電磁干擾防制【基礎課程】pemclab.cn.nctu.edu.tw/W3news/實驗室課程網頁...140-ns Minimum Off-Time for Low Dropout 0.8-V Reference With ±1% Feedback Accuracy 7.5-V

1160Filename B08 投影片【1】電磁干擾【課程】電磁干擾防制【基礎課程】pptx

電磁干擾防制【基礎課程】

From Power System Design to Power IC Design

鄒應嶼教授

國立交通大學電機控制工程研究所

台灣新竹交通大學電機控制工程研究所808實驗室

電力電子系統晶片數位電源DSP控制馬達與伺服控制

httppemclabcnnctuedutwLab-808 Power Electronic Systems amp Chips Lab NCTU Taiwan

LAB808NCTU

Lab808 電力電子系統與晶片實驗室

Power Electronic Systems amp Chips NCTU TAIWAN

台灣新竹bull交通大學bull電機控制工程研究所

2160

課程大綱電磁干擾防制技術【基礎課程】6小時

1 電磁相容簡介

電磁相容雜訊耦合傳導與輻射電磁放射(EME)與電磁免疫(EMS)電感耦合與電容耦合電力干擾電磁干擾法規電磁干擾量測

2 電磁干擾的基礎理論

電磁干擾的模型訊號頻譜轉移函數共模與差模電源供應器元件的高頻模型傳輸線模型

3 電磁干擾防制方法

接地纜線濾波屏障平衡隔離緩振電路分離與取向阻抗控制

4 討論時間 (QampA 30分鐘)與課後測驗

如何確認雜訊源如何降低共模電壓如何量測共模雜訊

一個特定電磁干擾的訊號源如何確認其雜訊干擾頻率

3160

Why EMC is Important

Power Electronic Systems amp Chips Lab NCTU Taiwan

電力電子系統與晶片實驗室Power Electronic Systems amp Chips Lab

交通大學 bull 電機控制工程研究所

4160

Living with EMC

Radiated and ConductedEmission

What a nice day

Radiated and ConductedSusceptibility

What wrong

Electromagnetic Immunity (Susceptibility EMS)

[電磁免疫]

Electromagnetic Interference (Emission EMI EME) [電磁干擾]

5160

Circuit amp PCB Design in Compliance with EMC




[電磁免疫]


6160


EMC is an indispensable requirement for an electronic product

EMC is the law for electronics

EMC stands for a state of harmoniousness of the designed electronic system

This is an age of fast and faster

Faster means smaller and smaller means more severe interference between circuits and components

A senior engineer must understand EMC

7160

Why EMC is Difficult

Theory Practice

Components System

Analog Digital

Signal Power

EMI is invisible in the circuit schematics but dose exist in the circuits

EMC stands for Everything Must be Constrained

8160

Why Engineers Dont Understand EMC

Engineers dont realize current flows in loops

Engineers dont understand the H-field

Engineers dont know gates are differential amplifiers

Engineers dont see electromagnetic waves

Engineers dont believe an understanding of EMC will advance their careers

Engineers do not know about dynamics

Electromagnetics circuit theory and power electronics are the basis for the understanding of EMC

9160

PCB Layout Concept for Power Electronics Engineers

Analog circuits rarely work correctly unless engineering effort isexpended to solve EMI and layout problems

Sooner or later (or now) the engineer needs to learn to deal with EMI

Practical engineering approaches

figure out where are the significant EMI sources

figure out where the EMI is going (EMI victim)

figure out where the EMI is coupling (Coupling path)

engineer the circuit layout to mitigate EMI problems

Build a layout that can be understood and analyzed

10160

A Text Book DC-DC Converter

2

2max

1( )

4

o

dco LB

V D

V D I I

o

dc

VD

VCCM

DCM

low-pass filter

L

C ov RLv

Li oi

CidcV

Si

Di

L

TVI sdc

LB 8max

11160

A Practical DC-DC Converter

Versatile Synchronous Buck DC-DC Controller Wide Input Voltage Range of 6 V to 75 V Adjustable Output Voltage From 08 V to 60 V

Meets EN55022 CISPR 22 EMI Standards Lossless RDS(on) or Shunt Current Sensing Switching Frequency From 100 kHz to 1 MHz

SYNC In and SYNC Out Capability 140-ns Minimum Off-Time for Low Dropout 08-V Reference With plusmn1 Feedback Accuracy 75-V Gate Drivers for Standard VTH MOSFETs

4-ns Adaptive Dead-Time Control 23-A Source and 35-A Sink Capability Low-Side Soft-Start for Pre-biased Start-Up

Adjustable Soft-Start or Optional Voltage Tracking

12160

A Practical DC-DC Power Module for POL Applications

PCB Layout Guide

PCB Top Copper

PCB Bottom Copper

Internal Layer 1

Internal Layer 2

Complies with EN55022 (CISPR22) Class B Conducted and Radiated EMI Standard

13160

Keu Issues for Power Converter Design

14160

1 Introduction to EMIEMC




15160

EMI Transmission Path and Coupling Mechanisms

SIGNALSOURCE

EMISOURCE

COUPLING PATH (CHANNEL)

VICTIM

SIGNALRECEIVER

雜訊源

接收器信號源

雜訊的傳導方式傳導 (conductive emission)

輻射 (radiative emission)

雜訊的耦合方式電容性 (capacitive coupling)

電感性 (inductive coupling)

EMISOURCE

VICTIM

Conductive

Inductive

Capacitive

Radiative

Principles of Electromagnetic Compatibility (EMC)

safety margin supplierEMS level

EMS limit

EME limit

EME level

EMC margin

dB

source

receiver

frequency

EMC = Electro Magnetic CompatibilityEME = Electro Magnetic Emission (Interference)EMS = Electro Magnetic Susceptibility (immunity)

EMC is the ability of an equipment or system to function satisfactorily in its environment without introducing intolerable electromagnetic interference to anything in that environment

safety margin supplier

17160

EMI Sources

Power Switching Circuits

HF Digital Circuits

Lighting

Galvanic Action - Galvanic action occurs when two electrochemically dissimilar metals are in contact and a conductive path occurs for electrons and ions to move from one metal to the other

Electrolytic Action - Galvanic action occurs when two electrochemically dissimilar metals are in contact and a conductive path occurs for electrons and ions to move from one metal to the other

Triboelectric Effect - The triboelectric effect (also known as triboelectric charging) is a type of contact electrification in which certain materials become electrically charged after they come into frictional contact with a different material

Conductor Motion

Voltage Spikes

Current Spikes

div L

dt

dvi C

dt

18160

Control EMI for EMC Compliance

Control Emissions(Reduce noise source level)

(Reduce propagation efficiency)

Control Susceptibility(Reduce propagation efficiency)

(Increase receptor immunity)

ReceptorCoupling pathEMI source

Signal DelayTransmission

Conducted

Radiated Near Field

Far Field

Distortion Line Dynamics

Field Dynamics

19160

Modeling of Signal Transmission in Ideal Condition

A

1 2 3 4 5 6 7

10

0f

A

A

1 2 3 4 5 6 7

10

0f

A

Driver Zero Output Impedance

Receiver Infinite Input Impedance

No Delay (Zero Length)

No Loss (Zero Current)

No Distortion (Zero L amp C)

No Coupling (Isolated)

No Reflection (Balanced)

Ideal Condition

ReceptorSignal source

20160

Intrinsic Characteristics of Wires of Switching Circuits

How to calculate the wire dynamics

21160

Dynamics of the Switches and WiresA possible current path (minimum impedance) for a specific frequency

22160

Areas of Electromagnetic Compatibility (EMC)

Electromagnetic Compatibility (EMC)

Electromagnetic Emissions (EME)

Electromagnetic Susceptibility (EMS)

Conducted Emissions (CE)

Radiated Emissions (RE)

Conducted Susceptibility (CS)

Radiated Susceptibility (RS)

23160

Cost Analysis of EMI Techniques for Product DevelopmentA

vaila

ble

tech

niq

ues

an

d re

lativ

e co

st

to s

olve

noi

se p

robl

em

DESIGNPHASE

TESTINGPHASE

PRODUCTIONPHASE

Equipment development time scale

THCHNIQUES COST

Ref Ott H Noise Reduction Techniques in Electronic Systems 2nd ed John Wiley amp Sons 1988 p 6

在產品開發的後期才進行電磁干擾的防制措施不僅困難度大幅增加也將導致時程延期與成本增加

在產品開發的初期就應該進行各子系統的電磁干擾改善並隨著系統的整合度增加提升其系統層次的電磁干擾防制

24160

Commercial EMC RequirementsEmission and ImmunitySusceptibility

IMMUNITY

ESD

RADIATED RF

EFTBURST

SURGE

CONDUCTED RF

OTHERS

EMISSIONS

RADIATED

CONDUCTED

LINE HARMONICS

LINE FLUCTUATIONS

Mandatory for 16 amps per EN61000-3-2 amp 3-3

January 1 2001

Testing for EMC Compliance Approaches and Techniques Mark I Montrose and Edward M Nakauchi Wiley-IEEE Press April 2004

25160

EMC Regulations Emission amp Immunity

EMC Regulations

EMISSION TESTS

SUSCEPTIBILITY TESTS

CISPR-22 is the international EMI standard FCC Part 15 is the US EMI standard There are similar however CISPR-22 is a little higher than FCC Part 15 and in general CISPR-22 has become the underlying standard to comply with across the world (for IT-related equipment and power supplies)

26160

Frequency Range for EMI Regulation Standards

450 kHz 30 MHz 1 GHz

10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz

EMC is a problem of spectrum control

27160

Classification of Electronic Products for EMC Test

FCC 美國標準 CISPR 國際標準 FCC接受CISPR的EMC測試認證

Class A commercialindustrial equipmentenvironment EMI limits are relatively relaxed Class B domestic or residential equipment EMI limits are relatively stringent Class B limits are roughly about 10 dB lower than Class A limits This represents a ratio of

about 13 in terms of the amplitudes of the emission levels (20log(3) 10 dB) Note that when in doubt as to where a certain piece of equipment may be used eventually we

need to design it for Class B requirements

28160

CISPR 22 Conducted Emission Standard for Class A and B

100 kHz~30 MHz Conducted EMI Range

30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]

Class A (AVG) 60 dBV [1 mV]

Class B (QP) 60 dBV [1 mV]

56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]

FCC Class B48 dB (025 mV)

29160

EMI Standards for IT and Multimedia EquipmentCISPREN 5502232 Class A and Class B Conducted Emission Limits (March 2 2017)

Any product previously tested under EN 55022 that ships into the EU after March 2 2017 must now meet the requirements of EN 55032

Equipment intended primarily for use in a residential environment must meet Class B limits with all other equipment complying with Class A

Figure 2 shows the EN 5502232 Class A and Class B limits for conducted emissions with quasi-peak and average signal detectors over the applicable frequency range of 150kHz to 30MHz Both quasi-peak and average limits must be satisfied

1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160

EMI Standards for Industrial EquipmentCISPREN 55011 Class A Conducted Emission Limits

CISPR 11 is the international product standard for EMI disturbances from industrial scientific and medical (ISM) radio-frequency (RF) equipment

CISPR 11 Class B uses the default limits as used for CISPR 2232 limits for Class A depend on the equipment group and power level

Above figure shows CISPR 11 Class A limits using quasi-peak and average signal detectors

31160

EMI Measurement System

32160

Conducted Emissions Measurements

1 Connect EUT (Equipment Under Test) to the test system2 Set the proper frequency range3 Load limit lines and correction factors for LISN and limiter4 View the ambient emissions with DUT OFF5 Switch on the DUT and find signals above limits by using peak detector6 Measure all signals above limits with quasi-peak and average detectors

EMI

Radiated

Conducted

33160

Purposes of LISN

LISN ldquoLine Impedance Stabilization Networkrdquo or ldquoartificial mains networkrdquoPurpose to standardize impedance of the power source used to supply the device under testPresent a constant impedance between Phase conductor and safety wire Neutral conductor and safety wire

Prevent external noise on the power system net from contaminating the measurementSpectrum of conducted emissions is measured across the standard impedance (50above 150kHz)

34160

LISN Impedance Seen From The Equipment Under Test (EUT)

50

50

35160

Frequency Range and Noise Magnitude for EMI Measurement

-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m

CISPR 22 Conducted EMI Class B (QP)

60 dBV [1 mV]

CISPR 22 Radiated EMI Class B (QP) [3m]

56 dBV [063 mV]

40 dBVm [01 mVm]

Measurement of Conducted and Radiated EmissionRadiated Emission (30-300 MHz)Radiated Emission (015-30 MHz)Conducted Emission (015-108 MHz)

Conducted Emission (015-108 MHz)

Radiated Emission (30-300 MHz)Radiated Emission (015-30 MHz)

Conducted

Radiated

Measurement of Conducted Emission (015-108 MHz)


Radiated Emission (30-300 MHz)

Conducted Radiated

Spectrum Analyzer for Conducted EMI Measurement Quasi-Peak Peak and Average Detector

39160

Peak vs Quasi-peak vs Average

Peak ≧QP ≧Average If all signals fall below the limit then the product passes and no future testing is needed For CW (Continuous Wave) signal Peak = QP The higher repetition rate of the signal the higher QP reading Radiated emissions measurements above 1 GHz are performed using average detection

40160

Interpretation of the EMC Standards for Conducted Emissions

50

根據CISPR 22的EMC 傳導性電磁放射標準B類IT設備在500kHz到5 MHz的範圍其量測之電磁干擾雜訊(電壓)必須低於56 dBV也就是063 mV

由於LISN在量測的頻率範圍呈現為一個50的等效電阻因此待測設備的電磁干擾電流必須低於126 A若考慮-6dB的安全餘域則雜訊電流必須低於63 A

降低雜訊電流就是電磁干擾防制的關鍵

500 kHz 5 MHz

063126

50noisei

mV μA

41160

2 Fundamentals of EMC Theory




The Physical Basis of EMC EurIng Keith Armstrong CEng FIET SMIEEE Cherry Clough Consultant wwwcherrycloughcom

42160

Relevant EMI ldquoComponentsrdquo

Component Selection13 comes from selected components EMI characteristics

Circuit Design 13 comes from EMI due to circuit design topology design (efficiency common-mode voltage) switching scheme (PWM or soft switching) gate driver snubber circuit design sensing circuits filter design PWM strategies and control design etc

PCB Layout Mechanical Design and System Installation13 comes from PCB layout cable design interconnection mechanical design wiring system installation etc

However we should also note that improper circuit design results severe EMI problems

43160

Assumptions in Ideal Circuits

Wires are perfect conductors

This assumption ignoreswire resistancewire inductancemutual inductance with other conductors

A BWireVA = VB

A B

44160


The space surrounding a wire is a perfect insulator (dielectric constant = 0)

This assumption ignores capacitance between conductors

A B

45160


The ground (reference) node is at zero potential

Formally this is a definition But there is an implicit assumption that all parts of the system can be connected via ideal conductors to a common ground node In practice it is often quite difficult to ensure that each stage of a system operates with the same zero potential reference

Stage 1 Stage 2 Stage 3


46160

Current Always Flows in Loop

Where is the return path

Guideline for PCB layout or interconnection design

Always try to design the connections of current loops with minimum and constant impedance

Parasitic inductance almost can be cancelled out

47160

Current Flows Around a Closed Loop

Simple-minded inductance formula

To reduce inductance reduce loop cross-sectional area (by routing of wires) orincrease trace width (or use larger wire)

m

Co

l

AL

Hm 104 7 o

lengthpath magnetic effective ml

Single-turn air-core inductor

B field loop area AcI

48160

Wire Has Inductance

P

N

a

Wire has inductance

Short and thick wire has lower inductance

Long and thin wire has higher inductance

P

N

a Critical traces traces with spiky current High IT

Always keep minimum loop area for critical traces

Current always flows in loop Therefore always keep the critical return trace as close as possible to the critical forward trace

Stray inductance

49160

Elements of EMC Environment

T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160

Common-Mode vs Differential-Mode Signals

Differential-mode voltage (VDM)(V1 V2)V1

V2

(V1 V2)2

Common-mode voltage (VCM)(V1 V2)2 VREF

Reference voltage (VREF)

為何要將訊號分解為共模訊號與差模訊號

共模訊號與差模訊號是真實的還是因分析目的而假設的

共模訊號是直流成分差模訊號是交流成分此說法正確嗎

共模訊號是無用的差模訊號是有用的此說法正確嗎

三相電路的共模訊號與差模訊號如何定義

51160


參考點 (reference point) 是什麼 SignalCommon Ground Frame Earth

訊號是什麼是電壓是電流是雜訊

是電壓 ndash 參考點為何『點』是什麼

是電流 ndash 電流迴路之路徑為何

訊號的頻率組成(頻譜)為何

從EMI的觀點電流迴路的等效電路為何

共模訊號與差模訊號根本上的差異在於其不同的電流迴路路徑

共模雜訊之所以難以處理主要關鍵在於其電流迴路路徑難以捉摸相關參數難以確定

52160

Conducted Mode Signals DM and CM Voltages and Currents

Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160

Radiated Mode Signals

Earth

Differential Mode

Earth

Common Mode

We should reduce the ldquoloop areardquo of the noise conducted paths for either differential orcommon mode noises

The PCB design should provide ldquolow impedancerdquo for the high frequency signals to reduceradiated noises

54160

Summary Differential-Mode and Common-Mode EMI

一個訊號相對於一個獨立的參考點可分解成共模(common-mode)成分與差模成分(differential-mode)

差模訊號是目的提供有用的訊號共模訊號則不是

差模訊號在傳遞或轉換過程中也會產生雜訊稱之為差模雜訊共模訊號無法提供有用之訊息與能量轉換只會造成損失與雜訊稱之為共模雜訊

一個電子裝置的電路圖(schematic)是其處理差模訊號的電路圖因此無法從既有之電路圖分析共模訊號

由於訊號電路與實體結構(例如PCB機構)的不對稱性一個電子裝置會產生相當程度的共模雜訊成為EMI防制的主要困難

電子裝置的訊號與雜訊是一種共生關係有訊號就有雜訊訊號分析是雜訊分析的基礎

將雜訊分解為差模雜訊與共模雜訊是瞭解『電磁干擾防制技術』重要的理論基礎

55160

Waveform Spectrum

56160

Time Domain and Frequency Domain

Time Domain Frequency Domain

Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform

Inverse Fourier Transform

dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160

Fourier Series Synthesis of Periodical Square Waveform

7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

Square wave reconstruction from spectral terms

11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

Convergence may be slow (~1k) - ideally need infinite termsPractically series truncated when remainder below computer tolerance

This high frequency distortion we call Gibbsrsquo Phenomenon

9

58160

Frequency Spectrum of Typical Waveforms

A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160

Spectrum of Square Time Function

f(t)

ta-a 0

a2

1

0

F()

a

1

60160

Spectrum of Triangular Time Function

1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160

Spectrum of Periodic Triangular Time Function

c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160

Spectrum of Delta Function

(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160

Spectrum Envelope of a Periodic Symmetric Trapezoidal Signal

dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160

Effect of Duty-Cycle Variations

1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160

Effect of Rise and Fall Time Variations

1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160

Effect of Repetition Frequency Variations

NOTE change the distance between discrete harmonics nf0

1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160

Frequency Spectrum of a Fixed-Power Pulse Train

(a) Waveform and (b) spectrum of the common-mode current emission of a hard and soft-switching

Hard Switching Soft Switching

68160

EMI Coupling Mechanism

69160


High Frequency (1 MHz) Characteristics of Components



Chapter 5 Nonideal Behavior of Components Introduction to Electromagnetic Compatibility 2nd Ed Clayton R Paul Wiley-Interscience 2006

70160

What are high frequency characteristics of these component

P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv

(c) Single-phase grid inverter with LC filter for microgrids

(b) Synchronous buck converter

Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode

Give an example of the EMI model

P

N

71160

Resistor Capacitor and Inductor Characteristics

(b) (c)(a)

RIV QC

V1

LI

R ndash A Representation of Loss

C ndash A Representation of Electric Field

L ndash A Representation of Magnetic Field

Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160

Resistivity of Common Used Metals

R is the resistance of the conductor in Ohms

A is the cross sectional area in m2

l is the length of the wire in meters

is the resistivity of the material in Ohm (meters)

[Ohm] A

ρlR

At room temperature C = 25degC

copper 1724 cm

Resistance and Resistivity for Selected Common Metals

10-ga wire Resistance Ohmsft

Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244

Aluminum 000164 2828

Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160

Temperature Coefficient of Copper +04degC

The Temperature Coefficient of Copper (near room temperature) is +0393percent per degree C This means if the temperature increases 1degC the resistancewill increase 0393 (asymp04)

You have 100 feet of 20 gauge wire and its resistance is 1015 ohms at 20deg C (room temp) If the temperature of the wire goes up 10degC the resistance will change by 00399 ohms (10 degrees 000393 per degree 1015 ohms = 00399 ohms)

The wire resistance will now be 1015 ohms + 00399 ohms = 10549 ohms

Example 1

You have 1 foot of ribbon cable with a resistance of 00649 ohms at 20 degrees C You plug the wire into your cable tester and keep your hands on the wire while it tests The wire temperature goes up 10degC because of your body heat The wire resistance will go up 000255 ohms (10 degrees 000393 per degree 00649 ohms = 000255 ohms)

While the wire resistance changes about 4 percent the total change is only 26 milliohms which is a very minor change

Example 2

74160

Skin Effect (集膚效應)

At high frequencies there is one thing to consider on wire resistance besides the DCresistance skin effect

Skin effect is the tendency for high-frequency currents to flow on the surface of aconductor

Skin depth is due to the circulating eddy currents (arising from a changing H field)cancelling the current flow in the center of a conductor and reinforcing it in the skin

f

2

(Skin depth)

ρ = resistivity of the conductorω = angular frequency of current = 2π times frequency

μ = absolute magnetic permeability of the conductor

75160

Resistance Skin Effect

Resistance increases with increasing frequency (f) due to the Skin Effect

Comparison of current densities for currents at DC and 1MHz

DC currents travel through the whole cross-sectional area of a conductor but AC currents are forced to flow close to the surface which is why it is called the skin effect

76160

Skin Depth vs Frequency for Some Materials

50 Hz

Mn-Zn - magnetically soft ferriteAl - metallic aluminiumCu - metallic coppersteel 410 - magnetic stainless steelFe-Si - grain-oriented electrical steelFe-Ni - high-permeability permalloy (80Ni-20Fe)

Frequency Skin depth of copper (μm)

60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66

集膚深度越深越適合作為導體與屏蔽

77160

Proximity Effect (鄰近效應)

Proximity effect is the tendency for current to flow in other undesirable patterns---loops or concentrated distributions---due to the presence of magnetic fields generated by nearby conductors

In transformers and inductors proximity-effect losses typically dominate over skin-effect losses In litz-wire windings proximity effect may be further divided into internal proximity effect (the effect of other currents within the bundle) and external proximity effect (the effect of current in other bundles)

Proximity EffectThe currents in the two conductors are flowing in opposite directions

Proximity EffectThe currents in the two conductors are flowing in same directions

反向電流的平行線其磁場會抵銷(較低的雜散電感)電流分布會互斥(較低的等效電阻與較低的損失)電路的回流線(return path)越靠近越好

同向電流的平行線其磁場會加強(產生較強的磁場)電流分布會互吸(較高的等效電阻與較高的損失)電感與變壓器的繞現方式是重要的考量

What is a Capacitor

Parallel Plate Capacitor

V

d

dielectric material

Capacitance = Ability to store charge in an electric field

QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A

k = εdε0 [k is the dielectric constant]

εd is the permittivity of the dielectric material

ε0 is the permittivity of free space

79160

Parasitics and Impedance of a ldquoRealrdquo Capacitor

L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160

Impedance Characteristics of Capacitor with High ESR

L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C

Usually Rp gtgt Rs and can be neglected

CsRL

LZ

C

sR

increasing

20 01

81160

ESR Effect on a Real Capacitor

LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160

Impedance of a Real Decoupling Capacitor

Two point-of-views of a component in thiscase a 1206 decoupling capacitor mounted toa circuit board and an equivalent circuitmodel composed of combinations of idealcircuit elements

The measured impedance as circles andthe simulated impedance as the line for anominal 1-nF decoupling capacitor Themeasurement was performed with anetwork analyzer and a GigaTest LabsProbe Station

A real physical SMT decoupling capacitor

component

Equivalent electrical circuit model of ideal

circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160

ESR and Impedance vs Frequency Characteristics

ESR(f) not a real resistor it is the model of total losses at a specific frequency

At high frequency loss is increased due to the skin effect at low frequency loss is increased due to the dielectric loss

( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160

Ideal Capacitor Compared to Actual Capacitor

【投影片】Capacitor Selection for DC-DC Converters (TI Power Forum 2012)pdf

You need a 22 uF capacitor for the output filter of a dc-dc buck converter with specifications of 5V25V 500mA fs = 1 MHz

P

N

a

Synchronous buck converter

1Q

2Q( )inV t

L

C R

How to choose the capacitor

You select a 22 uF 4V X5R 0603 Ceramic capacitor

22 FC GRM186R60G226ME15D [muRata]

You actually got this

C

sR

L

194 uF

Voltage and temperature De-rated capacitance

163 nF

(ESL) Effective Series Inductance parasitic inductance

446 m(ESR) Effective Series Resistance parasitic resistance

買一送三是否划算

85160

How to get the ESR of a selected MLCC (muRata)

86160

Impedance of Several Decoupling Capacitors

C1 (Tantale) C2 (Ceramic) C3 (Ceramic)

C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160

Parallel of Practical Capacitors

ParallelImpedance Of All

Capacitors

Low-frequencyCapacitors

High-frequencyCapacitors

Mid-frequencyCapacitors

100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160

Q What is an Inductor

The voltage across the inductor (measure with reference direction) is given by Faradays induction law as

LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(

If L does not vary with time

The integral form of the inductance is

[W eber - turns]LI

Flux Linkage of the inductor coils

89160

Inductance of Toroidal Core

i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability

Cross-sectional area Ac

Ni

2NL

Reluctance of the core0c r c

l l

A A

cB A

is the flux per turn in Weber is the flux linkage in Weber-turns Flux linkage is a property of a two-

terminal element This is the total flux see from the input of the its terminals The inductance may become nonlinear is that the relative permeability is not a

constant

90160

Parasitic Elements and Equivalent Circuit of a Real Inductor

( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC

RESR = equivalent series resistanceC = stray capacitance

Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R

where RESR is the equivalent serial resistance that represents the core and winding losses isthe frequency of interest is the undamped resonant frequency and n is resonantfrequency

91160

Real Capacitors and Inductors

Ideal impedance model is for a simple linear relationship between frequency and impedance

Not true across the whole frequency range for real components

For practical capacitors and inductors with nonlinear characteristics its frequency responses are only valid for small signal perturbation around its operating point this operating point are generally highly dependent on its dc value frequency and temperature

( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160

Ideal Diode Real Diode

(a) symbol (c) i-v characteristics(b) idealized characteristics

A K Vrated

VF(I)

I

0

Reverseblockingregion

0

Di

Dv

Di

Dv

Di

Dv

Switching Characteristics of Power Diodes

(a) Diode Turn ON waveforms (b) Diode Turn OFF waveforms

DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160

Diode Turn-Off Reverse Recovery Time

iD

0 t

IRRM

trr

Qrr

reverse-recovery time

At turn-on the diode can be considered an ideal switchHowever at turn-off the diode current reverses for a reverse-recovery time trr of a diode

In some very high frequency applications (fsw gt100KHZ) improvement in the reverse recovery performance offered by normal fast recovery diode is not sufficient

If the required reverse blocking voltage is less (lt100v) Schottky diodes are preferred over fast recovery diodes Compared to p-n junction diodes Schottky diodes have very little Turn OFF transient and almost no Turn ON transient

On state voltage drop is also less compared to a p-n junction diode for equal forward current densities However reverse breakdown voltage of these diodes are less (below 200V) Power Schottky diodes with forward current rating in excess of 100A are available

at bt

Reverse recovery softness factor or softness factor or S factor is

softness factor b

a

t

t

50 RRMI

(can also be 25 amp 10)

EMI Generation Characteristics of SiC and Si Diodes

REF X Yuan S Walder and N Oswald ldquoEMI generation characteristics of SiC and Si diodes Influence of reverse-recovery characteristicsrdquoIEEE Transactions on Power Electronics vol 30 no 3 pp 1131-1136 March 2015

(a) Diode current with various peak RRC (b) DFT results of the diode currents in (a)

The SiC diode has a very short reverse recovery time

96160

MOSFET Dynamic Characteristics

(a) Transfer characteristics (b) Equivalent circuit(a) Symbol of N-channel MOSFET

The switching performance of a device is determined by the time required to establish voltage changesacross capacitances

RG is the distributed resistance of the gate and is approximately inversely proportional to active area LS and LD are source and drain lead inductances and are around a few tens of nH Cgd Gate-to-drain capacitance is a nonlinear function of voltage and is the most important parameter

because it provides a feedback loop between the output and the input of the circuit Cgd is also called the Miller capacitance because it causes the total dynamic input capacitance to

become greater than the sum of the static capacitances

Parasitic Capacitance of Power MOSFET

Ciss = Cgs + Cgd Cds is shorted

Crss = Cgd

Coss = Cds + Cgd

A 600V HEXFET from IR

1

10

100

1000

10000

100000

1 10 100 1000

VDS Drain-to-Source Voltage (V)C

Cap

acita

nce

(p

F)

issC

ossC

rssC

0VVGS SHORTED dsgdgsiss CCCC

rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S

Typical values of input (Ciss) output (Coss) and reverse transfer (Crss) capacitances given inthe data sheets are used by circuit designers as a starting point in determining circuitcomponent values

gdC

gsC

dsC

DL

SL

Di

HF Modeling of the MOSFET in a Buck Converter

L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C

(b) Equivalent circuit of the MOSFET

Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter

(d) Characteristics of the dependent current source(c) Characteristics of junction capacitances

99160

MOSFET Measured Switching Waveforms

(a) Turn ON (b) Turn OFF

tON Turn ON Time tOFF Turn OFF Time

ONtOFFt

REF Power MOSFET Tutorial (Advanced Power Technology 2006)pdf

( )d ONt ( )d OFFt

rt

ft

100160

MOSFET Approximated Switching Waveforms



ONtOFFt


rt

ft( )d ONt ( )d OFFt

Power Switching Devices The Key for Both Efficiency and EMI Improvement

L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT

(c) Node voltage (vaN) (d) Switch current (ids)

oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T

The maximum voltage and current slew rates are key factors for EMI reduction

102160

Summary HF Characteristics of Components

Electrolytics are low-frequency capacitors All capacitors become self-resonant at some frequency which limits their high-

frequency use Mica and ceramic are good high-frequency capacitors Air core inductors generate more noise fields than do closed magnetic material core

inductors Magnetic core inductors are more susceptible to interfering magnetic fields than the

air core inductors

103160

Interference Coupling Mechanisms

104160

EMI Coupling Mechanisms

Impedance mismatches and discontinuities

Common-mode impedance mismatches rarrDifferential Signals

Capacitively Coupled (Electric Field Interference)

dVdt rarrMutual Capacitance rarrNoise Current

Example 1Vns produces 1mApF

Inductively Coupled (Magnetic Field)

didt rarrMutual Inductance rarrNoise Voltage

Example 1mAns produces 1mVnH

105160

Differential and Common-Mode EMI

LISN)(tvac

)(tiac

AC line source

ldquoEarthrdquo ground

EMIfilter

Spectrumanalyzer

Test result spectrum of the voltage across a standard impedance in the LISN

ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output

Differential-mode EMI currents

Common-mode EMI currents

106160

Coupling Mechanisms Coupling Paths

Source equipment

Victim equipment

Radiated case to main cable

External mains interference

Conducted through common earth impedance

Conducted through common mains impedance

Radiated case to case

Radiated cable to cable

input

Peripheral

107160

Coupling Mechanisms Common Impedance Coupling

LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X

XConnection has inductance L

System B input = (Vin + VN)

IL

System ALoad

System B

Vin

InputIL

108160

Electric Field Induction Capacitive Coupling

)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC

may be stray capacitance to ground

RS

Vin

equivalent circuit ndash electric coupling

INZin

109160

Capacitive Coupling

C12 = parasitic capacitance between conductors 1 and 2

Conductor 1Conductor 2

1U

12C

2GC

2NUR

110160

Capacitive Coupling Equivalent Circuit

Equivalent circuit

Voltage noise U2N induced in conductor 2

Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160

Capacitive Coupling Grounded Shield

Shield

1U

12C

2GC

2 NUR

Conductor 1 Conductor 2Shield

2 0NU SGC1U

1SC

2SC

112160

Magnetic Field Induction Inductive Coupling

System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin

equivalent circuit ndash magnetic coupling

Zin

Load

VN

VN

Mutual inductanceN LV M dI dt

M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling

Shield grounded at both ends

Shield acts as a short-circuited transformer secondary

R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160

Example of Conducted Noises in a Boost Rectifier

Switching devices can be seen as noise generators impressing noise voltages or injectingnoise currents in the circuit

Filters and parasitic elements must be taken into account in order to determine noisecurrent and voltage amplitudes

Common mode parasitic capacitances between AC hot traces and chassis

Differential modecurrent ripples and spikes

～

～

Vnoise

Inoise

116160

Example of Radiated Signals in a Boost Rectifier

Power Source

ICM

ICM

Common Mode Radiated Noise

Inoise

Differential Mode Radiated Noise

117160

Example of Differential Mode Radiation

Radiated emission

Current Is Loop of area A formed by signal and return tracks

118160

Example of Differential Mode Radiation Reduction

Current IsLoop of area A formed by signal and return tracks

DO NOT place sensitive circuit inside the critical loop

Radiated emission

119160

Reduce the Loop Area

A reduction of the loop area can significantly reduce the magnetic field intensity outside the loop

120160

Example of Common Mode Radiation

Radiated emission

ICM

IDM

common-mode current ICMground noise voltage VN

Cable

Ground plane

ground connection may be via stray capacitance

ground noise voltage VN

121160

Coupling Paths for Conducted Emissions

signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E

Isolating transformer

switching supply

Mains cable

measurement

IDM

122160

Radiated Electric Fields

Parasitic capacitances to free space

Noise coupled to core through winding-core capacitances

AC hot traces

123160

Radiated Magnetic Fields

stray transformer and choke fields

Typical input and output switching loops

Diode equivalent circuit

124160

3 EMI Reduction Techniques for Electronic Equipment

125160

Systematic EMI Reduction Techniques in Electronic Systems

接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)

分離與取向 (Separation and Orientation)

電路阻抗控制 (Circuit impedance level control)

速度與頻寬控制 (Speed and bandwidth control)

H W Ott Noise Reduction Techniques in Electronic Systems Second Edition New York John Wiley amp Sons 1988

126160

Common Impedance Coupling Path

CIRCUIT1

CIRCUIT2

GROUNDVOLTAGECIRCUIT 1

GROUNDCIRCUIT 1

GROUNDCIRCUIT 2

GROUNDVOLTAGECIRCUIT 2COMMON

GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160

Single-Point Grounding

Fig1 Series connection Fig 2 Parallel connection

The most sensitive circuit must be closest to the physical ground point (Circuit 1)

Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3

Difficult at high frequency (long connections)

Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2

Most sensitive circuit

Question When do you connect ground in Fig 1 amp Fig 2

128160

Grounding of AGND and DGND

AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160

Low Frequency Grounds Separated According to Circuit Noise Levels

Chassis ground normally carries no current This arrangement avoids ground loops Noise coupling by conduction is avoided Chassis is connected to power ground for safety It carries current only in fault condition

ChassisGround

HighNoise

Ground

Low NoiseAnalogGround

DigitalGround

Single Point Connection

130160

Conductive Noise Reduction Bulk Capacitor

POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

Adding bulk capacitor

131160

Conductive Noise Reduction Power and Ground Traces (Example of 2-layer PCB)

POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160

Conductive Noise Reduction Power and Ground Planes (Multilayer PCB)

POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3

Common ground connection

133160

Implementation of Single-Point Ground for Ground Planes with Different Characteristics

關鍵不同性質的電路在需要有共同參考點的條件下才需要『共地』(common ground)例如需要隔離的gate 電路則無須共地

所謂『單點共地』其目的在於避免『地迴路』(ground loop)其連接區域宜小不宜大

不同的『地平面』在連結『單點共地』時其目的在於提供共同參考電壓因此連結點應以信號交換電路為主要考量

PCB佈局時若不同性質電路已採用『地平面』(因為地平面已提供了最佳的低阻抗路徑)因此『連結區域』涵蓋『信號交換電路』即可若有其他已佈局之敏感電路無法納入『連結區域』可另外佈線平行的return path

134160

Conductive Noise Reduction Decoupling Capacitor

POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

Adding decoupling capacitor

135160

Low and High Frequency Decoupling

136160

Conductive Noise Reduction EMI Filter Design

EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160

EMI Filter Design for Switching Power Supply

EMIFilter

SPS

Internal signals

Lower radiated EMI noises

Product cabinet

Metal case connected to earth

CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N

Rectifier PFCProtection Input EMI Filter

Power Line Filter Design for Switched-Mode Power SuppliesMark J NaveVan Nostrand Reinhold July 1991

EMI Filter Design Richard Lee Ozenbaugh Marcel Dekker 2nd Ed Jan 2000

138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N

Protection Input EMI Filter Power Converter Before Filtering

After Filtering

REF Power Line Filter Design for Switched-Mode Power Supplies Mark J Nave Van Nostrand Reinhold July 1991

139160

Avoid a Ground Loop

If a ground connects point A to B it should not have an alternate path

AB

140160

Ground Loop ndash An Example

Definition A ground circuit allowing ground currents to flow in a loop causing two problems

1 Induced noise voltage magnetic coupling causes induced current resulting noise voltage

2 The return current may take a path further away from the signal current and create a radiating loop

In = Induced noise current

Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop

A ground loop between two circuits

VG

GROUND LOOP

VNCircuit

2Circuit

1

142160

Ground Loop Problems

Low Energy Currents in the grounds generate voltages that cause data errorsThese can be low frequency (such as 60 Hz hum on analog systems) or high frequency(electrical noise)

High Energy Transients choose data grounds instead of power grounds to clearto earth These transients can be caused internally (switching or inrush currents) or external(utility or lightning transients) These transients cause equipment damage to driversreceivers as well as to the microprocessor system itself

Common Mode Noise Ground loops are one cause of common mode noisebetween phases and grounds This noise is injected into power supplies and can causeequipment damage and disruption

3 Common mode noise on power supplies

Ground currents Ground currents

2 Transient current due to electrical faults travel on data grounds

1 Noise and hum in data lines

Types of Ground Loops

VG

VGVG

VG

VG

144160

Single-Ended and Differential Links

(a) Single-ended transmission (b) Differential transmission

The ideal differential link presents two tracks with tightly-controlled impedance same length and perfect symmetry Radiation from low to high transition on a track is canceled by the radiation from high to low transition on the other track Therefore the ideal differential link does not radiate

145160

Ground Plane

A large metallic area (typical on a PC board) which serves as

Magnetic field reduction through image currents

Electrostatic Faraday shield

Circuit common power return

AC quiet rail

Thermal Heat spreader

Printed circuit board stiffening

Typically not connected to chassis ground but may be in some cases (usually undesirable for EMI)

146160

Ground Plane

S

IreturnIsig

Distance S determinesoverall loop inductancein each case

parallel tracks

S

Ireturn

Isig tracks on oppositeside of the board

S

Ireturn

Isigground plane on oppositeside of the board allowsreturn path for any trackabove it

147160

Ground Plane as Return Current Conductor

A - Signal path

B - Shortest low-frequency return path (smaller resistance)

C - Shortest high-frequency return path (smaller inductance)

Different current components follow different return paths

Voltage drop on ground paths can be significant for high amplitude and high-frequencycurrents

Actual current path is that with lowest impedance

Ground planes are preferable in high frequency applications

AC

B Load

Uac

Ground plane

148160

Layout and Grounding

PCB layout Reduce the power-ground loop area

Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160

System Grounding Techniques

H W Ott Chap 3 Grounding Noise Reduction Techniques in Electronic Systems Second Edition New York John Wiley amp Sons 1988

Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit

lower feetmotorcircuit

Upper reelmotorcircuit

9 ldquoreadrdquo amplifiers

9 ldquowriterdquo circuits

Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP

Connection B Connection C Connection D

1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160

Waveforms of a Synchronous Buck Converter in Ideal Condition

P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

Spectrum of a symmetrical trapezoidal waveform with period of and rise time of r

L

C R

151160

EMI Analysis of DC-DC Converters

P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160

Critical Voltage Node of the Synchronous Buck Converter

P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160

Critical Voltage Node Voltage Ringing

P

N

a


aNv

What is the cause for the ringing of the node voltage va How to estimate this ringing frequency

nf 1Q

2Q

P

N

a

1Q

2Q

(a) Q1 is ON and Q2 is OFF (b) Simplified HF equivalent circuit

a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )

16 [observable 16 oscillations]

str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160

Ringing Reduction Technique

Voltage phase node ringing is influenced by several parameters Several circuit approaches may be used to reduce the severity of this transient Use Decoupling Capacitor with Damping Resistor Tuning Gate Resistance Use a Boot Resistor for the High-Side Gate Driver Power Supply Use a Snubber Circuit PCB Layout Optimization

P

N

a


1Q

2Q

aNv

inVinV

155160

PCB Layout Concept for EMC Compliance Design









156160

PCB Design Techniques for EMC Compliance

Differential mode emissions

Common mode emissions

Common mode currents

Differential mode currents

Interplanecapacitance

EMC Standards

EMI Sources

Common-Mode Emissions

Differential-Mode Emissions

EMI Reduction Techniques

Partitioning

Grounding

Shielding

Filtering

Printed Circuit Board Design Techniques for EMC Compliance A Handbook for Designers Mark I Montrose IEEE Press June 2000

157160

Example Buck Converter

Primary loop current i1(t) contains large high frequency harmonics hence inductance of input loop is critical inductance causes ringing voltage spikes

switching loss generation of B- and E- fields radiated EMI

Secondary loop contains a filter inductor and hence its current i2(t) is nearly dc hence additional inductance is not a significant problem in the second loop

i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N

The i1(t) loop is the ldquocritical current looprdquo due to the spiky switching current (IT)

The node a is the ldquocritical voltage noderdquo due to the high switching voltage (VT)

158160

Decoupling Capacitor

Parasitic inductances of input loop explicitly shown

Addition of decoupling capacitor confines the pulsating current to a smaller loop

high frequency currents are shunted through capacitor instead of input source

i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160

Reduce the Loop Area Especially the Critical Loop

Minimize area of the high frequency loop thereby minimizing its inductance Q1

D1

B fields nearly cancel

loop area Aci1

i1

160160

Summary PCB Design for EMC Compliance

Where is the fastest current changing loop

dt

diLv

t

iLv

i

t

Where is the fastest voltage changing node

dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T

For voltage change reduce the stray capacitance For current change reduce the stray inductance

3160





4160

Living with EMC


What a nice day


What wrong


[電磁免疫]


5160





[電磁免疫]


6160








7160


Theory Practice

Components System

Analog Digital

Signal Power



8160









9160










10160


2

2max

1( )

4

o

dco LB

V D

V D I I

o

dc

VD

VCCM

DCM

low-pass filter

L

C ov RLv

Li oi

CidcV

Si

Di

L

TVI sdc

LB 8max

11160







12160


PCB Layout Guide

PCB Top Copper

PCB Bottom Copper

Internal Layer 1

Internal Layer 2


13160


14160





15160


SIGNALSOURCE

EMISOURCE


VICTIM

SIGNALRECEIVER

雜訊源

接收器信號源





EMISOURCE

VICTIM

Conductive

Inductive

Capacitive

Radiative



EMS limit

EME limit

EME level

EMC margin

dB

source

receiver

frequency




17160

EMI Sources


HF Digital Circuits

Lighting




Conductor Motion

Voltage Spikes

Current Spikes

div L

dt

dvi C

dt

18160








Conducted

Radiated Near Field

Far Field


Field Dynamics

19160


A

1 2 3 4 5 6 7

10

0f

A

A

1 2 3 4 5 6 7

10

0f

A








Ideal Condition


20160



21160


22160









23160


vaila

ble

tech

niq

ues

an

d re

lativ

e co

st

to s

olve

noi

se p

robl

em

DESIGNPHASE

TESTINGPHASE

PRODUCTIONPHASE


THCHNIQUES COST




24160


IMMUNITY

ESD

RADIATED RF

EFTBURST

SURGE

CONDUCTED RF

OTHERS

EMISSIONS

RADIATED

CONDUCTED

LINE HARMONICS

LINE FLUCTUATIONS


January 1 2001


25160


EMC Regulations

EMISSION TESTS



26160



10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


5160





[電磁免疫]


6160








7160


Theory Practice

Components System

Analog Digital

Signal Power



8160









9160










10160


2

2max

1( )

4

o

dco LB

V D

V D I I

o

dc

VD

VCCM

DCM

low-pass filter

L

C ov RLv

Li oi

CidcV

Si

Di

L

TVI sdc

LB 8max

11160







12160


PCB Layout Guide

PCB Top Copper

PCB Bottom Copper

Internal Layer 1

Internal Layer 2


13160


14160





15160


SIGNALSOURCE

EMISOURCE


VICTIM

SIGNALRECEIVER

雜訊源

接收器信號源





EMISOURCE

VICTIM

Conductive

Inductive

Capacitive

Radiative



EMS limit

EME limit

EME level

EMC margin

dB

source

receiver

frequency




17160

EMI Sources


HF Digital Circuits

Lighting




Conductor Motion

Voltage Spikes

Current Spikes

div L

dt

dvi C

dt

18160








Conducted

Radiated Near Field

Far Field


Field Dynamics

19160


A

1 2 3 4 5 6 7

10

0f

A

A

1 2 3 4 5 6 7

10

0f

A








Ideal Condition


20160



21160


22160









23160


vaila

ble

tech

niq

ues

an

d re

lativ

e co

st

to s

olve

noi

se p

robl

em

DESIGNPHASE

TESTINGPHASE

PRODUCTIONPHASE


THCHNIQUES COST




24160


IMMUNITY

ESD

RADIATED RF

EFTBURST

SURGE

CONDUCTED RF

OTHERS

EMISSIONS

RADIATED

CONDUCTED

LINE HARMONICS

LINE FLUCTUATIONS


January 1 2001


25160


EMC Regulations

EMISSION TESTS



26160



10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


7160


Theory Practice

Components System

Analog Digital

Signal Power



8160









9160










10160


2

2max

1( )

4

o

dco LB

V D

V D I I

o

dc

VD

VCCM

DCM

low-pass filter

L

C ov RLv

Li oi

CidcV

Si

Di

L

TVI sdc

LB 8max

11160







12160


PCB Layout Guide

PCB Top Copper

PCB Bottom Copper

Internal Layer 1

Internal Layer 2


13160


14160





15160


SIGNALSOURCE

EMISOURCE


VICTIM

SIGNALRECEIVER

雜訊源

接收器信號源





EMISOURCE

VICTIM

Conductive

Inductive

Capacitive

Radiative



EMS limit

EME limit

EME level

EMC margin

dB

source

receiver

frequency




17160

EMI Sources


HF Digital Circuits

Lighting




Conductor Motion

Voltage Spikes

Current Spikes

div L

dt

dvi C

dt

18160








Conducted

Radiated Near Field

Far Field


Field Dynamics

19160


A

1 2 3 4 5 6 7

10

0f

A

A

1 2 3 4 5 6 7

10

0f

A








Ideal Condition


20160



21160


22160









23160


vaila

ble

tech

niq

ues

an

d re

lativ

e co

st

to s

olve

noi

se p

robl

em

DESIGNPHASE

TESTINGPHASE

PRODUCTIONPHASE


THCHNIQUES COST




24160


IMMUNITY

ESD

RADIATED RF

EFTBURST

SURGE

CONDUCTED RF

OTHERS

EMISSIONS

RADIATED

CONDUCTED

LINE HARMONICS

LINE FLUCTUATIONS


January 1 2001


25160


EMC Regulations

EMISSION TESTS



26160



10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


9160










10160


2

2max

1( )

4

o

dco LB

V D

V D I I

o

dc

VD

VCCM

DCM

low-pass filter

L

C ov RLv

Li oi

CidcV

Si

Di

L

TVI sdc

LB 8max

11160







12160


PCB Layout Guide

PCB Top Copper

PCB Bottom Copper

Internal Layer 1

Internal Layer 2


13160


14160





15160


SIGNALSOURCE

EMISOURCE


VICTIM

SIGNALRECEIVER

雜訊源

接收器信號源





EMISOURCE

VICTIM

Conductive

Inductive

Capacitive

Radiative



EMS limit

EME limit

EME level

EMC margin

dB

source

receiver

frequency




17160

EMI Sources


HF Digital Circuits

Lighting




Conductor Motion

Voltage Spikes

Current Spikes

div L

dt

dvi C

dt

18160








Conducted

Radiated Near Field

Far Field


Field Dynamics

19160


A

1 2 3 4 5 6 7

10

0f

A

A

1 2 3 4 5 6 7

10

0f

A








Ideal Condition


20160



21160


22160









23160


vaila

ble

tech

niq

ues

an

d re

lativ

e co

st

to s

olve

noi

se p

robl

em

DESIGNPHASE

TESTINGPHASE

PRODUCTIONPHASE


THCHNIQUES COST




24160


IMMUNITY

ESD

RADIATED RF

EFTBURST

SURGE

CONDUCTED RF

OTHERS

EMISSIONS

RADIATED

CONDUCTED

LINE HARMONICS

LINE FLUCTUATIONS


January 1 2001


25160


EMC Regulations

EMISSION TESTS



26160



10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


11160







12160


PCB Layout Guide

PCB Top Copper

PCB Bottom Copper

Internal Layer 1

Internal Layer 2


13160


14160





15160


SIGNALSOURCE

EMISOURCE


VICTIM

SIGNALRECEIVER

雜訊源

接收器信號源





EMISOURCE

VICTIM

Conductive

Inductive

Capacitive

Radiative



EMS limit

EME limit

EME level

EMC margin

dB

source

receiver

frequency




17160

EMI Sources


HF Digital Circuits

Lighting




Conductor Motion

Voltage Spikes

Current Spikes

div L

dt

dvi C

dt

18160








Conducted

Radiated Near Field

Far Field


Field Dynamics

19160


A

1 2 3 4 5 6 7

10

0f

A

A

1 2 3 4 5 6 7

10

0f

A








Ideal Condition


20160



21160


22160









23160


vaila

ble

tech

niq

ues

an

d re

lativ

e co

st

to s

olve

noi

se p

robl

em

DESIGNPHASE

TESTINGPHASE

PRODUCTIONPHASE


THCHNIQUES COST




24160


IMMUNITY

ESD

RADIATED RF

EFTBURST

SURGE

CONDUCTED RF

OTHERS

EMISSIONS

RADIATED

CONDUCTED

LINE HARMONICS

LINE FLUCTUATIONS


January 1 2001


25160


EMC Regulations

EMISSION TESTS



26160



10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


13160


14160





15160


SIGNALSOURCE

EMISOURCE


VICTIM

SIGNALRECEIVER

雜訊源

接收器信號源





EMISOURCE

VICTIM

Conductive

Inductive

Capacitive

Radiative



EMS limit

EME limit

EME level

EMC margin

dB

source

receiver

frequency




17160

EMI Sources


HF Digital Circuits

Lighting




Conductor Motion

Voltage Spikes

Current Spikes

div L

dt

dvi C

dt

18160








Conducted

Radiated Near Field

Far Field


Field Dynamics

19160


A

1 2 3 4 5 6 7

10

0f

A

A

1 2 3 4 5 6 7

10

0f

A








Ideal Condition


20160



21160


22160









23160


vaila

ble

tech

niq

ues

an

d re

lativ

e co

st

to s

olve

noi

se p

robl

em

DESIGNPHASE

TESTINGPHASE

PRODUCTIONPHASE


THCHNIQUES COST




24160


IMMUNITY

ESD

RADIATED RF

EFTBURST

SURGE

CONDUCTED RF

OTHERS

EMISSIONS

RADIATED

CONDUCTED

LINE HARMONICS

LINE FLUCTUATIONS


January 1 2001


25160


EMC Regulations

EMISSION TESTS



26160



10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


15160


SIGNALSOURCE

EMISOURCE


VICTIM

SIGNALRECEIVER

雜訊源

接收器信號源





EMISOURCE

VICTIM

Conductive

Inductive

Capacitive

Radiative



EMS limit

EME limit

EME level

EMC margin

dB

source

receiver

frequency




17160

EMI Sources


HF Digital Circuits

Lighting




Conductor Motion

Voltage Spikes

Current Spikes

div L

dt

dvi C

dt

18160








Conducted

Radiated Near Field

Far Field


Field Dynamics

19160


A

1 2 3 4 5 6 7

10

0f

A

A

1 2 3 4 5 6 7

10

0f

A








Ideal Condition


20160



21160


22160









23160


vaila

ble

tech

niq

ues

an

d re

lativ

e co

st

to s

olve

noi

se p

robl

em

DESIGNPHASE

TESTINGPHASE

PRODUCTIONPHASE


THCHNIQUES COST




24160


IMMUNITY

ESD

RADIATED RF

EFTBURST

SURGE

CONDUCTED RF

OTHERS

EMISSIONS

RADIATED

CONDUCTED

LINE HARMONICS

LINE FLUCTUATIONS


January 1 2001


25160


EMC Regulations

EMISSION TESTS



26160



10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


17160

EMI Sources


HF Digital Circuits

Lighting




Conductor Motion

Voltage Spikes

Current Spikes

div L

dt

dvi C

dt

18160








Conducted

Radiated Near Field

Far Field


Field Dynamics

19160


A

1 2 3 4 5 6 7

10

0f

A

A

1 2 3 4 5 6 7

10

0f

A








Ideal Condition


20160



21160


22160









23160


vaila

ble

tech

niq

ues

an

d re

lativ

e co

st

to s

olve

noi

se p

robl

em

DESIGNPHASE

TESTINGPHASE

PRODUCTIONPHASE


THCHNIQUES COST




24160


IMMUNITY

ESD

RADIATED RF

EFTBURST

SURGE

CONDUCTED RF

OTHERS

EMISSIONS

RADIATED

CONDUCTED

LINE HARMONICS

LINE FLUCTUATIONS


January 1 2001


25160


EMC Regulations

EMISSION TESTS



26160



10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


19160


A

1 2 3 4 5 6 7

10

0f

A

A

1 2 3 4 5 6 7

10

0f

A








Ideal Condition


20160



21160


22160









23160


vaila

ble

tech

niq

ues

an

d re

lativ

e co

st

to s

olve

noi

se p

robl

em

DESIGNPHASE

TESTINGPHASE

PRODUCTIONPHASE


THCHNIQUES COST




24160


IMMUNITY

ESD

RADIATED RF

EFTBURST

SURGE

CONDUCTED RF

OTHERS

EMISSIONS

RADIATED

CONDUCTED

LINE HARMONICS

LINE FLUCTUATIONS


January 1 2001


25160


EMC Regulations

EMISSION TESTS



26160



10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


21160


22160









23160


vaila

ble

tech

niq

ues

an

d re

lativ

e co

st

to s

olve

noi

se p

robl

em

DESIGNPHASE

TESTINGPHASE

PRODUCTIONPHASE


THCHNIQUES COST




24160


IMMUNITY

ESD

RADIATED RF

EFTBURST

SURGE

CONDUCTED RF

OTHERS

EMISSIONS

RADIATED

CONDUCTED

LINE HARMONICS

LINE FLUCTUATIONS


January 1 2001


25160


EMC Regulations

EMISSION TESTS



26160



10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


23160


vaila

ble

tech

niq

ues

an

d re

lativ

e co

st

to s

olve

noi

se p

robl

em

DESIGNPHASE

TESTINGPHASE

PRODUCTIONPHASE


THCHNIQUES COST




24160


IMMUNITY

ESD

RADIATED RF

EFTBURST

SURGE

CONDUCTED RF

OTHERS

EMISSIONS

RADIATED

CONDUCTED

LINE HARMONICS

LINE FLUCTUATIONS


January 1 2001


25160


EMC Regulations

EMISSION TESTS



26160



10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


25160


EMC Regulations

EMISSION TESTS



26160



10Hz

100 1kHz

10 100 10 100 10 100

VDE-Conducted

FCC-Conducted

VDE-Radiated

FCC-Radiated

MIL-STD-Conducted

MIL-STD-Radiated

1MHz

1GHz


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


27160






28160



30

40

50

60

70

80

90

Frequency in MHz

dBV

79 dBV [9 mV]

01 015 05 10 16 5 10 30 MHz

Class A (QP)

500 kHz

73 dBV [45 mV]

66 dBV [2 mV]



56 dBV [063 mV]

Class B (AVG)

50 dBV [0316 mV]

46 dBV [02 mV]


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


29160





1 mV

0316 mV

500 kHz

500 kHz

45 mV

1 mV

30160





31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


31160


32160



EMI

Radiated

Conducted

33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


33160

Purposes of LISN



34160


50

50

35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


35160


-20

0

20

40

60

80

Frequency in MHz

dBV

01 015 MHz 10 10 30 MHz 100 1000 MHz

dBV

m


60 dBV [1 mV]


56 dBV [063 mV]

40 dBVm [01 mVm]




Conducted

Radiated




Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T





Conducted Radiated


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


39160



40160


50




500 kHz 5 MHz

063126

50noisei

mV μA

41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


41160






42160






43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


43160




A BWireVA = VB

A B

44160




A B

45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


45160






46160






47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


47160




m

Co

l

AL

Hm 104 7 o




48160

Wire Has Inductance

P

N

a

Wire has inductance



P

N




Stray inductance

49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


49160


T

ILV

dt

dvCi

dt

diLv

T

VCI

Noise source Victim

Coupling paths

i(t)

v(t)

VDC

Current Spike

Voltage Spike

50160



V2

(V1 V2)2








51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


51160










52160


Earth

EUTUD

I1

I2

U2

U1

+

+

Earth

EUT

UC

I1

I2

U2 U1

+

+

IC

ID

IC

1

2

C D

C D

I I I

I I I

1 2 1 2

2 2 C D

I I I II I

1

2

1

21

2

C D

C D

U U U

U U U

1 21 2

2 C D

U UU U U U

05UD

05UD

53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


53160


Earth

Differential Mode

Earth

Common Mode



54160









55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


55160

Waveform Spectrum

56160



Frequency

Time

(a) Sine wave

(b) Square wave

(c) Transient

(d) Impulse

T

Time

Time

Time

Frequency

Frequency

Frequency

Ampl

itude

Ampl

itude

Ampl

itude

Ampl

itude

f = 1T

Fourier Transform


dtetxfX ftj 2)()(

dfefXtx ftj

2)(

2

1)(

57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


57160


7

1ksin(kt)kb-(t)7sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

5

1ksin(kt)kb-(t)5sw

3

1ksin(kt)kb-(t)3sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

1

1ksin(kt)kb-(t)1sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)

9

1ksin(kt)kb-(t)9sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)


11

1ksin(kt)kb-(t)11sw

-15

-1

-05

0

05

1

15

0 2 4 6 8 10t

sq

uare

sig

nal

sw

(t)



9

58160


A

A

A

1 2 3 4 5 6 7

10

0f

A4

31

51

71

1 2 3 4 5 6 7

10

0f

A

1 2 3 4 5 6 7

10

0f

A2

8

91

251

491

27314

810608

2

59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


59160


f(t)

ta-a 0

a2

1

0

F()

a

1

60160


1

a c-a-c

pa(t)

qc(t)

2a

0

asin2

2

2 )2(sin4

c

c

t

f(t) F()

61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


61160


c0-c T t 0

f(t)

1

c

a0

a1

a2

0

c

2

)(1

0 FT

62160


(t)

t0

F()

0

1

f(t)

ta-a 0

a2

1

0

F()

1

a

Fsin2

)(

63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


63160


dBμV

2Ad

f [MHz]

2 2

2 o

r

Af

f t

1

1f

2

1

r

ft

x(t)

t

cycle-duty T

d

f2 oAf

f

r

fr assume

T

A

20 dB decade

40 dB decade

64160


1

of

d

dBμV

2Ad1

2Ad2

2

of

d

f [MHz]

2 1d d

tT

1

cycle-duty T

d

tT

2

A

65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


65160


1

o

r

f

dBμV

2Ad

2

o

r

f

f [MHz]

2 1r r

tT

1r

tT

2r

A

66160



1f

d

dBμV

2Ad

2f

d

f [MHz]

02 01f f

tT1

1

cycle-duty T

d

tT2

1

A

67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


67160




68160


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


69160






70160


P

N

a

(a) Buck converter

dsv

P

N

a

dcV1S

2S

3S

4S

a

b

oiL

CdcCov

AC Grid

gL

PCC

gv



Inductor

Output Capacitor

Input Capacitor

Wire

Power MOSFET

Power Diode


P

N

71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


71160


(b) (c)(a)

RIV QC

V1

LI




Rv

Ri RvRi

Cv

Q Cv

Ci

Lv

Li

Li

72160






[Ohm] A

ρlR


copper 1724 cm



Resistivity 10-6

ohmcm

Silver 0000944 1269

Copper 0000999 1724

Gold 000114 244


Iridium 000306 529

Brass 000406 700

Iron 000579 100

Platinum 000579 100

Steel 000684 118

Lead 00127 22

73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


73160





Example 1



Example 2

74160





f

2

(Skin depth)



75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


75160





76160


50 Hz



60 Hz 8470

10 kHz 660

100 kHz 210

1 MHz 66

10 MHz 21

100 MHz 66


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


77160








What is a Capacitor


V

d

dielectric material


QC

V [Farad]

d AC

d

[Farad]

(change in voltage)

(change in time)

dVi C

dt

A




79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


79160


L

0

1

LC

CRj

RLjRjZ

p

ps

1

)(

0

02

0

1

1

Q2

1Damping factor

Q-factor

CL

RRQ ps

C

pR

sRL

s pR R

s pR R( )Z j

1

C

80160


L

0

1

LC

sR

sR

( )Z j

1

C

C

pR

sRL

Produce a zero at 1

zsR C


CsRL

LZ

C

sR

increasing

20 01

81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


81160


LZ L

0

1

LC

20 01

sR

( )Z j

1CZ

C

CsRL CsR

Produce a zero at 1

zsR C

sR

increasing

82160





component


circuit elements

R CL

Equivalent Circuit

Parasitic values

C = 067 nFR = 05 WL = 178 nH

83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


83160




( )ESR f

1CZ

C

LZ L

Dielectric loss

Electrode loss

0

1

LC

84160




P

N

a


1Q

2Q( )inV t

L

C R





C

sR

L

194 uF


163 nF




85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


85160


86160



C 1F 100nF 10nF

R 008 01 015

L (nH) 15 15 15

Fr (MHz) 2 71 29

100

10

1

01

001

1000

10000

4101 5101 6101 7101 8101

fZ

1F Tantale

100nF Ceramic

10nF Ceramic

R CL

Equivalent Circuit

1( ) sZ j R j L

j C

Q2

1Damping factor

sRQ

LC

1

2of

LC

87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


87160



Capacitors




100

10

1

01

001

10-3

10-4

104 105 106 107 108103

f(i)

C2

C1

C3

C4

C4 = C1 C2 C3

imp C1

imp C2

imp C3

imp C4

88160



LL

div L

dt

Lv

Li

Li

( ) L LL L

d dLi di dLv t L i

dt dt dt dt

dt

diLtv L

L )(

t

LLL dttvL

iti0

) (1

)0()(



[W eber - turns]LI


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


89160


i (Amp)

=N Weber-turns)

Li

Mean path length l

Permeability


Ni

2NL


l l

A A

cB A



constant

90160


( )Z j

L

0

1

LC

ESRR

1

C

2( )

1ESR

ESR

R j LZ j

j R C LC


Q Factor = 0

E SR ES R

L L C

R R

ESRR L

C

20 0 2

11 1

4n Q

1

ESRR 20logQ

c

ESR

ZQ

R


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


91160





( )Z j

1

Cs pR R

sR

LC

10 0

o

02

0

1

1

L1

( )Z j

L

0

1

LC

R

1

C

92160



A K Vrated

VF(I)

I

0


0

Di

Dv

Di

Dv

Di

Dv



DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T




DiDI

t

Ddi

dt

t

Dv

FrV

frt

1t 2t0t

t

t

DI

Dv

rrQ

Ddi

dt

3t 4t 5t

rrI

rrt

rrV RV

4

5

t

tS

A KDi

Dv

Di

94160


iD

0 t

IRRM

trr

Qrr






at bt


softness factor b

a

t

t

50 RRMI






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T






96160









Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T




Crss = Cgd

Coss = Cds + Cgd


1

10

100

1000

10000

100000

1 10 100 1000


Cap

acita

nce

(p

F)

issC

ossC

rssC


rss gdC C

gddsoss CCC

MHzf 1

Body draindiode

GRG

S

D

C

D

S


gdC

gsC

dsC

DL

SL

Di


L

C ov RLv

Li oi

dci

CidcV

si

Di

1Ci

1C


Body draindiode

GR

GDC

GSC

DSCDi

SL

DL

G

S

D

C

D

S

(a) Buck converter


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


99160




ONtOFFt


( )d ONt ( )d OFFt

rt

ft

100160




ONtOFFt


rt



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T



L

C ov R

Lv Li oi

CiinV

Di

1Ci

1C

(a) Buck converter

invidci

av

dsv

a

dsi

ST

ONT OFFT

SdT (1 ) Sd TGSv

dsi

Di

oI

aNv

(b) Ideal waveforms

LIi fallT

dsii riseT


oI

oIv fallT

aNvv riseTinV

max

V

T

max

I

T


102160





air core inductors

103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


103160


104160










105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


105160


LISN)(tvac

)(tiac

AC line source


EMIfilter

Spectrumanalyzer


ACDC rectifier

)(tig

)(tvg

+

ndash

)(2 ti

)(tvCC

+

ndash

DCDCconverter

)(tv

+

ndash

)(ti

load

loadload PVItP )(

RegulatedDC output



106160


Source equipment

Victim equipment







input

Peripheral

107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


107160


LL

N IRdt

dILV

Problem

Solution

System ALoad

System B

Vin

Input

VN

X



IL

System ALoad

System B

Vin

InputIL

108160


)( SinL

CN RZdt

dVCV

System A

Load Vin

System B

VL

VNRS

Zin

CC


RS

Vin


INZin

109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


109160

Capacitive Coupling



1U

12C

2GC

2NUR

110160


Equivalent circuit


Frequency response

2 12

1 12 2

12 2

1( )

N

G

G

U Cj

U C CjR C C

12

12 2G

C

C C

12 2

1

( )cGR C C

2

1

NU

U

1U

12C

2GC 2 NUR

111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


111160


Shield

1U

12C

2GC

2 NUR


2 0NU SGC1U

1SC

2SC

112160


System A

Input

Vin

System B

IL

RS

Zin

Mutual inductance M

RS

Vin


Zin

Load

VN

VN


M

113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


113160

Inductive Coupling

Equivalent circuit


Frequency response

2

21

NU j MRR Ri Lj

L

MRL

2R R

L

2

1

NU

i

R2R

1i1iM

R

2R

L

2 NU

2 NU

M

L

114160

Inductive Coupling



R2

U2Ni1 R

+

R2

+R

i1

ShieldU2N

115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


115160






～

～

Vnoise

Inoise

116160


Power Source

ICM

ICM


Inoise


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


117160


Radiated emission


118160




Radiated emission

119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


119160



120160


Radiated emission

ICM

IDM


Cable

Ground plane



121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


121160


signal cable

measurement

ICMslg

VNoct

circuit

CS

OV

ICME

VNsupply

CS

CC L

N

E


switching supply

Mains cable

measurement

IDM

122160




AC hot traces

123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


123160





124160


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


125160


接地 (Grounding)

濾波 (Filtering)

平衡 (Balancing)

緩振 (Snubbering)

纜線 (Cabling)

屏障 (Shielding)





126160


CIRCUIT1

CIRCUIT2


GROUNDCIRCUIT 1

GROUNDCIRCUIT 2


GROUNDIMPEDANCE

Us1=(Zs1 + ZL1 + ZC ) I1 + ZC I2

Noise voltage

ZL1

ZL2

Us1

Us2

Zs1

Zs2

I1

I2

ZC

+

+

+

127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


127160




Circuit 1

Circuit 2

Circuit 3

Z1 Z2 Z3

I3I1 I2

I2+I3I=I1+I2+I3


Circuit 1

Circuit 2

Circuit 3

Z1

Z2

Z3

0V

I3

I1

I2



128160


AVDVINV

AI

DI

A DI I DIGNDREF

AVDVINV

AI

DI

GNDREF

DI

AI

DigitalCircuit

DigitalCircuit

AnalogCircuit

AnalogCircuit

129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


129160



ChassisGround

HighNoise

Ground


DigitalGround


130160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


131160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

132160


POWER

GND 1

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

GND 2

GND 3


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


133160






134160


POWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


135160


136160


EMI FILTERPOWER

GROUND

+

+

+

+

Analog Circuit

Digital Circuit

Power Circuit

EMI Filter Design

137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


137160


EMIFilter

SPS

Internal signals


Product cabinet


CxCy

Cy

Cx

TyTx

F1

F2

RV1

BusReturn

PFCcontrol

BusL

G

N




138160


EMIFilter

SPS

Internal signals


Product cabinet


Cx

Cy

Cy

Cx

Ty

Tx

F1

F2

RV1

BusReturn

BusL

G

N


After Filtering


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


139160

Avoid a Ground Loop


AB

140160






Vn =Noise voltage

Vn= In x Rs

In

Rs

Vs Vin

141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


141160

Ground Loop


VG

GROUND LOOP

VNCircuit

2Circuit

1

142160










VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T



VG

VGVG

VG

VG

144160




145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


145160

Ground Plane





AC quiet rail




146160

Ground Plane

S

IreturnIsig


parallel tracks

S

Ireturn


S

Ireturn


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


147160


A - Signal path







AC

B Load

Uac

Ground plane

148160



Vcc GND

(a) poor (b) better

Vcc GND

(c) best

Vcc GND

149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


149160



Digitalinterface

logic

Digitalcontrollogic

Capstanmotorcircuit





Powersupplies

Relays ampsolenoids

Hardware ground

Noisy ground

Signal ground

AB D

C

1

2Vs

VG2

VG1

C1

C2

C3

AMP


1

2

C1

C3

C2

VG1VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

1

2

C1

C3

C2

VG1

VG2

Shi

eld

12

21

112 GG VV

CCC

V

1

21

112 GV

CCC

V

012 V

VsShielded twisted

pairB

Vs Coaxial cable C

Vs Coaxial cable D

VsShielded twisted

pairE

Coaxial cable FVs

150160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv


L

C R

151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


151160


P

N

a

HF model of MOSFET

1Q

2Q

Gate Driver

Gate Driver

Dv

Di

Fv

HF model of Diode

152160


P

N

a


1Q

2Q( )inV t

ST

ONT OFFT

SdT (1 ) Sd T

dead time

1GSv

2GSv

1Qi

2Qi

Di

oi

oi

oi

aNv

153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


153160


P

N

a


aNv


nf 1Q

2Q

P

N

a

1Q

2Q


a

1Q

2Q

ossC

strL

inV

(ON )DSR

1

2o

str oss

fL C

(ON )


str

oss

DS

LC

QR

1 1003

2 32Q

20 1nf f

0nf f

154160



P

N

a


1Q

2Q

aNv

inVinV

155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


155160










156160







EMC Standards

EMI Sources




Partitioning

Grounding

Shielding

Filtering


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


157160





i2(t)i1(t)

Q1

D1

i1(t)

i2(t))

Q1 D1

0

ILOAD

ILOAD

a

N



158160





i1(t)

Q1

D1

ig(t)

Q1

i1(t) D1

159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


159160



D1


loop area Aci1

i1

160160



dt

diLv

t

iLv

i

t


dt

dvCi

t

vCi

v

2

2

1LIW

2222

4

1

4

1

22

1

2

1IZILLITLIP L

I

T


Documents

電磁干擾防制【基礎課程】pemclab.cn.nctu.edu.tw/W3news/實驗室課程網頁...140-ns Minimum Off-Time for Low Dropout 0.8-V Reference With ±1% Feedback Accuracy 7.5-V