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Inputs from: Inputs from: Peng Peng Zhou, S. Wise, W.C. Johnson, D.M. Zhou, S. Wise, W.C. Johnson, D.M. Elzey Elzey Effect of External Fields on Microstructures: A Modeling Perspective Nitin Nitin Singh Singh Department of Materials Science and Engineering Department of Materials Science and Engineering University of Virginia University of Virginia 2006 2006

Effect of External Fields on Microstructures: A Modeling

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Inputs from: Inputs from: PengPeng Zhou, S. Wise, W.C. Johnson, D.M. Zhou, S. Wise, W.C. Johnson, D.M. ElzeyElzey

Effect of External Fields on Microstructures: A Modeling

PerspectiveNitinNitin SinghSingh

Department of Materials Science and EngineeringDepartment of Materials Science and EngineeringUniversity of VirginiaUniversity of Virginia

20062006

OutlineOutline

•• MotivationMotivation

•• Quaternary System Phase Microstructure: Quaternary System Phase Microstructure: Inhomogeneous Elastic PropertiesInhomogeneous Elastic Properties

•• Intermediate Phase Growth: Externally Applied Intermediate Phase Growth: Externally Applied Electric FieldsElectric Fields

What can we do with OOF:What can we do with OOF:Study the effect of externally applied tractions and electric fields

on the kinetics and the final microstructure formed.

MotivationMotivation

• Diffuse Interface Model used to study phase microstructure evolution in a III-V system with site occupancy restriction.

• What is the effect of self-stress?• What is the effect of externally applied tractions?• Can we consider elastic inhomogeneity?

• Diffuse Interface Model is used to study the behavior of an existing intermediate phase during current flow.

• What effect does the direction of current have?• How do stress considerations play a role?

• Our Numerical Engine uses the Multigrid Method to solve equations.

• We do not have the versatility as OOF.

• We can compare our results with that by OOF

1. III1. III--V Phase Microstructure V Phase Microstructure Evolution Evolution

• Model the microstructural evolution of a III-V pseudo-binary system which has a miscibility gap.

• Model Physical System: – InxGa1-xAsySb1-y

– Group III: In, Ga– Group V: As, Sb– Mixture of 4 binary compounds

InAs, InSbGaAs, GaSb

• The quaternary solid solutions crystallize in Zinc-Blend structure which consists of two interpenetrating binary sublattices.

Regular Solution Model for AxB1-xCyD1-y system

fchem(Φ, x, y) = xy µ0AC(Φ) + x(1-y) µ0

AD(Φ) + y(1-x) µ0BC(Φ) + (1-x)(1-y) µ0

BD(Φ)+ ρokT[xlnx + (1-x)ln(1-x) + yln(y) + (1-y)ln(1-y)]+ x(1-x)[y ωBC-AC(Φ) + (1-y) ωAD-BD(Φ)]+ y(1-y)[x ωAD-AC(Φ) + (1-x) ωBC-BD(Φ)]

F(x,y,Φ) = ∫V {fchem(x,y, Φ) + felas(x,y, Φ,u) - µA(x-xo) - µ C(y-yo) + κxx/2 ∆ x + κyy/2 ∆ y + κΦΦ /2 ∆ Φ} d3z + ∫S [fS(x,y) - t.u}d2z

κ xx, κ yy, κΦΦ - Cahn-Hilliard gradient energy coefficients associated to the x, y and Φ fields.

Elastic Energy for AxB1-xCyD1-y system

felas(Φ, x, y, u) = 1/2 Tij(Φ, x, y, u)(Eij(u) - e(Φ, x, y)δij)

e(Φ, x, y) - eigenstrain in the system

Free Energy FunctionalFree Energy Functional

Free Energy SurfaceFree Energy Surface

Free energy surface across the ‘x’ and ‘y’ composition at T = 773 K for a InxGa1-xAsySb1-ysystem.

InxGa1-xAsySb1-y system

ThermodynamicsThermodynamics

βαβα

βαβα

µµµµ

µµµµ

BDBDBCBC

ADADACAC

BoundaryyMiscibilit

==

==

0

22

2

2

2

2

=⎟⎟⎠

⎞⎜⎜⎝

⎛∂∂

∂−⎟⎟⎠

⎞⎜⎜⎝

⎛∂

∂•⎟⎟⎠

⎞⎜⎜⎝

⎛∂

∂yx

fy

fx

f

SpinodalChemicalchemchemchem

GaSb

GaAs

InSb

InAs

Calculated Spinodal Boundary

Calculated Miscibility Boundary

Calculated Phase Diagram

-order parameters evolve so that the total free energy decreases

Evolution Equations for Evolution Equations for the Order Parametersthe Order Parameters

yy

fy

fyF

xx

fx

fxF

yFM

xFM

tx

yFM

xFM

tx

parametersordertheforEquationsEvolution

yy

elaschem

y

xx

elaschem

x

yyyx

xyxx

2

2

∇−∂

∂+

∂∂

=≡

∇−∂

∂+

∂∂

=≡

⎟⎟⎠

⎞⎜⎜⎝

⎛⎟⎟⎠

⎞⎜⎜⎝

⎛∇+⎟

⎠⎞

⎜⎝⎛∇•∇=

∂∂

⎟⎟⎠

⎞⎜⎜⎝

⎛⎟⎟⎠

⎞⎜⎜⎝

⎛∇+⎟

⎠⎞

⎜⎝⎛∇•∇=

∂∂

κδδµ

κδδµ

δδ

δδ

δδ

δδ

(X,Y) = (0.3,0.4)

GaSb

GaAs

InSb

InAs

Miscibility Boundary Spinodal Boundary

Simulation 1: Initial ConditionsSimulation 1: Initial Conditions

cx000000 cx000500

Simulation 1: Results for XSimulation 1: Results for X

cx009000 cx010000

(AxB1-xCyD1-y)

cy009000 cy010000

cy000000 cy000500

(AxB1-xCyD1-y)

Simulation 1: Results for YSimulation 1: Results for Y

(X,Y) - (0.2, 0.5)

GaSb

GaAs

InSb

InAs

Miscibility Boundary

Spinodal Boundary

cx000000 cx001200

cy000000 cy001200

(AxB1-xCyD1-y)

cy001800 cy002400

cx001800 cx002400

(AxB1-xCyD1-y)

2. Intermediate Phase growth2. Intermediate Phase growth•Diffusion couple

– Binary, multiphase

•Independent variables:Diffusion:– c (composition) – φ (crystal

structure)

Electromigration:– ψ (electric

potential)

Elasticity:– u (elastic

displacement)

Periodic B.C.

Fixed or insulated B.C. on the left/right side

Periodic B.C.

Fixed or insulated B.C. on the left/right side

• Free energy density of the system(Joule/mol)

– Chemical free energy

– Electrostatic energy

– Elastic energy

– Gradient energy

22

22),,(),,(),(),( φ

κκφϕφφφ ϕ ∇+∇+++= cucfcfcfcf celaselecch

Free Energy DensityFree Energy Density

• Effective charge– Zi = Zv + Zm (i=A,B)

• Electrostatic energy

ψ))1((0 ABelec ZccZeNf −+=

ψ : the electric potentialN0 : Avogadro’s numberZi(i=A,B): the effective charges

Valence charge

Momentum transferDominant contribution

Effecitive charge of Al: -20/-30

Electrostatic EnergyElectrostatic Energy

• Polarity effect in Al/Zn diffusion sample

Intermediate Phase GrowthIntermediate Phase Growth

What can we do with OOF?What can we do with OOF?

• Compare our results• OOF is more versatile• More accurate material property information

can be used• OOF can take information from real

microstructures• Perform Virtual Experiments• Is it applicable to study dynamic processes?• What other external long range fields can be

included?