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Innovation with Integrity Max Patzschke, Andi Kaeppel Bruker Nano GmbH EDS Analysis Using Ultra–Low Beam Currents Multiple element SDDs XFlash ® 5060FQ Examples of fast/large area SEM/T-SEM-EDS using the FQ

EDS Analysis UsingUltra–Low Beam Currents · •Sum spectra of the three phases can be generated and phase ratio can be calculated. Phase . Area / pix: ... 7 cps/eV S Pb . Lead

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Innovation with Integrity

Max Patzschke, Andi Kaeppel

Bruker Nano GmbH

EDS Analysis Using Ultra–Low Beam Currents

• Multiple element SDDs

• XFlash® 5060FQ

• Examples of fast/large area SEM/T-SEM-EDS using the FQ

Presenters

Max Patzschke

Application Scientist,Bruker Nano Analytics, Berlin, Germany

Andi Kaeppel

Product Manager EDS/SEM, Bruker Nano Analytics, Berlin, Germany

2

• Introducing the X-Flash FlatQuad• Chip area vs. take of angle• Examples:• -high speed mapping• -large area maps• - samples without sample preparation• -samples with high topography • -Low kV analysis on sensitive samples and nano particles

Overview

3

• Detector combines high count rate capabilities with high collection efficiency (solid angle)

• Application fields are:

• Particles or structures in nanometer range (low kV, smaller excitation volume)

• Beam sensitive samples (low probe current)

• Samples with high topography (avoids shadowing effects)

• Light element samples (low kV for ideal ionization cross-section)

• Thin (electron transparent) samplee.g. TEM/STEM samples (low x-ray yield)

• Ultra fast spectral mapping

• Large area mapping: mapping of neighboring areas and stitch maps together

XFlash® 5060FQ

4

Four channel SDD: XFlash® 5060FQ

5

Flat QUAD detector in combination with a conventional XFlashdetector at the Hitachi SU8000 series (Cold-Emission FE-SEM)

XFlash® 5060FQ

• 4x15mm²=60mm²

• capable of output count rates up to 4 x 400,000 cps= 1,600,000 cps

• annular design

• Central aperture for the primary beam

6

Advantage of four elements Count rate capability

Output vs Input count rate, four channel SDD, 400kcps processors

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1800

1500

1200

900

600

300

0

OC

R /

kcps

0 750 1500 2250 3000 3750 4500ICR / kcps

OCR of up to 4 x 400,000 cps= 1,600,000 cps

Collection efficiency: solid Angle for X-ray collection

wikipedia

Ω = Asurf / r2 [sr]ΩEDS-SEM ~ 0.01 – 0.1 srare typical for side entry

ΩEDS-S/TEM ~ 0.1 – 0.4 srare typical for side entry

Some 100mm2 in STEM ~ 0.5srFEI Osiris 0.9 sr (4 x 30mm2)FEI ChemiSTEM 0.7sr (4 x )

Achieve higher solid angle by: Chip area A but, smaller areas have advantages:less cooling, less weight > higher stability, less pile up, better TOA >better P/B, better energy resolution, higher OCR/ICR = higher efficiency Distance d: get as close as possible

Ω =𝐴𝐴𝑑𝑑𝑑

8

Advantage of large solid angle

max solid angle atd = 2.5mm:Ω > 1.1 sr

Solid angle and OCR vs distance d

Nestor J. Zaluzec, Detector solid angle Formulas for Usein EDS, Microsc. Microanal., 15 (2009) 93

Cu, 1nA, 5kV

9

XFlash® 5060FQ

• Guaranteed energy resolution Mn-Ka 129 eV (other resolutions on request)

• 4x15mm²=60mm²

• annular design

• Central aperture for the primary beam

• designed to be placed between pole piece and sample

• Segments very close to sample

combination ofhigh count rate large solidcapability angle + high TOA

10

Analysis of a capacitor

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Multilayer ceramic capacitor (MLCC): Layered structure of Si, Ti, Ni, Cu, Zr, Sn, Ba.

Acquired using Hitachi SU8040

Analysis of a capacitor

12

Conventional detector, Ω≈0.01sr

512x384pixels, HV=10kV, 170s, 260cps ICR, 41000 cts total

Analysis of a capacitor

13

Conventional detector, Ω≈0.01sr

512x384pixels, HV=10kV, 170s, 260cps ICR, 41000 cts total

XFlash® 5060FQ

512x384pixels, HV=10kV, 170s, 28kcps ICR, 4800000 cts total (same beam current)

Ω≈1sr> 100x

Analysis of a capacitor

14

XFlash® 5060FQ

512x384pixels, HV=10kV, 170s, 28kcps ICR, 4800000 cts total (same beam current)

Ω≈1sr

Analysis of a capacitor

15

• Analysis of single element distributions

Analysis of a capacitor:XFlash® 5060FQ

16

• Identify significant phases andmark objects

• Use this information for a phaseanalysis: group similar specta (ignoringnoise), separate significantdifferencesPCA= principle component analysis

Analysis of a capacitor

17

• Investigate the sum spectra of the phases

Analysis of a capacitor

18

SnPlating

NiBarrier

CuTermination

BaTiO3dielectric

layer

• A lot of analysis methods can be applied to dataacquired in only 3 minutes!

Large area mapping with XFlash 5060F

Courtesy by Newsom, Univ. of New Mexico, Albuquerque

Mapping ofYaxcopoil-1 drillcore of Chicxulubimpact crater

20x19 imagesstitched together

7800x5500 pixel2µm per pixel19h total

acquisition time1.5 ms per pixel

19

Large area mapping with XFlash 5060F

Courtesy by Newsom, Univ. of New Mexico, Albuquerque1 mmFe K Ca Mg Cl

Mapping ofYaxcopoil-1 drillcore of Chicxulubimpact crater

20x19 imagesstitched together

7800x5500 pixel2µm per pixel19h total

acquisition time1.5 ms per pixel

20

Large area mapping with XFlash 5060F

21Courtesy by Newsom, Univ. of New Mexico, Albuquerque

Mapping ofYaxcopoil-1 drillcore of Chicxulubimpact crater

Zoom in interesting area and new map: andradite garnet (pink) in Mg rich matrix (purple)

1024x768 image0.4 µm per pixel

Fe K Ca Mg Cl 1 mm

φ=30..35°

Take-off angle comparison: XFlash® 5060FQ vs. conventional SDDs:

Advantage of high take-off angle andannular design

22

φ=60..70°

Polymer composite containing organo clay

2 µm

XFlash 5060F QUAD + 5030 detectorPolymer compound

XFlash 5060F QUAD detector XFlash 5030

Courtesy by Dalto et al., Universidade Federal do Rio de Janeiro

3 kV, 220pA, 10 kcps, 320 s,1024x768 pixel

3 kV, 220pA, 0.8 kcps, 320 s,1024x768 pixelShadow effects due to rough surface

23

Analysis of samples with high topography

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Sample containing C, Si, SiC

• Rough, broken-off surface, showing cracks and recess structures

• Difficult to analyze because of inclined surfaces

• Large absorption effects possible, especially for carbon

• Analyzed with Hitachi SU8040 cold cathode FE-SEM at HV=3kV

Analysis of samples with high topography

25

Mapping of C, Si

512x384pixels, HV=3kV, 170s, 7.5kcps ICR, 1,200,000 cts total

Sample containing Si, SiC, C

• Mapping of carbon and silicon shows C rich (red), Si rich (blue, upper left) and Si-C containing phases

Analysis of samples with high topography

26

Mapping of C, Si

512x384pixels, HV=3kV, 170s, 7.5kcps ICR, 1,200,000 cts total

Sample containing Si, SiC, C

• Application of an automatic phase analysis (combination of similar spectra) reveals more clearly the three different phases

• Almost independent of the topography

Analysis of samples with high topography

27

Sample containing Si, SiC, C

• Application of an automatic phase analysis (combination of similar spectra) reveals more clearly the three different phases

• Almost independent of the topography

• Sum spectra of the three phases can be generated and phase ratio can be calculated

Phase Area / pix Area / %C rich 117,000 60

Si rich 7,000 4

Si-C 72,000 36

Analysis of samples with high topography

28

Sample containing Si, SiC, C

• Application of an automatic phase analysis (combination of similar spectra) reveals more clearly the three different phases

• Almost independent of the topography

• Sum spectra of the three phases can be generated and phase ratio can be calculated

• Sum spectra can be quantitatively analyzed and indicate a C, Si and SiC phase

• Restrictions: C absorption effects due to inclined facets

Phase C / at.% Si / at.%C rich 98 2

Si rich 15 85

Si-C 45 55

Sample courtesy: L. Ferrière, Naturhistorisches Museum Wien

High vacuum analysis at low beam currentHistoric stony meteorite (“Mocs”)

XFlash® 5060F, Hitachi SU6600, 6 kV, <10 pA, 2 kcps, 47 min

• Fell 3rd February 1882 • Sample preparation

(coating) exluded• Lead contamination

(old polishing)• Pb-M and S-K can be

deconvolved using an online routine

1.80 2.00 2.20 2.40 2.60 2.80keV

0

1

2

3

4

5

6

7 cps/eV

S Pb

Lead deposition in cracks

Iron nickel sulfides

29

Sample courtesy: L. Ferrière, Naturhistorisches Museum Wien

XFlash® 5060F, Hitachi SU6600, 6 kV, <10 pA, 2 kcps, 15 h

1. Lead is deposited on top of silicates

2. Contamination withsoot by heating withcoal-fired furnaces

High vacuum analysis at low beam currentHistoric stony meteorite (“Mocs”)

30

Sample courtesy: L. Ferrière, Naturhistorisches Museum Wien

High vacuum analysis at low beam currentHistoric stony meteorite (“Mocs”)

<300 nm!

• Cultural heritage samples can be analyzed at the sub-µm scale without any sample preparation

• EDS at high vacuum offers better spatial resolution compared to low vacuum

XFlash® 5060F, Hitachi SU6600, 6 kV, <10 pA, 2 kcps, 15 h

31

Low vacuum analysisParasitoid wasp (Monolexis fuscicornis)

32

Head

In cooperation with: A. T. Kearsley & G. R. Broad (Natural History Museum, London)

• Low vacuum (20 Pa), 6kV, 240 sec, 800 x 600 pixel

• Tooth: Ca & P biomineralization of apatite Ca5(PO4)3(OH,F,Cl)

Low vacuum analysisParasitoid wasp (Monolexis fuscicornis)

33

In cooperation with: A. T. Kearsley & G. R. Broad (Natural History Museum, London)

• Low vacuum (20 Pa), 5kV, 30 min, 320 x 240 pixel

Ovipositor (sting and egg-layer)

Zn

O

Na

Cl

Low vacuum analysisParasitoid wasp (Monolexis fuscicornis)

34

In cooperation with: A. T. Kearsley & G. R. Broad (Natural History Museum, London)

• Low vacuum (20 Pa), 5kV, 30 min, 320 x 240 pixel

Ovipositor (sting and egg-layer)

0.80 0.90 1.00 1.10 1.20 1.30keV

0.0

0.5

1.0

1.5

2.0

2.5

cps/eV

Mg Na

Zn

Zn

O

Na

Cl

NASA Stardust mission: spacecraft collected samples of a comet and returned them to Earth

35

• Test experiments necessary

• Micro crater generated by meteor like projectiles in Al foil

stardust.jpl.nasa.gov

25.07.2016 36

HyperMap: 3600x2700 pixel, 10keV, 1.0 Mcps ICR, 620 s,41 counts/pixel, reduced shadow effects

HyperMap / Spectral image / proof of principle exp.Micro crater generated by meteor like projectiles inAl foil, Hitachi SU6600 Schottky FE-SEM

Kearsley et al. 2011, Salge et al. 2011

25.07.2016 37

Analysis of a hole structure

25.07.2016 38

Magnified area: 480x360 pixel

TSEM-EDX of NPTypical Overview

39

40

TSEM-EDX of fluorescent core shell NPSilica nanoparticles coated with Alexa® dye

XFlash FlatQUAD, 5 kV, 520 pA , 22.5 kcps, 250x250 pixel, 2 nm pixel size, 377 s

K. Natte, T. Behnke, G. Orts-Gil, C. Würth, J. F. Friedrich, W. Österle and U. Resch-Genger, J Nanopart Res, 2012, 14, 680

41

TSEM-EDX of fluorescent core shell NPSilica nanoparticles coated with Alexa® dye

XFlash FlatQUAD, 5 kV, 520 pA , 22.5 kcps, 250x250 pixel, 2 nm pixel size, 377 s

Rades et al

42

TSEM-EDX of NPClassification

„bulk“ NP „hollow“ NP

Hodoroaba et al

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TSEM-EDX of NPClassification

0

10

20

30

40

50

60

0 50 100 150

Rel.

Inte

nsity

Distance/ nm

0

20

40

60

80

100

0 50 100 150

Rel.

Inte

nsity

Distance/ nm

0

5

10

15

20

25

0 50 100 150 200Re

l. In

tens

ity

Distance/ nm

„hollow“

„meso“„bulk“

In-lens TSEM

Si KαO K

• SiK / OK intensity ratio: independent of internal NP

morphology/structure• ! net local (inside NP) intensities

44

TSEM-EDX of NPClassification

„bulk“ NP

„hollow“ NP

unclassified NPSDD10 mm2

Flat QUAD

Acq time (s per NP) 120 2

ICR (kcps) 0.3 ≥20

Sol angle (sr) 0.01 1

NP identified 25 127

45

Summary

• The XFlash® 5060FQ offers highest solid angle (1.1sr) + 4 x single throughput (1.600.000 cts) and collection angle of 60°– 70°

• allowing for

- Ultra fast mapping

- Nano particles

- large area mapping

- high topography no shadow effects

- Beam sensitive samples,

- SEM/T-SEM-EDS of

- bulk and

- electron transparent samples,

46

GeozentrumNordbayernP. Schulte

Natural HistoryMuseum London

A. KearsleyG. Broad

Ocean Drilling Program

Federal Institute for Materials Research

and TestingD. Hodoroaba,

European Union

grant agreement n 263147… Risk assessmenst …

Institute of Meteoritics, University ofNew MexicoH. Newsom

Q&A

47

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Innovation with Integrity

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