WERE DETERMIANTED.

STUDY OF TiN/TiC BILAYERSSTUDY OF TiN/TiC BILAYERS

THE PROFILER DEPTH THE PROFILER DEPTH REALIZED TO THE BILAYER REALIZED TO THE BILAYER SHOWS AN INTERDIFFUSION SHOWS AN INTERDIFFUSION BETWEEN TiN AND TiC. BETWEEN TiN AND TiC. IN THE C1S NARROW IN THE C1S NARROW SPRECTRUM, THE SURFACE SPRECTRUM, THE SURFACE OF THE FILM HAS C-C OF THE FILM HAS C-C BINDINGS, BUT AFTER OF BINDINGS, BUT AFTER OF THE ETCHING THE C-C THE ETCHING THE C-C DISSAPEAR . DISSAPEAR .

A B

C D

BILAYER CHEMICAL MAP . A- SEM IMAGEN. B- CARBON. C- TITANUIM. D- NITROGEN.

STUDY OF TiN/TiC BILAYERSSTUDY OF TiN/TiC BILAYERS

NANOLITOGRAPHYNANOLITOGRAPHY

NANOLITOGRAPHY BY LOCAL OXIDATION OF THIN NANOLITOGRAPHY BY LOCAL OXIDATION OF THIN FILMS OF TiN USING THE SCANING PROBE FILMS OF TiN USING THE SCANING PROBE

MICROSCOPYMICROSCOPY

Recubrimientos DurosRecubrimientos Duros

Espectro de Difracción de una Bicapa de Espectro de Difracción de una Bicapa de W/WC W/WC

Imagen AFM de un recubrimiento de Imagen AFM de un recubrimiento de ZrNZrN

Espectro de Difracción de una Bicapa de Espectro de Difracción de una Bicapa de TiN/ZrN TiN/ZrN

Imagen AFM de una bicapa de Imagen AFM de una bicapa de TiN/TiCTiN/TiC

PUBLICACIÓN DE ARTÍCULOSPUBLICACIÓN DE ARTÍCULOS

2006American Institute of Physics Influence Substrate Temperature on Structural

Properties of TiN/TiC Bilayers Produced by Pulsed Arc Techniques

Devia Alfonso, Benavides Vicente, Restrepo Elisabeth, Arias Diego F, Ospina Rogelio

2006. Wear. Determination of friction coefficient on ZrN and TiN using lateral force microscopy (LFM).

Diego F Arias, Diana M Marulanda, Alejandra M Baena, ALFONSO DEVIA,

2006American Institute Of Physics

Deposition And Characterization of (Ti,Zr)N Thin Films Grown Through PAPVD By The Pulsed Arc Technique.

D. M. Marulanda, O. Trujillo, A. DEVIA,

2006American Institute Of Physics.

Characterization and Surface Treatment of Materials Used in MADEAL S.A. Industry Productive Process of Rims by Plasma Assisted Repetitive Pulsed Arcs Technique.

H JIMENEZ, V.H. Salazar, A. DEVIA,, S. Jaramillo, G. Velez

2006Applied Surface Science

Study of TiN and Zrn Thin Films Grown by Cathodic Arc Technique

Arias Diego Fernando, Arango Yulieth Cristina, Devia Alfonso

2006Surface and Coatings Technology

Effect of the Substrate Temperature in Zrn Coatings Grown by the Pulsed Arc Technique by XRD.

Jimenez Hernando, Restrepo Elisabeht, Devia Alfonso

2006Surface and Coatings Technology

Implementation of a switched dc arc power supply for the production of hard coatings

Devia Alfonso, Arango Yulieth, Devia Diana.

2006American Institute of Physics

Effects of the substrate temperature in aun thin films by means of x-ray diffraction Devia Alfonso, Benavides Vicente,

Castillo A, Quintero J.

2006Vacuum Diagnostics of Pulsed Vacuum Arc Discharges by Optical Emission Spectroscopy and Electrostatic Double Probe Measurements

Devia Alfonso, Garcia Alpidio, Restrepo Elisabeth, Jimenez Hernando, Castillo Alirio, Ospina Rogelio, Benavides Vicente, Devia Alfonso

2006VacuumInfluence of the Annealing Temperature on a Crystal Phase of W/WC Bilayers Grown by Pulsed Arc Discharge

Devia Alfonso, Ospina Rogelio, Castillo Alirio, Benavides Vicente, Restrepo Elisabeth, Arango Yulieth, Arias Diego.

AñoAñoPublicaciónPublicaciónTítuloTítuloAutoresAutores