© 2011 ANSYS, Inc. June 23, 2014 1

EMI/EMC Analysis for Electrical Machines and Drives

电机及驱动系统EMI/EMC分析

Vincent Delafosse

Senior EM Product Manager

高级产品经理

© 2011 ANSYS, Inc. June 23, 2014 2

ANSYS offers a complete solution for EMC/EMI issues regarding Electrical Machines and Drives.

ANSYS能提供完整的基于机电系统EMC/EMI分析解决方案

EMC-EMI problems require a set of various techniques:

EMC-EMI问题专业且复杂，需求多重技术支撑：

Introduction前言

- Accurate semi conductor switching models

- Parasitics extractions for packages and cables

- Good models for Motors, other electromechanical components

- Ability to handle frequency dependent parasitics in time domain

- Far field studies

- 半导体功率器件开关模型精确建模

- 功率器件封装和电缆寄生参数抽取

- 电机和相关机电部件的真实模型

- 时域下频率相关寄生参数分析和处理

- 电磁辐射远场研究

© 2011 ANSYS, Inc. June 23, 2014 3

EMC-EMI Flow分析流程

IGBT Module Pack 3D

accurate model

Parameters

Extraction

Electromagnetic

(EM) study

Design and Couplings

Model IGBT Model

• Tridimensional IGBT pack model and EM study

• Parasitic model extraction

• IGBT circuit model

Far Field Study

• Far Field Study for Electric Field EM

© 2011 ANSYS, Inc. June 23, 2014 4

Step by step procedure 仿真分析规程

© 2011 ANSYS, Inc. June 23, 2014 5

Step1: Package validation

步骤一: 电力电子器件封装验证

© 2011 ANSYS, Inc. June 23, 2014 6

Tool used使用工具: Maxwell 3D

Step 1: Validation of the IGBT Pack 步骤一: IGBT电力电子器件封装验证

Goal is to check that目的：

- current levels are as expected

- There is no unbalanced parallel current paths

- Preparation for fatigue analysis

- 电流密度是否如期望所分布

- 并联支路电流是否平衡

- 为疲劳分析做准备工作

© 2011 ANSYS, Inc. June 23, 2014 7

Step1: current path validation 步骤一: 电流路径验证

© 2011 ANSYS, Inc. June 23, 2014 8

We combine:

联合仿真:

-Maxwell Magnetostatic

-ANSYS Static Stress

-N-Code Fatigue

Step 1: Fatigue Analysis 步骤一: 疲劳分析

© 2011 ANSYS, Inc. June 23, 2014 9

Step2: Electric Drive with semicondutor characterization

步骤二:

特征化参数建模半导体器件电气驱动仿真

© 2011 ANSYS, Inc. June 23, 2014 10

-- Copyright

ENTITY R IS

PORT (QUANTITY R : RESISTANCE := 1.0;

TERMINAL p,m : ELECTRICAL);

END ENTITY R;

ARCHITECTURE behav OF R IS

QUANTITY v ACROSS i THROUGH p TO m;

BEGIN

v == i*R;

END ARCHITECTURE behav;

Simplorer: Switching Nonlinear Multidomain Systems

+

-

B 11A 11 C11

A 12 A 2

B 12 B 2

C12 C2

ROT2ROT1

ASMS

3~M

J

STF

M(t)

GN

D

m

STF

F(t)

GN

D

? = M SV RS

G(s)P -Glied

I-Glied

D-Glied

G(z)

Filter

S & H

UnitDelay

NL

EQUBL

n

In pu ts

m

V alu es

x1 x2 y1

SINUS

n

Electrics Magnetics

JA

MMF

Mechanics

L

H Q

Hydraulics, Thermal, ...

Simplorer Simulation Data Bus / Simulator Coupling Technology

Block Diagrams

Differential Equations

(nth-order)

ucref-utri<=0

lcn

SET: itrcn:=0

SET: itrcp:=0

DEL := lcn##td

SET: itrcn:=0

SET: itrcp:=1

ucref-utri>=0

SET: itrcp:=0

SET: itrcn:=1

SET: itrcp:=0

SET: itrcn:=0

DEL := lcp##td

ucref-utri<=0

ucref-utri>=0

lcp

State Graphs Co-Analysis, Co-Simulation,

Parameter Extraction: Maxwell, PEXprts, Q3D

RMxprt, HFSS, SIwave

Matlab/Simulink

ModelSim/NCsim

Others

VHDL / VHDL-AMS C/C++ Spice

© 2011 ANSYS, Inc. June 23, 2014 11

Step2: Ideal Drive 步骤二：由理想电子电子器件驱动的仿真

Controller

Machine withideal load

0

0

0

0

0

0

A

Amp_5

A

Amp_3

A

Amp_1

A

Amp_6

A

Amp_4

A

Amp_2

A

AM_phC

A

AM_phB

A

AM4

A

AM_phA

+

V

V_phA

+

V

V_phB

+

V

V_phC

GAIN

GAIN1

GAIN

GAIN2

GAIN

GAIN3

GAIN

GAIN4

GAIN

GAIN5

GAIN

GAIN6

+

V

VDC

PhaseBPhaseA PhaseC

A

B

C

N

ROT1

ROT2w

+

V_ROT1

IGBT1

IGBT2

IGBT3

IGBT4

IGBT5

IGBT6

D1

D2 D3

D4 D5

D6

Inverter withideal IGBTs

© 2011 ANSYS, Inc. June 23, 2014 12

IGBT device: Device Parameter Extraction IGBT 器件: 器件参数抽取

Infineon : eupec FZ600R12KE3

Simplorer Device Characterization Tool automatic parameter fitting from data sheet

0.00 1.00 2.00 3.00 4.00 5.00Vce.V [V]

0.00

200.00

400.00

600.00

800.00

1000.00

1200.00

Ic.I [A

]

x02_OutputOutput Char. @Tj=125c

Curve Info

Ic.ITR

Output Vce-Ic

Vg=17 15 11

9

Product Data sheet

Simplorer

Characterization Tool

Device Model

也可是Mosfet、功率二极管等

© 2011 ANSYS, Inc. June 23, 2014 13

Infineon : eupec FZ600R12KE3

Equivalent Thermal Circuit Model （IGBT&Diode）

IGBT Diode

25℃

特性抽出ツール

0 650.0 125.0 250.0 375.0 500.0 0

70.00

10.00

20.00

30.00

40.00

50.00

60.00

E=f(Ic)

Eon

Eoff

I [A]

E

[mJ]

1k * igbt_... 1k * igbt_...

Eon = f... Eoff = f...

20.0 140.0 40.0 60.0 80.0 100.0 120.0 15.00

40.00

17.50

20.00

22.50

25.00

27.50

30.00

32.50

35.00

37.50

E=f(Tc)

Eon

Eoff

E

[mJ]

Tc [C]

Simplorer

IGBT device : Thermal Impedance Extraction IGBT 器件: 器件热阻参数抽取 Simplorer Device Characterization Tool

automatic parameter fitting from data sheet

Product Data sheet

Characterization Tool

© 2011 ANSYS, Inc. June 23, 2014 14

Drive with dynamic IGBTs and RMxprt model included

由动态IGBT驱动RMxprt电机模型的仿真

© 2011 ANSYS, Inc. June 23, 2014 15

Step3: Parasitics extraction

步骤三：封装寄生参数抽取

© 2011 ANSYS, Inc. June 23, 2014 16

Q3D Extractor

Quasi-static extraction tool

Solves for Parasitics • 3D Arbitrary structures

• 2D uniform cross-section – Cables

– Wires

– Transmission lines

Solver technologies: • Finite Element solver • Integral Equation solver • Electrostatic solver • Separate DC and AC solvers • Resistance & Inductance Solvers • Capacitance and Conductance solvers

Applications (Parasitic Extraction) • RLCG parameter extraction of

– Connectors (Q3D) – Bus Bars (Q3D) – Package lead frames (Q3D) – Transmission lines calc. (2D) – Cable characterization (2D) – Circuit model (2D & Q3D)

© 2011 ANSYS, Inc. June 23, 2014 17

Q3D Extractor Basics

Q3D Extractor Simulation Technology Quasi-static Electromagnetics

HP

C

Q3

D E

xtra

cto

r D

eskt

op

•Capacitance/Conductance •DC Resistance/Inductance •AC Resistance/Inductance

2D Extractor

•Multiprocessing •Distributed Q3D Solvers

Q3D Extractor

•Multiprocessing •Distributed 2D Extractor Solvers

Op

tim

etri

cs

Parametric, Optimization, Sensitivity, Statistical

Boundary Element Method Finite Element Method

Distributed Solve Option

•Admittance (C/G) •Impedance (R/L)

© 2011 ANSYS, Inc. June 23, 2014 18

Q3D Applications

Q3D is used for Parasitic Extraction • RLGC models

Applications

• Touchscreen technologies – Capacitive sensing

• DDRx Memory Applications

• Flash memory

• Packages – BGAs, SiP and PoPs

• IGBTs

© 2011 ANSYS, Inc. June 23, 2014 19

Resistance and Inductance

Q3D does two inductance calculations:

DC inductance

• No skin effect—3D volume currents

• Magnetic fields do not disturb current flow; DC conduction solver can be used

AC inductance

• Well developed skin effect—2D surface currents

• Magnetic fields strongly affect current flow; must solve for AC current distribution

Resistance

DC and varying AC component

log(f)

L(f)

acL

dcL

log(f)

log R(f)

fRac

dcR

© 2011 ANSYS, Inc. June 23, 2014 20

EMI analysis by Q3D LRC extraction

Circuit Model ・DC or AC

Static

Circuit Model ・DC or AC

State Space Model ・Freq. Sweep

Dynamic

Equiv. Circuit

Project info.

R/L vs Freq.

DC Circuit Model

AC Circuit Model

State Space / IFFT Model

Q3D Simplorer

IGBT Package Step2 : LRC Extraction IGBT封装参数：LRC 参数抽取

© 2011 ANSYS, Inc. June 23, 2014 21

Drive with IGBT including Package 带IGBT器件封装寄生参数的驱动电路仿真

© 2011 ANSYS, Inc. June 23, 2014 22

IGBT Switching – Conductive EMI IGBT 开关过程-- --传导干扰 EMI

Vce

Vg

Vge

Ic

Power

© 2011 ANSYS, Inc. June 23, 2014 23

Step4: Radiated Fields

步骤四: 辐射场分析

© 2011 ANSYS, Inc. June 23, 2014 24

FFT of Power surges during switching 开关过程中电涌波形FFT分析

© 2011 ANSYS, Inc. June 23, 2014 25

Radiated Fields 辐射电场图

使用工具: HFSS

© 2011 ANSYS, Inc. June 23, 2014 26

Electrical Fields on package 器件封装上的电场分布

© 2011 ANSYS, Inc. June 23, 2014 27

ANSYS has a lot of experience in capturing EMC-EMI effects for

electric drives.

Only ANSYS offers the combination of tools that can be combined

seamlessly to capture all the physics involved.

ANSYS拥有丰富的电气驱动EMC-EMI捕获、分析经验。

也只有ANSYS能够提供全套、多物理域无缝组合分析工具。

Conclusion结论