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Complex ImpedanceComplex Impedance SpectroscopySpectroscopyComplex ImpedanceComplex Impedance SpectroscopySpectroscopy
S. S. BhogaS. S. Bhoga
Department of PhysicsDepartment of Physics
RTM Nagpur University, NagpurRTM Nagpur University, Nagpur
What is Complex ImpedanceWhat is Complex Impedance Spectroscopy ?Spectroscopy ?
Involves measurement ofInvolves measurement ofReal and imaginary parts of impedance/ Real and imaginary parts of impedance/ admittanceadmittanceOver wide frequency range Over wide frequency range (10(10-3-3 to 10 to 101414 Hz) Hz)
Convey informationConvey information
Microscopic ion dynamics Microscopic ion dynamics Ionic bulk conductivityIonic bulk conductivityElectrode polarisation Electrode polarisation Activation enthalpy for ion migrationActivation enthalpy for ion migrationMicro-heterogeneities Micro-heterogeneities Dielectric constantDielectric constantElectric polarizationElectric polarizationEtc.Etc.
What is Complex ImpedanceWhat is Complex Impedance Spectroscopy ?Spectroscopy ?
(() ) is Fourier transform of autocorrelation function is Fourier transform of autocorrelation function of current density, of current density, ii
It resolves elementary hopping processes It resolves elementary hopping processes It is a very powerful microscope in time.It is a very powerful microscope in time.
0
,)exp()().0(3
)( dttjtiiTk
V
N
tvqV
ti ii
1),(
1)( here
V - volume of the sample qi - Charge on mobile specie
vi - Velocities
- Angular frequency
Why Complex Impedance Why Complex Impedance Spectroscopy ?Spectroscopy ?
Mass transport in solids is vital for many Mass transport in solids is vital for many technological applicationstechnological applications
Mobility of ions under influencesMobility of ions under influences Chemical gradientChemical gradient -- DiffusionDiffusionElectric potentialElectric potential gradientgradient -- Conductivity Conductivity
S
/cm
)
Time (Min)
electronic
Bulk
Fig:- Variation of dc conductivity with time
No instrument is No instrument is capable to capable to determinedetermine
is time/frequency dependentis time/frequency dependent
Disadvantage of dc conductivityDisadvantage of dc conductivityPolarization of ions introduces Polarization of ions introduces errorerror
ac Conductivity ac Conductivity Avoids polarizationAvoids polarization
Single frequencySingle frequency First hand information (screening First hand information (screening test)test)
Bulk conductivity – dcBulk conductivity – dc
Only due to ion migrationOnly due to ion migration
Excludes electrode Excludes electrode polarizationpolarization
Dielectric lossDielectric loss
Grain-boundary contributionGrain-boundary contribution
Why Complex Impedance Why Complex Impedance Spectroscopy ?Spectroscopy ?
Fig:- Variation of ac conductivity with frequency
S
/cm
)
Log f (Hz)
Ele
ctro
de
pol
ariz
atio
n
Bulk
Die
lect
ric
loss
es
Ele
ctro
de
pol
ariz
atio
n
Fig:- Cole-Cole plot (impedance)
Z”
Oh
m)
Z’ (Ohm)RBulk
Die
lect
ric
loss
es
Fig:- Cole-Cole plot (Admittance)
Y”
S)
Y’ (S)GBulk
Ele
ctro
de
pol
ariz
atio
n
Fig:- Variation of ac conductivity with frequency
S
/cm
)
Log f (Hz)
Ele
ctro
de
pol
ariz
atio
n
Bulk
Die
lect
ric
loss
es
Fig:- Variation of ac conductivity with frequency
S
/cm
)
Log f (Hz)
Ele
ctro
de
pol
ariz
atio
n
Bulk
Die
lect
ric
loss
es
Fig:- Variation of ac conductivity with frequency
S
/cm
)
Log f (Hz)
Ele
ctro
de
pol
ariz
atio
n
Bulk
Die
lect
ric
loss
es
S
/cm
)
Log f (Hz)
S
/cm
)
Log f (Hz)
Ele
ctro
de
pol
ariz
atio
n
Bulk
Die
lect
ric
loss
es
Ele
ctro
de
pol
ariz
atio
n
Fig:- Cole-Cole plot (impedance)
Z”
Oh
m)
Z’ (Ohm)RBulk
Die
lect
ric
loss
es
Fig:- Cole-Cole plot (Admittance)
Y”
S)
Y’ (S)GBulk
Ele
ctro
de
pol
ariz
atio
n
Ele
ctro
de
pol
ariz
atio
n
Fig:- Cole-Cole plot (impedance)
Z”
Oh
m)
Z’ (Ohm)RBulk
Die
lect
ric
loss
es
Ele
ctro
de
pol
ariz
atio
n
Fig:- Cole-Cole plot (impedance)
Z”
Oh
m)
Z’ (Ohm)RBulk
Die
lect
ric
loss
es
Ele
ctro
de
pol
ariz
atio
n
Fig:- Cole-Cole plot (impedance)
Z”
Oh
m)
Z’ (Ohm)RBulk
Die
lect
ric
loss
es
Fig:- Cole-Cole plot (impedance)
Z”
Oh
m)
Z’ (Ohm)RBulk
Die
lect
ric
loss
es
Fig:- Cole-Cole plot (impedance)
Z”
Oh
m)
Z’ (Ohm)RBulk
Die
lect
ric
loss
es
Z”
Oh
m)
Z’ (Ohm)RBulk
Die
lect
ric
loss
es
Z”
Oh
m)
Z’ (Ohm)
Z”
Oh
m)
Z’ (Ohm)RBulk
Die
lect
ric
loss
es
Fig:- Cole-Cole plot (Admittance)
Y”
S)
Y’ (S)GBulk
Ele
ctro
de
pol
ariz
atio
n
Fig:- Cole-Cole plot (Admittance)
Y”
S)
Y’ (S)GBulk
Ele
ctro
de
pol
ariz
atio
n
Fig:- Cole-Cole plot (Admittance)
Y”
S)
Y’ (S)GBulk
Ele
ctro
de
pol
ariz
atio
n
Fig:- Cole-Cole plot (Admittance)
Y”
S)
Y’ (S)GBulk
Ele
ctro
de
pol
ariz
atio
n
Y”
S)
Y’ (S)GBulk
Y”
S)
Y’ (S)
Y”
S)
Y’ (S)GBulk
Ele
ctro
de
pol
ariz
atio
n
Ele
ctro
de
pol
ariz
atio
n
Why Complex Impedance Why Complex Impedance Spectroscopy ?Spectroscopy ?
Provides straight-forward determination of Provides straight-forward determination of electrolyte resistance irrespective of degree of electrolyte resistance irrespective of degree of electrode polarisation.electrode polarisation.
Does not necessarily require use of reversible Does not necessarily require use of reversible electrodes or complicated cell geometryelectrodes or complicated cell geometry
Determine dielectric properties of materialDetermine dielectric properties of material
Ease of studying electrode polarisationEase of studying electrode polarisation
Mathematical Formulation Mathematical Formulation andand
Electrical Equivalent ModelsElectrical Equivalent Models
Mathematical model and Analyses
Mathematical model and Analyses
Plausible Physical modelPlausible Physical model Equivalent circuitEquivalent circuit
System characterizationSystem characterization
ExperimentExperiment TheoryTheory
CIS – CIS – Basics/Electrical EquivalenceBasics/Electrical Equivalence
Sine waves are useSine waves are useVV((tt) = ) = VVmm exp( exp(jjtt ) )
II((tt) = ) = IImm exp( exp(jjt t ))
Input and output waveforms are sameInput and output waveforms are same
ZZ in time domain obeys Ohms law in time domain obeys Ohms law
Z Z (() = |) = |ZZ| exp (-| exp (-jj))
Input Output
CIS – CIS – Basics/Electrical EquivalenceBasics/Electrical Equivalence
Real and Imaginary parts Real and Imaginary parts
Z’
Z”
0 (R/2, R/2)
(0,0) (R,0)
Complex impedance Complex impedance responseresponse
Electrical EquivalentElectrical Equivalent
,)(1
r
Z222 RC
R
BG
G
2
2
22 )(1 RC
CR
BG
BiZ
Eliminate Eliminate and rearrange and rearrange
((ZZrr -R -R/2)/2)22 + + ZZii22 = ( = (RR/2)/2)22 . .
Eq. of circle with radius Eq. of circle with radius RR/2/2
CIS – CIS – Basics/Electrical EquivalenceBasics/Electrical Equivalence
Real and Imaginary parts Real and Imaginary parts
Eliminate Eliminate nn andand rearrangerearrange
((ZZrr - -RR/2 )/2 )22 + ( + ( ZZii -{[ -{[RR tan ( tan (/2)]/2)]1/21/2 }) })22 = = r r 22
where, where, r r 22 = ( = (RR/2)/2)22 + {( + {(RR/2)/2)22 + tan( + tan(/ / 2)}2)}22
))()2/sin()(21
)}2/sin()(1{1(2
01
0
1
RZ r
))()2/sin()(21
)}2/cos(){(1(2
01
0
10
RZ i
Z’
Z”
0 (R/2, [R cos(ap/2)]/[2(1+sin(ap/2]
(0,0)
Complex impedance Complex impedance responseresponse
Electrical EquivalentElectrical Equivalent
CPECPE
Depressed by angle Depressed by angle
Centre Centre ((RR/2,[/2,[RR tan{ tan{/2}]/2)/2}]/2)
Top - (Top - (RR/2, [/2, [R R cos(cos(/2)]/[2(1+ /2)]/[2(1+ sin sin . . ( (/2])/2])
Radius Radius rr
CIS – CIS – Basics/Electrical EquivalenceBasics/Electrical Equivalence
Each physical Each physical processes give processes give separate semicircle separate semicircle provided their values of provided their values of are widely different are widely different
As first approximation, As first approximation, each semicircles may each semicircles may be considered as be considered as response of R-C response of R-C combination.combination.
R1R1 + R2
Solid ion conductorSolid ion conductor
Metal electrodesMetal electrodes
Z’Z’
ZZ””
Zw
R2
C2
R1
C1 Cdl
R3
BulkBulk Grain-boundariesGrain-boundaries Metal electrodeMetal electrode
Obtaining equivalent circuit to Obtaining equivalent circuit to simulate phenomenon of simulate phenomenon of electrodeelectrode
Highly convoluted Highly convoluted combination of line and combination of line and semicirclesemicircle
Electrical Equivalence - Electrical Equivalence - ComplicationsComplications
(b)
Z”
Z’
R1C1=1 Z”=(jC2)-1
Z”
Z’
(a)R1
(d)
Z”
Z’
(c)
Z”
Z’
(a’)
C1
R1
C2
Impedance data Impedance data during cooling cycleduring cooling cycle
Cooling 2Cooling 2ooC per minC per min
Dwell time 30 minDwell time 30 min
Measurement at end Measurement at end of dwell timeof dwell time
Experimental - Experimental - MeasurementMeasurement
T6
T5
T4
T3
T2
T1
40 100 160 220 280
Tem
pera
ture
Time
ts Start time te End time
Dwell time, 30 min.
ts2 te2
ts5 te5
ts3 te3
ts1 te1
ts4 te4
Experimental – Experimental – Set upSet up
Sample 1Sample 2Sample 3Sample 4Sample 5Sample 6
Mass flow meters
Ar gas cylinder O2 gas cylinder CO2/SO2 gas
Key padDisplay
Low High
parameters
HP4192A
HP 16048 test leads
IBM compatible PC(Pentium processor
G P I B
Keithley 7001
R.F. Switch
TemperatureProgrammerFurnace
Six samplesSix samples5 to 13mm5 to 13mm diadia
Frequency Frequency 5 to 13x105 to 13x1066 Hz Hz
Gas partial pressureGas partial pressure100ppm to 10%100ppm to 10%
Temperature - Temperature - R.T. to 700R.T. to 700ooCC
Experimental – Experimental – Set upSet up
G P I B
Solartron 1287Mass flow meters
Ar gas cylinder O2 gas cylinder CO2/SO2 gas Solartron 1255B FRA
IBM compatible PC(Pentium processor
Furnace
Sample Holder
Temperature programmer
FrequencyFrequency
10x1010x10-6-6 to 1x10 to 1x1066 Hz Hz
TemperatureTemperature
R.T. to 700R.T. to 700ooCC
Scribner Z-plot and Z-Scribner Z-plot and Z-view view
Data Fitting/Data Fitting/Circuit SimulationCircuit Simulation
0
10
20
0 20 30 40 50 60
”(k
10
Z’ (k)
4 8 10 12
0
2
4
0 6 2
Fitted (CNLSF) data toFitted (CNLSF) data to
Sum of squares is minimized Sum of squares is minimized by unity weightingby unity weighting
j
ZZZZ
1
0 )()()(
2/122iii IRS
Data Fitting/Data Fitting/Circuit SimulationCircuit Simulation
0
10
20
0 20 30 40 50 60
”(k
10
Z’ (k)
4 8 10 12
0
2
4
0 6 2
Parallel to interface Cg
||
C || R | | R || R ||
C i
C i
C i
R i R I R i
Bulk (interior)
( a) Perpendicular to interface ( b)
Grain
( c)
C ||
R ||
CPE
CPE
CPE
R
C
R i
C i
R
C
R
C
R
C R
C
Conduction Mechanism Conduction Mechanism
0.9
1
1.1
1.2
1.3
1.4
0Ea
(eV
)
0.9
1
1.1
1.2
1.3
0 5 10 15
Vacancy %
La
Dy
Y
Intragrain
Intergrain
0.9
1
1.1
1.2
1.3
1.4
0Ea
(eV
)
0.9
1
1.1
1.2
1.3
0 5 10 15
Vacancy %
La
Dy
Y
0.9
1
1.1
1.2
1.3
1.4
0Ea
(eV
) 0.9
1
1.1
1.2
1.3
1.4
0Ea
(eV
)
0.9
1
1.1
1.2
1.3
0 5 10 15
Vacancy %
La
Dy
Y
IntragrainIntragrain
IntergrainIntergrain
0.9
1
1.1
1.2
1.3
1.4
0Ea
(eV
)
0.9
1
1.1
1.2
1.3
0 5 10 15
Vacancy %
La
Dy
Y
0.9
1
1.1
1.2
1.3
1.4
0Ea
(eV
) 0.9
1
1.1
1.2
1.3
1.4
0Ea
(eV
)
0.9
1
1.1
1.2
1.3
0 5 10 15
Vacancy %
La
Dy
Y
IntragrainIntragrain
IntergrainIntergrain
0.9
1
1.1
1.2
1.3
1.4
0Ea
(eV
) 0.9
1
1.1
1.2
1.3
1.4
0Ea
(eV
)
0.9
1
1.1
1.2
1.3
0 5 10 15
Vacancy %
La
Dy
Y
0.9
1
1.1
1.2
1.3
1.4
0Ea
(eV
) 0.9
1
1.1
1.2
1.3
1.4
0Ea
(eV
)
0.9
1
1.1
1.2
1.3
0 5 10 15
Vacancy %
La
Dy
Y
IntragrainIntragrain
IntergrainIntergrain
kT
Eff aop exp
Intragrain conduction modifies on doping
But not grain-boundary