Discretes and MultiMarket ICs DMI – BL Power 08/08/2002application-notes.digchip.com/004/4-8407.pdf · Semiconductors Johan de Jonge / page:13 Analysis of the mobile phones DMI

Discretes and MultiMarket ICsDMI – BL Power08/08/2002

Semiconductors Johan de Jonge / page:2

DMI – BL Power

Application: Mobile Phone

Handsfree

RF Receiver

Aux ADCsSmartcard

& SIMinterface

PMU ResetOn/Off

GP-IC RF-IC

Analog Audio Codec

LCD Module

LCDdriverD

ispl

ay

PA Control

PA-IC

Charger PowerSupplies

RF Transmitter

VCO Synth.

I

Q

I

Q

Periphery Timer

Digital/Anal.Audio Codec

OAK+-DSPDSPROM

DSPSRAM

CPU A7CPU

SRAM

RF Codec

BB-IC


DMI – BL Power

Power BaseBand RF-Section Power Amplifier


DMI – BL Power

Power Section

•Battery Management (charging control)

•Battery Monitoring

•Power supplies (HI, HV, LP, RF, DA, Audio, Display ...)


DMI – BL Power

CHGF

Charger

Cha

rger

Con

trol

CHGV

Battery

R3

CHGS

R2 R1R4

T2

T1

Battery Management (Charging control)Topologies

Single or dual package, VDS 12~30V, >2A, rds(on)≈≈≈≈100mΩΩΩΩor low VCEsat bipolar transistor

Also Schottky-diodes ~30..40V, IF(AV)≈≈≈≈1A

Different kind

of topologies


DMI – BL Power

D1: Schottky ~10V

T1: low RDSON, P-type or low VCEsat PNP bipolar

~20V, >1A-device

BATPA

PACOIL

PAACTIVE

Poweramplifier

Battery

BYPASS

PA s

uppl

y co

nver

ter w

ith in

t. FE

Ts

PASENSE

Systemcontroller

VSSPA

D1

T1

C1

H1

Power Amplifier supplyTopologies


DMI – BL Power

BATDC

DCCOILB

DCCOILA

Load

Battery

RAW1

DC

/DC

Ste

p-up

/dow

n co

nver

ter

D1

D2

C1

H1

Power Supply with step up/down possibilities

D1/2: Schottky diodes:~10-40V, 0.5 - 2A,

SMA, SOT23, SOD323SOT323, SOT666

Topologies


DMI – BL Power

Level shifting 3V and 5V devicesTopologies

Low Rds(on) (especially for output stages)

Vds max close to rail-voltage, specific±20/30V


DMI – BL PowerLevel shifting 3V and 5V devicesTopologies


DMI – BL Power

Conventional Battery Management TopologyTopologies


DMI – BL Power

Load switchTopologies

Bipolar resistor-equippedtransistors (RETs) couldbe used alternatively


DMI – BL PowerAnalysis of the mobile phones

The MOSFETS

•Mosfets found in different stages, like Power Supply, BatteryManagement, Power Amplifier, etc.

•Mostly used: SOT23, SOT323 and SOT416 packages, about 5 devices perphone average

•Also used: SOT353, SOT143 and SOT363 with 3 devices per phoneaverage

•Very divers voltage range: 5.5V .. 144V, mostly N-types, low rds(on).


DMI – BL PowerAnalysis of the mobile phones

The Diodes

•Very small SMA-package, like subsma, “subsubsma”,….

•Approx.. 7 diodes per phone average

•Low breakdown voltage diodes, maximum 58V found, all very softcurves.

•Low-end devices contains more MP-rectifiers than High-end phones.

•Also a lot of small-signal devices found.


DMI – BL PowerSuitable devices

What is important on uTrenchMOS devices

•Cheap

•Low Vgs(th)

•Low rds(on) (very important!!)

•Vds voltages starting at 8V going up to 40V

•More integration of functionality’s

•Smaller packages, like SOT323, 416, 363.


DMI – BL PowerSuitable devices

Philips devices:

BSH103 BSH111 Si2302DS

BSH105 BSH112 Si2304DS

BSH108 BSH114 BSH121

The range of uTrenchMOS devices is rapidly expanding,

so watch for new devices!


DMI – BL Power


DMI – BL Power

Switch

Rectifying diodeSnubber network


DMI – BL PowerIntegrated switch / controller


DMI – BL Power

Snubber networkMosfet Rectifier


DMI – BL Power

Items:

•Switch

•Rectifying secondary diode

•Snubber network

•Charging control


DMI – BL Power

•Conventional switch is stand-alone Mosfet controlled by a

PWM-circuit,

•Packages: SMD, like SOT89, SOT223

•Typical Vds: 500-600V

•High-end devices use Integrated controller and Mosfet.

•Like Tinyswitch, Topswitch, Viper, Starplug,


DMI – BL Power

•Package: SMB, SMA

•Schottky: BV~7.5..122V

•Vf: @500mA: 580mV and up

•Switching speed typ. 25ns Recommended types:• 1N5817 .. 19 20 .. 40V, 1A, SOD81• PRLL5817 .. 19 20 .. 40V, 1A, SOD87• PBYR325CTD 25V, 3A, DPAK (SOT428)• PBYR240CT 40V, 2A, SOT223• PBYR340CTD 40V, 3A, DPAK (SOT428)• PBYR245CT 45V, 2A, SOT223• PBYR345CTD 45V, 3A, DPAK (SOT428)• 1PS74SB43 / …SB23 40 / 25V, 1A, SOT457• BAT720 40V, 0.5A, SOT23• BAT760 20V, 1A, SOD323 (SC-76)• 1PS70SB20 40V, 0.5A, SOT323• PMEG2010EV 20V, 1A, SOT666


DMI – BL Power

Now mostly RCD-snubber

High-end devices show double diode snubber

Package: SMA, SOD87

Zenerdiodes Vz: 100..200V

Blockingdiode: BV~600V

Huge opportunity for the Zenblock


DMI – BL Power

Philips Zenblock devices:

BZD142W-series

BZG142-series

BZD142-series


DMI – BL Power

Philips Blocking devices:

RS1J

BYD37J

BYG60J

Philips Zenerdiodes:

BZG03-C100..C200

BZD27-C100..C200

BZD23-C150..C200


DMI – BL Power

Philips Blocking devices:

RS1J

BYD37J

BYG60J


DMI – BL Power

•Most of the time inside the phone (see phone analysis)

Philips devices:

MOSFETs Low VCEsat PNP BJTBSH103 BSH111 PBSS5140D

BSH105 BSH112 PBSS5320D

BSH108 BSH114 PBSS5350Z

BSH121 Si2302DS PBSS5540Z

Si2304DS


DMI – BL Power

•Typical output conditions of chargers:

•2.3Watts (5.9V @ 400mA) Motorola

•4.5Watts (6.2V @ 700mA) Nokia Communicator

•Low end phones, use linear supply (big transformerand four cheap diodes)

•Common switching speeds 70..100kHz.

Documents

Discretes and MultiMarket ICs DMI – BL Power 08/08/2002application-notes.digchip.com/004/4-8407.pdf · Semiconductors Johan de Jonge / page:13 Analysis of the mobile phones DMI